DE102006024654A1 - Integriertes Halbleiterschaltkreisbauelement und Verfahren zur Herstellung desselben - Google Patents

Integriertes Halbleiterschaltkreisbauelement und Verfahren zur Herstellung desselben Download PDF

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Publication number
DE102006024654A1
DE102006024654A1 DE102006024654A DE102006024654A DE102006024654A1 DE 102006024654 A1 DE102006024654 A1 DE 102006024654A1 DE 102006024654 A DE102006024654 A DE 102006024654A DE 102006024654 A DE102006024654 A DE 102006024654A DE 102006024654 A1 DE102006024654 A1 DE 102006024654A1
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DE
Germany
Prior art keywords
layer
vuv
semiconductor substrate
dielectric layer
blocking layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102006024654A
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German (de)
English (en)
Inventor
Dong-ryul Suwon Chang
Tae-jung Yongin Lee
Sung-hoan Suwon Kim
Soo-Cheol Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102006024654A1 publication Critical patent/DE102006024654A1/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE102006024654A 2005-06-08 2006-05-22 Integriertes Halbleiterschaltkreisbauelement und Verfahren zur Herstellung desselben Ceased DE102006024654A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2005-0049016 2005-06-08
KR1020050049016A KR100703971B1 (ko) 2005-06-08 2005-06-08 반도체 집적 회로 장치 및 그 제조 방법

Publications (1)

Publication Number Publication Date
DE102006024654A1 true DE102006024654A1 (de) 2007-02-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006024654A Ceased DE102006024654A1 (de) 2005-06-08 2006-05-22 Integriertes Halbleiterschaltkreisbauelement und Verfahren zur Herstellung desselben

Country Status (6)

Country Link
US (3) US7304387B2 (enExample)
JP (2) JP2006344956A (enExample)
KR (1) KR100703971B1 (enExample)
CN (1) CN1877834B (enExample)
DE (1) DE102006024654A1 (enExample)
TW (1) TWI302377B (enExample)

Cited By (1)

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CN104425542B (zh) * 2013-08-26 2017-08-04 昆山工研院新型平板显示技术中心有限公司 一种有机发光显示装置及其制备方法
CA2932901A1 (en) * 2014-02-26 2015-09-03 Halliburton Energy Services, Inc. Protein-based fibrous bridging material and process and system for treating a wellbore
CN105374740B (zh) * 2014-08-29 2018-10-23 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
JP2016162848A (ja) * 2015-02-27 2016-09-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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CN110021559B (zh) * 2018-01-09 2021-08-24 联华电子股份有限公司 半导体元件及其制作方法
JP7719608B2 (ja) * 2021-02-08 2025-08-06 ローム株式会社 半導体素子、当該半導体素子を備えた半導体装置、および、半導体素子の製造方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018107927A1 (de) * 2018-03-28 2019-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Verbindungsstruktur für Logikschaltkreis
US10916498B2 (en) 2018-03-28 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure for logic circuit
DE102018107927B4 (de) 2018-03-28 2022-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Verbindungsstruktur für Logikschaltkreis
US11581256B2 (en) 2018-03-28 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure for logic circuit
US11955425B2 (en) 2018-03-28 2024-04-09 Taiwan Semiconducotr Manufacturing Co., Ltd. Interconnect structure for logic circuit

Also Published As

Publication number Publication date
JP2006344956A (ja) 2006-12-21
US8058185B2 (en) 2011-11-15
US20060278949A1 (en) 2006-12-14
US20080057689A1 (en) 2008-03-06
US20120032269A1 (en) 2012-02-09
KR100703971B1 (ko) 2007-04-06
CN1877834B (zh) 2010-09-29
US7304387B2 (en) 2007-12-04
TWI302377B (en) 2008-10-21
JP2013145901A (ja) 2013-07-25
KR20060127687A (ko) 2006-12-13
CN1877834A (zh) 2006-12-13
TW200721451A (en) 2007-06-01

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