CN1529839A - 原子层沉积室的阀控制系统 - Google Patents
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Abstract
一种半导体处理室的阀控制系统,包括系统控制计算机和多个与处理室相联系的电可控阀。此系统还包括与系统控制计算机通信的可编程逻辑控制器,并且该可编程逻辑控制器在操作中被连接至电可控阀。阀控制的刷新时间可以小于10毫秒。因而,阀控制操作不会显著增加原子层沉积方法中高重复性循环所需的时间周期。通过可编程逻辑控制器的输出电源可以实施硬件联锁。
Description
本申请要求2001年3月7日提交的序列号为09/800,881的美国申请的优先权。
技术领域
本发明涉及半导体制造方法,更具体地说涉及控制沉积室的设备及方法。
背景技术
在诸如硅晶片或玻璃板之类的基片上制作用于计算机、监视器等的半导体器件。通过一系列制造步骤,例如薄膜沉积、氧化或氮化、蚀刻、抛光、和热及光刻处理,制作这些器件。
通常在低压处理室中执行薄膜沉积。在化学气相沉积中,晶片或其它基片被载入处理室中并在适当条件下暴露至处理气体,以在晶片上沉积薄膜形式的处理气体或处理气体的成分。
有许多不同种类的化学气相沉积方法,其中最近开发的一种方法称作原子层沉积(ALD)或原子层化学气相沉积(ALCVD)。在原子层沉积中,在晶片被交替地暴露至一种以上处理气体的重复过程中,多种薄膜层被沉积在晶片上。ALD方法的每个循环需要打开和关闭多个控制处理气体或清洗气体至处理室流量的阀门。因为每个循环被重复多次,产生、传送和执行阀打开及关闭命令所需的时间量,可能是完成ALD方法所需的整体耗费时间中的重要因素。本发明人已经意识到改进ALD方法的生产量的关键在于缩短阀控制命令的“刷新时间”,其中“刷新时间”指产生、传送和执行命令所需的时间。
发明内容
按照本发明,提供一种半导体处理室的阀控制系统。此阀控制系统包括系统控制计算机和多个与处理室相联系的电可控阀。此阀控制系统还包括与系统控制计算机通信的可编程逻辑控制器,在操作中被连接至电可控阀。此可编程逻辑控制器可以控制具有小于10毫秒的刷新时间、最好采用1毫秒(msec)数量级的刷新时间的电可控阀。
此阀控制系统还可以包括将可编程逻辑控制器连接至电可控阀的接口板和驱动器电路。此接口板可以包括固态继电器。
可编程逻辑控制器可以包括适合从可编程逻辑控制器提供输出信号的输出电源。阀控制系统还可以包括操作中连接至输出电源的联锁电路,并且其当联锁条件发生时适合禁止输出电源。
系统控制计算机可以在操作中连接至可编程逻辑控制器的输出电源,并且可以响应操作员输入信号而适合禁止输出电源。阀控制系统可以包括控制面板,该控制面板在操作中连接至系统控制计算机并适合接收操作员输入。
阀控制系统的多个电可控阀可以包括第一阀、第二阀和第三阀。第一阀可以连接至第一处理气体源,第二阀可以连接至第二处理气体源,而第三阀可以连接至清洗气体源。
按照本发明的另一方面,提供一种操作与半导体处理室联系的阀的方法。本方法包括产生阀的操作命令,传送所产生操作命令至阀,并在阀处执行所传送操作命令。产生、传送和执行步骤可以在不超过10毫秒的时间周期内全部执行。
按照本发明的另一方面,提供一种操作与半导体处理室联系的阀的方法。本方法包括提供电可控阀,并从系统控制计算机中下载处理方法(process recipe)命令至可编程逻辑控制器。本方法还包括根据所下载处理方法命令,在可编程逻辑控制器处反复地产生打开和关闭命令。本方法中还包括从可编程逻辑控制器传送打开和关闭命令至电可控阀,并响应所传送打开和关闭命令重复地打开和关闭电可控阀的步骤。
按照本发明此方面的方法还可以包括响应电可控阀的打开而使处理气体或清洗气体流动至半导体处理室。
利用按照本发明装配的阀控制系统,可以使用一毫秒数量级的刷新时间产生并执行处理气体或清洗气体的阀打开或关闭命令。具有如此快的刷新时间,可以一种有效的方法执行ALD所需的许多重复的气体流动循环,从而增加生产量。
本发明的方面也要求通过可编程逻辑控制器的输出电源的硬件联锁操作,以满足安全需求。并且,按照本发明的一方面,在互连PLC与阀的接口电路中采用固态继电器。固态继电器的使用允许系统按长使用寿命操作,尽管ALD处理需要相当大量的开-关循环。
从下面的优选实施方式的详细说明、所附权利要求书和附图中,本发明的进一步特征和优点将变得更全面而明显。
附图说明
图1为按照本发明的一种实施方式提供的阀控制系统的示意框图;
图2是作为图1系统的部件的接口板的示意图;而
图3是表示ALD工艺的阀控制操作的流程图。
具体实施方式
现在将参照图1说明按照本发明的一种实施方式提供的阀控制系统,图1为此阀控制系统的示意框图。在图1中标号10通常代表阀控制系统。阀控制系统10用于控制多个与处理室14相联系安装的电可控阀12。处理室14可以是传统的化学气相沉积室,修改以优化ALD方法的生产量。对处理室14的修改可以包括直接在处理室14的盖上安装阀12,和在处理室14中为与气体分配装置(未显示)非常接近的基片(未显示)提供处理位置。这些修改都是设计来最小化气体暴露循环时间。
如前面提到的那样,阀12为电可控阀,并且最好为可以从加利福尼亚圣克拉拉的Fujikin美国股份有限公司获得的NC型阀。每个阀12被连接至相应的气体源16。气体源16可以包括两种或更多的处理气体源和清洗气体源。
阀控制系统10包括系统控制计算机18和可编程逻辑控制器(PLC)20,PLC 20通过通信通路22与系统控制计算机18进行数据通信。对系统控制计算机18和PLC 20编程以按照主从布置操作,以使系统控制计算机18委派PLC 20阀12控制的。更具体地说,系统控制计算机18可以将定义阀操作方法的数据下载至PLC 20,并且PLC 20接着控制阀12执行所下载的阀控制方法。
系统控制计算机18可以是传统的可编程控制处理室14操作的个人电脑。除了委派给PLC 20的处理气体和清洗气体阀控功能外,系统控制计算机18可以控制处理室14的所有其它功能,包括例如加热器、升降机、泵、和诸如不同于通过PLC 20控制的阀12的排气阀之类的阀门的控制。适合于接收操作员输入的传统控制面板24被连接至系统控制计算机18。
PLC 20通过接口板26及驱动器28被连接至阀12。驱动器28可以通过由Fujikin销售的型号为23-6C-DR的电路构成。图2示意说明接口板26的外观。图2不需加以说明,但是需要指出的是接口板26的每个信号通路包括相应的固态继电器30。接口板26起到使驱动器28隔离PLC 20的输出的作用。
继续参照图1,PLC 20可以由例如Allen Bradley-Micrologix1500型之类的传统设备构成。PLC 20包括输出电源32,其为由PLC 20通过未显示的场效应晶体管(FETs)输出的信号提供电源。联锁电路34被连接至PLC 20的电源32。按照传统的实施方式,联锁电路34适合于接收传感器信号以指示需要立即停止处理操作的条件。这种条件可以称为“联锁条件”,例如气体室门(未显示)的打开。按照本发明,一旦联锁电路34接收到指示联锁条件的信号,联锁电路34禁止PLC 20的电源32,从而导致任何打开的阀12立即关闭。
系统控制计算机18也被连接至PLC 20的电源32,目的是禁止电源32并因而当接收到由操作员通过控制面板24发出的停机信号时关闭任何打开的阀12。
系统控制计算机18可以通过通信通路22下载命令至PLC 20,包括ALD方法过程中的阀操作方法。并且,PLC 20可以通过通信通路22发送数据消息至系统控制计算机18。这种数据消息可以包括确认消息和状态消息,举例说来,指示已经在工艺中根据一种方法执行了多次气体暴露循环,或者指示一种方法已经完成。
在操作中,系统控制计算机18控制处理室14的部件以执行诸如在处理室14中加载用于处理晶片、在处理室14中适当的位置定位晶片用以处理、和抽空处理室14之类的功能。当处理室14准备好执行原子层沉积工艺时,系统控制计算机18将指示依据阀12的控制的工艺方法的数据下载至PLC 20。根据所下载数据,PLC 20通过接口板26和驱动器28输出命令信号至阀12,以选择性打开和关闭阀12,并从而选择性将处理室14中的晶片暴露至来自气体源16的气体。
图3为通过PLC 20启动的与处理室14中执行的ALD方法相关的一系列功能的流程图。
在图3的程序的起始是步骤50,其中PLC 20增加计数器,此计数器可以在初始程序(未显示)中已经被复位。步骤50之后是步骤52,其中PLC 20产生并输出命令以打开第一阀12。假定第一阀12被连接至第一处理气体源,其可以是例如硅烷(SiH4)或乙硼烷(B2H2)。那么第一阀响应来自PLC 20的命令而打开,并且第一处理气体进入第一处理室14,并冲击晶片以在晶片上沉积第一薄膜。第一阀在预定的时间周期内保持打开状态,例如此时间周期可以是几十毫秒。然后,利用按照此方法的预定计时,PLC 20产生并传送命令以关闭第一阀(步骤54)。第一阀响应关闭命令而被关闭。同时,PLC 20发出命令以打开第二阀(步骤56),第二阀可以连接至氩气之类的清洗气体源。接着清洗气体流入处理室14。在预定的时间周期内清洗继续,此时间周期可以为大约几百毫秒,然后,利用预定的计时,PLC 20发出命令(步骤58)以关闭第二阀,从而终止清洗。
步骤58之后是步骤60。PLC 20在步骤60产生并传送命令以打开第三阀12。假定第三阀被连接至第二处理气体源,其可以是例如氟化钨(WF6)。当打开第三阀时,第二处理气体进入处理室14并冲击晶片以在晶片上沉积第二薄膜层。第三阀可以在预定的时间周期内保持在打开位置,此时间周期可以是几十毫秒。然后,以预定计时,PLC 20发出命令以关闭第三阀(步骤62),并同时发出命令打开第二阀(步骤64)以启动另一清洗。在预定的时间周期内清洗继续,此时间周期可以与步骤56的清洗相同,然后当PLC 20发出命令(步骤66)以关闭第二阀时清洗被终止。
总结步骤52-66中发生的情况,在一短暂阶段中利用第一处理气体在晶片上沉积薄膜,随后是清洗阶段,而随后是第二短暂阶段,其中利用第二处理气体在晶片上沉积薄膜,随后是第二清洗。可以认为这四阶段组成一循环,并需要四打开阀的命令和四关闭阀的命令。在一方面,布置控制系统10,并选择阀12,以使产生、传送和执行阀打开或关闭命令所需的刷新时间小于10毫秒。例如,产生并传送此命令可以花费小于1毫秒的时间,而通过阀执行此命令可以花费大约3毫秒。如果按照传统的实施方式,通过系统控制计算机18产生并传送每个阀打开和关闭的阀操作信号,将不会是这种情况。在这点上传统实施方式可能需要等于1秒或更多的时间产生并传送每个阀控制命令。本发明提供的较快刷新时间也通过选择如上所述类型的阀12和驱动器28并通过在接口板26中使用固态继电器得到支持。
步骤66之后是判定块68,其中确定是否ALD方法的方法已经完成。如果没有,(即,如果需要进一步的循环),图3的程序从判定块68返回至步骤50以使计数器被增加,从而再次执行步骤52-66的循环。ALD方法的典型方法可能需要10-20的较少循环或者200-300的较多循环或更多。一旦已经执行了此方法所需的循环数目,在步骤68就做出肯定的确定,并完成ALD方法(步骤70)。这可能包括,例如从处理室14去除晶片。
