ATE549744T1 - Verfahren zur herstellung einer halbleiterschicht auf ein substrat - Google Patents

Verfahren zur herstellung einer halbleiterschicht auf ein substrat

Info

Publication number
ATE549744T1
ATE549744T1 AT01870282T AT01870282T ATE549744T1 AT E549744 T1 ATE549744 T1 AT E549744T1 AT 01870282 T AT01870282 T AT 01870282T AT 01870282 T AT01870282 T AT 01870282T AT E549744 T1 ATE549744 T1 AT E549744T1
Authority
AT
Austria
Prior art keywords
substrate
producing
semiconductor
layer
semiconductor layer
Prior art date
Application number
AT01870282T
Other languages
English (en)
Inventor
Jef Poortmans
Giovanni Flamand
Renat Bilyalov
Original Assignee
Imec
Umicore Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec, Umicore Nv filed Critical Imec
Application granted granted Critical
Publication of ATE549744T1 publication Critical patent/ATE549744T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
AT01870282T 2000-12-21 2001-12-19 Verfahren zur herstellung einer halbleiterschicht auf ein substrat ATE549744T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00870312A EP1217663A1 (de) 2000-12-21 2000-12-21 Herstellungsverfahren einer Halbleiterschicht auf einem Substrat

Publications (1)

Publication Number Publication Date
ATE549744T1 true ATE549744T1 (de) 2012-03-15

Family

ID=8175883

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01870282T ATE549744T1 (de) 2000-12-21 2001-12-19 Verfahren zur herstellung einer halbleiterschicht auf ein substrat

Country Status (2)

Country Link
EP (1) EP1217663A1 (de)
AT (1) ATE549744T1 (de)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW211621B (de) * 1991-07-31 1993-08-21 Canon Kk
JPH05218464A (ja) * 1992-01-31 1993-08-27 Canon Inc 半導体基体と太陽電池の製造方法及びこれらの方法により得られた半導体基体と太陽電池
EP0553856B1 (de) * 1992-01-31 2002-04-17 Canon Kabushiki Kaisha Verfahren zur Herstellung eines Halbleitersubstrats
CN1132223C (zh) * 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
EP0797258B1 (de) * 1996-03-18 2011-07-20 Sony Corporation Herstellungsverfahren von Dünnschichthalbleitern, Solarzellen und lichtemittierenden Dioden
DE19851873A1 (de) * 1998-11-10 2000-05-11 Zae Bayern Verfahren zum Aufwachsen einer kristallinen Struktur

Also Published As

Publication number Publication date
EP1217663A1 (de) 2002-06-26

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