FR2839199B1 - Procede de fabrication de substrats avec detachement d'un support temporaire, et substrat associe - Google Patents
Procede de fabrication de substrats avec detachement d'un support temporaire, et substrat associeInfo
- Publication number
- FR2839199B1 FR2839199B1 FR0205423A FR0205423A FR2839199B1 FR 2839199 B1 FR2839199 B1 FR 2839199B1 FR 0205423 A FR0205423 A FR 0205423A FR 0205423 A FR0205423 A FR 0205423A FR 2839199 B1 FR2839199 B1 FR 2839199B1
- Authority
- FR
- France
- Prior art keywords
- detachment
- temporary support
- associated substrate
- manufacturing substrates
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Micromachines (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laminated Bodies (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0205423A FR2839199B1 (fr) | 2002-04-30 | 2002-04-30 | Procede de fabrication de substrats avec detachement d'un support temporaire, et substrat associe |
PCT/IB2003/002431 WO2003094224A1 (fr) | 2002-04-30 | 2003-04-30 | Procede de production de substrats par detachement d'un support temporaire et substrat correspondant |
KR1020047017490A KR100917941B1 (ko) | 2002-04-30 | 2003-04-30 | 임시 지지부가 분리되는 기판의 제조 공정 및 관련 기판 |
EP03747530A EP1502298A1 (fr) | 2002-04-30 | 2003-04-30 | Procede de production de substrats par detachement d'un support temporaire et substrat correspondant |
JP2004502345A JP4854958B2 (ja) | 2002-04-30 | 2003-04-30 | 仮支持部材除去を伴う基板の製造方法並びにそのための基板 |
AU2003232414A AU2003232414A1 (en) | 2002-04-30 | 2003-04-30 | Process for manufacturing substrates with detachment of a temporary support, and associated substrate |
US10/972,158 US7041577B2 (en) | 2002-04-30 | 2004-10-22 | Process for manufacturing a substrate and associated substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0205423A FR2839199B1 (fr) | 2002-04-30 | 2002-04-30 | Procede de fabrication de substrats avec detachement d'un support temporaire, et substrat associe |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2839199A1 FR2839199A1 (fr) | 2003-10-31 |
FR2839199B1 true FR2839199B1 (fr) | 2005-06-24 |
Family
ID=28800064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0205423A Expired - Lifetime FR2839199B1 (fr) | 2002-04-30 | 2002-04-30 | Procede de fabrication de substrats avec detachement d'un support temporaire, et substrat associe |
Country Status (7)
Country | Link |
---|---|
US (1) | US7041577B2 (fr) |
EP (1) | EP1502298A1 (fr) |
JP (1) | JP4854958B2 (fr) |
KR (1) | KR100917941B1 (fr) |
AU (1) | AU2003232414A1 (fr) |
FR (1) | FR2839199B1 (fr) |
WO (1) | WO2003094224A1 (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2866982B1 (fr) * | 2004-02-27 | 2008-05-09 | Soitec Silicon On Insulator | Procede de fabrication de composants electroniques |
EP1569263B1 (fr) * | 2004-02-27 | 2011-11-23 | OSRAM Opto Semiconductors GmbH | Procédé pour coller deux plaquettes |
US7329588B2 (en) * | 2004-11-16 | 2008-02-12 | Intel Corporation | Forming a reticle for extreme ultraviolet radiation and structures formed thereby |
FR2873235A1 (fr) * | 2004-12-31 | 2006-01-20 | Soitec Silicon On Insulator | Procede d'obtention d'un substrat demontable a energie de collage controlee |
KR101047762B1 (ko) * | 2005-02-21 | 2011-07-07 | 엘지이노텍 주식회사 | 질화갈륨 박막으로부터 기판을 분리하는 방법 |
TWI256082B (en) * | 2005-06-01 | 2006-06-01 | Touch Micro System Tech | Method of segmenting a wafer |
JP2007134388A (ja) * | 2005-11-08 | 2007-05-31 | Sharp Corp | 窒化物系半導体素子とその製造方法 |
US8133803B2 (en) * | 2009-06-23 | 2012-03-13 | Academia Sinica | Method for fabricating semiconductor substrates and semiconductor devices |
KR101162084B1 (ko) * | 2010-05-06 | 2012-07-03 | 광주과학기술원 | 수직형 발광 다이오드의 제조방법 및 막질들의 분리방법 |
FR2977069B1 (fr) | 2011-06-23 | 2014-02-07 | Soitec Silicon On Insulator | Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire |
DE102011113642B4 (de) * | 2011-09-16 | 2013-06-06 | Austriamicrosystems Ag | Verfahren zur Herstellung eines Halbleiterbauelementes unter Verwendung eines Hilfsträgers |
FR2980917B1 (fr) * | 2011-09-30 | 2013-09-27 | St Microelectronics Crolles 2 | Procede de realisation d'une liaison traversante electriquement conductrice |
EP2747130B1 (fr) | 2012-12-21 | 2017-10-11 | ams AG | Procédé de production d'une connexion de plaquette amovible et assemblage d'une plaquette et d'un support |
CN103474529B (zh) * | 2013-10-11 | 2016-05-11 | 聚灿光电科技股份有限公司 | 一种垂直led芯片的制作方法以及垂直led芯片 |
FR3019374A1 (fr) * | 2014-03-28 | 2015-10-02 | Soitec Silicon On Insulator | Procede de separation et de transfert de couches |
FR3041364B1 (fr) * | 2015-09-18 | 2017-10-06 | Soitec Silicon On Insulator | Procede de transfert de paves monocristallins |
FR3079659B1 (fr) * | 2018-03-29 | 2020-03-13 | Soitec | Procede de fabrication d'un substrat donneur pour la realisation d'une structure integree en trois dimensions et procede de fabrication d'une telle structure integree |
US10832933B1 (en) * | 2018-04-02 | 2020-11-10 | Facebook Technologies, Llc | Dry-etching of carrier substrate for microLED microassembly |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US6027958A (en) | 1996-07-11 | 2000-02-22 | Kopin Corporation | Transferred flexible integrated circuit |
DE69728022T2 (de) * | 1996-12-18 | 2004-08-12 | Canon K.K. | Vefahren zum Herstellen eines Halbleiterartikels unter Verwendung eines Substrates mit einer porösen Halbleiterschicht |
JPH1145862A (ja) * | 1997-07-24 | 1999-02-16 | Denso Corp | 半導体基板の製造方法 |
JP2001523046A (ja) | 1997-11-11 | 2001-11-20 | アービン・センサーズ・コーポレイション | 回路を備える半導体ウェハをシンニングするための方法および同方法によって作られるウェハ |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JP3525061B2 (ja) * | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
US6177359B1 (en) * | 1999-06-07 | 2001-01-23 | Agilent Technologies, Inc. | Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
FR2796491B1 (fr) * | 1999-07-12 | 2001-08-31 | Commissariat Energie Atomique | Procede de decollement de deux elements et dispositif pour sa mise en oeuvre |
FR2809867B1 (fr) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
US6806171B1 (en) * | 2001-08-24 | 2004-10-19 | Silicon Wafer Technologies, Inc. | Method of producing a thin layer of crystalline material |
-
2002
- 2002-04-30 FR FR0205423A patent/FR2839199B1/fr not_active Expired - Lifetime
-
2003
- 2003-04-30 EP EP03747530A patent/EP1502298A1/fr not_active Withdrawn
- 2003-04-30 WO PCT/IB2003/002431 patent/WO2003094224A1/fr active Application Filing
- 2003-04-30 AU AU2003232414A patent/AU2003232414A1/en not_active Abandoned
- 2003-04-30 KR KR1020047017490A patent/KR100917941B1/ko active IP Right Grant
- 2003-04-30 JP JP2004502345A patent/JP4854958B2/ja not_active Expired - Lifetime
-
2004
- 2004-10-22 US US10/972,158 patent/US7041577B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU2003232414A1 (en) | 2003-11-17 |
US20050112885A1 (en) | 2005-05-26 |
KR100917941B1 (ko) | 2009-09-21 |
WO2003094224A8 (fr) | 2004-01-15 |
WO2003094224B1 (fr) | 2004-02-26 |
JP2005524241A (ja) | 2005-08-11 |
US7041577B2 (en) | 2006-05-09 |
EP1502298A1 (fr) | 2005-02-02 |
FR2839199A1 (fr) | 2003-10-31 |
WO2003094224A1 (fr) | 2003-11-13 |
KR20040102197A (ko) | 2004-12-03 |
JP4854958B2 (ja) | 2012-01-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |
Owner name: SOITEC, FR Effective date: 20120423 |
|
PLFP | Fee payment |
Year of fee payment: 15 |
|
PLFP | Fee payment |
Year of fee payment: 16 |
|
PLFP | Fee payment |
Year of fee payment: 17 |
|
PLFP | Fee payment |
Year of fee payment: 19 |
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PLFP | Fee payment |
Year of fee payment: 20 |