Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands

Landscapes

• Engineering & Computer Science (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Recrystallisation Techniques (AREA)
• Element Separation (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Crystals, And After-Treatments Of Crystals (AREA)
• Formation Of Insulating Films (AREA)
• Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
• Bipolar Transistors (AREA)
• Pressure Sensors (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
• Glass Compositions (AREA)
• Weting (AREA)

Applications Claiming Priority (2)

Publications (2)

Family

ID=16525210

Family Applications (2)

Family Applications After (1)

Country Status (10)

Families Citing this family (354)

Family Cites Families (12)

• 1991
  • 1991-08-02 KR KR1019910013439A patent/KR950014609B1/ko not_active IP Right Cessation
  • 1991-08-02 DE DE69133359T patent/DE69133359T2/de not_active Expired - Fee Related
  • 1991-08-02 CA CA002048339A patent/CA2048339C/en not_active Expired - Fee Related
  • 1991-08-02 EP EP95113701A patent/EP0688048A3/de not_active Ceased
  • 1991-08-02 SG SG1996006279A patent/SG59963A1/en unknown
  • 1991-08-02 EP EP91113048A patent/EP0469630B1/de not_active Expired - Lifetime
  • 1991-08-02 AT AT91113048T patent/ATE217447T1/de not_active IP Right Cessation
  • 1991-08-02 AT AT96114975T patent/ATE259098T1/de not_active IP Right Cessation
  • 1991-08-02 DE DE69133004T patent/DE69133004T2/de not_active Expired - Lifetime
  • 1991-08-02 EP EP96114975A patent/EP0747935B1/de not_active Expired - Lifetime
  • 1991-08-03 CN CN91108569.6A patent/CN1056940C/zh not_active Expired - Fee Related
  • 1991-08-03 MY MYPI91001403A patent/MY141499A/en unknown
  • 1991-08-05 US US07/740,439 patent/US5371037A/en not_active Expired - Lifetime
  • 1991-08-06 TW TW080106208A patent/TW334578B/zh active
• 1996
  • 1996-12-13 US US08/766,888 patent/US6150031A/en not_active Expired - Fee Related

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