DE60220762T2 - Halbleiterbauelement und zugehöriges Herstellungsverfahren - Google Patents

Halbleiterbauelement und zugehöriges Herstellungsverfahren Download PDF

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Publication number
DE60220762T2
DE60220762T2 DE60220762T DE60220762T DE60220762T2 DE 60220762 T2 DE60220762 T2 DE 60220762T2 DE 60220762 T DE60220762 T DE 60220762T DE 60220762 T DE60220762 T DE 60220762T DE 60220762 T2 DE60220762 T2 DE 60220762T2
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Prior art keywords
semiconductor layer
region
conductive
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layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60220762T
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German (de)
English (en)
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DE60220762D1 (de
Inventor
Kazuyuki Kawasaki-shi Kumeno
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Fujitsu Semiconductor Ltd
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Fujitsu Ltd
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Publication of DE60220762D1 publication Critical patent/DE60220762D1/de
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Publication of DE60220762T2 publication Critical patent/DE60220762T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE60220762T 2001-12-11 2002-04-25 Halbleiterbauelement und zugehöriges Herstellungsverfahren Expired - Lifetime DE60220762T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001377623 2001-12-11
JP2001377623A JP4000256B2 (ja) 2001-12-11 2001-12-11 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE60220762D1 DE60220762D1 (de) 2007-08-02
DE60220762T2 true DE60220762T2 (de) 2007-10-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE60220762T Expired - Lifetime DE60220762T2 (de) 2001-12-11 2002-04-25 Halbleiterbauelement und zugehöriges Herstellungsverfahren

Country Status (7)

Country Link
US (1) US6781207B2 (enExample)
EP (1) EP1320130B1 (enExample)
JP (1) JP4000256B2 (enExample)
KR (1) KR100815379B1 (enExample)
CN (1) CN100386878C (enExample)
DE (1) DE60220762T2 (enExample)
TW (1) TW577146B (enExample)

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US7197896B2 (en) 2003-09-05 2007-04-03 3M Innovative Properties Company Methods of making Al2O3-SiO2 ceramics
JP2005203436A (ja) * 2004-01-13 2005-07-28 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP2005322730A (ja) * 2004-05-07 2005-11-17 Renesas Technology Corp 半導体装置及びその製造方法
JP4268569B2 (ja) * 2004-06-16 2009-05-27 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
KR100647882B1 (ko) * 2004-07-09 2006-11-24 주식회사 마루스 접속력 향상구조를 갖는 전기접속기용 커넥터
JP4969779B2 (ja) * 2004-12-28 2012-07-04 株式会社東芝 半導体装置の製造方法
JP2006202860A (ja) * 2005-01-19 2006-08-03 Toshiba Corp 半導体装置及びその製造方法
KR100811267B1 (ko) * 2005-12-22 2008-03-07 주식회사 하이닉스반도체 반도체소자의 듀얼게이트 형성방법
JP5190189B2 (ja) * 2006-08-09 2013-04-24 パナソニック株式会社 半導体装置及びその製造方法
CN101577286B (zh) * 2008-05-05 2012-01-11 联华电子股份有限公司 复合式转移栅极及其制造方法
US11193634B2 (en) * 2012-07-03 2021-12-07 Tseng-Lu Chien LED and/or laser light source or bulb for light device
JP5559567B2 (ja) * 2010-02-24 2014-07-23 パナソニック株式会社 半導体装置
WO2012131818A1 (ja) 2011-03-25 2012-10-04 パナソニック株式会社 半導体装置及びその製造方法
FR2981503A1 (fr) * 2011-10-13 2013-04-19 St Microelectronics Rousset Transistor mos non sujet a l'effet hump
US9196624B2 (en) * 2012-07-10 2015-11-24 Cypress Semiconductor Corporation Leakage reducing writeline charge protection circuit
CN105206528A (zh) * 2014-06-17 2015-12-30 北大方正集团有限公司 平面vdmos器件的制造方法
JP6382025B2 (ja) * 2014-08-22 2018-08-29 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2015188103A (ja) * 2015-06-03 2015-10-29 ラピスセミコンダクタ株式会社 半導体装置の製造方法
US10446567B2 (en) * 2017-03-31 2019-10-15 Asahi Kasei Microdevices Corporation Nonvolatile storage element and reference voltage generation circuit
US10734489B2 (en) * 2018-07-31 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure with metal silicide layer

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JPH0786421A (ja) 1993-09-13 1995-03-31 Fujitsu Ltd 相補型ｍｏｓトランジスタ及びその製造方法
JP3249292B2 (ja) 1994-04-28 2002-01-21 株式会社リコー デュアルゲート構造の相補形ｍｉｓ半導体装置
JPH098040A (ja) * 1995-06-16 1997-01-10 Sony Corp 配線及びその形成方法
JPH0974195A (ja) * 1995-07-06 1997-03-18 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
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JP2910839B2 (ja) 1996-06-25 1999-06-23 日本電気株式会社 半導体装置とその製造方法
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JP3737914B2 (ja) 1999-09-02 2006-01-25 松下電器産業株式会社 半導体装置及びその製造方法
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JP2001156290A (ja) * 1999-11-30 2001-06-08 Nec Corp 半導体装置
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JP2001210725A (ja) 2000-01-25 2001-08-03 Matsushita Electric Ind Co Ltd 半導体装置
JP2001332630A (ja) * 2000-05-19 2001-11-30 Sharp Corp 半導体装置の製造方法
JP2002217310A (ja) * 2001-01-18 2002-08-02 Mitsubishi Electric Corp 半導体装置およびその製造方法
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Also Published As

Publication number Publication date
KR100815379B1 (ko) 2008-03-20
TW577146B (en) 2004-02-21
US6781207B2 (en) 2004-08-24
US20030107090A1 (en) 2003-06-12
CN1426110A (zh) 2003-06-25
CN100386878C (zh) 2008-05-07
EP1320130B1 (en) 2007-06-20
DE60220762D1 (de) 2007-08-02
KR20030047660A (ko) 2003-06-18
JP2003179056A (ja) 2003-06-27
EP1320130A2 (en) 2003-06-18
JP4000256B2 (ja) 2007-10-31
EP1320130A3 (en) 2005-05-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE