CN101371365B - 受光或发光用半导体模块 - Google Patents

受光或发光用半导体模块 Download PDF

Info

Publication number
CN101371365B
CN101371365B CN2006800522950A CN200680052295A CN101371365B CN 101371365 B CN101371365 B CN 101371365B CN 2006800522950 A CN2006800522950 A CN 2006800522950A CN 200680052295 A CN200680052295 A CN 200680052295A CN 101371365 B CN101371365 B CN 101371365B
Authority
CN
China
Prior art keywords
light
solar battery
subjected
flat spring
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800522950A
Other languages
English (en)
Other versions
CN101371365A (zh
Inventor
中田仗祐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyosemi Corp
Original Assignee
Kyosemi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosemi Corp filed Critical Kyosemi Corp
Publication of CN101371365A publication Critical patent/CN101371365A/zh
Application granted granted Critical
Publication of CN101371365B publication Critical patent/CN101371365B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281Shape of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0475PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一种太阳电池模块20,在被支持基板21、外周框架、橡胶衬垫框架、和玻璃制的壳体板25所包围的内部空间收容有被排列成为8列4行的矩阵状使导电方向一致的太阳电池单元10,和剖面为大致逆U形的5片板弹簧构件22,在板弹簧构件22下端部形成有一对连接突缘部22a。在各行多个太阳电池单元10两侧配置板弹簧构件22,在该等两侧的板弹簧构件22的连接突缘部22a之间包夹8个太阳电池单元10成为并联连接,4行太阳电池单元10利用5片板弹簧构件22串联连接,而可以从正电极被膜28和负电极被膜29取出输出。

