DE69825928D1 - Verfahren und Herstellung einer dünnen Schicht - Google Patents
Verfahren und Herstellung einer dünnen SchichtInfo
- Publication number
- DE69825928D1 DE69825928D1 DE69825928T DE69825928T DE69825928D1 DE 69825928 D1 DE69825928 D1 DE 69825928D1 DE 69825928 T DE69825928 T DE 69825928T DE 69825928 T DE69825928 T DE 69825928T DE 69825928 D1 DE69825928 D1 DE 69825928D1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- porous
- substrate
- separated
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7369197 | 1997-03-26 | ||
JP7369197 | 1997-03-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69825928D1 true DE69825928D1 (de) | 2004-10-07 |
DE69825928T2 DE69825928T2 (de) | 2005-09-08 |
Family
ID=13525505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69825928T Expired - Lifetime DE69825928T2 (de) | 1997-03-26 | 1998-03-24 | Verfahren und Herstellung einer dünnen Schicht |
Country Status (10)
Country | Link |
---|---|
US (2) | US6133112A (de) |
EP (1) | EP0867920B1 (de) |
KR (1) | KR100345354B1 (de) |
CN (1) | CN1112721C (de) |
AT (1) | ATE275288T1 (de) |
AU (1) | AU731697B2 (de) |
CA (1) | CA2233028C (de) |
DE (1) | DE69825928T2 (de) |
SG (1) | SG71094A1 (de) |
TW (1) | TW398038B (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7148119B1 (en) * | 1994-03-10 | 2006-12-12 | Canon Kabushiki Kaisha | Process for production of semiconductor substrate |
SG70141A1 (en) | 1997-12-26 | 2000-01-25 | Canon Kk | Sample separating apparatus and method and substrate manufacturing method |
JP3500063B2 (ja) * | 1998-04-23 | 2004-02-23 | 信越半導体株式会社 | 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ |
TW484184B (en) * | 1998-11-06 | 2002-04-21 | Canon Kk | Sample separating apparatus and method, and substrate manufacturing method |
JP4313874B2 (ja) * | 1999-02-02 | 2009-08-12 | キヤノン株式会社 | 基板の製造方法 |
US6602767B2 (en) | 2000-01-27 | 2003-08-05 | Canon Kabushiki Kaisha | Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery |
JP3982218B2 (ja) * | 2001-02-07 | 2007-09-26 | ソニー株式会社 | 半導体装置およびその製造方法 |
DE102004060363B4 (de) * | 2004-12-15 | 2010-12-16 | Austriamicrosystems Ag | Halbleitersubstrat mit pn-Übergang und Verfahren zur Herstellung |
US7429521B2 (en) * | 2006-03-30 | 2008-09-30 | Intel Corporation | Capillary underfill of stacked wafers |
DE102007021991B4 (de) * | 2007-05-10 | 2015-03-26 | Infineon Technologies Austria Ag | Verfahren zum Herstellen eines Halbleiterbauelements durch Ausbilden einer porösen Zwischenschicht |
US9409383B2 (en) * | 2008-12-22 | 2016-08-09 | Apple Inc. | Layer-specific energy distribution delamination |
US8242591B2 (en) | 2009-08-13 | 2012-08-14 | International Business Machines Corporation | Electrostatic chucking of an insulator handle substrate |
DE102009053262A1 (de) * | 2009-11-13 | 2011-05-19 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Bilden von dünnen Halbleiterschichtsubstraten sowie Verfahren zum Herstellen eines Halbleiterbauelements, insbesondere einer Solarzelle, mit einem solchen Halbleiterschichtsubstrat |
US8945344B2 (en) * | 2012-07-20 | 2015-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods of separating bonded wafers |
US9721896B2 (en) * | 2015-09-11 | 2017-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnection structure, fabricating method thereof, and semiconductor device using the same |
WO2017223296A1 (en) * | 2016-06-24 | 2017-12-28 | Crystal Solar Inc. | Semiconductor layer separation from single crystal silicon substrate by infrared irradiation of porous silicon separation layer |
DE102019114328B4 (de) * | 2018-05-31 | 2022-03-03 | Rohm Co. Ltd | Halbleitersubstratstruktur und leistungshalbleitervorrichtung |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE143981C (de) * | ||||
US4237150A (en) * | 1979-04-18 | 1980-12-02 | The United States Of America As Represented By The United States Department Of Energy | Method of producing hydrogenated amorphous silicon film |
US4392011A (en) * | 1980-04-30 | 1983-07-05 | Rca Corporation | Solar cell structure incorporating a novel single crystal silicon material |
DE69006353T2 (de) * | 1990-05-25 | 1994-06-23 | Ibm | Verfahren und Vorrichtung zum Spalten von Halbleiterplatten und Bekleiden der gespalteten Facetten. |
KR950014609B1 (ko) * | 1990-08-03 | 1995-12-11 | 캐논 가부시끼가이샤 | 반도체부재 및 반도체부재의 제조방법 |
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5371564A (en) * | 1992-03-09 | 1994-12-06 | Nikon Corporation | Shutter device in a camera |
TW330313B (en) * | 1993-12-28 | 1998-04-21 | Canon Kk | A semiconductor substrate and process for producing same |
FR2715501B1 (fr) * | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Procédé de dépôt de lames semiconductrices sur un support. |
JP3352340B2 (ja) | 1995-10-06 | 2002-12-03 | キヤノン株式会社 | 半導体基体とその製造方法 |
JP3257580B2 (ja) * | 1994-03-10 | 2002-02-18 | キヤノン株式会社 | 半導体基板の作製方法 |
FR2725074B1 (fr) | 1994-09-22 | 1996-12-20 | Commissariat Energie Atomique | Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat |
JP2689935B2 (ja) * | 1995-02-01 | 1997-12-10 | 日本電気株式会社 | 半導体薄膜形成方法 |
JP3381443B2 (ja) * | 1995-02-02 | 2003-02-24 | ソニー株式会社 | 基体から半導体層を分離する方法、半導体素子の製造方法およびsoi基板の製造方法 |
US6103598A (en) * | 1995-07-13 | 2000-08-15 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate |
JPH0929472A (ja) * | 1995-07-14 | 1997-02-04 | Hitachi Ltd | 割断方法、割断装置及びチップ材料 |
US5893747A (en) * | 1995-10-07 | 1999-04-13 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a polysilicon film of a semiconductor device |
JPH11503880A (ja) * | 1996-02-09 | 1999-03-30 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体材料のウエファに形成された半導体素子のレーザ分割方法 |
FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
SG55413A1 (en) | 1996-11-15 | 1998-12-21 | Method Of Manufacturing Semico | Method of manufacturing semiconductor article |
US6054363A (en) | 1996-11-15 | 2000-04-25 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor article |
SG65697A1 (en) | 1996-11-15 | 1999-06-22 | Canon Kk | Process for producing semiconductor article |
CA2220600C (en) * | 1996-11-15 | 2002-02-12 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor article |
ATE261612T1 (de) | 1996-12-18 | 2004-03-15 | Canon Kk | Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht |
US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US6013563A (en) | 1997-05-12 | 2000-01-11 | Silicon Genesis Corporation | Controlled cleaning process |
-
1998
- 1998-03-18 SG SG1998000572A patent/SG71094A1/en unknown
- 1998-03-19 TW TW087104097A patent/TW398038B/zh not_active IP Right Cessation
- 1998-03-23 CA CA002233028A patent/CA2233028C/en not_active Expired - Fee Related
- 1998-03-23 KR KR1019980009926A patent/KR100345354B1/ko not_active IP Right Cessation
- 1998-03-24 DE DE69825928T patent/DE69825928T2/de not_active Expired - Lifetime
- 1998-03-24 EP EP98302209A patent/EP0867920B1/de not_active Expired - Lifetime
- 1998-03-24 AT AT98302209T patent/ATE275288T1/de not_active IP Right Cessation
- 1998-03-25 US US09/047,336 patent/US6133112A/en not_active Expired - Lifetime
- 1998-03-25 AU AU59519/98A patent/AU731697B2/en not_active Ceased
- 1998-03-26 CN CN98105130A patent/CN1112721C/zh not_active Expired - Fee Related
-
2000
- 2000-08-09 US US09/635,246 patent/US6534383B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ATE275288T1 (de) | 2004-09-15 |
EP0867920A3 (de) | 1999-06-16 |
US6534383B1 (en) | 2003-03-18 |
AU5951998A (en) | 1998-10-01 |
CN1195880A (zh) | 1998-10-14 |
CN1112721C (zh) | 2003-06-25 |
TW398038B (en) | 2000-07-11 |
US6133112A (en) | 2000-10-17 |
SG71094A1 (en) | 2000-03-21 |
KR19980080550A (ko) | 1998-11-25 |
CA2233028C (en) | 2002-08-20 |
EP0867920B1 (de) | 2004-09-01 |
KR100345354B1 (ko) | 2002-09-18 |
EP0867920A2 (de) | 1998-09-30 |
DE69825928T2 (de) | 2005-09-08 |
AU731697B2 (en) | 2001-04-05 |
CA2233028A1 (en) | 1998-09-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |