CN105190874B - 半导体模块及半导体装置 - Google Patents

半导体模块及半导体装置 Download PDF

Info

Publication number
CN105190874B
CN105190874B CN201380076454.0A CN201380076454A CN105190874B CN 105190874 B CN105190874 B CN 105190874B CN 201380076454 A CN201380076454 A CN 201380076454A CN 105190874 B CN105190874 B CN 105190874B
Authority
CN
China
Prior art keywords
radiator
semiconductor module
insulating materials
conductive material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380076454.0A
Other languages
English (en)
Other versions
CN105190874A (zh
Inventor
川濑达也
石原三纪夫
宫本昇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN105190874A publication Critical patent/CN105190874A/zh
Application granted granted Critical
Publication of CN105190874B publication Critical patent/CN105190874B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
    • H01L2224/411—Disposition
    • H01L2224/4112—Layout
    • H01L2224/41175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

散热器(2)具有固定面(2a)、和作为与固定面(2a)相反的面的散热面(2b)。散热片(3)设置于散热面(2b)的中央部。绝缘材料(4)设置于散热器(2)的固定面(2a)上。导电材料(5)设置于绝缘材料(4)上。半导体芯片(6)设置于导电材料(5)上。金属框架(9)与半导体芯片(6)连接。模塑树脂(10)以使散热片(3)露出至外部的方式覆盖散热器(2)、绝缘材料(4)、导电材料(5)、半导体芯片(6)、以及金属框架(9)。设置有将散热器(2)的外周部和模塑树脂(10)的外周部贯穿的孔(11)。通过使螺钉(14)穿入孔(11)中，从而将半导体模块(1)安装于冷却套(15)。

Description

半导体模块及半导体装置
技术领域
本发明涉及一种半导体模块及半导体装置，该半导体模块及半导体装置例如在车载用的电动机控制中进行使用。
背景技术
当前，为了提高粘接性和散热性，将半导体模块隔着脂状物(grease)安装在散热器处。此时，为了抑制翘曲、确保与脂状物之间的密接性，使用按压板和螺钉，将半导体模块向散热器进行安装。例如，公开了下述技术，即，在半导体模块的中央部设置通孔，使螺钉穿入通孔中，利用盘状的弹簧板对半导体模块进行按压并固定(参照专利文献1)。
另外，散热器大多使用螺钉而安装于冷却套。例如，公开了下述半导体模块，即，绝缘基板软钎焊于散热器，半导体芯片固定于该绝缘基板，壳体粘接在散热器的周边部(参照专利文献2)。
专利文献1：日本特开2008－198644号公报
专利文献2：日本特开2009－188176号公报
发明内容
但是，存在脂状物的热导率低、散热性差的问题。另外，为了进行稳定的散热，需要对半导体模块的翘曲进行校正，并固定于散热器，导致部件的个数增多。并且，在专利文献1中，必须在半导体模块的中央部设置通孔，导致模块内部的布局的自由度降低。
另外，如果能够如专利文献2所示，使绝缘基板和散热器一体化，则不需要脂状物，但由于利用粘接剂将树脂壳体固定于散热器，因此导致大型化。并且，由于在壳体内部使用柔软的胶体，因此如果不进行使散热器加厚、使材质采用高强度的材料(例如Cu)等对策，则模块会变形、破损。
本发明就是为了解决上述课题而提出的，其目的在于得到一种半导体模块及半导体装置，该半导体模块及半导体装置能够确保散热性，提高模块内部的布局的自由度，抑制模块的变形、破损。
本发明所涉及的半导体模块的特征在于，具有：散热器，其具有固定面、和作为与所述固定面相反的面的散热面；散热片，其设置于所述散热面的中央部；绝缘材料，其设置于所述散热器的所述固定面上；导电材料，其设置于所述绝缘材料上；半导体芯片，其设置于所述导电材料上；金属框架，其与所述半导体芯片连接；以及模塑树脂，其以使所述散热片露出至外部的方式覆盖所述散热器、所述绝缘材料、所述导电材料、所述半导体芯片、以及所述金属框架，设置将所述散热器的外周部和所述模塑树脂的外周部贯穿的孔，使螺钉穿入所述孔中，从而将所述半导体模块安装于冷却套。
发明的效果
根据本发明，能够确保散热性，提高模块内部的布局的自由度，抑制模块的变形、破损。
附图说明
图1是表示本发明的实施方式1所涉及的半导体模块的剖视图。
图2是表示图1的半导体模块的散热器的散热面的图。
图3是本发明的实施方式1所涉及的半导体模块的俯视图。
图4是本发明的实施方式1所涉及的半导体模块的内部图。
图5是本发明的实施方式1所涉及的半导体模块的电路图。
图6是表示将图1的半导体模块固定在作为冷媒流路的冷却套处的状态的剖视图。
图7是表示图1的半导体模块的金属图案和散热器的制造方法的剖视图。
图8是表示使导电材料的厚度相对于散热器的厚度的比率变化时由于加热所引起的、散热器的翘曲量的模拟解析结果的图。
图9是表示模塑树脂的厚度和产生应力之间的关系的图。
图10是表示本发明的实施方式2所涉及的半导体模块的剖视图。
图11是表示本发明的实施方式2所涉及的半导体模块的俯视图。
图12是表示本发明的实施方式3所涉及的半导体模块的俯视图。
图13是表示本发明的实施方式3所涉及的半导体模块的内部图。
图14是表示本发明的实施方式3所涉及的半导体模块的变形例1的俯视图。
图15是表示本发明的实施方式3所涉及的半导体模块的变形例2的俯视图。
图16是表示本发明的实施方式4所涉及的半导体模块的剖视图。
图17是表示本发明的实施方式5所涉及的半导体模块的剖视图。
图18是表示本发明的实施方式5所涉及的半导体模块的俯视图。
图19是表示本发明的实施方式6所涉及的半导体模块的剖视图。
图20是表示本发明的实施方式6所涉及的半导体模块的俯视图。
图21是表示本发明的实施方式7所涉及的半导体模块的剖视图。
图22是表示本发明的实施方式8所涉及的半导体模块的剖视图。
图23是表示本发明的实施方式8所涉及的半导体模块的内部图。
图24是表示图22的半导体模块的金属图案和散热器的制造方法的剖视图。
图25是表示本发明的实施方式9所涉及的半导体模块的内部图。
图26是表示本发明的实施方式10所涉及的半导体装置的剖视图。
图27是表示本发明的实施方式10所涉及的半导体装置的俯视图。
具体实施方式
参照附图，对本发明的实施方式所涉及的半导体模块进行说明。对相同或相应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1
图1是表示本发明的实施方式1所涉及的半导体模块的剖视图。半导体模块1具有散热器2。散热器2的大小约80mm×80mm左右、厚度为3mm左右，由Al或Cu制成。散热器2具有固定面2a(上表面)、作为与固定面2a相反的面的散热面2b(下表面)。散热片3设置于散热面2b的中央部。
绝缘材料4在未隔着焊料等钎料的状态下设置于散热器2的固定面2a上。绝缘材料4例如是由AlN、Si3N4制成的绝缘基板。为了降低热阻，优选使绝缘材料4的厚度为最小限度的厚度，例如0.635mm。
在作为绝缘基板的绝缘材料4上设置有作为金属图案的导电材料5。使导电材料5的厚度为散热器2的厚度的1倍～1.5倍左右。但是，为了提高散热性，优选绝缘材料4的厚度比导电材料5和散热器2的厚度薄。
半导体芯片6设置于导电材料5上，半导体芯片6的下表面电极通过焊料等导电性接合材料7而与导电材料5接合。金属框架9通过焊料等导电性接合材料8而与半导体芯片6的上表面电极连接。
模塑树脂10以使散热片3露出至外部的方式，覆盖散热器2、绝缘材料4、导电材料5、半导体芯片6、导电性接合材料7、8、以及金属框架9。设置有孔11，该孔11贯穿散热器2的外周部和模塑树脂10的外周部。在本实施方式中，模塑树脂10的上表面的高度是恒定的。
图2是表示图1的半导体模块的散热器的散热面的图。散热片3设置于散热面2b的中央部。散热器2的外周部成为利用模塑树脂10进行封装的封装部。孔11设置于该封装部。散热器2和散热片3的材质既可相同、也可不同。例如，为了提高散热性，作为散热片3的材质，也可以使用与散热器2相比热导率较高的材质。
图3、图4及图5是本发明的实施方式1所涉及的半导体模块的俯视图、内部图、及电路图。在内部图中省略了模塑树脂10。半导体模块是6in1构造，即，将6个开关元件安装于1个模块的构造。
IGBT 12a～12f和正向二极管13a～13f相当于图1的半导体芯片6。金属框架9a～e分别相当于U电极、V电极、W电极、P电极、N电极。
IGBT 12a～12c和正向二极管13a～13c的下表面与导电材料5a连接。IGBT 12d～12f和正向二极管13d～13f的下表面与导电材料5b～5d连接。金属框架9a～c分别与IGBT12a～12c和正向二极管13a～13c的上表面连接，且分别与导电材料5b～5d连接。金属框架9d与导电材料5a连接。金属框架9e与IGBT 12d～12f和正向二极管13d～13f的上表面连接。
图6是表示将图1的半导体模块固定在作为冷媒流路的冷却套处的状态的剖视图。通过将螺钉14穿入半导体模块1的孔11中而插入至冷却套15的螺钉孔中，从而将半导体模块1安装于冷却套15。将O型环等密封件17配置于冷却套15的槽16。
图7是表示图1的半导体模块的金属图案和散热器的制造方法的剖视图。在导电材料5和散热器2的材质相同的情况下，能够在将绝缘材料4保持于铸模18中的状态下，使熔融的金属流入，从而一体地制造二者。此时，通过任意地设定绝缘材料4的位置，从而能够对导电材料5和散热器2的厚度的比率自由地进行变更。此外，作为导电材料5的材料，也可以使用不同于散热器2的材料。在该情况下，针对绝缘材料4的上表面及下表面，将工序分开，使用不同的铸模，使各自的金属流入。
如以上说明所述，在本实施方式中，利用模塑树脂10对半导体芯片6和散热器2进行封装并固定，从而不需要在二者的固定中所使用的螺钉、用于抑制模块的翘曲的板材、脂状物等夹杂物，能够削减部件个数。
另外，由于在半导体芯片6和散热器2之间不需要隔着脂状物，因此能够确保散热性。因此，能够有效地对由半导体芯片6的通电引起的发热进行散热。
另外，由于将安装用的孔11设置于模块外周部，因此能够提高模块内部的布局的自由度。由于在半导体模块1的中央处没有孔11，因此能够配置大于或等于6个开关元件，由此能够利用1个半导体模块实现可驱动电动机的3相用逆变器。
另外，由于连同应力容易集中的螺钉紧固部即孔11的周边在内，利用模塑树脂10对散热器2进行了封装，因此模块整体的强度增加，能够抑制模块的变形、破损。
另外，由于散热器2和绝缘材料4直接接合，因此与利用导电性接合材料将二者接合的构造相比，散热性提高。并且，由于不存在导电性接合材料产生裂纹等问题，因此热循环、功率循环的寿命提高。另外，由于还能够省略接合材料所涉及的接合工序，因此能够降低组装成本。
另外，通过作为绝缘材料4而使用耐力较高的绝缘基板，从而使半导体模块的强度提高。特别地，优选绝缘基板由陶瓷材料制成。由于陶瓷材料的热传导性高，因此半导体模块的散热性提高。
此外，作为绝缘材料4，也可以取代绝缘基板，而将环氧树脂材料等片状的树脂涂敷在固定面2a上。由于片状的树脂是柔软的，因此不容易发生绝缘材料4的脆性破损，功率循环、热循环的寿命提高。另外，由于与绝缘基板相比绝缘片较薄，因此还能够减小半导体模块整体的厚度。在绝缘片上作为导电材料5而设置Cu等散热板，在其上安装半导体芯片6。由于能够通过散热板将由半导体芯片6产生的热量高效地扩散，因此能够抑制半导体模块整体的温度上升。
另外，在导电材料5和半导体芯片6通过导电性接合材料7进行接合的情况下，优选对导电材料5的表面中的、安装半导体芯片6的区域实施镀敷处理。通过实施镀敷处理，使导电材料5和半导体芯片6之间的导电性接合材料7的浸润性提高。
另外，优选散热器2和导电材料5的材料相同。在该情况下，由于能够通过金属的熔液法等同时形成散热器2和导电材料5，因此能够削减制造工序。特别地，优选散热器2和导电材料5的材料是Al或Al合金。由于Al或Al合金重量轻，因此能够降低半导体模块整体的重量。
图8是表示使导电材料的厚度相对于散热器的厚度的比率变化时由于加热所引起的、散热器的翘曲量的模拟解析结果的图。从25℃加热至250℃。散热板2、散热片3、及导电材料5均为Al。绝缘材料4为0.635mm厚的AlN板。纵轴的翘曲量在朝向散热器的散热片侧凸出的情况下取正值。
由于热引起的翘曲在软钎焊工序(250℃左右)、模塑封装工序(180℃左右)中成为组装方面的问题，因此优选翘曲量为230um以内。根据解析结果可知，如果导电材料5的厚度大于或等于散热器2的厚度的1.15倍、而小于或等于1.45倍，则由于散热器2的热引起的翘曲的绝对值为230um以内。
并且，如果将导电材料5的厚度设为散热器2的厚度的1.2～1.4倍，则能够将翘曲抑制为小于或等于120um左右，更为优选。翘曲量变小的厚度比率大于1的理由在于，散热器2覆盖了(密接于)绝缘材料4的下表面的整个面，与此相对，导电材料5未占据绝缘材料4的上表面的整个面，如果散热器2和导电材料5的热膨胀系数相同(相同材质)，则在温度变化时，为了分别相对于绝缘材料4的上下表面产生同等的应力，需要使导电材料5加厚。
另外，翘曲量变小的厚度比率的范围几乎不依赖于散热片3的形状(高度、直径)。在6in1构造中，导电材料5的面积通常为散热器2面积的60～80％左右，在该面积比率的范围(60～80％)内，在厚度比率为1.2～1.4倍的范围内翘曲量的绝对值变小，在大约1.3倍处翘曲量的绝对值变得最小。
关于模塑树脂10的厚度和材质，需要考虑到散热器2对机械应力的耐力(产生规定的永久拉伸时的应力)而进行设计。该设计特别是在作为散热器2的材质，为了实现轻量化而选择Al等低耐力的材质时变得重要。例如，在将散热器2的厚度设为3mm、将材质设为耐力较低的Al的情况下，如果向冷却套进行安装并开始水冷，则由于静水压(0.5～1.0MPa)和封装材料的反作用力(1.0～10.0N/mm)，在螺钉紧固部附近产生的应力超过耐力，引起塑性变形。在应力超过耐力的状态下，变形加剧，有可能发生漏水等。因此，通过使模塑树脂10的厚度增加，从而能够抑制散热器2的变形，降低集中于散热器2的螺钉紧固部周边的应力。图9是表示模塑树脂的厚度和产生应力之间的关系的图。可知，模塑树脂10越厚，则越能够减小产生的应力。
实施方式2
图10及图11是表示本发明的实施方式2所涉及的半导体模块的剖视图及俯视图。在将半导体模块1安装于冷却套15并进行使用的情况下所产生的应力在孔11附近变高。因此，在本实施方式中，在模塑树脂10的外周部设置向上侧凸出的凸出部10a，使孔11附近的模塑树脂10的上表面的高度高于模块中央部的模塑树脂10的上表面的高度。通过使机械应力容易集中的孔11附近的模塑树脂10加厚，从而能够提高模块的强度。另外，由于使模塑树脂10的一部分加厚，因此与使模塑树脂10整体加厚相比，能够削减模塑树脂10的量。
实施方式3
图12及图13是表示本发明的实施方式3所涉及的半导体模块的俯视图及内部图。散热器2具有向外侧凸出的凸出部19。孔11设置于凸出部19处。以与该散热器2相同的形状形成模塑树脂10。由此，能够削减散热器2和模塑树脂10的材料使用量。另外，通过在凸出部19间配置金属框架9d、9e，从而还能够减小半导体模块的所占面积。
图14是表示本发明的实施方式3所涉及的半导体模块的变形例1的俯视图。模塑树脂10的平面形状设为方形，并且在金属框架9d、9e之间设置切口部10b。由此，通过利用模塑树脂10得到沿面距离，从而能够缩小金属框架间的距离。图15是表示本发明的实施方式3所涉及的半导体模块的变形例2的俯视图。变形例2是对实施方式2、3进行组合而得到的，能够得到二者的效果。
实施方式4
图16是表示本发明的实施方式4所涉及的半导体模块的剖视图。对背面进行了金属化的绝缘材料4经由接合材料20而与散热器2的固定面2a接合。接合材料20例如是作为导电性接合材料的焊料。通过接合材料20使用焊料等热传导性良好的材料，虽然半导体模块1的散热性略微比实施方式1的半导体模块差，但与使用了脂状物的现有技术相比，能够稳定地得到极高的散热性。
由于能够在分别制成散热器2和绝缘材料4后将它们接合，因此能够实现半导体模块的小型化。另外，在暂时将散热器2与绝缘材料4接合后、对散热器2或绝缘材料4上的半导体芯片6进行更换的情况下，也能够容易地卸下散热器2而进行更换。
此外，还能够通过对绝缘材料4的上表面进行金属化，从而利用焊料等接合材料将绝缘材料4的上表面和导电材料5接合。在该情况下，也能够在分别制成绝缘材料4和导电材料5后将它们接合。
实施方式5
图17及图18是表示本发明的实施方式5所涉及的半导体模块的剖视图及俯视图。由耐力比散热器2高的材质(Fe等)制成的柱环21插入模塑树脂10的孔11中。由耐力较高的柱环21承受由于螺钉14的紧固所引起的反作用力，因此能够抑制孔11周边的散热器2和模塑树脂10的变形。
另外，如果使柱环21贯穿至散热器2的下表面，则还能够抑制散热器2的变形，能够进一步保持轴向力。另外，优选在柱环21的外侧面设置有至少1个凹凸(例如压花加工)。由此，能够提高模塑树脂10和柱环21之间的密接性，抑制二者的剥离。
实施方式6
图19及图20是表示本发明的实施方式6所涉及的半导体模块的剖视图及俯视图。由耐力比散热器2高的材质(Fe等)制成的板材22设置于散热器2的孔11的周边。由此，能够抑制孔11周边的散热器2相对于螺钉14的紧固所产生的变形。因此，能够抑制模块整体的翘曲，确保与冷却套15之间的密封性。
另外，也可以在板材22的表面设置压花加工。由此，能够确保与散热器2之间的粘接性。并且，优选通过将会向散热器2扩散的材质选择作为板材22的材质，从而使散热器2和板材22在界面处实现了合金化。由此，能够使散热器2的热传导性及耐力等特性局部地部分变化。例如，如果散热器2的材质是Al，则使板材22的材质为Fe。
实施方式7
图21是表示本发明的实施方式7所涉及的半导体模块的剖视图。在散热器2的散热面2b处设置有台阶23，中央部凸出。由此，冷媒变得容易与散热片3的根部接触，散热性能提高。并且，由于散热器2的厚度对应于台阶23的高度进行增加，因此模块的强度也提高。
实施方式8
图22及图23是表示本发明的实施方式8所涉及的半导体模块的剖视图及内部图。在散热器2的固定面2a的外周部设置有引导部24。该引导部24对绝缘材料4的端部进行固定。由此，由于能够使绝缘材料4具有作为骨料的功能，因此能够提高散热器2的强度。
图24是表示图22的半导体模块的金属图案和散热器的制造方法的剖视图。在将绝缘材料4保持于铸模18中的状态下，使熔融的金属流入，从而能够同时制造散热器2、导电材料5和引导部24。
实施方式9
图25是表示本发明的实施方式9所涉及的半导体模块的内部图。导电材料5的平面形状是梳齿状。由此，由于绝缘材料4的上表面中的无导电材料5的非图案部蛇形弯曲，因此与非图案部为直线的模块相比，针对弯曲的强度变高。
实施方式10
图26及图27是表示本发明的实施方式10所涉及的半导体装置的剖视图及俯视图。利用外接的板材25，对半导体模块1进行按压而固定于冷却套15。板材25与半导体模块1接触，利用螺钉14向冷却套15进行了安装。板材25的材质是耐力高且磁导率低的材质(例如Cu)即可。
通过利用耐力高的板材25进行按压，从而能够抑制半导体模块1的翘曲，能够保持与冷却套15之间的密封性。另外，由于能够在螺钉14的紧固部中使用耐力高的材质，因此能够抑制半导体模块1的变形。另外，通过使用磁导率低的材质，从而能够防止在电流流过半导体芯片6时产生的磁场向外部扩散。由此，即使在板材25上放置控制基板等，也能够得到正常的动作，而不受磁场的影响。
标号的说明
1半导体模块，2散热器，2a固定面，2b散热面，3散热片，4绝缘材料，5导电材料，6半导体芯片，9金属框架，10模塑树脂，11孔，14螺钉，15冷却套，19凸出部，21柱环，22板材，24引导部，25板材。

Claims (3)

1.一种半导体模块，其特征在于，具有：
散热器，其具有固定面、和作为与所述固定面相反的面的散热面；
散热片，其设置于所述散热面的中央部；
绝缘材料，其设置于所述散热器的所述固定面上；
导电材料，其设置于所述绝缘材料上；
半导体芯片，其设置于所述导电材料上；
金属框架，其与所述半导体芯片连接；以及
模塑树脂，其以使所述散热片露出至外部的方式覆盖所述散热器、所述绝缘材料、所述导电材料、所述半导体芯片、以及所述金属框架，
设置将所述散热器的外周部和所述模塑树脂的外周部贯穿的孔，
使螺钉穿入所述孔中，从而将所述半导体模块安装于冷却套，
还具有板材，该板材设置于所述散热器的所述孔的周边，由与所述散热器相比耐力较高的材质制成。
2.根据权利要求1所述的半导体模块，其特征在于，
所述散热器和所述板材在界面处进行了合金化。
3.一种半导体模块，其特征在于，具有：
散热器，其具有固定面、和作为与所述固定面相反的面的散热面；
散热片，其设置于所述散热面的中央部；
绝缘材料，其设置于所述散热器的所述固定面上；
导电材料，其设置于所述绝缘材料上；
半导体芯片，其设置于所述导电材料上；
金属框架，其与所述半导体芯片连接；以及
模塑树脂，其以使所述散热片露出至外部的方式覆盖所述散热器、所述绝缘材料、所述导电材料、所述半导体芯片、以及所述金属框架，
设置将所述散热器的外周部和所述模塑树脂的外周部贯穿的孔，
使螺钉穿入所述孔中，从而将所述半导体模块安装于冷却套，
所述散热器具有引导部，该引导部设置于所述固定面的外周部，
所述引导部将所述绝缘材料的端部包入而固定。
CN201380076454.0A 2013-05-09 2013-05-09 半导体模块及半导体装置 Active CN105190874B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/063053 WO2014181426A1 (ja) 2013-05-09 2013-05-09 半導体モジュール及び半導体装置

Publications (2)

Publication Number Publication Date
CN105190874A CN105190874A (zh) 2015-12-23
CN105190874B true CN105190874B (zh) 2018-05-18

Family

ID=51866929

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380076454.0A Active CN105190874B (zh) 2013-05-09 2013-05-09 半导体模块及半导体装置

Country Status (5)

Country Link
US (1) US9362219B2 (zh)
JP (1) JP6065973B2 (zh)
CN (1) CN105190874B (zh)
DE (1) DE112013007047B4 (zh)
WO (1) WO2014181426A1 (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106537589B (zh) * 2014-07-09 2019-09-24 三菱电机株式会社 半导体装置
JP6424600B2 (ja) * 2014-12-09 2018-11-21 トヨタ自動車株式会社 半導体装置
WO2016103436A1 (ja) * 2014-12-26 2016-06-30 三菱電機株式会社 半導体モジュール
JP2018014414A (ja) * 2016-07-21 2018-01-25 トヨタ自動車株式会社 半導体装置
US10222402B2 (en) 2017-05-18 2019-03-05 Cypress Semiconductor Corporation Current sensing in a USB power control analog subsystem
JP6798615B2 (ja) * 2017-05-24 2020-12-09 三菱電機株式会社 半導体パッケージ
JP6953859B2 (ja) * 2017-07-25 2021-10-27 株式会社デンソー 半導体装置
DE112018006382T5 (de) 2017-12-13 2020-08-27 Mitsubishi Electric Corporation Halbleitereinheit und Verfahren zur Herstellung einer Halbleitereinheit
JP7298177B2 (ja) * 2019-02-15 2023-06-27 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
US20220068762A1 (en) * 2019-03-15 2022-03-03 Mitsubishi Electric Corporation Semiconductor device and semiconductor device with cooling member
JP7118262B2 (ja) * 2019-05-30 2022-08-15 三菱電機株式会社 半導体装置
US11145571B2 (en) * 2019-06-04 2021-10-12 Semiconductor Components Industries, Llc Heat transfer for power modules
DE102019209069A1 (de) * 2019-06-24 2020-12-24 Siemens Aktiengesellschaft Befestigung von Leistungshalbleiterbauelementen auf gekrümmten Oberflächen
DE102019119118A1 (de) * 2019-07-15 2021-01-21 Infineon Technologies Ag Halbleitergehäuse, halbleiteranordnung und verfahren zur herstellung eines halbleitergehäuses
JP7292155B2 (ja) * 2019-08-28 2023-06-16 三菱電機株式会社 半導体装置
DE102019215793A1 (de) * 2019-10-14 2021-04-15 Vitesco Technologies GmbH Verdrahtungssubstrat für ein Halbleiterbauteil und Verfahren zur Herstellung eines Verdrahtungssubstrats
JP6877600B1 (ja) * 2020-01-16 2021-05-26 三菱電機株式会社 半導体装置
WO2021153992A1 (ko) * 2020-01-31 2021-08-05 한온시스템 주식회사 전동 압축기, 인버터 제조장치 및 인버터 제조방법
US11908766B2 (en) * 2021-04-05 2024-02-20 Jmj Korea Co., Ltd. Cooling system where semiconductor component comprising semiconductor chip and cooling apparatus are joined

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1309815A (zh) * 1998-05-28 2001-08-22 艾利森公司 将集成电路封装固定到热沉上的导热安装布局
CN1542954A (zh) * 2003-03-26 2004-11-03 株式会社电装 半导体装置
CN102446875A (zh) * 2010-10-13 2012-05-09 三菱电机株式会社 半导体装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6288347A (ja) 1985-10-15 1987-04-22 Shindengen Electric Mfg Co Ltd 樹脂封止型半導体装置
JPH0786471A (ja) * 1993-09-20 1995-03-31 Hitachi Ltd 半導体モジュ−ル
JPH0982883A (ja) * 1995-09-08 1997-03-28 Fujitsu Ltd 半導体装置
JPH11354659A (ja) 1998-06-11 1999-12-24 Sansha Electric Mfg Co Ltd 電力用半導体モジュール
US6212074B1 (en) * 2000-01-31 2001-04-03 Sun Microsystems, Inc. Apparatus for dissipating heat from a circuit board having a multilevel surface
JP2002158322A (ja) 2000-11-20 2002-05-31 Mitsubishi Electric Corp 半導体モジュール
JP2002315357A (ja) 2001-04-16 2002-10-25 Hitachi Ltd インバータ装置
JP3646665B2 (ja) 2001-04-17 2005-05-11 株式会社日立製作所 インバータ装置
JP2003168769A (ja) 2001-11-30 2003-06-13 Mitsubishi Electric Corp 電力用半導体装置
JP3922166B2 (ja) * 2002-11-20 2007-05-30 三菱マテリアル株式会社 パワーモジュール用基板の製造方法並びにパワーモジュール用基板及びパワーモジュール
KR100677617B1 (ko) * 2005-09-29 2007-02-02 삼성전자주식회사 히트싱크 어셈블리
JP4569473B2 (ja) 2006-01-04 2010-10-27 株式会社日立製作所 樹脂封止型パワー半導体モジュール
JP2007235004A (ja) * 2006-03-03 2007-09-13 Mitsubishi Electric Corp 半導体装置
US7849914B2 (en) * 2006-05-02 2010-12-14 Clockspeed, Inc. Cooling apparatus for microelectronic devices
JP4336718B2 (ja) 2007-02-08 2009-09-30 三菱電機株式会社 半導体装置
US7564129B2 (en) 2007-03-30 2009-07-21 Nichicon Corporation Power semiconductor module, and power semiconductor device having the module mounted therein
JP4994123B2 (ja) * 2007-06-18 2012-08-08 ニチコン株式会社 パワー半導体モジュール
JP2008300379A (ja) 2007-05-29 2008-12-11 Sumitomo Electric Ind Ltd パワーモジュール
JP2009118176A (ja) 2007-11-06 2009-05-28 Olympus Imaging Corp カメラ，画面作成方法，画面作成プログラム
JP5642336B2 (ja) 2008-02-06 2014-12-17 富士電機株式会社 半導体装置およびその製造方法
JP5257817B2 (ja) 2010-06-15 2013-08-07 三菱電機株式会社 半導体装置
JP5373713B2 (ja) * 2010-07-23 2013-12-18 三菱電機株式会社 半導体装置
JP2012079950A (ja) 2010-10-04 2012-04-19 Toyota Motor Corp 半導体冷却装置
JP5251991B2 (ja) 2011-01-14 2013-07-31 トヨタ自動車株式会社 半導体モジュール
JP5602095B2 (ja) 2011-06-09 2014-10-08 三菱電機株式会社 半導体装置
JP2013030649A (ja) * 2011-07-29 2013-02-07 Mitsubishi Electric Corp 半導体モジュール及びその製造方法
JP2015073012A (ja) * 2013-10-03 2015-04-16 富士電機株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1309815A (zh) * 1998-05-28 2001-08-22 艾利森公司 将集成电路封装固定到热沉上的导热安装布局
CN1542954A (zh) * 2003-03-26 2004-11-03 株式会社电装 半导体装置
CN102446875A (zh) * 2010-10-13 2012-05-09 三菱电机株式会社 半导体装置

Also Published As

Publication number Publication date
US20160079155A1 (en) 2016-03-17
JPWO2014181426A1 (ja) 2017-02-23
US9362219B2 (en) 2016-06-07
DE112013007047B4 (de) 2023-02-23
DE112013007047T5 (de) 2016-01-21
WO2014181426A1 (ja) 2014-11-13
CN105190874A (zh) 2015-12-23
JP6065973B2 (ja) 2017-01-25

Similar Documents

Publication Publication Date Title
CN105190874B (zh) 半导体模块及半导体装置
JP4569473B2 (ja) 樹脂封止型パワー半導体モジュール
US11810887B2 (en) Double-sided cooling type power module and manufacturing method therefor
JP4634497B2 (ja) 電力用半導体モジュール
US8058722B2 (en) Power semiconductor module and method of manufacturing the same
JP5213884B2 (ja) 半導体装置モジュール
CN104637832B (zh) 半导体装置及其制造方法
JP2009536458A (ja) 半導体モジュール及びその製造方法
US20090237890A1 (en) Semiconductor device and method for manufacturing the same
WO2013171946A1 (ja) 半導体装置の製造方法および半導体装置
CN109659284A (zh) 半导体装置
JP5954409B2 (ja) 放熱フィン付き半導体モジュール
US9257376B2 (en) Semiconductor package and method of manufacturing the same
US20150262917A1 (en) Semiconductor device and method of manufacturing the same
CN111276447B (zh) 双侧冷却功率模块及其制造方法
JP2015126168A (ja) パワーモジュール
CN109698179B (zh) 半导体装置及半导体装置的制造方法
KR101994727B1 (ko) 전력 모듈 패키지 및 그 제조방법
JP2012138475A (ja) 半導体モジュールおよび半導体モジュールの製造方法
EP2178117A1 (en) Power semiconductor module with double side cooling
JP2016162992A (ja) パワー半導体装置
CN216145615U (zh) 半导体电路
JP2020072094A (ja) パワーユニット、パワーユニットの製造方法及びパワーユニットを有する電気装置
CN219085965U (zh) 表面贴装金属散热块的半导体电路组件和散热组件
US20230096381A1 (en) Semiconductor device and method for manufacturing semiconductor device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant