KR20040004403A - 마이크로리소그래피용 조성물 - Google Patents

마이크로리소그래피용 조성물 Download PDF

Info

Publication number
KR20040004403A
KR20040004403A KR10-2003-7005196A KR20037005196A KR20040004403A KR 20040004403 A KR20040004403 A KR 20040004403A KR 20037005196 A KR20037005196 A KR 20037005196A KR 20040004403 A KR20040004403 A KR 20040004403A
Authority
KR
South Korea
Prior art keywords
fluorine
group
containing polymer
structural formula
carbon atoms
Prior art date
Application number
KR10-2003-7005196A
Other languages
English (en)
Korean (ko)
Inventor
래리 엘 버거
마이클 칼 크로우포드
제랄드 펠드만
린다 케이예 존슨
프랭크 엘. 3세 쉐트
프레드릭 클라우스 주니어 줌스테그
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이 아이 듀폰 디 네모아 앤드 캄파니 filed Critical 이 아이 듀폰 디 네모아 앤드 캄파니
Publication of KR20040004403A publication Critical patent/KR20040004403A/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
KR10-2003-7005196A 2000-10-18 2001-10-16 마이크로리소그래피용 조성물 KR20040004403A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US69128000A 2000-10-18 2000-10-18
US09/691,280 2000-10-18
PCT/US2001/042743 WO2002033489A2 (en) 2000-10-18 2001-10-16 Compositions for microlithography

Publications (1)

Publication Number Publication Date
KR20040004403A true KR20040004403A (ko) 2004-01-13

Family

ID=24775897

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7005196A KR20040004403A (ko) 2000-10-18 2001-10-16 마이크로리소그래피용 조성물

Country Status (7)

Country Link
EP (1) EP1326903A2 (de)
JP (1) JP2004512396A (de)
KR (1) KR20040004403A (de)
CN (1) CN1214054C (de)
AU (1) AU2002232383A1 (de)
TW (1) TW569079B (de)
WO (1) WO2002033489A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030130452A1 (en) * 2001-10-12 2003-07-10 Johnson Lynda Kaye Copolymers of ethylene with various norbornene derivatives
AU2003213568A1 (en) 2002-03-01 2003-09-16 E.I. Du Pont De Nemours And Company Fluorinated copolymers for microlithography
TWI307819B (en) 2002-05-28 2009-03-21 Arch Spec Chem Inc Acetal protected polymers and photoresist compositions thereof
KR20050069979A (ko) * 2002-08-09 2005-07-05 이 아이 듀폰 디 네모아 앤드 캄파니 포토레지스트, 플루오르화 중합체 및 157 ｎｍ마이크로리소그래피법
KR100804251B1 (ko) * 2003-02-20 2008-02-18 프로메러스, 엘엘씨 포토레지스트 조성물용 용해속도 개질제
JP4377174B2 (ja) 2003-07-25 2009-12-02 富士フイルム株式会社 ポジ型レジスト組成物
RU2669697C1 (ru) * 2013-12-20 2018-10-15 БАСФ Коатингс ГмбХ Водные первичные дисперсии, способ их получения и их применение
CN106444281A (zh) * 2016-09-22 2017-02-22 京东方科技集团股份有限公司 一种光刻胶及刻蚀方法
JP6986986B2 (ja) * 2018-01-30 2021-12-22 三井化学株式会社 フッ素含有環状オレフィン系共重合体および成形体

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL141803A0 (en) * 1998-09-23 2002-03-10 Du Pont Photoresists, polymers and processes for microlithography

Also Published As

Publication number Publication date
AU2002232383A1 (en) 2002-04-29
JP2004512396A (ja) 2004-04-22
WO2002033489A3 (en) 2002-11-21
CN1484659A (zh) 2004-03-24
EP1326903A2 (de) 2003-07-16
CN1214054C (zh) 2005-08-10
WO2002033489A2 (en) 2002-04-25
TW569079B (en) 2004-01-01

Similar Documents

Publication Publication Date Title
JP4402304B2 (ja) フッ素化ポリマー、フォトレジストおよびミクロリソグラフィーのための方法
EP1131677B1 (de) Photoresists, polymere und verfahren für die mikrolithographie
US6790587B1 (en) Fluorinated polymers, photoresists and processes for microlithography
EP1278786B1 (de) Copolymere für photoresistzusammensetzungen und verfahren zur herstellung
US6849377B2 (en) Photoresists, polymers and processes for microlithography
US6503686B1 (en) Nitrile/fluoroalcohol-containing photoresists and associated processes for microlithography
US20040180287A1 (en) Fluorinated polymers having ester groups and photoresists for microlithography
KR100403325B1 (ko) 포토레지스트중합체및이를이용한포토레지스트조성물
US6974657B2 (en) Compositions for microlithography
US20030211417A1 (en) Polymers for photoresist compositions for microlithography
WO2002044814A2 (en) Photoresist compositions comprising bases and surfactants for microlithography
US20040137360A1 (en) Polymers blends and their use in photoresist compositions for microlithography
EP1383812B1 (de) Polycyclische, fluor enthaltende polymere und photoresist für mikrolithographie
KR20040004403A (ko) 마이크로리소그래피용 조성물
EP1325387A2 (de) Auflösungsinhibitoren in photoresistzusammensetzungen für die mikrolithographie
US20030022103A1 (en) Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same
KR20010011772A (ko) 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
EP1279069A2 (de) Polymere für photoresistzusammensetzungen für die microlithographie
US20030017412A1 (en) Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same
EP1246013A2 (de) Photoresists, Polymere und Verfahren für die Mikrolithographie
US20040092686A1 (en) Polycyclic fluorine-containing polymers and photoresists for microlithography

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid