CN109659284B - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN109659284B
CN109659284B CN201811155047.XA CN201811155047A CN109659284B CN 109659284 B CN109659284 B CN 109659284B CN 201811155047 A CN201811155047 A CN 201811155047A CN 109659284 B CN109659284 B CN 109659284B
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CN109659284A (zh
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大原孝太
松本学
大坪义贵
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Mitsubishi Electric Corp
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Abstract

得到能够充分地抑制装置上表面的温度上升的半导体装置。在基座板(1)之上安装有半导体芯片(2、3)。壳体(4)在基座板(1)之上将半导体芯片(2、3)包围。电极端子(6)与半导体芯片(2、3)连接。封装材料(8)在壳体(4)的内部对半导体芯片(2、3)进行封装。在封装材料(8)的上方将盖(9)固定于壳体(4)。电极端子(6)未在封装材料(8)的上表面露出。在封装材料(8)的上表面与盖(9)的下表面之间设置有空隙(10)。

Description

半导体装置
技术领域
本发明涉及半导体装置。
背景技术
就在以通用逆变器为代表的各种功率电子设备中使用的半导体装置、例如IGBT模块而言，要求高可靠性。另外，还同时要求是能够应用于SiC半导体装置的封装方式，其中，从动作温度高，效率优异的方面出发，该SiC半导体装置成为今后的主流的可能性高。因此，作为对壳体内部的半导体芯片和配线进行绝缘封装的树脂，出于提高可靠性的目的而推进直接灌封封装树脂的应用。
直接灌封封装树脂是将液态树脂注入至壳体内部之后使其加热固化而得到的封装树脂，不需要如传递模塑那样的模具，其中，该液态树脂是使二氧化硅等填料分散于环氧树脂而得到的。就现有的半导体装置而言，由于高温动作时的半导体芯片的发热，露出于外部空气的树脂上表面的温度变高。对此，提出了下述技术，即，在对半导体芯片进行封装的环氧树脂的上方设置盖，使外部空气接触到从树脂的上表面露出的引线框而进行冷却(例如参照专利文献1)。
专利文献1：日本特开2010-219419号公报
但是，从树脂的上表面露出的引线框的温度高，因此无法充分地抑制装置上表面的温度上升。通过来自装置上表面的辐射热，有可能对在配置于装置上方的控制基板搭载的电子部件的耐久性产生影响。近年来，要求模块的进一步高温动作，该问题变得严重。
发明内容
本发明就是为了解决上述课题而提出的，其目的在于得到能够充分地抑制装置上表面的温度上升的半导体装置。
本发明涉及的半导体装置的特征在于，具有：基座板；半导体芯片，其安装在所述基座板之上；壳体，其在所述基座板之上将所述半导体芯片包围；电极端子，其与所述半导体芯片连接；封装材料，其在所述壳体的内部对所述半导体芯片进行封装；以及盖，其在所述封装材料的上方固定于所述壳体，所述电极端子未在所述封装材料的上表面露出，在所述封装材料的所述上表面与所述盖的下表面之间设置有空隙。
发明的效果
在本发明中，电极端子未在封装材料的上表面露出，在封装材料的上表面与盖的下表面之间设置有空隙。由此，能够充分地抑制装置上表面的温度上升。
附图说明
图1是表示实施方式1涉及的半导体装置的剖视图。
图2是表示实施方式2涉及的半导体装置的剖视图。
图3是表示实施方式3涉及的半导体装置的剖视图。
图4是将图3的卡扣构造放大后的剖视图。
图5是表示实施方式4涉及的半导体装置的剖视图。
图6是表示实施方式5涉及的半导体装置的剖视图。
图7是表示实施方式6涉及的半导体装置的剖视图。
图8是将图7的凸起放大后的剖视图。
图9是表示实施方式7涉及的半导体装置的剖视图。
图10是表示实施方式8涉及的半导体装置的剖视图。
图11是表示实施方式9涉及的半导体装置的剖视图。
标号的说明
1基座板，1a铜基座板，1b树脂绝缘层，1c电路图案，2、3半导体芯片，4壳体，5、7铝导线，6电极端子，8封装材料，9盖，10空隙，11台阶，12卡扣构造，13凸部，14凸起，15、17粘接剂，16柱。
具体实施方式
参照附图对本发明的实施方式涉及的半导体装置进行说明。对相同或对应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1
