ATE526322T1 - Polymerisierbare verbindung, lactonhaltige verbindung, verfahren zur herstellung der lactonhaltigen verbindung und durch polymerisierung der polymerisierbaren verbindung erhaltene polymerverbindung - Google Patents
Polymerisierbare verbindung, lactonhaltige verbindung, verfahren zur herstellung der lactonhaltigen verbindung und durch polymerisierung der polymerisierbaren verbindung erhaltene polymerverbindungInfo
- Publication number
- ATE526322T1 ATE526322T1 AT09178830T AT09178830T ATE526322T1 AT E526322 T1 ATE526322 T1 AT E526322T1 AT 09178830 T AT09178830 T AT 09178830T AT 09178830 T AT09178830 T AT 09178830T AT E526322 T1 ATE526322 T1 AT E526322T1
- Authority
- AT
- Austria
- Prior art keywords
- group
- bond
- polymerizable compound
- compound
- lactone
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D307/93—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems condensed with a ring other than six-membered
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D407/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group C07D405/00
- C07D407/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group C07D405/00 containing two hetero rings
- C07D407/12—Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group C07D405/00 containing two hetero rings linked by a chain containing hetero atoms as chain links
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
- C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
- C07D493/08—Bridged systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
- C07D493/12—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains three hetero rings
- C07D493/18—Bridged systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/12—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
- C07D495/18—Bridged systems
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F24/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008317754 | 2008-12-12 | ||
| JP2008317752 | 2008-12-12 | ||
| JP2008317751 | 2008-12-12 | ||
| JP2009054291 | 2009-03-06 | ||
| JP2009091616 | 2009-04-03 | ||
| JP2009122470 | 2009-05-20 | ||
| JP2009131275 | 2009-05-29 | ||
| JP2009167004 | 2009-07-15 | ||
| JP2009251478 | 2009-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE526322T1 true ATE526322T1 (de) | 2011-10-15 |
Family
ID=41510612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09178830T ATE526322T1 (de) | 2008-12-12 | 2009-12-11 | Polymerisierbare verbindung, lactonhaltige verbindung, verfahren zur herstellung der lactonhaltigen verbindung und durch polymerisierung der polymerisierbaren verbindung erhaltene polymerverbindung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8771916B2 (de) |
| EP (2) | EP2196462B1 (de) |
| KR (1) | KR101794035B1 (de) |
| AT (1) | ATE526322T1 (de) |
| WO (1) | WO2010067905A2 (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1795960B1 (de) * | 2005-12-09 | 2019-06-05 | Fujifilm Corporation | Positive Resistzusammensetzung, Verfahren zur Musterbildung unter Verwendung der positiven Resistzusammensetzung, Verwendung der positiven Resistzusammensetzung |
| US8795944B2 (en) * | 2008-12-12 | 2014-08-05 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition |
| JP5523854B2 (ja) * | 2009-02-06 | 2014-06-18 | 住友化学株式会社 | 化学増幅型フォトレジスト組成物及びパターン形成方法 |
| JP5568354B2 (ja) * | 2009-03-31 | 2014-08-06 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
| EP2433178A4 (de) * | 2009-05-22 | 2012-11-21 | Fujifilm Corp | Gegenüber aktinischer strahlung empfindliche harzzusammensetzung und strukturbildungsverfahren mithilfe der zusammensetzung |
| JP5439124B2 (ja) * | 2009-11-11 | 2014-03-12 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法 |
| JP5719536B2 (ja) * | 2010-07-13 | 2015-05-20 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法 |
| TWI521018B (zh) | 2010-07-14 | 2016-02-11 | Jsr股份有限公司 | Poly Silicon alumoxane composition and pattern forming method |
| JP5780029B2 (ja) * | 2010-07-14 | 2015-09-16 | Jsr株式会社 | ポリシロキサン組成物及びパターン形成方法 |
| JP5802369B2 (ja) * | 2010-07-29 | 2015-10-28 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法 |
| JP5538120B2 (ja) * | 2010-07-30 | 2014-07-02 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、膜及び該組成物を用いたパターン形成方法 |
| JP5608474B2 (ja) * | 2010-08-27 | 2014-10-15 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法 |
| US8865389B2 (en) * | 2010-09-28 | 2014-10-21 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern |
| JP5712099B2 (ja) | 2010-09-28 | 2015-05-07 | 富士フイルム株式会社 | レジスト組成物、並びに、それを用いたレジスト膜及びパターン形成方法 |
| JP5966403B2 (ja) * | 2011-04-05 | 2016-08-10 | 住友化学株式会社 | 塩、レジスト組成物及びレジストパターンの製造方法 |
| JP6012377B2 (ja) * | 2012-09-28 | 2016-10-25 | 東京応化工業株式会社 | レジストパターン形成方法 |
| WO2018066247A1 (ja) * | 2016-10-04 | 2018-04-12 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JPWO2019188595A1 (ja) * | 2018-03-26 | 2020-12-03 | 富士フイルム株式会社 | 感光性樹脂組成物及びその製造方法、レジスト膜、パターン形成方法、並びに、電子デバイスの製造方法 |
Family Cites Families (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2150691C2 (de) | 1971-10-12 | 1982-09-09 | Basf Ag, 6700 Ludwigshafen | Lichtempfindliches Gemisch und Verwendung eines lichtempfindlichen Gemisches zur Herstellung einer Flachdruckplatte |
| US3779778A (en) | 1972-02-09 | 1973-12-18 | Minnesota Mining & Mfg | Photosolubilizable compositions and elements |
| DE2922746A1 (de) | 1979-06-05 | 1980-12-11 | Basf Ag | Positiv arbeitendes schichtuebertragungsmaterial |
| US5073476A (en) | 1983-05-18 | 1991-12-17 | Ciba-Geigy Corporation | Curable composition and the use thereof |
| JPS61226746A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
| JPS61226745A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
| JPS62153853A (ja) | 1985-12-27 | 1987-07-08 | Toshiba Corp | 感光性組成物 |
| JPS62123444A (ja) | 1985-08-07 | 1987-06-04 | Japan Synthetic Rubber Co Ltd | ポジ型感放射線性樹脂組成物 |
| JPS6269263A (ja) | 1985-09-24 | 1987-03-30 | Toshiba Corp | 感光性組成物 |
| EP0219294B1 (de) | 1985-10-08 | 1989-03-01 | Mitsui Petrochemical Industries, Ltd. | Triphenol und daraus hergestellte Polycarbonatpolymere |
| JPH083630B2 (ja) | 1986-01-23 | 1996-01-17 | 富士写真フイルム株式会社 | 感光性組成物 |
| JPS6326653A (ja) | 1986-07-21 | 1988-02-04 | Tosoh Corp | フオトレジスト材 |
| JPS6334540A (ja) | 1986-07-30 | 1988-02-15 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
| JPS63146038A (ja) | 1986-12-10 | 1988-06-18 | Toshiba Corp | 感光性組成物 |
| JPS63146029A (ja) | 1986-12-10 | 1988-06-18 | Toshiba Corp | 感光性組成物 |
| GB8630129D0 (en) | 1986-12-17 | 1987-01-28 | Ciba Geigy Ag | Formation of image |
| CA1296925C (en) | 1988-04-07 | 1992-03-10 | Patrick Bermingham | Test system for caissons and piles |
| US4916210A (en) | 1988-10-20 | 1990-04-10 | Shell Oil Company | Resin from alpha, alpha', alpha"-tris(4-cyanatophenyl)-1,3,5-triisopropylbenzene |
| DE3914407A1 (de) | 1989-04-29 | 1990-10-31 | Basf Ag | Strahlungsempfindliche polymere und positiv arbeitendes aufzeichnungsmaterial |
| JP2717602B2 (ja) | 1990-01-16 | 1998-02-18 | 富士写真フイルム株式会社 | 感光性組成物 |
| JP2711590B2 (ja) | 1990-09-13 | 1998-02-10 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
| US5296330A (en) | 1991-08-30 | 1994-03-22 | Ciba-Geigy Corp. | Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive |
| US5576143A (en) | 1991-12-03 | 1996-11-19 | Fuji Photo Film Co., Ltd. | Light-sensitive composition |
| JP2753921B2 (ja) | 1992-06-04 | 1998-05-20 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
| JP3300448B2 (ja) | 1993-02-12 | 2002-07-08 | 株式会社東芝 | 編集装置及び編集信号復号化装置 |
| JP3112229B2 (ja) | 1993-06-30 | 2000-11-27 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
| JP3224115B2 (ja) | 1994-03-17 | 2001-10-29 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
| DE69525883T2 (de) | 1994-07-04 | 2002-10-31 | Fuji Photo Film Co., Ltd. | Positiv-photoresistzusammensetzung |
| JPH0862834A (ja) | 1994-08-22 | 1996-03-08 | Mitsubishi Chem Corp | フォトレジスト組成物 |
| JPH095988A (ja) | 1995-06-21 | 1997-01-10 | Mitsubishi Chem Corp | 感放射線性塗布組成物 |
| JP3562599B2 (ja) | 1995-08-18 | 2004-09-08 | 大日本インキ化学工業株式会社 | フォトレジスト組成物 |
| JP2002090991A (ja) | 2000-09-13 | 2002-03-27 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
| JP2002277862A (ja) | 2001-03-21 | 2002-09-25 | Nippon Hoso Kyokai <Nhk> | 液晶光変調器及びそれを用いた表示装置 |
| JP4186054B2 (ja) | 2002-04-05 | 2008-11-26 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| US6866983B2 (en) * | 2002-04-05 | 2005-03-15 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
| JP4533660B2 (ja) | 2004-05-14 | 2010-09-01 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
| EP1720072B1 (de) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Zusammensetzungen und Verfahren für Immersionslithografie |
| US7812105B2 (en) * | 2005-05-11 | 2010-10-12 | Jsr Corporation | Compound, polymer, and radiation-sensitive composition |
| JP4861767B2 (ja) * | 2005-07-26 | 2012-01-25 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| TWI403843B (zh) * | 2005-09-13 | 2013-08-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
| JP4861781B2 (ja) * | 2005-09-13 | 2012-01-25 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| WO2007037213A1 (ja) | 2005-09-28 | 2007-04-05 | Daicel Chemical Industries, Ltd. | シアノ基及びラクトン骨格を含む多環式エステル |
| JP5070814B2 (ja) | 2005-11-21 | 2012-11-14 | 住友化学株式会社 | 化学増幅型レジスト組成物の酸発生剤用の塩 |
| JP4831307B2 (ja) | 2005-12-02 | 2011-12-07 | 信越化学工業株式会社 | 新規なエステル化合物、高分子化合物、レジスト材料及びパターン形成方法 |
| JP4691442B2 (ja) * | 2005-12-09 | 2011-06-01 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| TWI479266B (zh) * | 2005-12-27 | 2015-04-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
| JP4871718B2 (ja) | 2005-12-27 | 2012-02-08 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| JP4539865B2 (ja) | 2006-01-06 | 2010-09-08 | 信越化学工業株式会社 | ラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
| JP4858714B2 (ja) | 2006-10-04 | 2012-01-18 | 信越化学工業株式会社 | 高分子化合物、レジスト材料、及びパターン形成方法 |
| KR101116963B1 (ko) * | 2006-10-04 | 2012-03-14 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고분자 화합물, 레지스트 재료, 및 패턴 형성 방법 |
| JP5009015B2 (ja) | 2007-03-22 | 2012-08-22 | 株式会社ダイセル | 電子吸引性置換基及びラクトン骨格を含む多環式エステル及びその高分子化合物、フォトレジスト組成物 |
| US7998654B2 (en) * | 2007-03-28 | 2011-08-16 | Fujifilm Corporation | Positive resist composition and pattern-forming method |
| JP2009054291A (ja) | 2007-08-23 | 2009-03-12 | Toyota Motor Corp | 燃料電池 |
| JP5493260B2 (ja) | 2007-10-09 | 2014-05-14 | Jfeスチール株式会社 | 溶融金属めっき鋼帯製造装置及び溶融金属めっき鋼帯の製造方法 |
| JP2009122470A (ja) | 2007-11-16 | 2009-06-04 | Sumitomo Chemical Co Ltd | 集光層付き光拡散板 |
| JP2009167004A (ja) | 2008-01-18 | 2009-07-30 | Mitsubishi Electric Corp | エレベーターの操作表示装置及びメンテナンス装置 |
| JP5398248B2 (ja) * | 2008-02-06 | 2014-01-29 | 東京応化工業株式会社 | 液浸露光用レジスト組成物およびそれを用いたレジストパターン形成方法 |
| JP2009251478A (ja) | 2008-04-10 | 2009-10-29 | Ricoh Co Ltd | 現像装置、プロセスユニット及び画像形成装置 |
| JP5227223B2 (ja) | 2009-03-11 | 2013-07-03 | 株式会社セルシード | 細胞培養支持体 |
| JP5624786B2 (ja) * | 2009-03-31 | 2014-11-12 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びに該組成物を用いたレジスト膜及びパターン形成方法 |
| EP2470958B1 (de) * | 2009-08-28 | 2019-05-01 | FUJIFILM Corporation | Gegenüber aktinischer strahlung empfindliche harzzusammensetzung und strukturbildungsverfahren mithilfe der zusammensetzung |
| US12216608B2 (en) | 2023-02-24 | 2025-02-04 | Nvidia Corporation | Authenticated control sequences to initialize sensors over a multi-target interface bus |
-
2009
- 2009-12-11 EP EP09178830A patent/EP2196462B1/de active Active
- 2009-12-11 EP EP09788098.3A patent/EP2356517B1/de active Active
- 2009-12-11 KR KR1020117013343A patent/KR101794035B1/ko active Active
- 2009-12-11 WO PCT/JP2009/071189 patent/WO2010067905A2/en not_active Ceased
- 2009-12-11 AT AT09178830T patent/ATE526322T1/de not_active IP Right Cessation
- 2009-12-11 US US13/139,074 patent/US8771916B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010067905A2 (en) | 2010-06-17 |
| KR20110098736A (ko) | 2011-09-01 |
| US20110236828A1 (en) | 2011-09-29 |
| EP2356517B1 (de) | 2017-01-25 |
| WO2010067905A3 (en) | 2011-01-27 |
| EP2196462B1 (de) | 2011-09-28 |
| KR101794035B1 (ko) | 2017-11-06 |
| US8771916B2 (en) | 2014-07-08 |
| EP2356517A2 (de) | 2011-08-17 |
| EP2196462A1 (de) | 2010-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE526322T1 (de) | Polymerisierbare verbindung, lactonhaltige verbindung, verfahren zur herstellung der lactonhaltigen verbindung und durch polymerisierung der polymerisierbaren verbindung erhaltene polymerverbindung | |
| ATE512186T1 (de) | Fluorhaltiges acrylat | |
| ATE513837T1 (de) | Fluorinhaltige acrylatquerverweise | |
| MX2010012199A (es) | Compuesto de cromeno. | |
| AR061548A1 (es) | 3-aminopirrolidino-4-lactamas sustituidas como inhibidoras de dipeptidilpeptidasa iv (dpp-iv), composiciones farmaceuticas que las comprenden y el uso de las mismas en el tratamiento de la diabetes ii. | |
| MEP10709A (en) | 2-ARYL-6-PHENYLIMIDAZO[1,2-alpha]PYRIDINE DERIVATIVES, PREPARATION THEREOF AND THERAPEUTIC USE THEREOF | |
| ATE500312T1 (de) | Flüssigkristallines medium | |
| EA201000017A1 (ru) | Предварительная композиция серного цемента и способ приготовления предварительной композиции серного цемента | |
| NI201200051A (es) | Nuevos maitansinoides y el uso de dichos maitansonoides para preparar conjugados con un anticuerpo. | |
| WO2009057769A1 (ja) | 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 | |
| EA201390949A1 (ru) | Новый способ бурения подземных полостей | |
| AR085920A1 (es) | Derivados benzimidazolicos utiles como agentes antitumorales y composiciones farmaceuticas que los contienen | |
| RU2016105801A (ru) | Смоляная смесь, строительный раствор из реактивной смолы, многокомпонентная система строительного раствора и их применение | |
| AR044715A1 (es) | Compuestos tipo amidas que inhiben la reabsorcion de las monoaminas | |
| CO6351789A2 (es) | Derivados de carbamatos de alquiltiazoles, su preparacion y su aplicacion en terapeutica | |
| TW201129552A (en) | Salt and photoresist composition containing the same | |
| WO2008105138A1 (ja) | ポリチオウレタン系光学材料用重合触媒、それを含む重合性組成物、それより得られる光学材料、およびその製造方法 | |
| BR112013024223A2 (pt) | composto de poliéter, agente de cura usando o composto de poliéter, e método de produção do composto de poliéter | |
| CY1115635T1 (el) | Παραγωγα 2-πυριδιν-2-υλο-πυραζολ-3(2η)-ονης, η παρασκευη τους και η εφαρμογη τους στη θεραπευτικη | |
| ATE530514T1 (de) | Verfahren zur herstellung von alpha,beta- ungesättigten ethern | |
| WO2008087967A1 (ja) | 酸化型環状フェノール硫化物の製造方法 | |
| EA201070010A1 (ru) | Производные 7-алкинил-1,8-нафтиридонов, их получение и их применение в терапии | |
| WO2012139076A3 (en) | Fluoroalkylalkoxylates | |
| ATE527228T1 (de) | Verfahren zur herstellung von beta-santalol und derivaten davon | |
| WO2010002528A3 (en) | Hydrofluoroacetal compounds and processes for their preparation and use |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |