JP2006344956A - 半導体集積回路装置及びそれの製造方法 - Google Patents

半導体集積回路装置及びそれの製造方法 Download PDF

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Publication number
JP2006344956A
JP2006344956A JP2006156332A JP2006156332A JP2006344956A JP 2006344956 A JP2006344956 A JP 2006344956A JP 2006156332 A JP2006156332 A JP 2006156332A JP 2006156332 A JP2006156332 A JP 2006156332A JP 2006344956 A JP2006344956 A JP 2006344956A
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Prior art keywords
film
integrated circuit
circuit device
semiconductor integrated
insulating film
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JP2006156332A
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English (en)
Japanese (ja)
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JP2006344956A5 (enExample
Inventor
Dong-Ryul Jang
張　東烈
Tae-Jung Lee
李　泰政
Sung-Hoan Kim
成煥 金
Soo-Cheol Lee
李　受哲
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006344956A publication Critical patent/JP2006344956A/ja
Publication of JP2006344956A5 publication Critical patent/JP2006344956A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006156332A 2005-06-08 2006-06-05 半導体集積回路装置及びそれの製造方法 Withdrawn JP2006344956A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050049016A KR100703971B1 (ko) 2005-06-08 2005-06-08 반도체 집적 회로 장치 및 그 제조 방법

Related Child Applications (1)

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JP2013037641A Division JP2013145901A (ja) 2005-06-08 2013-02-27 半導体集積回路装置

Publications (2)

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JP2006344956A true JP2006344956A (ja) 2006-12-21
JP2006344956A5 JP2006344956A5 (enExample) 2009-07-23

Family

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JP2006156332A Withdrawn JP2006344956A (ja) 2005-06-08 2006-06-05 半導体集積回路装置及びそれの製造方法
JP2013037641A Pending JP2013145901A (ja) 2005-06-08 2013-02-27 半導体集積回路装置

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Country Status (6)

Country Link
US (3) US7304387B2 (enExample)
JP (2) JP2006344956A (enExample)
KR (1) KR100703971B1 (enExample)
CN (1) CN1877834B (enExample)
DE (1) DE102006024654A1 (enExample)
TW (1) TWI302377B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517307A (ja) * 2007-01-24 2010-05-20 インターナショナル・ビジネス・マシーンズ・コーポレーション 誘電体キャップ層
WO2014129252A1 (ja) 2013-02-21 2014-08-28 セイコーインスツル株式会社 紫外線消去型の不揮発性半導体装置
JP2022121116A (ja) * 2021-02-08 2022-08-19 ローム株式会社 半導体素子、当該半導体素子を備えた半導体装置、および、半導体素子の製造方法

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KR100688023B1 (ko) * 2005-12-28 2007-02-27 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
KR100878402B1 (ko) * 2007-07-25 2009-01-13 삼성전기주식회사 다층 배선을 구비한 반도체 장치 및 그 형성 방법
KR100922560B1 (ko) * 2007-09-28 2009-10-21 주식회사 동부하이텍 플래시 메모리 소자 및 그의 제조 방법
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
CN101989574B (zh) * 2009-08-06 2012-10-31 中芯国际集成电路制造(上海)有限公司 应变记忆作用的半导体器件制造方法
CN102376754A (zh) * 2010-08-19 2012-03-14 中芯国际集成电路制造(上海)有限公司 半导体器件结构及制作该半导体器件结构的方法
US20120261767A1 (en) * 2011-04-14 2012-10-18 Intersil Americas Inc. Method and structure for reducing gate leakage current and positive bias temperature instability drift
CN103021999B (zh) * 2011-09-27 2015-06-03 中芯国际集成电路制造(上海)有限公司 半导体结构及其制作方法
US8785997B2 (en) 2012-05-16 2014-07-22 Infineon Technologies Ag Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device
CN104425542B (zh) * 2013-08-26 2017-08-04 昆山工研院新型平板显示技术中心有限公司 一种有机发光显示装置及其制备方法
US20160289528A1 (en) * 2014-02-26 2016-10-06 Halliburton Energy Services, Inc. Protein-based fibrous bridging material and process and system for treating a wellbore
CN105374740B (zh) * 2014-08-29 2018-10-23 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
JP2016162848A (ja) * 2015-02-27 2016-09-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102258112B1 (ko) * 2015-04-01 2021-05-31 삼성전자주식회사 반도체 소자 및 이의 제조 방법
WO2017111847A1 (en) * 2015-12-24 2017-06-29 Intel Corporation Techniques for forming electrically conductive features with improved alignment and capacitance reduction
CN110021559B (zh) * 2018-01-09 2021-08-24 联华电子股份有限公司 半导体元件及其制作方法
US10916498B2 (en) 2018-03-28 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure for logic circuit

Citations (7)

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Publication number Priority date Publication date Assignee Title
JPS6292477A (ja) * 1985-10-18 1987-04-27 Nec Corp 半導体記憶装置の製造方法
JPS6325931A (ja) * 1986-07-18 1988-02-03 Hitachi Ltd 半導体集積回路装置
JPH02292865A (ja) * 1989-05-02 1990-12-04 Hitachi Ltd 半導体集積回路装置
JPH04273168A (ja) * 1991-02-27 1992-09-29 Ricoh Co Ltd 不揮発性半導体メモリ装置
JPH09246540A (ja) * 1996-03-07 1997-09-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH10335458A (ja) * 1997-05-30 1998-12-18 Nec Corp 半導体装置及びその製造方法
JP2001244426A (ja) * 1999-12-22 2001-09-07 Texas Instr Inc <Ti> 強誘電メモリ・セルの製造方法

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KR100471164B1 (ko) * 2002-03-26 2005-03-09 삼성전자주식회사 금속-절연체-금속 캐패시터를 갖는 반도체장치 및 그제조방법
US6774432B1 (en) 2003-02-05 2004-08-10 Advanced Micro Devices, Inc. UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL
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JP3833189B2 (ja) * 2003-05-27 2006-10-11 株式会社リコー 半導体装置及びその製造方法
JP4545401B2 (ja) * 2003-07-22 2010-09-15 パナソニック株式会社 半導体装置の製造方法
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Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292477A (ja) * 1985-10-18 1987-04-27 Nec Corp 半導体記憶装置の製造方法
JPS6325931A (ja) * 1986-07-18 1988-02-03 Hitachi Ltd 半導体集積回路装置
JPH02292865A (ja) * 1989-05-02 1990-12-04 Hitachi Ltd 半導体集積回路装置
JPH04273168A (ja) * 1991-02-27 1992-09-29 Ricoh Co Ltd 不揮発性半導体メモリ装置
JPH09246540A (ja) * 1996-03-07 1997-09-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH10335458A (ja) * 1997-05-30 1998-12-18 Nec Corp 半導体装置及びその製造方法
JP2001244426A (ja) * 1999-12-22 2001-09-07 Texas Instr Inc <Ti> 強誘電メモリ・セルの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517307A (ja) * 2007-01-24 2010-05-20 インターナショナル・ビジネス・マシーンズ・コーポレーション 誘電体キャップ層
WO2014129252A1 (ja) 2013-02-21 2014-08-28 セイコーインスツル株式会社 紫外線消去型の不揮発性半導体装置
JP2014165191A (ja) * 2013-02-21 2014-09-08 Seiko Instruments Inc 紫外線消去型の不揮発性半導体装置
JP2022121116A (ja) * 2021-02-08 2022-08-19 ローム株式会社 半導体素子、当該半導体素子を備えた半導体装置、および、半導体素子の製造方法
JP7719608B2 (ja) 2021-02-08 2025-08-06 ローム株式会社 半導体素子、当該半導体素子を備えた半導体装置、および、半導体素子の製造方法

Also Published As

Publication number Publication date
JP2013145901A (ja) 2013-07-25
US20060278949A1 (en) 2006-12-14
TWI302377B (en) 2008-10-21
US20120032269A1 (en) 2012-02-09
TW200721451A (en) 2007-06-01
US7304387B2 (en) 2007-12-04
CN1877834A (zh) 2006-12-13
US20080057689A1 (en) 2008-03-06
US8058185B2 (en) 2011-11-15
CN1877834B (zh) 2010-09-29
KR20060127687A (ko) 2006-12-13
KR100703971B1 (ko) 2007-04-06
DE102006024654A1 (de) 2007-02-01

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