JP6663485B2 - パワー半導体モジュール、それを用いた電力変換装置及び電力変換装置の製造方法 - Google Patents
パワー半導体モジュール、それを用いた電力変換装置及び電力変換装置の製造方法 Download PDFInfo
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- JP6663485B2 JP6663485B2 JP2018516256A JP2018516256A JP6663485B2 JP 6663485 B2 JP6663485 B2 JP 6663485B2 JP 2018516256 A JP2018516256 A JP 2018516256A JP 2018516256 A JP2018516256 A JP 2018516256A JP 6663485 B2 JP6663485 B2 JP 6663485B2
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- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
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Description
Claims (14)
- パワー半導体を収納するとともに流路形成体に固定されるケースと、
冷媒に接触する第1固定材と、
前記第1固定材及び前記流路形成体に接しかつ前記第1固定材の前記ケースの水圧による変位方向を覆う第2固定材と、を備えるパワー半導体モジュール。 - 請求項1に記載のパワー半導体モジュールであって、
前記第1固定材の弾性率が前記第2固定材より低いパワー半導体モジュール。 - 請求項1又は2のいずれかに記載のパワー半導体モジュールであって、
前記第1固定材が樹脂であるパワー半導体モジュール。 - 請求項1乃至3のいずれかに記載のパワー半導体モジュールであって、
前記第1固定材が樹脂硬化物であるパワー半導体モジュール。 - 請求項1乃至4のいずれかに記載のパワー半導体モジュールであって、
前記第2固定材が樹脂硬化物であるパワー半導体モジュール。 - 請求項1乃至5のいずれかに記載のパワー半導体モジュールであって、
前記第1固定材の弾性率が0.1MPa以上1GPa以下であり、前記第2固定材の弾性率が4GPa以上であるパワー半導体モジュール。 - 請求項1乃至6のいずれかに記載のパワー半導体モジュールであって、
前記第1固定材は120℃2気圧の飽和水蒸気に168時間暴露した後の重量減少率が10%以下であるパワー半導体モジュール。 - 請求項1乃至7のいずれかに記載のパワー半導体モジュールであって、
前記第1固定材はチキソ性が1.5以上の樹脂の硬化物であるパワー半導体モジュール。 - 請求項1乃至8のいずれかに記載のパワー半導体モジュールであって、
前記第1固定材は傾斜材料の低弾性率部であり、第2固定材は、前記傾斜材料の高弾性率部であるパワー半導体モジュール。 - 請求項1乃至9のいずれかに記載のパワー半導体モジュールであって、
前記第1固定材はシリコーン樹脂であるパワー半導体モジュール。 - 請求項1乃至9のいずれかに記載のパワー半導体モジュールであって、
前記第1固定材はウレタン樹脂であるパワー半導体モジュール。 - 請求項1乃至11のいずれかに記載のパワー半導体モジュールであって、
前記第2固定材は紫外線硬化型樹脂であるパワー半導体モジュール。 - 請求項1乃至11のいずれかに記載のパワー半導体モジュールを備える電力変換装置であって、
前記ケースの外面との間で流路を形成する流路形成体と、を備える電力変換装置。 - パワー半導体を収納するケースを流路形成体の流路に収納する第1工程と、
前記流路に流れる冷媒に接触するように第1固定材を配置する第2工程と、
前記第1固定材及び前記流路形成体に接しかつ前記第1固定材の前記ケースの水圧による変位方向を覆うように第2固定材を配置する第3工程と、を備え、
前記第1固定材又は前記第2固定材もしくは前記第1固定材及び前記第2固定材は、液状樹脂を硬化することにより形成する電力変換装置の製造方法。
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