CN1877834B - 半导体集成电路器件及其制造方法 - Google Patents

半导体集成电路器件及其制造方法 Download PDF

Info

Publication number
CN1877834B
CN1877834B CN2006100916013A CN200610091601A CN1877834B CN 1877834 B CN1877834 B CN 1877834B CN 2006100916013 A CN2006100916013 A CN 2006100916013A CN 200610091601 A CN200610091601 A CN 200610091601A CN 1877834 B CN1877834 B CN 1877834B
Authority
CN
China
Prior art keywords
layer
vacuum ultraviolet
dielectric layer
semiconductor device
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2006100916013A
Other languages
English (en)
Chinese (zh)
Other versions
CN1877834A (zh
Inventor
张东烈
李泰政
金成焕
李受哲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1877834A publication Critical patent/CN1877834A/zh
Application granted granted Critical
Publication of CN1877834B publication Critical patent/CN1877834B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2006100916013A 2005-06-08 2006-06-06 半导体集成电路器件及其制造方法 Active CN1877834B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR49016/05 2005-06-08
KR1020050049016A KR100703971B1 (ko) 2005-06-08 2005-06-08 반도체 집적 회로 장치 및 그 제조 방법

Publications (2)

Publication Number Publication Date
CN1877834A CN1877834A (zh) 2006-12-13
CN1877834B true CN1877834B (zh) 2010-09-29

Family

ID=37510211

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006100916013A Active CN1877834B (zh) 2005-06-08 2006-06-06 半导体集成电路器件及其制造方法

Country Status (6)

Country Link
US (3) US7304387B2 (enExample)
JP (2) JP2006344956A (enExample)
KR (1) KR100703971B1 (enExample)
CN (1) CN1877834B (enExample)
DE (1) DE102006024654A1 (enExample)
TW (1) TWI302377B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100688023B1 (ko) * 2005-12-28 2007-02-27 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US20080173985A1 (en) * 2007-01-24 2008-07-24 International Business Machines Corporation Dielectric cap having material with optical band gap to substantially block uv radiation during curing treatment, and related methods
KR100878402B1 (ko) * 2007-07-25 2009-01-13 삼성전기주식회사 다층 배선을 구비한 반도체 장치 및 그 형성 방법
KR100922560B1 (ko) * 2007-09-28 2009-10-21 주식회사 동부하이텍 플래시 메모리 소자 및 그의 제조 방법
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
CN101989574B (zh) * 2009-08-06 2012-10-31 中芯国际集成电路制造(上海)有限公司 应变记忆作用的半导体器件制造方法
CN102376754A (zh) * 2010-08-19 2012-03-14 中芯国际集成电路制造(上海)有限公司 半导体器件结构及制作该半导体器件结构的方法
US20120261767A1 (en) * 2011-04-14 2012-10-18 Intersil Americas Inc. Method and structure for reducing gate leakage current and positive bias temperature instability drift
CN103021999B (zh) * 2011-09-27 2015-06-03 中芯国际集成电路制造(上海)有限公司 半导体结构及其制作方法
US8785997B2 (en) 2012-05-16 2014-07-22 Infineon Technologies Ag Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device
JP2014165191A (ja) * 2013-02-21 2014-09-08 Seiko Instruments Inc 紫外線消去型の不揮発性半導体装置
CN104425542B (zh) * 2013-08-26 2017-08-04 昆山工研院新型平板显示技术中心有限公司 一种有机发光显示装置及其制备方法
US20160289528A1 (en) * 2014-02-26 2016-10-06 Halliburton Energy Services, Inc. Protein-based fibrous bridging material and process and system for treating a wellbore
CN105374740B (zh) * 2014-08-29 2018-10-23 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
JP2016162848A (ja) * 2015-02-27 2016-09-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102258112B1 (ko) * 2015-04-01 2021-05-31 삼성전자주식회사 반도체 소자 및 이의 제조 방법
WO2017111847A1 (en) * 2015-12-24 2017-06-29 Intel Corporation Techniques for forming electrically conductive features with improved alignment and capacitance reduction
CN110021559B (zh) * 2018-01-09 2021-08-24 联华电子股份有限公司 半导体元件及其制作方法
US10916498B2 (en) 2018-03-28 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure for logic circuit
JP7719608B2 (ja) * 2021-02-08 2025-08-06 ローム株式会社 半導体素子、当該半導体素子を備えた半導体装置、および、半導体素子の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1198592A (zh) * 1997-04-23 1998-11-11 日本电气株式会社 半导体器件
CN1388582A (zh) * 2001-05-25 2003-01-01 株式会社东芝 半导体器件
US6881619B1 (en) * 2003-12-23 2005-04-19 Macronix International Co. Method for fabricating a non-volatile memory and metal interconnect process

