DE60044443D1 - Aktivmatrixsubstrat, Verfahren zur Herstellung, und dieses enthaltender Bildsensor - Google Patents

Aktivmatrixsubstrat, Verfahren zur Herstellung, und dieses enthaltender Bildsensor

Info

Publication number
DE60044443D1
DE60044443D1 DE60044443T DE60044443T DE60044443D1 DE 60044443 D1 DE60044443 D1 DE 60044443D1 DE 60044443 T DE60044443 T DE 60044443T DE 60044443 T DE60044443 T DE 60044443T DE 60044443 D1 DE60044443 D1 DE 60044443D1
Authority
DE
Germany
Prior art keywords
manufacture
image sensor
same
active matrix
matrix substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60044443T
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English (en)
Inventor
Hisashi Nagata
Yoshihiro Izumi
Takayuki Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
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Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60044443D1 publication Critical patent/DE60044443D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
DE60044443T 1999-03-11 2000-03-10 Aktivmatrixsubstrat, Verfahren zur Herstellung, und dieses enthaltender Bildsensor Expired - Lifetime DE60044443D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6552099 1999-03-11
JP2000045034A JP3683463B2 (ja) 1999-03-11 2000-02-22 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ

Publications (1)

Publication Number Publication Date
DE60044443D1 true DE60044443D1 (de) 2010-07-08

Family

ID=26406667

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60044443T Expired - Lifetime DE60044443D1 (de) 1999-03-11 2000-03-10 Aktivmatrixsubstrat, Verfahren zur Herstellung, und dieses enthaltender Bildsensor

Country Status (6)

Country Link
US (2) US6784949B1 (de)
EP (2) EP1037095B1 (de)
JP (1) JP3683463B2 (de)
KR (1) KR100403932B1 (de)
DE (1) DE60044443D1 (de)
TW (1) TWI258626B (de)

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KR100271037B1 (ko) 1997-09-05 2000-11-01 구본준, 론 위라하디락사 액정 표시 장치의 구조 및 그 액정 표시 장치의 제조 방법(liquid crystal display device and the method for manufacturing the same)
JPH11326928A (ja) * 1998-05-08 1999-11-26 Hitachi Ltd 液晶表示装置
JP3362008B2 (ja) * 1999-02-23 2003-01-07 シャープ株式会社 液晶表示装置およびその製造方法
JP3555866B2 (ja) 1999-09-01 2004-08-18 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置とその製造方法

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US7250991B2 (en) 2007-07-31
EP1037095B1 (de) 2010-05-26
TWI258626B (en) 2006-07-21
US20040169991A1 (en) 2004-09-02
KR20000076822A (ko) 2000-12-26
JP2000323698A (ja) 2000-11-24
KR100403932B1 (ko) 2003-11-01
US6784949B1 (en) 2004-08-31
EP2192441A3 (de) 2011-06-22
JP3683463B2 (ja) 2005-08-17
EP1037095A2 (de) 2000-09-20
EP1037095A3 (de) 2001-01-17

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