图1是表示实施方式1涉及的半导体装置的剖视图。基座板1是将依次层叠的铜基座板1a、树脂绝缘层1b以及电路图案1c一体成型而得到的树脂绝缘铜基座板。
在基座板1之上安装有半导体芯片2、3。壳体4在基座板1之上将半导体芯片2、3包围。半导体芯片2的上表面电极经由铝导线5与电路图案1c连接。在壳体4设置的电极端子6经由铝导线7与半导体芯片3连接。
在壳体4的内部对封装材料8进行直接灌封，将基座板1的上表面、电极端子6的一部分、半导体芯片2、3以及铝导线5、7覆盖。封装材料8是导热率大于或等于0.5W/(mK)的热固性环氧树脂。环氧树脂与树脂绝缘铜基座板的密接性高，因此即使温度变化也不易在两者的界面处发生剥离。
在封装材料8的上方，通过嵌合固定或压接等将由绝缘材料构成的盖9固定于壳体4。电极端子6未在封装材料8的上表面露出。露出至外部的盖9的上表面成为装置上表面。在封装材料8的上表面与盖9的下表面之间设置有空隙10。此外，虽然省略了图示，但将对半导体芯片2、3进行控制的控制基板配置于盖9的上方。
在本实施方式中，电极端子6未在封装材料8的上表面露出，在封装材料8的上表面与盖9的下表面之间设置有空隙10。由此，能够充分地抑制装置上表面的温度上升。因此，能够减少辐射热对在半导体装置上部安装的控制基板的影响。
树脂绝缘铜基座板使用树脂作为绝缘材料，因此与陶瓷基板相比导热率差。因此，在基座板1为树脂绝缘铜基座板的情况下，难以向装置下部传递热量。另外，环氧树脂与硅凝胶相比导热率高。因此，在封装材料8为环氧树脂的情况下，容易将热量传递至装置上表面。因此，在上述情况下，装置上表面容易变成高温，因此本实施方式的结构是特别有效的。
盖9例如是聚苯硫醚树脂(PPS：Poly Phenylene Sulfide Resin)。由此，提高阻气性和耐化学性。另外，盖9也可以是金属板或在绝缘材料的内侧设置有金属板。由此，能够通过金属的热屏蔽效果进一步抑制装置上表面的温度上升。
实施方式2
图2是表示实施方式2涉及的半导体装置的剖视图。在壳体4的内侧面设置有对盖9进行固定的台阶11。由此，防止盖9的下沉，提高半导体装置的尺寸精度。其他结构及效果与实施方式1相同。此外，也可以将粘接剂或螺钉用于盖9的固定。
实施方式3
图3是表示实施方式3涉及的半导体装置的剖视图。图4是将图3的卡扣构造放大后的剖视图。在壳体4的内侧面设置有将盖9从上方嵌入而进行嵌合固定的卡扣构造12。由此，半导体装置的组装加工变得容易。其他结构及效果与实施方式1相同。
实施方式4
图5是表示实施方式4涉及的半导体装置的剖视图。在盖9的下表面设置多个凸部13，凸部13的下表面与封装材料8的上表面接触。通过该凸部13能够使盖9相对于封装材料8的高度一致，因此提高了半导体装置的尺寸精度。另外，通过在封装材料8的固化时将盖9的凸部13粘接于封装材料8，从而组装加工变得容易。其他结构及效果与实施方式1相同。此外，也可以使用粘接剂将凸部13粘接于封装材料8。
实施方式5
图6是表示实施方式5涉及的半导体装置的剖视图。凸部13仅设置在盖9的外周部。由此，定位变得容易，组装性提高。其他结构及效果与实施方式4相同。
实施方式6
图7是表示实施方式6涉及的半导体装置的剖视图。图8是将图7的凸起放大后的剖视图。在壳体4的内侧面设置有凸起14。盖9通过与凸起14的压接而固定于壳体4。由此，能够将盖9牢固地固定于壳体4。另外，能够防止盖9的翘起。其他结构及效果与实施方式1相同。
实施方式7
图9是表示实施方式7涉及的半导体装置的剖视图。盖9通过粘接剂15而固定于壳体4。由此，能够将盖9牢固地固定于壳体4。其他结构及效果与实施方式1相同。
实施方式8
图10是表示实施方式8涉及的半导体装置的剖视图。在盖9的下表面设置有延伸至基座板1的上表面为止的柱16。柱16的材料与盖9相同。由此，盖9相对于基座板1的高度被固定，能够防止盖9的下沉，因此半导体装置的尺寸精度提高。另外，通过在封装材料8的固化时将盖9粘接于封装材料8，从而组装变得容易。其他结构及效果与实施方式1相同。
实施方式9
图11是表示实施方式9涉及的半导体装置的剖视图。在封装材料8的上表面与盖9的下表面之间设置有粘接剂17。由此，能够确保空隙10且将盖9牢固地固定。其他结构及效果与实施方式1相同。
此外，半导体芯片2、3并不限定于由硅形成，也可以由带隙比硅大的宽带隙半导体形成。宽带隙半导体例如是碳化硅、氮化镓类材料或金刚石。使用了宽带隙半导体的半导体芯片2、3在高温下进行动作，因此本实施方式的结构是特别有效的。另外，由宽带隙半导体形成的半导体芯片的耐电压性和容许电流密度高，因此能够实现小型化。通过使用该小型化的半导体芯片，从而安装有该半导体芯片的半导体装置也能够实现小型化、高集成化。另外，由于半导体芯片的耐热性高，因此能够使散热器的散热鳍片小型化，能够将水冷部空冷化，因此能够使半导体装置进一步小型化。另外，由于半导体芯片的电力损耗低且高效，因此能够使半导体装置高效化。

