CN1302087A - 非易失性半导体存储器件及其制造方法 - Google Patents

非易失性半导体存储器件及其制造方法 Download PDF

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Publication number
CN1302087A
CN1302087A CN00137393A CN00137393A CN1302087A CN 1302087 A CN1302087 A CN 1302087A CN 00137393 A CN00137393 A CN 00137393A CN 00137393 A CN00137393 A CN 00137393A CN 1302087 A CN1302087 A CN 1302087A
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film
gate
electrode material
material film
grid electrode
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CN00137393A
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Chinese (zh)
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井口直
姬野嘉朗
角田弘昭
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CN00137393A 1999-12-09 2000-12-08 非易失性半导体存储器件及其制造方法 Pending CN1302087A (zh)

Applications Claiming Priority (2)

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JP350841/1999 1999-12-09
JP35084199A JP2001168306A (ja) 1999-12-09 1999-12-09 不揮発性半導体記憶装置及びその製造方法

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CN00137393A Pending CN1302087A (zh) 1999-12-09 2000-12-08 非易失性半导体存储器件及其制造方法

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US (6) US6720610B2 (enExample)
JP (1) JP2001168306A (enExample)
KR (1) KR100395201B1 (enExample)
CN (2) CN100423273C (enExample)
TW (1) TW475251B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100466233C (zh) * 2005-12-20 2009-03-04 东部电子股份有限公司 自对准浮置栅极阵列的形成方法及包括该阵列的闪存器件
US7955995B2 (en) 2006-05-26 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film
CN110838491A (zh) * 2018-08-15 2020-02-25 无锡华润上华科技有限公司 半导体结构及其制造方法

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080079059A1 (en) * 1991-04-24 2008-04-03 Eon Silicon Solution Inc. Method of manufacturing a nonvolatile semiconductor memory device and select gate device having a stacked gate structure
JP2001168306A (ja) * 1999-12-09 2001-06-22 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2002246485A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US6563733B2 (en) * 2001-05-24 2003-05-13 Winbond Electronics Corporation Memory array architectures based on a triple-polysilicon source-side injection non-volatile memory cell
JP2002359308A (ja) 2001-06-01 2002-12-13 Toshiba Corp 半導体記憶装置及びその製造方法
US6762092B2 (en) 2001-08-08 2004-07-13 Sandisk Corporation Scalable self-aligned dual floating gate memory cell array and methods of forming the array
KR100462175B1 (ko) * 2002-02-08 2004-12-16 삼성전자주식회사 부유게이트를 갖는 비휘발성 메모리 소자의 셀 및 그제조방법
US6894930B2 (en) 2002-06-19 2005-05-17 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
WO2004001852A1 (en) * 2002-06-19 2003-12-31 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled nand
KR100454135B1 (ko) * 2002-10-10 2004-10-26 삼성전자주식회사 비휘발성 기억소자의 형성방법
KR100454136B1 (ko) * 2002-10-23 2004-10-26 삼성전자주식회사 플로팅 게이트의 전하 손실을 막을 수 있는 비휘발성메모리 장치 및 그 제조방법
US6815266B2 (en) * 2002-12-30 2004-11-09 Bae Systems Information And Electronic Systems Integration, Inc. Method for manufacturing sidewall contacts for a chalcogenide memory device
CN1745473B (zh) * 2003-01-30 2010-04-14 因芬尼昂技术股份公司 统一信道程序闪存位线制造方法
TWI220316B (en) * 2003-05-22 2004-08-11 Powerchip Semiconductor Corp Flash memory cell, flash memory cell array and manufacturing method thereof
JP3936315B2 (ja) * 2003-07-04 2007-06-27 株式会社東芝 半導体記憶装置及びその製造方法
JP4237561B2 (ja) 2003-07-04 2009-03-11 株式会社東芝 半導体記憶装置及びその製造方法
JP4005000B2 (ja) 2003-07-04 2007-11-07 株式会社東芝 半導体記憶装置及びデータ書き込み方法。
JP2005026589A (ja) 2003-07-04 2005-01-27 Toshiba Corp 半導体記憶装置及びその製造方法
JP2005079165A (ja) 2003-08-28 2005-03-24 Toshiba Corp 不揮発性半導体記憶装置とその製造方法、電子カードおよび電子装置
JP2005085996A (ja) 2003-09-09 2005-03-31 Toshiba Corp 半導体装置及びその製造方法
KR100541554B1 (ko) * 2003-12-09 2006-01-12 삼성전자주식회사 플래쉬 메모리 소자의 제조방법 및 그에 의해 제조된플래쉬 메모리 소자
KR100521444B1 (ko) * 2003-10-23 2005-10-12 동부아남반도체 주식회사 임베디드 비휘발성 메모리 및 그 제조방법
JP3966850B2 (ja) * 2003-11-20 2007-08-29 株式会社東芝 半導体装置およびその製造方法
JP4377676B2 (ja) * 2003-12-24 2009-12-02 株式会社東芝 半導体装置およびその製造方法
US7755095B2 (en) * 2003-12-24 2010-07-13 Panasonic Corporation Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
JP2005332885A (ja) 2004-05-18 2005-12-02 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US6972230B1 (en) * 2004-06-10 2005-12-06 Macronix International Co., Ltd. Method for fabricating a floating gate memory device
TWI246166B (en) * 2004-07-08 2005-12-21 Powerchip Semiconductor Corp Flash memory cell and fabricating method thereof
KR100590220B1 (ko) * 2004-08-04 2006-06-19 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
US7276414B2 (en) * 2004-08-18 2007-10-02 Micron Technology, Inc. NAND memory arrays and methods
US7306552B2 (en) * 2004-12-03 2007-12-11 Samsung Electronics Co., Ltd. Semiconductor device having load resistor and method of fabricating the same
US8384148B2 (en) * 2004-12-22 2013-02-26 Micron Technology, Inc. Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling
KR100647001B1 (ko) * 2005-03-09 2006-11-23 주식회사 하이닉스반도체 플래쉬 메모리 소자의 플로팅 게이트 전극 형성방법
KR100689203B1 (ko) * 2005-04-22 2007-03-08 경북대학교 산학협력단 플래시 메모리 소자
US7679129B1 (en) * 2005-05-13 2010-03-16 Spansion Llc System and method for improving oxide-nitride-oxide (ONO) coupling in a semiconductor device
KR100685621B1 (ko) * 2005-06-30 2007-02-22 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
KR100625142B1 (ko) 2005-07-05 2006-09-15 삼성전자주식회사 반도체 장치의 제조 방법
US20070023815A1 (en) * 2005-07-27 2007-02-01 Dong-Yean Oh Non-volatile memory device and associated method of manufacture
