JP6302803B2 - パワー半導体モジュール及びその製造方法、電力変換装置 - Google Patents
パワー半導体モジュール及びその製造方法、電力変換装置 Download PDFInfo
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- JP6302803B2 JP6302803B2 JP2014182844A JP2014182844A JP6302803B2 JP 6302803 B2 JP6302803 B2 JP 6302803B2 JP 2014182844 A JP2014182844 A JP 2014182844A JP 2014182844 A JP2014182844 A JP 2014182844A JP 6302803 B2 JP6302803 B2 JP 6302803B2
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- power semiconductor
- semiconductor module
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- thermal conductor
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Classifications
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/20927—Liquid coolant without phase change
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- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
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- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
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- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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- H01L2924/181—Encapsulation
Description
12 筺体
13 冷却水入口
14 冷却水出口
16 下部ケース
18 交流ターミナル
19 流路
22 駆動回路基板
43 インバータ回路
110 ハイブリッド自動車
112 前輪
114 前輪車軸
116 デファレンシャルギア
118 変速機
120 エンジン
122 動力配分機構
136 バッテリ
138 直流コネクタ
140 インバータ回路
142 インバータ回路
155 上アーム用IGBT
156 ダイオード
157 下アーム用IGBT
172 制御回路
174 ドライバ回路
180 電流センサ
192 モータジェネレータ
194 モータジェネレータ
195 モータ
200 電力変換装置
230 入力積層配線板
300 パワー半導体装置
321 交流端子
500 コンデンサモジュール
501 積層配線板
505 負極電極リードフレーム
507 正極電極リードフレーム
514 コンデンサセル
702 正極側電極リードフレーム
704 負極側電極リードフレーム
900 封止樹脂
900A 封止樹脂面
901 シール部
910 放熱部
919A フィン
911 リードフレーム
912 タイバー
920 高熱伝導体
920A 高熱伝導体
920B 高熱伝導体
930 コレクタ側リード組み
931 エミッタ側リード組み
940 絶縁層
945 温度センサ
950 リード組立体
960 トランスファーモールド金型
961 トランスファーモールド金型
965 プランジャー
1000 流路形成体
1001 壁面
1200 プレート
Claims (10)
- 直流電流を交流電流に変換するパワー半導体素子と、前記パワー半導体素子と対向する高熱伝導体と、がトランスファーモールド樹脂で封止されているパワー半導体モジュールであって、
前記トランスファーモールド樹脂の前記高熱伝導体側の封止樹脂面から凹となるように形成された放熱フィンを備え、
前記フィンは、前記トランスファーモールド樹脂と、前記高熱伝導体により形成されていて、
前記フィン先端部には、前記トランスファーモールド樹脂が設けられていて、
前記凹の底面は前記高熱伝導体の切削面であり、
前記フィンを形成する前記トランスファーモールド樹脂と、前記トランスファーモールド樹脂の前記高熱伝導体側の封止樹脂面の少なくとも一部は、概略同一平面上にあるパワー半導体モジュール。 - 請求項1に記載のパワー半導体モジュールであって、
前記フィンは、前記高熱伝導体を封止する前記トランスファーモールド樹脂と前記高熱伝導体を溝状に研削することにより、形成されるパワー半導体モジュール。 - 請求項1または2に記載のパワー半導体モジュールであって、
シール部材を配置するためのシール部を有するパワー半導体モジュール。 - 請求項1乃至3の何れかに記載のパワー半導体モジュールであって、
前記フィンは、ピンフィン形状に形成されるパワー半導体モジュール - 請求項1乃至4のいずれかに記載のパワー半導体モジュールであって、
前記高熱伝導体は、カーボン含有材料により形成されるパワー半導体モジュール。 - 請求項1乃至5のいずれかに記載のパワー半導体モジュールであって、
前記トランスファーモールド樹脂は、表面がめっきされているパワー半導体モジュール。 - 直流電流を交流電流に変換するパワー半導体素子と、前記パワー半導体素子と熱的に接続される高熱伝導体と、を、前記高熱伝導体の表面に樹脂が回り込むように金型と高熱伝導体との間に隙間が形成されるように金型にセットし、金型内にトランスファーモールド樹脂を注入するトランスファーモールド工程と、
前記高熱伝導体の表面に形成された樹脂と前記高熱伝導体とを切削加工して溝を形成することで、フィンを形成する切削工程と、を備えるパワー半導体モジュールの製造方法。 - 請求項7に記載のパワー半導体モジュールの製造方法であって、
前記トランスファーモールド工程において、前記トランスファーモールド樹脂は、前記高熱伝導体の前記パワー半導体素子が配置される側とは反対側の面を覆って封止されるパワー半導体モジュールの製造方法。 - 前記隙間は、100μmである請求項8に記載のパワー半導体モジュールの製造方法。
- 請求項1乃至6のいずれかに記載のパワー半導体モジュールと、
前記パワー半導体モジュールが配置される流路形成体と、を備え、
前記フィンは、前記流路形成体の流路に向かって突出する電力変換装置。
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PCT/JP2015/066428 WO2016038956A1 (ja) | 2014-09-09 | 2015-06-08 | 電力変換装置 |
DE112015003295.9T DE112015003295T5 (de) | 2014-09-09 | 2015-06-08 | Leistungsumsetzungsvorrichtung |
CN201580048565.XA CN106716813B (zh) | 2014-09-09 | 2015-06-08 | 电力转换装置 |
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