Claims (7)

1.一种半导体装置，其特征在于，具有：
基座板；
半导体芯片，其安装在所述基座板之上；
壳体，其在所述基座板之上将所述半导体芯片包围；
电极端子，其与所述半导体芯片连接；
封装材料，其在所述壳体的内部将所述基座板的上表面、所述电极端子的一部分以及所述半导体芯片覆盖；以及
盖，其在所述封装材料的上方固定于所述壳体，
所述电极端子未在所述封装材料的上表面露出，
在所述封装材料的所述上表面与所述盖的下表面之间设置有空隙，
所述封装材料的所述上表面的一部分与所述盖的下表面的一部分通过粘接剂直接粘接，
所述封装材料的所述上表面与所述盖的所述下表面之间没有所述粘接剂的部分构成所述空隙。
2.根据权利要求1所述的半导体装置，其特征在于，
所述基座板是将依次层叠的铜基座板、树脂绝缘层以及电路图案一体成型而得到的树脂绝缘铜基座板，
所述封装材料为环氧树脂。
3.根据权利要求1或2所述的半导体装置，其特征在于，
所述盖为聚苯硫醚树脂。
4.根据权利要求1或2所述的半导体装置，其特征在于，
所述盖具有金属板。
5.根据权利要求1或2所述的半导体装置，其特征在于，
所述半导体芯片由宽带隙半导体形成。
6.根据权利要求3所述的半导体装置，其特征在于，
所述半导体芯片由宽带隙半导体形成。
7.根据权利要求4所述的半导体装置，其特征在于，
所述半导体芯片由宽带隙半导体形成。
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