KR100717280B1 (ko) * 2005-08-22 2007-05-15 삼성전자주식회사 반도체 기억 장치의 셀 어레이 및 그 형성 방법
EP1786036A1 (en) * 2005-11-11 2007-05-16 STMicroelectronics S.r.l. Floating gate non-volatile memory cell and process for manufacturing
JP4476919B2 (ja) 2005-12-01 2010-06-09 株式会社東芝 不揮発性記憶装置
KR100650857B1 (ko) * 2005-12-23 2006-11-28 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
JP4921848B2 (ja) * 2006-05-09 2012-04-25 株式会社東芝 半導体装置およびその製造方法
JP2008016777A (ja) * 2006-07-10 2008-01-24 Toshiba Corp 半導体装置およびその製造方法
US7678648B2 (en) 2006-07-14 2010-03-16 Micron Technology, Inc. Subresolution silicon features and methods for forming the same
US7709307B2 (en) * 2006-08-24 2010-05-04 Kovio, Inc. Printed non-volatile memory
KR100852236B1 (ko) * 2006-09-05 2008-08-13 삼성전자주식회사 이이피롬 장치 및 그 제조 방법
KR100856165B1 (ko) * 2006-09-29 2008-09-03 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법
KR100757335B1 (ko) * 2006-10-18 2007-09-11 삼성전자주식회사 불휘발성 메모리 장치 및 이를 제조하는 방법
KR100773354B1 (ko) * 2006-10-31 2007-11-05 삼성전자주식회사 플래쉬 메모리 소자 및 그 제조방법
US8642441B1 (en) * 2006-12-15 2014-02-04 Spansion Llc Self-aligned STI with single poly for manufacturing a flash memory device
KR100847388B1 (ko) * 2007-02-22 2008-07-18 주식회사 하이닉스반도체 반도체 메모리 소자 및 그의 제조 방법
US7745285B2 (en) 2007-03-30 2010-06-29 Sandisk Corporation Methods of forming and operating NAND memory with side-tunneling
JP2008270351A (ja) 2007-04-17 2008-11-06 Toshiba Corp 不揮発性半導体記憶装置
DE102007041206B4 (de) * 2007-08-31 2015-12-17 Advanced Micro Devices, Inc. Halbleiterbauelement und Verfahren zum selbstjustierten Entfernen eines high-k Gatedielektrikums über einem STI-Gebiet
JP4843586B2 (ja) * 2007-10-01 2011-12-21 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
WO2009045964A1 (en) * 2007-10-01 2009-04-09 Applied Materials, Inc. Low temperature conformal oxide formation and applications
KR101416318B1 (ko) * 2008-01-15 2014-07-09 삼성전자주식회사 소자 분리 공정을 포함하는 반도체 장치의 제조방법
US8138077B2 (en) 2008-05-13 2012-03-20 Hynix Semiconductor Inc. Flash memory device and method of fabricating the same
JP2010004020A (ja) * 2008-05-19 2010-01-07 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP2010123890A (ja) 2008-11-21 2010-06-03 Toshiba Corp 不揮発性半導体メモリ
US20110127632A1 (en) * 2009-12-01 2011-06-02 Macronix International Co., Ltd. Semiconductor memory devices and methods of manufacturing the same
TWI481014B (zh) * 2009-12-11 2015-04-11 Macronix Int Co Ltd 半導體記憶元件及其製造方法
US8551858B2 (en) * 2010-02-03 2013-10-08 Spansion Llc Self-aligned SI rich nitride charge trap layer isolation for charge trap flash memory
US8686492B2 (en) * 2010-03-11 2014-04-01 Spansion Llc Non-volatile FINFET memory device and manufacturing method thereof
KR101736246B1 (ko) 2010-09-14 2017-05-17 삼성전자주식회사 비휘발성 메모리 소자 및 이의 제조방법
JP2012199313A (ja) * 2011-03-18 2012-10-18 Toshiba Corp 不揮発性半導体記憶装置
JP2011135107A (ja) * 2011-04-04 2011-07-07 Toshiba Corp 半導体装置
US8692353B2 (en) * 2011-09-02 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
US8877614B2 (en) 2011-10-13 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer for semiconductor structure contact
ES2934670T3 (es) 2013-01-24 2023-02-23 Cardiovalve Ltd Válvulas protésicas ancladas de forma ventricular
US9786752B2 (en) * 2013-03-19 2017-10-10 Rohm Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20160181435A1 (en) * 2014-12-22 2016-06-23 Wafertech, Llc Floating gate transistors and method for forming the same
US10703328B2 (en) * 2017-12-01 2020-07-07 Ford Global Technologies, Llc Seatbelt guide assembly
CN113517296B (zh) * 2020-04-10 2025-02-07 合肥晶合集成电路股份有限公司 一种非易失性存储器结构及其制备方法
TWI896920B (zh) * 2022-12-09 2025-09-11 華邦電子股份有限公司 半導體結構及其形成方法
TWI852393B (zh) * 2023-03-10 2024-08-11 華邦電子股份有限公司 半導體裝置及其形成方法
WO2025155328A1 (en) * 2024-01-17 2025-07-24 Silicon Storage Technology, Inc. Non-volatile memory cell with ono compound insulation layer between floating and control gates and a method of fabrication

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
JPS5636143A (en) * 1979-08-31 1981-04-09 Hitachi Ltd Manufacture of semiconductor device
US4892840A (en) * 1986-03-27 1990-01-09 Texas Instruments Incorporated EPROM with increased floating gate/control gate coupling
US5156990A (en) * 1986-07-23 1992-10-20 Texas Instruments Incorporated Floating-gate memory cell with tailored doping profile
US5017980A (en) * 1988-07-15 1991-05-21 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell
US5420060A (en) * 1988-11-14 1995-05-30 Texas Instruments Incorporated Method of making contract-free floating-gate memory array with silicided buried bitlines and with single-step defined floating gates
JPH088313B2 (ja) * 1989-07-25 1996-01-29 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JPH0399473A (ja) 1989-09-12 1991-04-24 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5051795A (en) * 1989-11-21 1991-09-24 Texas Instruments Incorporated EEPROM with trench-isolated bitlines
JP2870086B2 (ja) 1990-01-25 1999-03-10 日本電気株式会社 Ｍｏｓ型不揮発性半導体記憶装置の製造方法
US5091327A (en) * 1990-06-28 1992-02-25 National Semiconductor Corporation Fabrication of a high density stacked gate eprom split cell with bit line reach-through and interruption immunity
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
EP1032034A1 (en) * 1992-01-22 2000-08-30 Macronix International Co., Ltd. Method of making memory device
JPH05218440A (ja) 1992-01-30 1993-08-27 Nec Corp 不揮発性半導体記憶装置の製造方法
US5510638A (en) * 1992-11-02 1996-04-23 Nvx Corporation Field shield isolated EPROM
JP3222234B2 (ja) 1992-12-18 2001-10-22 株式会社リコー 半導体装置の製造方法
JP3323607B2 (ja) 1993-11-12 2002-09-09 株式会社日立製作所 半導体記憶装置の製造方法
US5475251A (en) * 1994-05-31 1995-12-12 National Semiconductor Corporation Secure non-volatile memory cell
JP3445660B2 (ja) * 1994-07-08 2003-09-08 新日本製鐵株式会社 不揮発性半導体記憶装置及びその製造方法
JP3397903B2 (ja) * 1994-08-23 2003-04-21 新日本製鐵株式会社 不揮発性半導体記憶装置の製造方法
JP3469362B2 (ja) * 1994-08-31 2003-11-25 株式会社東芝 半導体記憶装置
US6291851B1 (en) * 1995-07-21 2001-09-18 Rohm Co., Ltd. Semiconductor device having oxide layers formed with different thicknesses
JP3598197B2 (ja) * 1997-03-19 2004-12-08 株式会社ルネサステクノロジ 半導体装置
US6190966B1 (en) * 1997-03-25 2001-02-20 Vantis Corporation Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration
JPH11163304A (ja) * 1997-11-28 1999-06-18 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US6342715B1 (en) * 1997-06-27 2002-01-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP3602691B2 (ja) 1997-06-27 2004-12-15 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JPH1154633A (ja) * 1997-07-29 1999-02-26 Mitsubishi Electric Corp 不揮発性半導体記憶装置
TW322608B (en) * 1997-07-31 1997-12-11 United Microelectronics Corp Manufacturing method of self-aligned salicide
KR19990018367A (ko) * 1997-08-27 1999-03-15 윤종용 불휘발성 메모리 장치 및 그 제조방법
JPH1187543A (ja) * 1997-09-10 1999-03-30 Toshiba Corp 不揮発性半導体記憶装置
US5851881A (en) * 1997-10-06 1998-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making monos flash memory for multi-level logic
JP3149937B2 (ja) * 1997-12-08 2001-03-26 日本電気株式会社 半導体装置およびその製造方法
JP3867378B2 (ja) 1997-12-09 2007-01-10 ソニー株式会社 半導体不揮発性記憶装置の製造方法
US6034394A (en) * 1997-12-18 2000-03-07 Advanced Micro Devices, Inc. Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices
US5972749A (en) * 1998-01-05 1999-10-26 Advanced Micro Devices, Inc. Method for preventing P1 punchthrough
US6373095B1 (en) * 1998-02-25 2002-04-16 International Business Machines Corporation NVRAM cell having increased coupling ratio between a control gate and floating gate without an increase in cell area
JPH11317464A (ja) 1998-03-02 1999-11-16 Sony Corp 電気的書き換えが可能なメモリ素子及びその製造方法
US6215145B1 (en) * 1998-04-06 2001-04-10 Micron Technology, Inc. Dense SOI flash memory array structure
US6635530B2 (en) * 1998-04-07 2003-10-21 Micron Technology, Inc. Methods of forming gated semiconductor assemblies
KR100280107B1 (ko) * 1998-05-07 2001-03-02 윤종용 트렌치 격리 형성 방법
US6034395A (en) * 1998-06-05 2000-03-07 Advanced Micro Devices, Inc. Semiconductor device having a reduced height floating gate
JP2000012709A (ja) 1998-06-18 2000-01-14 Toshiba Corp 不揮発性半導体メモリ及びその製造方法
KR100314708B1 (ko) * 1998-07-03 2002-04-24 윤종용 이피롬셀이내장된반도체소자의제조방법
EP0975022A1 (en) * 1998-07-22 2000-01-26 STMicroelectronics S.r.l. Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors, with salicided junctions
JP4237344B2 (ja) * 1998-09-29 2009-03-11 株式会社東芝 半導体装置及びその製造方法
EP0996162A1 (en) * 1998-10-21 2000-04-26 STMicroelectronics S.r.l. Low resistance contact structure for a select transistor of EEPROM memory cells
KR100318683B1 (ko) * 1998-12-17 2001-12-28 윤종용 산화막/질화막/산화막 유전층의 형성방법
US6190986B1 (en) 1999-01-04 2001-02-20 International Business Machines Corporation Method of producing sulithographic fuses using a phase shift mask
TW409415B (en) * 1999-01-18 2000-10-21 United Microelectronics Corp Flash memory structure and the manufacture method thereof
TW405265B (en) * 1999-01-30 2000-09-11 United Microelectronics Corp Flash memory structure and its manufacture method
US6228713B1 (en) * 1999-06-28 2001-05-08 Chartered Semiconductor Manufacturing Ltd. Self-aligned floating gate for memory application using shallow trench isolation
US6096604A (en) * 1999-08-04 2000-08-01 Chartered Semiconductor Manufacturing Ltd Production of reversed flash memory device
US6369416B1 (en) * 1999-09-23 2002-04-09 Advanced Micro Devices, Inc. Semiconductor device with contacts having a sloped profile
JP2001168306A (ja) * 1999-12-09 2001-06-22 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US6255689B1 (en) * 1999-12-20 2001-07-03 United Microelectronics Corp. Flash memory structure and method of manufacture
JP2001230390A (ja) * 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体不揮発性記憶装置およびその製造法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100466233C (zh) * 2005-12-20 2009-03-04 东部电子股份有限公司 自对准浮置栅极阵列的形成方法及包括该阵列的闪存器件
US7955995B2 (en) 2006-05-26 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film
CN101454892B (zh) * 2006-05-26 2011-12-14 株式会社半导体能源研究所 半导体器件及其制造方法
US9231070B2 (en) 2006-05-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film
CN110838491A (zh) * 2018-08-15 2020-02-25 无锡华润上华科技有限公司 半导体结构及其制造方法
CN110838491B (zh) * 2018-08-15 2022-05-10 无锡华润上华科技有限公司 半导体结构及其制造方法

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US7582928B2 (en) 2009-09-01
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US20040108538A1 (en) 2004-06-10

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