CN106165089B - 半导体模块以及搭载有半导体模块的驱动装置 - Google Patents

半导体模块以及搭载有半导体模块的驱动装置 Download PDF

Info

Publication number
CN106165089B
CN106165089B CN201480077639.8A CN201480077639A CN106165089B CN 106165089 B CN106165089 B CN 106165089B CN 201480077639 A CN201480077639 A CN 201480077639A CN 106165089 B CN106165089 B CN 106165089B
Authority
CN
China
Prior art keywords
semiconductor module
sealing body
resin
lead frame
insulating sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480077639.8A
Other languages
English (en)
Other versions
CN106165089A (zh
Inventor
伏江俊祐
川野佑
浅尾淑人
森昭彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN106165089A publication Critical patent/CN106165089A/zh
Application granted granted Critical
Publication of CN106165089B publication Critical patent/CN106165089B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49568Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49517Additional leads
    • H01L23/49524Additional leads the additional leads being a tape carrier or flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49558Insulating layers on lead frames, e.g. bridging members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861Lead-frames fixed on or encapsulated in insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247Connecting the strap to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73221Strap and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73263Layer and strap connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49517Additional leads
    • H01L23/4952Additional leads the additional leads being a bump or a wire
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Abstract

在绝缘片材一体结构的半导体模块中,使绝缘片材的至少一个部位嵌入模塑内部,并由半导体模块的密封树脂体和绝缘片材形成凸部,由于采用这种结构,因此能抑制绝缘片材的剥离,从而提高半导体模块的可靠性。

Description

半导体模块以及搭载有半导体模块的驱动装置
技术领域
本发明涉及对电动马达进行驱动的半导体模块、以及搭载有半导体模块的驱动装置。
背景技术
近年来,具备IGBT(Insulated Gate Bipolar Transistor:绝缘栅双极晶体管)、功率MOSFET等功率半导体元件的半导体模块要求半导体封装具有高绝缘性、且散热性良好。作为用于实现这种半导体封装的手段,存在有高热传导性绝缘片材一体化结构的半导体模块(例如参照专利文献1、2)。
现有技术文献
专利文献
专利文献1:日本专利特开2005-353805号公报
专利文献2:日本专利第5279632号公报
发明内容
发明所要解决的技术问题
然而,现有技术存在如下问题。
在专利文献1所记载的现有技术中,绝缘片材有很大可能发生剥离,而且在后续工序中必须将绝缘片材或密封树脂的毛刺去除。此外,在专利文献2所记载的以往的方法中,需要将绝缘片材弯曲的附加工序,因此不利于小型化。
本发明为了解决上述问题而完成,其目的在于获得一种能抑制绝缘片材剥离的半导体模块以及搭载有半导体模块的驱动装置。
解决技术问题所采用的技术方案
本发明的半导体模块包括:引线框架,该引线框架由多个安装有电子元器件的终端构成;绝缘片材,该绝缘片材与引线框架平行地配置在引线框架的安装有电子元器件的面的背面侧;以及树脂密封体,该树脂密封体将引线框架、电子元器件以及绝缘片材密封,绝缘片材的与引线框架相接的面的背面侧的周边部分的至少一部分被树脂密封体覆盖,且相当于周边部分以外的部分的中央部分作为未被树脂密封体密封的区域而露出。
此外,搭载有本发明的半导体模块的驱动装置包括本发明的半导体模块以及散热器,该散热器定位成与未被树脂密封体密封的区域相接,从而搭载半导体模块。
发明效果
根据本发明,使绝缘片材的至少一处嵌入模塑内部,并由半导体模块的密封树脂体和绝缘片材形成凸部,通过这种结构,可获得能够抑制绝缘片材剥离的半导体模块以及搭载有半导体模块的驱动装置。此外,由于绝缘片材的毛刺配置在凸部内,因此无需在之后的工序中去除。
附图说明
图1是以安装于车辆的动力转向装置为例来示出应用了本发明实施方式1的半导体模块的装置的整体电路图。
图2是对本发明实施方式1的半导体模块的半完成状态进行透视得到的图。
图3是本发明实施方式1的半导体模块的剖视图。
图4是本发明实施方式1的半导体模块的透视图。
图5是示出将本发明实施方式1的半导体模块安装于散热器的状态的剖视图。
图6是本发明实施方式1的半导体模块的剖视图。
图7是本发明实施方式1的半导体模块的剖视图。
图8是本发明实施方式2的半导体模块的剖视图。
图9是本发明实施方式2的半导体模块的透视图。
图10是示出将本发明实施方式2的半导体模块安装于散热器的状态的剖视图。
图11是本发明实施方式3的半导体模块的剖视图。
图12是本发明实施方式4的半导体模块的剖视图以及透视图。
图13是本发明实施方式5的半导体模块的剖视图。
图14是本发明实施方式5的半导体模块的其它剖视图。
具体实施方式
下面,利用附图对本发明的半导体模块以及搭载有半导体模块的驱动装置的优选实施方式进行说明。此外,各图中对相同或相当的部分标注相同标号来进行说明。
实施方式1.
图1是以安装于车辆的动力转向装置为例来示出应用了本发明实施方式1的半导体模块的装置的整体电路图。该装置由电动机1、控制单元2构成,且两个部位形成为一体。
控制单元2包含:由微机8及其周边电路构成的控制电路部20;电源继电器4;以及功率电路部3,该功率电路部3具备向电动机绕组供电的逆变器。
控制单元2输入有来自电池、车速传感器、转矩传感器的电源等的各种信息,利用微机8运算方向盘辅助量,并经由前置驱动器(pre-driver)9输出到逆变器3。此外,对来自检测电动机1的旋转的旋转传感器7的信号进行传输的旋转传感器I/F、以及对提供给电动机1的电流进行测定的电流监视器I/F10与微机相连。
电源部接受电池电力而工作,由用于抑制噪声的扼流线圈6、平滑电容器5、以及连接或切断电源线的继电器4构成,并向逆变器3提供电源。逆变器3与电动机1的三相绕组相对应地具备三组、共计六个上下臂的开关元件11~16。此外,各相分别配置有起到能连接、切断向电动机1的供电的继电器作用的开关元件17~19。
这些开关元件(11~16、17~19)与各绕组相对应地存在,因此标注u、v、w来命名。此外,用于控制各开关元件的端子Gh、Gl、Gm分别经由前置驱动器9与微机8相连。
并且,为了监视上下臂的开关元件11~16间的电压,使用三个端子Mm,并且使用电流检测用分流电阻22的上游监视端子Sh端子。它们的监视值经由电流监视器I/F10传递到微机8。另外,还使用电动机1的各相绕组端子Mu、Mv、Mw。
逆变器3作为内置有多个开关元件的半导体模块,由单个元器件构成。该半导体模块由于内置有多个开关元件,因此也内置有多个连接各元器件的电路,并且也具有多个端子。此外,用于向电动机1供电的电流也较大,需要提高散热性。因此,从在本装置中所占的规模、质量、成本等方面考虑,半导体模块是较为重要的元器件。
下面,利用图2及其之后的附图对本发明主旨的半导体模块的结构进行说明。图2是对本发明实施方式1的半导体模块的半完成状态进行透视得到的图。图3是本发明实施方式1的半导体模块的剖视图。图4是本发明实施方式1的半导体模块的透视图。
如图3所示,半导体模块在热固化性树脂的绝缘片材32的上部配置有安装了多个半导体元件以及其它电子元器件等的引线框架25。并且,如图4所示,是利用密封树脂31对绝缘片材32的中央部分以外的部分进行了模塑的结构。下面,对各部分进行详细说明。
引线框架25通过使用铜或铁类的合金材料对一块金属板材进行冲压加工、蚀刻加工或切割加工来进行制造,并且各个部位遍布引线框架25而互不重合。此外,冲压加工具有量产性较高的优点,蚀刻加工具有交货期较短的优点,切割加工具有低成本的优点。
在芯片安装面上分别搭载例如U相FET11、12、17这三个来作为半导体芯片,同样,V相、W相也具有FET,总共配置了九个。如图2所示,半导体芯片之间、或引线框架25之间通过铜或铁类材料的梁部28相连,这些梁部28跨过引线框架25的上方。并且,多个端子、即终端在图2中向下方伸出。
配置在引线框架25的安装电子元器件一侧的相对面的绝缘片材32(参照图3)适用环氧树脂等热固化性树脂。然而,本发明并不限于环氧树脂,也能适用其它公知的热固化性树脂。
为了抑制覆盖绝缘片材32的密封树脂31的剥离,将由密封树脂31和绝缘片材32形成的凸部的高度t1和宽度t2的关系设为:
t2>t1
(参照图3)。
此外,为了抑制绝缘片材32的变形,导出到密封树脂31外部的终端采用了端部较密封树脂31的凸部更嵌入到内侧(相当于图3中t3>t2的关系)的结构。并且,导出到外部的终端附近的密封树脂31的凸部与其它部位相比,该凸部的宽度更大,从而抑制密封树脂31的剥离(图3中,左侧凸部的t2大于右侧凸部的t2)。
接着,对本实施方式1的半导体模块的制造方法进行说明。
首先,在成形模具的腔体内配置绝缘片材32,并在其上部放置安装了半导体元件、电子元器件等的引线框架25。此时,绝缘片材32和引线框架25通过位于模具上的固定销或活动销来定位。此外,为了提高与引线框架25的密接性,绝缘片材32配置成绝缘片材32的毛刺、塌边朝向引线框架25的相反侧。
此外,绝缘片材32的中央部处于与腔体内的下模直接相接的状态。之后,成形模具被密封,通过将环氧树脂等热固化性树脂填充到腔体内,从而形成密封树脂31。并且,在将密封树脂31和绝缘片材32完成固化后,最后对不需要的引线框架区域(参照图1中用29表示的斜线区域)进行切割、冲压,由此完成半导体模块。另外,也可以不用密封树脂31覆盖各部位,而采用形成外框并用硅树脂将其中部覆盖的结构。
如此形成的半导体模块采用绝缘片材32的外周部嵌入到密封树脂31内部的结构,因而能抑制绝缘片材32的剥离(参照图3)。而且,由于绝缘片材32的毛刺、塌边也嵌入到密封树脂内部,因此无需在之后的工序中去除,提高了制造效率。将绝缘片材32的公差考虑在内来决定嵌入的尺寸,优选为公差的两倍以上。此外,密封树脂31为凹形状,因此能用于定位。而且,密封树脂31成为最外部,因而能防止绝缘片材32弄脏、损坏。
接着,对本实施方式1的半导体模块的散热性进行说明。图5是示出将本发明实施方式1的半导体模块安装于散热器35的状态的剖视图。本实施方式1的半导体模块的绝缘片材32的中央部露出,并且采用与散热器35直接接触的结构。因此,功率半导体元件的发热会经由引线框架25、绝缘片材32传递到散热器35。
绝缘片材32的毛刺、塌边嵌入到密封树脂31内部。因此,半导体模块不会倾斜,能与散热器35平行并且以最短距离配置引线框架25。其结果是,引线框架25与散热器35之间的热阻也变小,能获得高散热性能。
此外,图6是本发明实施方式1的半导体模块的剖视图,示出了降低热阻的结构。如该图6所示,利用框架36等从半导体模块的上部按压,从而能进一步降低引线框架25与散热器35之间的热阻。
此外,图7是本发明实施方式1的半导体模块的剖视图,示出了降低热阻的其它结构。如该图7所示,通过在绝缘片材32与散热器35之间涂布导热膏37,从而能与图6的结构同样,进一步降低引线框架25与散热器35之间的热阻。
如上所述,根据实施方式1,在引线框架的安装电子元器件的面背侧的面配置与引线框架平行的绝缘片材。而且,包括用于将绝缘片材的整个四周连同安装电子元器件的引线框架一起进行密封的密封树脂(树脂密封体),从而形成半导体模块。其结果是,可实现能抑制绝缘片材剥离的半导体模块。
并且,还能获得以下效果。
·由于采用在密封树脂内部覆盖绝缘片材的毛刺、塌边的结构,因此无需在之后的工序中去毛刺,从而提高了半导体模块的生产效率。
·能将凸形状活用于定位。
·密封树脂成为最外部,因而能防止绝缘片材弄脏、损坏。
实施方式2.
接着,参照图8~图10对实施方式2的半导体模块进行如下说明。图8是本发明实施方式2的半导体模块的剖视图。图9是本发明实施方式2的半导体模块的透视图。图10是示出将本发明实施方式2的半导体模块安装于散热器35的状态的剖视图。
本实施方式2的半导体模块与之前实施方式1的半导体模块的不同之处在于,为了保护绝缘片材32,防止其开裂、缺口等,在绝缘片材32的与引线框架25一侧相反的面具备金属箔33。因此,下文以伴随上述不同点产生的变更部分为中心进行说明,并省略与上述半导体模块相同构成部分的说明。
本实施方式2中,考虑操作性而使用将绝缘片材32与金属箔33形成为一体而成的片材。并且,与之前的实施方式1同样,提高了绝缘片材32与引线框架25的密接性。并且,为了避免金属箔33与引线框架25的接触,配置成绝缘片材25与金属箔33形成为一体而成的片材的毛刺、塌边朝向引线框架25的相反侧。
并且,绝缘片材32与金属箔33的端部也与上述的实施方式1同样,使它们的整个四周嵌入到密封树脂31。其结果是,成为能抑制引线框架25与绝缘片材32之间、以及绝缘片材32与金属箔33之间的剥离的结构。而且,由于绝缘片材32的毛刺、塌边也嵌入到密封树脂31内部,因此无需在之后的工序中去除,提高了制造效率。另外,若考虑加工性,则金属箔33的厚度优选为100μm左右。
本实施方式2中,使用将绝缘片材32与金属箔33形成为一体而成的片材,但本发明并不限于此。也可以在利用密封树脂31进行模塑时安装金属箔33。
如上所述,根据实施方式2,还包括金属箔来形成半导体模块。其结果是,能获得与之前的实施方式1同样的效果,还能利用金属箔来保护绝缘片材,防止其开裂、缺口等。
实施方式3.
接着,参照图11对实施方式3的半导体模块进行如下说明。图11是本发明实施方式3的半导体模块的剖视图。
本实施方式3的半导体模块与上述的实施方式2同样采用了具备金属箔33的结构,但与上述的实施方式2的不同之处在于使金属箔33的尺寸小于绝缘片材32的尺寸。由此,引线框架25与金属箔33的爬电距离增加,提高了绝缘性能。
如上所述,根据实施方式3,具备尺寸比绝缘片材要小的金属箔来形成半导体模块。其结果是,能获得与之前的实施方式2同样的效果,并能进一步提高绝缘性能。
实施方式4.
接着,参照图12对实施方式4的半导体模块进行如下说明。图12是本发明实施方式4的半导体模块的剖视图以及透视图。
本实施方式4的半导体模块与之前的实施方式1同样,采用不具备金属箔33的结构。与之前的实施方式1的不同之处在于,绝缘片材32嵌入密封树脂31部的部位并非整个四周,而仅为两边。下文以伴随上述不同点产生的变更部分为中心进行说明,并省略与上述半导体模块相同构成部分的说明。
本实施方式4中,绝缘片材32a并非整个四周嵌入密封树脂部31a,而是仅两边嵌入密封树脂部31a。其结果是,与之前的实施方式1的半导体模块相比,绝缘片材32a的露出部位的面积较大,能增大与散热器35的接触面积。由此,能降低半导体模块的热阻、即能降低引线框架25与散热器35之间的热阻,其结果是,能提高散热性能。
而且,由于露出的绝缘片材32a的区域扩大,因此能扩大半导体元件等电子元器件的可安装范围。其结果是,能实现半导体模块的高密度安装以及小型化。
如上所述,根据实施方式4,采用不使绝缘片材的整个四周嵌入密封树脂部,而是仅两边嵌入密封树脂部的结构,来形成半导体模块。其结果是,能降低半导体模块的热阻,并且也能实现高密度安装以及小型化。
实施方式5.
接着,参照图13对实施方式5的半导体模块进行如下说明。图13是本发明实施方式5的半导体模块的剖视图。
本实施方式5的半导体模块为了增加其热容而具备金属块38来代替之前实施方式2~4中所内置的金属箔33。下文以伴随上述不同点产生的变更部分为中心进行说明,并省略与上述半导体模块相同构成部分的说明。
本实施方式5的半导体模块由于具备金属块38,因而增加了热容。其结果是,能降低半导体模块过渡性的温度上升。金属块38的厚度需要根据金属块38的比热、密度、热传导率等物理特性以及半导体模块的发热量来决定,但越厚效果越好。
此外,图14是本发明实施方式5的半导体模块的其它剖视图,是例示出与之前图13所示的金属块38不同形状的金属块38a的图。通过如该图14所示金属块38a那样与散热器形成为一体,从而能进一步降低过渡性的温度上升。
如上所述,根据实施方式5,采用具备金属块代替金属箔的结构来形成半导体模块。其结果是,能增加半导体模块的热容。而且,通过使该金属块与散热器形成为一体,从而还能实现进一步降低过渡性的温度上升的效果。

Claims (13)

1.一种半导体模块,其特征在于,包括:
引线框架,该引线框架由安装有电子元器件的多个终端构成;
绝缘片材,该绝缘片材与所述引线框架平行地配置在所述引线框架的安装有所述电子元器件的面的背面侧;以及
树脂密封体,该树脂密封体将所述引线框架、所述电子元器件以及所述绝缘片材密封,
所述绝缘片材具有外周部嵌入所述树脂密封体的内部的结构,所述绝缘片材的与所述引线框架相接的面的背面侧的周边部分被所述树脂密封体覆盖,且为了使相当于所述周边部分以外的部分的中央部分与散热器直接接触,使其作为未被所述树脂密封体密封的区域而露出,
所述引线框架具有导出到所述树脂密封体外部的终端,以及未导出到所述树脂密封体外部的部分,
利用所述树脂密封体对所述引线框架进行密封,抑制所述树脂密封体的剥离,从而使得在将由所述树脂密封体密封所述周边部分时的树脂宽度设为t2,并将所述终端的被包含在所述树脂密封体内部的终端宽度设为t3时,至少一处具有关系:t3>t2,且关于所述树脂宽度t2,导出到所述树脂密封体外部的终端附近的覆盖所述绝缘片材的树脂宽度变得大于未导出到所述树脂密封体外部的部分附近的覆盖所述绝缘片材的树脂宽度。
2.如权利要求1所述的半导体模块,其特征在于,
所述绝缘片材具有相当于金属箔或金属块的金属构件,该金属构件以所述绝缘片材的尺寸以下的大小,与所述引线框架平行地配置在与所述引线框架相接的面的背面侧,
所述树脂密封体将所述引线框架、所述电子元器件、以及具有所述金属构件的所述绝缘片材密封,
所述绝缘片材的具有所述金属构件的背面侧的周边部分的至少一部分被所述树脂密封体覆盖,且相当于所述周边部分以外的部分的中央部分作为未被所述树脂密封体密封的区域而使得所述金属构件露出。
3.如权利要求1所述的半导体模块,其特征在于,
利用所述树脂密封体进行密封,使得在将由所述树脂密封体密封所述周边部分时的树脂高度设为t1,树脂宽度设为t2时,具有关系:t2>t1。
4.如权利要求2所述的半导体模块,其特征在于,
利用所述树脂密封体进行密封,使得在将由所述树脂密封体密封所述周边部分时的树脂高度设为t1,树脂宽度设为t2时,具有关系:t2>t1。
5.如权利要求1至4的任一项所述的半导体模块,其特征在于,
所述树脂密封体形成为所述周边部分中所述终端所在的正下方位置处的树脂宽度大于其它位置的树脂宽度。
6.如权利要求1至4的任一项所述的半导体模块,其特征在于,
所述绝缘片材的塌边或毛刺的方向朝向与所述引线框架相接的面的背面侧。
7.如权利要求5所述的半导体模块,其特征在于,
所述绝缘片材的塌边或毛刺的方向朝向与所述引线框架相接的面的背面侧。
8.如权利要求1至4的任一项所述的半导体模块,其特征在于,
所述电子元器件配置在作为未被所述树脂密封体密封的区域而露出的部分所对应范围内的引线框架上。
9.如权利要求5所述的半导体模块,其特征在于,
所述电子元器件配置在作为未被所述树脂密封体密封的区域而露出的部分所对应范围内的引线框架上。
10.如权利要求6所述的半导体模块,其特征在于,
所述电子元器件配置在作为未被所述树脂密封体密封的区域而露出的部分所对应范围内的引线框架上。
11.如权利要求7所述的半导体模块,其特征在于,
所述电子元器件配置在作为未被所述树脂密封体密封的区域而露出的部分所对应范围内的引线框架上。
12.一种搭载有半导体模块的驱动装置,其特征在于,包括:
权利要求1至11的任一项所述的半导体模块;以及
散热器,该散热器被定位成与未被所述树脂密封体密封的区域相接,从而搭载所述半导体模块。
13.如权利要求12所述的搭载有半导体模块的驱动装置,其特征在于,
还包括框架结构,该框架结构从所述半导体模块的上部将所述半导体模块向所述散热器一侧按压。
CN201480077639.8A 2014-03-28 2014-03-28 半导体模块以及搭载有半导体模块的驱动装置 Active CN106165089B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/059253 WO2015145752A1 (ja) 2014-03-28 2014-03-28 半導体モジュールおよび半導体モジュールを搭載した駆動装置

Publications (2)

Publication Number Publication Date
CN106165089A CN106165089A (zh) 2016-11-23
CN106165089B true CN106165089B (zh) 2020-06-09

Family

ID=54194338

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480077639.8A Active CN106165089B (zh) 2014-03-28 2014-03-28 半导体模块以及搭载有半导体模块的驱动装置

Country Status (5)

Country Link
US (1) US10373896B2 (zh)
EP (1) EP3125287B1 (zh)
JP (1) JP6192809B2 (zh)
CN (1) CN106165089B (zh)
WO (1) WO2015145752A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6526323B2 (ja) 2016-04-04 2019-06-05 三菱電機株式会社 パワーモジュール、パワー半導体装置及びパワーモジュール製造方法
JP2018085495A (ja) * 2016-11-25 2018-05-31 京セラ株式会社 発光素子用基板、発光素子モジュールおよび発光装置
WO2018146799A1 (ja) * 2017-02-10 2018-08-16 三菱電機株式会社 半導体装置および電力変換装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10261744A (ja) * 1997-01-17 1998-09-29 Toshiba Corp 半導体装置及びその製造方法
JP2011134949A (ja) * 2009-12-25 2011-07-07 Mitsubishi Electric Corp 半導体装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2833916B2 (ja) * 1992-02-26 1998-12-09 九州日本電気株式会社 半導体装置
JPH06209054A (ja) 1993-01-08 1994-07-26 Mitsubishi Electric Corp 半導体装置
JP3429921B2 (ja) * 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置
JPH10125826A (ja) 1996-10-24 1998-05-15 Hitachi Ltd 半導体装置及びその製法
JP3547333B2 (ja) * 1999-02-22 2004-07-28 株式会社日立産機システム 電力変換装置
TW445615B (en) * 2000-08-04 2001-07-11 Siliconware Precision Industries Co Ltd Semiconductor package with enhanced heat dissipation function
JP2002368165A (ja) 2001-06-11 2002-12-20 Denso Corp 樹脂封止型半導体装置
JP2005353805A (ja) 2004-06-10 2005-12-22 Toshiba Corp 半導体装置及びその製造方法
KR100765604B1 (ko) * 2004-11-26 2007-10-09 산요덴키가부시키가이샤 회로 장치 및 그 제조 방법
TW200642550A (en) * 2005-05-25 2006-12-01 Cyntec Co Ltd Power module package structure
US7808100B2 (en) * 2008-04-21 2010-10-05 Infineon Technologies Ag Power semiconductor module with pressure element and method for fabricating a power semiconductor module with a pressure element
JP4634498B2 (ja) * 2008-11-28 2011-02-16 三菱電機株式会社 電力用半導体モジュール
DE102009002993B4 (de) * 2009-05-11 2012-10-04 Infineon Technologies Ag Leistungshalbleitermodul mit beabstandeten Schaltungsträgern
JP5279632B2 (ja) 2009-06-25 2013-09-04 三菱電機株式会社 半導体モジュール
JP5263189B2 (ja) * 2010-01-29 2013-08-14 株式会社デンソー 半導体パッケージの防水構造
JP5598189B2 (ja) * 2010-09-08 2014-10-01 株式会社デンソー 半導体装置の製造方法
JP2012108011A (ja) * 2010-11-18 2012-06-07 Tokyo Electric Power Co Inc:The 事故点標定方法
JP5858135B2 (ja) * 2012-02-22 2016-02-10 三菱電機株式会社 半導体装置
US9978662B2 (en) * 2013-09-11 2018-05-22 Mitsubishi Electric Corporation Semiconductor device and manufacturing method for same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10261744A (ja) * 1997-01-17 1998-09-29 Toshiba Corp 半導体装置及びその製造方法
JP2011134949A (ja) * 2009-12-25 2011-07-07 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
CN106165089A (zh) 2016-11-23
EP3125287B1 (en) 2021-11-03
EP3125287A4 (en) 2017-12-13
EP3125287A1 (en) 2017-02-01
JP6192809B2 (ja) 2017-09-06
JPWO2015145752A1 (ja) 2017-04-13
US10373896B2 (en) 2019-08-06
WO2015145752A1 (ja) 2015-10-01
US20160351480A1 (en) 2016-12-01

Similar Documents

Publication Publication Date Title
CN111373524B (zh) 功率半导体装置及其制造方法
EP1881530A1 (en) Power semiconductor apparatus
US8368203B2 (en) Heat radiation member for a semiconductor package with a power element and a control circuit
JP6115738B2 (ja) 半導体装置およびその製造方法
US20140151146A1 (en) Mold module utilized as power unit of electric power steering apparatus and electric power steering apparatus
JP6302803B2 (ja) パワー半導体モジュール及びその製造方法、電力変換装置
CN107078127B (zh) 电力用半导体装置及其制造方法
US10249558B2 (en) Electronic part mounting heat-dissipating substrate
US8995142B2 (en) Power module and method for manufacturing the same
US10818573B2 (en) Power semiconductor module with heat dissipation plate
JP6407302B2 (ja) 半導体駆動装置
US9196561B2 (en) Semiconductor device to be attached to heat radiation member
CN106298700B (zh) 半导体装置
CN113016068A (zh) 半导体模块、功率转换装置及半导体模块的制作方法
CN111095537B (zh) 半导体装置及具备该半导体装置的功率转换装置
CN106165089B (zh) 半导体模块以及搭载有半导体模块的驱动装置
JP2018142620A (ja) パワー半導体装置
US20170085190A1 (en) Three-phase inverter module
JP2009206406A (ja) パワー半導体装置
CN113113401A (zh) 半导体电路和半导体电路的制造方法
KR20220129587A (ko) 파워 모듈 패키지 및 패키징 기술들
CN113261095A (zh) 半导体装置、半导体装置的制造方法及电力转换装置
CN106415831B (zh) 半导体模块

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant