KR100815379B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100815379B1
KR100815379B1 KR1020020021255A KR20020021255A KR100815379B1 KR 100815379 B1 KR100815379 B1 KR 100815379B1 KR 1020020021255 A KR1020020021255 A KR 1020020021255A KR 20020021255 A KR20020021255 A KR 20020021255A KR 100815379 B1 KR100815379 B1 KR 100815379B1
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South Korea
Prior art keywords
semiconductor film
region
film
semiconductor
conductive
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KR1020020021255A
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English (en)
Korean (ko)
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KR20030047660A (ko
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구메노가즈유끼
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후지쯔 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020020021255A 2001-12-11 2002-04-18 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100815379B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00377623 2001-12-11
JP2001377623A JP4000256B2 (ja) 2001-12-11 2001-12-11 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR20030047660A KR20030047660A (ko) 2003-06-18
KR100815379B1 true KR100815379B1 (ko) 2008-03-20

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ID=19185541

Family Applications (1)

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KR1020020021255A Expired - Fee Related KR100815379B1 (ko) 2001-12-11 2002-04-18 반도체 장치 및 그 제조 방법

Country Status (7)

Country Link
US (1) US6781207B2 (enExample)
EP (1) EP1320130B1 (enExample)
JP (1) JP4000256B2 (enExample)
KR (1) KR100815379B1 (enExample)
CN (1) CN100386878C (enExample)
DE (1) DE60220762T2 (enExample)
TW (1) TW577146B (enExample)

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JP2004342821A (ja) * 2003-05-15 2004-12-02 Renesas Technology Corp 半導体装置
US7197896B2 (en) 2003-09-05 2007-04-03 3M Innovative Properties Company Methods of making Al2O3-SiO2 ceramics
JP2005203436A (ja) * 2004-01-13 2005-07-28 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP2005322730A (ja) * 2004-05-07 2005-11-17 Renesas Technology Corp 半導体装置及びその製造方法
JP4268569B2 (ja) * 2004-06-16 2009-05-27 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
KR100647882B1 (ko) * 2004-07-09 2006-11-24 주식회사 마루스 접속력 향상구조를 갖는 전기접속기용 커넥터
JP4969779B2 (ja) * 2004-12-28 2012-07-04 株式会社東芝 半導体装置の製造方法
JP2006202860A (ja) * 2005-01-19 2006-08-03 Toshiba Corp 半導体装置及びその製造方法
KR100811267B1 (ko) * 2005-12-22 2008-03-07 주식회사 하이닉스반도체 반도체소자의 듀얼게이트 형성방법
JP5190189B2 (ja) * 2006-08-09 2013-04-24 パナソニック株式会社 半導体装置及びその製造方法
CN101577286B (zh) * 2008-05-05 2012-01-11 联华电子股份有限公司 复合式转移栅极及其制造方法
US11193634B2 (en) * 2012-07-03 2021-12-07 Tseng-Lu Chien LED and/or laser light source or bulb for light device
JP5559567B2 (ja) * 2010-02-24 2014-07-23 パナソニック株式会社 半導体装置
WO2012131818A1 (ja) 2011-03-25 2012-10-04 パナソニック株式会社 半導体装置及びその製造方法
FR2981503A1 (fr) * 2011-10-13 2013-04-19 St Microelectronics Rousset Transistor mos non sujet a l'effet hump
US9196624B2 (en) * 2012-07-10 2015-11-24 Cypress Semiconductor Corporation Leakage reducing writeline charge protection circuit
CN105206528A (zh) * 2014-06-17 2015-12-30 北大方正集团有限公司 平面vdmos器件的制造方法
JP6382025B2 (ja) * 2014-08-22 2018-08-29 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2015188103A (ja) * 2015-06-03 2015-10-29 ラピスセミコンダクタ株式会社 半導体装置の製造方法
US10446567B2 (en) * 2017-03-31 2019-10-15 Asahi Kasei Microdevices Corporation Nonvolatile storage element and reference voltage generation circuit
US10734489B2 (en) * 2018-07-31 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure with metal silicide layer