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292477A (ja) * 1985-10-18 1987-04-27 Nec Corp 半導体記憶装置の製造方法
JPS6325931A (ja) * 1986-07-18 1988-02-03 Hitachi Ltd 半導体集積回路装置
JPH02292865A (ja) * 1989-05-02 1990-12-04 Hitachi Ltd 半導体集積回路装置
JPH04273168A (ja) * 1991-02-27 1992-09-29 Ricoh Co Ltd 不揮発性半導体メモリ装置
US5559044A (en) * 1992-09-21 1996-09-24 Siliconix Incorporated BiCDMOS process technology
KR100308497B1 (ko) 1994-12-30 2001-12-15 박종섭 다층배선형성방법
JP3772916B2 (ja) * 1996-03-07 2006-05-10 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JPH1098162A (ja) 1996-09-20 1998-04-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP3612913B2 (ja) * 1996-12-29 2005-01-26 ソニー株式会社 半導体装置の製造方法
JP3610745B2 (ja) * 1996-11-28 2005-01-19 ソニー株式会社 層間絶縁膜の形成方法
JPH10173046A (ja) * 1996-12-10 1998-06-26 Sony Corp 半導体装置の製造方法
JPH10335458A (ja) * 1997-05-30 1998-12-18 Nec Corp 半導体装置及びその製造方法
WO2000046809A1 (en) * 1999-02-01 2000-08-10 Hitachi, Ltd. Semiconductor integrated circuit and nonvolatile memory element
GB2358285A (en) * 1999-08-30 2001-07-18 Lucent Technologies Inc Interlevel dielectrics
JP4031158B2 (ja) 1999-09-27 2008-01-09 株式会社東芝 半導体装置
US6548343B1 (en) * 1999-12-22 2003-04-15 Agilent Technologies Texas Instruments Incorporated Method of fabricating a ferroelectric memory cell
JP4493779B2 (ja) * 2000-01-31 2010-06-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2001230186A (ja) 2000-02-17 2001-08-24 Hitachi Ltd 半導体集積回路装置の製造方法
KR100342359B1 (ko) 2000-04-03 2002-07-04 문학용 화물적재용 리프터
KR20020002570A (ko) * 2000-06-30 2002-01-10 박종섭 반응성 이온식각에 의한 강유전체 캐패시터 특성 저하를방지할 수 있는 강유전체 메모리 소자 제조 방법
JP2003017564A (ja) * 2001-07-04 2003-01-17 Fujitsu Ltd 半導体装置およびその製造方法
JP3726760B2 (ja) * 2002-02-20 2005-12-14 セイコーエプソン株式会社 半導体装置の製造方法
JP3640186B2 (ja) * 2002-03-06 2005-04-20 セイコーエプソン株式会社 半導体装置の製造方法
KR100471164B1 (ko) * 2002-03-26 2005-03-09 삼성전자주식회사 금속-절연체-금속 캐패시터를 갖는 반도체장치 및 그제조방법
US6774432B1 (en) 2003-02-05 2004-08-10 Advanced Micro Devices, Inc. UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL
US6924241B2 (en) * 2003-02-24 2005-08-02 Promos Technologies, Inc. Method of making a silicon nitride film that is transmissive to ultraviolet light
JP3833189B2 (ja) * 2003-05-27 2006-10-11 株式会社リコー 半導体装置及びその製造方法
JP4545401B2 (ja) * 2003-07-22 2010-09-15 パナソニック株式会社 半導体装置の製造方法
US7045414B2 (en) * 2003-11-26 2006-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating high voltage transistor
JP4813778B2 (ja) * 2004-06-30 2011-11-09 富士通セミコンダクター株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1198592A (zh) * 1997-04-23 1998-11-11 日本电气株式会社 半导体器件
CN1388582A (zh) * 2001-05-25 2003-01-01 株式会社东芝 半导体器件
US6881619B1 (en) * 2003-12-23 2005-04-19 Macronix International Co. Method for fabricating a non-volatile memory and metal interconnect process

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
全文.

Also Published As

Publication number Publication date
JP2006344956A (ja) 2006-12-21
JP2013145901A (ja) 2013-07-25
US20060278949A1 (en) 2006-12-14
TWI302377B (en) 2008-10-21
US20120032269A1 (en) 2012-02-09
TW200721451A (en) 2007-06-01
US7304387B2 (en) 2007-12-04
CN1877834A (zh) 2006-12-13
US20080057689A1 (en) 2008-03-06
US8058185B2 (en) 2011-11-15
KR20060127687A (ko) 2006-12-13
KR100703971B1 (ko) 2007-04-06
DE102006024654A1 (de) 2007-02-01

Similar Documents

Publication Publication Date Title
US8058185B2 (en) Method of fabricating semiconductor integrated circuit device
CN102456750B (zh) 用于提高电容器容量和兼容性的方法和装置
CN102290378B (zh) 半导体装置及其制造方法
US6498089B2 (en) Semiconductor integrated circuit device with moisture-proof ring and its manufacture method
US6611024B2 (en) Method of forming PID protection diode for SOI wafer
US8395239B2 (en) Grounded seal ring structure in semiconductor devices
US20100078695A1 (en) Low Leakage Capacitors Including Portions in Inter-Layer Dielectrics
US10014251B2 (en) Semiconductor device with self-protecting fuse and method of fabricating the same
US8815679B1 (en) Structure of metal gate MIM
US9905633B1 (en) Structure and formation method of semiconductor device structure
CN104733430A (zh) 形成金属-绝缘体-金属(mim)电容器结构的机理
US20180026091A1 (en) Resistor Structure
CN100370623C (zh) 半导体器件及其制造方法
US9461069B2 (en) Systems and methods for integrating different channel materials into a CMOS circuit by using a semiconductor structure having multiple transistor layers
US20060284219A1 (en) Semiconductor integrated circuit device method of fabricating the same
Ang et al. PLASMA INDUCED DAMAGE OF HIGH DENSITY PLASMA FSG IN 0.18 UM TECHNOLOGY NODE

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant