AU2002225766A1 - Protecting groups in polymers, photoresists and processes for microlithography - Google Patents

Protecting groups in polymers, photoresists and processes for microlithography

Info

Publication number
AU2002225766A1
AU2002225766A1 AU2002225766A AU2576602A AU2002225766A1 AU 2002225766 A1 AU2002225766 A1 AU 2002225766A1 AU 2002225766 A AU2002225766 A AU 2002225766A AU 2576602 A AU2576602 A AU 2576602A AU 2002225766 A1 AU2002225766 A1 AU 2002225766A1
Authority
AU
Australia
Prior art keywords
microlithography
photoresists
polymers
processes
protecting groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002225766A
Inventor
Andrew E. Feiring
Viacheslav Alexandrovich Petrov
Iii Frank L. Schadt
Bruce Edmund Smart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of AU2002225766A1 publication Critical patent/AU2002225766A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AU2002225766A 2000-11-29 2001-11-26 Protecting groups in polymers, photoresists and processes for microlithography Abandoned AU2002225766A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25390700P 2000-11-29 2000-11-29
US60/253,907 2000-11-29
PCT/US2001/044447 WO2002044845A2 (en) 2000-11-29 2001-11-26 Protecting groups in polymers, photoresists and processes for microlithography

Publications (1)

Publication Number Publication Date
AU2002225766A1 true AU2002225766A1 (en) 2002-06-11

Family

ID=22962185

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002225766A Abandoned AU2002225766A1 (en) 2000-11-29 2001-11-26 Protecting groups in polymers, photoresists and processes for microlithography

Country Status (8)

Country Link
US (2) US6899995B2 (en)
EP (1) EP1340125A2 (en)
JP (1) JP2004514952A (en)
KR (1) KR20040012688A (en)
CN (1) CN1496496A (en)
AU (1) AU2002225766A1 (en)
TW (1) TW580609B (en)
WO (1) WO2002044845A2 (en)

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US5945253A (en) * 1996-08-29 1999-08-31 Xerox Corporation High performance curable polymers and processes for the preparation thereof
US7122288B2 (en) 2000-03-28 2006-10-17 Fujitsu Limited Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device
WO2002031595A2 (en) * 2000-10-13 2002-04-18 E.I. Dupont De Nemours And Company Dissolution inhibitors in photoresist compositions for microlithography
JP2004514952A (en) * 2000-11-29 2004-05-20 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Protecting groups in polymers, photoresists, and microlithography methods
US7084184B2 (en) * 2002-08-30 2006-08-01 Konica Corporation Actinic ray curable composition, actinic ray curable ink, image forming method, and ink jet recording apparatus
CN100367113C (en) * 2002-12-11 2008-02-06 三星电子株式会社 Composition for forming conjugated polymer pattern and method for forming conjugated polymer pattern using the same composition
US7422836B2 (en) * 2003-02-20 2008-09-09 Promerus Llc Dissolution rate modifiers for photoresist compositions
JP4386848B2 (en) * 2005-01-26 2009-12-16 パナソニック株式会社 Pattern formation method
WO2006099380A2 (en) * 2005-03-11 2006-09-21 E.I. Dupont De Nemours And Company Photoimageable, thermosettable fluorinated resists
JP2009517538A (en) * 2005-11-30 2009-04-30 ゼネラル・エレクトリック・カンパニイ Tulipaline copolymer
US7465498B2 (en) * 2005-11-30 2008-12-16 Sabic Innovative Plastics Ip B.V. Tulipalin copolymers
JP2008013646A (en) * 2006-07-05 2008-01-24 Fujifilm Corp Ink composition, inkjet recording method, printed matter, manufacturing method for planographic printing plate and planographic printing plate
JP4678367B2 (en) * 2006-12-21 2011-04-27 Ｊｓｒ株式会社 Film made of cyclic olefin-based (co) polymer, film made of cyclic olefin-based (co) polymer composition, and crosslinked film of cyclic olefin-based (co) polymer
JP4554665B2 (en) 2006-12-25 2010-09-29 富士フイルム株式会社 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINSE SOLUTION USED FOR THE PATTERN FORMATION METHOD
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4562784B2 (en) 2007-04-13 2010-10-13 富士フイルム株式会社 PATTERN FORMING METHOD, RESIST COMPOSITION, DEVELOPER AND RINSE SOLUTION USED FOR THE PATTERN FORMING METHOD
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
WO2008140119A1 (en) 2007-05-15 2008-11-20 Fujifilm Corporation Method for pattern formation
JP4590431B2 (en) 2007-06-12 2010-12-01 富士フイルム株式会社 Pattern formation method
WO2008153110A1 (en) 2007-06-12 2008-12-18 Fujifilm Corporation Resist composition for negative working-type development, and method for pattern formation using the resist composition
JP4617337B2 (en) 2007-06-12 2011-01-26 富士フイルム株式会社 Pattern formation method
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
CN102314084B (en) * 2010-07-09 2013-05-01 乐凯集团第二胶片厂 Light sensitization composition using p-toluenesulfonylhydrazide hydrazone compound and application of light sensitization composition
CN102314083B (en) * 2010-07-09 2013-08-07 乐凯集团第二胶片厂 Photosensitive composition adopting composite dissolution-resistant agent/dissolution inhibitor and application of same
US9372402B2 (en) * 2013-09-13 2016-06-21 The Research Foundation For The State University Of New York Molecular organometallic resists for EUV
WO2015073534A1 (en) * 2013-11-13 2015-05-21 Orthogonal, Inc. Branched fluorinated photopolymers
JP6168212B2 (en) * 2016-08-02 2017-07-26 Jsr株式会社 Positive radiation-sensitive resin composition, cured film and method for forming the same, semiconductor element, and display element
CN111057027B (en) * 2018-10-17 2022-07-19 湖北固润科技股份有限公司 Fluorine-containing cationic polymerization monomer and synthesis and application thereof

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JP3865919B2 (en) * 1998-02-03 2007-01-10 富士フイルムホールディングス株式会社 Negative photoresist composition
US6303266B1 (en) * 1998-09-24 2001-10-16 Kabushiki Kaisha Toshiba Resin useful for resist, resist composition and pattern forming process using the same
JP3724709B2 (en) 1998-10-27 2005-12-07 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Method for photoresist and microlithography
JP3961139B2 (en) * 1998-12-24 2007-08-22 富士フイルム株式会社 Positive photosensitive composition
TWI263866B (en) * 1999-01-18 2006-10-11 Sumitomo Chemical Co Chemical amplification type positive resist composition
JP3763239B2 (en) * 1999-01-18 2006-04-05 住友化学株式会社 Chemically amplified positive resist composition
JP2001056557A (en) * 1999-08-20 2001-02-27 Fuji Photo Film Co Ltd Positive type photoresist composition for exposure with far ultraviolet ray
JP3390702B2 (en) * 1999-08-05 2003-03-31 ダイセル化学工業株式会社 Polymer compound for photoresist and resin composition for photoresist
US6692889B1 (en) * 1999-08-05 2004-02-17 Daicel Chemical Industries, Ltd. Photoresist polymeric compound and photoresist resin composition
JP4240786B2 (en) * 1999-09-17 2009-03-18 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP2001278919A (en) * 2000-03-30 2001-10-10 Daicel Chem Ind Ltd Polymeric compound for resist and resist composition
US6927011B2 (en) * 2000-07-12 2005-08-09 Mitsubishi Rayon Co., Ltd. Resins for resists and chemically amplifiable resist compositions
JP2002091005A (en) * 2000-09-20 2002-03-27 Fuji Photo Film Co Ltd Positive photoresist composition
JP2004514952A (en) * 2000-11-29 2004-05-20 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Protecting groups in polymers, photoresists, and microlithography methods
DE10137099A1 (en) * 2001-07-30 2003-02-27 Infineon Technologies Ag Chemically-enhanced photo-resist for use, e.g. in the production of structured chips for the semiconductor industry, comprises a solution of polymer with fluorinated acid-labile residues attached to polar groups

Also Published As

Publication number Publication date
WO2002044845A3 (en) 2003-05-01
TW580609B (en) 2004-03-21
WO2002044845A2 (en) 2002-06-06
US20050191579A1 (en) 2005-09-01
US6899995B2 (en) 2005-05-31
US7166416B2 (en) 2007-01-23
EP1340125A2 (en) 2003-09-03
JP2004514952A (en) 2004-05-20
CN1496496A (en) 2004-05-12
KR20040012688A (en) 2004-02-11
US20040023157A1 (en) 2004-02-05

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