DE3684200D1 - Strahlungsempfindliche kunststoffzusammensetzung. - Google Patents
Strahlungsempfindliche kunststoffzusammensetzung.Info
- Publication number
- DE3684200D1 DE3684200D1 DE8686306125T DE3684200T DE3684200D1 DE 3684200 D1 DE3684200 D1 DE 3684200D1 DE 8686306125 T DE8686306125 T DE 8686306125T DE 3684200 T DE3684200 T DE 3684200T DE 3684200 D1 DE3684200 D1 DE 3684200D1
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- plastic composition
- sensitive plastic
- sensitive
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/16—Chemical modification with polymerisable compounds
- C08J7/18—Chemical modification with polymerisable compounds using wave energy or particle radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/0085—Azides characterised by the non-macromolecular additives
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17339685 | 1985-08-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3684200D1 true DE3684200D1 (de) | 1992-04-16 |
Family
ID=15959629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686306125T Expired - Lifetime DE3684200D1 (de) | 1985-08-07 | 1986-08-07 | Strahlungsempfindliche kunststoffzusammensetzung. |
Country Status (5)
Families Citing this family (147)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62123444A (ja) * | 1985-08-07 | 1987-06-04 | Japan Synthetic Rubber Co Ltd | ポジ型感放射線性樹脂組成物 |
DE3780387T2 (de) * | 1986-09-18 | 1993-01-28 | Japan Synthetic Rubber Co Ltd | Herstellungsverfahren einer integrierten schaltung. |
US5128230A (en) * | 1986-12-23 | 1992-07-07 | Shipley Company Inc. | Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate |
ES2202389T3 (es) * | 1986-12-23 | 2004-04-01 | Shipley Company Inc. | Composicnes fotorresistentes de alta resolucion. |
JPS63178228A (ja) * | 1987-01-20 | 1988-07-22 | Fuji Photo Film Co Ltd | ポジ型フオトレジスト組成物 |
JPH07117746B2 (ja) * | 1987-04-16 | 1995-12-18 | 富士写真フイルム株式会社 | 感光性平版印刷版の製造方法 |
JPH0196646A (ja) * | 1987-10-09 | 1989-04-14 | Hitachi Ltd | フオトレジスト組成物 |
US4886728A (en) * | 1988-01-06 | 1989-12-12 | Olin Hunt Specialty Products Inc. | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
NO891063L (no) * | 1988-03-31 | 1989-10-02 | Thiokol Morton Inc | Novolakharpikser av blandede aldehyder og positive fotoresistmaterialer fremstilt fra slike harpikser. |
US4920028A (en) * | 1988-03-31 | 1990-04-24 | Morton Thiokol, Inc. | High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone |
US4996122A (en) * | 1988-03-31 | 1991-02-26 | Morton International, Inc. | Method of forming resist pattern and thermally stable and highly resolved resist pattern |
NO891062L (no) * | 1988-03-31 | 1989-10-02 | Thiokol Morton Inc | Positiv fotofoelsom sammensetning. |
US4997734A (en) * | 1988-08-02 | 1991-03-05 | Morton International, Inc. | Method of forming a thermally stable mixed aldehyde novolak resin containing resist pattern and that pattern on a substrate |
US5130409A (en) * | 1988-04-22 | 1992-07-14 | Morton International, Inc. | Mixed aldehyde novolak resins useful as high contrast high thermal stability positive photoresists |
EP0349301A3 (en) * | 1988-06-28 | 1990-12-27 | Mitsubishi Kasei Corporation | Positive-type photoresist composition |
JPH063544B2 (ja) * | 1988-07-07 | 1994-01-12 | 住友化学工業株式会社 | ポジ型感放射線性レジスト組成物 |
US5456996A (en) * | 1988-07-07 | 1995-10-10 | Sumitomo Chemical Company, Limited | Radiation-sensitive positive resist composition |
US5001040A (en) * | 1988-07-11 | 1991-03-19 | Olin Hunt Specialty Products Inc. | Process of forming resist image in positive photoresist with thermally stable phenolic resin |
US4959292A (en) * | 1988-07-11 | 1990-09-25 | Olin Hunt Specialty Products Inc. | Light-sensitive o-quinone diazide composition and product with phenolic novolak prepared by condensation with haloacetoaldehyde |
US4943511A (en) * | 1988-08-05 | 1990-07-24 | Morton Thiokol, Inc. | High sensitivity mid and deep UV resist |
WO1990003597A1 (en) * | 1988-09-30 | 1990-04-05 | Macdermid, Incorporated | Soft-bake treatment of photoresists |
US4965167A (en) * | 1988-11-10 | 1990-10-23 | Olin Hunt Specialty Products, Inc. | Positive-working photoresist employing a selected mixture of ethyl lactate and ethyl 3-ethoxy propionate as casting solvent |
US5063138A (en) * | 1988-11-10 | 1991-11-05 | Ocg Microelectronic Materials, Inc. | Positive-working photoresist process employing a selected mixture of ethyl lactate and ethyl 3-ethoxy propionate as casting solvent during photoresist coating |
JPH03127067A (ja) * | 1989-10-13 | 1991-05-30 | Sumitomo Chem Co Ltd | ポジ型感放射線性レジスト組成物 |
ATE178329T1 (de) * | 1989-10-16 | 1999-04-15 | Us Health | Totale synthese von northebain-, normorphin-, noroxymorphon-enantiomeren und -derivaten via n- nor-zwischenverbindungen |
JPH04328747A (ja) * | 1991-03-27 | 1992-11-17 | Internatl Business Mach Corp <Ibm> | 均一にコートされたフォトレジスト組成物 |
JP3139088B2 (ja) * | 1991-04-26 | 2001-02-26 | 住友化学工業株式会社 | ポジ型レジスト組成物 |
TW213532B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1991-07-26 | 1993-09-21 | Mitsubishi Gas Chemical Co | |
TW267219B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1991-12-27 | 1996-01-01 | Sumitomo Chemical Co | |
KR100341563B1 (ko) * | 1992-03-23 | 2002-10-25 | 제이에스알 가부시끼가이샤 | 레지스트도포조성물 |
JP3619261B2 (ja) | 1993-06-15 | 2005-02-09 | 三菱レイヨン株式会社 | 溶剤組成物 |
JP3364727B2 (ja) * | 1993-10-22 | 2003-01-08 | イハラケミカル工業株式会社 | 2,2−ビス(3,5−ジ置換−4−ヒドロキシフェニル)プロパン誘導体とその製造方法およびこの誘導体を用いるピロガロールの製造法 |
JPH07271023A (ja) * | 1994-04-01 | 1995-10-20 | Toagosei Co Ltd | ポジ型フォトレジスト組成物 |
JPH07301917A (ja) * | 1994-04-28 | 1995-11-14 | Tokuyama Sekiyu Kagaku Kk | ポジ型感放射線性樹脂組成物 |
US5977034A (en) * | 1994-08-19 | 1999-11-02 | Lifenet Research Foundation | Composition for cleaning bones |
FI100932B (fi) * | 1995-04-12 | 1998-03-13 | Nokia Telecommunications Oy | Äänitaajuussignaalien lähetys radiopuhelinjärjestelmässä |
DE19533608A1 (de) * | 1995-09-11 | 1997-03-13 | Basf Ag | Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen |
JP3057010B2 (ja) * | 1996-08-29 | 2000-06-26 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターンの形成方法 |
US5910559A (en) * | 1996-12-18 | 1999-06-08 | Clariant Finance (Bvi) Limited | Fractionated novolak resin from cresol-formaldehyde reaction mixture and photoresist composition therefrom |
JP3365318B2 (ja) | 1998-08-12 | 2003-01-08 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
US6200891B1 (en) * | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
KR100498440B1 (ko) * | 1999-11-23 | 2005-07-01 | 삼성전자주식회사 | 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물 |
KR100786596B1 (ko) | 1999-12-29 | 2007-12-21 | 엑손모빌 케미칼 패턴츠 인코포레이티드 | 에스테르 함유 유체 조성물 |
CN1436175A (zh) * | 2000-04-03 | 2003-08-13 | 布里斯托尔-迈尔斯斯奎布药品公司 | 作为Aβ-蛋白生产抑制剂的环状内酰胺 |
JP4838437B2 (ja) * | 2000-06-16 | 2011-12-14 | Jsr株式会社 | 感放射線性樹脂組成物 |
KR100760146B1 (ko) * | 2000-09-18 | 2007-09-18 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 |
JP4438218B2 (ja) * | 2000-11-16 | 2010-03-24 | Jsr株式会社 | 感放射線性樹脂組成物 |
US7582226B2 (en) * | 2000-12-22 | 2009-09-01 | Exxonmobil Chemical Patents Inc. | Ester-containing fluid compositions |
US6838225B2 (en) | 2001-01-18 | 2005-01-04 | Jsr Corporation | Radiation-sensitive resin composition |
US7192681B2 (en) | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
US7531286B2 (en) * | 2002-03-15 | 2009-05-12 | Jsr Corporation | Radiation-sensitive resin composition |
JP4048824B2 (ja) * | 2002-05-09 | 2008-02-20 | Jsr株式会社 | 感放射線性樹脂組成物 |
KR100955454B1 (ko) | 2002-05-31 | 2010-04-29 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
TWI314943B (en) * | 2002-08-29 | 2009-09-21 | Radiation-sensitive resin composition | |
JP3937996B2 (ja) * | 2002-10-08 | 2007-06-27 | Jsr株式会社 | 感放射性樹脂組成物 |
KR20040092550A (ko) * | 2003-04-24 | 2004-11-04 | 클라리언트 인터내셔널 리미티드 | 레지스트 조성물 및 레지스트 제거용 유기용제 |
WO2005027145A1 (ja) * | 2003-09-11 | 2005-03-24 | Nagase Chemtex Corporation | 感放射線性樹脂組成物 |
JP4612999B2 (ja) | 2003-10-08 | 2011-01-12 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4140506B2 (ja) * | 2003-10-28 | 2008-08-27 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP4448705B2 (ja) | 2004-02-05 | 2010-04-14 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
JP4551704B2 (ja) | 2004-07-08 | 2010-09-29 | 富士フイルム株式会社 | 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法 |
JP4621451B2 (ja) | 2004-08-11 | 2011-01-26 | 富士フイルム株式会社 | 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法 |
JP4524154B2 (ja) | 2004-08-18 | 2010-08-11 | 富士フイルム株式会社 | 化学増幅型レジスト組成物及びそれを用いたパターン形成方法 |
EP1637927A1 (en) | 2004-09-02 | 2006-03-22 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern forming method using the same |
JP4469692B2 (ja) | 2004-09-14 | 2010-05-26 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法 |
JP4474256B2 (ja) | 2004-09-30 | 2010-06-02 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
JP4452632B2 (ja) | 2005-01-24 | 2010-04-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
US7947421B2 (en) | 2005-01-24 | 2011-05-24 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
JP4562537B2 (ja) | 2005-01-28 | 2010-10-13 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
JP4439409B2 (ja) | 2005-02-02 | 2010-03-24 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
TWI471699B (zh) | 2005-03-04 | 2015-02-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
US7960087B2 (en) | 2005-03-11 | 2011-06-14 | Fujifilm Corporation | Positive photosensitive composition and pattern-forming method using the same |
JP4579019B2 (ja) | 2005-03-17 | 2010-11-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法 |
EP1720072B1 (en) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
JP4724465B2 (ja) | 2005-05-23 | 2011-07-13 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
TWI411877B (zh) * | 2005-06-15 | 2013-10-11 | Jsr Corp | A photosensitive resin composition, a display panel spacer, and a display panel |
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JP4911456B2 (ja) | 2006-11-21 | 2012-04-04 | 富士フイルム株式会社 | ポジ型感光性組成物、該ポジ型感光性組成物に用いられる高分子化合物、該高分子化合物の製造方法及びポジ型感光性組成物を用いたパターン形成方法 |
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EP1962139A1 (en) | 2007-02-23 | 2008-08-27 | FUJIFILM Corporation | Negative resist composition and pattern forming method using the same |
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JP5066405B2 (ja) | 2007-08-02 | 2012-11-07 | 富士フイルム株式会社 | 電子線、x線又はeuv用レジスト組成物及び該組成物を用いたパターン形成方法 |
US8110333B2 (en) | 2007-08-03 | 2012-02-07 | Fujifilm Corporation | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound |
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CN115362412A (zh) | 2020-03-30 | 2022-11-18 | 富士胶片株式会社 | 感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法、电子器件的制造方法、光掩模制造用感光化射线性或感放射线性树脂组合物及光掩模的制造方法 |
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-
1986
- 1986-06-30 JP JP61153849A patent/JPS62123444A/ja active Granted
- 1986-08-06 KR KR1019860006477A patent/KR910007224B1/ko not_active Expired
- 1986-08-07 DE DE8686306125T patent/DE3684200D1/de not_active Expired - Lifetime
- 1986-08-07 EP EP86306125A patent/EP0211667B1/en not_active Expired - Lifetime
- 1986-08-07 EP EP19910111608 patent/EP0457367A1/en not_active Withdrawn
-
1989
- 1989-08-06 KR KR1019890014650A patent/KR910007223B1/ko not_active Expired
-
1994
- 1994-02-15 US US08/196,497 patent/US5405720A/en not_active Expired - Lifetime
- 1994-12-16 US US08/357,400 patent/US5494784A/en not_active Expired - Lifetime
-
1997
- 1997-09-15 US US08/929,894 patent/US5925492A/en not_active Expired - Fee Related
-
1999
- 1999-01-27 US US09/237,660 patent/US6020104A/en not_active Expired - Fee Related
- 1999-10-08 US US09/414,724 patent/US6228554B1/en not_active Expired - Fee Related
-
2000
- 2000-08-16 US US09/638,955 patent/US6270939B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS62123444A (ja) | 1987-06-04 |
EP0211667B1 (en) | 1992-03-11 |
EP0211667A3 (en) | 1987-09-09 |
US5405720A (en) | 1995-04-11 |
EP0457367A1 (en) | 1991-11-21 |
KR910009134A (ko) | 1991-05-31 |
JPH0322619B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-03-27 |
US5925492A (en) | 1999-07-20 |
KR910007223B1 (ko) | 1991-09-20 |
KR910007224B1 (ko) | 1991-09-20 |
EP0211667A2 (en) | 1987-02-25 |
US6270939B1 (en) | 2001-08-07 |
KR870002181A (ko) | 1987-03-30 |
US6228554B1 (en) | 2001-05-08 |
US5494784A (en) | 1996-02-27 |
US6020104A (en) | 2000-02-01 |
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