CN101507001B - 发电或发光用半导体模块 - Google Patents
发电或发光用半导体模块 Download PDFInfo
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- CN101507001B CN101507001B CN200680055555XA CN200680055555A CN101507001B CN 101507001 B CN101507001 B CN 101507001B CN 200680055555X A CN200680055555X A CN 200680055555XA CN 200680055555 A CN200680055555 A CN 200680055555A CN 101507001 B CN101507001 B CN 101507001B
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- semiconductor
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2006/315600 WO2008018116A1 (en) | 2006-08-07 | 2006-08-07 | Semiconductor module for power generation or light emission |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101507001A CN101507001A (zh) | 2009-08-12 |
CN101507001B true CN101507001B (zh) | 2012-09-19 |
Family
ID=39032661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200680055555XA Expired - Fee Related CN101507001B (zh) | 2006-08-07 | 2006-08-07 | 发电或发光用半导体模块 |
Country Status (10)
Country | Link |
---|---|
US (1) | US8552519B2 (zh) |
EP (1) | EP2065947A4 (zh) |
JP (1) | JP5108766B2 (zh) |
KR (1) | KR101217039B1 (zh) |
CN (1) | CN101507001B (zh) |
AU (1) | AU2006347099B2 (zh) |
CA (1) | CA2658781A1 (zh) |
HK (1) | HK1130564A1 (zh) |
TW (1) | TWI315587B (zh) |
WO (1) | WO2008018116A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2006335660B2 (en) * | 2006-01-11 | 2012-01-19 | Sphelar Power Corporation | Semiconductor module for light reception or light emission |
JP5340656B2 (ja) * | 2008-07-02 | 2013-11-13 | シャープ株式会社 | 太陽電池アレイ |
JP5180307B2 (ja) * | 2008-08-08 | 2013-04-10 | 京セミ株式会社 | 採光型太陽電池モジュール |
KR101072073B1 (ko) * | 2009-06-30 | 2011-10-10 | 엘지이노텍 주식회사 | 태양광 발전장치 |
KR101091505B1 (ko) | 2009-11-03 | 2011-12-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US20120027515A1 (en) * | 2010-01-05 | 2012-02-02 | Neugent Timothy L | Solar module system and method of making the same |
JP2012028686A (ja) * | 2010-07-27 | 2012-02-09 | Nitto Denko Corp | 発光装置の検査方法および発光装置の検査後の処理方法 |
WO2012026013A1 (ja) * | 2010-08-26 | 2012-03-01 | 京セミ株式会社 | 半導体素子付き織網基材の製造方法、その製造装置及び半導体素子付き織網基材 |
ITRM20110439A1 (it) * | 2011-08-11 | 2013-02-12 | Alfredo Chiacchieroni | Deposito brevetto d'invenzione dal titolo "modulo fotovoltaico a diodi a emissione luminosa" |
US20150092360A1 (en) * | 2013-10-01 | 2015-04-02 | Nike, Inc. | Battery overmolding |
EP2858120A1 (en) * | 2013-10-04 | 2015-04-08 | Alfredo Chiacchieroni | LED module for the conversion of sunlight or artificial light into electrical energy and method for manufacturing the same |
WO2015200093A1 (en) * | 2014-06-25 | 2015-12-30 | Sage Electrochromics, Inc. | Solar powered device with scalable size and power capacity |
EP3242989A4 (en) | 2015-01-06 | 2018-12-12 | Sage Electrochromics, Inc. | Set of window assemblies and a method of fabricating the same |
CN109804471A (zh) * | 2016-09-20 | 2019-05-24 | 株式会社钟化 | 玻璃建材 |
US10972047B2 (en) * | 2017-02-27 | 2021-04-06 | International Business Machines Corporation | Photovoltaic module |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003036731A1 (en) * | 2001-10-19 | 2003-05-01 | Josuke Nakata | Light emitting or light receiving semiconductor module and method for manufacturing the same |
JP2004093602A (ja) * | 2002-08-29 | 2004-03-25 | Casio Comput Co Ltd | 太陽電池付き表示装置 |
CN1625812A (zh) * | 2002-05-02 | 2005-06-08 | 中田仗祐 | 受光或发光用面板及其制造方法 |
CN1771608A (zh) * | 2003-10-24 | 2006-05-10 | 京半导体股份有限公司 | 受光或发光模块板及其制造方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL270665A (zh) * | 1960-10-31 | 1900-01-01 | ||
US3984256A (en) * | 1975-04-25 | 1976-10-05 | Nasa | Photovoltaic cell array |
FR2327643A1 (fr) | 1975-10-09 | 1977-05-06 | Commissariat Energie Atomique | Convertisseur d'energie lumineuse en energie electrique |
FR2417188A1 (fr) | 1978-02-08 | 1979-09-07 | Commissariat Energie Atomique | Convertisseur photovoltaique d'energie solaire |
JPS59125670A (ja) * | 1983-01-06 | 1984-07-20 | Toppan Printing Co Ltd | 太陽電池 |
US4638110A (en) * | 1985-06-13 | 1987-01-20 | Illuminated Data, Inc. | Methods and apparatus relating to photovoltaic semiconductor devices |
US4834805A (en) * | 1987-09-24 | 1989-05-30 | Wattsun, Inc. | Photovoltaic power modules and methods for making same |
EP0601613A1 (en) * | 1992-12-11 | 1994-06-15 | Shin-Etsu Chemical Co., Ltd. | Silicon solar cell |
EP0641029A3 (de) * | 1993-08-27 | 1998-01-07 | Twin Solar-Technik Entwicklungs-GmbH | Element einer photovoltaischen Solarzelle und Verfahren zu seiner Herstellung sowie deren Anordnung in einer Solarzelle |
JPH07221335A (ja) | 1993-12-09 | 1995-08-18 | Tonen Corp | 太陽電池モジュール |
US5437736A (en) * | 1994-02-15 | 1995-08-01 | Cole; Eric D. | Semiconductor fiber solar cells and modules |
JPH07335925A (ja) * | 1994-06-03 | 1995-12-22 | Hitachi Ltd | 太陽電池 |
US5482568A (en) * | 1994-06-28 | 1996-01-09 | Hockaday; Robert G. | Micro mirror photovoltaic cells |
JPH09162434A (ja) | 1995-12-05 | 1997-06-20 | Hitachi Ltd | 太陽電池およびその製造方法 |
US5720827A (en) * | 1996-07-19 | 1998-02-24 | University Of Florida | Design for the fabrication of high efficiency solar cells |
KR100377825B1 (ko) * | 1996-10-09 | 2003-07-16 | 나가다 죠스게 | 반도체디바이스 |
CA2239626C (en) | 1996-10-09 | 2003-09-02 | Josuke Nakata | Semiconductor device |
US6057505A (en) * | 1997-11-21 | 2000-05-02 | Ortabasi; Ugur | Space concentrator for advanced solar cells |
JP2000022184A (ja) | 1998-07-03 | 2000-01-21 | Nippon Telegr & Teleph Corp <Ntt> | 球状または棒状結晶太陽電池およびその製造方法 |
US6440769B2 (en) * | 1999-11-26 | 2002-08-27 | The Trustees Of Princeton University | Photovoltaic device with optical concentrator and method of making the same |
JP3436723B2 (ja) | 2000-03-23 | 2003-08-18 | 株式会社三井ハイテック | 太陽電池の製造方法及び太陽電池 |
CN1182590C (zh) | 2000-10-20 | 2004-12-29 | 中田仗祐 | 发光或者受光用半导体器件及其制造方法 |
EP1255303B1 (en) * | 2000-10-20 | 2016-06-29 | Sphelar Power Corporation | Light-emitting or light-detecting semiconductor module and method of manufacture thereof |
CA2456671C (en) * | 2001-08-13 | 2009-09-22 | Josuke Nakata | Light emitting or light receiving semiconductor module and making method thereof |
WO2003017383A1 (en) * | 2001-08-13 | 2003-02-27 | Josuke Nakata | Semiconductor device and method of its manufacture |
US20030077849A1 (en) * | 2001-10-19 | 2003-04-24 | Yet-Zen Liu | Method for fabricating ohmic contact layer in semiconductor devices |
US6717045B2 (en) * | 2001-10-23 | 2004-04-06 | Leon L. C. Chen | Photovoltaic array module design for solar electric power generation systems |
DK1553638T3 (da) | 2002-06-21 | 2009-03-30 | Kyosemi Corp | Lysmodtagende eller lysemitterende anordning og fremgangsmåde til fremstilling deraf |
AU2004317236B2 (en) | 2004-03-12 | 2008-05-22 | Sphelar Power Corporation | Multilayer solar cell |
AU2006335660B2 (en) * | 2006-01-11 | 2012-01-19 | Sphelar Power Corporation | Semiconductor module for light reception or light emission |
-
2006
- 2006-08-07 AU AU2006347099A patent/AU2006347099B2/en not_active Ceased
- 2006-08-07 KR KR1020097003880A patent/KR101217039B1/ko not_active IP Right Cessation
- 2006-08-07 EP EP06782442A patent/EP2065947A4/en not_active Withdrawn
- 2006-08-07 CN CN200680055555XA patent/CN101507001B/zh not_active Expired - Fee Related
- 2006-08-07 JP JP2008528668A patent/JP5108766B2/ja not_active Expired - Fee Related
- 2006-08-07 WO PCT/JP2006/315600 patent/WO2008018116A1/ja active Application Filing
- 2006-08-07 US US12/309,455 patent/US8552519B2/en not_active Expired - Fee Related
- 2006-08-07 CA CA002658781A patent/CA2658781A1/en not_active Abandoned
- 2006-09-25 TW TW095135325A patent/TWI315587B/zh not_active IP Right Cessation
-
2009
- 2009-11-09 HK HK09110425.5A patent/HK1130564A1/xx not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003036731A1 (en) * | 2001-10-19 | 2003-05-01 | Josuke Nakata | Light emitting or light receiving semiconductor module and method for manufacturing the same |
CN1625812A (zh) * | 2002-05-02 | 2005-06-08 | 中田仗祐 | 受光或发光用面板及其制造方法 |
JP2004093602A (ja) * | 2002-08-29 | 2004-03-25 | Casio Comput Co Ltd | 太陽電池付き表示装置 |
CN1771608A (zh) * | 2003-10-24 | 2006-05-10 | 京半导体股份有限公司 | 受光或发光模块板及其制造方法 |
Also Published As
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AU2006347099B2 (en) | 2013-01-17 |
US8552519B2 (en) | 2013-10-08 |
TWI315587B (en) | 2009-10-01 |
JPWO2008018116A1 (ja) | 2009-12-24 |
JP5108766B2 (ja) | 2012-12-26 |
CA2658781A1 (en) | 2008-02-14 |
EP2065947A4 (en) | 2012-09-19 |
TW200810139A (en) | 2008-02-16 |
AU2006347099A1 (en) | 2008-02-14 |
US20100006865A1 (en) | 2010-01-14 |
KR101217039B1 (ko) | 2013-01-11 |
EP2065947A1 (en) | 2009-06-03 |
CN101507001A (zh) | 2009-08-12 |
KR20090037959A (ko) | 2009-04-16 |
HK1130564A1 (en) | 2009-12-31 |
WO2008018116A1 (en) | 2008-02-14 |
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