TW577146B - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- TW577146B TW577146B TW091105611A TW91105611A TW577146B TW 577146 B TW577146 B TW 577146B TW 091105611 A TW091105611 A TW 091105611A TW 91105611 A TW91105611 A TW 91105611A TW 577146 B TW577146 B TW 577146B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- film
- conductive
- thin film
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 286
- 238000004519 manufacturing process Methods 0.000 title claims description 52
- 238000000034 method Methods 0.000 claims abstract description 109
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 48
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 47
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 220
- 230000015572 biosynthetic process Effects 0.000 claims description 198
- 239000010410 layer Substances 0.000 claims description 94
- 239000010409 thin film Substances 0.000 claims description 84
- 239000012535 impurity Substances 0.000 claims description 70
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 46
- -1 phosphorus ion Chemical class 0.000 claims description 36
- 150000002500 ions Chemical class 0.000 claims description 30
- 238000002513 implantation Methods 0.000 claims description 24
- 229910044991 metal oxide Inorganic materials 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 14
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 10
- 230000002079 cooperative effect Effects 0.000 claims description 9
- 229910001449 indium ion Inorganic materials 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 63
- 229920005591 polysilicon Polymers 0.000 abstract description 12
- 238000005755 formation reaction Methods 0.000 description 197
- 229920002120 photoresistant polymer Polymers 0.000 description 100
- 238000005468 ion implantation Methods 0.000 description 39
- 239000004575 stone Substances 0.000 description 14
- 229910052785 arsenic Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- WWTBZEKOSBFBEM-SPWPXUSOSA-N (2s)-2-[[2-benzyl-3-[hydroxy-[(1r)-2-phenyl-1-(phenylmethoxycarbonylamino)ethyl]phosphoryl]propanoyl]amino]-3-(1h-indol-3-yl)propanoic acid Chemical compound N([C@@H](CC=1C2=CC=CC=C2NC=1)C(=O)O)C(=O)C(CP(O)(=O)[C@H](CC=1C=CC=CC=1)NC(=O)OCC=1C=CC=CC=1)CC1=CC=CC=C1 WWTBZEKOSBFBEM-SPWPXUSOSA-N 0.000 description 1
- BGAJNPLDJJBRHK-UHFFFAOYSA-N 3-[2-[5-(3-chloro-4-propan-2-yloxyphenyl)-1,3,4-thiadiazol-2-yl]-3-methyl-6,7-dihydro-4h-pyrazolo[4,3-c]pyridin-5-yl]propanoic acid Chemical compound C1=C(Cl)C(OC(C)C)=CC=C1C1=NN=C(N2C(=C3CN(CCC(O)=O)CCC3=N2)C)S1 BGAJNPLDJJBRHK-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940126208 compound 22 Drugs 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 150000002592 krypton Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000000952 spleen Anatomy 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0172—Manufacturing their gate conductors
- H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001377623A JP4000256B2 (ja) | 2001-12-11 | 2001-12-11 | 半導体装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW577146B true TW577146B (en) | 2004-02-21 |
Family
ID=19185541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091105611A TW577146B (en) | 2001-12-11 | 2002-03-22 | Semiconductor device and manufacturing method thereof |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6781207B2 (enExample) |
