DE60044443D1 - Aktivmatrixsubstrat, Verfahren zur Herstellung, und dieses enthaltender Bildsensor - Google Patents

Aktivmatrixsubstrat, Verfahren zur Herstellung, und dieses enthaltender Bildsensor

Info

Publication number
DE60044443D1
DE60044443D1 DE60044443T DE60044443T DE60044443D1 DE 60044443 D1 DE60044443 D1 DE 60044443D1 DE 60044443 T DE60044443 T DE 60044443T DE 60044443 T DE60044443 T DE 60044443T DE 60044443 D1 DE60044443 D1 DE 60044443D1
Authority
DE
Germany
Prior art keywords
manufacture
image sensor
same
active matrix
matrix substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60044443T
Other languages
English (en)
Inventor
Hisashi Nagata
Yoshihiro Izumi
Takayuki Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60044443D1 publication Critical patent/DE60044443D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
DE60044443T 1999-03-11 2000-03-10 Aktivmatrixsubstrat, Verfahren zur Herstellung, und dieses enthaltender Bildsensor Expired - Lifetime DE60044443D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6552099 1999-03-11
JP2000045034A JP3683463B2 (ja) 1999-03-11 2000-02-22 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ

Publications (1)

Publication Number Publication Date
DE60044443D1 true DE60044443D1 (de) 2010-07-08

Family

ID=26406667

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60044443T Expired - Lifetime DE60044443D1 (de) 1999-03-11 2000-03-10 Aktivmatrixsubstrat, Verfahren zur Herstellung, und dieses enthaltender Bildsensor

Country Status (6)

