EP1326903A2 - Zusammensetzungen für die mikrolithographie - Google Patents

Zusammensetzungen für die mikrolithographie

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Publication number
EP1326903A2
EP1326903A2 EP01987900A EP01987900A EP1326903A2 EP 1326903 A2 EP1326903 A2 EP 1326903A2 EP 01987900 A EP01987900 A EP 01987900A EP 01987900 A EP01987900 A EP 01987900A EP 1326903 A2 EP1326903 A2 EP 1326903A2
Authority
EP
European Patent Office
Prior art keywords
group
fluorine
containing polymer
carbon atoms
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01987900A
Other languages
English (en)
French (fr)
Inventor
Larry L. Berger
Michael Karl Crawford
Jerald Feldman
Lynda Kaye Johnson
Iii Frank L. Schadt
Jr. Fredrick Claus Zumsteg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of EP1326903A2 publication Critical patent/EP1326903A2/de
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Definitions

  • the present invention pertains to photoimaging and, in particular, the use of photoresists (positive-working and/or negative-working) for imaging in the production of semiconductor devices.
  • the present invention also pertains to novel fluorine-containing polymer compositions having high UV transparency (particularly at short wavelengths, e.g. ,157 nm) which are useful in photoresist compositions and antireflective coatings.
  • Polymer products are used as components of imaging and photosensitive systems and particularly in photoimaging systems such as those described in Introduction to Microlithoqraphv, Second Edition by L. F. Thompson, C. G. Willson, and M. J. Bowden, American Chemical
  • UV light or other electromagnetic radiation impinges on a material containing a photoactive component to induce a physical or chemical change in that material.
  • a useful or latent image is thereby produced which can be processed into a useful image for semiconductor device fabrication.
  • a photosensitive composition contains one or more photoactive components in addition to the polymer product.
  • the photoactive component Upon exposure to electromagnetic radiation (e.g., UV light), the photoactive component acts to change the rheological state, solubility, surface characteristics, refractive index, color, electromagnetic characteristics or other such physical or chemical characteristics of the photosensitive composition as described in the Thompson et al. publication supra.
  • UV far or extreme ultraviolet
  • Positive working resists generally are utilized for semiconductor manufacture.
  • Lithography in the UV at 365 nm (l-line) using novolak polymers and diazonaphthoquinones as dissolution inhibitors is a currently established chip technology having a resolution limit of about 0.35-0.30 micron.
  • Lithography in the far UV at 248 nm using p-hydroxystyrene polymers is known and has a resolution limit of 0.35-0.18 nm.
  • Photolithography using 193 nm exposure wavelength is a leading candidate for future microelectronics fabrication using 0.18 and 0.13 ⁇ m design rules.
  • Photolithography using 157 nm exposure wavelength is a leading candidate for future microlithography further out on the time horizon (beyond 193 nm) provided suitable materials can be found having sufficient transparency and other required properties at this very short wavelength.
  • the opacity of traditional near UV and far UV organic photoresists at 193 nm or shorter wavelengths precludes their use in single-layer schemes at these short wavelengths.
  • Some resist compositions suitable for imaging at 193 nm are known.
  • photoresist compositions comprising cycloolefin- maleic anhydride alternating copolymers have been shown to be useful for imaging of semiconductors at 193 nm (see F. M. Houlihan et al, Macromolecules, 30, pages 6517-6534 (1997); T. Wallow et al., SPIE, Vol. 2724, pages 355-364; and F. M. Houlihan et al., Journal of Photopolymer Science and Technology, 10, No. 3, pages 511-520 (1997)).
  • Several publications are focused on 193 nm resists (i.e., U.
  • compositions comprising addition polymers and/or ROMP (ring-opening methathesis polymerization) of functionalized norbornenes have been disclosed in PCT WO 97/33198.
  • Copolymers of flourinated alcohol-substituted polycyclic ethylenically unsaturated comonomer and sulfur dioxide that are suitable for 193 nm lithography have been reported (see H. Ito et al., "Synthesis and Evaluation of Alicyclic Backbone Polymers for 193 nm Lithography", Chapter 16, ACS Symposium Series 706 (Micro- and Nanopatteming Polymers) pages 208-223 (1998), and H. Ito et al., Abstract in Polymeric Materials Science and Engineering Division, American Chemical Society Meeting, Volume 77, Fall Meeting, September 8-11 , 1997, held in Las Vegas, NV). Because of the presence of repeat units derived from sulfur dioxide in this alternating copolymer, it is not suitable for 157 nm lithography due to the excessively high absorption coefficient of this polymer at 157 nm.
  • Photoresists containing fluorinated alcohol functional groups attached to aromatic moieties have been disclosed (see K. J. Przybilla et al., "Hexafluoroacetone in Resist Chemistry: A Versatile New Concept for Materials for Deep UV Lithography", SPIE Vol. 1672, (1992), pages 500-512). While suitable for 248 nm lithography, these resists, because of the aromatic functionality contained in them, are unsuitable for lithography at 193 or 157 nm (due to the excessively high absorption coefficients of the aromatic resist components at these wavelengths). Copolymers of fluoroolefin monomers and cyclic unsaturated monomers are disclosed in U.S. Patent Nos.
  • Copolymers of certain fluorinated olefins with certain vinyl esters are known.
  • the copolymer of trifluoroethylene (TFE) with cyclohexanecarboxylate, vinyl ester is disclosed in Japanese Patent Appln. JP 03281664.
  • Copolymers of TFE and vinyl esters, such as vinyl acetate, and use of these copolymers in photosensitive compositions for refractive index imaging (e.g., holography) is disclosed in U.S. Patent 4,963,471 to DuPont.
  • Copolymers of norbornene-type monomers containing functional groups with ethylene are disclosed in WO 98/56837 and copolymers of norbornene-type monomers containing functional groups with vinyl ethers, dienes, and isobutylene, are disclosed in US 5,677,405.
  • Norbomene/ethylene copolymerizations catalyzed by nickel catalysts are disclosed in US Patent No. 5,929,181.
  • ARC antireflective coatings
  • BARC BARC
  • TARC TARC
  • Antireflective coating layers have been shown to reduce the deleterious effects of film thickness variations and the resulting standing waves caused by the interference of light reflecting from various interfaces within the photoresist structure and the variations in the exposure dose in the photoresist layer due to loss of the reflected light.
  • the use of these antireflective coating layers results in improved patterning and resolution characteristics of the photoresist materials because they suppress reflection related effects.
  • the invention relates to a fluorine-containing polymer comprising the reaction product of (A) a spacer group and (B) a repeat unit derived from a monomer containing a norbornyl radical and a functional group containing the structure:
  • Rf and Rf' are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2) n wherein n is an integer ranging from 2 to about 10 and R ⁇ is a hydrogen atom or an acid- or base-labile protecting group.
  • the invention provides a fluorine-containing polymer prepared from at least (A) a spacer group selected from the group consisting of ethylene, alpha-olefins, 1 ,1 '-disubstituted olefins, vinyl alcohols, vinyl ethers, and 1 ,3-dienes; and
  • , R2, R3, and R4 independently is hydrogen, a halogen atom, a hydrocarbon group containing from 1 to 10 carbon atoms, a substituted hydrocarbon group, an alkoxy group, a carboxylic acid, a carboxylic ester or a functional group containing the structure:
  • Rf and Rf' are the same or different fluoroalkyl groups of from 1 to 10 carbon atoms or taken together are (CF2) n wherein n is 2 to 10; R is hydrogen or an acid- or base-labile protecting group; r is 0-4; at least one of the repeat units (B) has a structure whereby at least one of R-] , R2, R3, and R4 contains the structure C(Rf)(Rf')ORb-
  • the invention provides a photoresist composition
  • a fluorine-containing polymer comprising the reaction product of (A) a spacer group and (B) a repeat unit derived from a monomer containing a norbornyl radical and a functional group containing the structure:
  • Rf and Rf' are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF ) n wherein n is an integer ranging from 2 to about 10 and R b is a hydrogen atom or an acid- or base-labile protecting group; and
  • the invention provides a process for preparing a photoresist image on a substrate comprising, in order: (X) imagewise exposing the photoresist layer to form imaged and non-imaged areas, wherein the photoresist layer is prepared from a photoresist composition comprising:
  • Rf and Rf' are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2) n wherein n is an integer ranging from 2 to about 10 and R b is a hydrogen atom or an acid- or base-labile protecting group; and (b) a photoactive component wherein the fluorine-containing polymer has an absorption coefficient of less than 4.0 ⁇ m-1 at a wavelength of 157 nm; and
  • the invention provides for an element comprising a support, and at least an antireflection layer; wherein the antireflection layer is prepared from a composition comprising at least one fluorine-containing polymer prepared from at least a fluorine-containing reaction product of (A) a spacer group and (B) a monomer containing a norbornyl radical and a functional group containing the structure:
  • Rf and Rf' are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2) n wherein n is an integer ranging from 2 to about 10 and R b is a hydrogen atom or an acid- or base-labile protecting group.
  • the element may further comprise a photoresist layer.
  • the invention provides a process for improved lithographic patterning of a photoresist element having a support, a photoresist layer and an antireflection layer comprising:
  • the antireflection layer is prepared from a composition comprising at least one fluorine-containing polymer prepared from at least a fluorine-containing polymer comprising the reaction product of (A) a spacer group and (B) a monomer containing a norbornyl radical and a functional group containing the structure:
  • Rf and Rf' are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF 2 ) n wherein n is an integer ranging from 2 to about 10 and R b is a hydrogen atom or an acid- or base-labile protecting group; and
  • the fluorine-containing polymers of the invention are prepared from at least a fluorine-containing polymer comprising the reaction product of (A) a spacer group and (B) a monomer containing a norbornyl radical and a functional group containing the structure:
  • Rf and Rf' are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2) n wherein n is an integer ranging from 2 to about 10 and R b is a hydrogen atom or an acid- or base-labile protecting group.
  • the fluorine-containing polymer is prepared from at least a spacer group (A) and a monomer (B).
  • the spacer group is a hydrocarbon compound containing vinylic unsaturation and optionally, containing at least one heteroatom, such as an oxygen atom or a nitrogen atom.
  • the hydrocarbon compound contemplated as the spacer group contains, typically, 2 to 10, more typically 2 to 6 carbon atoms.
  • the hydrocarbon may be straight chain or branched chain.
  • suitable spacer groups are selected from the group consisting of ethylene, alpha-olefins, 1 ,1'-disubstituted olefins, vinyl alcohols, vinyl ethers, and 1 ,3-dienes.
  • the spacer group is an alpha olefin, it is selected from the group consisting of ethylene, propylene, 1-butene, 1-pentene, 1-hexene and 1-octene.
  • the spacer group is a vinyl ether it is selected from the group consisting of methyl vinyl ether and ethyl vinyl ether.
  • vinyl alcohols can be obtained by post-polymerization hydrolysis of a functional group already incorporated into the polymer backbone, e.g. the acetate group of vinyl acetate.
  • the spacer group is a 1 ,3- diene it is butadiene.
  • the spacer group is a 1 ,1 '-disubstituted olefin it is isobutylene or isopentene.
  • Monomer (B) is an ethylenically unsaturated compound containing a norbornyl radical and a fluoroalcohol functional group.
  • These fluoroalkyl groups are designated as Rf and Rf', which can be partially fluorinated alkyl groups or fully fluorinated alkyl groups (i.e., perfluoroalkyl groups).
  • Rf and Rf' are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF 2 ) n wherein n is an integer ranging from 2 to about 10.
  • Rf and Rf' are not separate, discrete fluorinated alkyl groups, but that together they form a ring structure of 3 to about 11 carbon atoms such as is illustrated below in case of a 5-membered ring:
  • R f and R are partially fluorinated alkyl groups there must be a sufficient degree of fluorination present to impart acidity to the hydroxyl (-OH) of the fluoroalcohol functional group, such that the hydroxyl proton is substantially removed in basic media, such as in aqueous sodium hydroxide solution or tetraalkylammonium hydroxide solution.
  • basic media such as in aqueous sodium hydroxide solution or tetraalkylammonium hydroxide solution.
  • Rf and R f ' are independently perfluoroalkyl group of 1 to about 5 carbon atoms, and, most preferably, R f and R f ' are both trifluoromethyl (CF 3 ),
  • , R2, R3, and R4 may, independently, be a hydrogen atom, a halogen atom, a hydrocarbon group containing from 1 to about 10 carbon atoms or a substituted hydrocarbon group.
  • R-j, R 2 , R3, and R4 is a hydrocarbon group the carbon atoms are usually straight chain or branched chain.
  • Typical examples include alkyl groups (methyl ("Me"), ethyl ("Et”), propyl (“Pr”)), carboxylic acid or ester, alkoxy (-OMe, OEt, OPr), halogen (F, CI, Br).
  • substituent Ri , R2, R3, and R4 is a substituted hydrocarbon group
  • the substituent is typically a heteroatom selected from the group consisting of oxygen atom, typically to form an alkoxy group, a carboxylic acid group or a carboxylic ester group.
  • branches may contain "abnormal” branching (see for example World Patent Application 96/23010, which is hereby incorporated by reference, for an explanation of "abnormal” branching).
  • These polymers may typically contain more than 5 methyl ended branches per 1000 methylene groups in polyethylene segments in the polymer, more typically more than 10 methyl ended branches, and most typically more than 20 methyl ended branches.
  • the branches can impart improved solubility to the ethylene copolymers which can be advantageous for preparing photoresists and for other purposes. Branching levels may be determined by NMR spectroscopy, see for instance World Patent Application 96/23010 and other known references for determining branching in polyolefins.
  • methyl ended branches are meant the number of methyl groups corrected for methyl groups present as end groups in the polymer. Also not included as methyl ended branches are groups which are bound to a norbornane ring system as a side group, for example a methyl attached directly to a carbon atom which is bound to a ring atom of a norbornane ring system. These corrections are well known in the art.
  • polymers herein contain at least one mole percent (based on the total number of all repeat units in the copolymer) of the norbomene monomer shown above, more typically at least 2 mole percent, and most typically at least 5 mole percent. Repeat units derived from one or more other copolymerizable monomers, such as alpha-olefins and vinyl ethers may also optionally be present.
  • the free radical polymerization or metal-catalyzed vinyl addition polymerization processes employed in making the polymerization products of this invention are accomplished by such polymerization mechanisms known in the art to afford a polymer having a repeat unit that is derived from the ethylenically unsaturated compound.
  • P, Q, S, and T independently can be the same or different and illustratively could be fluorine, hydrogen, chlorine, and trifluoromethyl.
  • the resulting polymer is a homopolymer. If two or more distinct ethylenically unsaturated compounds undergo polymerization, the resulting polymer is a copolymer.
  • a useful catalyst is a nickel containing complex.
  • Neutral Ni catalysts used in the patent are described in WO Patent Application 9830609.
  • Other references regarding the salicylaldimine-based neutral nickel catalysts include WO Patent Application 9842664. Wang, C; Friedrich, S.; Younkin, T. R.; Li, R. T.; Grubbs, R. H.; Bansleben, D. A.; Day, M. W. Organometallics 1998, 17(15), 314 and Younkin, T.; Connor, E. G.; Henderson, J. I.; Friedrich, S. K.; Grubbs, R. H.; Bansleben, D. A. Science 2000, 287, 460-462.
  • WO 0050470 discloses improvements or variations of largely existing ligands and some new ligands on late metal catalysts, e.g., ligands derived from pyrrole amines instead of anilines and also ligands based on anilines with 2,6-ortho substituents where these ortho substituents are both aryl groups or any aromatic group.
  • Specific examples would be alpha-diimine-based nickel catalysts and salicylaldimine-based nickel catalysts derived from the pyrrole amines and ortho-aromatic-substituted anilines. Some of these derivatives show improved lifetimes/activities/productivities/hydrogen response/potential functional group tolerance, etc.
  • Another useful catalyst is a functional group tolerant, late metal catalyst usually based on Ni(ll) or Pd(ll). Useful catalysts are disclosed in WO 98/56837 and US 5,677,405.
  • cationically polymerizable monomers are monomers such as olefins, isoolefins, branched ⁇ -olefins, vinyl ethers, cyclic ethers, and lactones that normally undergo cationic polymerization.
  • the copolymers formed from norbornene-type monomers and cationically polymerizable monomers have a relatively high norbornene content (-80 mole% in those copolymers that are characterized).
  • Copolymers can be formed using functionalized norbornene comonomers; e.g. 5-norbornene-2-methanol and esters derived from 5-norbornene-2-methanoI.
  • the catalysts and methods disclosed in this application will be suitable for the synthesis of the copolymers of norbornene fluoroalcohols with 1 ,3- dienes, , 1 '-disubstituted olefins, and vinyl ethers that are the subject of the present invention. It is further contemplated that these copolymers may contain greater than approximately 1 mole %, more typically greater than approximately 25 mole %, and most typically greater than approximately 50 mole % of norbornene fluoroalcohol, with suitable adjustment of the monomer feed ratio.
  • Suitable catalysts useful in the preparation of such copolymers include norbornadienepalladium dichloride /silver hexafluoroantimonate, methoxynorbomenylpalladium chloride dimer/ silver hexafluoroantimonate, and [( ⁇ -crotyl)(cycloocta-1 ,5-diene)nickel]- hexafluorophosphate.
  • the copolymer can include acidic groups, which may or may not be protected with acid-labile protecting groups. It is further contemplated that monomer units containing these acidic groups constitute greater than approximately 1 mole %, more typically greater than approximately 25 mole %, and most typically greater than approximately 50 mole% of the polymer. Examples of acidic groups include carboxylic acids, phenols, and fluroalcohols with pKa values of approximately 9 or less.
  • Copolymers of ethylene and protected norbornene fluoroalcohols can be synthesized using Ziegler-Natta and metallocene catalysts based on early transition metals.
  • Suitable protecting groups for fluoroalcohols include alpha-alkoxy ethers. Examples of suitable catalysts may be found in the following references: W. Kaminsky J. Chem. Soc, Dalton Trans. 1988, 1413, and W. Kaminsky Catalysis Today 1994, 20, 257.
  • Any suitable polymerization conditions may be employed in the process of making the polymer. Typically, when metal catalyzed vinyl addition polymerization is used the temperatures are held below about 200°C, typically between 0°C and 160°C. Suitable known solvents may be used such as trichlorobenzene or p-xylene.
  • Each fluorine-containing copolymer according to this invention has an absorption coefficient of less than 4.0 ⁇ m " 1 at a wavelength of 157 nm, preferably of less than 3.5 ⁇ nr ' ' at this wavelength, more preferably, of less than 3.0 ⁇ nr ' ' at this wavelength, and, still more preferably, of less than 2.5 ⁇ m " 1 at this wavelength.
  • CH 2 CHOCH 2 CH 2 OCH 2 C(CF 3 ) 2 OH
  • CH 2 CHO(CH 2 ) 4 OCH 2 C(CF 3 ) 2 OH
  • the fluorine-containing polymer may be photactive, i.e. the photoactive component may be chemically bonded to the fluorine- containing polymer. This may be accomplished by chemically bonding the photoactive component to a monomer which then undergoes copolymehzation to the monomers (A) and (B) of the present invention, thus eliminating the need for a separate photoactive component.
  • the ratio of A and B can be important. Typical ranges for each are about 30% to about 70%.
  • One or more additional monomers (C) may be used in the preparation of the fluorine-containing polymers of the invention.
  • an acrylate monomer may be suitable as a monomer (C) in preparing the polymers of the invention.
  • Typical additional monomers include acrylates, olefins containing electron- withdrawing groups (other than fluorine) directly attached to the double bond.
  • These polymers typically terpolymers, may be made by free- radical polymerization, for example, acrylonitrile, vinyl chloride, vinylidene chloride. Alternately, olefins containing aromatic groups attached directly to the double bond; e.g.
  • styrene and alpha-methyl styrene are also useful.
  • Vinyl acetate is also useful as an additional monomer.
  • fluorine-containing polymers are useful in preparing photoresist compositions that comprise the fluorine-containing polymer, at least one photoactive component and optionally a dissolution inhibitor.
  • the photoactive component may be chemically bonded to the fluorine- containing polymer or it may be a separate component used in combination with the fluorine-containing polymer.
  • Photoactive Component (PAC) is a separate component used in combination with the fluorine-containing polymer.
  • the compositions of this invention may contain a photoactive component (PAC) that is not chemically bonded to the fluorine-containing polymer, i.e. the photoactive component is a separate component in the composition.
  • the photoactive component usually is a compound that produces either acid or base upon exposure to actinic radiation. If an acid is produced upon exposure to actinic radiation, the PAC is termed a photoacid generator (PAG). If a base is produced upon exposure to actinic radiation, the PAC is termed a photobase generator (PBG).
  • Suitable photoacid generators for this invention include, but are not limited to, 1) sulfonium salts (structure I), 2) iodonium salts (structure II), and 3) hydroxamic acid esters, such as structure III.
  • R5-R7 are independently substituted or unsubstituted aryl or substituted or unsubstituted C 1 -C 2 o alkylaryl (aralkyl).
  • Representative aryl groups include, but are not limited to, phenyl and naphthyl.
  • Suitable substituents include, but are not limited to, hydroxyl (-OH) and C-
  • dissolution inhibitors can be utilized in this invention.
  • dissolution inhibitors (Dls) for the far and extreme UV resists e.g., 193 nm resists
  • Dls dissolution inhibitors
  • Some dissolution inhibiting compounds also serve as plasticizers in resist compositions.
  • Bile-salt esters are particularly useful as Dls in the compositions of this invention.
  • Bile-salt esters are known to be effective dissolution inhibitors for deep UV resists, beginning with work by Reichmanis et al. in 1983. (E. Reichmanis et al., "The Effect of Substituents on the Photosensitivity of 2-Nitrobenzyl Ester Deep UV Resists", J. Electrochem. Soc.
  • Bile-salt esters are particularly attractive choices as Dls for several reasons, including their availability from natural sources, their possessing a high alicyclic carbon content, and particularly for their being transparent in the Deep and vacuum UV region of the electromagnetic spectrum (e.g., typically they are highly transparent at 193 nm). Furthermore, the bile-salt esters are also attractive Dl choices since they may be designed to have widely ranging hydrophobic to hydrophi c compatibilities depending upon hydroxyl substitution and functionahzation
  • Representative bile-acids and bile-acid derivatives that are suitable as additives and/or dissolution inhibitors for this invention include, but are not limited to, those illustrated below, which are as follows cholic acid (IV), deoxychohc acid (V), litrocho c acid (VI), t-butyl deoxycholate (VII), t-butyl lithocholate (VIII), and t-butyl-3- ⁇ -acetyl lithocholate (IX) Bile-acid esters, including compounds VII-IX, are preferred dissolution inhibitors in this invention
  • the amount of dissolution inhibitor can vary depending upon the choice of polymer When the polymer lacks sufficient protected acid group for suitable image forming a dissolution inhibitor can be used to enhance the image forming properties of the photoresist composition
  • Other Components
  • compositions of this invention can contain optional additional components
  • additional components include, but are not limited to, resolution enhancers, adhesion promoters, residue reducers, coating aids, plasticizers, solvents and T g (glass transition temperature) modifiers
  • Crosslinking agents may also be present in negative-working resist compositions
  • Some typical crosslinking agents include bis-azides, such as,4,4'-d ⁇ az ⁇ dod ⁇ phenyl sulfide and 3,3'- diazidodiphenyl sulfone.
  • suitable solvents are 2-heptanone, trichlorobenzene, methanol, 1 ,1 ,2,2-tetrachloroethane, d 2 ethyl ether and p-xylene.
  • the photoresist layer is prepared by applying a photoresist composition onto a substrate and drying to remove the solvent.
  • the so formed photoresist layer is sensitive in the ultraviolet region of the electromagnetic spectrum and especially to those wavelengths less than or equal to about 365 nm.
  • Imagewise exposure of the resist compositions of this invention can be done at many different UV wavelengths including, but not limited to, 365 nm, 248 nm, 193 nm, 157 nm, and lower wavelengths.
  • Imagewise exposure is preferably done with ultraviolet light of 248 nm, 193 nm, 157 nm, or lower wavelengths, preferably it is done with ultraviolet light of 193 nm, 157 nm, or lower wavelengths, and most preferably, it is done with ultraviolet light of 157 nm or lower wavelengths.
  • Imagewise exposure can either be done digitally with a laser or equivalent device or non-digitally with use of a photomask. Digital imaging with a laser is preferred.
  • Suitable laser devices for digital imaging of the compositions of this invention include, but are not limited to, an argon- fluorine excimer laser with UV output at 193 nm, a krypton-fluorine excimer laser with UV output at 248 nm, and a fluorine (F 2 ) laser with output at 157 nm. Since, as discussed supra, use of UV light of lower wavelength for imagewise exposure corresponds to higher resolution (lower resolution limit), the use of a lower wavelength (e.g., 193 nm or 157 m or lower) is generally preferred over use of a higher wavelength (e.g., 248 nm or higher).
  • the fluorine-containing components in the resist compositions of this invention must contain sufficient functionality for development following imagewise exposure to UV light.
  • the functionality is acid or protected acid such that aqueous development is possible using a basic developer such as sodium hydroxide solution, potassium hydroxide solution, or ammonium hydroxide solution.
  • the fluorine-containing polymers in the resist compositions of this invention are typically acid-containing materials comprised of at least one fluoroalcohol-containing monomer of structural unit:
  • the level of acidic fluoroalcohol groups is determined for a given composition by optimizing the amount needed for good development in aqueous alkaline developer.
  • development of the photoresist composition may require that the binder material should contain sufficient acid groups (e.g., fluoroalcohol groups) and/or protected acid groups that are at least partially deprotected upon exposure to render the photoresist (or other photoimageable coating composition) processable in aqueous alkaline developer.
  • the photoresist layer will be removed during development in portions which are exposed to UV radiation but will be substantially unaffected in unexposed portions during development by aqueous alkaline liquids such as wholly aqueous solutions containing 0.262 N tetramethylammonium hydroxide (with development at 25°C usually for less than or equal to 120 seconds, typically less than 90 seconds and in some instances less than 5 seconds).
  • aqueous alkaline liquids such as wholly aqueous solutions containing 0.262 N tetramethylammonium hydroxide (with development at 25°C usually for less than or equal to 120 seconds, typically less than 90 seconds and in some instances less than 5 seconds).
  • a negative-working photoresist layer the photoresist layer will be removed during development in portions which are unexposed to UV radiation but will be substantially unaffected in exposed portions during development using either a critical fluid or an organic solvent.
  • a critical fluid is one or more substances heated to a temperature near or above its critical temperature and compressed to a pressure near or above its critical pressure.
  • Critical fluids in this invention are at least at a temperature that is higher than 15°C below the critical temperature of the fluid and are at least at a pressure higher than 5 atmosphers below the critical pressure of the fluid.
  • Carbon dioxide may be used for the critical fluid in the present invention.
  • Various organic solvents can also be used as developer in this invention. These include, but are not limited to, halogenated solvents and non-halogenated solvents. Halogenated solvents are typical and fluorinated solvents are more typical.
  • the substrate employed in this invention can illustratively be silicon, silicon oxide, silicon nitride, or various other materials used in semiconductive manufacture.
  • Such layers may be applied using many different techniques such as spin coating, chemical vapor deposition and aerosol deposition.
  • the design of a composition for use as an antireflective layer is well known to those skilled in the art.
  • the primary optical properties of the material being used for the antireflective coating that must be considered are the optical absorption and the index of refraction, the fluorine-containing polymer of this invention possesses such properties.
  • the invention provides an element comprising a support, and at least an antireflection layer; wherein the antireflection layer is prepared from a composition comprising
  • the element may further comprise a photoresist layer.
  • the invention also provides a process for improved lithographic patterning of a photoresist element having a support, a photoresist layer and an antireflection layer comprising: (Y) imagewise exposing the photoresist element to form imaged and non-imaged areas, wherein the antireflection layer is prepared from a composition comprising a fluorine-containing polymer of this invention; and
  • the imaging and development steps are conducted as described earlier.
  • the antireflection layer may be removed during the development of the photoresist having imaged and non-imaged areas or it may be removed separately using aqueous or solvent development, or by conventional dry etch processes as are know in the art.
  • the photoresist layer may be any photoresist layer know to one skilled in the art with the proviso that it has an absorption coefficient of less than 4.0 ⁇ nr at a wavelength of 157 nm.
  • the fluorine-containing polymer has been described in detail earlier in the specification.
  • the antireflection layer may be present between the support and the photoresist layer or it may be present on the surface of the photoresist layer away from the support.
  • copolymers herein are also useful as molding resins (if thermoplastics) or as elastomers (if elastomeric). Polymers containing
  • copolymers are also useful in polymer blends, particularly as compatibilizers between different types of polymers, for example ethylene copolymers of this invention may compatibilize blends of polyolefins such as polyethylene and more polar polymers such as poly(meth)acrylates, polyesters, or polyamides.
  • Total Me Total number of methyl groups per 1000 methylene groups as determined by 1 H or 13 C NMR analysis
  • PDI Polydispersity; M w divided by M n
  • a glass insert with a gas inlet was loaded with 0.02 mmol of the nickel complex A, B, or C and 40 equiv (0.4095 g) of B(C 6 F 5 ) 3 .
  • Trichlorobenzene (9 mL) was added to the glass insert, which was then cooled to -30°C in the drybox freezer.
  • Norbornene- HFIP (1.52 g) was dissolved in 1 mL of Et 2 0 and the resulting solution was added on top of the frozen trichlorobenzene. The insert was immediately cooled again in the -30°C drybox freezer.
  • the gas inlet of the cold insert was covered with electrical tape and the insert was sealed with a greased cap and removed from the drybox atmosphere. Outside of the drybox, the tube was placed in a plastic bag. The bag was sealed, placed in a bucket and surrounded with dry ice. After removing the electrical tape, the glass insert was transferred to a pressure tube. The pressure tube was sealed, evacuated, placed under ethylene (300 psi) and shaken mechanically for approximately 18 h at room temperature (rt). Following the completion of the reaction, methanol (-20 mL) was added to the glass insert in order to precipitate the polymer. The copolymer was isolated and dried under vacuum.
  • Nickel complex B (0.0106 g) was used and the above general procedure was followed. The resulting copolymer of ethylene and norbornene-HFIP was isolated as 3.11 g of a white powder.
  • 1 H NMR 0.8 mole % norbornene-HFIP incorporated; M n ⁇ 18,040; 42.9 total methyl- ended branches per 1000 CH 2 .
  • 13 C NMR 0.92 mole % norbornene- HFIP incorporated.
  • Example 3 Example 3:
  • Nickel complex C (0.0094 g) was used and the above general procedure was followed.
  • the resulting copolymer of ethylene and norbornene-HFIP was isolated as 1.01 g of a white powder.
  • 1 H NMR 0.3 mole % norbornene-HFIP incorporated; M n ⁇ 9,240; 29.1 total methyl- ended branches per 1000 CH 2 .
  • 13 C NMR 0.33 mole % norbornene- HFIP incorporated.
  • Example 6 In a nitrogen-purged drybox, a glass insert with a gas inlet was loaded with 0.04 mmol of the nickel complex B (0.0205 g) and 20 equiv (0.4095 g) of B(C 6 F 5 ) 3 .
  • p-Xylene 8 mL was added to the glass insert, which was then cooled to -30 °C in the drybox freezer.
  • Norbornene-HFIP (2 mL) was dissolved in 1 mL of Et 2 0 and the resulting solution was added on top of the frozen p-xylene. The insert was immediately cooled again in the -30°C drybox freezer.
  • the gas inlet of the cold insert was covered with electrical tape and the insert was sealed with a greased cap and removed from the drybox atmosphere. Outside of the drybox, the tube was placed in a plastic bag. The bag was sealed, placed in a bucket and surrounded with dry ice. After removing the electrical tape, the glass insert was transferred to a pressure tube. The pressure tube was sealed, evacuated, placed under ethylene 150 psi) and shaken mechanically for approximately 18 h at room rt. Following the completion of the reaction, methanol (-20 mL) was added to the glass insert in order to precipitate the polymer. The copolymer was isolated and dried under vacuum to yield 1.75 g of a white powder.
  • 13 C NMR spectra was obtained unlocked at 140 °C using 310 mg of sample and 60 mg CrAcAc in a total volume of 3.1 mL TCB using a Varian Unity 400 NMR spectrometer with a 10 mm probe. . 13 C NMR: 2.14 mole % norbornene-HFIP incorporated in the branched ethylene copolymer.
  • a glass insert was loaded with the nickel compound and B(C 6 Fs) 3 and, optionally, NaBAF.
  • p-xylene was added to the glass insert followed by the addition of NRBF or NBFOH.
  • the insert was greased and capped.
  • the glass insert was then loaded in a pressure tube inside the drybox.
  • the pressure tube was then sealed, brought outside of the drybox, connected to the pressure reactor, placed under the desired ethylene pressure and shaken mechanically. After the stated reaction time, the ethylene pressure was released and the glass insert was removed from the pressure tube.
  • the polymer was separated into methanol-soluble and -insoluble fractions by the addition of MeOH (-20 mL).
  • Total methyls per 1000 CH 2 were measured using different NMR resonances in 1 H and 13 C NMR spectra. Because of accidental overlaps of peaks and different methods of correcting the calculations, the values measured by 1 H and 1 3 C NMR spectroscopy will not be exactly the same, but they will be close, normally within 10-20% at low levels of comonomer incorporation. In 1 C NMR spectra, the total methyls per 1000 CH 2 are the sums of the 1 B-j, 1 B 2 , 1 B 3 , and 1 B 4+ , EOC resonances per 1000 CH 2 . The total methyls measured by 3 C NMR spectroscopy do not include the minor amounts of methyls from the methyl vinyl ends.
  • the homopolymer of NRBF is typically a white powder, as is the homopolymer of ethylene made by catalyst N-1. Therefore, the appearance of these polymers as viscous oils and also their methanol-solubility is consistent with them being copolymers of NRBF and ethylene. Yield and appearance of MeOH-soluble fractions:
  • Example 7 2.50 g viscous yellow oil
  • Example 8 2.11 g viscous yellow oil
  • Example 9 1 g viscous yellow oil; Example 10. 0.34 g viscous yellow oil;
  • Example 11 1.18 g viscous yellow oil
  • Example 12 0.44 g viscous yellow oil
  • Example 18 Example 6 was repeated with the exception that the procedure and methods used for Examples 7-17 were followed. That is, the methanol- soluble polymer fraction was isolated as well as the methanol-insoluble polymer fraction. NRBF o was used as the comonomer.
  • the yield of the methanol-insoluble fraction was 0.19 g.
  • the yield and characterization of the methanol-soluble fraction was 0.75 g: 29.61 mole percent NRBF incorporation; 44.7 Me/1000 CH 2 ; Mn: No olefins.
  • 248 nm imaging was accomplished by exposing the coated wafer to light obtained by passing broadband UV light from an ORIEL Model- 82421 Solar Simulator (1000 watt) through a 248 nm interference filter which passes about 30% of the energy at 248 nm. Exposure time was 30 seconds, providing an unattenuated dose of 20.5 mJ/cm 2 . By using a mask with 18 positions of varying neutral optical density, a wide variety of exposure doses were generated. After exposure the exposed wafer was baked at 100°C for 60 seconds.
  • TMAH tetramethylammonium hydroxide
  • Example 21 The wafer coating, imaging and developing procedure as described in Example 19 was followed except the development time was for 60 seconds. This test generated a positive image with a clearing dose of 8.3 mJ/cm 2 .
  • Example 21
  • Example 19 The wafer coating procedure as described in Example 19 was followed. A photoresist film of suitable quality was formed on the substrate. However, the quantity of polymer was insufficient to permit a determination of the proper settings for image formation.
  • the product was washed with toluene, leaving behind the lithium salt of the ligand as 0.67 g of a cream powder: 31 P NMR (C 6 D 6 ) ⁇ 6.69 and 0.00.
  • This lithium salt of the ligand (0.43 g), [(H 2 CC(C0 2 Me)CH 2 )Ni( ⁇ -Br)] 2 (0.27 g) and NaBAF (1.00 g) were then placed in a round bottom flask and dissolved in about 20 mL of Et 2 0. The reaction mixture was stirred overnight. The product was filtered through a frit with dry diatomaceous earth.

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US20030130452A1 (en) * 2001-10-12 2003-07-10 Johnson Lynda Kaye Copolymers of ethylene with various norbornene derivatives
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WO2015090441A1 (de) 2013-12-20 2015-06-25 Basf Coatings Gmbh Wässrige primärdispersionen, verfahren zu ihrer herstellung und ihre verwendung
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