| EP (1) | EP1320130B1 (enExample) |
| JP (1) | JP4000256B2 (enExample) |
| KR (1) | KR100815379B1 (enExample) |
| CN (1) | CN100386878C (enExample) |
| DE (1) | DE60220762T2 (enExample) |
| TW (1) | TW577146B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7714364B2 (en) | 2005-01-19 | 2010-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device comprising gate electrode having arsenic and phosphorus |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004342821A (ja) * | 2003-05-15 | 2004-12-02 | Renesas Technology Corp | 半導体装置 |
| US7197896B2 (en) | 2003-09-05 | 2007-04-03 | 3M Innovative Properties Company | Methods of making Al2O3-SiO2 ceramics |
| JP2005203436A (ja) * | 2004-01-13 | 2005-07-28 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
| JP2005322730A (ja) * | 2004-05-07 | 2005-11-17 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| JP4268569B2 (ja) * | 2004-06-16 | 2009-05-27 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR100647882B1 (ko) * | 2004-07-09 | 2006-11-24 | 주식회사 마루스 | 접속력 향상구조를 갖는 전기접속기용 커넥터 |
| JP4969779B2 (ja) * | 2004-12-28 | 2012-07-04 | 株式会社東芝 | 半導体装置の製造方法 |
| KR100811267B1 (ko) * | 2005-12-22 | 2008-03-07 | 주식회사 하이닉스반도체 | 반도체소자의 듀얼게이트 형성방법 |
| JP5190189B2 (ja) * | 2006-08-09 | 2013-04-24 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| CN101577286B (zh) * | 2008-05-05 | 2012-01-11 | 联华电子股份有限公司 | 复合式转移栅极及其制造方法 |
| US11193634B2 (en) * | 2012-07-03 | 2021-12-07 | Tseng-Lu Chien | LED and/or laser light source or bulb for light device |
| JP5559567B2 (ja) * | 2010-02-24 | 2014-07-23 | パナソニック株式会社 | 半導体装置 |
| WO2012131818A1 (ja) | 2011-03-25 | 2012-10-04 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| FR2981503A1 (fr) * | 2011-10-13 | 2013-04-19 | St Microelectronics Rousset | Transistor mos non sujet a l'effet hump |
| US9196624B2 (en) * | 2012-07-10 | 2015-11-24 | Cypress Semiconductor Corporation | Leakage reducing writeline charge protection circuit |
| CN105206528A (zh) * | 2014-06-17 | 2015-12-30 | 北大方正集团有限公司 | 平面vdmos器件的制造方法 |
| JP6382025B2 (ja) * | 2014-08-22 | 2018-08-29 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2015188103A (ja) * | 2015-06-03 | 2015-10-29 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
| US10446567B2 (en) * | 2017-03-31 | 2019-10-15 | Asahi Kasei Microdevices Corporation | Nonvolatile storage element and reference voltage generation circuit |
| US10734489B2 (en) * | 2018-07-31 | 2020-08-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming semiconductor device structure with metal silicide layer |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2895166B2 (ja) * | 1990-05-31 | 1999-05-24 | キヤノン株式会社 | 半導体装置の製造方法 |
| JPH06244369A (ja) | 1993-02-19 | 1994-09-02 | Sony Corp | Ｃｍｏｓトランジスタおよびそのゲート電極との接続孔とその製造方法 |
| JP3039200B2 (ja) * | 1993-06-07 | 2000-05-08 | 日本電気株式会社 | Ｍｏｓトランジスタおよびその製造方法 |
| JPH0786421A (ja) | 1993-09-13 | 1995-03-31 | Fujitsu Ltd | 相補型ｍｏｓトランジスタ及びその製造方法 |
| JP3249292B2 (ja) | 1994-04-28 | 2002-01-21 | 株式会社リコー | デュアルゲート構造の相補形ｍｉｓ半導体装置 |
| JPH098040A (ja) * | 1995-06-16 | 1997-01-10 | Sony Corp | 配線及びその形成方法 |
| JPH0974195A (ja) * | 1995-07-06 | 1997-03-18 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
| JPH0927555A (ja) * | 1995-07-10 | 1997-01-28 | Ricoh Co Ltd | 半導体装置とその製造方法 |
| JPH0992823A (ja) * | 1995-09-26 | 1997-04-04 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP3393249B2 (ja) * | 1995-12-27 | 2003-04-07 | ソニー株式会社 | デュアルゲート構造を有する半導体装置およびその製造方法 |
| JPH09205152A (ja) * | 1996-01-25 | 1997-08-05 | Sony Corp | ２層ゲート電極構造を有するｃｍｏｓ半導体装置及びその製造方法 |
| TW322591B (enExample) * | 1996-02-09 | 1997-12-11 | Handotai Energy Kenkyusho Kk | |
| JPH09246541A (ja) | 1996-03-07 | 1997-09-19 | Sony Corp | 半導体装置の製造方法 |
| EP0798785B1 (en) * | 1996-03-29 | 2003-12-03 | STMicroelectronics S.r.l. | High-voltage-resistant MOS transistor, and corresponding manufacturing process |
| JP2910839B2 (ja) | 1996-06-25 | 1999-06-23 | 日本電気株式会社 | 半導体装置とその製造方法 |
| JP4142753B2 (ja) * | 1996-12-26 | 2008-09-03 | 株式会社東芝 | スパッタターゲット、スパッタ装置、半導体装置およびその製造方法 |
| EP0923116A1 (en) * | 1997-12-12 | 1999-06-16 | STMicroelectronics S.r.l. | Process for manufacturing integrated multi-crystal silicon resistors in MOS technology and integrated MOS device comprising multi-crystal silicon resistors |
| KR100255134B1 (ko) * | 1997-12-31 | 2000-05-01 | 윤종용 | 반도체 장치 및 그 제조 방법 |
| JP3737914B2 (ja) | 1999-09-02 | 2006-01-25 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| US6191460B1 (en) * | 1999-09-07 | 2001-02-20 | Integrated Device Technology, Inc. | Identical gate conductivity type static random access memory cell |
| JP2001156290A (ja) * | 1999-11-30 | 2001-06-08 | Nec Corp | 半導体装置 |
| KR20010066122A (ko) * | 1999-12-31 | 2001-07-11 | 박종섭 | 반도체 소자의 폴리사이드 듀얼 게이트 형성 방법 |
| JP2001210725A (ja) | 2000-01-25 | 2001-08-03 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JP2001332630A (ja) * | 2000-05-19 | 2001-11-30 | Sharp Corp | 半導体装置の製造方法 |
| JP2002217310A (ja) * | 2001-01-18 | 2002-08-02 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6894356B2 (en) * | 2002-03-15 | 2005-05-17 | Integrated Device Technology, Inc. | SRAM system having very lightly doped SRAM load transistors for improving SRAM cell stability and method for making the same |
-
2001
- 2001-12-11 JP JP2001377623A patent/JP4000256B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-21 US US10/101,974 patent/US6781207B2/en not_active Expired - Lifetime
- 2002-03-22 TW TW091105611A patent/TW577146B/zh not_active IP Right Cessation
- 2002-04-18 KR KR1020020021255A patent/KR100815379B1/ko not_active Expired - Fee Related
- 2002-04-25 EP EP02252913A patent/EP1320130B1/en not_active Expired - Lifetime
- 2002-04-25 DE DE60220762T patent/DE60220762T2/de not_active Expired - Lifetime
- 2002-05-16 CN CNB02119775XA patent/CN100386878C/zh not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7714364B2 (en) | 2005-01-19 | 2010-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device comprising gate electrode having arsenic and phosphorus |
| US8004050B2 (en) | 2005-01-19 | 2011-08-23 | Kabushiki Kaisha Toshiba | Semiconductor device comprising gate electrode having arsenic and phosphorous |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100815379B1 (ko) | 2008-03-20 |
| US6781207B2 (en) | 2004-08-24 |
| US20030107090A1 (en) | 2003-06-12 |
| CN1426110A (zh) | 2003-06-25 |
| CN100386878C (zh) | 2008-05-07 |
| EP1320130B1 (en) | 2007-06-20 |
| DE60220762D1 (de) | 2007-08-02 |
| KR20030047660A (ko) | 2003-06-18 |
| JP2003179056A (ja) | 2003-06-27 |
| DE60220762T2 (de) | 2007-10-11 |
| EP1320130A2 (en) | 2003-06-18 |
| JP4000256B2 (ja) | 2007-10-31 |
| EP1320130A3 (en) | 2005-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |