CN102420220A - 电路装置及其制造方法 - Google Patents

电路装置及其制造方法 Download PDF

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Publication number
CN102420220A
CN102420220A CN2011102847697A CN201110284769A CN102420220A CN 102420220 A CN102420220 A CN 102420220A CN 2011102847697 A CN2011102847697 A CN 2011102847697A CN 201110284769 A CN201110284769 A CN 201110284769A CN 102420220 A CN102420220 A CN 102420220A
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Prior art keywords
lead
wire
circuit
junction surface
island portion
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CN2011102847697A
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English (en)
Inventor
真下茂明
堀内文夫
工藤清昭
樱井章
稻垣裕纪
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Semiconductor Components Industries LLC
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On Semiconductor Trading Ltd
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Application filed by On Semiconductor Trading Ltd filed Critical On Semiconductor Trading Ltd
Priority to CN201710466498.4A priority Critical patent/CN107301955A/zh
Publication of CN102420220A publication Critical patent/CN102420220A/zh
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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Abstract

本发明公开了一种电路装置及其制造方法。该电路装置是具有良好的散热性的小型的电路装置。在本发明的混合集成电路装置(10)中，在电路基板(12)的上面固定安装有引线(18)及引线(20)。引线(18)具有岛部(28)、倾斜部(30)及引线部(32)，在岛部(28)的上面安装有晶体管(22)及二极管(24)。设置于晶体管(22)及二极管(24)的上面的电极经由金属细线(26)和接合部(34)相连接。引线(18)的接合部(34)被设置在相比岛部(28)位于上方的位置，从而与接合部(34)相连接的金属细线(26)彼此分开。

Description

电路装置及其制造方法
技术领域
本发明涉及一种电路装置及其制造方法，尤其涉及内置有对大电流进行开关的功率型半导体元件的电路装置及其制造方法。
背景技术
下面，参照图9对现有的混合集成电路装置100的结构进行说明(参照下述的专利文献1)。在矩形基板101的表面上，隔着绝缘层102形成有导电图案103，在该导电图案103上固定安装有电路元件，从而形成规定的电路。在此，半导体元件105A和芯片元件105B作为电路元件与导电图案103相连接。引线104和形成在基板101的周边部的由导电图案103构成的焊盘109相连接，并且具有作为外部端子的功能。密封树脂108具有密封形成于基板101表面的电路的功能。
半导体元件105A是导通例如数安培～数百安培左右的大电流的功率型元件，发热量非常大。因此，半导体元件105A载置于在导电图案103上载置的散热片110的上部。散热片110由例如高×宽×厚＝10mm×10mm×1mm左右的铜等金属片构成。
专利文献1：(日本)特开平5-102645号公报
但是，在具有上述结构的混合集成电路装置100中，如果在基板101的上面形成逆变电路等用于变换大电流的电路，则需要扩大用于确保电流容量的导电图案103的宽度，这阻碍了混合集成电路装置100的小型化。而且，为了确保散热性，需要对应每个半导体元件准备散热片，这也导致成本上升。
发明内容
鉴于以上问题，本发明主要目的是提供一种具有良好的散热性的小型电路装置及其制造方法。
本发明的电路装置的特征在于，具有：电路基板；多条引线，每条该引线具有固定安装在所述电路基板的上面的岛部、经由倾斜部和所述岛部相连续并且从所述电路基板的上面离开的接合部、和所述接合部相连续并向外部引出的引线部；电路元件，安装在所述岛部的上面并且经由连接装置和所述接合部相连接。
本发明的电路装置的制造方法的特征在于，具有：准备引线框架的工序，该引线框架由多条具有岛部、经由倾斜部和所述岛部相连续的接合部、和所述接合部相连续并向外部引出的引线部的引线构成；将电路元件和所述接合部经由连接装置连接的工序，该电路元件安装在所述岛部的上面，所述接合部设置在相比所述岛部位于上方的位置；将所述岛部的下面固定安装在电路基板的上面的工序；密封所述电路基板及所述电路元件的工序。
根据本发明，将经由倾斜部相连续的岛部和接合部设置在引线上，将岛部固定安装于电路基板的上面，并且将接合部设置在从电路基板的上面离开的上方位置。然后，安装于岛部的电路元件和接合部经由连接装置相连接。由此，防止了例如由金属细线构成的连接装置相互接触而短路，所以能够通过多条引线及连接装置形成逆变电路等比较复杂的电路。
附图说明
图1是表示本发明的电路装置的视图，(A)是立体图，(B)是剖面图。
图2是表示本发明的电路装置的俯视图。
