JPWO2014181426A1 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JPWO2014181426A1 JPWO2014181426A1 JP2015515695A JP2015515695A JPWO2014181426A1 JP WO2014181426 A1 JPWO2014181426 A1 JP WO2014181426A1 JP 2015515695 A JP2015515695 A JP 2015515695A JP 2015515695 A JP2015515695 A JP 2015515695A JP WO2014181426 A1 JPWO2014181426 A1 JP WO2014181426A1
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- Prior art keywords
- radiator
- semiconductor module
- module according
- conductive material
- semiconductor
- Prior art date
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
図1は、本発明の実施の形態1に係る半導体モジュールを示す断面図である。半導体モジュール1は放熱器2を有する。放熱器2は、大きさは約80mm×80mm程度、厚みは3mm程度であり、AlやCuからなる。放熱器2は、固定面2a(上面)と、固定面2aと反対の面である放熱面2b(下面)とを有する。フィン3が放熱面2bの中央部に設けられている。
図10及び図11は、本発明の実施の形態2に係る半導体モジュールを示す断面図及び上面図である。半導体モジュール1を冷却ジャケット15に取り付けて使用した場合に発生する応力は穴11付近で高くなる。そこで、本実施の形態ではモールド樹脂10の外周部に上側に突出した突出部10aを設けて、穴11付近におけるモールド樹脂10の上面の高さをモジュール中央部におけるモールド樹脂10の上面の高さより高くする。機械的な応力の集中しやすい穴11付近のモールド樹脂10を厚くすることでモジュールの強度を向上することができる。また、モールド樹脂10の一部を厚くするので、モールド樹脂10の全体を厚くするよりもモールド樹脂10の量を削減することができる。
図12及び図13は、本発明の実施の形態3に係る半導体モジュールを示す上面図及び内部図である。放熱器2は外側に突出した突出部19を有する。穴11は突出部19に設けられている。その放熱器2と同形状でモールド樹脂10を形成する。これにより、放熱器2とモールド樹脂10の材料使用量を削減することができる。また、突出部19間に金属フレーム9d,9eを配置することで、半導体モジュールの床面積を低減することもできる。
図16は、本発明の実施の形態4に係る半導体モジュールを示す断面図である。放熱器2の固定面2aに、裏面をメタライズした絶縁材4が接合材20を介して接合されている。接合材20は例えば導電性接合材である半田である。半田などの熱伝導性のよい材料を接合材20に用いることで、半導体モジュール1の放熱性は実施の形態1の半導体モジュールに若干劣るものの、グリスを用いた従来技術より格段に高い放熱性を安定して得ることができる。
図17及び図18は、本発明の実施の形態5に係る半導体モジュールを示す断面図及び上面図である。放熱器2より耐力の高い材質(Feなど)からなるカラー21がモールド樹脂10の穴11に挿入されている。ネジ14の締め付けによる反力を耐力の高いカラー21で受けるため、穴11周辺の放熱器2とモールド樹脂10の変形を抑制することができる。
図19及び図20は、本発明の実施の形態6に係る半導体モジュールを示す断面図及び上面図である。放熱器2より耐力の高い材質(Feなど)からなる板材22が放熱器2の穴11の周辺に設けられている。これにより、ネジ14の締付に対する穴11周辺の放熱器2の変形を抑制することができる。従って、モジュール全体の反りが抑制され、冷却ジャケット15との封止性を確保することができる。
図21は、本発明の実施の形態7に係る半導体モジュールを示す断面図である。放熱器2の放熱面2bに段差23が設けられ、中央部が突出している。これにより、冷媒がフィン3の根元に当たりやすくなり放熱性能が向上する。さらに、放熱器2の厚みが段差23の高さ分だけ増加するため、モジュールの強度も向上する。
図22及び図23は、本発明の実施の形態8に係る半導体モジュールを示す断面図及び内部図である。放熱器2の固定面2aの外周部にガイド24が設けられている。このガイド24が絶縁材4の端部を固定する。これにより、絶縁材4に骨材としての機能を持たせることができるため、放熱器2の強度を向上させることができる。