因为利用本发明的布置处理气体和清洗气体阀开口和关闭命令的刷新周期相当短,可以快速地执行ALD所需的大量阀操作循环,从而提高ALD方法的生产量。此外,可以布置本发明的控制系统以使通过PLC 20的输出电源提供硬件联锁;因而可以遵照硬件联锁所需的安全调节。此外,可以使用高速度且长寿命的固态继电器实施从PLC 20至阀12的信号通路,以获得较短的刷新时间,并且经管继电器需要非常大量的重复操作,控制系统耐用。
此外,所选择的本发明系统的阀可以非常快速地响应操作命令信号,从而最小化刷新时间。
本发明的阀控制装置还具有降低系统控制计算机处理负担的优点,因为ALD处理所需的大量重复命令被通过PLC 20而不是系统控制计算机18产生。
虽然根据图3说明的循环操作模式对ALD操作而言具有优势,以其可以被预期以非循环操作模式操作控制系统10,其中可以通过系统控制计算机18产生直接打开或关闭阀12的命令,并通过PLC20、接口板26和驱动器28逐一传送。
以上说明仅公开本发明的一种优选实施方式;对本领域的技术人员而言,很明显可以在本发明的领域内对上述设备做出修改。因此,虽然已经按照其一种优选实施方式公开本发明,应该理解其它实施方式可以包括在如权利要求书所限定的本发明的精神和领域内。
Claims (24)
1.一种用于半导体处理室的阀控制系统,包括:
系统控制计算机;
多个与处理室相联系的电可控阀;
与系统控制计算机通信的可编程逻辑控制器,并且该可编程逻辑控制器在操作中被连接至电可控阀。
2.如权利要求1的阀控制系统,其中可编程逻辑控制器按小于10毫秒的刷新时间控制电可控阀。
3.如权利要求1的阀控制系统,还包括将可编程逻辑控制器连接至电可控阀的接口板和驱动器电路。
4.如权利要求3的阀控制系统,其中接口板包括固态继电器。
5.如权利要求1的阀控制系统,其中可编程逻辑控制器包括适于从可编程逻辑控制器提供输出信号的输出电源;并且还包括操作中连接至输出电源的联锁电路,并且该联锁电路当联锁条件发生时适于禁止输出电源。
6.如权利要求5的阀控制系统,其中系统控制计算机在操作中被连接至输出电源,并且可以响应操作员输入信号而适于禁止输出电源。
7.如权利要求6的阀控制系统,还包括控制面板,在操作中该控制面板连接至系统控制计算机并适于接收操作员输入。
8.如权利要求1的阀控制系统,其中多个电可控阀包括第一阀、第二阀和第三阀,并且其中:
第一阀被连接至第一处理气体源;
第二阀被连接至第二处理气体源;
而第三阀被连接至清洗气体源。
9.一种操作与半导体处理室联系的阀的方法,本方法包括以下步骤:
产生阀的操作命令;
传送所产生操作命令至阀;并
对阀执行所传送操作命令;
其中产生、传送和执行步骤可以在不超过10毫秒的时间周期内被全部执行。
10.如权利要求9的方法,其中执行步骤包括打开阀。
11.如权利要求9的方法,其中执行步骤包括关闭阀。
12.如权利要求9的方法,还包括产生、传送和执行步骤被重复至少10次循环。
13.如权利要求12的方法,其中产生、传送和执行步骤被重复至少200次循环。
14.一种操作与半导体处理室联系的阀的方法,本方法包括以下步骤:
提供电可控阀;
从系统控制计算机中下载处理方法命令至可编程逻辑控制器;
根据所下载处理方法命令,在可编程逻辑控制器处反复地产生打开和关闭命令;
从可编程逻辑控制器传送打开和关闭命令至电可控阈;并响应所传送打开和关闭命令重复地打开和关闭电可控阀。
15.如权利要求14的方法,还包括响应电可控阀的打开而使处理气体流动至半导体处理室。
16.如权利要求14的方法,还包括响应电可控阀的打开而使清洗气体流动至半导体处理室。
17.一种设备,包括:
适合与系统控制计算机通信的可编程逻辑控制器,和至少一个与半导体处理室相联系的电可控阀,可编程逻辑控制器还适于:
产生至少一个阀的操作命令;和
传送所产生操作命令至至少一个阀从而在至少一个阀处执行所传送操作命令;
其中产生、传送和执行步骤可以在不超过10毫秒的时间周期内被全部执行。
18.一种设备,包括:
适合与系统控制计算机通信的可编程逻辑控制器,和至少一个与半导体处理室相联系的电可控阀,可编程逻辑控制器还适于:
从系统控制计算机下载处理方法命令;
根据所下载的处理方法命令重复地产生打开和关闭命令;和
传送打开和关闭命令至至少一个电可控阀从而重复打开和关闭至少一个电可控阀。
19.一种系统,包括:
至少一个与半导体处理室相联系的电可控阀;
适合与系统控制计算机及至少一个电可控阀通信的可编程逻辑控制器,并且还适于:
产生至少一个阀的操作命令;和
传送所产生操作命令至至少一个阀从而在至少一个阀处执行所传送操作命令;
其中产生、传送和执行步骤可以在不超过10毫秒的时间周期内被全部执行。
20.如权利要求19的系统,其中可编程逻辑控制器适于通过至少一个固态继电器与至少一个电可控阀通信。
21.一种系统,包括:
至少一个与半导体处理室相联系的电可控阀;
适合与系统控制计算机及至少一个电可控阀通信的可编程逻辑控制器,并且还适于:
从系统控制计算机下载处理方法命令;
根据所下载的处理方法命令重复地产生打开和关闭命令;和
传送打开和关闭命令至至少一个电可控阀以重复打开和关闭至少一个电可控阀。
22.如权利要求21的系统,其中可编程逻辑控制器适于通过至少一个固态继电器与至少一个电可控阀通信。
23.一种系统,包括:
多个与半导体处理室相联系的电可控阀;
多个连接至多个电可控阀的驱动器;
多个连接至多个驱动器的固态继电器;
适合与系统控制计算机及多个电可控阀通信的连接至多个固态继电器的可编程逻辑控制器,并且对每个电可控阀而言还适于:
产生阀的操作命令;和
传送所产生操作命令至阀从而在阀处执行所传送操作命令;
其中产生、传送和执行步骤可以在不超过10毫秒的时间周期内被全部执行。
24.一种系统,包括:
多个与半导体处理室相联系的电可控阀;
多个连接至多个电可控阀的驱动器;
多个连接至多个驱动器的固态继电器;
适合与系统控制计算机及多个电可控阀通信的连接至多个固态继电器的可编程逻辑控制器,此可编程逻辑控制器还适于:
从系统控制计算机下载处理方法命令;
根据所下载的处理方法命令重复地产生打开和关闭命令;和
传送打开和关闭命令至多个电可控阀的其中之一或更多个从而重复打开和关闭一个或更多个电可控阀。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103205734A (zh) * | 2012-01-16 | 2013-07-17 | 东京毅力科创株式会社 | 处理装置和阀门动作确认方法 |
CN103225074A (zh) * | 2012-01-25 | 2013-07-31 | 东京毅力科创株式会社 | 处理装置和处理状态的确认方法 |
CN111101115A (zh) * | 2018-10-25 | 2020-05-05 | 北京北方华创微电子装备有限公司 | 气路切换装置及其控制方法、半导体加工设备 |
CN115562107A (zh) * | 2022-09-27 | 2023-01-03 | 上海陛通半导体能源科技股份有限公司 | 基于Ether CAT极速控制技术的阀控系统 |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6671223B2 (en) * | 1996-12-20 | 2003-12-30 | Westerngeco, L.L.C. | Control devices for controlling the position of a marine seismic streamer |
JP3741253B2 (ja) * | 1999-12-24 | 2006-02-01 | 富士通株式会社 | 薬品製造装置 |
US6951804B2 (en) * | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US7037574B2 (en) | 2001-05-23 | 2006-05-02 | Veeco Instruments, Inc. | Atomic layer deposition for fabricating thin films |
JP2005504885A (ja) * | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US7780789B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Vortex chamber lids for atomic layer deposition |
US7204886B2 (en) * | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
WO2003065424A2 (en) * | 2002-01-25 | 2003-08-07 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US6972267B2 (en) * | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
DE60211470T2 (de) * | 2002-03-15 | 2006-11-09 | Vhf Technologies S.A. | Vorrichtung und Verfahren zur Herstellung von flexiblen Halbleiter-Einrichtungen |
US6861094B2 (en) * | 2002-04-25 | 2005-03-01 | Micron Technology, Inc. | Methods for forming thin layers of materials on micro-device workpieces |
KR100445298B1 (ko) * | 2002-05-03 | 2004-08-21 | 씨앤에스엔지니어링 주식회사 | 인터페이스 보드 |
US7354555B2 (en) * | 2002-05-08 | 2008-04-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas flow control system with interlock |
US6838114B2 (en) * | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
US7118783B2 (en) * | 2002-06-26 | 2006-10-10 | Micron Technology, Inc. | Methods and apparatus for vapor processing of micro-device workpieces |
US6821347B2 (en) * | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US20040069227A1 (en) * | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US6905737B2 (en) * | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
US20040177813A1 (en) | 2003-03-12 | 2004-09-16 | Applied Materials, Inc. | Substrate support lift mechanism |
US7342984B1 (en) | 2003-04-03 | 2008-03-11 | Zilog, Inc. | Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character |
US7422635B2 (en) * | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US7071118B2 (en) * | 2003-11-12 | 2006-07-04 | Veeco Instruments, Inc. | Method and apparatus for fabricating a conformal thin film on a substrate |
US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
KR20070048177A (ko) * | 2004-06-28 | 2007-05-08 | 캠브리지 나노테크 인크. | 증착 시스템 및 방법 |
GB0500223D0 (en) * | 2005-01-07 | 2005-02-16 | Imi Norgren Ltd | Communication system |
US20060216548A1 (en) * | 2005-03-22 | 2006-09-28 | Ming Mao | Nanolaminate thin films and method for forming the same using atomic layer deposition |
US20060272577A1 (en) * | 2005-06-03 | 2006-12-07 | Ming Mao | Method and apparatus for decreasing deposition time of a thin film |
KR100694666B1 (ko) * | 2005-08-24 | 2007-03-13 | 삼성전자주식회사 | 원자층 증착 챔버의 에어 밸브 장치 |
US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US7464917B2 (en) | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
US20070119370A1 (en) | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
KR100725102B1 (ko) * | 2006-01-24 | 2007-06-04 | 삼성전자주식회사 | 이온주입설비의 러핑밸브 오동작 감지장치 |
JP4933809B2 (ja) * | 2006-03-13 | 2012-05-16 | 株式会社日立国際電気 | 基板処理装置及び基板処理方法及び基板処理装置の判定プログラム |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US7601648B2 (en) | 2006-07-31 | 2009-10-13 | Applied Materials, Inc. | Method for fabricating an integrated gate dielectric layer for field effect transistors |
WO2008052047A2 (en) * | 2006-10-24 | 2008-05-02 | Applied Materials, Inc. | Vortex chamber lids for atomic layer deposition |
US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
US7692222B2 (en) * | 2006-11-07 | 2010-04-06 | Raytheon Company | Atomic layer deposition in the formation of gate structures for III-V semiconductor |
US20080206987A1 (en) | 2007-01-29 | 2008-08-28 | Gelatos Avgerinos V | Process for tungsten nitride deposition by a temperature controlled lid assembly |
US20100059059A1 (en) * | 2008-09-09 | 2010-03-11 | Perry Baromedical Corporation | Hyperbaric chamber |
GB0819183D0 (en) * | 2008-10-20 | 2008-11-26 | Univ Gent | Atomic layer deposition powder coating |
US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
US20100266765A1 (en) * | 2009-04-21 | 2010-10-21 | White Carl L | Method and apparatus for growing a thin film onto a substrate |
JP2011159279A (ja) * | 2010-01-07 | 2011-08-18 | Canon Anelva Corp | 真空処理装置及びplcでのパラメータ処理方法 |
US9284643B2 (en) * | 2010-03-23 | 2016-03-15 | Pneumaticoat Technologies Llc | Semi-continuous vapor deposition process for the manufacture of coated particles |
US9348339B2 (en) | 2010-09-29 | 2016-05-24 | Mks Instruments, Inc. | Method and apparatus for multiple-channel pulse gas delivery system |
US8997686B2 (en) | 2010-09-29 | 2015-04-07 | Mks Instruments, Inc. | System for and method of fast pulse gas delivery |
US10353408B2 (en) | 2011-02-25 | 2019-07-16 | Mks Instruments, Inc. | System for and method of fast pulse gas delivery |
US10126760B2 (en) | 2011-02-25 | 2018-11-13 | Mks Instruments, Inc. | System for and method of fast pulse gas delivery |
US10031531B2 (en) | 2011-02-25 | 2018-07-24 | Mks Instruments, Inc. | System for and method of multiple channel fast pulse gas delivery |
US8936831B2 (en) | 2012-02-03 | 2015-01-20 | Uchicago Argonne, Llc | Method for fluidizing and coating ultrafine particles, device for fluidizing and coating ultrafine particles |
US20130237063A1 (en) * | 2012-03-09 | 2013-09-12 | Seshasayee Varadarajan | Split pumping method, apparatus, and system |
CN105190135B (zh) * | 2013-03-15 | 2017-09-05 | 纽曼蒂克公司 | 具有串行通信电路线的阀歧管电路板 |
US10006557B2 (en) * | 2013-03-15 | 2018-06-26 | Asco, L.P. | Valve manifold circuit board with serial communication and control circuit line |
KR101456939B1 (ko) * | 2013-09-16 | 2014-11-03 | 대진대학교 산학협력단 | 코어-쉘 구조를 갖는 나노 입자의 인시튜 제조시스템 및 그 방법 |
JP6697706B2 (ja) * | 2015-12-07 | 2020-05-27 | 凸版印刷株式会社 | 原子層堆積装置 |
US10256075B2 (en) | 2016-01-22 | 2019-04-09 | Applied Materials, Inc. | Gas splitting by time average injection into different zones by fast gas valves |
JP7454915B2 (ja) | 2019-04-11 | 2024-03-25 | 東京エレクトロン株式会社 | 処理装置および処理方法 |
JP6789354B1 (ja) * | 2019-06-25 | 2020-11-25 | 株式会社アルバック | 表面処理方法 |
US11586573B2 (en) * | 2020-11-18 | 2023-02-21 | Applied Materials, Inc. | Distributed input/output (IO) control and interlock ring architecture |
Family Cites Families (207)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI117944B (fi) | 1999-10-15 | 2007-04-30 | Asm Int | Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi |
FI118158B (sv) | 1999-10-15 | 2007-07-31 | Asm Int | Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess |
SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
FI57975C (fi) | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
US4263091A (en) | 1980-01-25 | 1981-04-21 | Phillips Petroleum Company | Fluid flow control |
US4389973A (en) | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
FI64878C (fi) | 1982-05-10 | 1984-01-10 | Lohja Ab Oy | Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer |
JPS6065712A (ja) | 1983-09-20 | 1985-04-15 | Toshiba Corp | 酸化けい素被膜の形成方法 |
US4542044A (en) * | 1983-11-17 | 1985-09-17 | Owens-Corning Fiberglas Corporation | Method and apparatus to automatically apply a liquid dust inhibitor to fiberglass blowing wool |
US5259881A (en) | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
US4571319A (en) | 1984-04-05 | 1986-02-18 | General Motors Corporation | Method and apparatus for producing polymer articles having different properties in different regions of the articles |
GB2162207B (en) | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
JPH0766910B2 (ja) | 1984-07-26 | 1995-07-19 | 新技術事業団 | 半導体単結晶成長装置 |
US5693139A (en) | 1984-07-26 | 1997-12-02 | Research Development Corporation Of Japan | Growth of doped semiconductor monolayers |
US5294286A (en) | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
US5250148A (en) | 1985-05-15 | 1993-10-05 | Research Development Corporation | Process for growing GaAs monocrystal film |
JPS6291495A (ja) | 1985-10-15 | 1987-04-25 | Nec Corp | 半導体薄膜気相成長法 |
US4829022A (en) | 1985-12-09 | 1989-05-09 | Nippon Telegraph And Telephone Corporation | Method for forming thin films of compound semiconductors by flow rate modulation epitaxy |
US4835701A (en) | 1986-04-23 | 1989-05-30 | Kawasaki Steel Corp. | Post-mix method and system for supply of powderized materials |
US4917556A (en) | 1986-04-28 | 1990-04-17 | Varian Associates, Inc. | Modular wafer transport and processing system |
US4838983A (en) | 1986-07-03 | 1989-06-13 | Emcore, Inc. | Gas treatment apparatus and method |
US4767494A (en) | 1986-07-04 | 1988-08-30 | Nippon Telegraph & Telephone Corporation | Preparation process of compound semiconductor |
JPH0834180B2 (ja) | 1986-08-26 | 1996-03-29 | セイコー電子工業株式会社 | 化合物半導体薄膜の成長方法 |
US5246536A (en) | 1986-09-08 | 1993-09-21 | Research Development Corporation Of Japan | Method for growing single crystal thin films of element semiconductor |
JPH0639357B2 (ja) | 1986-09-08 | 1994-05-25 | 新技術開発事業団 | 元素半導体単結晶薄膜の成長方法 |
JP2587623B2 (ja) | 1986-11-22 | 1997-03-05 | 新技術事業団 | 化合物半導体のエピタキシヤル結晶成長方法 |
JP2929291B2 (ja) | 1986-12-04 | 1999-08-03 | セイコーインスツルメンツ株式会社 | 絶縁ゲート電界効果トランジスタの製造方法 |
US4951601A (en) | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US5882165A (en) | 1986-12-19 | 1999-03-16 | Applied Materials, Inc. | Multiple chamber integrated process system |
US5923985A (en) | 1987-01-05 | 1999-07-13 | Seiko Instruments Inc. | MOS field effect transistor and its manufacturing method |
DE3704505A1 (de) | 1987-02-13 | 1988-08-25 | Leybold Ag | Einlegegeraet fuer vakuumanlagen |
JPH0812844B2 (ja) | 1987-03-27 | 1996-02-07 | 日本電気株式会社 | ▲iii▼−v族化合物半導体およびその形成方法 |
JPH0727861B2 (ja) | 1987-03-27 | 1995-03-29 | 富士通株式会社 | ▲iii▼−▲v▼族化合物半導体結晶の成長方法 |
DE3721637A1 (de) | 1987-06-30 | 1989-01-12 | Aixtron Gmbh | Gaseinlass fuer eine mehrzahl verschiedener reaktionsgase in reaktionsgefaesse |
US5348911A (en) | 1987-06-30 | 1994-09-20 | Aixtron Gmbh | Material-saving process for fabricating mixed crystals |
US4840921A (en) | 1987-07-01 | 1989-06-20 | Nec Corporation | Process for the growth of III-V group compound semiconductor crystal on a Si substrate |
JPH0666274B2 (ja) | 1987-07-01 | 1994-08-24 | 日本電気株式会社 | ▲iii▼−v族化合物半導体の形成方法 |
FI81926C (fi) | 1987-09-29 | 1990-12-10 | Nokia Oy Ab | Foerfarande foer uppbyggning av gaas-filmer pao si- och gaas-substrater. |
DE3743938C2 (de) | 1987-12-23 | 1995-08-31 | Cs Halbleiter Solartech | Verfahren zum Atomschicht-Epitaxie-Aufwachsen einer III/V-Verbindungshalbleiter-Dünnschicht |
FR2626110A1 (fr) | 1988-01-19 | 1989-07-21 | Thomson Csf | Procede de realisation par epitaxie d'une couche d'un materiau supraconducteur |
US5166092A (en) | 1988-01-28 | 1992-11-24 | Fujitsu Limited | Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy |
US5130269A (en) | 1988-04-27 | 1992-07-14 | Fujitsu Limited | Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same |
DE3851701T2 (de) | 1988-06-03 | 1995-03-30 | Ibm | Verfahren zur Herstellung künstlicher Hochtemperatur-Supraleiter mit mehrschichtiger Struktur. |
US4927670A (en) | 1988-06-22 | 1990-05-22 | Georgia Tech Research Corporation | Chemical vapor deposition of mixed metal oxide coatings |
US5234561A (en) | 1988-08-25 | 1993-08-10 | Hauzer Industries Bv | Physical vapor deposition dual coating process |
US4931132A (en) | 1988-10-07 | 1990-06-05 | Bell Communications Research, Inc. | Optical control of deposition of crystal monolayers |
US5071320A (en) | 1988-11-03 | 1991-12-10 | Bahm, Inc. | Control system and method for chemical injectors |
US5013683A (en) | 1989-01-23 | 1991-05-07 | The Regents Of The University Of California | Method for growing tilted superlattices |
JPH0824191B2 (ja) | 1989-03-17 | 1996-03-06 | 富士通株式会社 | 薄膜トランジスタ |
US5186718A (en) | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
AU5977190A (en) | 1989-07-27 | 1991-01-31 | Nishizawa, Junichi | Impurity doping method with adsorbed diffusion source |
US5028565A (en) | 1989-08-25 | 1991-07-02 | Applied Materials, Inc. | Process for CVD deposition of tungsten layer on semiconductor wafer |
JP2926798B2 (ja) | 1989-11-20 | 1999-07-28 | 国際電気株式会社 | 連続処理エッチング方法及びその装置 |
EP0430274A3 (en) | 1989-12-01 | 1993-03-24 | Seiko Instruments Inc. | Method of producing bipolar transistor |
US5290748A (en) | 1990-01-16 | 1994-03-01 | Neste Oy | Polymerization catalyst for olefines |
FI84562C (fi) | 1990-01-16 | 1991-12-27 | Neste Oy | Foerfarande och anordning foer framstaellning av heterogena katalysatorer. |
FI87892C (fi) | 1991-07-16 | 1993-03-10 | Neste Oy | Foerfarande foer framstaellning av heterogena katalysatorer med oenskad metallhalt |
US5338389A (en) | 1990-01-19 | 1994-08-16 | Research Development Corporation Of Japan | Method of epitaxially growing compound crystal and doping method therein |
JPH07105497B2 (ja) | 1990-01-31 | 1995-11-13 | 新技術事業団 | 半導体デバイス及びその製造方法 |
JP2822536B2 (ja) | 1990-02-14 | 1998-11-11 | 住友電気工業株式会社 | 立方晶窒化ホウ素薄膜の形成方法 |
US5316615A (en) | 1990-03-23 | 1994-05-31 | International Business Machines Corporation | Surfactant-enhanced epitaxy |
JPH042699A (ja) | 1990-04-18 | 1992-01-07 | Mitsubishi Electric Corp | 結晶成長方法 |
US5173474A (en) | 1990-04-18 | 1992-12-22 | Xerox Corporation | Silicon substrate having an epitaxial superconducting layer thereon and method of making same |
US5091320A (en) | 1990-06-15 | 1992-02-25 | Bell Communications Research, Inc. | Ellipsometric control of material growth |
US5225366A (en) | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
DE4027628A1 (de) | 1990-08-31 | 1992-03-05 | Wolters Peter Fa | Vorrichtung zur steuerung oder regelung von laepp-, hon- oder poliermaschinen |
US5483919A (en) | 1990-08-31 | 1996-01-16 | Nippon Telegraph And Telephone Corporation | Atomic layer epitaxy method and apparatus |
US5085885A (en) | 1990-09-10 | 1992-02-04 | University Of Delaware | Plasma-induced, in-situ generation, transport and use or collection of reactive precursors |
US5286296A (en) | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
US5705224A (en) | 1991-03-20 | 1998-01-06 | Kokusai Electric Co., Ltd. | Vapor depositing method |
US5316793A (en) | 1992-07-27 | 1994-05-31 | Texas Instruments Incorporated | Directed effusive beam atomic layer epitaxy system and method |
US5270247A (en) | 1991-07-12 | 1993-12-14 | Fujitsu Limited | Atomic layer epitaxy of compound semiconductor |
US6001669A (en) | 1991-09-09 | 1999-12-14 | Philips Electronics North America Corporation | Method for producing II-VI compound semiconductor epitaxial layers having low defects |
US5311055A (en) | 1991-11-22 | 1994-05-10 | The United States Of America As Represented By The Secretary Of The Navy | Trenched bipolar transistor structures |
JP2987379B2 (ja) | 1991-11-30 | 1999-12-06 | 科学技術振興事業団 | 半導体結晶のエピタキシャル成長方法 |
US5336324A (en) | 1991-12-04 | 1994-08-09 | Emcore Corporation | Apparatus for depositing a coating on a substrate |
US5397428A (en) | 1991-12-20 | 1995-03-14 | The University Of North Carolina At Chapel Hill | Nucleation enhancement for chemical vapor deposition of diamond |
US5256244A (en) | 1992-02-10 | 1993-10-26 | General Electric Company | Production of diffuse reflective coatings by atomic layer epitaxy |
US5480818A (en) | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US5458084A (en) | 1992-04-16 | 1995-10-17 | Moxtek, Inc. | X-ray wave diffraction optics constructed by atomic layer epitaxy |
EP0641493B1 (en) | 1992-05-22 | 2000-06-28 | Minnesota Mining And Manufacturing Company | Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy |
US5278435A (en) | 1992-06-08 | 1994-01-11 | Apa Optics, Inc. | High responsivity ultraviolet gallium nitride detector |
FI91422C (fi) | 1992-06-18 | 1994-06-27 | Mikrokemia Oy | Menetelmä ja laitteisto nestemäisten reagenssien syöttämiseksi kemialliseen reaktoriin |
JPH0750690B2 (ja) | 1992-08-21 | 1995-05-31 | 日本電気株式会社 | ハロゲン化物を用いる半導体結晶のエピタキシャル成長方法とその装置 |
JP3405466B2 (ja) | 1992-09-17 | 2003-05-12 | 富士通株式会社 | 流体切替弁および半導体装置の製造装置 |
US5532511A (en) | 1992-10-23 | 1996-07-02 | Research Development Corp. Of Japan | Semiconductor device comprising a highspeed static induction transistor |
US5455072A (en) | 1992-11-18 | 1995-10-03 | Bension; Rouvain M. | Initiation and bonding of diamond and other thin films |
JPH06177349A (ja) | 1992-12-02 | 1994-06-24 | Matsushita Electric Ind Co Ltd | 高密度dramの製造方法および高密度dram |
US5607009A (en) | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
JP3265042B2 (ja) | 1993-03-18 | 2002-03-11 | 東京エレクトロン株式会社 | 成膜方法 |
JP3124861B2 (ja) | 1993-03-24 | 2001-01-15 | 富士通株式会社 | 薄膜成長方法および半導体装置の製造方法 |
US5443647A (en) | 1993-04-28 | 1995-08-22 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for depositing a refractory thin film by chemical vapor deposition |
US5330610A (en) | 1993-05-28 | 1994-07-19 | Martin Marietta Energy Systems, Inc. | Method of digital epilaxy by externally controlled closed-loop feedback |
JPH0729897A (ja) | 1993-06-25 | 1995-01-31 | Nec Corp | 半導体装置の製造方法 |
US6130147A (en) | 1994-04-07 | 2000-10-10 | Sdl, Inc. | Methods for forming group III-V arsenide-nitride semiconductor materials |
JP3181171B2 (ja) | 1994-05-20 | 2001-07-03 | シャープ株式会社 | 気相成長装置および気相成長方法 |
US5665640A (en) | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
JP3008782B2 (ja) | 1994-07-15 | 2000-02-14 | 信越半導体株式会社 | 気相成長方法およびその装置 |
US5796116A (en) | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
TW295677B (zh) | 1994-08-19 | 1997-01-11 | Tokyo Electron Co Ltd | |
US5641984A (en) | 1994-08-19 | 1997-06-24 | General Electric Company | Hermetically sealed radiation imager |
US5730801A (en) | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US5644128A (en) | 1994-08-25 | 1997-07-01 | Ionwerks | Fast timing position sensitive detector |
US6158446A (en) | 1994-11-14 | 2000-12-12 | Fsi International | Ultra-low particle semiconductor cleaner |
JPH08148431A (ja) | 1994-11-24 | 1996-06-07 | Mitsubishi Electric Corp | Mbe装置、及びガス分岐配管装置 |
FI97730C (fi) | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Laitteisto ohutkalvojen valmistamiseksi |
FI97731C (fi) | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Menetelmä ja laite ohutkalvojen valmistamiseksi |
FI100409B (fi) | 1994-11-28 | 1997-11-28 | Asm Int | Menetelmä ja laitteisto ohutkalvojen valmistamiseksi |
WO1996018756A1 (en) | 1994-12-16 | 1996-06-20 | Nkt Research Center A/S | A PA-CVD PROCESS FOR DEPOSITION OF A SOLID METAL-CONTAINING FILM ONTO A SUBSTRATE CONTAINING AT LEAST 50 % of Fe or WC |
JP3288200B2 (ja) | 1995-06-09 | 2002-06-04 | 東京エレクトロン株式会社 | 真空処理装置 |
JPH0922896A (ja) | 1995-07-07 | 1997-01-21 | Toshiba Corp | 金属膜の選択的形成方法 |
US6050283A (en) * | 1995-07-07 | 2000-04-18 | Air Liquide America Corporation | System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing |
KR100244041B1 (ko) | 1995-08-05 | 2000-02-01 | 엔도 마코토 | 기판처리장치 |
US5672054A (en) | 1995-12-07 | 1997-09-30 | Carrier Corporation | Rotary compressor with reduced lubrication sensitivity |
US6084302A (en) | 1995-12-26 | 2000-07-04 | Micron Technologies, Inc. | Barrier layer cladding around copper interconnect lines |
FI107533B (fi) | 1996-04-03 | 2001-08-31 | Fortum Oil & Gas Oy | Kemiallisten reaktioiden suorittamiseen tarkoitetut funktionaaliset pinnat ja menetelmä niiden valmistamiseksi |
US5667592A (en) | 1996-04-16 | 1997-09-16 | Gasonics International | Process chamber sleeve with ring seals for isolating individual process modules in a common cluster |
US5788799A (en) | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
US6062798A (en) | 1996-06-13 | 2000-05-16 | Brooks Automation, Inc. | Multi-level substrate processing apparatus |
US5747113A (en) | 1996-07-29 | 1998-05-05 | Tsai; Charles Su-Chang | Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation |
US5830270A (en) | 1996-08-05 | 1998-11-03 | Lockheed Martin Energy Systems, Inc. | CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class |
US5916365A (en) | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
JP2923753B2 (ja) | 1996-08-21 | 1999-07-26 | 工業技術院長 | Iii族原子層の形成方法 |
KR100216542B1 (ko) | 1996-08-27 | 1999-08-16 | 정선종 | 펄스 레이저 증착장치용 멀티 타겟 구동장치 |
FI100758B (fi) | 1996-09-11 | 1998-02-13 | Planar Internat Oy Ltd | Menetelmä ZnS:Mn-loisteainekerroksen kasvattamiseksi ohutkalvoelektrol uminenssikomponentteja varten |
US5835677A (en) | 1996-10-03 | 1998-11-10 | Emcore Corporation | Liquid vaporizer system and method |
US5923056A (en) | 1996-10-10 | 1999-07-13 | Lucent Technologies Inc. | Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials |
US5928389A (en) | 1996-10-21 | 1999-07-27 | Applied Materials, Inc. | Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool |
US5807792A (en) | 1996-12-18 | 1998-09-15 | Siemens Aktiengesellschaft | Uniform distribution of reactants in a device layer |
US6043177A (en) | 1997-01-21 | 2000-03-28 | University Technology Corporation | Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition |
US6051286A (en) | 1997-02-12 | 2000-04-18 | Applied Materials, Inc. | High temperature, high deposition rate process and apparatus for depositing titanium layers |
US5879459A (en) | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6174377B1 (en) | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US5855675A (en) | 1997-03-03 | 1999-01-05 | Genus, Inc. | Multipurpose processing chamber for chemical vapor deposition processes |
JPH10308283A (ja) | 1997-03-04 | 1998-11-17 | Denso Corp | El素子およびその製造方法 |
US5866795A (en) | 1997-03-17 | 1999-02-02 | Applied Materials, Inc. | Liquid flow rate estimation and verification by direct liquid measurement |
US6026762A (en) | 1997-04-23 | 2000-02-22 | Applied Materials, Inc. | Apparatus for improved remote microwave plasma source for use with substrate processing systems |
US5851849A (en) | 1997-05-22 | 1998-12-22 | Lucent Technologies Inc. | Process for passivating semiconductor laser structures with severe steps in surface topography |
US6140237A (en) | 1997-06-16 | 2000-10-31 | Chartered Semiconductor Manufacturing Ltd. | Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer |
US5882413A (en) | 1997-07-11 | 1999-03-16 | Brooks Automation, Inc. | Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer |
US5904565A (en) | 1997-07-17 | 1999-05-18 | Sharp Microelectronics Technology, Inc. | Low resistance contact between integrated circuit metal levels and method for same |
KR100385946B1 (ko) | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자 |
US6287965B1 (en) | 1997-07-28 | 2001-09-11 | Samsung Electronics Co, Ltd. | Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor |
KR100269306B1 (ko) | 1997-07-31 | 2000-10-16 | 윤종용 | 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법 |
US5904569A (en) | 1997-09-03 | 1999-05-18 | National Semiconductor Corporation | Method for forming self-aligned vias in multi-metal integrated circuits |
US5801634A (en) | 1997-09-08 | 1998-09-01 | Sony Corporation | Signal tower controller |
KR100274603B1 (ko) | 1997-10-01 | 2001-01-15 | 윤종용 | 반도체장치의제조방법및그의제조장치 |
US6110556A (en) | 1997-10-17 | 2000-08-29 | Applied Materials, Inc. | Lid assembly for a process chamber employing asymmetric flow geometries |
KR100252049B1 (ko) | 1997-11-18 | 2000-04-15 | 윤종용 | 원자층 증착법에 의한 알루미늄층의 제조방법 |
US5972430A (en) | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
US6099904A (en) | 1997-12-02 | 2000-08-08 | Applied Materials, Inc. | Low resistivity W using B2 H6 nucleation step |
FI104383B (fi) | 1997-12-09 | 2000-01-14 | Fortum Oil & Gas Oy | Menetelmä laitteistojen sisäpintojen päällystämiseksi |
TW439151B (en) | 1997-12-31 | 2001-06-07 | Samsung Electronics Co Ltd | Method for forming conductive layer using atomic layer deposition process |
KR100269328B1 (ko) | 1997-12-31 | 2000-10-16 | 윤종용 | 원자층 증착 공정을 이용하는 도전층 형성방법 |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6117244A (en) | 1998-03-24 | 2000-09-12 | Applied Materials, Inc. | Deposition resistant lining for CVD chamber |
US6316098B1 (en) | 1998-03-27 | 2001-11-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Molecular layer epitaxy method and compositions |
US6025627A (en) | 1998-05-29 | 2000-02-15 | Micron Technology, Inc. | Alternate method and structure for improved floating gate tunneling devices |
FI105313B (fi) | 1998-06-03 | 2000-07-14 | Planar Systems Oy | Menetelmä ohutkalvo-elektroluminesenssirakenteiden kasvattamiseksi |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
JP2000031387A (ja) | 1998-07-14 | 2000-01-28 | Fuji Electric Co Ltd | 誘電体薄膜コンデンサの製造方法 |
KR100275738B1 (ko) | 1998-08-07 | 2000-12-15 | 윤종용 | 원자층 증착법을 이용한 박막 제조방법 |
KR20000013654A (ko) | 1998-08-12 | 2000-03-06 | 윤종용 | 원자층 증착 방법으로 형성한 알루미나/알루미늄나이트라이드복합 유전체막을 갖는 캐패시터와 그제조 방법 |
KR100327105B1 (ko) | 1998-08-14 | 2002-03-09 | 오길록 | 고휘도 형광체 및 그 제조방법 |
US6291876B1 (en) | 1998-08-20 | 2001-09-18 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with composite atomic barrier film and process for making same |
FI105643B (fi) | 1998-08-21 | 2000-09-15 | Planar Systems Oy | Ohutkalvo-elektroluminesenssilaite ja menetelmä sen valmistamiseksi |
KR20000022003A (ko) | 1998-09-10 | 2000-04-25 | 이경수 | 금속과규소를포함한3성분질화물막의형성방법 |
FI108375B (fi) | 1998-09-11 | 2002-01-15 | Asm Microchemistry Oy | Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi |
KR100273474B1 (ko) | 1998-09-14 | 2000-12-15 | 이경수 | 화학기상 증착장치의 가스 공급장치와 그 제어방법 |
JP2995300B1 (ja) | 1999-02-03 | 1999-12-27 | 工業技術院長 | 機械要素部品の表面改善方法 |
US6200893B1 (en) | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
US6305314B1 (en) | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
KR100273473B1 (ko) | 1999-04-06 | 2000-11-15 | 이경수 | 박막 형성 방법 |
KR100347379B1 (ko) | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치 |
FI118342B (fi) | 1999-05-10 | 2007-10-15 | Asm Int | Laite ohutkalvojen valmistamiseksi |
JP2000340883A (ja) | 1999-05-27 | 2000-12-08 | Fujitsu Ltd | 多波長発振光半導体装置 |
US6124158A (en) | 1999-06-08 | 2000-09-26 | Lucent Technologies Inc. | Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants |
JP2000353666A (ja) | 1999-06-11 | 2000-12-19 | Matsushita Electric Ind Co Ltd | 半導体薄膜およびその製造方法 |
US6142162A (en) | 1999-06-18 | 2000-11-07 | Odoreyes Technology, Inc. | System and method for odorizing natural gas |
US6539891B1 (en) | 1999-06-19 | 2003-04-01 | Genitech, Inc. | Chemical deposition reactor and method of forming a thin film using the same |
US6071808A (en) | 1999-06-23 | 2000-06-06 | Lucent Technologies Inc. | Method of passivating copper interconnects in a semiconductor |
JP2003502878A (ja) | 1999-06-24 | 2003-01-21 | ナーハ ガジル、プラサード | 原子層化学気相成長装置 |
KR100319494B1 (ko) | 1999-07-15 | 2002-01-09 | 김용일 | 원자층 에피택시 공정을 위한 반도체 박막 증착장치 |
US6391785B1 (en) | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
TW515032B (en) | 1999-10-06 | 2002-12-21 | Samsung Electronics Co Ltd | Method of forming thin film using atomic layer deposition method |
FI117942B (fi) | 1999-10-14 | 2007-04-30 | Asm Int | Menetelmä oksidiohutkalvojen kasvattamiseksi |
AU1088401A (en) | 1999-10-15 | 2001-04-30 | Asm Microchemistry Oy | Deposition of transition metal carbides |
KR100795534B1 (ko) | 1999-10-15 | 2008-01-16 | 에이에스엠 인터내셔널 엔.브이. | 상감법 금속화를 위한 균일한 라이닝층 |
US6902763B1 (en) | 1999-10-15 | 2005-06-07 | Asm International N.V. | Method for depositing nanolaminate thin films on sensitive surfaces |
US6203613B1 (en) | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
TW468212B (en) | 1999-10-25 | 2001-12-11 | Motorola Inc | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
KR20010047128A (ko) | 1999-11-18 | 2001-06-15 | 이경수 | 액체원료 기화방법 및 그에 사용되는 장치 |
FI118804B (fi) | 1999-12-03 | 2008-03-31 | Asm Int | Menetelmä oksidikalvojen kasvattamiseksi |
JP4808889B2 (ja) * | 2000-01-05 | 2011-11-02 | 東京エレクトロン株式会社 | 透過分光を用いるウェハ帯域エッジの測定方法、及びウェハの温度均一性を制御するためのプロセス |
JP4817210B2 (ja) | 2000-01-06 | 2011-11-16 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
JP4362919B2 (ja) | 2000-02-04 | 2009-11-11 | 株式会社デンソー | 原子層エピタキシャル成長法による成膜方法 |
JP4776054B2 (ja) | 2000-02-04 | 2011-09-21 | 株式会社デンソー | 原子層成長による薄膜形成方法 |
US6492283B2 (en) | 2000-02-22 | 2002-12-10 | Asm Microchemistry Oy | Method of forming ultrathin oxide layer |
JP4211185B2 (ja) | 2000-02-29 | 2009-01-21 | 株式会社デンソー | Cvd,ale装置用ガラス基板収納治具 |
AU2001245388A1 (en) | 2000-03-07 | 2001-09-17 | Asm America, Inc. | Graded thin films |
JP4556282B2 (ja) | 2000-03-31 | 2010-10-06 | 株式会社デンソー | 有機el素子およびその製造方法 |
KR100363088B1 (ko) | 2000-04-20 | 2002-12-02 | 삼성전자 주식회사 | 원자층 증착방법을 이용한 장벽 금속막의 제조방법 |
JP2001328900A (ja) | 2000-05-15 | 2001-11-27 | Denso Corp | 薄膜の形成方法 |
US6676760B2 (en) * | 2001-08-16 | 2004-01-13 | Appiled Materials, Inc. | Process chamber having multiple gas distributors and method |
US7780785B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6998580B2 (en) * | 2002-03-28 | 2006-02-14 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
-
2001
- 2001-03-07 US US09/800,881 patent/US6734020B2/en not_active Expired - Lifetime
-
2002
- 2002-03-06 KR KR1020020011896A patent/KR20020071765A/ko not_active Application Discontinuation
- 2002-03-06 AU AU2002255664A patent/AU2002255664A1/en not_active Abandoned
- 2002-03-06 WO PCT/US2002/006778 patent/WO2002073329A2/en active Search and Examination
- 2002-03-06 CN CNA028086600A patent/CN1529839A/zh active Pending
- 2002-03-07 JP JP2002109810A patent/JP2002329674A/ja active Pending
- 2002-03-07 TW TW091104325A patent/TW569310B/zh not_active IP Right Cessation
-
2003
- 2003-12-09 US US10/731,651 patent/US7201803B2/en not_active Expired - Lifetime
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CN103205734A (zh) * | 2012-01-16 | 2013-07-17 | 东京毅力科创株式会社 | 处理装置和阀门动作确认方法 |
CN103205734B (zh) * | 2012-01-16 | 2015-06-10 | 东京毅力科创株式会社 | 处理装置和阀门动作确认方法 |
CN103225074A (zh) * | 2012-01-25 | 2013-07-31 | 东京毅力科创株式会社 | 处理装置和处理状态的确认方法 |
CN111101115A (zh) * | 2018-10-25 | 2020-05-05 | 北京北方华创微电子装备有限公司 | 气路切换装置及其控制方法、半导体加工设备 |
CN115562107A (zh) * | 2022-09-27 | 2023-01-03 | 上海陛通半导体能源科技股份有限公司 | 基于Ether CAT极速控制技术的阀控系统 |
Also Published As
Publication number | Publication date |
---|---|
TW569310B (en) | 2004-01-01 |
JP2002329674A (ja) | 2002-11-15 |
US7201803B2 (en) | 2007-04-10 |
WO2002073329A3 (en) | 2003-12-11 |
WO2002073329A2 (en) | 2002-09-19 |
US20020127745A1 (en) | 2002-09-12 |
AU2002255664A1 (en) | 2002-09-24 |
US20040143370A1 (en) | 2004-07-22 |
US6734020B2 (en) | 2004-05-11 |
KR20020071765A (ko) | 2002-09-13 |
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