Description

受光或发光用半导体模块
技术领域
本发明有关于受光或发光用半导体模块,使具备有受光或发光功能的多个球状半导体组件电性地串联连接和并联连接,用来达成高输出化。
背景技术
本案发明人提案有如WO98/15983号公报所示的半导体组件,具有互相面对的正负电极成为包夹具有受光或发光功能的球状半导体组件的中心,也提案有太阳电池模块,其构造是设有多根用来串联连接多个半导体组件者,将该等多个半导体组件埋没在合成树脂材料之中。在该太阳电池模块中,半导体组件为球状,在表层部形成有球面状的pn接面,正负电极被设在用以形成pn接面的p型区域和n型区域的各个表面的中心部。
本案发明人提案有太阳电池模块,如WO02/35612号公报、WO02/35613号公报、WO03/017382号公报所示,其构造是将上述球状半导体组件配置成为多列多行,各列半导体组件利用焊剂或导电性接着剂进行与导电构件并联连接,各行半导体组件利用焊剂与引线构件串联连接,将该等埋入到合成树脂材料中。
本案发明人更提案有半导体模块,其构造是如WO03/036731号公报所示的具有受光或发光功能的半导体模块,将多个半导体组件埋入到合成树脂材料中。
近年来对于大气污染、地球温室效应等环保问题和石化燃料枯竭问题,增加作为可再生绿色能源的太阳电池的利用增大。从节省能源、节省资源的观点来看,作为照明光源的发光二极管的利用也一直增加。减少材料资源和制造时所消耗能量的必要性也变高。
专利文献1:WO98/15983号公报
专利文献2:WO02/35612号公报
专利文献3:WO02/35613号公报
专利文献4:WO03/017382号公报
专利文献5:WO03/036731号公报
发明内容
在现有技术的太阳电池模块和发光二极管显示器中,所采用的模块其构造是利用焊剂或导电性接着剂等将多个粒状的半导体组件连接到导电构件的同时,将全体埋入到透明的合成树脂制盖壳体(外围器)内。因此,在对太阳电池模块进行废弃处理时,不能将多个半导体组件从盖壳体分离地进行回收。因此,要从废弃的太阳电池模块和发光二极管显示器回收半导体组件和再利用会有困难,要求解决在资源和自然环境方面的顾虑。
在最近的将来,当将上述那样的半导体组件大量地供作实用时,由于劣化或寿命已到更换或废弃处理的量也必然增加,所以资源或对自然环境的负担可能变成很大。特别是在该等使用有含铅焊剂材料时,其使用要受到限制。
本发明的目的是提供受光或发光用半导体模块,可以适用作为太阳电池模块或发光模块,其中设置有多个粒状的具有受光或发光功能的半导体组件,可以使多个半导体组件再利用、再生,修理变为容易。
本发明的受光或发光用半导体模块,具有受光或发光功能,具备有:支持基板;多个粒状导体组件,具有受光或发光功能,在上述支持基板上配置成多个行,而且在导电方向被配置成对齐行的正交方向;多个板弹簧构件,具有光反射功能和导电功能,其剖面为大致逆U形的梳状,在邻接的板弹簧构件的自由端部间,以包夹各行多个半导体组件的状态,被配置成平行;以及导电连接机构,经由多个板弹簧构件并联连接各行多个半导体组件,和经由多个板弹簧构件串联连接正交于行方向的多个半导体组件。
本发明因为设有:支持基板;多个粒状半导体组件,具有受光或发光功能,在支持基板上配置多个行,而且在导电方向被配置成对齐行的正交方向;多个板弹簧构件,具有光反射功能和导电功能,其剖面为大致逆U形的梳状;利用被配置成平行的多个板弹簧构件,构建成在邻接的板弹簧构件的自由端间包夹各行的多个半导体组件,因为设有导电连接机构使各行的多个半导体组件经由多个板弹簧构件并联连接,而且使正交于行方向的多个半导体组件经由多个板弹簧构件串联连接,所以可以获得下列的效果。
利用多个板弹簧构件可以将半导体组件保持在所希望的位置,利用有效活用多个板弹簧构件的导电连接机构,可以并联连接各行的多个半导体组件,可以串联连接正交于行方向的多个半导体组件。因此,可以使多个半导体组件的定位和保持构造及多个半导体组件的串联和并联连接构造非常简单。
导电连接机构因为不需要焊接和导电性接着剂,所以制造半导体模块的设备和制造成本可以降低。当分解使用后的半导体模块时,将多个板弹簧构件解体,可以不会伤到半导体组件地进行回收,所以可以回收半导体组件和板弹簧构件,和再利用。
另外,板弹簧构件,因为表面积对其体积的比例很大,所以散热能力高,受光或发光用模块内温度上升变低,可以抑制光电变换效率和电光变换效率降低,可以提高受光或发光用模块的耐久性。
附图说明
图1是本发明实施例中凝固状态硅结晶的剖面图;
图2是将突起部切断后的硅结晶的剖面图;
图3是形成有氧化硅膜的硅结晶的剖面图;
图4是部份地除去氧化硅膜后的硅结晶的剖面图;
图5是形成有n型扩散层和pn接面的硅结晶的剖面图;
图6是形成有氧化硅被膜的硅结晶的剖面图;
图7是太阳电池单元的剖面图;
图8是实施例中太阳电池模块的支持基板的俯视图;
图9是图8的IX-IX线剖面图;
图10是外周框架和橡胶衬垫框架的俯视图;
图11是图10的XI-XI线剖面图;
图12是太阳电池模块的俯视图;
图13是图12的XIII-XIII线剖面图;
图14是太阳电池模块的主要部份扩大俯视图;
图15是图14的XV-XV线剖面图;
图16是图14的XVI-XVI线剖面图;
图17是扩大显示图15的一部份动作说明图;
图18是太阳电池模块的等效电路图;
图19是变更例与图13相当的太阳电池模块的图;
图20是变更例太阳电池模块的预先固定有多个太阳电池单元的板弹簧构件的俯视图。
其中,附图标记说明如下:
1硅结晶
1a硅结晶
1b基准面
1cp型表面
2、2a氧化硅膜
3n型层
3apn接面
4氧化硅膜
5正电极
6负电极
10太阳电池单元
20太阳电池模块
21支持基板
21a段降部
21b段升部
22板弹簧构件
22a连接突缘部
23外周框架
24橡胶衬垫框架
25壳体板
25a凸透镜部
25b凹状接合部
26导电连接机构
27凹部
28、28A正电极被膜
29、29A负电极被膜
30a~30c电极被膜
31螺栓孔
32a~32d螺栓孔
33单元配置区域
34弹性构件
35框状区域
36开口
37被膜
38螺栓孔
39螺栓/螺帽
具体实施方式
本发明有关于具备有受光或发光功能的多个粒状半导体组件的受光或发光用半导体模块,被构建成该半导体模块在废弃时或修理时,可以分离成为多个个别的半导体组件。
(实施例1)
下面说明实施例的太阳电池模块(受光用半导体模块)。根据图1~图7用来说明球状硅太阳电池单元(半导体组件)的构造及其制造方法。该球状硅太阳电池单元的构造及其制造方法因为本案发明人将其揭示在WO03/017382号公报,所以简单地进行说明。
图1是直径为1.0~2.0mm的p形球状硅结晶1(单结晶或多结晶)的剖面图。在制作粒状硅结晶1时,在被设于落下管上端侧的坩埚内熔融硅原料,从该坩埚喷嘴的前端吐出硅的液滴,使该液滴在落下管内自由落下大约14m,在落下途中利用表面张力使球状化的液滴冷却,凝固成为球状结晶,在落下管下端侧进行回收。该实施例的硅结晶1为单结晶硅,但是在其凝固过程,最后凝固的部份会有图1所示的成为突起的情况。进行研磨除去该突起部成为球状。
如图2所示,将球状的硅结晶1的表面部份研磨加工成平坦,用来形成基准面1b,作为硅结晶1a。该硅结晶1a的直径为大约1.8mm。
其次,如图3所示,利用现有技术中的热氧化方法在硅结晶1a的表面全体形成氧化硅膜2。其次,如图4所示,在基准面1b和其周边残留氧化硅膜2a,除去其以外的表面的氧化硅膜2。该氧化硅膜2a被利用作为下一个步骤进行的杂质扩散屏蔽。另外,利用屏蔽依照此种方式使氧化硅膜部份残留的进行方法为现有技术。
如图4、图5所示,以氧化硅膜2a作为扩散屏蔽,利用现有技术中的热扩散法,使n型杂质从露出的p型表面1c热扩散到其表层部,用来设置n型层3,以形成大致球面状的pn接面3a。如此一来,形成基准面1b和除去其周边的大致球面状的pn接面3a。在使n型杂质进行热扩散期间,附随产生的氧化硅膜利用现有技术中的化学蚀刻技术将其暂时除去,再度在含氧环境中进行加热,如图6所示,在硅结晶1a的全面形成指定厚度的氧化硅膜4,以其作为防止反射膜。
其次,在平坦的基准面1b(p型)和包夹硅结晶1a中心的面对基准面1b的硅结晶的前端(n型)位置,印刷以银作为主成分的糊成为点状。以高温对其进行短时间处理,贯穿氧化硅膜4,如图7所示,在p型硅基准面1b和n型层3的表面,分别形成欧姆接触的正电极5和负电极6,以获得太阳电池单元10。正电极5和负电极6位于包夹硅结晶1a中心的面对位置,硅结晶1a中心位于正电极5中心和负电极6中心的连结在线。
依照上述方式制作的粒状和球状太阳电池单元10,因为在离开硅结晶1a的表面一定深度的部位,形成球面状的pn接面3a,所以对于来自所有方向的射入光,以大致相同的受光敏感度进行光电变换。另外,在设有此种球面状的pn接面的球状发光二极管,利用从正极5输入的电能,同样地将一定的光放射到球面的所有方向。
下面根据图8~图18说明组合有多个上述球状太阳电池单元10进行串联和并联连接构造的太阳电池模块20。
如图8~图12所示,该太阳电池模块20具备有:支持基板21,被配置在下面侧;多个太阳电池单元10,在该支持基板21上被配置成4行;5个板弹簧构件22,被配置成与该4行的行方向平行;外周框架23;橡胶衬垫框架24;上端侧的光透过性壳体板25;导电连接机构26,将各行多个(例如8个)太阳电池单元并联连接,和将多行(例如4行)多个(例如32个)太阳电池单元10串联连接;和多个螺栓/螺帽39等。
在图8显示有:支持基板21;32个太阳电池单元10,在该支持基板21上被排列成为8列4行的矩阵状;凹部27被配置成为8列4行的矩阵状;正电极被膜28、负电极被膜29、和多个电极被膜30a~30c,形成在支持基板21外周部的表面;组装用螺栓孔31;和螺栓孔32a~32d,用来连接导电连接板(图中未显示)。图9是图8的IX-IX线剖面图。
32个太阳电池单元10的导电方向,朝向行的正交方向排齐,在图8中,排列成正电极5位于太阳电池单元10的右侧面中央部,负电极6位于太阳电池单元10的左侧面中央部(参照图14、图15)。另外,本实施例的太阳电池模块20为说明之便,以备置有排列成8列4行矩阵的太阳电池单元10的模块为例进行说明,但是实际上构建成的模块,组入的太阳电池单元10排列成更多的数十或数百的列数和数十或数百的行数的矩阵。
支持基板21是厚度5mm程度的白色陶瓷制的基板,但是也可以采用合成树脂制的支持基板或强化玻璃制的支持基板。在该支持基板21中央侧的单元配置区域33形成有与8列4行矩阵配置的太阳电池单元10对应的8列4行矩阵状的32个凹部27。凹部27利用喷砂或金属模具的成型而形成,但是凹部27的内面形状以使最多的光反射向太阳电池单元10的方式,成为近于大致半球面的旋转体面(例如,旋转抛物线面或旋转椭圆面)的形状,在凹部27的内面形成高光反射率的银反射膜27a。
在各个凹部27填充由具有弱黏着性、柔软性和弹性的透明合成树脂(例如,硅橡胶)构成的弹性构件34(填充材料),该弹性构件34上面,在离开支持基板21上面大致只等于太阳电池单元10的半径距离的低位置,形成水平。太阳电池单元10的正电极5和负电极6,以露出在支持基板21的上面近旁部状态,将32个太阳电池单元10的各个配置成为轻压在凹部27的弹性构件34的状态,利用弹性构件34黏着力来稳定地保持太阳电池单元10的位置。
在支持基板21中的单元配置区域33的外侧的框状区域35,印刷厚度为0.05~0.1mm的镀银的铜印刷布线,如图8所示,在该框状区域35的右侧部位和左侧部位,形成有由铜印刷布线构成的正电极被膜28和负电极被膜29,在框状区域35的前侧部位和后侧部位分别形成有3组电极被膜30a~30c,用来电连接到3个板弹簧构件22。在支持基板21的4个角部形成有组装用的对向螺栓孔31。
在支持基板21的图8的右端部和左端部形成有串联连接用螺栓孔32a、32b,当使多个太阳电池模块20在左右方向排列,经由正电极被膜28或负电极被膜29串联连接时,用来连结导电连接板(图中未显示)。在支持基板21的图8的前端部和后端部形成有并联连接用螺栓孔32c、32d,当使多个太阳电池模块20在前后方向排列,经由电极被膜30a~30c并联连接时,用来连结导电连接板(图中未显示)。
在图10、图11显示有外周框架23和橡胶衬垫框架24。外周框架23是厚度3mm程度的陶瓷制的正方形框体,形成有与单元配置区域33对应的正方形开口36,在外周框架23的下面形成有硅橡胶或丁基橡胶或氟素橡胶制被膜37(厚度大约0.1~0.2mm)。在外周框架23之上装载厚度大约1mm的丁基橡胶制橡胶衬垫框架24。在该橡胶衬垫框架24和外周框架23的4个角部,形成有组装用的螺栓孔38。因为橡胶衬垫框架24和外周框架23在支持基板21上重迭,所以在支持基板21的单元配置区域33,如图12~图16所示,组装5个板弹簧构件22。
如图12~图16所示,板弹簧构件22使用具有弹性的薄金属板(例如铍铜合金制薄金属板),制作成剖面为逆U形梳状构造,板弹簧构件22的全表面形成为高反射率的光反射面。在板弹簧构件22的下端的一对自由端部,一体形成具有微小幅度的水平接触面和微小幅度的纵向接触面的连接突缘部22a。另外,也可以依照需要,在板弹簧构件22的全表面以电镀等形成光反射被膜。
板弹簧构件22的长度形成大于单元配置区域33的前后幅度,板弹簧构件22被配置在单元配置区域33的前后电极被膜30a~30c成为架桥状,其前端部连接到前侧的电极被膜30a~30c的一个,其后端部连接到后侧的电极被膜30a~30c的一个。
在未组装有板弹簧构件22的状态下,板弹簧构件22的左右宽度(连接突缘部22a的纵向接触面间距离),被设定成比邻接的2行太阳电池单元10的正电极5和负电极6间的距离稍小。原因是因为,在板弹簧构件22组装时,防止从板弹簧构件22施加力在太阳电池单元10上的位置而产生偏移。
当在支持基板21的单元配置区域33的8列4行的矩阵状的32个凹部27,组装有32个太阳电池单元10的状态,组装外周框架23,在外周框架23上面组装与外周框架23相同形状橡胶衬垫框架24,和组装5个板弹簧构件22。
5个板弹簧构件22中的3个板弹簧构件22组装在4行太阳电池单元10的3个行间区域,1个板弹簧构件22被组装在最右行的8个太阳电池单元10与外周框架23的内周面之间,1个板弹簧构件22被组装在最左行的8个太阳电池单元10和外周框架23的内周面之间。并且,在邻接的2个板弹簧构件22的连接突缘部22a间,以包夹各行8个太阳电池单元10的状态,使各个连接突缘部22a电连接到对应的正电极5或负电极6。板弹簧构件22的图8的前后两端部被组装成为接触在对应的前后电极被膜30a~30c的状态,在其上组装光透过性壳体板25。
如图13、图15所示,壳体板25是厚度大约3mm的无色透明白色强化玻璃。在平面看,壳体板25外形与外周框架23外形相同,在壳体板25的4个角部,形成有与螺栓孔31、38对应的螺栓孔(图中未显示)。在壳体板25形成有与4行太阳电池单元10对应的4行杆状凸透镜部25a,构建成利用各个凸透镜部25a导光向各行的太阳电池单元10。在壳体板25下面中的凸透镜部25a和凸透镜部25a的边界部,形成有接合在板弹簧构件22的顶部的凹状接合部25b。
其次,使螺栓39从上方插穿于支持基板21、外周框架23、橡胶衬垫框架24、和壳体板25的4个角部的螺栓孔31、38,到达下面侧,经由结合螺帽(图中未显示),用来将该等组装成为一体。这时,经由橡胶衬垫框架24的压缩变形,因为各个板弹簧构件22接受来自壳体板25的凹状接合部25b的推压力,所以各个板弹簧构件22下端部的一对连接突缘部22a,以接触在支持基板21上面和电极被膜30a~30c、正电极被膜28、负电极被膜29等的状态下,朝向互相离开的方向移动,连接突缘部22a强力地接触在各行的太阳电池单元10的正电极5或负电极6,以确保电连接状态。
图18表示太阳电池模块20的等效电路,8列4行的太阳电池单元10被网目构造的电路串联和并联连接。一部份太阳电池单元10,即使由于故障、连接不良、或阴天等原因而使功能失效时,因为存在有迂回功能失效的太阳电池单元10的迂回电路,所以可以将没有功能失效的正常的全部太阳电池单元10的输出确实取出到外部。可以确保太阳电池模块20的可靠度。
下面说明太阳电池模块20的动作。
如图17所示,垂直射入到壳体板25和凸透镜部25a的光,主要被凸透镜部25a聚光,在板弹簧构件22的表面反射,射入到太阳电池单元10被光电变换。另外,通过太阳电池单元10之间的光,在凹部27的内面被散射,射入到太阳电池单元10被光电变换。
另外一方面,垂直射入到壳体板25和凸透镜部25a,而且射入到凸透镜部25a中心的光的大部份,直接射入到太阳电池单元10,一部份的光在凹部27的内面散射,射入到太阳电池单元10被光电变换。透过壳体板25的光,因为在壳体板25下面、板弹簧构件22外面或内面、凹部27内面、太阳电池单元10表面,重复进行多重反射,所以被太阳电池单元10吸收和被光电变换。依照此种方式,因为在封闭空间内将光有效地导光到太阳电池单元10,所以可以高效率地使输出变大。
在此处因为在壳体板25形成有与各行太阳电池单元10对应的凸透镜部25a,所以对壳体板25以倾斜状射入的光的反射程度变小,对壳体板25的光的射入角增大,使输出降低变小。而且板弹簧构件22因为表面积对其体积的比例增大,所以散热能力变高,太阳电池模块20内的温度上升变低,可以抑制太阳电池单元10光电变换效率降低,可以提高太阳电池模块20的耐久性。
下面,就以上所说明的太阳电池模块20的作用和效果进行说明。
在太阳电池模块20在使用后将其废弃的情况时,将4根螺栓39拆下,以能将支持基板21、外周框架23、橡胶衬垫框架24、壳体板25、多个板弹簧构件22、和多个太阳电池单元10零散地分解,因而可以达成太阳电池单元10、板弹簧构件22、和壳体板25等主要零件再利用,再成为资源。在太阳电池模块20修理时也同样地可以分解而简单又有效率地进行。
在太阳电池模块20因为完全不采用焊接,所以不需焊接的连接步骤,可以省略其焊接用的设置,可以节省焊接所需要的能量。而且,不会由于焊接而产生接合部的热疲劳或劣化。
在该太阳电池模块20,具有由凸透镜部25a产生的聚光功能,除此之外利用多个板弹簧构件22和由多个凹部27产生的反射作用和导光作用,可以使射入到太阳电池单元10的光量增大。因此,可以利用少数太阳电池单元10获得大的输出,可以大幅地降低太阳电池模块20的制造成本。另外,在组入有代替太阳电池单元10的发光二极管组件的发光模块的情况,也与上述同样地,可以将从发光二极管组件产生的光,有效地射出到外部。在此种情况,凹部27具有将光有效射出到外部的功能。
填充在凹部27的弹性构件34除了使光透过外,所具有的功能是在组装时对太阳电池单元10进行有效的定位和保持。
在该太阳电池模块20,用来收容太阳电池单元10的内部空间,利用支持基板21、外周框架23、橡胶衬垫框架24、被膜37、和壳体板25气密式密封成对外界隔离。因此,可以防止由于外界空气使太阳电池单元10劣化,具有优良的隔热、遮音作用。因为支持基板21为陶瓷制、壳体板25为强化玻璃制,所以太阳电池模块20的机械强度优良,因为耐热、耐火性高,所以可以适于将太阳电池模块20作为墙壁或屋顶或屋檐等的建材。
因为设有露出到太阳电池模块20外面的正电极被膜28和负电极被膜29及串联连接用螺栓孔32a、32b,所以在图12的左右方向排列多个太阳电池模块20,经由图中未显示的导电连接板简单地串联连接,可以提高输出电压。同样地,因为设有露出到太阳电池模块20外面的电极被膜30a~30c和并联连接用螺栓孔32d,所以在图12的前后方向(行方向)排列多个太阳电池模块20,经由图中未显示的导电连接板简单地并联连接,可以增大电流输出。
另外,太阳电池模块20,因为具有如图18所示将多个太阳电池单元10串并联连接成网目构造的导电连接机构26,所以即使一部份太阳电池单元10由于故障、连接不良、或阴天等原因而使功能失效时,因为存在有将功能失效的太阳电池单元10进行迂回的迂回电路,所以可以将没有功能失效的正常的全部太阳电池单元的输出确实取出到外部。可以确保太阳电池模块20的可靠度。
下面说明对上述的太阳电池模块30进行部份的变更实例。
[1]支持基板21也可以使用容易成型且能够布线的聚碳酸酯、PMMA、玻璃布基材环氧树脂、金属珐琅、绝缘基板等的任何材料构成也可。但是,最好是在其表面的全面或一部份形成具有光反射功能的反射被膜。另外,填充在凹部27的弹性构件34也可以由透明且具有黏着性的聚乙烯醇缩丁醛、乙烯醋酸乙烯共聚物的任一种构成。
[2]以可以简单串联连接多个太阳电池模块20的方式,例如,如图19所示的方式,在太阳电池模块20的支持基板21的右端部,形成段降部21a,使正电极被膜28A延长到段降部21a上面的同时,在支持基板21左端部形成下半部被除去的段升部21b,负电极被膜29A延长到段升部21b下面。
当在图12的左右方向并排地串联连接多个太阳电池模块20时,使右侧邻接的太阳电池模块20的左端的段升部21b,重迭在太阳电池模块20的段降部21a,用来使负电极被膜29A接触在正电极被膜28A,由通过串联连接用螺栓孔32a结合螺栓,用来进行电性串联连接。另外,使多个太阳电池模块20在前后方向并排地并联连接的构造可以成为与上述同样的构成。
[3]光透过性的壳体板25也可以由容易成型且不容易破裂的聚碳酸酯树脂、丙烯酸树脂、硅树脂等的合成树脂构成。另外,凸透镜部25a不是必需,可以省略,也可以使壳体板25外侧表面形成平面。
[4]也可构建成使板弹簧构件22的高度缩小,成为图示板弹簧构件22的1/2或1/3程度的高度。另外,板弹簧构件22也可以利用现有技术中的弹簧材料的碳钢、磷青铜、钨钢、镍钢、镍银、不锈钢构成。
[5]如图20所示,也可以构建成利用导电性接着剂或无铅焊料,将多个太阳电池单元10的一方电极(例如,在图标的实例为负电极6),预先固着在板弹簧构件22的一片连接突缘构件22a,在太阳电池模块20组装时,将该具有太阳电池单元19的板弹簧构件22配置在支持基板21上面。采用此种构造时,组装太阳电池模块20的组装作业变成非常简单。
当将此种构造的太阳电池模块20废弃时,因为可以如图20所示的形态回收板弹簧构件22和太阳电池单元10,所以可以维持其原来的形态再利用。另外,在需要将太阳电池单元10从板弹簧构件22分离的情况时,可以利用药液分解被上述导电性接着剂固着接着的部位,利用无铅焊剂固着的部位可以利用加热分解。
[6]外周框架23也可以由玻璃布基材环氧树脂或聚碳酸酯树脂构成。另外,橡胶衬垫框架24也可以由硅橡胶或氟系橡胶构成。
[7]代替上述球状太阳电池单元10,也可以使用WO99/10935号公报所记载的在球状芯材的表面成薄膜半导体层,而形成pn接面构造的太阳电池单元或发光二极管组件。代替上述多个太阳电池单元而组入多个发光二极管组件的模块,成为具有面发光功能的发光模块。
[8]上述实施例只是表示一实例,业者当可了解在不脱离本发明的主旨的范围内,可以对上述实施例进行部份的变更。
(产业上的可利用性)
本发明的受光或发光用半导体模块可以有效地活用在太阳电池面板或发光面板。

Claims (13)

1.一种受光或发光用半导体模块,具有受光或发光功能,其特征在于,具备有:
支持基板;
具有受光或发光功能的多个粒状半导体组件,在所述支持基板上配置成多个行,且导电方向被配置成行的正交方向;
多个板弹簧构件,具有光反射功能和导电功能,其剖面为逆U形的梳状,在邻接的板弹簧构件的自由端部间,以包夹各行的多个半导体组件的状态下,被配置成平行;以及
导电连接机构,各行多个半导体组件经由多个板弹簧构件并联连接,和正交于行方向的多个半导体组件经由多个板弹簧构件串联连接;
外周框架,将多个半导体组件和围绕多个板弹簧构件的外周侧的外周框架配置在支持基板上;以及
壳体板,为覆盖在所述多个半导体组件和多个板弹簧构件及外周框架上面的光透性的壳体板,以可解除固定的方式被固定在所述支持基板和外周框架上。
2.如权利要求1所述的受光或发光用半导体模块,其特征在于,
构建成利用所述壳体板按压多个板弹簧构件的顶部,用来确保所述导电连接机构中多个接触部的电连接。
3.如权利要求1或2所述的受光或发光用半导体模块,其特征在于,所述半导体组件形成球状,而且在正极和负极分别形成有包夹球中心的互相面对的正电极和负电极,正电极和负电极被构建成接触在所述板弹簧构件的自由端部。
4.如权利要求1或2所述的受光或发光用半导体模块,其特征在于,在所述壳体板的上表面侧部份,与多个行半导体组件对应的多个杆状凸透镜部一体成形。
5.如权利要求1或2所述的受光或发光用半导体模块,其特征在于,在所述支持基板中与多个半导体组件下方对应的部位,形成有半球状的凹陷的多个凹部,在各个凹部收容光透过性的弹性构件,所述半导体组件被配置在弹性构件的表面。
6.如权利要求2所述的受光或发光用半导体模块,其特征在于,在所述壳体板和外周框架之间,橡胶衬垫框架被设置在压缩状态。
7.如权利要求1或2所述的受光或发光用半导体模块,其特征在于,在所述支持基板的外周部上面形成有朝向外周框架的外侧突出而作为所述半导体模块的正极和负极的正电极被膜和负电极被膜。
8.如权利要求1或2所述的受光或发光用半导体模块,其特征在于,在所述支持基板的外周部上面,沿行方向在所述外周框架两端的外侧突起且分别与多个板弹簧构件电连接的多个电极被膜。
9.如权利要求2所述的受光或发光用半导体模块,其特征在于,在所述板弹簧构件下端的一对自由端部,分别形成有用来与半导体组件的正电极或负电极接触的连接突缘部。
10.如权利要求1或2所述的受光或发光用半导体模块,其特征在于,在所述壳体板内面形成有分别用来与多个板弹簧构件的顶部抵接的多个凹状接合部。
11.如权利要求3所述的受光或发光用半导体模块,其特征在于,所述各行半导体组件的正电极或负电极,在电连接到板弹簧构件的自由端部的状态下被预先固定,在所述受光或发光用半导体模块组装时,设置所述具有半导体组件的板弹簧构件。
12.如权利要求1或2所述的受光或发光用半导体模块,其特征在于,所述半导体模块为太阳电池模块。
13.如权利要求1或2所述的受光或发光用半导体模块,其特征在于,所述半导体模块为发光二极管模块。
CN2006800522950A 2006-02-06 2006-02-06 受光或发光用半导体模块 Expired - Fee Related CN101371365B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2006/301990 WO2007091294A1 (ja) 2006-02-06 2006-02-06 受光又は発光用半導体モジュール

Publications (2)

Publication Number Publication Date
CN101371365A CN101371365A (zh) 2009-02-18
CN101371365B true CN101371365B (zh) 2010-04-07

Family

ID=38344902

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800522950A Expired - Fee Related CN101371365B (zh) 2006-02-06 2006-02-06 受光或发光用半导体模块

Country Status (8)

Country Link
US (1) US7947894B2 (zh)
EP (1) EP1983577A1 (zh)
JP (1) JP4861343B2 (zh)
KR (1) KR101203601B1 (zh)
CN (1) CN101371365B (zh)
AU (1) AU2006337843B2 (zh)
CA (1) CA2640083A1 (zh)
WO (1) WO2007091294A1 (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8395568B2 (en) * 2007-05-31 2013-03-12 Nthdegree Technologies Worldwide Inc Light emitting, photovoltaic or other electronic apparatus and system
KR100981685B1 (ko) * 2007-10-19 2010-09-10 재단법인서울대학교산학협력재단 마이크로렌즈를 이용한 태양전지 장치 및 그 제조 방법
DE102008011153B4 (de) * 2007-11-27 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen
KR20090081950A (ko) * 2008-01-25 2009-07-29 삼성전자주식회사 태양 전지 및 그 제조 방법
DE102008040147A1 (de) * 2008-07-03 2010-01-28 Crystalsol Og Verfahren zur Herstellung einer Monokornmembran für eine Solarzelle sowie Monokornmembran nebst Solarzelle
DE102009006184A1 (de) * 2009-01-27 2010-07-29 Vishay Electronic Gmbh Beleuchtungseinheit
JP5493075B2 (ja) * 2009-02-24 2014-05-14 株式会社クリーンベンチャー21 集光型太陽電池およびこれを用いた追尾型太陽電池装置
US8633376B2 (en) * 2009-09-21 2014-01-21 The Boeing Company Photovoltaic concentrator assembly with optically active cover
TWI420682B (zh) * 2010-02-26 2013-12-21 Pacific Speed Ltd Photoelectric conversion device
US20110253194A1 (en) * 2010-04-14 2011-10-20 Chien-Feng Lin Photoelectric conversion
US20120012148A1 (en) * 2010-07-19 2012-01-19 Sunsera, Inc. High surface area photovoltaic systems
JP2012028686A (ja) * 2010-07-27 2012-02-09 Nitto Denko Corp 発光装置の検査方法および発光装置の検査後の処理方法
NL2005944C2 (en) * 2010-12-31 2012-07-03 M H Mensink Beheer B V Solar panel, solar cell converter and method of manufacturing a solar panel.
US9406817B2 (en) * 2012-09-13 2016-08-02 International Business Machines Corporation Lead frame package for solar concentrators
US20140069491A1 (en) * 2012-09-13 2014-03-13 King Abdulaziz City For Science And Technology Interposer Connector for High Power Solar Concentrators
WO2015143903A1 (zh) * 2014-03-27 2015-10-01 李蓬勃 太阳能电池组件
CN104953940B (zh) * 2014-03-27 2017-10-27 李蓬勃 太阳能电池组件
US10454412B2 (en) * 2015-07-31 2019-10-22 International Business Machines Corporation Tunable photonic harvesting for solar energy conversion and dynamic shading tolerance
US20170112387A1 (en) * 2015-10-26 2017-04-27 Shreya Venkatesh Body temperature detection and control
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
USD948840S1 (en) 2019-03-18 2022-04-19 Polyshot Corporation Dual material pet treat
USD903227S1 (en) 2019-08-26 2020-12-01 Polyshot Corporation Toothbrush shaped pet treat

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1210815C (zh) * 2000-11-24 2005-07-13 珂琳21风险投资株式会社 一种光电设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4126812A (en) * 1976-12-20 1978-11-21 Texas Instruments Incorporated Spherical light emitting diode element and character display with integral reflector
CA2239626C (en) 1996-10-09 2003-09-02 Josuke Nakata Semiconductor device
WO1999010935A1 (en) 1997-08-27 1999-03-04 Josuke Nakata Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material
JP2000022184A (ja) 1998-07-03 2000-01-21 Nippon Telegr & Teleph Corp <Ntt> 球状または棒状結晶太陽電池およびその製造方法
JP4276758B2 (ja) * 1999-12-09 2009-06-10 仗祐 中田 球状半導体素子を用いた発電装置および球状半導体素子を用いた発光装置
JP3436723B2 (ja) * 2000-03-23 2003-08-18 株式会社三井ハイテック 太陽電池の製造方法及び太陽電池
WO2002035612A1 (en) 2000-10-20 2002-05-02 Josuke Nakata Light-emitting or light-receiving semiconductor device and method for fabricating the same
US7205626B1 (en) 2000-10-20 2007-04-17 Josuke Nakata Light-emitting or light-receiving with plurality of particle-shaped semiconductor devices having light-emitting or light-receiving properties
JP3490969B2 (ja) * 2000-11-24 2004-01-26 圭弘 浜川 光発電装置
AU2001277778B2 (en) * 2001-08-13 2005-04-07 Sphelar Power Corporation Light-emitting or light-receiving semiconductor module and method of its manufacture
EP1445804A4 (en) 2001-10-19 2008-03-05 Josuke Nakata LIGHT EMISSION OR LIGHT RECEPTACLE SEMICONDUCTOR MODULE AND METHOD FOR THE PRODUCTION THEREOF
EP1553638B1 (en) * 2002-06-21 2008-12-10 Kyosemi Corporation Light receiving or light emitting device and its production method
JP2004063564A (ja) * 2002-07-25 2004-02-26 Clean Venture 21:Kk 光電変換装置とその製造方法
US7394016B2 (en) * 2005-10-11 2008-07-01 Solyndra, Inc. Bifacial elongated solar cell devices with internal reflectors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1210815C (zh) * 2000-11-24 2005-07-13 珂琳21风险投资株式会社 一种光电设备

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2001-168369A 2001.06.22
JP特开2001-267609A 2001.09.28

Also Published As

Publication number Publication date
KR101203601B1 (ko) 2012-11-21
KR20080097392A (ko) 2008-11-05
CA2640083A1 (en) 2007-08-16
WO2007091294A1 (ja) 2007-08-16
CN101371365A (zh) 2009-02-18
JP4861343B2 (ja) 2012-01-25
EP1983577A1 (en) 2008-10-22
US7947894B2 (en) 2011-05-24
JPWO2007091294A1 (ja) 2009-06-25
AU2006337843B2 (en) 2011-06-23
US20090025780A1 (en) 2009-01-29
AU2006337843A1 (en) 2007-08-16

Similar Documents

Publication Publication Date Title
CN101371365B (zh) 受光或发光用半导体模块
KR100619614B1 (ko) 발광 또는 수광용 반도체 모듈 및 그 제조 방법
CN101305474B (zh) 受光或发光用半导体模块
CN1219331C (zh) 发光或受光用半导体模块及其制造方法
KR100633519B1 (ko) 수광 또는 발광용 반도체 장치
JP3902210B2 (ja) 受光又は発光用パネルおよびその製造方法
CN101507001B (zh) 发电或发光用半导体模块
US20070175509A1 (en) Solar battery module
CN1470080A (zh) 半导体器件及其制造方法
CA2537777A1 (en) Light receiving or emitting modular sheet and production method thereof
MX2011006182A (es) Modulo de celda solar y metodo para su produccion.
JP4444937B2 (ja) 発光又は受光用半導体モジュール
TWI297958B (en) Semiconductor device for light-receiving or light-emitting

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100407

Termination date: 20120206