Country Link
US (2) US6784949B1 (de)
EP (2) EP1037095B1 (de)
JP (1) JP3683463B2 (de)
KR (1) KR100403932B1 (de)
DE (1) DE60044443D1 (de)
TW (1) TWI258626B (de)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3581073B2 (ja) * 2000-03-07 2004-10-27 シャープ株式会社 イメージセンサおよびその製造方法
JP2001257350A (ja) * 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001284562A (ja) * 2000-03-30 2001-10-12 Toshiba Corp Ｘ線検出装置用アレイ基板およびその検査方法
JP2001313384A (ja) * 2000-04-28 2001-11-09 Shimadzu Corp 放射線検出器
JP3708440B2 (ja) * 2001-01-30 2005-10-19 シャープ株式会社 イメージセンサ
KR100796749B1 (ko) 2001-05-16 2008-01-22 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 어레이 기판
FR2826766B1 (fr) * 2001-06-29 2003-10-31 Thales Avionics Lcd Matrice active de transistors en couches minces ou tft pour capteur optique ou ecran de visualisation
JP2003017563A (ja) * 2001-07-04 2003-01-17 Advanced Display Inc 半導体装置および半導体装置の製法
WO2003052501A1 (en) * 2001-12-14 2003-06-26 Samsung Electronics Co., Ltd. A manufacturing method of a panel for liquid crystal
TW550531B (en) * 2002-02-07 2003-09-01 Chi Mei Optoelectronics Corp Pixel driving device of liquid crystal display
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
TWI270919B (en) * 2002-04-15 2007-01-11 Semiconductor Energy Lab Display device and method of fabricating the same
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
TW540128B (en) * 2002-07-12 2003-07-01 Hannstar Display Corp Manufacturing method of X-ray detector array
KR100905472B1 (ko) * 2002-12-17 2009-07-02 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 이를 포함하는 액정 표시장치
JP4376522B2 (ja) * 2003-01-24 2009-12-02 シャープ株式会社 電磁波検出器
US7541617B2 (en) 2003-02-14 2009-06-02 Canon Kabushiki Kaisha Radiation image pickup device
US8390548B2 (en) * 2003-05-15 2013-03-05 Sharp Kabushiki Kaisha Liquid crystal display device and driving method thereof
JP2005182852A (ja) * 2003-12-16 2005-07-07 Toshiba Corp 電子機器およびプログラム
US7221413B2 (en) * 2004-08-05 2007-05-22 Au Optronics Corporation Thin film transistor array substrate and repairing method thereof
TWI284245B (en) * 2004-08-12 2007-07-21 Au Optronics Corp Pixel structure of a thin film transistor liquid crystal display and fabricating method thereof
KR101189266B1 (ko) * 2004-09-24 2012-10-09 삼성디스플레이 주식회사 액정 표시 장치
KR101090253B1 (ko) * 2004-10-06 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
KR101133757B1 (ko) * 2004-11-25 2012-04-09 삼성전자주식회사 액정 표시 장치
US8305507B2 (en) * 2005-02-25 2012-11-06 Samsung Display Co., Ltd. Thin film transistor array panel having improved storage capacitance and manufacturing method thereof
JP5105769B2 (ja) * 2005-05-13 2012-12-26 株式会社半導体エネルギー研究所 半導体装置
US8253179B2 (en) 2005-05-13 2012-08-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
TWI304146B (en) * 2005-08-08 2008-12-11 Au Optronics Corp Active matrix substrate and method of repairing thereof
JP5159065B2 (ja) * 2005-08-31 2013-03-06 キヤノン株式会社 放射線検出装置、放射線撮像装置および放射線撮像システム
KR101204365B1 (ko) * 2006-01-16 2012-11-26 삼성디스플레이 주식회사 액정 표시 패널 및 그 제조 방법
EP1998220A4 (de) * 2006-03-15 2009-05-13 Sharp Kk Substrat mit aktiver matrix, anzeigevorrichtung und fernsehempfänger
JP2007294709A (ja) 2006-04-26 2007-11-08 Epson Imaging Devices Corp 電気光学装置、電子機器、および電気光学装置の製造方法
JP5076372B2 (ja) * 2006-06-16 2012-11-21 カシオ計算機株式会社 薄膜トランジスタパネルおよび液晶表示装置
JP2008122659A (ja) * 2006-11-13 2008-05-29 Seiko Epson Corp 液晶表示装置及び液晶表示装置の製造方法並びに電子機器
JP5280671B2 (ja) * 2006-12-20 2013-09-04 富士フイルム株式会社 画像検出器および放射線検出システム
US7872720B2 (en) * 2007-03-01 2011-01-18 Seiko Epson Corporation Liquid crystal device and projector
JP2007258726A (ja) * 2007-03-29 2007-10-04 Advanced Display Inc アクティブマトリクス基板のコンタクトホール形成方法
TWI361329B (en) * 2007-04-10 2012-04-01 Au Optronics Corp Array substrate and method for manufacturing the same
WO2008152830A1 (ja) * 2007-06-14 2008-12-18 Sharp Kabushiki Kaisha 表示パネルおよび表示装置ならびに表示パネルの製造方法
JP4389978B2 (ja) * 2007-07-06 2009-12-24 ソニー株式会社 表示装置および表示装置の製造方法
JP5007632B2 (ja) * 2007-09-04 2012-08-22 株式会社島津製作所 放射線撮像装置
JP5145866B2 (ja) * 2007-10-26 2013-02-20 株式会社ニコン 固体撮像素子
WO2009075138A1 (ja) * 2007-12-12 2009-06-18 Konica Minolta Medical & Graphic, Inc. 電磁波検出装置
JP5366410B2 (ja) * 2008-01-30 2013-12-11 富士フイルム株式会社 電磁波検出素子の製造方法
US20090237540A1 (en) * 2008-03-20 2009-09-24 Micron Technology, Inc. Imager method and apparatus having combined gate signals
JP5182993B2 (ja) 2008-03-31 2013-04-17 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP2009252835A (ja) * 2008-04-02 2009-10-29 Fujifilm Corp 電磁波検出素子
JP5388488B2 (ja) * 2008-06-19 2014-01-15 富士フイルム株式会社 電磁波検出素子
KR20100022372A (ko) * 2008-08-19 2010-03-02 삼성전자주식회사 표시장치 및 그 제조 방법
TWI370311B (en) * 2008-09-05 2012-08-11 Au Optronics Corp Pixel structure of a display panel
US20110181568A1 (en) * 2008-09-30 2011-07-28 Sharp Kabushiki Kaisha Display device
TWI416479B (zh) * 2008-10-03 2013-11-21 Hannstar Display Corp 液晶顯示器及其驅動方法
US8570453B2 (en) 2009-02-03 2013-10-29 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device and television receiver
US8547492B2 (en) 2009-02-03 2013-10-01 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal panel, liquid crystal display device, liquid crystal display unit and television receiver
WO2010100789A1 (ja) 2009-03-05 2010-09-10 シャープ株式会社 アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶パネル、液晶パネルの製造方法、液晶表示装置、液晶表示ユニット、テレビジョン受像機
US20120001839A1 (en) * 2009-03-05 2012-01-05 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal panel, liquid crystal display device, liquid crystal display unit, and television receiver
KR101422362B1 (ko) 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 패널 및 전자 기기
JP4506899B2 (ja) * 2009-07-16 2010-07-21 カシオ計算機株式会社 薄膜トランジスタパネルおよびその製造方法
JP5467846B2 (ja) * 2009-11-20 2014-04-09 富士フイルム株式会社 放射線検出素子
TWM387373U (en) * 2010-01-15 2010-08-21 Chunghwa Picture Tubes Co Pixel structure
JP5582800B2 (ja) * 2010-01-27 2014-09-03 パナソニック液晶ディスプレイ株式会社 液晶表示装置及びその製造方法
CN102971784B (zh) * 2010-07-02 2016-08-03 株式会社半导体能源研究所 液晶显示装置及驱动液晶显示装置的方法
JP2012079860A (ja) * 2010-09-30 2012-04-19 Canon Inc 検出装置及び放射線検出システム
KR101030725B1 (ko) * 2010-12-16 2011-04-28 (주)승산 인공암벽 구조물 및 클라임홀더의 제조방법
WO2012090879A1 (ja) * 2010-12-28 2012-07-05 シャープ株式会社 アクティブマトリクス基板
KR101909139B1 (ko) * 2011-02-07 2018-12-19 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN102790063B (zh) * 2012-07-26 2017-10-17 北京京东方光电科技有限公司 一种传感器及其制造方法
KR20150040873A (ko) * 2012-08-03 2015-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE102013216824B4 (de) 2012-08-28 2024-10-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
TWI657539B (zh) 2012-08-31 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置
KR102679509B1 (ko) 2012-09-13 2024-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8981372B2 (en) * 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
TWI498653B (zh) * 2012-10-05 2015-09-01 Chunghwa Picture Tubes Ltd 畫素結構及其製作方法
KR20220145922A (ko) 2012-12-25 2022-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
JP6111688B2 (ja) * 2013-01-25 2017-04-12 セイコーエプソン株式会社 電気光学装置および電子機器
US8981374B2 (en) * 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI491032B (zh) * 2013-02-05 2015-07-01 Innolux Corp 主動矩陣式影像感測面板及裝置
EP2987186B1 (de) 2013-04-19 2020-07-01 Lightspin Technologies, Inc. Integrierte lawinenphotodiodenarrays
US9915848B2 (en) * 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
TWI687748B (zh) * 2013-06-05 2020-03-11 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
TWI512357B (zh) * 2013-06-24 2015-12-11 Univ Vanung Wide dynamic range controllable liquid crystal image sensor
KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
JP6367655B2 (ja) * 2013-09-13 2018-08-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20150078308A (ko) * 2013-12-30 2015-07-08 삼성디스플레이 주식회사 표시 장치 및 그 리페어 방법
JP2015129863A (ja) * 2014-01-08 2015-07-16 パナソニック液晶ディスプレイ株式会社 液晶表示装置及びその製造方法
JP6274880B2 (ja) 2014-01-24 2018-02-07 オリンパス株式会社 固体撮像装置および撮像装置
JP6463065B2 (ja) 2014-10-09 2019-01-30 三菱電機株式会社 アレイ基板およびこれを備える液晶表示パネルならびにアレイ基板の検査方法
WO2016128860A1 (ja) * 2015-02-12 2016-08-18 株式会社半導体エネルギー研究所 表示装置
US9768211B2 (en) 2015-05-06 2017-09-19 LightSpin Technologies Inc. Integrated avalanche photodiode arrays
US10529884B2 (en) 2017-11-09 2020-01-07 LightSpin Technologies Inc. Virtual negative bevel and methods of isolating adjacent devices
CN110660816B (zh) * 2018-06-29 2022-06-10 京东方科技集团股份有限公司 一种平板探测器
CN109713076A (zh) * 2019-02-21 2019-05-03 京东方科技集团股份有限公司 平板探测基板及其制备方法、平坦探测器
US11888233B2 (en) * 2020-04-07 2024-01-30 Ramot At Tel-Aviv University Ltd Tailored terahertz radiation

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58172685A (ja) 1982-04-01 1983-10-11 セイコーエプソン株式会社 液晶表示体装置
JPS60160173A (ja) 1984-01-30 1985-08-21 Sharp Corp 薄膜トランジスタ
JP2740813B2 (ja) * 1988-02-26 1998-04-15 セイコープレシジョン株式会社 非晶質シリコン薄膜トランジシタアレイ基板
JPH02113580A (ja) * 1988-10-21 1990-04-25 Nec Corp 薄膜回路
DE4002429A1 (de) 1990-01-27 1991-08-01 Philips Patentverwaltung Sensormatrix
JP2622183B2 (ja) 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
JPH03294824A (ja) 1990-04-13 1991-12-26 Nec Corp アクティブマトリックス型液晶表示素子アレイ
US5162933A (en) * 1990-05-16 1992-11-10 Nippon Telegraph And Telephone Corporation Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium
JP2963529B2 (ja) * 1990-10-29 1999-10-18 シャープ株式会社 アクティブマトリクス表示装置
GB9115259D0 (en) 1991-07-15 1991-08-28 Philips Electronic Associated An image detector
JPH0540271A (ja) 1991-08-06 1993-02-19 Nec Corp アクテイブマトリツクス型液晶表示素子アレイ
JPH082995B2 (ja) 1991-10-24 1996-01-17 富士通株式会社 マイクロカプセル型導電性フィラーの作製方法
CA2095366C (en) 1992-05-21 1999-09-14 Timothy C. Collins Hybridized semiconductor pixel detector arrays for use in digital radiography
JP3378280B2 (ja) 1992-11-27 2003-02-17 株式会社東芝 薄膜トランジスタおよびその製造方法
US5319206A (en) 1992-12-16 1994-06-07 E. I. Du Pont De Nemours And Company Method and apparatus for acquiring an X-ray image using a solid state device
US5610739A (en) 1994-05-31 1997-03-11 Matsushita Electric Industrial Co., Ltd. Liquid crystal display unit with a plurality of subpixels
TW321731B (de) * 1994-07-27 1997-12-01 Hitachi Ltd
KR970011972A (ko) 1995-08-11 1997-03-29 쯔지 하루오 투과형 액정 표시 장치 및 그 제조 방법
JPH0980416A (ja) * 1995-09-13 1997-03-28 Sharp Corp 液晶表示装置
JP3604106B2 (ja) 1995-09-27 2004-12-22 シャープ株式会社 液晶表示装置
JP3418653B2 (ja) * 1995-09-28 2003-06-23 シャープ株式会社 アクティブマトリクス型液晶表示装置
US6211928B1 (en) * 1996-03-26 2001-04-03 Lg Electronics Inc. Liquid crystal display and method for manufacturing the same
JPH10229197A (ja) * 1997-02-17 1998-08-25 Sanyo Electric Co Ltd 薄膜トランジスタ、薄膜トランジスタの製造方法
US5808706A (en) * 1997-03-19 1998-09-15 Samsung Electronics Co., Ltd. Thin-film transistor liquid crystal display devices having cross-coupled storage capacitors
KR19990003712A (ko) 1997-06-26 1999-01-15 김영환 초고개구율 액정 표시 소자 및 그의 제조방법
KR100271037B1 (ko) 1997-09-05 2000-11-01 구본준, 론 위라하디락사 액정 표시 장치의 구조 및 그 액정 표시 장치의 제조 방법(liquid crystal display device and the method for manufacturing the same)
JPH11326928A (ja) * 1998-05-08 1999-11-26 Hitachi Ltd 液晶表示装置
JP3362008B2 (ja) * 1999-02-23 2003-01-07 シャープ株式会社 液晶表示装置およびその製造方法
JP3555866B2 (ja) 1999-09-01 2004-08-18 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置とその製造方法

Also Published As

Publication number Publication date
KR20000076822A (ko) 2000-12-26
US7250991B2 (en) 2007-07-31
EP1037095A2 (de) 2000-09-20
JP2000323698A (ja) 2000-11-24
JP3683463B2 (ja) 2005-08-17
EP1037095B1 (de) 2010-05-26
EP1037095A3 (de) 2001-01-17
TWI258626B (en) 2006-07-21
EP2192441A2 (de) 2010-06-02
KR100403932B1 (ko) 2003-11-01
EP2192441A3 (de) 2011-06-22
US20040169991A1 (en) 2004-09-02
US6784949B1 (en) 2004-08-31

Similar Documents

Publication Publication Date Title
DE60044443D1 (de) Aktivmatrixsubstrat, Verfahren zur Herstellung, und dieses enthaltender Bildsensor
DE60033051D1 (de) Methode und einrichtung zur kontinuierlichen herstellung von diarylcarbonaten
DE69913433D1 (de) Planare Mikrolinsenanordnung und Verfahren zur deren Herstellung
DE69630488D1 (de) Halbleitersensor und Methode zu dessen Herstellung
AU6099100A (en) Ultra-rugged i.c. sensor and method of making the same
DE60011391D1 (de) Verfahren und zusammensetzungen zur erhöhung der anzahl weisser blutzellen
DE10083893T1 (de) Lineares Beleuchtungssystem, Verfahren zur Herstellung desselben und Abtastvorrichtung
DE60009578D1 (de) Vorrichtung zur Herstellung von Kontaktkörpern
DE69918233D1 (de) Polymilchsäure zusammensetzung und daraus hergestellter film
DE69725601D1 (de) Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterial
DE60023023T2 (de) Zirkoniumdioxidsol und verfahren zu seiner herstellung
DE60003892D1 (de) Wolfram-dotierter tiegel und verfahren zu seiner herstellung
DE19983486T1 (de) Verfahren zur Herstellung von Citalopram
DE69906389D1 (de) Verfahren zur herstellung von citalopram
DE69819015D1 (de) Norbonenpolymer und verfahren zur herstellung
DE69901178D1 (de) Nichtgesinterte elektrode und verfahren zur herstellung
DE69711230D1 (de) Biologisch aktive substanzen, verfahren zur herstellung und sie enthaltende zusammensetzungen
DE69838770D1 (de) Verfahren zur Herstellung elektrolumineszierender Vorrichtungen
DE60022818D1 (de) Tastenfolie und Verfahren zur Herstellung derselben
DE69808157D1 (de) Strahlungsbildwandler und Verfahren zur Herstellung desselben
DE60014507D1 (de) Keramikfolie und Verfahren zu deren Herstellung
DE60121574D1 (de) Festes dispersionssystem von pranlukast mit verbesserter auflösung und methode zu dessen herstellung
DE50100019D1 (de) Einkristallstab und Verfahren zur Herstellung desselben
DE69914175D1 (de) Thermoplastische Zusammensetzung und Verfahren zur Herstellung derselben
DE69805490D1 (de) Organisches elektrolumineszentes Gerät und Verfahren zur Herstellung desselben

Legal Events

Date Code Title Description
8364 No opposition during term of opposition