图3(A)、(B)是表示本发明的电路装置的一部分的剖面图。
图4是表示本发明的电路装置的视图，(A)是表示要安装的逆变电路的电路图，(B)是表示引出引线的俯视图，(C)是表示引线的剖面图。
图5是表示本发明的其他形式的电路装置的剖面图。
图6是表示本发明的电路装置的制造方法的视图，(A)是俯视图，(B)是剖面图。
图7是表示本发明的电路装置的制造方法的视图，(A)是俯视图，(B)是剖面图。
图8是表示本发明的电路装置的制造方法的视图，(A)是剖面图，(B)是俯视图。
图9是表示背景技术的混合集成电路装置的剖面图。
附图标记说明
10混合集成电路装置；12电路基板；14控制基板；16密封树脂；18引线；18A、18B、18C、18D、18E、18F、18G、18H、18I、18J引线；20引线；20A、20B、20C、20D、20E、20F、20G、20H、20I、20J、20K、20L  引线；22晶体管；24二极管；26金属细线；28岛部；28D、28E、28F、28J岛部；30倾斜部；32引线部；34接合部；34C、34D、34E、34F接合部；36接合部；38支承部；39支承部；40导电图案；42控制元件；44绝缘层；45电阻；46导电图案；48固定安装材料；50导电图案；52导电图案；54贯通电极；56逆变电路；58引线框架；60单元；62连接杆；64外框；68上模；70下模；72型腔；Q1、Q2、Q3、Q4、Q5、Q6 IGBT；D1、D2、D3、D4、D5、D6二极管。
具体实施方式
下面，参照图1至图5，对作为电路装置的一个例子的混合集成电路装置10的结构进行说明。
首先，参照图1，对本实施方式的混合集成电路装置10的结构进行说明。图1(A)是从斜上方看混合集成电路装置10的立体图。图1(B)是混合集成电路装置10的剖面图。
参照图1(A)及图1(B)，混合集成电路装置10具有：电路基板12、设置在电路基板12的上面的引线18、20、安装在引线18的导部28上的晶体管22和二极管24(电路元件)、将上述电路基板12、引线18、20、晶体管22及二极管24一体地密封的密封树脂16。
电路基板12是以铝(Al)或铜(Cu)等金属为主要材料的金属基板。电路基板12的具体大小为例如高×宽×厚＝30mm×15mm×1.5mm左右。在采用由铝构成的基板作为电路基板12的情况下，电路基板12的两个主面被进行氧化铝膜处理。电路基板12的上面及侧面被密封树脂16覆盖，而下面向外部露出。由此，能够使散热片与露出的电路基板12的表面抵接，从而提高散热性。而且，为了确保耐湿性及绝缘耐压性，也可以通过密封树脂16覆盖电路基板12的下面。
参照图1(B)，在纸面左侧设置有引线18，而右侧设置有引线20。在此，多条引线18、20沿着电路基板12的相向的两个侧边设置，但是，可以沿着一侧边仅设置引线18，另外，引线也可以沿着四个侧边设置。
沿着电路基板12的一侧边设置有多条引线18。引线18构成为从内侧开始具有岛部28、倾斜部30、接合部34及引线部32。在岛部28的上面通过焊锡等导电性固定安装剂固定安装有晶体管22及二极管24。而岛部28的下面固定安装于电路基板12的上面。由此，晶体管22及二极管24在工作时产生的热量经由岛部28及电路基板12很好地向外部散热。而且，通过在引线18的中间部设置倾斜部30，将电路基板12的左上部的端部和引线18分开，防止两者之间发生短路。另外，接合部34是经由金属细线26(例如，直径为20μm～500μm的铝线)和晶体管22及二极管24连接的部位。关于通过金属细线26进行连接的结构，将在后面参照图4(B)进行说明。另外，引线部32是从密封树脂16向外部导出用于插入安装等的端子部。
在与引线18相向的位置设置有多条引线20。引线20构成为从内侧开始具有接合部36、倾斜部39及引线部38。接合部36固定安装在电路基板12的上面，并且与安装在岛部28上的晶体管22的控制电极电连接。而且，引线部38经由倾斜部39从密封树脂16向外部引出。
引线18和引线20的功能不同。具体来说，通过在引线18上安装晶体管22和二极管24以构成逆变电路。即，引线18还具有作为导通通过逆变电路变换前的直流电或者变换后的交流电的通路的功能。而且，引线18由厚度为500μm左右的较厚的铜等金属构成，所以也具有散热片的功能。另一方面，引线20和晶体管22的控制电极相连接，具有导通控制信号的连接端子的功能。
在图中，晶体管22等经由一条金属细线26相连接，但也可以经由多条(例如两条、三条)金属细线26进行晶体管22的电连接。而且，还可以采用通过带状接合形成的金属箔代替金属细线来作为连接晶体管22等的连接装置。
下面，参照图2对引线18、20的结构进行说明。参照该图，引线18A～18H和引线20A～20H被设置为相互相向。
在引线18A～18H中，设置在左右端部的引线18A、18H是从外部供给直流电流的引线，引线18C、18D、18E输出通过内置的逆变电路变换的三相交流电的引线。而且，用于检测电流值的电阻45设置在引线18A和引线18B之间。
在引线18C～18E各自的上面安装有构成三相逆变电路的晶体管以及二极管。关于这方面内容，将在后面参照图4进行说明。
在引线20A～20L中，引线20A、20B经由金属细线分别和引线18A、18B相连接，用于检测电流值。引线20C～20H和安装在引线18C～18H上的晶体管的控制电极相连接。具体来说，当晶体管是IGBT时，这些引线18C～18H连接在IGBT的栅极电极上。
下面，参照图3(A)及图3(B)的剖面图，对引线的岛部28固定安装于电路基板12的上面的结构进行说明。
参照图3(A)，由铝等金属构成的电路基板12的上面被绝缘层44覆盖。绝缘层44由充填有高浓度例如60重量％～80重量％左右的Al2O3等填充物的环氧树脂等构成。在绝缘层44的表面形成有由厚度为50μm左右的铜等金属构成的导电图案46，在该导电图案46的上面通过焊锡等固定安装材料48固定安装引线的岛部28。由此，晶体管22工作时所产生的热量经由岛部28、固定安装材料48、导电图案46及电路基板12向外部散热。
在图3(B)中，在绝缘层44的上面没有形成导电图案，岛部28的下面通过导电性或者绝缘性的固定安装材料48固定安装在绝缘层44的上面。
在此，图1(B)所示的引线20的接合部36也通过和上述相同的结构固定安装在电路基板12的上面。
