DE69728950D1 - Verfahren zur Herstellung eines Halbleitergegenstands - Google Patents

Verfahren zur Herstellung eines Halbleitergegenstands

Info

Publication number
DE69728950D1
DE69728950D1 DE69728950T DE69728950T DE69728950D1 DE 69728950 D1 DE69728950 D1 DE 69728950D1 DE 69728950 T DE69728950 T DE 69728950T DE 69728950 T DE69728950 T DE 69728950T DE 69728950 D1 DE69728950 D1 DE 69728950D1
Authority
DE
Germany
Prior art keywords
substrate
porous silicon
manufacturing
silicon layer
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69728950T
Other languages
English (en)
Other versions
DE69728950T2 (de
Inventor
Kiyofumi Sakaguchi
Takao Yonehara
Tadashi Atoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69728950D1 publication Critical patent/DE69728950D1/de
Application granted granted Critical
Publication of DE69728950T2 publication Critical patent/DE69728950T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
DE69728950T 1996-11-15 1997-11-14 Verfahren zur Herstellung eines Halbleitergegenstands Expired - Fee Related DE69728950T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30453996 1996-11-15
JP30453996 1996-11-15

Publications (2)

Publication Number Publication Date
DE69728950D1 true DE69728950D1 (de) 2004-06-09
DE69728950T2 DE69728950T2 (de) 2005-03-31

Family

ID=17934226

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69728950T Expired - Fee Related DE69728950T2 (de) 1996-11-15 1997-11-14 Verfahren zur Herstellung eines Halbleitergegenstands

Country Status (10)

Country Link
EP (1) EP0843346B1 (de)
KR (1) KR100279756B1 (de)
CN (1) CN1104036C (de)
AT (1) ATE266258T1 (de)
AU (1) AU745315B2 (de)
CA (1) CA2220600C (de)
DE (1) DE69728950T2 (de)
MY (1) MY114469A (de)
SG (1) SG54593A1 (de)
TW (1) TW372366B (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG71094A1 (en) * 1997-03-26 2000-03-21 Canon Kk Thin film formation using laser beam heating to separate layers
EP0867919B1 (de) * 1997-03-26 2004-09-08 Canon Kabushiki Kaisha Halbleitersubstrat und Verfahren zu dessen Herstellung
JP3492142B2 (ja) * 1997-03-27 2004-02-03 キヤノン株式会社 半導体基材の製造方法
TW522488B (en) 1998-07-27 2003-03-01 Canon Kk Sample processing apparatus and method
JP2000349264A (ja) * 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
EP1039513A3 (de) * 1999-03-26 2008-11-26 Canon Kabushiki Kaisha Verfahren zur Herstellung einer SOI-Scheibe
DE19940512A1 (de) * 1999-08-26 2001-03-22 Bosch Gmbh Robert Verfahren zur Verkappung eines Bauelementes mit einer Kavernenstruktur und Verfahren zur Herstellung der Kavernenstruktur
CN1119830C (zh) * 2000-04-27 2003-08-27 中国科学院上海冶金研究所 一种器件转移方法
US6420243B1 (en) * 2000-12-04 2002-07-16 Motorola, Inc. Method for producing SOI wafers by delamination
KR20040007852A (ko) * 2002-07-11 2004-01-28 (주)두진리사이클 백업보드의 금속막 박리방법 및 이를 수행하는 장치
EP1482548B1 (de) * 2003-05-26 2016-04-13 Soitec Verfahren zur Herstellung von Halbleiterscheiben
JP4348454B2 (ja) * 2007-11-08 2009-10-21 三菱重工業株式会社 デバイスおよびデバイス製造方法
TW201133945A (en) * 2010-01-12 2011-10-01 jian-min Song Diamond LED devices and associated methods
CN101789466B (zh) * 2010-02-10 2011-12-07 上海理工大学 太阳能电池制作方法
FR2984007B1 (fr) 2011-12-13 2015-05-08 Soitec Silicon On Insulator Procede de stabilisation d'une interface de collage situee au sein d'une structure comprenant une couche d'oxyde enterree et structure obtenue
FR2984597B1 (fr) * 2011-12-20 2016-07-29 Commissariat Energie Atomique Fabrication d’une structure souple par transfert de couches
AU2013222069A1 (en) 2012-02-26 2014-10-16 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
CN106992140A (zh) * 2016-01-20 2017-07-28 沈阳硅基科技有限公司 一种采用激光裂片技术制备soi硅片的方法
US20180068886A1 (en) * 2016-09-02 2018-03-08 Qualcomm Incorporated Porous semiconductor layer transfer for an integrated circuit structure
JP6834932B2 (ja) * 2017-12-19 2021-02-24 株式会社Sumco 貼り合わせウェーハ用の支持基板の製造方法および貼り合わせウェーハの製造方法
FR3079532B1 (fr) * 2018-03-28 2022-03-25 Soitec Silicon On Insulator Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain
CN109904065B (zh) * 2019-02-21 2021-05-11 中国科学院上海微系统与信息技术研究所 异质结构的制备方法
GB202213149D0 (en) * 2022-09-08 2022-10-26 Poro Tech Ltd Method of separating a semiconductor device from a substrate
CN117690943A (zh) * 2024-01-31 2024-03-12 合肥晶合集成电路股份有限公司 一种图像传感器的制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH032889A (ja) * 1989-05-31 1991-01-09 Seikosha Co Ltd 表示装置
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3257580B2 (ja) * 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
JP3293736B2 (ja) * 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体

Also Published As

Publication number Publication date
AU4517497A (en) 1998-05-21
SG54593A1 (en) 1998-11-16
CN1104036C (zh) 2003-03-26
KR100279756B1 (ko) 2001-03-02
EP0843346B1 (de) 2004-05-06
CA2220600A1 (en) 1998-05-15
TW372366B (en) 1999-10-21
CN1191383A (zh) 1998-08-26
EP0843346A2 (de) 1998-05-20
MY114469A (en) 2002-10-31
AU745315B2 (en) 2002-03-21
EP0843346A3 (de) 1998-07-08
CA2220600C (en) 2002-02-12
ATE266258T1 (de) 2004-05-15
DE69728950T2 (de) 2005-03-31
KR19980042472A (ko) 1998-08-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee