CN104637832B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN104637832B
CN104637832B CN201410645110.3A CN201410645110A CN104637832B CN 104637832 B CN104637832 B CN 104637832B CN 201410645110 A CN201410645110 A CN 201410645110A CN 104637832 B CN104637832 B CN 104637832B
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grafting material
semiconductor element
substrate
semiconductor device
manufacturing
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CN104637832A (zh
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日野泰成
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于提供一种半导体装置及其制造方法，该半导体装置利用烧结性接合材料，使半导体元件和基板之间的接合部的高温耐久性、品质以及可靠性提高。本发明的半导体装置制造方法的特征在于，具备以下工序：(a)准备绝缘性或导电性基板；(b)在基板(即，绝缘基板)主面的接合区域(3a)配置烧结性接合材料；(c)一边使半导体元件的用于接合的面即接合面与接合材料加压接触，一边对接合材料进行烧结，从而经由接合材料将基板(即，绝缘基板)和半导体元件接合，工序(b)中的接合区域在俯视观察时位于半导体元件的接合面(即，区域(3b))内侧，并且，在工序(c)后，接合材料在俯视观察时也没有向半导体元件的接合面外侧溢出。

Description

半导体装置及其制造方法
技术领域
本发明涉及一种半导体装置及其制造方法，特别是涉及一种半导体元件的接合方法。
背景技术
近些年，随着环境限制的增多，考虑到环境问题的电子仪器(即，实现了高品质、高效率、节能的电子仪器)的需求高涨。特别地，诸如工业设备、具备电动机的家电的驱动控制仪器、面向电动汽车以及混合动力汽车的车载控制仪器、铁道车辆控制仪器、太阳能发电的控制仪器等，要求与高功率相对应的电子仪器。并且，要求电子仪器在高负载环境下(高温度环境下)的动作的高效率化、低损耗化。所谓高温环境下，是指大于或等于150～175℃(例如200℃)的温度环境下。在高温环境下动作的半导体元件的开发不断进展。另外，作为封装特性，高密度电流化也正在发展。
特别地，对于作为车载、铁道车辆控制仪器而使用的电子仪器，要求在高温度环境下的节能性能。至今为止，通常工作温度例如为小于或等于150℃，但今后，可以认为对于在大于或等于200℃的高温环境下使用的需求会增高。在大于或等于200℃的高温环境下，作为半导体元件，替代Si，SiC或GaN可以充分地应对。
因此，在高温环境下的工作中，为了抑制开关损失并实现低损耗化以及高效率化，需要重新研究电子仪器的材料、构造。特别地，电子仪器所应用的半导体装置内部的接合部最容易劣化，因此，接合部的高品质、高可靠性、高寿命化的实现是较大的课题。
因此，为了提高接合部的高温耐久性，取代焊料而使用烧结性的接合材料(例如，参照专利文献1)。在利用烧结性的接合材料使半导体元件与基板接合的情况下，通过在半导体元件背面和基板表面之间对接合材料一边加压一边加热，从而对接合材料进行烧结并接合。
专利文献1：日本特开2004-107728号公报
如上所述，在利用烧结性的接合材料进行接合时，在进行加热的基础上，例如在半导体元件背面和基板表面之间，对接合材料进行加压。由此，有时由于加压而使接合材料在溢出至半导体元件周围的状态下被烧结。溢出的接合材料在未被充分加压的情况下被烧结。在溢出状态下被烧结的接合材料，由于未如焊料那样形成倒角(fillet)形状而容易脱落。因此，在将半导体元件接合的工序之后的制造工序中，存在下述问题，即，溢出的接合材料因振动等脱落而成为短路等问题的原因。
发明内容
本发明就是为了解决如上所述的课题而提出的，其目的在于提供一种半导体装置及其制造方法，其利用烧结性的接合材料而将半导体元件和基板接合，使该接合部的高温耐久性、品质以及可靠性提高。
本发明所涉及的半导体装置的制造方法的特征在于，具备以下工序：(a)准备绝缘性或者导电性的基板；(b)在基板的主面的接合区域中配置烧结性的接合材料；以及(c)通过一边使半导体元件的用于接合的面即接合面与接合材料加压接触，一边对接合材料进行烧结，从而经由接合材料将基板和半导体元件接合，工序(b)中的接合区域，在俯视观察时处于半导体元件的接合面内侧，在工序(c)之后，接合材料在俯视观察时也没有向半导体元件的接合面外侧溢出。
另外，本发明所涉及的半导体装置的特征在于，具备：绝缘性或者导电性的基板；半导体元件，其与基板的表面接合；以及烧结性的接合材料，其将半导体元件的用于接合的面即接合面与基板接合，接合材料是一边使半导体元件的接合面与接合材料加压接触一边进行烧结而得到的，接合材料在俯视观察时没有向半导体元件的接合面外侧溢出。
发明的效果
根据本发明所涉及的半导体装置的制造方法，在将接合材料配置到基板上的工序中，通过将接合材料配置为在俯视观察时位于半导体元件的接合面内侧，从而能够对接合材料一边施加足够的压力一边进行加热。另外，在接合后，接合材料也没有向半导体元件的周围溢出，因此，在接合工序之后的工序或者半导体装置完成之后，不存在溢出的接合材料脱落的问题。因此，能够得到高品质、高可靠性的半导体装置。
另外，根据本发明所涉及的半导体装置，由于烧结后的接合材料没有向半导体元件的周围溢出，因此不会因溢出的接合材料脱落而引起配线短路等。因此，能够提高半导体装置的品质以及可靠性。
附图说明
图1是包含实施方式1所涉及的半导体装置而成的半导体模块的剖面图。
图2是用于说明实施方式1所涉及的半导体模块的制造方法的绝缘基板俯视图。
图3是包含实施方式2所涉及的半导体装置而成的半导体模块的剖面图。
图4是用于说明实施方式2所涉及的半导体模块的制造方法的绝缘基板俯视图。
标号的说明
1半导体元件，2接合材料，3绝缘基板，3a、5a接合区域，3b、5b区域，4散热板，5导电性基板，6绝缘金属层，7导线，8壳体，9电极，10封装材料，11控制基板，12粘接剂，13焊料。
具体实施方式
＜实施方式1＞
＜结构＞
图1示出应用于在高温环境下使用的电子仪器中的半导体模块的剖面图，该半导体模块包含本实施方式的半导体装置。本实施方式的半导体装置具备：作为绝缘性基板的绝缘基板3；半导体元件1，其与绝缘基板3接合；以及烧结性的接合材料2，其将绝缘基板3和半导体元件1接合。
绝缘基板3经由焊料13或者烧结性的接合材料而被接合在散热板4上。绝缘基板3在表面具备电路图案。绝缘基板3表面的电路图案和半导体元件1的背面电极利用烧结性的接合材料2而接合。
散热板4利用例如粘接剂12而固定至成为半导体模块的外轮廓的壳体8。壳体8将绝缘基板3、半导体元件1、导线7以及后述的控制基板11的周围包围。由树脂构成的壳体8与电极9一体成型。半导体元件1的顶面电极和电极9通过导线7而连接。另外，用于搭载驱动电路及保护电路的控制基板11经由电极9而与半导体元件1连接。
并且，通过在壳体8内部注入封装材料10，从而将绝缘基板3、半导体元件1、导线7、控制基板11封装。
以下，详述各结构要素。此外，以下所述的各结构要素的尺寸是一个例子，并不限定于所记载的尺寸。散热板4例如是一条边的长度为50～300mm、厚度为3～5mm、由Cu或Al或Al-SiC复合体构成的热容量较大的散热板。散热板4经由厚度为大约20～150μm的烧结性的接合材料、或者厚度为大约100～200μm的焊料13而与绝缘基板3接合。
绝缘基板3由具有0.2～3mm的固定厚度的Al2O3、AlN、Si3N4、或者ZrAl2O3等形成。在绝缘基板3背面和散热板4被焊料13接合的情况下，在绝缘基板3背面形成厚度为2～10μm的Ni镀层。另外，在绝缘基板3的与散热板4相反侧的面(即，图1的上侧的面)形成有电路图案。在电路图案形成面形成了抗蚀剂。半导体元件1经由烧结性的接合材料2而与形成在绝缘基板3顶面的电路图案接合。
半导体元件1例如是功率用半导体元件，是IGBT、MOSFET、二极管等处理大功率的半导体元件。半导体元件1例如为了与AC输出对应而形成了3相电路。此外，半导体元件1不限于Si制的IGBT、MOSFET、二极管，也可以是SiC或者GaN制。例如，在半导体元件1为IGBT的情况下，设置在半导体元件1的底面的背面电极是集电极电极，设置在半导体元件1的表面的顶面电极是发射极电极和栅极电极。
在半导体元件1形成3相电路的情况下，半导体元件1(例如，二极管、IGBT、MOSFET)，对应于各相，与绝缘基板3上的电路图案通过铝制的导线7等而进行导线接合，在电子仪器内进行配线连接。
壳体8由PPS、PBT、或者环氧树脂等树脂构成。电极9是与外部进行输入/输出的AC输出端子或者输入/输出端子，由厚度为1mm左右的铜或铜合金构成。电极9与壳体8一体成型。
面向图1时位于右侧的电极9与半导体元件1(例如，IGBT)的顶面电极(例如，栅极电极)通过导线7而连接，该电极9与搭载有驱动电路及保护电路的控制基板11连接，输入用于进行通断动作的控制信号。如图1所示，控制基板11配置为，由电极9支撑而在绝缘基板3的上方处于与绝缘基板3大致平行的状态。
半导体元件1(例如，IGBT)的顶面电极(发射极电极)通过导线7而与相邻的半导体元件1(例如，二极管)的电极连接。面向图1时位于左侧的电极9与壳体8外部的电动机等电机、电池或线束进行配线连接。
封装材料10是将Si作为基体的绝缘性的凝胶材料。此外，在壳体8上经由粘接剂而盖有盖子(未图示)。
此外，在各半导体元件1和绝缘基板3之间的接合部分处，接合材料2在俯视观察时不向半导体元件1的用于接合的面即接合面外侧溢出。此外，在本实施方式中，所谓半导体元件1的用于接合的面即接合面，是指半导体元件1的底面。具体而言，例如半导体元件1的底面的一条边为4mm～18mm，接合材料2相对于半导体元件1的底面各边而位于内侧30～200μm处。此外，优选接合材料2的端部位于距离半导体元件1的底面的各边500μm以内的范围。
如上述所示，接合材料2在俯视观察时不向半导体元件1的接合面外侧溢出，意味着在对接合材料2进行烧结的工序中，接合材料2在半导体元件1和绝缘基板3之间被充分加压。
另一方面，如背景技术部分所述，在接合材料2在俯视观察时溢出至半导体元件1的接合面外侧的情况下，溢出的接合材料2在未被充分加压的状态下烧结。该溢出的部分有可能脱落。
在半导体元件1和绝缘基板3的接合部处，接合后的接合材料2的厚度为20μm～200μm左右。在焊料接合时，为了确保接合部的可靠性，需要使焊料的厚度大于或等于1000μm。另一方面，在使用烧结性的接合材料2的情况下，即使厚度小于或等于1000μm，也不影响可靠性。
＜制造方法＞
首先，说明本实施方式的烧结性的接合材料2。膏状的接合材料2由微小金属颗粒、溶剂以及表面稳定剂构成。微小金属颗粒由直径大于或等于1nm而小于或等于10μm的Ag、Cu、Au、Pd、Pt等构成。微小金属颗粒的表面被有机保护膜覆盖。通过将接合材料2设为纳米或者微米尺寸的微小金属颗粒，从而使熔点降低，能够以比接合材料固有的熔融温度低的温度进行烧结接合。在接合后，与块体材料等同地进行高熔点化，得到高耐热性和可靠性。
在接合材料2的微小金属颗粒使用Ag的情况下，一边进行大约180℃至350℃的加热，一边在半导体元件1和导电性基板5之间对接合材料2进行加压。在接合后，接合材料2能够确保大约900℃左右的耐热性。
在膏状的接合材料2中，金属颗粒(例如Ag)被保护膜覆盖，因此彼此不接合，在溶剂中是稳定的。通过加热接合材料2，从而使溶剂(例如，有机物)挥发，金属颗粒发生接合。如果金属颗粒的尺寸为纳米级，则表面能增大，因此，产生以比块体熔点低的温度聚集并接合的烧结现象。因此，在接合时，无需将半导体元件1以及绝缘基板3加热至块体熔点，能够避免由此引起的热应力、变形、翘曲等。
说明本实施方式的半导体装置的制造方法。首先，准备绝缘基板3。在绝缘基板3顶面形成有电路图案。图2是绝缘基板3的俯视图。然后，在绝缘基板3顶面的电路图案的接合区域3a中，通过印刷而配置膏状的烧结性的接合材料2。即，接合区域3a是配置接合材料2的区域。对于印刷，例如可以通过丝网印刷来进行。此外，在绝缘基板3上配置接合材料2时，也可以对多个接合区域3a同时印刷接合材料2。另外，通过在印刷装置中配置多个绝缘基板3而进行印刷，从而能够对多个绝缘基板3同时进行印刷。
然后，将半导体元件1安装在接合材料2上。在图2中，区域3b是对半导体元件1的接合面进行投影后的区域。在本实施方式中，由于半导体元件1的接合面是指半导体元件1的底面，因此以与区域3b重叠的方式安装半导体元件1的底面。在这里，配置有接合材料2的接合区域3a位于区域3b内侧。即，在如前所述的配置接合材料2的工序中，接合材料2配置在区域3b内侧。具体而言，例如用于配置接合材料2的接合区域3a的各边与区域3b的各边相比，位于内侧30～200μm处。
并且，一边使安装后的半导体元件1的接合面与接合材料2加压接触，一边进行接合材料2的烧结。加压以及加热的处理是通过加热加压装置进行的。加热温度处于180℃～350℃的范围，加压力处于5MPa～30MPa的范围，通过保持该状态30～180秒而进行接合。通过该加压以及加热处理，从而使绝缘基板3和半导体元件1经由接合材料2接合。此外，也可以在利用加热加压装置进行加热及加压处理的工序中，集中处理多个绝缘基板3。
此外，半导体元件1是以SiC、GaN等半导体为材料的MOSFET、IGBT、二极管等。半导体元件1的底面的各边例如处于4～18mm的范围。
然后，进行绝缘基板3底面和散热板4的接合。接合是通过焊料接合而进行的。此外，在利用烧结性的接合材料进行绝缘基板3底面和散热板4的接合的情况下，在对半导体元件1和绝缘基板3进行接合时，也可以经由烧结性的接合材料预先将绝缘基板3安装在散热板4上，利用加热加压装置同时进行接合。
然后，利用粘接剂12将壳体8固定在散热板4上。并且，利用导线7将半导体元件1的顶面电极之间或者半导体元件1的顶面电极和电极9之间连接。导线7的连接是通过导线接合而进行的。另外，将控制基板11与电极9连接。最后，将封装材料10注入壳体并进行绝缘基板3、半导体元件1、导线7以及控制基板11的封装。经过以上工序，制造包含本实施方式的半导体装置的电子仪器。
如上所述，在本实施方式的半导体装置的制造工序中，将接合材料2配置为在俯视观察时位于半导体元件1的接合面内侧，并进行接合材料2的加热以及加压。由此，能够对接合材料2一边施加足够的压力一边进行加热。另外，即使在接合后，接合材料2也没有向半导体元件1的周围溢出，因此，在接合工序之后的工序(例如，导线接合工序)或者半导体装置完成后，不存在溢出的接合材料2脱落的问题。因此，能够得到高品质、高可靠性的半导体装置。
此外，由于接合后的接合材料2的熔点与块体材料为等同水平，因此如果使用Ag作为接合材料2，则能够以180℃～350℃的范围内的接合温度进行接合。另外，接合后能够得到900℃左右的高温耐久性。因此，除了高品质、高可靠性之外，还能够得到提高了高温耐久性的半导体装置。
＜效果＞
本实施方式的半导体装置的制造方法的特征在于，具备以下工序：(a)准备绝缘性或者导电性的基板；(b)在基板(即，绝缘基板3)的主面的接合区域3a中配置烧结性的接合材料2；(c)通过一边使半导体元件1的用于接合的面即接合面与接合材料2加压接触，一边对接合材料2进行烧结，由此经由接合材料2将基板(即，绝缘基板3)和半导体元件1接合，工序(b)中的接合区域3a在俯视观察时位于半导体元件1的接合面(即，区域3b)内侧，并且，在工序(c)之后，接合材料2在俯视观察时也不向半导体元件1的接合面外侧溢出。
因此，在将接合材料2配置于绝缘基板3顶面的工序中，通过将接合材料2配置为在俯视观察时位于半导体元件1的接合面内侧，从而能够对接合材料2一边施加足够的压力一边进行加热。另外，即使在接合后，接合材料2也没有向半导体元件1的周围溢出，因此在接合工序之后的工序(例如，导线接合工序)或者半导体装置完成后，不存在溢出的接合材料2脱落的问题。因此，能够得到一种半导体装置，其除了具有因使用烧结性的接合材料2而得到的高温耐久性，还具有高品质、高可靠性。
另外，其特征在于，在本实施方式的半导体装置的制造方法中的工序(c)之后，接合材料2是以Ag、Cu、Pd、Au中的某一个作为主要成分的导电性金属。
因此，通过将接合材料2的材料设为以Ag、Cu、Pd、Au中的某一个为主要成分的导电性金属，从而与以Sn为主要成分的焊料相比，能够增大接合材料2的耐热温度。另外，作为接合材料2的材料通过以Cu为主要成分，从而能够抑制材料成本。
另外，其特征在于，在本实施方式的半导体装置的制造方法的工序(b)中，接合材料2由直径大于或等于1nm而小于或等于10μm的金属颗粒构成。
因此，作为接合材料2，采用直径大于或等于1nm而小于或等于10μm的微细的金属颗粒，由此能够以比接合材料固有的熔融温度低的温度进行烧结接合。另外，通过将接合材料2设为直径大于或等于1nm而小于或等于10μm的颗粒掺在一起的材料，从而能够抑制材料成本。
另外，其特征在于，在本实施方式的半导体装置的制造方法的工序(b)中，接合材料2为膏状。
因此，通过使接合材料2为膏状，从而能够利用印刷来配置接合材料2。通过利用印刷来配置接合材料2，从而能够在多个区域中集中配置接合材料2，因此生产性提高。
另外，其特征在于，在本实施方式的半导体装置的制造方法的工序(b)中，接合材料2通过印刷而配置。
因此，通过利用印刷(例如，丝网印刷)而配置接合材料2，从而能够在多个区域中集中配置接合材料2，因此生产性提高。
另外，其特征在于，在本实施方式的半导体装置的制造方法的工序(b)中，接合区域3a为多个，在工序(c)中，半导体元件1为多个，各半导体元件1在各个接合区域3a中接合。
因此，通过印刷将膏状的接合材料2集中配置到多个区域中，并且通过将多个半导体元件1安装在各个区域中并进行加热以及加压处理，并集中接合，从而提高生产性。
另外，其特征在于，在本实施方式的半导体装置的制造方法的工序(c)之后，烧结后的接合材料2的厚度小于或等于1000μm。
因此，通常，对于焊料，需要大于或等于1000μm的接合厚度，但通过利用本实施方式的接合材料2进行接合，能够使接合厚度小于或等于1000μm。通过使接合厚度变薄，从而能够使半导体装置整体的厚度变薄。另外，通过使接合厚度变薄，从而能够削减接合材料2的使用量，因此能够抑制材料成本。
另外，本实施方式的半导体装置的特征在于，具备：绝缘性或者导电性的基板；半导体元件1，其与基板(即，绝缘基板3)的表面接合；以及烧结性的接合材料2，其将半导体元件1的用于接合的面即接合面与基板接合，接合材料2是一边使半导体元件1的接合面与接合材料2加压接触一边进行烧结而得到的，接合材料2在俯视观察时，不溢出至半导体元件1的接合面外侧。
因此，由于烧结后的接合材料2不向半导体元件1的周围溢出，因此不会因溢出的接合材料2脱落而引起配线短路等。由此，能够提高半导体装置的品质以及可靠性。