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JPH0927555A (ja) * 1995-07-10 1997-01-28 Ricoh Co Ltd 半導体装置とその製造方法
JPH0992823A (ja) * 1995-09-26 1997-04-04 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH09181194A (ja) * 1995-12-27 1997-07-11 Sony Corp デュアルゲート構造およびその製造方法
JPH09246541A (ja) * 1996-03-07 1997-09-19 Sony Corp 半導体装置の製造方法

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JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法
JPH06244369A (ja) 1993-02-19 1994-09-02 Sony Corp Ｃｍｏｓトランジスタおよびそのゲート電極との接続孔とその製造方法
JP3039200B2 (ja) * 1993-06-07 2000-05-08 日本電気株式会社 Ｍｏｓトランジスタおよびその製造方法
JPH0786421A (ja) 1993-09-13 1995-03-31 Fujitsu Ltd 相補型ｍｏｓトランジスタ及びその製造方法
JP3249292B2 (ja) 1994-04-28 2002-01-21 株式会社リコー デュアルゲート構造の相補形ｍｉｓ半導体装置
JPH098040A (ja) * 1995-06-16 1997-01-10 Sony Corp 配線及びその形成方法
JPH0974195A (ja) * 1995-07-06 1997-03-18 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JPH09205152A (ja) * 1996-01-25 1997-08-05 Sony Corp ２層ゲート電極構造を有するｃｍｏｓ半導体装置及びその製造方法
TW322591B (enExample) * 1996-02-09 1997-12-11 Handotai Energy Kenkyusho Kk
EP0798785B1 (en) * 1996-03-29 2003-12-03 STMicroelectronics S.r.l. High-voltage-resistant MOS transistor, and corresponding manufacturing process
JP2910839B2 (ja) 1996-06-25 1999-06-23 日本電気株式会社 半導体装置とその製造方法
JP4142753B2 (ja) * 1996-12-26 2008-09-03 株式会社東芝 スパッタターゲット、スパッタ装置、半導体装置およびその製造方法
EP0923116A1 (en) * 1997-12-12 1999-06-16 STMicroelectronics S.r.l. Process for manufacturing integrated multi-crystal silicon resistors in MOS technology and integrated MOS device comprising multi-crystal silicon resistors
KR100255134B1 (ko) * 1997-12-31 2000-05-01 윤종용 반도체 장치 및 그 제조 방법
JP3737914B2 (ja) 1999-09-02 2006-01-25 松下電器産業株式会社 半導体装置及びその製造方法
US6191460B1 (en) * 1999-09-07 2001-02-20 Integrated Device Technology, Inc. Identical gate conductivity type static random access memory cell
JP2001156290A (ja) * 1999-11-30 2001-06-08 Nec Corp 半導体装置
KR20010066122A (ko) * 1999-12-31 2001-07-11 박종섭 반도체 소자의 폴리사이드 듀얼 게이트 형성 방법
JP2001210725A (ja) 2000-01-25 2001-08-03 Matsushita Electric Ind Co Ltd 半導体装置
JP2001332630A (ja) * 2000-05-19 2001-11-30 Sharp Corp 半導体装置の製造方法
JP2002217310A (ja) * 2001-01-18 2002-08-02 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6894356B2 (en) * 2002-03-15 2005-05-17 Integrated Device Technology, Inc. SRAM system having very lightly doped SRAM load transistors for improving SRAM cell stability and method for making the same

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH0927555A (ja) * 1995-07-10 1997-01-28 Ricoh Co Ltd 半導体装置とその製造方法
JPH0992823A (ja) * 1995-09-26 1997-04-04 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH09181194A (ja) * 1995-12-27 1997-07-11 Sony Corp デュアルゲート構造およびその製造方法
JPH09246541A (ja) * 1996-03-07 1997-09-19 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
TW577146B (en) 2004-02-21
US6781207B2 (en) 2004-08-24
US20030107090A1 (en) 2003-06-12
CN1426110A (zh) 2003-06-25
CN100386878C (zh) 2008-05-07
EP1320130B1 (en) 2007-06-20
DE60220762D1 (de) 2007-08-02
KR20030047660A (ko) 2003-06-18
JP2003179056A (ja) 2003-06-27
DE60220762T2 (de) 2007-10-11
EP1320130A2 (en) 2003-06-18
JP4000256B2 (ja) 2007-10-31
EP1320130A3 (en) 2005-05-11

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