DE69926532D1 - Photoresists, polymere und verfahren für die mikrolithographie - Google Patents

Photoresists, polymere und verfahren für die mikrolithographie

Info

Publication number
DE69926532D1
DE69926532D1 DE69926532T DE69926532T DE69926532D1 DE 69926532 D1 DE69926532 D1 DE 69926532D1 DE 69926532 T DE69926532 T DE 69926532T DE 69926532 T DE69926532 T DE 69926532T DE 69926532 D1 DE69926532 D1 DE 69926532D1
Authority
DE
Germany
Prior art keywords
microlithography
photoresists
polymers
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69926532T
Other languages
English (en)
Other versions
DE69926532T2 (de
Inventor
Edward Feiring
Jerald Feldman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of DE69926532D1 publication Critical patent/DE69926532D1/de
Application granted granted Critical
Publication of DE69926532T2 publication Critical patent/DE69926532T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE69926532T 1998-09-23 1999-09-21 Photoresists, polymere und verfahren für die mikrolithographie Expired - Lifetime DE69926532T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10150298P 1998-09-23 1998-09-23
US101502P 1998-09-23
US12004599P 1999-02-12 1999-02-12
US120045P 1999-02-12
PCT/US1999/021912 WO2000017712A1 (en) 1998-09-23 1999-09-21 Photoresists, polymers and processes for microlithography

Publications (2)

Publication Number Publication Date
DE69926532D1 true DE69926532D1 (de) 2005-09-08
DE69926532T2 DE69926532T2 (de) 2006-06-01

Family

ID=26798325

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69926532T Expired - Lifetime DE69926532T2 (de) 1998-09-23 1999-09-21 Photoresists, polymere und verfahren für die mikrolithographie

Country Status (10)

Country Link
US (2) US6593058B1 (de)
EP (1) EP1131677B1 (de)
JP (2) JP4327360B2 (de)
CN (1) CN1253759C (de)
AU (1) AU6056099A (de)
DE (1) DE69926532T2 (de)
HK (1) HK1041055A1 (de)
IL (1) IL141803A0 (de)
TW (1) TWI221944B (de)
WO (1) WO2000017712A1 (de)

Families Citing this family (157)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL141803A0 (en) * 1998-09-23 2002-03-10 Du Pont Photoresists, polymers and processes for microlithography
US6849377B2 (en) * 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6673523B2 (en) 1999-03-09 2004-01-06 Matsushita Electric Industrial Co., Ltd. Pattern formation method
DE60013270T2 (de) * 1999-05-04 2005-09-22 E.I. Du Pont De Nemours And Co., Wilmington Polyfluorierte epoxide und assozierte polymere und verfahren
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
EP1183571B1 (de) * 1999-05-04 2010-06-02 E.I. Du Pont De Nemours And Company Fluorierte photoresists und verfahren für die mikrolithographie
US6468712B1 (en) * 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
JP4923376B2 (ja) * 2000-04-04 2012-04-25 ダイキン工業株式会社 酸反応性基を有する新規なフッ素ポリマーおよびそれを用いた化学増幅型フォトレジスト組成物
JP2003532932A (ja) * 2000-05-05 2003-11-05 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー マイクロリソグラフィのフォトレジスト組成物に用いられるポリマー
US6951705B2 (en) 2000-05-05 2005-10-04 E. I. Du Pont De Nemours And Company Polymers for photoresist compositions for microlithography
WO2001085811A2 (en) * 2000-05-05 2001-11-15 E.I. Du Pont De Nemours And Company Copolymers for photoresists and processes therefor
SG100729A1 (en) * 2000-06-16 2003-12-26 Jsr Corp Radiation-sensitive resin composition
EP1302813A4 (de) * 2000-06-21 2005-02-23 Asahi Glass Co Ltd Resistzusammensetzung
US7132214B2 (en) 2000-09-08 2006-11-07 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
WO2002021213A2 (en) * 2000-09-08 2002-03-14 Shipley Company, L.L.C. Novel polymers and photoresist compositions for short wavelength imaging
WO2002021212A2 (en) * 2000-09-08 2002-03-14 Shipley Company, L.L.C. Fluorinated phenolic polymers and photoresist compositions comprising same
JP2004523774A (ja) 2000-10-13 2004-08-05 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー マイクロリソグラフィー用フォトレジスト組成物における溶解抑制剤
US6974657B2 (en) 2000-10-18 2005-12-13 E. I. Du Pont De Nemours And Company Compositions for microlithography
EP1326903A2 (de) * 2000-10-18 2003-07-16 E. I. du Pont de Nemours and Company Zusammensetzungen für die mikrolithographie
JP4034538B2 (ja) * 2000-10-31 2008-01-16 株式会社東芝 フォトレジスト用高分子化合物、単量体化合物、感光性樹脂組成物、これを用いたパターン形成方法、および電子部品の製造方法
KR100845394B1 (ko) * 2000-10-31 2008-07-09 다이셀 가가꾸 고교 가부시끼가이샤 전자 흡인성기 함유 단량체 및 그의 제조법
CN1575438A (zh) * 2000-11-09 2005-02-02 纳幕尔杜邦公司 微石印术用光刻胶组合物中的光酸产生剂
WO2002044814A2 (en) * 2000-11-29 2002-06-06 E. I. Du Pont De Nemours And Company Photoresist compositions comprising bases and surfactants for microlithography
KR20040012689A (ko) * 2000-11-29 2004-02-11 이 아이 듀폰 디 네모아 앤드 캄파니 포토레지스트 조성물을 함유하는 다층 엘레멘트 및 이들의미세석판인쇄에서의 용도
US7045268B2 (en) 2000-11-29 2006-05-16 E.I. Du Pont De Nemours And Company Polymers blends and their use in photoresist compositions for microlithography
JP2004537059A (ja) * 2000-11-29 2004-12-09 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー マイクロリソグラフィ用反射防止層
US6730452B2 (en) * 2001-01-26 2004-05-04 International Business Machines Corporation Lithographic photoresist composition and process for its use
WO2002065212A1 (fr) * 2001-02-09 2002-08-22 Asahi Glass Company, Limited Composition de reserve
JP4821068B2 (ja) * 2001-02-22 2011-11-24 大日本印刷株式会社 体積型ホログラム記録用感光性組成物及び体積型ホログラム記録用感光性媒体
US6794109B2 (en) 2001-02-23 2004-09-21 Massachusetts Institute Of Technology Low abosorbing resists for 157 nm lithography
US6787286B2 (en) 2001-03-08 2004-09-07 Shipley Company, L.L.C. Solvents and photoresist compositions for short wavelength imaging
CN100378578C (zh) * 2001-03-22 2008-04-02 希普雷公司 短波成像用溶剂和光刻胶组合物
AU2002254232A1 (en) 2001-03-22 2002-10-08 Shipley Company, L.L.C. Photoresist composition
EP1246013A3 (de) * 2001-03-30 2003-11-19 E.I. Du Pont De Nemours And Company Photoresists, Polymere und Verfahren für die Mikrolithographie
JP4236935B2 (ja) * 2001-04-27 2009-03-11 三井化学株式会社 フッ素含有環状オレフィンポリマー、その環状オレフィン系単量体、ポリマーの製造方法およびその用途
US6936398B2 (en) * 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
US6686429B2 (en) 2001-05-11 2004-02-03 Clariant Finance (Bvi) Limited Polymer suitable for photoresist compositions
US6737215B2 (en) 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
JP4137408B2 (ja) 2001-05-31 2008-08-20 富士フイルム株式会社 ポジ型レジスト組成物
US6958123B2 (en) 2001-06-15 2005-10-25 Reflectivity, Inc Method for removing a sacrificial material with a compressed fluid
KR100863984B1 (ko) 2001-07-03 2008-10-16 후지필름 가부시키가이샤 포지티브 레지스트 조성물
KR20040030799A (ko) * 2001-07-12 2004-04-09 가부시끼가이샤 한도따이 센단 테크놀로지스 미세 패턴 형성 방법
JP4155771B2 (ja) * 2001-08-27 2008-09-24 大日本印刷株式会社 体積型ホログラム記録用感光性組成物及びそれを用いた体積型ホログラム記録用感光性媒体
KR20040049317A (ko) * 2001-10-03 2004-06-11 가부시끼가이샤 한도따이 센단 테크놀로지스 미세 패턴 형성 방법
EP1302441B1 (de) * 2001-10-10 2007-01-03 Rohm And Haas Company Verbessertes Verfahren zur Herstellung von Lithiumborohydrid
US20040106062A1 (en) * 2001-10-31 2004-06-03 Petrov Viacheslav Alexandrovich Photoacid generators in photoresist compositions for microlithography
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP2003160612A (ja) * 2001-11-26 2003-06-03 Daicel Chem Ind Ltd フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
US7205086B2 (en) * 2001-11-26 2007-04-17 E. I. Du Pont De Nemours And Company Multilayer elements containing photoresist compositions and their use in microlithography
US7335454B2 (en) 2001-12-13 2008-02-26 Fujifilm Corporation Positive resist composition
US6800416B2 (en) * 2002-01-09 2004-10-05 Clariant Finance (Bvi) Ltd. Negative deep ultraviolet photoresist
TWI314250B (en) * 2002-02-19 2009-09-01 Sumitomo Chemical Co Positive resist composition
US7108951B2 (en) 2002-02-26 2006-09-19 Fuji Photo Film Co., Ltd. Photosensitive resin composition
JP3841400B2 (ja) 2002-02-26 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
CN1639640A (zh) * 2002-03-01 2005-07-13 E·I·内穆尔杜邦公司 用于显微平版印刷的氟化共聚物
TW200403522A (en) * 2002-03-01 2004-03-01 Shipley Co Llc Photoresist compositions
TW200401164A (en) * 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
JP4010160B2 (ja) * 2002-03-04 2007-11-21 旭硝子株式会社 レジスト組成物
US7160666B2 (en) 2002-03-06 2007-01-09 Fuji Photo Film Co., Ltd. Photosensitive resin composition
TWI299816B (en) * 2002-04-03 2008-08-11 Sumitomo Chemical Co Positive resist composition
JP4007581B2 (ja) 2002-04-19 2007-11-14 富士フイルム株式会社 ポジ型レジスト組成物
KR100955006B1 (ko) 2002-04-26 2010-04-27 후지필름 가부시키가이샤 포지티브 레지스트 조성물
US7727777B2 (en) * 2002-05-31 2010-06-01 Ebrahim Andideh Forming ferroelectric polymer memories
US6939662B2 (en) 2002-05-31 2005-09-06 Fuji Photo Film Co., Ltd. Positive-working resist composition
TWI284779B (en) 2002-06-07 2007-08-01 Fujifilm Corp Photosensitive resin composition
KR100584810B1 (ko) * 2002-06-11 2006-05-30 주식회사 이엔에프테크놀로지 비닐 알킬(1-아다만틸) 에테르 및 그 제조방법
US20030235775A1 (en) 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
JP3986911B2 (ja) 2002-07-15 2007-10-03 松下電器産業株式会社 パターン形成材料及びパターン形成方法
WO2004014964A2 (en) * 2002-08-09 2004-02-19 E. I. Du Pont De Nemours And Company PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY
EP1539690A4 (de) * 2002-08-09 2007-01-24 Du Pont Fluorierte monomere, fluorierte polymere mit polycyclischen gruppen mit annelierten 4-gliedrigen heterocyclischen ringen, die zur verwendung als photoresists geeignet sind, und mikrolithographieverfahren
US6830871B2 (en) 2002-08-19 2004-12-14 Fuji Photo Film Co., Ltd. Chemical amplification type resist composition
US7312287B2 (en) * 2002-08-19 2007-12-25 E.I. Du Pont De Nemours And Company Fluorinated polymers useful as photoresists, and processes for microlithography
JPWO2004041877A1 (ja) * 2002-11-07 2006-03-09 旭硝子株式会社 含フッ素ポリマー
US7264913B2 (en) 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US6790914B2 (en) * 2002-11-29 2004-09-14 Jsr Corporation Resin film and applications thereof
US6919160B2 (en) 2003-02-20 2005-07-19 Air Products And Chemicals, Inc. Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same
US20040166434A1 (en) 2003-02-21 2004-08-26 Dammel Ralph R. Photoresist composition for deep ultraviolet lithography
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
JP4166598B2 (ja) 2003-03-12 2008-10-15 富士フイルム株式会社 ポジ型レジスト組成物
JP4115309B2 (ja) 2003-03-24 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
US7700257B2 (en) 2003-03-28 2010-04-20 Tokyo Ohka Kogyo Co., Ltd. Photoresist composition and resist pattern formation method by the use thereof
US7150957B2 (en) * 2003-04-25 2006-12-19 International Business Machines Corporation Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions
JP4530751B2 (ja) * 2003-07-24 2010-08-25 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
EP1505439A3 (de) 2003-07-24 2005-04-20 Fuji Photo Film Co., Ltd. Positiv arbeitende photoempfindliche Zusammensetzung und Verfahren zur Herstellung eines Resistmusters
JP2005049695A (ja) 2003-07-30 2005-02-24 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2005060664A (ja) 2003-07-31 2005-03-10 Asahi Glass Co Ltd 含フッ素化合物、含フッ素ポリマーとその製造方法およびそれを含むレジスト組成物
US7138550B2 (en) 2003-08-04 2006-11-21 Air Products And Chemicals, Inc. Bridged carbocyclic compounds and methods of making and using same
WO2005033752A1 (ja) * 2003-10-06 2005-04-14 Dai Nippon Printing Co., Ltd. 防眩フィルム
US20050170277A1 (en) * 2003-10-20 2005-08-04 Luke Zannoni Fluorinated photoresists prepared, deposited, developed and removed in carbon dioxide
JPWO2005042453A1 (ja) 2003-10-31 2007-11-29 旭硝子株式会社 含フッ素化合物、含フッ素ポリマーとその製造方法
JP4322097B2 (ja) * 2003-11-14 2009-08-26 東京応化工業株式会社 Ｅｌ表示素子の隔壁、およびｅｌ表示素子
JP2005162861A (ja) * 2003-12-02 2005-06-23 Asahi Glass Co Ltd 含フッ素ポリマー
US7442487B2 (en) * 2003-12-30 2008-10-28 Intel Corporation Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists
US7081511B2 (en) 2004-04-05 2006-07-25 Az Electronic Materials Usa Corp. Process for making polyesters
JP4407358B2 (ja) 2004-04-14 2010-02-03 旭硝子株式会社 含フッ素ポリマーおよびレジスト組成物
TWI322334B (en) 2004-07-02 2010-03-21 Rohm & Haas Elect Mat Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
US7691556B2 (en) 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US7595141B2 (en) 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP4424246B2 (ja) * 2004-10-28 2010-03-03 旭硝子株式会社 含フッ素共重合体及びその用途
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
EP1691238A3 (de) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
US7834209B2 (en) 2005-06-07 2010-11-16 E.I. Du Pont De Nemours And Company Hydrofluoroalkanesulfonic acids from fluorovinyl ethers
KR101222947B1 (ko) 2005-06-30 2013-01-17 엘지디스플레이 주식회사 인쇄용 용제, 및 그를 이용한 인쇄용 패턴 조성물 및 패턴 형성방법
US7521170B2 (en) 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
EP1762895B1 (de) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflex-Zusammensetzungen für Hartmasken
US7358029B2 (en) * 2005-09-29 2008-04-15 International Business Machines Corporation Low activation energy dissolution modification agents for photoresist applications
US7553905B2 (en) 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
JP5114021B2 (ja) * 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
TWI440978B (zh) * 2006-02-15 2014-06-11 Sumitomo Chemical Co 化學增幅正型阻劑組合物
US8697343B2 (en) 2006-03-31 2014-04-15 Jsr Corporation Fluorine-containing polymer, purification method, and radiation-sensitive resin composition
US7416991B2 (en) * 2006-05-11 2008-08-26 Hitachi Global Storage Technologies Netherlands B. V. High resolution patterning of surface energy utilizing high resolution monomolecular resist for fabrication of patterned media masters
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
US7838609B2 (en) * 2007-02-21 2010-11-23 The Nippon Synthetic Chemical Industry Co., Ltd. Polyvinyl alcohol type resin, monolayer film and laminate
CN101308329B (zh) 2007-04-06 2013-09-04 罗门哈斯电子材料有限公司 涂料组合物
US7923200B2 (en) 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
JP4562784B2 (ja) 2007-04-13 2010-10-13 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US20100112299A1 (en) * 2007-04-19 2010-05-06 Norimitsu Matsushita Process for producing photosensitive resin printing plate having concave-convex shape and relief printing plate, and plate surface treatment solution for use in the process
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
KR100989567B1 (ko) * 2007-05-15 2010-10-25 후지필름 가부시키가이샤 패턴형성방법
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
WO2008153110A1 (ja) * 2007-06-12 2008-12-18 Fujifilm Corporation ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
JP5433181B2 (ja) * 2008-03-28 2014-03-05 富士フイルム株式会社 ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
US8062830B2 (en) * 2008-04-21 2011-11-22 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
TWI518456B (zh) * 2008-04-21 2016-01-21 住友化學股份有限公司 化學放大型正阻劑組成物
KR101463290B1 (ko) * 2008-05-23 2014-12-08 코넬 유니버시티 전자 및 전기 장치에 사용되는 유기 물질의 직교 프로세싱
US7745077B2 (en) 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
CN102123837B (zh) 2008-06-20 2014-07-09 3M创新有限公司 聚合物模具和由其制成的制品
WO2009154849A1 (en) 2008-06-20 2009-12-23 3M Innovative Properties Company Molded microstructured articles and method of making same
US20100136477A1 (en) * 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
EP2204694A1 (de) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Fotolithografie
EP2204392A1 (de) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Fotolithografie
JP5440690B2 (ja) * 2010-03-16 2014-03-12 ダイキン工業株式会社 硬化性樹脂組成物、硬化物及び含フッ素重合体
JP5619458B2 (ja) * 2010-03-31 2014-11-05 Hoya株式会社 レジストパターンの形成方法及びモールドの製造方法
JP5602475B2 (ja) 2010-03-31 2014-10-08 Ｈｏｙａ株式会社 レジストパターンの形成方法及びモールドの製造方法
KR101848955B1 (ko) 2010-10-04 2018-04-13 제이에스알 가부시끼가이샤 패턴 형성 방법 및 감방사선성 수지 조성물
JP5940455B2 (ja) * 2010-10-15 2016-06-29 Jsr株式会社 レジストパターン形成方法
KR101907705B1 (ko) 2010-10-22 2018-10-12 제이에스알 가부시끼가이샤 패턴 형성 방법 및 감방사선성 조성물
JP5837812B2 (ja) * 2010-12-27 2015-12-24 Hoya株式会社 レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
JP5798466B2 (ja) * 2010-12-27 2015-10-21 Hoya株式会社 レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
JP5837811B2 (ja) * 2010-12-27 2015-12-24 Hoya株式会社 レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
EP2472329B1 (de) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
JP5482722B2 (ja) * 2011-04-22 2014-05-07 信越化学工業株式会社 パターン形成方法
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US10738174B2 (en) 2012-04-23 2020-08-11 International Business Machines Corporation Aqueous soluble ferrimagnets stabilized by block copolymers
JP6297269B2 (ja) 2012-06-28 2018-03-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ポリマー組成物、このポリマー組成物を含むフォトレジスト、およびこのフォトレジストを含むコーティングされた物品
JP2015028576A (ja) * 2013-07-01 2015-02-12 富士フイルム株式会社 パターン形成方法
US9698014B2 (en) * 2014-07-30 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd Photoresist composition to reduce photoresist pattern collapse
CN105693102B (zh) * 2016-01-12 2018-08-24 中国建筑材料科学研究总院 石英玻璃酸刻蚀用掩膜及石英玻璃摆片的酸刻蚀方法
JP7395278B2 (ja) * 2019-07-31 2023-12-11 日東電工株式会社 感光性組成物、デバイス及びデバイスの製造方法

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287327A (en) * 1961-07-27 1966-11-22 Union Carbide Corp Copolymers of bicyclo [2.2.1] hepta-2, 5-diene
GB1069737A (en) * 1963-12-13 1967-05-24 Montedison Spa Vulcanizable olefin copolymers
US3444148A (en) 1964-10-05 1969-05-13 Du Pont Copolymers of selected polyfluoroper-haloketone adducts with other selected ethylenic compounds
US3650885A (en) 1969-04-04 1972-03-21 Sun Chemical Corp Radiation-curable compositions
JPS576573B2 (de) 1973-11-05 1982-02-05
JPS56139515A (en) 1980-03-31 1981-10-31 Daikin Ind Ltd Polyfluoroalkyl acrylate copolymer
US4382985A (en) 1980-10-11 1983-05-10 Daikin Kogyo Co., Ltd. Process for forming film of fluoroalkyl acrylate polymer on substrate and process for preparing patterned resist from the film
JPS589146A (ja) 1981-07-09 1983-01-19 Nippon Paint Co Ltd 水不要平版用版材
JPS5833246A (ja) 1981-08-24 1983-02-26 Oki Electric Ind Co Ltd ポジ型レジストのパタ−ン形成方法
CA1207099A (en) 1981-12-19 1986-07-02 Tsuneo Fujii Resist material and process for forming fine resist pattern
DE3246825A1 (de) 1982-02-24 1983-09-01 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Positives resistmaterial
US4538250A (en) * 1982-12-27 1985-08-27 Allied Corporation Construction and method for elongated towed underwater sonar
EP0157262B1 (de) 1984-03-19 1988-06-08 Nippon Oil Co. Ltd. Elektronenstrahlenempfindliche Materialien
JPH0621109B2 (ja) 1984-07-09 1994-03-23 ダイキン工業株式会社 含フツ素アクリル酸エステル
ATE43924T1 (de) 1984-08-10 1989-06-15 Siemens Ag Thermostabiles, durch bestrahlung vernetzbares polymersystem fuer mikroelektronische anwendung.
US4876322A (en) 1984-08-10 1989-10-24 Siemens Aktiengesselschaft Irradiation cross-linkable thermostable polymer system, for microelectronic applications
US4751166A (en) * 1984-10-22 1988-06-14 Hoechst Celanese Corp. Negative working diazo color proofing method
FR2573069B1 (fr) 1984-11-09 1987-07-17 Inst Nat Rech Chimique Nouveaux derives halogenocyclopropaniques, notamment acetals d'halogeno-2 fluoro-2 cyclopropanones, leur procede d'obtention et leur application a la fabrication de fluoro-2 acrylates d'alkyle ou d'aryle
EP0230656B1 (de) 1985-12-25 1991-03-13 Tosoh Corporation Halogen enthaltende Polyacrylat-Derivate
JPS62186907A (ja) 1986-02-13 1987-08-15 Agency Of Ind Science & Technol 液体混合物の分離膜
EP0240726A3 (de) 1986-03-05 1987-12-09 Daikin Industries, Limited Photolackmaterial
JPS62223750A (ja) 1986-03-26 1987-10-01 Toray Ind Inc 放射線感応ポジ型レジストおよび該レジスト組成物
US4965158A (en) * 1986-08-01 1990-10-23 Xerox Corporation Toner compositions with modified charge enhancing additives
JPH0778629B2 (ja) 1986-12-19 1995-08-23 ミノルタ株式会社 ポジ型レジスト膜及びそのレジストパターンの形成方法
JPS63158541A (ja) 1986-12-23 1988-07-01 Tosoh Corp レジストパタ−ン形成方法
JPH087441B2 (ja) 1986-12-29 1996-01-29 凸版印刷株式会社 ポジ型高感度放射線感応性レジスト
JPS6429837A (en) 1987-07-27 1989-01-31 Tosoh Corp Method for forming positive resist pattern
JPS6429837U (de) 1987-08-13 1989-02-22
JPS6449039A (en) 1987-08-20 1989-02-23 Tosoh Corp Method for forming positive resist pattern
WO1989003402A1 (en) 1987-10-07 1989-04-20 Terumo Kabushiki Kaisha Ultraviolet-absorbing polymer material and photoetching process
JPH01118127A (ja) 1987-10-31 1989-05-10 Fujitsu Ltd パターン形成方法
FR2623510B1 (fr) 1987-11-20 1992-10-23 Ecole Nale Superieure Chimie Polymeres a base d'halo et de methacrylates de pentafluorophenyle et leur application a la realisation de fibres optiques, de photoresists positifs, de verres organiques et de resines pour disques optiques
JPH01276129A (ja) 1988-04-27 1989-11-06 Sekisui Chem Co Ltd 感光性樹脂組成物
JPH02202904A (ja) 1989-02-02 1990-08-13 Daikin Ind Ltd 含フツ素メタクリル酸エステル系重合体及びレジスト材料
EP0437619B1 (de) 1989-07-07 1995-08-30 Daikin Industries, Limited Fluoriniertes copolymer und verfahren zu seiner herstellung
US5229473A (en) 1989-07-07 1993-07-20 Daikin Industries Ltd. Fluorine-containing copolymer and method of preparing the same
JP2643599B2 (ja) * 1989-07-07 1997-08-20 ダイキン工業株式会社 含フッ素共重合体およびその製造方法
JP2659025B2 (ja) 1990-01-24 1997-09-30 富士通株式会社 放射線用レジスト及びその製造方法及びパターン形成方法
DE4002397A1 (de) 1990-01-27 1991-08-01 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JPH03226756A (ja) 1990-01-31 1991-10-07 Daikin Ind Ltd レジスト、その製造方法およびそれを用いるレジストパターンの形成方法
JPH04171452A (ja) 1990-11-02 1992-06-18 Daikin Ind Ltd レジストおよびそれを用いる微細レジストパターンの形成法
JP3032851B2 (ja) 1991-11-08 2000-04-17 株式会社野田スクリーン スクリーン版用樹脂組成物、スクリーン版用フィルム、及びスクリーン版
DE4207264B4 (de) 1992-03-07 2005-07-28 Clariant Gmbh Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
DE4207263A1 (de) 1992-03-07 1993-09-09 Hoechst Ag Niedermolekulare saeurespaltbare verbindungen mit 2,2-bis-trifluormethyl-oxaethano-brueckengliedern und deren verwendung
DE4319178C2 (de) 1992-06-10 1997-07-17 Fujitsu Ltd Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator
US5426164A (en) 1992-12-24 1995-06-20 The Dow Chemical Company Photodefinable polymers containing perfluorocyclobutane groups
JP3277114B2 (ja) 1995-02-17 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 陰画調レジスト像の作製方法
JP3226756B2 (ja) 1995-06-06 2001-11-05 本田技研工業株式会社 サッシレスドアのガラスの組付け位置調整方法及び調整治具
JP3046225B2 (ja) * 1995-06-15 2000-05-29 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液
JPH0943856A (ja) 1995-07-26 1997-02-14 Asahi Glass Co Ltd 含フッ素重合体膜にパターンを形成する方法
JPH0943845A (ja) 1995-07-31 1997-02-14 Fuji Photo Film Co Ltd ネガ型画像記録材料
JP3804138B2 (ja) 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
EP0885405B1 (de) 1996-03-07 2005-06-08 Sumitomo Bakelite Co., Ltd. Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3766140B2 (ja) * 1996-06-21 2006-04-12 笠尾 敦司 画像加工合成方法およびその装置
JPH10142779A (ja) 1996-11-05 1998-05-29 Fuji Photo Film Co Ltd 感光性樹脂組成物及び感光性多層シート
US6110640A (en) 1996-11-14 2000-08-29 Fuji Photo Film Co., Ltd. Photosensitive composition
US5962612A (en) * 1996-11-28 1999-10-05 Asahi Glass Company Ltd. Fluorine-containing copolymer having rings on its main chain
JP3851398B2 (ja) 1997-01-27 2006-11-29 富士写真フイルム株式会社 ポジ型感光性組成物
US5876897A (en) 1997-03-07 1999-03-02 Clariant Finance (Bvi) Limited Positive photoresists containing novel photoactive compounds
JP3650985B2 (ja) * 1997-05-22 2005-05-25 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物およびパターン製造法
EP0887706A1 (de) * 1997-06-25 1998-12-30 Wako Pure Chemical Industries Ltd Spezifisches Vernetzungsmittel enthaltende Resistzusammensetzung
US6143472A (en) * 1998-11-18 2000-11-07 Wako Pure Chemical Industries, Ltd. Resist composition and a method for formation of a pattern using the composition
IL141803A0 (en) * 1998-09-23 2002-03-10 Du Pont Photoresists, polymers and processes for microlithography
US6884562B1 (en) * 1998-10-27 2005-04-26 E. I. Du Pont De Nemours And Company Photoresists and processes for microlithography
DE60013270T2 (de) 1999-05-04 2005-09-22 E.I. Du Pont De Nemours And Co., Wilmington Polyfluorierte epoxide und assozierte polymere und verfahren
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
EP1183571B1 (de) 1999-05-04 2010-06-02 E.I. Du Pont De Nemours And Company Fluorierte photoresists und verfahren für die mikrolithographie
WO2001085811A2 (en) * 2000-05-05 2001-11-15 E.I. Du Pont De Nemours And Company Copolymers for photoresists and processes therefor
WO2003040827A1 (en) * 2001-10-26 2003-05-15 E. I. Du Pont De Nemours And Company Fluorinated polymers having ester groups and photoresists for microlithography
US6875555B1 (en) * 2003-09-16 2005-04-05 E.I. Du Pont De Nemours And Company Preparation and use of EXO-2-fluoroalkyl(bicyclo[2.2.1] hept-5-enes)

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US6593058B1 (en) 2003-07-15
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