図25は、本発明の実施の形態9に係る半導体モジュールを示す内部図である。導電材5の平面形状は櫛の歯状である。これにより、絶縁材4の上面のうち導電材5が無い非パターン部が蛇行するため、非パターン部が直線のモジュールと比較して曲げに対する強度が高くなる。
図26及び図27は、本発明の実施の形態10に係る半導体装置を示す断面図及び上面図である。半導体モジュール1を外付けの板材25で押さえつけて冷却ジャケット15に固定する。板材25は半導体モジュール1と接触しており、ネジ14により冷却ジャケット15へ取り付けられている。板材25の材質は、耐力が高く透磁率の低いもの(例えばCu)がよい。
Claims (20)
- 固定面と、前記固定面と反対の面である放熱面とを有する放熱器と、
前記放熱面の中央部に設けられたフィンと、
前記放熱器の前記固定面上に設けられた絶縁材と、
前記絶縁材上に設けられた導電材と、
前記導電材上に設けられた半導体チップと、
前記半導体チップに接続された金属フレームと、
前記フィンを外部に露出させるように、前記放熱器、前記絶縁材、前記導電材、前記半導体チップ、及び前記金属フレームを覆うモールド樹脂とを備え、
前記放熱器の外周部と前記モールド樹脂の外周部を貫通する穴が設けられ、
前記穴にネジを通して冷却ジャケットに取り付けられることを特徴とする半導体モジュール。 - 前記穴付近における前記モールド樹脂の上面の高さをモジュール中央部における前記モールド樹脂の上面の高さより高くすることを特徴とする請求項1に記載の半導体モジュール。
- 前記放熱器は外側に突出した突出部を有し、
前記穴は前記突出部に設けられていることを特徴とする請求項1又は2に記載の半導体モジュール。 - 前記モールド樹脂の平面形状は四角であることを特徴とする請求項3に記載の半導体モジュール。
- 前記モールド樹脂の前記穴に挿入され、前記放熱器より耐力の高い材質からなるカラーを更に備えることを特徴とする請求項1に記載の半導体モジュール。
- 前記カラーの外側面に凹凸が設けられていることを特徴とする請求項5に記載の半導体モジュール。
- 前記放熱器の前記穴の周辺に設けられ、前記放熱器より耐力の高い材質からなる板材を更に備えることを特徴とする請求項1に記載の半導体モジュール。
- 前記放熱器と前記板材が界面で合金化されていることを特徴とする請求項7に記載の半導体モジュール。
- 前記放熱面に段差が設けられていることを特徴とする請求項1に記載の半導体モジュール。
- 前記放熱器は、前記固定面の外周部に設けられたガイドを有し、
前記ガイドが前記絶縁材の端部を固定することを特徴とする請求項1に記載の半導体モジュール。 - 前記導電材の平面形状は櫛の歯状であることを特徴とする請求項1〜10の何れか1項に記載の半導体モジュール。
- 前記絶縁材は絶縁基板であることを特徴とする請求項1〜11の何れか1項に記載の半導体モジュール。
- 前記絶縁基板はセラミック材料からなることを特徴とする請求項12に記載の半導体モジュール。
- 前記絶縁材はシート状の樹脂であることを特徴とする請求項1〜11の何れか1項に記載の半導体モジュール。
- 前記導電材の表面のうち前記半導体チップを実装する領域にめっき処理が施され、
前記導電材と前記半導体チップが導電性接合材により接合されていることを特徴とする請求項1〜14の何れか1項に記載の半導体モジュール。 - 前記放熱器と前記導電材の材料が同じであることを特徴とする請求項1〜15の何れか1項に記載の半導体モジュール。
- 前記放熱器と前記導電材の材料がAl又はAl合金であることを特徴とする請求項16に記載の半導体モジュール。
- 前記導電材の厚みは前記放熱器の厚みの1.15倍以上、1.45倍以下であることを特徴とする請求項1〜17の何れか1項に記載の半導体モジュール。
- 前記半導体チップは、インバータを構成する複数のスイッチング素子を有することを特徴とする請求項1〜18の何れか1項に記載の半導体モジュール。
- 半導体モジュールと、
前記半導体モジュールを押さえつけて冷却ジャケットに固定する板材とを備え、
前記半導体モジュールは、
固定面と、前記固定面と反対の面である放熱面とを有する放熱器と、
前記放熱面の中央部に設けられたフィンと、
前記放熱器の前記固定面上に設けられた絶縁材と、
前記絶縁材上に設けられた導電材と
前記導電材上に設けられた半導体チップと、
前記半導体チップに接続された金属フレームと、
前記フィンを外部に露出させるように、前記放熱器、前記絶縁材、前記導電材、前記半導体チップ、及び前記金属フレームを覆うモールド樹脂とを有することを特徴とする半導体装置。
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