WO2008140119A1 - Method for pattern formation - Google Patents

Method for pattern formation Download PDF

Info

Publication number
WO2008140119A1
WO2008140119A1 PCT/JP2008/058976 JP2008058976W WO2008140119A1 WO 2008140119 A1 WO2008140119 A1 WO 2008140119A1 JP 2008058976 W JP2008058976 W JP 2008058976W WO 2008140119 A1 WO2008140119 A1 WO 2008140119A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
step
form
method
developing solution
Prior art date
Application number
PCT/JP2008/058976
Other languages
French (fr)
Japanese (ja)
Inventor
Hideaki Tsubaki
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2007-129521 priority Critical
Priority to JP2007129521 priority
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Publication of WO2008140119A1 publication Critical patent/WO2008140119A1/en
Priority claimed from US13/162,056 external-priority patent/US8476001B2/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/325Non-aqueous compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Abstract

This invention provides a method for pattern formation that can form a pattern which has rendered the dimension of a trench pattern or a hole pattern effectively fine without producing any scum. The method is characterized by comprising (i) the step of coating a resist composition, which contains a resin capable of increasing its polarity due to the action of an acid and, upon exposure to an actinic radiation or a radiation, undergoes an increase in solubility in a positive-working developing solution and undergoes a decrease in solubility of a negative-working developing solution, (ii) the step of exposure, (iii) the step of conducting development with a negative-working developing solution to form a resist pattern, and (iv) the step of allowing a crosslinked layer forming material to act on the resist pattern to crosslink the resin constituting the resist pattern and the corsslinked layer forming material to form a crosslinked layer.
PCT/JP2008/058976 2007-05-15 2008-05-15 Method for pattern formation WO2008140119A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007-129521 2007-05-15
JP2007129521 2007-05-15

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/600,038 US7985534B2 (en) 2007-05-15 2008-05-15 Pattern forming method
US13/162,056 US8476001B2 (en) 2007-05-15 2011-06-16 Pattern forming method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/162,056 Continuation-In-Part US8476001B2 (en) 2007-05-15 2011-06-16 Pattern forming method

Publications (1)

Publication Number Publication Date
WO2008140119A1 true WO2008140119A1 (en) 2008-11-20

Family

ID=40002306

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058976 WO2008140119A1 (en) 2007-05-15 2008-05-15 Method for pattern formation

Country Status (4)

Country Link
US (1) US7985534B2 (en)
JP (1) JP4558064B2 (en)
KR (1) KR100989567B1 (en)
WO (1) WO2008140119A1 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010061977A3 (en) * 2008-11-27 2010-11-18 Fujifilm Corporation Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method
EP1939691A3 (en) * 2006-12-25 2011-02-16 FUJIFILM Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US7985534B2 (en) 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
US7998655B2 (en) 2007-06-12 2011-08-16 Fujifilm Corporation Method of forming patterns
US8017304B2 (en) 2007-04-13 2011-09-13 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8017298B2 (en) 2007-06-12 2011-09-13 Fujifilm Corporation Method of forming patterns
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US20110311915A1 (en) * 2010-06-17 2011-12-22 Nissan Chemical Industries, Ltd. Photosensitive resist underlayer film forming composition
WO2012032048A2 (en) 2010-09-09 2012-03-15 Fritz Mondl Apparatus for producing electrical energy in flowing waterways
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US9046782B2 (en) 2007-06-12 2015-06-02 Fujifilm Corporation Resist composition for negative tone development and pattern forming method using the same
JP2016091007A (en) * 2014-10-30 2016-05-23 信越化学工業株式会社 Pattern forming method and shrink agent
JP2016091008A (en) * 2014-10-30 2016-05-23 信越化学工業株式会社 Pattern forming method and shrink agent

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100989565B1 (en) * 2007-06-12 2010-10-25 후지필름 가부시키가이샤 Resist composition for negative development and method of forming pattern therewith
JP2010113323A (en) 2008-10-07 2010-05-20 Sanyo Electric Co Ltd Image display device
JP5557550B2 (en) 2009-02-20 2014-07-23 富士フイルム株式会社 The organic solvent-based development or multiple development pattern formation method using an electron beam or euv light
JP5624906B2 (en) * 2010-03-23 2014-11-12 富士フイルム株式会社 The pattern formation method, a chemical amplification type resist composition, and a resist film
US8435728B2 (en) * 2010-03-31 2013-05-07 Tokyo Electron Limited Method of slimming radiation-sensitive material lines in lithographic applications
US8338086B2 (en) * 2010-03-31 2012-12-25 Tokyo Electron Limited Method of slimming radiation-sensitive material lines in lithographic applications
JP5771361B2 (en) 2010-04-22 2015-08-26 富士フイルム株式会社 The pattern formation method, a chemical amplification type resist composition, and a resist film
WO2012023349A1 (en) * 2010-08-18 2012-02-23 Jsr株式会社 Pattern-forming method and radiation-sensitive resin composition
JP5850607B2 (en) 2010-09-28 2016-02-03 富士フイルム株式会社 The pattern formation method, a chemical amplification type resist composition and a resist film
WO2012046581A1 (en) * 2010-10-06 2012-04-12 Jsr株式会社 Pattern forming method and radiation-sensitive resin composition
JP5690703B2 (en) 2010-11-30 2015-03-25 富士フイルム株式会社 Negative pattern forming method and the resist pattern
JPWO2012111450A1 (en) * 2011-02-14 2014-07-03 Jsr株式会社 The photoresist composition and the resist pattern forming method
JP5353943B2 (en) * 2011-04-28 2013-11-27 信越化学工業株式会社 The pattern forming method
JP5830273B2 (en) * 2011-06-10 2015-12-09 東京応化工業株式会社 A resist pattern forming method
JP5664509B2 (en) * 2011-09-16 2015-02-04 信越化学工業株式会社 The pattern forming method
JP5758263B2 (en) * 2011-10-11 2015-08-05 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH Fine resist pattern-forming composition and pattern forming method using the same
US8703395B2 (en) * 2011-10-28 2014-04-22 Jsr Corporation Pattern-forming method
JP5793399B2 (en) * 2011-11-04 2015-10-14 富士フイルム株式会社 Crosslinked layer forming composition used in the pattern forming method and a method thereof
JP5871577B2 (en) * 2011-11-16 2016-03-01 東京応化工業株式会社 A resist pattern forming method
JP5898961B2 (en) * 2011-12-28 2016-04-06 東京応化工業株式会社 A resist pattern forming method
JP5916391B2 (en) * 2012-01-13 2016-05-11 東京応化工業株式会社 Fine pattern forming method, and coating agent for pattern fining
US9261786B2 (en) 2012-04-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of photolithography
US8846295B2 (en) 2012-04-27 2014-09-30 International Business Machines Corporation Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof
US9213234B2 (en) 2012-06-01 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of lithography
JP5965733B2 (en) * 2012-06-12 2016-08-10 富士フイルム株式会社 Pattern forming method, and a method for manufacturing an electronic device
JP5899082B2 (en) * 2012-08-08 2016-04-06 富士フイルム株式会社 Pattern forming method, and a method for manufacturing an electronic device using the same
JP2014240942A (en) * 2012-09-13 2014-12-25 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resist composition, resist film, pattern forming method, method for manufacturing electronic device using the same, and electronic device
JP6075724B2 (en) * 2012-10-01 2017-02-08 アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ Fine resist pattern-forming composition and pattern forming method using the same
JP5829994B2 (en) * 2012-10-01 2015-12-09 信越化学工業株式会社 The pattern forming method
US9012132B2 (en) 2013-01-02 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Coating material and method for photolithography
JP5651718B2 (en) * 2013-01-16 2015-01-14 富士フイルム株式会社 Compounds and resins
US9057960B2 (en) 2013-02-04 2015-06-16 International Business Machines Corporation Resist performance for the negative tone develop organic development process
JP6025600B2 (en) * 2013-02-19 2016-11-16 富士フイルム株式会社 The actinic ray-sensitive or radiation-sensitive resin composition, the actinic ray-sensitive or radiation-sensitive film and a pattern forming method
JP6239833B2 (en) * 2013-02-26 2017-11-29 アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ Fine resist pattern-forming composition and pattern forming method using the same
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9146469B2 (en) 2013-03-14 2015-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Middle layer composition for trilayer patterning stack
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
KR20150135238A (en) * 2013-03-25 2015-12-02 제이에스알 가부시끼가이샤 Inorganic film forming composition for multilayer resist processes, and pattern forming method
JP2014211541A (en) * 2013-04-18 2014-11-13 Jsr株式会社 Method for forming fine pattern
JP6097652B2 (en) 2013-07-31 2017-03-15 富士フイルム株式会社 Pattern forming method, pattern, and etching method using them, and method of manufacturing an electronic device
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
JP6233240B2 (en) * 2013-09-26 2017-11-22 信越化学工業株式会社 The pattern forming method
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
JP6340304B2 (en) * 2013-11-29 2018-06-06 富士フイルム株式会社 Pattern forming method, and a manufacturing method of an electronic device
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
JP6296972B2 (en) * 2014-02-17 2018-03-20 富士フイルム株式会社 The pattern formation method, etching method, and method of manufacturing an electronic device
JP6531397B2 (en) 2014-03-07 2019-06-19 Jsr株式会社 Pattern forming method and composition used therefor
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US9448483B2 (en) 2014-07-31 2016-09-20 Dow Global Technologies Llc Pattern shrink methods
JP6427590B2 (en) * 2014-09-30 2018-11-21 富士フイルム株式会社 Method of manufacturing organic processing liquid for patterning resist film, storage container containing organic processing liquid for patterning resist film, storage method of organic processing liquid for patterning resist film using the same, Pattern forming method and method of manufacturing electronic device
US10216090B2 (en) 2015-03-31 2019-02-26 Jsr Corporation Pattern-forming method and composition for resist pattern-refinement
JP2016210761A (en) * 2015-04-28 2016-12-15 信越化学工業株式会社 Onium salt, resist composition and patterning process
JP2016224282A (en) 2015-05-29 2016-12-28 東京応化工業株式会社 A resist pattern forming method
JP2018124298A (en) * 2015-05-29 2018-08-09 富士フイルム株式会社 Pattern forming method and method for manufacturing electronic device
TWI606099B (en) 2015-06-03 2017-11-21 Rohm & Haas Elect Materials Pattern treatment methods
TWI617900B (en) 2015-06-03 2018-03-11 Rohm & Haas Elect Materials Pattern treatment methods
TWI615460B (en) 2015-06-03 2018-02-21 Rohm & Haas Elect Materials Compositions and methods for pattern treatment
TWI627220B (en) 2015-06-03 2018-06-21 Rohm & Haas Elect Materials Compositions and methods for pattern treatment
US10162265B2 (en) 2015-12-09 2018-12-25 Rohm And Haas Electronic Materials Llc Pattern treatment methods

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000199953A (en) * 1999-01-07 2000-07-18 Toshiba Corp Pattern forming method
JP2003249437A (en) * 2002-02-26 2003-09-05 Sony Corp Pattern forming method and manufacturing method for semiconductor device

Family Cites Families (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099062A (en) * 1976-12-27 1978-07-04 International Business Machines Corporation Electron beam lithography process
US4212935A (en) * 1978-02-24 1980-07-15 International Business Machines Corporation Method of modifying the development profile of photoresists
JPS5820420B2 (en) * 1978-12-15 1983-04-22 Fujitsu Ltd
US4318976A (en) * 1980-10-27 1982-03-09 Texas Instruments Incorporated High gel rigidity, negative electron beam resists
JPS6349893B2 (en) 1981-03-18 1988-10-06 Hitachi Ltd
JPH0546535B2 (en) * 1982-04-28 1993-07-14 Tosoh Corp
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0256031B1 (en) * 1986-01-29 1992-03-04 Hughes Aircraft Company Method for developing poly(methacrylic anhydride) resists
JP2881969B2 (en) 1990-06-05 1999-04-12 富士通株式会社 Radiation sensitive resist and patterning method
ES2101710T3 (en) * 1990-12-20 1997-07-16 Siemens Ag photolithographic process.
DE4120172A1 (en) * 1991-06-19 1992-12-24 Hoechst Ag A radiation-sensitive mixture as a binder unsaturated new polymers having units of amides of (alpha), (beta) contains carboxylic acids
US5268260A (en) * 1991-10-22 1993-12-07 International Business Machines Corporation Photoresist develop and strip solvent compositions and method for their use
US5470693A (en) * 1992-02-18 1995-11-28 International Business Machines Corporation Method of forming patterned polyimide films
JP3057879B2 (en) 1992-02-28 2000-07-04 株式会社日立製作所 A method of manufacturing a semiconductor device
JPH05265212A (en) 1992-03-17 1993-10-15 Fujitsu Ltd Resist material and pattern forming using it
JPH06138666A (en) 1992-10-23 1994-05-20 Nikon Corp Resist developer
JPH06194847A (en) 1992-12-22 1994-07-15 Tokuyama Sekiyu Kagaku Kk Developing liquid for negative type photoresist
JP3009320B2 (en) 1993-12-24 2000-02-14 三菱電機株式会社 Decomposable resin and a photosensitive resin composition
JP2715881B2 (en) 1993-12-28 1998-02-18 日本電気株式会社 The photosensitive resin composition and pattern forming method
US5866304A (en) 1993-12-28 1999-02-02 Nec Corporation Photosensitive resin and method for patterning by use of the same
JPH07220990A (en) 1994-01-28 1995-08-18 Hitachi Ltd Pattern forming method and exposure apparatus therefor
JPH07261392A (en) * 1994-03-17 1995-10-13 Fujitsu Ltd Chemical amplification resist and resist pattern forming method using the same
JP3690847B2 (en) * 1995-09-20 2005-08-31 富士通株式会社 The resist composition and pattern forming method
JP3691897B2 (en) 1996-03-07 2005-09-07 富士通株式会社 Method of forming a resist material and the resist pattern
TW372337B (en) * 1997-03-31 1999-10-21 Mitsubishi Electric Corp Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
JP3071401B2 (en) 1996-07-05 2000-07-31 三菱電機株式会社 Manufacturing method and a semiconductor device of a fine pattern forming material and a semiconductor device using the same
TW329539B (en) * 1996-07-05 1998-04-11 Mitsubishi Electric Corp The semiconductor device and its manufacturing method
US5972570A (en) * 1997-07-17 1999-10-26 International Business Machines Corporation Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby
US6030541A (en) * 1998-06-19 2000-02-29 International Business Machines Corporation Process for defining a pattern using an anti-reflective coating and structure therefor
CN1253759C (en) 1998-09-23 2006-04-26 纳幕尔杜邦公司 Photoresists, polymers and process for microlithography
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
JP2000321789A (en) 1999-03-08 2000-11-24 Somar Corp Processing solution for forming resist pattern and resist pattern forming method
JP3950584B2 (en) * 1999-06-29 2007-08-01 Azエレクトロニックマテリアルズ株式会社 Water-soluble resin composition
JP2001056555A (en) * 1999-08-20 2001-02-27 Tokyo Ohka Kogyo Co Ltd Negative type resist composition and photosensitive material using same
US6338934B1 (en) * 1999-08-26 2002-01-15 International Business Machines Corporation Hybrid resist based on photo acid/photo base blending
JP3444821B2 (en) 1999-10-06 2003-09-08 富士写真フイルム株式会社 Positive photoresist composition
US6221568B1 (en) * 1999-10-20 2001-04-24 International Business Machines Corporation Developers for polychloroacrylate and polychloromethacrylate based resists
JP3351424B2 (en) * 1999-12-28 2002-11-25 日本電気株式会社 Sulfonium salt compound and resist composition and pattern forming method using the same
JP2001215731A (en) 2000-02-01 2001-08-10 Nippon Zeon Co Ltd Resist developer and developing method
EP1340125A2 (en) 2000-11-29 2003-09-03 E.I. Du Pont De Nemours And Company Protecting groups in polymers, photoresists and processes for microlithography
US6509134B2 (en) * 2001-01-26 2003-01-21 International Business Machines Corporation Norbornene fluoroacrylate copolymers and process for the use thereof
JP3660258B2 (en) 2001-03-05 2005-06-15 株式会社半導体先端テクノロジーズ Method for manufacturing a forming method and a semiconductor device of a fine resist pattern and fine pattern
US6660459B2 (en) 2001-03-14 2003-12-09 Advanced Micro Devices, Inc. System and method for developing a photoresist layer with reduced pattern collapse
JP4645789B2 (en) 2001-06-18 2011-03-09 Jsr株式会社 Negative radiation-sensitive resin composition
DE10142590A1 (en) 2001-08-31 2003-04-03 Infineon Technologies Ag Production of resist structures used in semiconductor industry comprises applying a resist film on a substrate, forming a resist structure with bars from the film, and removing reinforced sections
JP2003122024A (en) 2001-10-19 2003-04-25 Matsushita Electric Ind Co Ltd Pattern forming method
JP3822101B2 (en) * 2001-12-26 2006-09-13 株式会社ルネサステクノロジ Method for producing a radiation-sensitive composition and a pattern forming method and a semiconductor device
US7521168B2 (en) 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP3909829B2 (en) 2002-03-18 2007-04-25 富士フイルム株式会社 The positive resist composition
US6946410B2 (en) * 2002-04-05 2005-09-20 E. I. Du Pont De Nemours And Company Method for providing nano-structures of uniform length
JP3850767B2 (en) 2002-07-25 2006-11-29 富士通株式会社 The resist pattern thickening material, the resist pattern and a method for manufacturing the same, and a semiconductor device and a manufacturing method thereof
CN1678646A (en) 2002-07-26 2005-10-05 E·I·内穆尔杜邦公司 Fluorinated polymers, photoresists and processes for microlithography
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7521405B2 (en) 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP2006156422A (en) 2002-12-27 2006-06-15 Nikon Corp Method of forming pattern, method of manufacturing electronic device and electronic device
JP4434762B2 (en) 2003-01-31 2010-03-17 東京応化工業株式会社 Resist composition
CN105541659A (en) * 2003-02-19 2016-05-04 西巴特殊化学品控股有限公司 Halogenated oxime derivatives and their use as potential acid
TWI311236B (en) * 2003-02-20 2009-06-21 Tokyo Ohka Kogyo Co Ltd
US7674847B2 (en) 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
US7090964B2 (en) * 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
EP1598701A4 (en) 2003-02-25 2009-12-09 Tokyo Ohka Kogyo Co Ltd Photoresist composition and method of forming resist pattern
JP4360957B2 (en) 2003-03-27 2009-11-11 富士フイルム株式会社 The positive resist composition and pattern forming method using the same
US7016754B2 (en) * 2003-05-08 2006-03-21 Onwafer Technologies, Inc. Methods of and apparatus for controlling process profiles
US20040242798A1 (en) 2003-05-08 2004-12-02 Sounik James R. Photoresist compositions and processes for preparing the same
CN100549051C (en) 2003-06-26 2009-10-14 捷时雅株式会社 Photoresist polymer compositions
JP4533639B2 (en) 2003-07-22 2010-09-01 富士フイルム株式会社 Sensitive stimulatory composition, a pattern forming method using the compounds and sensitive irritant composition
JP4265766B2 (en) 2003-08-25 2009-05-20 東京応化工業株式会社 Liquid immersion lithography resist protective film forming material, a method of forming a resist pattern using the resist protective film, and the resist protective film made of the protective film forming material
TWI366067B (en) 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
JP3993549B2 (en) 2003-09-30 2007-10-17 株式会社東芝 A resist pattern forming method
US20050170277A1 (en) 2003-10-20 2005-08-04 Luke Zannoni Fluorinated photoresists prepared, deposited, developed and removed in carbon dioxide
US7449573B2 (en) 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
US7119025B2 (en) * 2004-04-08 2006-10-10 Micron Technology, Inc. Methods of eliminating pattern collapse on photoresist patterns
JP4355944B2 (en) * 2004-04-16 2009-11-04 信越化学工業株式会社 Pattern forming method and a resist upper layer film material used in this
US7781141B2 (en) 2004-07-02 2010-08-24 Rohm And Haas Electronic Materials Llc Compositions and processes for immersion lithography
EP1621927B1 (en) * 2004-07-07 2018-05-23 FUJIFILM Corporation Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4697406B2 (en) * 2004-08-05 2011-06-08 セントラル硝子株式会社 Polymeric compound, a resist protective film material and a pattern formation method
US7129016B2 (en) 2004-11-12 2006-10-31 International Business Machines Corporation Positive resist containing naphthol functionality
DE602005011184D1 (en) 2004-11-25 2009-01-02 Nxp Bv lithographic process
JP2006227174A (en) 2005-02-16 2006-08-31 Ricoh Co Ltd Resist developing solution and pattern forming method
US7960087B2 (en) 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
US7981595B2 (en) 2005-03-23 2011-07-19 Asml Netherlands B.V. Reduced pitch multiple exposure process
EP1720072B1 (en) 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
US7205093B2 (en) * 2005-06-03 2007-04-17 International Business Machines Corporation Topcoats for use in immersion lithography
JP2007025240A (en) 2005-07-15 2007-02-01 Fujifilm Corp Positive resist composition and method for forming pattern using the positive resist composition
JP4871549B2 (en) 2005-08-29 2012-02-08 富士フイルム株式会社 The positive resist composition and pattern forming method using the same
KR100688570B1 (en) * 2005-08-31 2007-02-22 삼성전자주식회사 Coating composition for forming etch mask pattern and method of forming fine pattern for semiconductor device
JP2007071978A (en) 2005-09-05 2007-03-22 Fujifilm Corp Positive photosensitive composition and pattern forming method using the same
TWI403843B (en) 2005-09-13 2013-08-01 Fujifilm Corp Positive resist composition and pattern-forming method using the same
WO2007037213A1 (en) 2005-09-28 2007-04-05 Daicel Chemical Industries, Ltd. Cyano-containing polycyclic esters having lactone skeletons
TW200728330A (en) 2005-09-29 2007-08-01 Jsr Corp Radiation sensitive resin composition for optical waveguides, optical waveguide and method for manufacturing optical waveguide
JP2007108581A (en) 2005-10-17 2007-04-26 Fujifilm Corp Positive photosensitive composition and pattern forming method using the same
US7396482B2 (en) * 2005-10-28 2008-07-08 Infineon Technologies Ag Post exposure resist bake
JP4810401B2 (en) 2005-11-08 2011-11-09 富士フイルム株式会社 A pattern forming method using the positive resist composition and the positive resist composition
TWI430030B (en) 2005-11-08 2014-03-11 Fujifilm Corp Positive resist composition and pattern formation method using the positive resist composition
JP2007140188A (en) 2005-11-18 2007-06-07 Fujifilm Corp Positive photosensitive composition and pattern forming method using the same
JP5114021B2 (en) * 2006-01-23 2013-01-09 富士フイルム株式会社 The pattern forming method
JP5151038B2 (en) * 2006-02-16 2013-02-27 富士通株式会社 Resist cover film-forming material, a resist pattern formation method, semiconductor device and a manufacturing method thereof
US7521172B2 (en) 2006-04-28 2009-04-21 International Business Machines Corporation Topcoat material and use thereof in immersion lithography processes
JP4895030B2 (en) * 2006-10-04 2012-03-14 信越化学工業株式会社 Polymeric compound, a resist protective film material, and a pattern forming method
US7771914B2 (en) * 2006-10-17 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (en) 2006-12-25 2010-09-29 富士フイルム株式会社 The pattern formation method, for multiple development used in the pattern forming method The positive resist composition, the pattern negative development for developer used in the forming method and the pattern forming negative development rinse solution used in the method
JP4562784B2 (en) 2007-04-13 2010-10-13 富士フイルム株式会社 Pattern forming method, the resist composition used in the pattern forming method, a developing solution and rinsing solution
EP1980911A3 (en) 2007-04-13 2009-06-24 FUJIFILM Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US7985534B2 (en) 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
JP4590431B2 (en) 2007-06-12 2010-12-01 富士フイルム株式会社 The pattern forming method
KR100989565B1 (en) * 2007-06-12 2010-10-25 후지필름 가부시키가이샤 Resist composition for negative development and method of forming pattern therewith
KR101457927B1 (en) 2007-06-12 2014-11-07 후지필름 가부시키가이샤 Resist composition for negative tone development and pattern forming method using the same
JP4617337B2 (en) 2007-06-12 2011-01-26 富士フイルム株式会社 The pattern forming method
US20080311530A1 (en) 2007-06-15 2008-12-18 Allen Robert D Graded topcoat materials for immersion lithography
US7926363B2 (en) 2008-01-17 2011-04-19 Tensegrity Technologies, Inc. Systems for designing a foot orthotic

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000199953A (en) * 1999-01-07 2000-07-18 Toshiba Corp Pattern forming method
JP2003249437A (en) * 2002-02-26 2003-09-05 Sony Corp Pattern forming method and manufacturing method for semiconductor device

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8227183B2 (en) 2006-12-25 2012-07-24 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
EP1939691A3 (en) * 2006-12-25 2011-02-16 FUJIFILM Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US9291904B2 (en) 2006-12-25 2016-03-22 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8951718B2 (en) 2006-12-25 2015-02-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
EP2637062A3 (en) * 2006-12-25 2013-11-20 Fujifilm Corporation Pattern forming method
EP2637063A3 (en) * 2006-12-25 2013-11-13 Fujifilm Corporation Pattern forming method
EP2637063A2 (en) * 2006-12-25 2013-09-11 Fujifilm Corporation Pattern forming method
EP2637062A2 (en) * 2006-12-25 2013-09-11 Fujifilm Corporation Pattern forming method
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
EP2413195A3 (en) * 2006-12-25 2012-02-08 Fujifilm Corporation Pattern forming method
EP2413194A3 (en) * 2006-12-25 2012-02-08 Fujifilm Corporation Pattern forming method
US9465298B2 (en) 2006-12-25 2016-10-11 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8241840B2 (en) 2007-04-13 2012-08-14 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8017304B2 (en) 2007-04-13 2011-09-13 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
US7985534B2 (en) 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
US8017298B2 (en) 2007-06-12 2011-09-13 Fujifilm Corporation Method of forming patterns
US8071272B2 (en) 2007-06-12 2011-12-06 Fujifilm Corporation Method of forming patterns
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
US9458343B2 (en) 2007-06-12 2016-10-04 Fujifilm Corporation Method of forming patterns
US8088557B2 (en) 2007-06-12 2012-01-03 Fujifilm Corporation Method of forming patterns
US9046782B2 (en) 2007-06-12 2015-06-02 Fujifilm Corporation Resist composition for negative tone development and pattern forming method using the same
US7998655B2 (en) 2007-06-12 2011-08-16 Fujifilm Corporation Method of forming patterns
US8852847B2 (en) 2007-06-12 2014-10-07 Fujifilm Corporation Method of forming patterns
US8895225B2 (en) 2007-06-12 2014-11-25 Fujifilm Corporation Method of forming patterns
US9176386B2 (en) 2007-06-12 2015-11-03 Fujifilm Corporation Method of forming patterns
US8709704B2 (en) 2008-11-27 2014-04-29 Fujifilm Corporation Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method
WO2010061977A3 (en) * 2008-11-27 2010-11-18 Fujifilm Corporation Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method
KR101536597B1 (en) * 2008-11-27 2015-07-14 후지필름 가부시키가이샤 Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method
US8685615B2 (en) * 2010-06-17 2014-04-01 Nissan Chemical Industries, Ltd. Photosensitive resist underlayer film forming composition
US20110311915A1 (en) * 2010-06-17 2011-12-22 Nissan Chemical Industries, Ltd. Photosensitive resist underlayer film forming composition
WO2012032048A2 (en) 2010-09-09 2012-03-15 Fritz Mondl Apparatus for producing electrical energy in flowing waterways
JP2016091008A (en) * 2014-10-30 2016-05-23 信越化学工業株式会社 Pattern forming method and shrink agent
JP2016091007A (en) * 2014-10-30 2016-05-23 信越化学工業株式会社 Pattern forming method and shrink agent

Also Published As

Publication number Publication date
KR100989567B1 (en) 2010-10-25
US20100239984A1 (en) 2010-09-23
KR20100019438A (en) 2010-02-18
US7985534B2 (en) 2011-07-26
JP2008310314A (en) 2008-12-25
JP4558064B2 (en) 2010-10-06

Similar Documents

Publication Publication Date Title
TWI247339B (en) Lithographic printing with polarized light
TWI282908B (en) Pattern forming method and material for forming underlayer film
EP1916568A3 (en) Developing solution for lithographic printing plates and production method of lithographic printing plate
TW200905393A (en) Positively radiation-sensitive composition and process for producing resist pattern using the same
WO2006052738A3 (en) A method and process for design of integrated circuits using regular geometry patterns to obtain geometrically consistent component features
TWI283430B (en) Method for forming resist pattern and method for manufacturing semiconductor device
US8067146B2 (en) Method for forming a fine pattern in a semicondutor device
TW200702928A (en) Composition for underlayer film of resist and process for producing the same
TW200809921A (en) Method of lithography patterning
SG141386A1 (en) Method and apparatus for performing model-based opc for pattern decomposed features
TW200907576A (en) Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
TW200939920A (en) Process for producing electro-conductive patterns
EP1275508A3 (en) Method for manufacturing microstructure, method for manufacturing liquid discharge head, and liquid discharge head
TW200702902A (en) A method, program product and apparatus for performing double exposure lithography
TW200931200A (en) Methods and system for lithography process window simulation
TW200606179A (en) Material for forming resist protection film for liquid immersion lithography and method for forming resist pattern by using the protection film
EP1688791A3 (en) Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition
TW201322314A (en) Method for forming conductive pattern, conductive pattern substrate, and touch panel sensor
TW201013332A (en) Double patterning method
TW200426501A (en) Method of formation of photoresist patterns utilizing water-soluble negative-tone photoresist
TW201041035A (en) Integrated circuit structure
TW200700924A (en) A process of imaging a photoresist with multiple antireflective coatings
EP1598704A3 (en) Pattern forming method
TWI254194B (en) The aqueous solution of surfactant for developing the coating layer
TW201115276A (en) Patterning process and resist composition

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08764301

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase in:

Ref document number: 20097023570

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12600038

Country of ref document: US

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08764301

Country of ref document: EP

Kind code of ref document: A1