＜实施方式2＞
＜结构＞
图3示出应用于在高温环境下使用的电子仪器中的半导体模块的剖面图，该半导体模块包含本实施方式的半导体装置。本实施方式的半导体装置具备：导电性基板5；半导体元件1，其与导电性基板5接合；烧结性的接合材料2，其将导电性基板5和半导体元件1接合。此外，导电性基板5为金属板。
导电性基板5的背面(即，与和半导体元件1接合的面相反侧的面)固定粘接在绝缘金属层6上，该绝缘金属层在底面上具有绝缘箔。
如图3所示，在导电性基板5的一端设置有电极9。另外，导电性基板5的另一端侧的电极9，通过导线7与半导体元件1的顶面电极连接。
导电性基板5、半导体元件1、接合材料2、绝缘金属层6、导线7利用以环氧树脂为主要成分的封装材料10而封装。此外，绝缘金属层6的底面以及电极9的一部分露出至封装材料10的外部。电极9与电动机等电机、电池或线束分别进行配线连接，而连接至外部。以下，详述各结构要素。
在本实施方式的半导体装置中，作为半导体元件1，例如IGBT和二极管成对而接合在导电性基板5上。作为半导体元件1的IGBT，作为背面电极而具备集电极，作为顶面电极而具备栅极电极以及发射极电极。IGBT通过电极9而完成来自外部的输入(开关on/off控制)以及外部控制。此外，半导体元件1并不限定于IGBT，也可以使用MOSFET、晶体管等。并且，并不限定于以Si为材料的结构，例如也可以是以SiC或者GaN为材料的MOSFET、二极管等。此外，针对半导体元件1的顶面电极以及背面电极，实施了Ti-Ni-Au或者Ag等的金属化。
半导体元件1的背面电极(例如，集电极电极)和导电性基板5通过接合材料2而连接。导电性基板5是诸如热传导率高达大约400W/(m·K)、且电阻率低至大约2μΩ·cm的铜或者铜合金的金属板。导电性基板5的厚度为3～5mm左右，具有作为散热板的功能。
导电性基板5的一端延伸至封装材料10的外部，形成为电极9。上述的MOSFET、IGBT等半导体元件1由于对大电流进行通断控制，因而发热量较大。因此，需要这种热传导率高的作为散热板而起作用的导电性基板5。
固定在导电性基板5背面的绝缘金属层6，具有绝缘层和保护金属层的层叠构造。绝缘层使用混入有氮化硼、氧化铝等填料的环氧树脂。在该绝缘层上固定有由热传导性高的铜、铝等构成的保护金属层。另外，虽然在图3中未图示，但与绝缘金属层6连接有散热板、具备多个散热片的散热器、水冷散热片等。
因半导体元件1的动作而产生的热在导电性基板5、绝缘金属层6中传递，并且经由与绝缘金属层6连接的例如散热板(未图示)而向外部散热。这样，抑制半导体元件1的温度上升。
此外，本实施方式的半导体装置具备绝缘金属层6，但也可以是不具备绝缘金属层6而使导电性基板5的背面露出的结构。另外，也可以是取代导电性基板5以及绝缘金属层6而具备实施方式1中所述的绝缘基板3(例如，氮化铝等的陶瓷基板)的结构。
作为IGBT的半导体元件1的顶面电极(栅极电极)，通过导线7与电极9连接，半导体元件1的另一顶面电极(发射极电极)，通过导线7与相邻地配置的作为二极管的半导体元件1的顶面电极连接。半导体元件1的背面电极(集电极电极)经由导电性基板5以及电极9与外部端子电连接。
电极9是将由铜或铜合金形成的厚度为0.5～2mm左右的平板，通过模具成型进行弯曲而形成的。通常，从半导体元件1的表面到外部电极的配线连接，利用铝等金属性的导线7进行导线接合并固相接合。本实施方式的半导体装置设想为对大电流进行通断控制，作为动作电流而流过大电流。因此，多个导线7并列地配置，作为导线7，采用直径大约300～500μm的粗金属导线。
另外，与实施方式1相同，在各半导体元件1和导电性基板5的接合部分，接合材料2在俯视观察时不向半导体元件1的用于接合的面即接合面外侧溢出。此外，在本实施方式中，所谓半导体元件1的用于接合的面即接合面，是指半导体元件1的底面。具体而言，例如，半导体元件1的底面的一条边为4mm～18mm。
＜制造方法＞
首先，准备尺寸为例如10mm×80mm×3mm的导电性基板5。图4是导电性基板5的俯视图。然后，在导电性基板5顶面的接合区域5a中，配置膏状的烧结性的接合材料2。接合材料2具有与实施方式1中所述的接合材料相同的性质。接合材料2填充至射流器，并从射流器射出而涂敷在接合区域5a。即，接合区域5a是用于配置接合材料2的区域。在图4中，区域5b是将半导体元件1的接合面(在本实施方式中为半导体元件1的底面)投影所得到的区域。接合材料2配置在区域5b的中央。
然后，以半导体元件1的底面与区域5b重叠的方式，在导电性基板5上安装半导体元件1。在这里，配置有接合材料2的接合区域5a位于区域5b内侧。即，在如前所述的配置接合材料2的工序中，接合材料2配置在区域5b内侧。
然后，一边使已安装的半导体元件1的接合面与接合材料2加压接触，一边进行接合材料2的烧结。加压及加热的处理是通过加热加压装置而进行的。加热温度处于180℃～350℃范围，加压力处于5MPa～30MPa的范围，通过保持该状态30～180秒而进行接合。通过该加压及加热的处理，绝缘基板3和半导体元件1经由接合材料2而接合。此外，也可以在利用加热加压装置进行加热及加压处理的工序中，集中处理多个导电性基板5。
在加压时，膏状的接合材料2在半导体元件1的底面和导电性基板5之间以涂敷部位(接合区域5a)为中心扩展。此外，接合材料2的涂敷量是在加压时不从半导体元件1的底面(即，区域5b)溢出的涂敷量。在接合材料2接合后、即加热及加压后的厚度为20～200μm左右。
如上所述，利用加热加压装置，能够同时使图3所示的2个半导体元件1接合。不限于2个，通过集中对多个半导体元件1进行加热加压，从而能够同时接合，生产性优异。
然后，例如通过楔形接合，利用由Al形成的导线7将半导体元件1的顶面电极和另一半导体元件1的顶面电极之间或者半导体元件1的顶面电极和电极9之间进行配线连接。
并且，最后，利用以环氧树脂为主要成分的封装材料10，例如通过传递模塑法对导电性基板5、半导体元件1、接合材料2以及导线7进行封装。此时，绝缘金属层6紧贴在导电性基板5的底面。
根据本实施方式的制造方法，能够以比块体材料所具有的熔点温度低的温度(180℃～350℃)进行接合，能够得到具有耐受至块体材料所具有的熔点为止的耐热性的高品质接合。因此，能够得到可在高温下动作的高可靠性的半导体装置。
＜效果＞
在本实施方式的半导体装置的制造方法中，其特征在于，在基板(即，导电性基板5)的主面的接合区域5a中配置烧结性的接合材料2的工序中，接合材料2通过从射流器射出而配置。
因此，在进行接合时，一边将半导体元件1向导电性基板5加压一边加热，因此如果在配置半导体元件1的区域的中央配置接合材料2，则通过加压而以大致同心圆状扩展。因此，即使利用射流器来配置接合材料2，也能够进行接合。
此外，本发明在其发明的范围内，能够自由地对各实施方式进行组合，或适当地对各实施方式进行变形、省略。

Claims (18)

1.一种半导体装置的制造方法，其特征在于，
具备以下工序：
(a)准备半导体元件、导电性的基板；
(b)在所述基板的主面的接合区域中配置烧结性的接合材料；以及
(c)将所述半导体元件的背面电极作为用于接合的面即接合面，通过一边使所述接合面与所述接合材料加压接触，一边对所述接合材料进行烧结，从而经由所述接合材料将所述基板和所述半导体元件接合，
所述工序(b)中的所述接合区域，在俯视观察时处于所述半导体元件的接合面内侧，
在所述工序(c)之后，所述接合材料在俯视观察时位于所述半导体元件的接合面的内侧，
所述基板的在俯视观察时与所述半导体元件重叠的区域是平坦的。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，
在所述工序(c)之后，所述接合材料是以Ag、Cu、Pd、Au中的某一种为主要成分的导电性金属。
3.根据权利要求1所述的半导体装置的制造方法，其特征在于，
在所述工序(b)中，所述接合材料由直径大于或等于1nm而小于或等于10μm的金属颗粒构成。
4.根据权利要求1所述的半导体装置的制造方法，其特征在于，
在所述工序(b)中，所述接合材料为膏状。
5.根据权利要求1所述的半导体装置的制造方法，其特征在于，
在所述工序(b)中，所述接合材料是通过印刷而配置的。
6.根据权利要求1所述的半导体装置的制造方法，其特征在于，
在所述工序(b)中，所述接合材料是通过从射流器射出而配置的。
7.根据权利要求4至6中任一项所述的半导体装置的制造方法，其特征在于，
在所述工序(b)中，所述接合区域为多个，
在所述工序(c)中，所述半导体元件为多个，各所述半导体元件在各所述接合区域中分别接合。
8.根据权利要求1至6中任一项所述的半导体装置的制造方法，其特征在于，
在所述工序(c)之后，烧结后的所述接合材料的厚度小于或等于1000μm。
9.一种半导体装置，其特征在于，
具备：
导电性的基板；
半导体元件，其具有用于接合的接合面即背面电极，所述接合面与所述基板的表面接合；以及
接合材料，其将所述半导体元件的用于接合的面即接合面与所述基板烧结接合，
所述基板的在俯视观察时与所述半导体元件的所述接合面重叠的区域是平坦的，
所述接合材料在俯视观察时位于所述半导体元件的所述接合面的内侧。
10.一种半导体装置的制造方法，其特征在于，
具备以下工序：
(a)准备半导体元件、绝缘性的基板；
(b)在所述基板的主面的接合区域中配置烧结性的接合材料；以及
(c)将所述半导体元件的背面电极作为用于接合的面即接合面，通过一边使所述接合面与所述接合材料加压接触，一边对所述接合材料进行烧结，从而经由所述接合材料将所述基板和所述半导体元件接合，
所述工序(b)中的所述接合区域，在俯视观察时处于所述半导体元件的接合面内侧，
在所述工序(c)之后，所述接合材料在俯视观察时位于所述半导体元件的接合面的内侧大于或等于30μm而小于或等于200μm处，
所述基板的在俯视观察时与所述半导体元件重叠的区域是平坦的。
11.根据权利要求10所述的半导体装置的制造方法，其特征在于，
在所述工序(c)之后，所述接合材料是以Ag、Cu、Pd、Au中的某一种为主要成分的导电性金属。
12.根据权利要求10所述的半导体装置的制造方法，其特征在于，
在所述工序(b)中，所述接合材料由直径大于或等于1nm而小于或等于10μm的金属颗粒构成。
13.根据权利要求10所述的半导体装置的制造方法，其特征在于，
在所述工序(b)中，所述接合材料为膏状。
14.根据权利要求10所述的半导体装置的制造方法，其特征在于，
在所述工序(b)中，所述接合材料是通过印刷而配置的。
15.根据权利要求10所述的半导体装置的制造方法，其特征在于，
在所述工序(b)中，所述接合材料是通过从射流器射出而配置的。
16.根据权利要求13至15中任一项所述的半导体装置的制造方法，其特征在于，
在所述工序(b)中，所述接合区域为多个，
在所述工序(c)中，所述半导体元件为多个，各所述半导体元件在各所述接合区域中分别接合。
17.根据权利要求10至15中任一项所述的半导体装置的制造方法，其特征在于，
在所述工序(c)之后，烧结后的所述接合材料的厚度小于或等于1000μm。
18.一种半导体装置，其特征在于，
具备：
绝缘性的基板；
半导体元件，其具有用于接合的接合面即背面电极，所述接合面与所述基板的表面接合；以及
接合材料，其将所述半导体元件的用于接合的面即接合面与所述基板烧结接合，
所述基板的在俯视观察时与所述半导体元件的所述接合面重叠的区域是平坦的，
所述接合材料在俯视观察时位于所述半导体元件的所述接合面的内侧大于或等于30μm而小于或等于200μm处。
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