下面，参照图4说明在混合集成电路装置10安装有三相逆变电路时的结构。图4(A)是逆变电路的电路图，图4(B)是表示引线结构的俯视图，图4(C)是引线18的剖面图。
参照图4(A)，逆变电路56由六个IGBT(Q1～Q6)和六个二极管(D1～D6)构成，Q1～Q3是高电位侧的晶体管，Q4～Q6是低电位侧的晶体管。在各IGBT(Q1～Q6)的集电极电极和发射极电极上，反向并联连接有续流二极管(D1～D6)。这样，通过使续流二极管并联连接在IGBT上，可以保护IGBT不会受电感应性负载所产生的反电动势的过电压破坏。在此，还可以使用MOS等其他的晶体管来代替IGBT。
而且，IGBT(Q1)和IGBT(Q4)串联连接，排他性地对IGBT(Q1)和IGBT(Q4)进行开关控制，U相的交流电从两元件的中间点经由引线向外部输出。IGBT(Q2)和IGBT(Q5)串联连接，排他性地对IGBT(Q2)和IGBT(Q5)进行开关控制，V相的交流电从两元件的中间点向外部输出。排他性地对串联连接的IGBT(Q3)和IGBT(Q6)进行开关控制，W相的交流电从两元件的中间点向外部输出。各IGBT的开关由位于装置的外部的控制元件进行控制。
通过这样的结构，输入到逆变电路56的直流电变换成三相(U、V、W)交流电，通过该交流电使作为负载的电动机M驱动旋转。
参照图4(B)，在引线18C～18H所具有的各岛部28C～28H的上面，通过焊锡等导电性固定安装剂固定安装有IGBT及二极管。具体来说，在引线18C的岛部28C上安装有IGBT(Q1)和二极管D1，在引线18D的岛部28D上安装有IGBT(Q2)和二极管D2，在引线18E的岛部28E上安装有IGBT(Q3)和二极管D3，在引线18H的岛部28H上安装有三个IGBT(Q4～Q6)和三个二极管D4～D6。在此，设置在各IGBT的背面的集电极电极及二极管的阳极电极通过焊锡等导电性固定安装剂连接在各岛部的上面。
为了构成逆变电路，安装在各岛部上的晶体管及二极管经由金属细线相连接。在本实施方式中，安装在各引线的岛部上的晶体管及二极管经由金属细线和邻接的引线的接合部相连接。
具体来说，安装在引线18C的岛部28C上的IGBT(Q1)的发射极电极及二极管D1的阴极电极经由金属细线26和引线18B的接合部34B相连接。安装在引线18D的岛部28D上的IGBT(Q2)的发射极电极及二极管D2的阴极电极经由金属细线26和引线18C的接合部34C相连接。安装在引线18E的岛部28E上的IGBT(Q3)的发射极电极及二极管D3的阴极电极经由金属细线26和引线18D的接合部34D相连接。
而且，安装于和直流电源负极侧相连接的岛部28H的IGBT(Q4～Q6)及二极管D4～D6与引线18C～18E的接合部34C～34E相连接。具体来说，IGBT(Q4)的发射极电极及二极管D4的阴极电极经由金属细线26和引线18C的接合部34C相连接。IGBT(Q5)的发射极电极及二极管D5的阴极电极经由金属细线26和引线18D的接合部34D相连接。IGBT(Q6)的发射极电极及二极管D6的阴极电极经由金属细线26和引线18E的接合部34E相连接。
在本实施方式中，以上述方式通过金属细线对邻接的引线彼此进行连接。而且，将IGBT(Q4)及二极管D4和引线18C的接合部34C连接的金属细线26形成为跨越引线18D、18E的上方。如果引线18B～18H的整体处于平坦的状态，则这样复杂地形成的金属细线26之间可能会接触而引起短路。在本实施方式中，如图4(C)所示，连接有金属细线的接合部34经由倾斜部30位于岛部28的上方。由此，即使为了构成逆变电路而使金属细线形成为复杂的形状，也能够防止因金属细线彼此接触而引起短路。
而且，在本实施方式中，如图1(B)所示，在电路基板12的上面没有形成导电图案，在载置于电路基板12的上面的引线18的岛部28上安装有晶体管22和二极管24。即，本实施方式的引线18不仅具有外部输出端子的功能，而且还具有背景技术中的导电图案的功能。引线18的岛部28的厚度为例如500μm左右，比背景技术中形成在电路基板的上面的导电图案的厚度(50μm)厚。因此，与以前的通过将较宽的薄的导电图案来应对数十安培左右的大电流的情况相比，本实施方式的厚的引线18本身具有较宽的截面面积，所以能够使引线18所占的面积比现有的导电图案小。这有助于装置整体的小型化。
下面参照图5，对其他实施方式的混合集成电路装置10A的结构进行说明。图5所示的混合集成电路装置10A的基本结构和图1所示的装置的基本结构相同，不同之处在于在电路基板12的上面固定安装有控制基板14。
具体来说，在电路基板12的纸面左侧的上面固定安装有引线18的岛部28，该结构如上所述。
而且，在电路基板的纸面右侧的上面固定安装有控制基板14，所述控制基板14的上面安装有控制元件42。控制基板14由玻璃环氧基板等廉价的绝缘基板构成，在控制基板14的上面形成有导电图案。而且，树脂封装状态的控制元件42和导电图案相连接。另外，控制元件42经由形成于控制基板14的上面的导电图案及金属细线和晶体管22的控制电极相连接。由此，构成逆变电路的晶体管22基于从控制元件42提供的控制信号被控制。控制元件42和引线20经由控制基板14上的导电图案及金属细线26和纸面右侧的额引线20相连接。
通过将控制元件42内置于混合集成电路装置10A，构成了逆变电路和控制电路一体化的模块，因此能够使装置整体的性能提高。而且，控制元件42安装在载置于由金属材料构成的电路基板12的上面的控制基板14上，所以防止了控制元件42过热。具体来说，即使晶体管22工作时所产生的热量传递到了由金属构成的电路基板12上，也可通过由树脂材料等绝缘材料构成的控制基板14抑制热量向控制元件42传递。
需要说明的是，还可以在电路基板12的表面不设置控制基板14，而将控制元件42安装在直接形成于电路基板12的上面的导电图案上。
下面，参照图6～图8对具有上述结构的混合集成电路装置10的制造方法进行说明。
参照图6，首先准备设置有多条引线18、20的引线框架58。图6(A)是表示设置在引线框架58上的一个单元60的俯视图，图6(B)是表示单元60的剖面图。
参照图6(A)，单元60由构成一个混合集成电路装置的多条引线18、20构成，各引线18、20的一端位于载置有电路基板12的区域内。引线18设置在纸面中单元60内部的左侧，如上所述，引线18上设置有用于安装晶体管和二极管的岛部28。引线20设置在纸面的右侧，具有作为外部连接端子的功能的同时，还具有连接晶体管的控制电极以及机械地支撑控制基板的作用。引线18、20的外侧的端部通过与外框64连续的连接杆62一体地支撑。
如图6(B)所示，纸面左侧的引线18具有岛部28、倾斜部30、接合部34和引线部32。在此，岛部28是安装晶体管等电路元件的部位，接合部34是连接金属细线的部位。另外，纸面右侧的引线20具有接合部36、倾斜部39和引线部38。
在引线框架58中，多个具有上述结构的单元60设置在画框状的外框64的内部，以下的工序对各单元60一同进行。
参照图7，然后将电路元件及电路基板固定安装在引线上。图7(A)是表示本工序的俯视图，图7(B)是剖面图。
具体来说，首先，通过焊锡等导电性固定安装材料将晶体管22的背面电极固定安装在引线18的岛部28上。同样地，将二极管24的背面电极固定安装在引线18的岛部28上。然后，经由金属细线26将晶体管22的电极和设置在引线18的中间部的接合部34相连接。同样地，经由金属细线26将晶体管22的控制电极(栅极电极)和引线20的接合部36相连接。
参照图7(B)，将引线18的岛部28固定安装在电路基板12的上面。岛部28的下面的固定安装在电路基板12的上面的结构也可以如图3(A)所示那样固定安装在形成于电路基板12的上面的导电图案46上，还可以如图3(B)所示那样直接固定安装在覆盖电路基板12的上面的绝缘层44的上面。
在本工序中，为了在各单元60上构建逆变电路，安装在引线18的各岛部28上的晶体管22及二极管24经由金属细线26和接合部34相连接。使用金属细线26进行连接的结构如参照图4进行说明的结构一样。即，在本实施方式中，为了构成逆变电路金属细线26呈复杂的形状，所以，如果引线18为平坦的形状，则有可能金属细线26彼此接触而发生短路。在本实施方式中，通过将和金属细线26连接的接合部34设置在相比岛部18位于上方的位置，从而使金属细线26相互分离以防止发生短路。
在制造图5所示的混合集成电路装置10A时，在电路基板12的上面设置安装有控制元件42的控制基板14，通过金属细线26将该控制基板和晶体管22及引线20相连接。
参照图8，接着形成密封树脂以覆盖电路基板12。图8(A)是表示使用模具模制电路基板12的工序的剖面图，图8(B)是表示模制后的引线框架58的俯视图。
参照图8(A)，首先，将电路基板12以固定在引线框架上的状态收纳在由上模68及下模70形成的型腔72中。在此，通过上模68及下模70夹持引线18、20来固定型腔72内部的电路基板12的位置。然后，从设置在模具上的浇口向型腔72注入树脂，密封电路基板12及各电路元件等。在本工序中，采用使用热硬化性树脂的传递模塑法或者使用热可塑性树脂的注入模塑法。对电路基板12进行密封的结构不限于树脂密封，还可以使用浇注、壳体材料进行密封。
参照图8(B)，在上述模制工序完成之后，通过冲压加工使引线18、20从引线框架58分离。具体来说，在设置有连接杆62的位置将引线18、20分离成个体，从而将如图1所示混合集成电路装置从引线框架58分离。

Claims (10)

1.一种电路装置，其特征在于，具有：
电路基板；
多条引线，每条该引线具有固定安装在所述电路基板的上面的岛部、经由倾斜部和所述岛部相连续并且从所述电路基板的上面离开的接合部、和所述接合部相连续并向外部引出的引线部；
电路元件，安装在所述岛部的上面并且经由连接装置和所述接合部相连接。
2.如权利要求1所述的电路装置，其特征在于，安装在多条所述引线中的第一引线所具有的所述岛部上的所述电路元件和第二引线的所述接合部经由所述连接装置电连接。
3.如权利要求2所述的电路装置，其特征在于，所述第一引线和所述第二引线相邻接。
4.如权利要求2所述的电路装置，其特征在于，在所述第一引线和所述第二引线之间至少设置有一条第三引线，所述连接装置形成为越过所述第三引线的上方。
5.如权利要求1至4中任一项所述的电路装置，其特征在于，所述引线包括：
连接在直流电源的正极侧的第一输入引线、
连接在所述直流电源的负极侧的第二输入引线、
将由自所述第一输入引线及所述第二输入引线输入的直流电变换的交流电输出的输出引线，
在所述第二输入引线的岛部上安装的晶体管的上面设有电极，该电极经由连接装置和所述输出引线具有的接合部相连接，
在所述输出引线的岛部上安装的晶体管的上面设有电极，该电极经由连接装置和所述第一输入引线的接合部相连接。
6.如权利要求1至5中任一项所述的电路装置，其特征在于，安装有控制所述电路元件的控制元件的控制基板设置在所述电路基板的上面。
7.一种电路装置的制造方法，其特征在于，具有：
准备引线框架的工序，该引线框架由多条具有岛部、经由倾斜部和所述岛部相连续的接合部、和所述接合部相连续并向外部引出的引线部的引线构成；
将电路元件和所述接合部经由连接装置连接的工序，该电路元件安装在所述岛部的上面，所述接合部设置在相比所述岛部位于上方的位置；
将所述岛部的下面固定安装在电路基板的上面的工序；
密封所述电路基板及所述电路元件的工序。
8.如权利要求7所述的电路装置的制造方法，其特征在于，在所述将电路元件和所述接合部经由连接装置连接的工序中，所述电路元件和第二引线的所述接合部经由所述连接装置电连接，所述电路元件安装在多条所述引线中的第一引线所具有的所述岛部上。
9.如权利要求8所述的电路装置的制造方法，其特征在于，所述第一引线和所述第二引线相邻接。
10.如权利要求8所述的电路装置的制造方法，其特征在于，在所述第一引线和所述第二引线之间至少设置有一条第三引线，所述连接装置形成为越过所述第三引线的上方。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104064825A (zh) * 2013-03-22 2014-09-24 三星Sdi株式会社 用于电池组的保护装置、制造保护装置的方法及电池组
CN104282861A (zh) * 2013-07-01 2015-01-14 三星Sdi株式会社 电池组的保护装置和制造该保护装置的方法
CN110520987A (zh) * 2017-03-28 2019-11-29 罗姆股份有限公司 半导体器件和半导体器件的制造方法
CN113711237A (zh) * 2019-04-24 2021-11-26 京瓷株式会社 Rfid标签

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5749468B2 (ja) * 2010-09-24 2015-07-15 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置およびその製造方法
US9111847B2 (en) * 2012-06-15 2015-08-18 Infineon Technologies Ag Method for manufacturing a chip package, a method for manufacturing a wafer level package, a chip package and a wafer level package
JP6130238B2 (ja) 2013-06-14 2017-05-17 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
JP6162643B2 (ja) * 2014-05-21 2017-07-12 三菱電機株式会社 半導体装置
JP6345583B2 (ja) * 2014-12-03 2018-06-20 ルネサスエレクトロニクス株式会社 半導体装置
US9778687B1 (en) * 2014-12-11 2017-10-03 Amazon Technologies, Inc. Over-mold foam enclosure
TWI550391B (zh) * 2015-10-23 2016-09-21 台達電子工業股份有限公司 整合功率模組封裝結構
JP6203307B2 (ja) * 2016-03-10 2017-09-27 三菱電機株式会社 半導体装置及びその製造方法
JP6790684B2 (ja) * 2016-09-30 2020-11-25 富士電機株式会社 半導体装置
US11476179B2 (en) 2016-10-25 2022-10-18 Tesla, Inc. Inverter
US10629519B2 (en) * 2016-11-29 2020-04-21 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
JP2018107364A (ja) * 2016-12-28 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置
US10362699B2 (en) 2017-03-09 2019-07-23 Amazon Technologies, Inc. Low density electronic device
JP6780675B2 (ja) * 2017-07-24 2020-11-04 株式会社デンソー 半導体装置及び半導体装置の製造方法
CN208189579U (zh) * 2018-05-31 2018-12-04 苏州同泰新能源科技有限公司 一种电子刹车飞轮片
JP7109347B2 (ja) * 2018-12-03 2022-07-29 三菱電機株式会社 半導体装置および電力変換装置
CN110571210B (zh) * 2019-08-08 2021-11-19 深圳市晶导电子有限公司 Led驱动电源的集成电路、制造方法及led驱动电源
CN110854096A (zh) * 2019-11-20 2020-02-28 上海道之科技有限公司 一种新型封装的分立器件
JP7286582B2 (ja) * 2020-03-24 2023-06-05 株式会社東芝 半導体装置
US20230363097A1 (en) * 2022-05-04 2023-11-09 Wolfspeed, Inc. Dual inline power module

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610799A (en) * 1994-04-21 1997-03-11 Mitsubishi Denki Kabushiki Kaisha Power module device
JPH10135380A (ja) * 1996-10-31 1998-05-22 Hitachi Ltd 半導体装置
JPH11307721A (ja) * 1998-04-23 1999-11-05 Toshiba Corp パワーモジュール装置およびその製造方法
JP2000138343A (ja) * 1998-10-30 2000-05-16 Mitsubishi Electric Corp 半導体装置
US6291880B1 (en) * 1998-02-12 2001-09-18 Hitachi, Ltd. Semiconductor device including an integrally molded lead frame
US6313598B1 (en) * 1998-09-11 2001-11-06 Hitachi, Ltd. Power semiconductor module and motor drive system
JP2005150595A (ja) * 2003-11-19 2005-06-09 Mitsubishi Electric Corp 電力用半導体装置

Family Cites Families (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668032A (en) * 1982-04-08 1987-05-26 Harris Corporation Flexible solder socket for connecting leadless integrated circuit packages to a printed circuit board
US4558397A (en) * 1983-12-19 1985-12-10 Amp Incorporated Interposer connector for surface mounting a ceramic chip carrier to a printed circuit board
JPS6480032A (en) * 1987-09-21 1989-03-24 Hitachi Maxell Semiconductor device and manufacture thereof
US5151039A (en) * 1990-04-06 1992-09-29 Advanced Interconnections Corporation Integrated circuit adapter having gullwing-shaped leads
JPH04284661A (ja) * 1991-03-13 1992-10-09 Toshiba Corp 半導体装置
US5352925A (en) * 1991-03-27 1994-10-04 Kokusai Electric Co., Ltd. Semiconductor device with electromagnetic shield
JP2951102B2 (ja) 1991-05-23 1999-09-20 三洋電機株式会社 混成集積回路
JP2705368B2 (ja) * 1991-05-31 1998-01-28 株式会社デンソー 電子装置
US5646827A (en) * 1991-05-31 1997-07-08 Nippondenso Co., Ltd. Electronic device having a plurality of circuit boards arranged therein
JP2765278B2 (ja) * 1991-05-31 1998-06-11 株式会社デンソー 電子装置の製造方法
US5586388A (en) * 1991-05-31 1996-12-24 Nippondenso Co., Ltd. Method for producing multi-board electronic device
EP0516149B1 (en) * 1991-05-31 1998-09-23 Denso Corporation Electronic device
JPH0697237A (ja) * 1992-09-10 1994-04-08 Hitachi Ltd 半導体装置及びその製造方法
US6084309A (en) * 1992-10-20 2000-07-04 Fujitsu Limited Semiconductor device and semiconductor device mounting structure
JPH06295962A (ja) * 1992-10-20 1994-10-21 Ibiden Co Ltd 電子部品搭載用基板およびその製造方法並びに電子部品搭載装置
US5557144A (en) * 1993-01-29 1996-09-17 Anadigics, Inc. Plastic packages for microwave frequency applications
US5539254A (en) * 1994-03-09 1996-07-23 Delco Electronics Corp. Substrate subassembly for a transistor switch module
JPH07272849A (ja) * 1994-03-31 1995-10-20 Nippondenso Co Ltd 薄膜ｅｌ表示器とその製造方法
KR0179803B1 (ko) * 1995-12-29 1999-03-20 문정환 리드노출형 반도체 패키지
US5834336A (en) * 1996-03-12 1998-11-10 Texas Instruments Incorporated Backside encapsulation of tape automated bonding device
JP2891665B2 (ja) * 1996-03-22 1999-05-17 株式会社日立製作所 半導体集積回路装置およびその製造方法
US5659462A (en) * 1996-04-12 1997-08-19 Lucent Technologies Inc. Encapsulated, integrated power magnetic device and method of manufacture therefor
JPH10200037A (ja) * 1996-11-14 1998-07-31 Nittetsu Semiconductor Kk リードフレーム及びこれを用いた半導体装置
JPH10199912A (ja) * 1997-01-16 1998-07-31 Hitachi Ltd 半導体装置
JPH10242374A (ja) * 1997-02-27 1998-09-11 Oki Electric Ind Co Ltd 半導体装置
JPH11288751A (ja) * 1998-04-03 1999-10-19 Alps Electric Co Ltd プリント配線基板への端子の取付構造
GB2338827B (en) * 1998-06-27 2002-12-31 Motorola Gmbh Electronic package assembly
US6315465B1 (en) * 1998-12-21 2001-11-13 Sumitomo Electric Industries, Ltd. Optical module
JP3685947B2 (ja) * 1999-03-15 2005-08-24 新光電気工業株式会社 半導体装置及びその製造方法
JP3708779B2 (ja) * 1999-03-29 2005-10-19 セイコーエプソン株式会社 液晶表示装置、平面型表示装置及びこれを備えた電子機器
US6740969B1 (en) * 1999-08-25 2004-05-25 Renesas Technology Corp. Electronic device
KR100342589B1 (ko) * 1999-10-01 2002-07-04 김덕중 반도체 전력 모듈 및 그 제조 방법
KR100370231B1 (ko) * 2000-06-13 2003-01-29 페어차일드코리아반도체 주식회사 리드프레임의 배면에 직접 부착되는 절연방열판을구비하는 전력 모듈 패키지
US20040080056A1 (en) * 2001-03-30 2004-04-29 Lim David Chong Sook Packaging system for die-up connection of a die-down oriented integrated circuit
US6891257B2 (en) * 2001-03-30 2005-05-10 Fairchild Semiconductor Corporation Packaging system for die-up connection of a die-down oriented integrated circuit
JP3877642B2 (ja) * 2002-05-21 2007-02-07 ローム株式会社 半導体チップを使用した半導体装置
JP2004273749A (ja) * 2003-03-07 2004-09-30 Fuji Electric Fa Components & Systems Co Ltd 半導体パワーモジュール
JP2005191147A (ja) * 2003-12-24 2005-07-14 Sanyo Electric Co Ltd 混成集積回路装置の製造方法
JP4270095B2 (ja) * 2004-01-14 2009-05-27 株式会社デンソー 電子装置
CN100386876C (zh) * 2004-03-26 2008-05-07 乾坤科技股份有限公司 多层基板堆叠封装结构
JP4413054B2 (ja) * 2004-03-29 2010-02-10 三洋電機株式会社 混成集積回路装置の製造方法
JP2005327967A (ja) * 2004-05-17 2005-11-24 Renesas Technology Corp 半導体装置
JP4338620B2 (ja) * 2004-11-01 2009-10-07 三菱電機株式会社 半導体装置及びその製造方法
JP2006216940A (ja) * 2005-01-07 2006-08-17 Toshiba Corp 半導体装置
JPWO2006085466A1 (ja) * 2005-02-14 2008-06-26 松下電器産業株式会社 アンテナ内蔵半導体メモリモジュール
WO2006088270A1 (en) * 2005-02-15 2006-08-24 Unisemicon Co., Ltd. Stacked package and method of fabricating the same
TWI303094B (en) * 2005-03-16 2008-11-11 Yamaha Corp Semiconductor device, method for manufacturing semiconductor device, and cover frame
CN100420017C (zh) * 2005-05-18 2008-09-17 乾坤科技股份有限公司 具有混合线路与复合基板的封装结构
CN100456473C (zh) * 2005-07-08 2009-01-28 乾坤科技股份有限公司 功率电源模块的封装结构
US8796836B2 (en) * 2005-08-25 2014-08-05 Micron Technology, Inc. Land grid array semiconductor device packages
KR20080031446A (ko) * 2005-08-31 2008-04-08 산요덴키가부시키가이샤 회로 장치 및 그 제조 방법
JP2007116013A (ja) * 2005-10-24 2007-05-10 Renesas Technology Corp 半導体装置及びそれを用いた電源装置
EP1795496A2 (en) * 2005-12-08 2007-06-13 Yamaha Corporation Semiconductor device for detecting pressure variations
US7981702B2 (en) * 2006-03-08 2011-07-19 Stats Chippac Ltd. Integrated circuit package in package system
TW200743032A (en) * 2006-05-10 2007-11-16 Siliconware Precision Industries Co Ltd Semiconductor package and method for manufacturing the same
US20080017998A1 (en) * 2006-07-19 2008-01-24 Pavio Jeanne S Semiconductor component and method of manufacture
KR20080022452A (ko) * 2006-09-06 2008-03-11 삼성전자주식회사 Ｐｏｐ 패키지 및 그의 제조 방법
US20080099922A1 (en) * 2006-10-30 2008-05-01 Noriaki Sakamoto Circuit device and manufacturing method thereof
US7957158B2 (en) * 2006-10-31 2011-06-07 Sanyo Electric Co., Ltd. Circuit device
KR100814433B1 (ko) * 2006-11-22 2008-03-18 삼성전자주식회사 리드 프레임 유닛, 이를 갖는 반도체 패키지 및 이의 제조방법, 이를 포함하는 반도체 스택 패키지 및 이의 제조방법
US7622793B2 (en) * 2006-12-21 2009-11-24 Anderson Richard A Flip chip shielded RF I/O land grid array package
US7550828B2 (en) * 2007-01-03 2009-06-23 Stats Chippac, Inc. Leadframe package for MEMS microphone assembly
US7701054B2 (en) * 2007-02-12 2010-04-20 Infineon Technologies Ag Power semiconductor module and method for its manufacture
JP4862697B2 (ja) * 2007-03-08 2012-01-25 パナソニック株式会社 スイッチ装置
JP4863953B2 (ja) * 2007-08-30 2012-01-25 日立オートモティブシステムズ株式会社 物理量変換センサ及びそれを用いたモータ制御システム
JP4588060B2 (ja) * 2007-09-19 2010-11-24 スパンション エルエルシー 半導体装置及びその製造方法
JP5163055B2 (ja) * 2007-10-30 2013-03-13 三菱電機株式会社 電力半導体モジュール
EP2120263A4 (en) * 2007-11-30 2010-10-13 Panasonic Corp BASE PLATE FOR A HITZEABLEITENDE STRUCTURE, MODULE WITH THE BASE PLATE FOR THE HITZEABLEITENDE STRUCTURE AND METHOD FOR THE PRODUCTION OF THE BASE PLATE FOR THE HITZEABLEITENDE STRUCTURE
US7776658B2 (en) * 2008-08-07 2010-08-17 Alpha And Omega Semiconductor, Inc. Compact co-packaged semiconductor dies with elevation-adaptive interconnection plates
GB0815870D0 (en) * 2008-09-01 2008-10-08 Cambridge Silicon Radio Ltd Improved qfn package
US8084301B2 (en) * 2008-09-11 2011-12-27 Sanyo Electric Co., Ltd. Resin sheet, circuit device and method of manufacturing the same
JP5500870B2 (ja) * 2009-05-28 2014-05-21 新光電気工業株式会社 接続端子付き基板及び電子部品のソケット等
JP2011044452A (ja) * 2009-08-19 2011-03-03 Denso Corp 電子装置およびその製造方法
JP5524540B2 (ja) * 2009-09-01 2014-06-18 株式会社東海理化電機製作所 電流センサ
JP5106519B2 (ja) * 2009-11-19 2012-12-26 Ｎｅｃアクセステクニカ株式会社 熱伝導基板及びその電子部品実装方法
JP5749468B2 (ja) * 2010-09-24 2015-07-15 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置およびその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610799A (en) * 1994-04-21 1997-03-11 Mitsubishi Denki Kabushiki Kaisha Power module device
JPH10135380A (ja) * 1996-10-31 1998-05-22 Hitachi Ltd 半導体装置
US6291880B1 (en) * 1998-02-12 2001-09-18 Hitachi, Ltd. Semiconductor device including an integrally molded lead frame
JPH11307721A (ja) * 1998-04-23 1999-11-05 Toshiba Corp パワーモジュール装置およびその製造方法
US6313598B1 (en) * 1998-09-11 2001-11-06 Hitachi, Ltd. Power semiconductor module and motor drive system
JP2000138343A (ja) * 1998-10-30 2000-05-16 Mitsubishi Electric Corp 半導体装置
JP2005150595A (ja) * 2003-11-19 2005-06-09 Mitsubishi Electric Corp 電力用半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104064825A (zh) * 2013-03-22 2014-09-24 三星Sdi株式会社 用于电池组的保护装置、制造保护装置的方法及电池组
CN104282861A (zh) * 2013-07-01 2015-01-14 三星Sdi株式会社 电池组的保护装置和制造该保护装置的方法
CN104282861B (zh) * 2013-07-01 2018-09-11 三星Sdi株式会社 电池组的保护装置和制造该保护装置的方法
CN110520987A (zh) * 2017-03-28 2019-11-29 罗姆股份有限公司 半导体器件和半导体器件的制造方法
CN110520987B (zh) * 2017-03-28 2023-10-27 罗姆股份有限公司 半导体器件和半导体器件的制造方法
CN113711237A (zh) * 2019-04-24 2021-11-26 京瓷株式会社 Rfid标签

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US9722509B2 (en) 2017-08-01
CN107301955A (zh) 2017-10-27
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