DE69725601D1 - Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterial - Google Patents
Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterialInfo
- Publication number
- DE69725601D1 DE69725601D1 DE69725601T DE69725601T DE69725601D1 DE 69725601 D1 DE69725601 D1 DE 69725601D1 DE 69725601 T DE69725601 T DE 69725601T DE 69725601 T DE69725601 T DE 69725601T DE 69725601 D1 DE69725601 D1 DE 69725601D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor arrangement
- spherical semiconductor
- production
- spherical
- arrangement material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 239000000463 material Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1017—Shape being a sphere
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1997/002993 WO1999010935A1 (en) | 1997-08-27 | 1997-08-27 | Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69725601D1 true DE69725601D1 (de) | 2003-11-20 |
DE69725601T2 DE69725601T2 (de) | 2004-04-15 |
Family
ID=14181037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69725601T Expired - Lifetime DE69725601T2 (de) | 1997-08-27 | 1997-08-27 | Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterial |
Country Status (8)
Country | Link |
---|---|
US (1) | US6294822B1 (de) |
EP (1) | EP0940860B1 (de) |
JP (1) | JP3326462B2 (de) |
KR (1) | KR100386833B1 (de) |
AU (1) | AU736457B2 (de) |
CA (1) | CA2269632C (de) |
DE (1) | DE69725601T2 (de) |
WO (1) | WO1999010935A1 (de) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6771239B1 (en) * | 1999-05-17 | 2004-08-03 | Seiko Epson Corporation | Method for manufacturing an active matrix substrate |
JP3992126B2 (ja) * | 1999-12-16 | 2007-10-17 | 株式会社三井ハイテック | 太陽電池の製造方法 |
JP4239352B2 (ja) * | 2000-03-28 | 2009-03-18 | 株式会社日立製作所 | 電子装置の製造方法 |
JP2002060943A (ja) * | 2000-08-22 | 2002-02-28 | Tohoku Electric Power Co Inc | 高純度シリコンの被覆方法及び装置 |
EP1646090B1 (de) * | 2000-10-20 | 2008-07-16 | Josuke Nakata | Lichtemittierdende oder lichtempfindliche Halbleiteranordnung und ihre Herstellungsmethode |
CN1182589C (zh) | 2000-10-20 | 2004-12-29 | 中田仗祐 | 发光或者受光用半导体组件及其制造方法 |
JP2002261301A (ja) * | 2001-02-28 | 2002-09-13 | Kyocera Corp | 光電変換装置 |
US6512301B1 (en) * | 2001-07-12 | 2003-01-28 | Intel Corporation | Making interconnections to a non-flat surface |
US7238968B2 (en) | 2001-08-13 | 2007-07-03 | Josuke Nakata | Semiconductor device and method of making the same |
CA2456671C (en) * | 2001-08-13 | 2009-09-22 | Josuke Nakata | Light emitting or light receiving semiconductor module and making method thereof |
CN1220277C (zh) * | 2001-10-19 | 2005-09-21 | 中田仗祐 | 发光或感光半导体组件及其制造方法 |
DE60132722T2 (de) * | 2001-12-25 | 2009-01-29 | Josuke Nakata | Lichtempfindliche oder lichtemittierende Vorrichtung |
NL1020059C2 (nl) * | 2002-02-21 | 2003-08-25 | Corus Technology B V | Werkwijze en inrichting voor het bekleden van een substraat. |
KR100652916B1 (ko) * | 2002-05-02 | 2006-12-01 | 죠스케 나카다 | 수광 또는 발광용 패널 및 그 제조 방법 |
US7198672B2 (en) * | 2002-05-13 | 2007-04-03 | Josuke Nakata | Drop tube type granular crystal producing device |
AU2002313256B8 (en) | 2002-06-21 | 2006-11-02 | Sphelar Power Corporation | Light-receiving or light-emitting device and its production method |
US7079453B2 (en) * | 2002-07-09 | 2006-07-18 | Casio Computer Co., Ltd. | Timepiece and electronic apparatus with bulb-shaped semiconductor element |
US6897085B2 (en) | 2003-01-21 | 2005-05-24 | Spheral Solar Power, Inc. | Method of fabricating an optical concentrator for a photovoltaic solar cell |
US7402747B2 (en) * | 2003-02-18 | 2008-07-22 | Kyocera Corporation | Photoelectric conversion device and method of manufacturing the device |
US7387400B2 (en) * | 2003-04-21 | 2008-06-17 | Kyosemi Corporation | Light-emitting device with spherical photoelectric converting element |
JP2004335823A (ja) * | 2003-05-09 | 2004-11-25 | Canon Inc | 光起電力素子及び光起電力素子の形成方法 |
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US20060185715A1 (en) * | 2003-07-25 | 2006-08-24 | Hammerbacher Milfred D | Photovoltaic apparatus including spherical semiconducting particles |
EP1521309A1 (de) * | 2003-10-02 | 2005-04-06 | Scheuten Glasgroep | Serienverschaltung von Solarzellen mit integrierten Halbleiterkörpern, Verfahren zur Herstellung und Photovoltaikmodul mit Serienverschaltung |
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JP4437657B2 (ja) * | 2003-10-03 | 2010-03-24 | 富士機械製造株式会社 | 光発電パネルの製造方法 |
CA2537777C (en) * | 2003-10-24 | 2011-08-02 | Kyosemi Corporation | Light receiving or emitting modular sheet and production method thereof |
EP1687853A1 (de) * | 2003-11-03 | 2006-08-09 | Sustainable Technologies International PTY Ltd | Mehrschichtige fotovoltaische einrichtung auf einer hüllenoberfläche |
US20050236030A1 (en) * | 2003-11-27 | 2005-10-27 | Kyocera Corporation | Photoelectric conversion device and method for manufacturing the same |
WO2005100893A1 (ja) * | 2004-03-31 | 2005-10-27 | Air Trick Inc. | 落下型静電浮遊炉 |
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KR100732191B1 (ko) * | 2006-04-21 | 2007-06-27 | 한국과학기술원 | 다층 반사기 구조의 고효율 발광다이오드 및 그의 제조방법 |
US20110033962A1 (en) * | 2006-04-21 | 2011-02-10 | Wavenics Inc. | High efficiency led with multi-layer reflector structure and method for fabricating the same |
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US20100126849A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Apparatus and method for forming 3d nanostructure electrode for electrochemical battery and capacitor |
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DE102009027752A1 (de) | 2009-07-15 | 2011-01-27 | Jack Green Power Gmbh | Solarmodul und Verfahren zu dessen Herstellung |
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KR102165004B1 (ko) * | 2018-11-06 | 2020-10-13 | (주)소프트피브이 | 광 발전용 파티클 유닛 및 이를 포함하는 투명 태양 전지 |
CN113707787B (zh) * | 2020-05-22 | 2023-07-18 | 重庆康佳光电技术研究院有限公司 | 球形倒装微型led及其制造方法、显示面板 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4617192A (en) * | 1982-12-21 | 1986-10-14 | At&T Bell Laboratories | Process for making optical INP devices |
JPS59121886A (ja) * | 1982-12-21 | 1984-07-14 | ウエスターン エレクトリック カムパニー,インコーポレーテッド | 光デバイス作成方法 |
JPS61220482A (ja) * | 1985-03-27 | 1986-09-30 | Mita Ind Co Ltd | 無指向性フオトダイオ−ド |
KR970000416B1 (ko) * | 1985-05-31 | 1997-01-09 | 사이언티픽 이매징 테크놀로지시 이코포레이티드 | 규소웨이퍼 보강재 및 보강방법 |
JP2659184B2 (ja) * | 1987-02-17 | 1997-09-30 | 日本電気株式会社 | シヨツトキ障壁型赤外線センサ |
JPH038455A (ja) * | 1989-06-02 | 1991-01-16 | Babcock Hitachi Kk | 粉砕分級装置 |
JPH038455U (de) * | 1989-06-12 | 1991-01-28 | ||
US5084091A (en) * | 1989-11-09 | 1992-01-28 | Crucible Materials Corporation | Method for producing titanium particles |
JPH03227577A (ja) * | 1990-02-01 | 1991-10-08 | Mitsubishi Electric Corp | 太陽電池 |
JPH04207087A (ja) * | 1990-11-30 | 1992-07-29 | Hitachi Ltd | 発光素子 |
JPH05218468A (ja) * | 1992-01-31 | 1993-08-27 | Isuzu Motors Ltd | 太陽電池 |
US5498576A (en) * | 1994-07-22 | 1996-03-12 | Texas Instruments Incorporated | Method and apparatus for affixing spheres to a foil matrix |
JPH08125210A (ja) | 1994-10-24 | 1996-05-17 | Jiyousuke Nakada | 受光素子及び受光素子アレイ並びにそれらを用いた電解装置 |
US5506053A (en) * | 1994-12-06 | 1996-04-09 | General Atomics | Radio frequency transparent infrared reflective coating materials and methods of making the same |
US6204545B1 (en) * | 1996-10-09 | 2001-03-20 | Josuke Nakata | Semiconductor device |
-
1997
- 1997-08-27 DE DE69725601T patent/DE69725601T2/de not_active Expired - Lifetime
- 1997-08-27 JP JP51076699A patent/JP3326462B2/ja not_active Expired - Fee Related
- 1997-08-27 US US09/297,207 patent/US6294822B1/en not_active Expired - Lifetime
- 1997-08-27 WO PCT/JP1997/002993 patent/WO1999010935A1/ja active IP Right Grant
- 1997-08-27 EP EP97937817A patent/EP0940860B1/de not_active Expired - Lifetime
- 1997-08-27 KR KR10-1999-7003597A patent/KR100386833B1/ko active IP Right Grant
- 1997-08-27 AU AU40313/97A patent/AU736457B2/en not_active Ceased
- 1997-08-27 CA CA002269632A patent/CA2269632C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
AU736457B2 (en) | 2001-07-26 |
KR20000068831A (ko) | 2000-11-25 |
JP3326462B2 (ja) | 2002-09-24 |
CA2269632A1 (en) | 1999-03-04 |
EP0940860A1 (de) | 1999-09-08 |
US6294822B1 (en) | 2001-09-25 |
EP0940860A4 (de) | 2000-05-17 |
DE69725601T2 (de) | 2004-04-15 |
EP0940860B1 (de) | 2003-10-15 |
CA2269632C (en) | 2003-09-02 |
WO1999010935A1 (en) | 1999-03-04 |
KR100386833B1 (ko) | 2003-06-09 |
AU4031397A (en) | 1999-03-16 |
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