WO2008140119A1 - Method for pattern formation - Google Patents

Method for pattern formation Download PDF

Info

Publication number
WO2008140119A1
WO2008140119A1 PCT/JP2008/058976 JP2008058976W WO2008140119A1 WO 2008140119 A1 WO2008140119 A1 WO 2008140119A1 JP 2008058976 W JP2008058976 W JP 2008058976W WO 2008140119 A1 WO2008140119 A1 WO 2008140119A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
developing solution
undergoes
solubility
resist pattern
Prior art date
Application number
PCT/JP2008/058976
Other languages
French (fr)
Japanese (ja)
Inventor
Hideaki Tsubaki
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Priority to US12/600,038 priority Critical patent/US7985534B2/en
Publication of WO2008140119A1 publication Critical patent/WO2008140119A1/en
Priority to US13/162,056 priority patent/US8476001B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

This invention provides a method for pattern formation that can form a pattern which has rendered the dimension of a trench pattern or a hole pattern effectively fine without producing any scum. The method is characterized by comprising (i) the step of coating a resist composition, which contains a resin capable of increasing its polarity due to the action of an acid and, upon exposure to an actinic radiation or a radiation, undergoes an increase in solubility in a positive-working developing solution and undergoes a decrease in solubility of a negative-working developing solution, (ii) the step of exposure, (iii) the step of conducting development with a negative-working developing solution to form a resist pattern, and (iv) the step of allowing a crosslinked layer forming material to act on the resist pattern to crosslink the resin constituting the resist pattern and the corsslinked layer forming material to form a crosslinked layer.
PCT/JP2008/058976 2007-05-15 2008-05-15 Method for pattern formation WO2008140119A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/600,038 US7985534B2 (en) 2007-05-15 2008-05-15 Pattern forming method
US13/162,056 US8476001B2 (en) 2007-05-15 2011-06-16 Pattern forming method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007129521 2007-05-15
JP2007-129521 2007-05-15

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/600,038 A-371-Of-International US7985534B2 (en) 2007-05-15 2008-05-15 Pattern forming method
US13/162,056 Continuation-In-Part US8476001B2 (en) 2007-05-15 2011-06-16 Pattern forming method

Publications (1)

Publication Number Publication Date
WO2008140119A1 true WO2008140119A1 (en) 2008-11-20

Family

ID=40002306

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058976 WO2008140119A1 (en) 2007-05-15 2008-05-15 Method for pattern formation

Country Status (4)

Country Link
US (1) US7985534B2 (en)
JP (1) JP4558064B2 (en)
KR (1) KR100989567B1 (en)
WO (1) WO2008140119A1 (en)

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WO2010061977A3 (en) * 2008-11-27 2010-11-18 Fujifilm Corporation Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method
EP1939691A3 (en) * 2006-12-25 2011-02-16 FUJIFILM Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US7985534B2 (en) 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
US7998655B2 (en) 2007-06-12 2011-08-16 Fujifilm Corporation Method of forming patterns
US8017298B2 (en) 2007-06-12 2011-09-13 Fujifilm Corporation Method of forming patterns
US8017304B2 (en) 2007-04-13 2011-09-13 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US20110311915A1 (en) * 2010-06-17 2011-12-22 Nissan Chemical Industries, Ltd. Photosensitive resist underlayer film forming composition
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US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US9046782B2 (en) 2007-06-12 2015-06-02 Fujifilm Corporation Resist composition for negative tone development and pattern forming method using the same
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