CN105051525A - 具有薄导电元件的化学设备 - Google Patents
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Abstract
在一个实施方式中,描述了化学设备。传感器包括化学灵敏的场效应晶体管,其包括具有多个彼此电耦联的浮栅导体的浮栅结构。导电元件叠加并且与多个浮栅导体中的最上浮栅导体通信。导电元件比最上浮栅导体更宽和更薄。电介质材料限定延伸至导电元件的上表面的开孔。
Description
相关申请的交叉引用
本申请要求2013年8月22日提交的美国临时申请号61/868,942和2013年3月15日提交的61/790,866的优先权,其全部内容通过引用以它们的整体并入本文。
技术领域
本公开,一般而言,涉及用于化学分析的传感器,和涉及制造这样的传感器的方法。
背景技术
各种类型的化学设备已经用于化学过程的检测。一种类型是化学灵敏的场效应晶体管(chemFET)。chemFET包括由通道区域分开的源极和漏极,和偶联至通道区域的化学灵敏区域。ChemFET的运转是基于通道电导的调制,其是由于附近发生的化学反应在灵敏区域的电荷的改变造成的。通道电导的调制改变chemFET的阈值电压,其可被测量,以检测和/或测定化学反应的特征。可,例如,通过通过施加适当的偏压电压至源极和漏极,和测量流过chemFET的所得电流来测量阈值电压。作为另一实施例,可通过驱动已知电流通过chemFET,和测量在源极或漏极的所得电压。
离子灵敏的场效应晶体管(ISFET)是在灵敏区域包括离子灵敏的层的一类chemFET。分析物溶液中离子的存在改变离子灵敏的层和分析物溶液之间界面处的表面电位,其是由于分析物溶液中存在的离子造成的表面电荷基团的质子化或去质子化。ISFET的灵敏区域处表面电位的改变影响可测量的设备的阈值电压,以指示溶液中离子的存在和/或浓度。ISFET阵列可用于监测化学反应,比如DNA测序反应,其基于反应期间离子存在的检测,产生,或使用。见,例如,Rothberg等的美国专利号7,948,015,其通过引用以其整体并入本文。更一般而言,大的chemFET阵列或其他类型的化学设备可用于检测和测量各种过程中各种分析物(例如氢离子、其他离子、化合物等)的静态和/或动态量或浓度。过程可以是例如生物或化学反应、细胞或组织培养或监测天然活性、核酸测序等。
操作大尺寸化学设备阵列出现的问题是传感器输出信号容易遭受噪声的影响。具体而言,噪声影响用于测定通过传感器检测的化学和/或生物过程的特征的下游信号处理的精确性。所以期望提供设备,包括低噪声化学设备,和制造这样的设备的方法。
发明内容
在一个示例性实施方式中,公开了化学设备。传感器包括化学灵敏的场效应晶体管,其包括包含彼此电耦联的多个浮栅导体的浮栅结构。导电元件与多个浮栅导体中的最上浮栅导体叠加并且通信。导电元件可比最上浮栅导体更宽和更薄。传感器进一步包括电介质材料,其限定延伸至导电元件的上表面的开孔。根据示例性实施方式,导电元件可包括下述至少一种:钛、钽、亚硝酸钛,和铝,和/或其氧化物和/或混合物。根据另一实施方式,化学设备中相邻导电元件之间的距离是约0.18微米。在仍另一实施方式中,导电元件的厚度是约0.1-0.2微米。在一个实施方式中,多个浮栅导体中的最上浮栅导体可具有的厚度大于多个浮栅导体中其他浮栅导体的厚度。在另一实施方式中,导电元件可包括的材料与构成最上浮栅导体的材料不同。根据示例性实施方式,导电元件可包括的材料与构成最上浮栅导体的材料不同。根据另一实施方式,电介质材料的内表面和导电元件的上表面限定化学设备的反应区域的外表面。在仍另一实施方式中,多个浮栅导体在进一步包括阵列线和总线的层中。在一个实施方式中,化学设备包括传感器区域,其包含化学灵敏的场效应晶体管,和包含外周电路的外周区域,以从化学灵敏的场效应晶体管获得信号。在一个实施方式中,导电元件在仅仅在传感器区域中的导电层中。在另一实施方式中,导电元件包括不在外周区域中的材料。根据示例性实施方式,化学灵敏的场效应晶体管可包括浮栅结构,其包括彼此电耦联并且由电介质层分开的多个导体,并且浮栅导体可在多个导体中的最上导体上。根据另一实施方式,电介质材料的第一层可以是氮化硅和第二层可以是二氧化硅和正硅酸四乙酯的至少一种,和第二层限定开孔的侧壁。在一个实施方式中,化学设备可进一步包括微流体结构,其与化学灵敏的场效应晶体管流体流动通信,并且布置为递送分析物用于测序。
在另一示例性实施方式中,公开了用于制造化学设备的方法。方法包括形成化学灵敏的场效应晶体管,其包括包含彼此电耦联的多个浮栅导体的浮栅结构。方法进一步包括形成导电元件,其与多个浮栅导体中的最上浮栅导体叠加和通信。导电元件比最上浮栅导体更宽和更薄。方法进一步包括形成电介质材料,其限定延伸至导电元件的上表面的开孔。根据示例性实施方式,导电元件的上表面限定所述化学传感器的反应区域的底部表面。根据另一实施方式,电介质材料的内表面和导电元件的上表面限定化学传感器的反应区域的外边界。在仍另一实施方式中,在仅仅在化学设备的传感器区域中的导电层中形成导电元件。
在本说明书中描述的主题的一个或多个实施方式的具体方面阐释在附图和下面说明书中。主题的其他特征、方面和优势将从说明书、附图和权利要求中变得显而易见。
附图说明
图1根据示例性实施方式图解用于核酸测序的系统组件的方块图。
图2根据示例性实施方式图解一部分集成电路设备和流动池的横截面图。
图3根据示例性实施方式图解代表性化学设备和相应的反应区域的横截面图。
图4至14根据示例性实施方式阐释用于形成化学设备阵列和相应的开孔结构的制造工艺的阶段。
图15根据示例性实施方式图解包括示例性传感器区域和示例性外周区域的示例性化学设备的方块图。
发明详述
描述的化学设备包括低噪声化学设备,比如化学灵敏的场效应晶体管(chemFETs),用于检测叠加的可操作相关化学反应中的化学反应。化学设备的传感器可包括多个浮栅导体,传感层沉积在多个浮栅导体的最上漂浮导体上。但是,申请人已经发现在多个浮栅导体的最上漂浮导体上方添加用于传感的另外层的优势是克服了技术挑战和另外层的成本。例如,申请人已经发现了本文所述的化学设备的优势包括提供增强光刻工艺余量;(例如,防止开孔的位移和/或烧坏);和在电介质中比提供比可能更大的开孔是传感区域直接在最上浮栅导体的顶部(例如,更大的孔可适应更多的信号)。
本文所述的示例性化学设备具有传感表面区域,其可包括用于传感的专用层。在本文所述的实施方式中,导电元件与最上浮栅导体叠加并且通信。因为最上浮栅导体可用于提供阵列线(例如字线,位线等)和总线用于访问化学设备/为化学设备供电,最上浮栅导体应是适当的材料或材料的混合物并且为其具有足够的厚度。因为导电元件在化学设备的衬底上不同层中,导电元件可用作专用传感表面区域,不依赖于最上浮栅结构的材料和厚度。例如,导电元件可比最上浮栅导体更宽,使得传感表面区域可相对大。例如,导电元件可比最上浮栅导体更薄,使得传感表面区域可提供用于传感的增加的灵敏性。结果,可以以高密度阵列提供低噪声化学设备,使得可精确检测反应的特征。
另外,最上浮栅导体不需要推送至处理极限;同时相邻的浮栅导体应具有适于携带高电流的厚度(即用于第电阻率),相邻浮栅导体之间的空间不需要是工艺设计规则允许的最小空间。用于最上浮栅导体的材料(一种或多种)应适于高电流。提供与最上浮栅导体叠加并且通信的导电元件,为选择用于导电元件的材料提供了更大的自由度,因为导电元件在与最上浮栅导体不同的层上。
图1根据示例性实施方式图解用于核酸测序的系统组件的方块图。组件包括在集成电路设备100上的流动池101、参考电极108、用于测序的多个试剂114、阀组116、洗液110、阀112、流体控制器118、线路120/122/126、通路104/109/111、废物容器106、阵列控制器124,和用户界面128。集成电路设备100包括微孔阵列107叠加传感器阵列,其包括如本文所描述的化学设备。流动池101包括入口102、出口103和流动腔105,其限定微孔阵列107上试剂的流动路径。参考电极108可以是任何适当类型或形状,包括具有流体通路或插入通路111内腔的导线的同心圆柱体。试剂114可通过泵、气压或其他适当的方法驱动通过流体通路、阀和流动池101,和在离开流动池101的出口103之后可丢入废物容器106。流体控制器118可用适当的软件控制用于试剂114的驱动力和阀112和阀组116的操作。微孔阵列107包括如本文所描述的反应区域的阵列,也本文称为微孔,其操作上与传感器阵列中的化学设备相关联。例如,每个反应区域可耦联适于检测该反应区域中感兴趣的分析物或反应性质的化学设备。微孔阵列107可整合在集成电路设备100中,从而微孔阵列107和传感器阵列是单个设备或芯片的一部分。流动池101可具有各种构造,用于控制微孔阵列107上试剂114的通路和流速。阵列控制器124为集成电路设备100提供偏压电压和定时和控制信号,用于读取传感器阵列的化学设备。阵列控制器124也为参考电极108提供参考偏压电压,以使流经微孔阵列107的试剂114偏置。
在实验期间,阵列控制器124通过集成电路设备100上的输出端口经总线127收集和处理来自传感器阵列的化学设备的输出信号。阵列控制器124可以是计算机或其他计算方式。阵列控制器124可包括储存数据和软件应用的储存器,用于访问数据和执行应用的处理器,和利于和图1中的系统的各种组件通信的组件。化学设备的输出信号的值指示在微孔阵列107中的相应反应区域中进行的一个或多个反应的物理和/或化学参数。例如,在示例性实施方式中,输出信号的值可使用下述公开的技术处理:Rearick等2011年12月29日提交的美国专利申请号13/339,846,其基于2010年12月30日提交的美国临时专利申请号61/428,743,和2011年1月3日提交的61/429,328,和Hubbell2011年12月29日提交的美国专利申请号13/339,753,其基于2010年12月29日提交的美国临时专利申请号61/428,097,其每一篇通过引用以它们的整体并入本文。用户界面128可显示与流动池101和从集成电路设备100上传感器阵列中的化学设备接收的输出信号相关的信息。用户界面128也可显示工具设置和控制,并且允许使用者进入或设置工具设置和控制。
在示例性实施方式中,在实验期间,流体控制器118可控制递送单个试剂114以预定的流速,以预定的顺序至流动池101和集成电路设备100预定的持续时间。阵列控制器124可收集和分析化学设备的输出信号,其指示响应试剂114的递送发生的化学反应。在实验期间,系统也可监测和控制集成电路设备100的温度,从而发生反应并且在预定的温度下进行测量。系统可配置为使得单个流体或试剂在操作期间全部多步骤反应中接触参考电极108。可关闭阀112,以防止任何洗液110当试剂114流动时,流入通路109。尽管可停止洗液的流动,在参考电极108、通路109和微孔阵列107之间可仍具有不间断的流体和电通信。可选择参考电极108和通路109和111之间结合点之间的距离,从而几乎没有通路109中流动并且可能扩散至通路111的试剂量达到参考电极108。在示例性实施方式中,可选择洗液110连续接触参考电极108,其可尤其用于使用频繁冲洗步骤的多步骤反应。
图2图解了一部分集成电路设备100和流动池101的横截面图。在操作期间,流动池101的流动腔105限制横跨微孔阵列107中反应区域开孔端递送的试剂的试剂流208。可选择反应区域的体积、形状、纵横比(比如基础宽度与孔深度比例),和其他尺寸特征基于发生的反应的性质,以及采用的试剂、副产物,或标记技术(如果有的话)。传感器阵列205的化学设备响应(和产生输出信号)微孔阵列107中相关的反应区域的化学反应,以检测感兴趣的分析物或反应性质。传感器阵列205的化学设备可,例如,是化学灵敏的场效应晶体管(chemFETs),比如离子灵敏的场效应晶体管(ISFETs)。可用于实施方式的化学设备和阵列构造的例子描述在美国专利申请公开号2010/0300559、2010/0197507、2010/0301398、2010/0300895、2010/01307a43和2009/0026082,和美国专利号7,575,865中,其每一篇通过引用以它们的整体并入本文。
图3根据示例性实施方式图解了两个代表性化学设备和它们相应的反应区域的横截面图。图3中,显示了两个化学设备350、351,代表可包括成千上万化学设备的传感器阵列的一小部分。化学设备350耦联至相应的反应区域301,和化学设备351耦联至相应的反应区域302。化学设备350是传感器阵列中化学设备的代表。在阐释的实施例中,化学设备350是化学灵敏的场效应晶体管(chemFET),更具体地在该实施例中是离子灵敏场效应晶体管(ISFET)。化学设备350包括浮栅结构318,其具有通过导电元件307耦联至反应区域301的传感器板320。如图3中所阐释,传感器板320是浮栅结构318中的最上浮栅导体。在阐释的实施例中,浮栅结构318包括电介质材料层319中导电材料的多个图案化层。化学设备350也包括半导体衬底354中的源极区域321和漏极区域322。源极区域321和漏极区域322包括掺杂的半导体材料,其具有的导电类型与衬底354的导电类型不同。例如,源极区域321和漏极区域322可包括掺杂的P型半导体材料,和衬底可包括掺杂的n型半导体材料。通道区域323将源极区域321和漏极区域322分开。浮栅结构318叠加在通道区域323上,并且通过栅极电介质352与衬底354分开。栅极电介质352可以是二氧化硅,例如。可选地,其他电介质可用于栅极电介质352。
如图3中所显示,电介质材料限定反应区域301,其可在由缺少电介质材料限定的开孔中。电介质材料303可包括一个或多个材料层,比如二氧化硅或氮化硅或任何其他适当的材料或材料的混合物。开孔的尺寸,和它们的间距,可在实施方式之间不同。在一些实施方式中,开孔可具有定义为4倍平面视图横截面面积(A)除以π的平方根(例如,sqrt(4*A/π)不大于5微米,比如不大于3.5微米,不大于2.0微米,不大于1.6微米,不大于1.0微米,不大于0.8微米,不大于0.6微米,不大于0.4微米,不大于0.2微米或不大于0.1微米的特征直径。
化学设备350包括导电元件307,与多个浮栅导体中的最上浮栅导体叠加和通信。导电元件比最上浮栅导体更宽和更薄,如图3中所阐释。在阐释的实施方式中,电介质材料限定延伸至导电元件的上表面的开孔。导电元件307的上表面307a限定化学设备的反应区域的底部表面。从另一角度看,导电元件307的上表面307a和电介质材料1316的内表面1316a的下部下部限定化学设备的反应区域的底部区域。导电元件307可具有的宽度W比反应区域的宽度W更宽。根据一个实施方式,化学设备中相邻导电元件之间的距离333是约0.18微米。根据另一实施方式,导电元件的厚度334是约0.1-0.2微米。在一个实施方式中,多个浮栅导体中的最上浮栅导体可具有的厚度335大于多个浮栅导体中其他浮栅导体的厚度335′。在另一实施方式中,导电元件370可包括的材料与构成最上浮栅导体的材料不同。
导电元件307的上表面307a用作化学设备350的传感表面。如遍及本公开讨论的导电元件可形成各种形状(宽度、高度等),这取决于制造工艺中使用的材料/蚀刻技术/加工工艺等。导电元件307可包括一个或多个各种不同的材料,以利于对具体的离子灵敏(例如氢离子)。根据示例性实施方式,导电元件可包括下述至少一种:钛、钽、亚硝酸钛,和铝,和/或其氧化物和/或混合物。导电元件307使得化学设备350具有足够大的表面积,以避免与小的传感表面相关的噪声问题。化学设备的平面视图面积部分由反应区域301的宽度(或直径)决定,并且可造小,允许高密度阵列。另外,因为反应区域301由导电元件307的上表面307a和电介质材料1316的内表面1316a限定,传感表面区域取决于反应区域301的深度和周长,并且可相对大。结果,可以以高密度阵列提供低噪声化学设备350、351,使得可精确检测反应的特征。
在设备的制造和/或操作期间,导电元件307的材料的薄氧化物可生长在上表面307a上,其用作化学设备350的传感材料(例如离子灵敏的传感材料)。例如,在一个实施方式中,导电元件可以是氮化钛,并且氧化钛或氮氧化钛可在制造和/或暴露于溶液期间使用期间生长在上表面307a上。是否形成氧化物取决于导电材料、进行的制造方法和操作设备的条件。在阐释的实施例中,导电元件307显示为单层材料。更一般而言,导电元件可包括一层或多层各种导电材料,比如金属或陶瓷,或任何其他适当的导电材料或材料的混合物,这取决于实施方式。导电材料可以是,例如,金属材料或其合金,或可以是陶瓷材料,或其组合。示例性金属材料包括下述一种:铝、铜、镍、钛、银、金、铂、铪、镧、钽、钨、铱、锆、钯或其组合。示例性陶瓷材料包括下述一种:氮化钛、氮化钛铝、氮氧化钛、氮化钽,或其组合。在一些可选的实施方式中,另外的共形传感材料(未显示)沉积在导电元件307的上表面307a上。传感材料可包括一个或多个各种不同的材料,以利于对具体的离子灵敏。例如,氮化硅或氮氧化硅,以及金属氧化物比如二氧化硅,氧化铝或氧化钽,一般提供对氢离子的灵敏性,而包括包含缬氨霉素的聚氯乙烯的传感材料提供对钾离子的灵敏性。也可使用对其他离子比如钠、银、铁、溴、碘、钙和硝酸根灵敏的材料,这取决于实施方式。
再次参考图3,操作时,反应物、洗液和其他试剂可通过扩散机构340移动进入和离开反应区域301。化学设备350响应导电元件307附近电荷324的量(并且产生与其相关的输出信号)。分析物溶液中电荷324的存在改变在分析物溶液和导电元件307的上表面307a之间界面处的表面电位,其是由于分析物溶液中存在的离子造成的表面电荷基团的质子化或去质子化。电荷324的改变使得改变浮栅结构318上的电压,其接着改变化学设备350的晶体管的阈值电压。可通过测量源极区域321和漏极区域322之间通道区域323中的电流测量阈值电压的该改变。结果,化学设备350可用于在与源极区域321或漏极区域322连接的阵列线上直接提供基于电流的输出信号,或用另外的电路间接提供基于电压的输出信号。
如下面参考图4-14更详细描述,导电元件307与最上浮栅导体320叠加和通信。导电元件比最上浮栅导体更宽和更薄。因为电荷324可更高度集中在反应区域301的底部附近,在一些实施方式中导电元件尺寸的变化可对响应电荷324检测的信号的振幅具有显著的影响。在一个实施方式中,在反应区域301中进行的反应可以是分析反应,以鉴定或测定感兴趣的分析物的特征或特性。这样的反应可直接或间接产生影响导电元件307附近电荷量的副产物。如果这样的副产物以少量产生或快速降解或与其他成分反应,可在反应区域301中同时分析多拷贝的相同分析物以便增加产生的输出信号。在一个实施方式中,多拷贝的分析物可连接至固相载体312,在沉积至反应区域301之前或之后。固相载体312可以是微粒、纳米颗粒、珠子、固体或多孔包括凝胶等等。为了简化和容易阐释,固相载体312在本文也称为粒子。固相载体可为改变的尺寸,如本领域普通技术人员所理解。此外,固体载体可位于开孔中各个地方的位置。对于核酸分析物,可通过滚环扩增(RCA)、指数RCA、聚合酶链式反应(PCR)等技术制备多个连接的拷贝,以产生扩增子,而不需要固体载体。
在各种示例性实施方式中,本文所述的方法、系统和计算机可读的介质可有利地用于处理和/或分析从基于电子或电荷的核酸测序获得的数据和信号。在基于电子或电荷的测序(比如,基于pH的测序)中,可通过检测作为聚合酶-催化核苷酸延伸反应的天然副产物产生的离子(例如,氢离子)测定核苷酸并入事件。这可用于对样品或模板核酸测序,所述样品或模板核酸可以是感兴趣的核酸序列的片段,例如,并且其可直接或间接作为克隆群体附接至固体载体,比如粒子、微粒、珠子等。样品或模板核酸可以可操作地结合引物和聚合酶并且可进行重复轮或″流″的脱氧核苷三磷酸(″dNTP″)添加(其在本文可称为″核苷酸流″,由其可产生核苷酸并入)和冲洗。引物可使样品或模板退火从而引物的3′端可当添加与模板中的下一碱基互补的dNTP时通过聚合酶延伸。然后,基于核苷酸流的已知序列和指示每个核苷酸流期间,离子浓度的测量的化学传感器的输出信号,可测定类型的同一性,与耦联化学传感器的反应区域中存在的样品核酸相关的核苷酸(一种或多种)的序列和数量。
图4-14根据示例性实施方式阐释了形成化学设备阵列和相应的孔结构的制造工艺的阶段。图4图解了化学设备350、351的结构400,其包括浮栅结构(例如浮栅结构318)。可通过将栅极电介质材料的层沉积在半导体衬底354上,和将多晶硅(或其他导电材料)的层沉积在栅极电介质材料的层上形成结构400。多晶硅的层和栅极电介质材料的层可然后使用蚀刻掩模蚀刻,以形成栅极电介质元件(例如栅极电介质352)和浮栅结构的最下导电材料元件。在形成离子植入掩模之后,可然后进行离子植入以形成源极和漏极区域(例如源极区域321和漏极区域322)of化学设备。电介质材料319的第一层可沉积在最下导电材料元件的上方。可然后在电介质材料319的第一层中蚀刻的通孔中形成导电插头,以接触浮栅结构的最下导电材料元件。导电材料的层可然后沉积在电介质材料319的第一层上并且图案化,以形成与导电插头电连接的第二导电材料元件。可然后多次重复该过程,以形成图4中显示的完整的浮栅结构318。可选地,可进行其他和/或另外的技术,以形成该结构。形成图4中的结构400可也包括形成另外的元件比如阵列线路(例如字线,位线等),用于访问化学设备,衬底354中另外的掺杂区域,和用于操作化学设备的其他电路(例如接入电路、偏置电路等),这取决于其中实施本文所述的化学设备的设备和阵列构造。在一些实施方式中,结构的元件可,例如,使用下面描述的技术制造:美国专利申请公开号2010/0300559、2010/0197507、2010/0301398、2010/0300895、2010/013071a43和2009/0026082,和美国专利号7,575,865,其每一篇通过参考以它们的整体并入。
如图5中阐释的结构500中阐释,可在化学设备350的场效应晶体管的传感器板320上形成电介质材料503。接下来,如图6中所阐释,蚀刻图5中结构500的电介质材料503,以形成开孔618、620(用于通孔),其延伸至化学设备350、351的浮栅结构的上表面,产生图6中阐释的结构600。可,例如,通过使用光刻工艺使电介质材料503上光刻胶的层图案化形成开孔618、620,以限定开孔618、620的位置,并且然后使用图案化的光刻胶作为蚀刻掩模非均匀地蚀刻电介质材料503。电介质材料503的非均匀蚀刻可,例如,是干燥蚀刻工艺,比如基于氟的活性离子蚀刻(RIE)工艺。在阐释的实施方式中,开孔618、620由距离630隔开并且开孔618、620具有用于通孔的适当的尺寸。例如,分开距离630可以是用于形成开孔618、620的工艺(例如光刻工艺)的最小特征尺寸。在这样的情况下,距离630可明显大于宽度620。接下来,导电材料的层704沉积在图6中阐释的结构600上,产生图7中阐释的结构700。导电材料704可称为导电线。导电材料704可包括一层或多层导电材料。例如,导电材料704可以是氮化钛层,或钛层。可选地,可使用其他和/或另外的导电材料,比如那些上述参考导电元件。另外,可沉积大于一个导电材料的层。导电材料704可沉积使用各种技术,比如喷射、活性喷射、原子层沉积(ALD)、低压化学气相沉积(LPCVD)、等离子体增强的化学气相沉积(PECVD)、金属有机化学气相沉积(MOCVD)等。
接下来,导电材料的层805比如钨,例如,沉积在图7中阐释的结构700上,产生图8中阐释的结构800。导电材料805可使用各种技术,比如喷射、活性喷射、原子层沉积(ALD)、低压化学气相沉积(LPCVD)、等离子体增强的化学气相沉积(PECVD)、金属有机化学气相沉积(MOCVD)等或任何其他适当的技术沉积。接下来,导电材料704和导电材料805使用化学机械平面化(CMP)工艺平面化,例如,产生图9中阐释的结构900。作为任选的,另外步骤,可在平面化的导电材料704和导电材料805上形成通孔屏障线1006,产生图10中阐释的结构1000。例如,通孔屏障线1006可以是氮化钛。尽管通孔屏障线1006阐释在图11-14中,但是通孔屏障线1006是任选的。
接下来,可在通孔屏障线1006上形成导电材料1107,产生图11中阐释的结构1100。任选地,可直接在平面化的导电材料704和导电材料805上形成导电材料1107。例如,导电材料1107可以是钽。接下来,蚀刻导电材料1107,以形成延伸至通孔屏障线1006的开孔1208、1210、1212,产生图12中阐释的结构1200。可,例如,通过使用光刻工艺使导电材料1107上的光刻胶层图案化形成开孔1208、1210、1212,以限定开孔1208、1210、1212的位置,并且然后使用图案化的光刻胶作为蚀刻掩模非均匀地蚀刻电介质材料503。导电材料1107的非均匀蚀刻可,例如,是干燥蚀刻工艺,比如基于氟的活性离子蚀刻(RIE)工艺。在阐释的实施方式中,开孔1208、1210、1212由距离1230L分开。导电元件1107的高度为1230H。导电元件1107的长度1230L大于传感器板320的长度320L。导电元件1107的厚度1230H小于传感器板320的厚度320H。导电材料1107中导电材料元件之间的空间(即1220)小于传感器板之间的空间(即1220′)。导电元件不需要直接在最上浮栅导体上方和/或与最上浮栅导体对齐。
接下来,可在图12中阐释的结构1200上形成电介质材料1316,产生图13中阐释的结构1300。例如,电介质材料1316可以是正硅酸四乙酯(TEOS)或二氧化硅。接下来,蚀刻图13中结构1300的电介质材料1316,以形成开孔1418、1420,其延伸至化学设备350、351的浮栅结构的上表面,产生图14中阐释的结构1400。
图15根据实施方式图解了包括示例性传感器区域和示例性外周区域的示例性化学设备的方块图。化学设备1500可包括包含化学灵敏的场效应晶体管的传感器区域1501和包含外周电路的外周区域1503,以从化学灵敏的场效应晶体管获得信号。在一个实施方式中,导电元件在仅仅在传感器区域中的导电层中1501。在另一实施方式中,导电元件包括不在外周区域1503中的材料。图15中阐释的传感器区域和外周区域并不意味着限制与例如化学设备上的形状或尺寸或位置。
尽管通过参考上面详述的优选实施方式和实施例公开了本发明,但是应当理解这些实施例期望为示意性的而不是限制性的。考虑本领域技术人员容易想到修饰和组合,该修饰和组合在本发明的精神和所附权利要求的范围内。
Claims (18)
1.化学设备,其包括:
化学灵敏的场效应晶体管,其包括包含彼此电耦联的多个浮栅导体的浮栅结构;
导电元件,其与所述多个浮栅导体中的最上浮栅导体叠加和通信,所述导电元件比所述最上浮栅导体更宽和更薄;和
电介质材料,其限定延伸至所述导电元件的上表面的开孔。
2.权利要求1所述的化学设备,其中所述导电元件包括下述至少一种:钛、钽、亚硝酸钛,和铝,和/或其氧化物和/或混合物。
3.权利要求1所述的化学设备,其中所述化学设备中相邻导电元件之间的距离是约0.18微米。
4.权利要求1所述的化学设备,其中所述导电元件的厚度是约0.1-0.2微米。
5.权利要求1所述的化学设备,其中所述多个浮栅导体中的最上浮栅导体的厚度大于所述多个浮栅导体中其他浮栅导体的厚度。
6.权利要求1所述的化学设备,其中所述导电元件包括与构成所述最上浮栅导体的材料不同的材料。
7.权利要求1所述的化学设备,其中所述电介质材料的内表面和所述导电元件的上表面限定所述化学设备的反应区域的外表面。
8.权利要求1所述的化学设备,其中所述多个浮栅导体在包括阵列线和总线的层中。
9.权利要求1所述的化学设备,其包括传感器区域,其包含化学灵敏的场效应晶体管,和外周区域,其包含外周电路,以从所述化学灵敏的场效应晶体管获得信号。
10.权利要求9所述的化学设备,其中所述导电元件在仅仅在所述传感器区域中的导电层中。
11.权利要求9所述的化学设备,其中所述导电元件包括不在所述外周区域中的材料。
12.权利要求1所述的化学设备,其中所述化学灵敏的场效应晶体管包括浮栅结构,其包括彼此电耦联并且由电介质层分开的多个导体,并且所述浮栅导体是所述多个导体中的最上导体。
13.权利要求1所述的化学设备,其中所述电介质材料的第一层是氮化硅和第二层是二氧化硅和正硅酸四乙酯的至少一种,和所述第二层限定开孔的侧壁。
14.权利要求1所述的化学设备,进一步包括:
微流体结构,其与所述化学灵敏的场效应晶体管流体流动通信,并且布置为递送分析物用于测序。
15.制造化学设备的方法,所述方法包括:
形成化学灵敏的场效应晶体管,其包括包含彼此电耦联的多个浮栅导体的浮栅结构;
形成与所述多个浮栅导体中的最上浮栅导体叠加和通信的导电元件,所述导电元件比所述最上浮栅导体更宽和更薄;和
形成限定延伸至所述导电元件的上表面的开孔的电介质材料。
16.权利要求15所述的制造化学设备的方法,其中所述导电元件的所述上表面限定所述化学设备的反应区域的底部表面。
17.权利要求15所述的制造化学设备的方法,其中所述电介质材料的内表面和所述导电元件的上表面限定所述化学设备的反应区域的外边界。
18.权利要求15所述的制造化学设备的方法,其中所述导电元件在仅仅在所述化学设备的传感器区域中的导电层中形成。
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US20140264471A1 (en) | 2014-09-18 |
US9823217B2 (en) | 2017-11-21 |
EP2972281B1 (en) | 2023-07-26 |
JP2016510894A (ja) | 2016-04-11 |
JP6671274B2 (ja) | 2020-03-25 |
US10481124B2 (en) | 2019-11-19 |
CN105051525B (zh) | 2019-07-26 |
WO2014149779A1 (en) | 2014-09-25 |
US20180180572A1 (en) | 2018-06-28 |
EP2972281A1 (en) | 2016-01-20 |
US20160153930A1 (en) | 2016-06-02 |
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