CN1983603A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1983603A CN1983603A CNA2007100007123A CN200710000712A CN1983603A CN 1983603 A CN1983603 A CN 1983603A CN A2007100007123 A CNA2007100007123 A CN A2007100007123A CN 200710000712 A CN200710000712 A CN 200710000712A CN 1983603 A CN1983603 A CN 1983603A
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- film
- barrier layer
- semiconductor device
- interlayer dielectric
- oxide film
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60N—SEATS SPECIALLY ADAPTED FOR VEHICLES; VEHICLE PASSENGER ACCOMMODATION NOT OTHERWISE PROVIDED FOR
- B60N3/00—Arrangements or adaptations of other passenger fittings, not otherwise provided for
- B60N3/02—Arrangements or adaptations of other passenger fittings, not otherwise provided for of hand grips or straps
- B60N3/023—Arrangements or adaptations of other passenger fittings, not otherwise provided for of hand grips or straps movable
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
- B60Y2200/00—Type of vehicle
- B60Y2200/10—Road Vehicles
- B60Y2200/14—Trucks; Load vehicles, Busses
- B60Y2200/143—Busses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
- B60Y2200/00—Type of vehicle
- B60Y2200/30—Railway vehicles
- B60Y2200/31—Locomotives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
- B60Y2304/00—Optimising design; Manufacturing; Testing
- B60Y2304/07—Facilitating assembling or mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Transportation (AREA)
- Mechanical Engineering (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003413199A JP4659355B2 (ja) | 2003-12-11 | 2003-12-11 | 半導体装置およびその製造方法 |
JP2003413199 | 2003-12-11 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410042472XA Division CN1329993C (zh) | 2003-12-11 | 2004-05-21 | 半导体器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1983603A true CN1983603A (zh) | 2007-06-20 |
CN100585860C CN100585860C (zh) | 2010-01-27 |
Family
ID=34650497
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410042472XA Expired - Fee Related CN1329993C (zh) | 2003-12-11 | 2004-05-21 | 半导体器件及其制造方法 |
CN200710000712A Expired - Fee Related CN100585860C (zh) | 2003-12-11 | 2004-05-21 | 半导体器件及其制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410042472XA Expired - Fee Related CN1329993C (zh) | 2003-12-11 | 2004-05-21 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7288799B2 (zh) |
JP (1) | JP4659355B2 (zh) |
KR (1) | KR100732132B1 (zh) |
CN (2) | CN1329993C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101847629B (zh) * | 2009-02-27 | 2012-01-11 | 台湾积体电路制造股份有限公司 | 接触焊盘下方的mim去耦电容器 |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20060037255A (ko) * | 2003-08-11 | 2006-05-03 | 허니웰 인터내셔널 인코포레이티드 | 타겟/벡킹 플레이트 구조물 |
JP4357289B2 (ja) * | 2003-12-26 | 2009-11-04 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法及び半導体装置 |
WO2005117120A1 (ja) | 2004-05-28 | 2005-12-08 | Fujitsu Limited | 半導体装置及びその製造方法 |
JP4776195B2 (ja) * | 2004-09-10 | 2011-09-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4968063B2 (ja) * | 2005-03-01 | 2012-07-04 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
CN101213667B (zh) * | 2005-07-04 | 2012-05-30 | 富士通半导体股份有限公司 | 半导体器件及其制造方法 |
CN101213655B (zh) * | 2005-07-05 | 2010-12-08 | 富士通半导体股份有限公司 | 半导体器件及其制造方法 |
CN100413066C (zh) * | 2005-11-30 | 2008-08-20 | 中芯国际集成电路制造(上海)有限公司 | 低k介电材料的接合焊盘和用于制造半导体器件的方法 |
JP4954898B2 (ja) * | 2005-12-08 | 2012-06-20 | 富士通セミコンダクター株式会社 | 半導体装置 |
KR101005028B1 (ko) | 2005-12-27 | 2010-12-30 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치 |
JP4998270B2 (ja) * | 2005-12-27 | 2012-08-15 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
WO2007083366A1 (ja) | 2006-01-18 | 2007-07-26 | Fujitsu Limited | 半導体装置、半導体ウエハ構造、及び半導体ウエハ構造の製造方法 |
JP5141550B2 (ja) * | 2006-03-08 | 2013-02-13 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5353237B2 (ja) * | 2006-03-31 | 2013-11-27 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP2008010758A (ja) | 2006-06-30 | 2008-01-17 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP5045028B2 (ja) * | 2006-08-16 | 2012-10-10 | 富士通セミコンダクター株式会社 | 表面形状センサとその製造方法 |
KR100812084B1 (ko) * | 2006-12-20 | 2008-03-07 | 동부일렉트로닉스 주식회사 | 반도체 소자의 가드링 및 그 형성방법 |
JP2008198885A (ja) * | 2007-02-15 | 2008-08-28 | Fujitsu Ltd | 半導体装置およびその製造方法 |
KR101030765B1 (ko) * | 2007-02-27 | 2011-04-27 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 기억 장치, 반도체 기억 장치의 제조 방법, 및 패키지 수지 형성 방법 |
WO2008114418A1 (ja) * | 2007-03-20 | 2008-09-25 | Fujitsu Microelectronics Limited | 半導体装置及びその製造方法 |
KR100995558B1 (ko) * | 2007-03-22 | 2010-11-22 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치 및 반도체 장치의 제조 방법 |
FR2916187B1 (fr) * | 2007-05-14 | 2009-07-17 | Marguerite Deperrois | Bouchon pour recipient formant reservoir d'additif |
JP2009071242A (ja) * | 2007-09-18 | 2009-04-02 | Seiko Epson Corp | 半導体装置及びその製造方法 |
KR20090072254A (ko) * | 2007-12-28 | 2009-07-02 | 주식회사 동부하이텍 | 씨모스 이미지 센서 및 그의 제조방법 |
JP2009231445A (ja) * | 2008-03-21 | 2009-10-08 | Toshiba Corp | 半導体記憶装置 |
JP5324822B2 (ja) | 2008-05-26 | 2013-10-23 | ラピスセミコンダクタ株式会社 | 半導体装置 |
KR20110089731A (ko) * | 2010-02-01 | 2011-08-09 | 삼성전자주식회사 | 배선 랜더를 포함하는 반도체 소자 및 그 제조 방법 |
JP6342033B2 (ja) * | 2010-06-30 | 2018-06-13 | キヤノン株式会社 | 固体撮像装置 |
JP2012178496A (ja) * | 2011-02-28 | 2012-09-13 | Sony Corp | 固体撮像装置、電子機器、半導体装置、固体撮像装置の製造方法 |
JP5423723B2 (ja) * | 2011-04-08 | 2014-02-19 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5849478B2 (ja) * | 2011-07-11 | 2016-01-27 | 富士通セミコンダクター株式会社 | 半導体装置および試験方法 |
US8741712B2 (en) * | 2012-09-18 | 2014-06-03 | Intermolecular, Inc. | Leakage reduction in DRAM MIM capacitors |
US9070698B2 (en) | 2012-11-01 | 2015-06-30 | International Business Machines Corporation | Through-substrate via shielding |
KR20140077502A (ko) * | 2012-12-14 | 2014-06-24 | 에스케이하이닉스 주식회사 | 저항성 메모리 장치를 위한 고전압 발생 회로 |
US9263511B2 (en) | 2013-02-11 | 2016-02-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package with metal-insulator-metal capacitor and method of manufacturing the same |
US9070683B2 (en) * | 2013-06-20 | 2015-06-30 | Freescale Semiconductor, Inc. | Die fracture detection and humidity protection with double guard ring arrangement |
JP6319028B2 (ja) * | 2014-10-03 | 2018-05-09 | 三菱電機株式会社 | 半導体装置 |
KR102276546B1 (ko) * | 2014-12-16 | 2021-07-13 | 삼성전자주식회사 | 수분 방지 구조물 및/또는 가드 링, 이를 포함하는 반도체 장치 및 그 제조 방법 |
JP6478395B2 (ja) * | 2015-03-06 | 2019-03-06 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
JP6706520B2 (ja) * | 2016-03-24 | 2020-06-10 | シナプティクス・ジャパン合同会社 | 半導体集積回路チップ及び半導体集積回路ウェーハ |
CN109414929B (zh) * | 2016-09-19 | 2020-04-14 | 惠普发展公司,有限责任合伙企业 | 具有带间隙的金属层的终止环 |
JP6832755B2 (ja) * | 2017-03-14 | 2021-02-24 | エイブリック株式会社 | 半導体装置および半導体装置の製造方法 |
US10861929B2 (en) * | 2018-06-27 | 2020-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electronic device including a capacitor |
US11881449B2 (en) * | 2019-07-19 | 2024-01-23 | Texas Instruments Incorporated | High performance high voltage isolators |
JP2021072341A (ja) * | 2019-10-30 | 2021-05-06 | キオクシア株式会社 | 半導体装置 |
CN111430324B (zh) * | 2020-04-09 | 2022-04-22 | 中国科学院微电子研究所 | 一种半导体结构及其形成方法、半导体器件、芯片 |
KR20220028539A (ko) * | 2020-08-28 | 2022-03-08 | 에스케이하이닉스 주식회사 | 반도체 장치 |
CN113380718A (zh) * | 2021-05-21 | 2021-09-10 | 苏州裕太微电子有限公司 | 一种芯片布线结构 |
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JP2000277465A (ja) | 1999-03-26 | 2000-10-06 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
KR100329781B1 (ko) * | 1999-06-28 | 2002-03-25 | 박종섭 | 수소확산을 방지할 수 있는 강유전체 메모리 소자 제조 방법 |
JP2001015696A (ja) | 1999-06-29 | 2001-01-19 | Nec Corp | 水素バリヤ層及び半導体装置 |
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JP2003218110A (ja) * | 2002-01-18 | 2003-07-31 | Seiko Epson Corp | 半導体装置 |
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-
2003
- 2003-12-11 JP JP2003413199A patent/JP4659355B2/ja not_active Expired - Fee Related
-
2004
- 2004-04-30 US US10/835,310 patent/US7288799B2/en not_active Expired - Lifetime
- 2004-05-21 CN CNB200410042472XA patent/CN1329993C/zh not_active Expired - Fee Related
- 2004-05-21 CN CN200710000712A patent/CN100585860C/zh not_active Expired - Fee Related
- 2004-05-25 KR KR1020040037207A patent/KR100732132B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101847629B (zh) * | 2009-02-27 | 2012-01-11 | 台湾积体电路制造股份有限公司 | 接触焊盘下方的mim去耦电容器 |
Also Published As
Publication number | Publication date |
---|---|
KR100732132B1 (ko) | 2007-06-27 |
US20050127395A1 (en) | 2005-06-16 |
JP4659355B2 (ja) | 2011-03-30 |
KR20050058182A (ko) | 2005-06-16 |
CN1627522A (zh) | 2005-06-15 |
US7288799B2 (en) | 2007-10-30 |
JP2005175204A (ja) | 2005-06-30 |
CN1329993C (zh) | 2007-08-01 |
CN100585860C (zh) | 2010-01-27 |
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