CN102593081B - 包括散热器的半导体器件 - Google Patents

包括散热器的半导体器件 Download PDF

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CN102593081B
CN102593081B CN201210008411.6A CN201210008411A CN102593081B CN 102593081 B CN102593081 B CN 102593081B CN 201210008411 A CN201210008411 A CN 201210008411A CN 102593081 B CN102593081 B CN 102593081B
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radiator
layer
substrate
semiconductor chip
semiconductor device
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CN102593081A (zh
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R.巴耶雷尔
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明涉及包括散热器的半导体器件。半导体器件包括：包括背面金属的半导体芯片；衬底；以及直接接触背面金属的导电散热器。所述半导体芯片包括直接接触散热器且将散热器与衬底电耦合的烧结接头。

Description

包括散热器的半导体器件
技术领域
本发明涉及半导体器件的领域，具体地涉及包括散热器的半导体器件。
背景技术
功率电子模块是被用在功率电子电路中的半导体封装。功率电子模块通常被用在车辆和工业应用中，比如用在逆变器和整流器中。包括在功率电子模块中的半导体组件通常是绝缘栅双极型晶体管（IGBT）半导体芯片或者金属氧化物半导体场效应晶体管（MOSFET）半导体芯片。IGBT和MOSFET半导体芯片具有变化的电压和电流额定值（rating）。一些功率电子模块在半导体封装中也包括附加的半导体二极管（即续流二极管）以用于过电压保护。
一般来说，使用两种不同的功率电子模块设计。一种设计是用于较高功率应用，而另一种设计是用于较低功率应用。对于较高功率应用，功率电子模块通常包括集成在单个衬底上的几个半导体芯片。所述衬底通常包括绝缘陶瓷衬底，比如Al2O3、AlN、Si3N4或其他适当材料，以将功率电子模块绝缘。利用纯的或镀的Cu、Al或其他适当金属对所述陶瓷衬底的至少顶面进行金属化，以提供用于半导体芯片的电气和机械接触部。通常使用直接铜接合（DCB）工艺、直接铝接合工艺（DAB）工艺或活性金属钎焊（AMB）工艺将所述金属层接合到陶瓷衬底。
通常，利用Sn-Pb、Sn-Ag、Sn-Ag-Cu或另一适当焊料合金的软焊接被用于将半导体芯片联接到金属化陶瓷衬底。通常，将几个衬底组合到金属底板上。在这种情况下，陶瓷衬底的背面也利用纯的或镀的Cu、Al或其他适当材料进行金属化以将所述衬底联接到金属底板。为了将衬底联接到金属底板，通常使用利用Sn-Pb、Sn-Ag、Sn-Ag-Cu或另一适当焊料合金的软焊接。
对于较低功率应用，取代陶瓷衬底，通常使用引线框衬底（例如纯Cu衬底）。取决于应用，所述引线框衬底通常镀有Ni、Ag、Au和/或Pd。通常，利用Sn-Pb、Sn-Ag、Sn-Ag-Cu或另一适当焊料合金的软焊接被用于将半导体芯片联接到引线框衬底。
对于高温应用，焊接接头的低熔点（Tm=180℃-220℃）对于功率电子模块来说变成关键参数。在功率电子模块的操作期间，处于半导体芯片下方的区域暴露于高温。在这些区域中，环境空气温度与半导体芯片内部耗散的热量叠加。这导致功率电子模块的操作期间的热循环。通常，关于热循环可靠性，在150℃之上就不能保证焊接接头的可靠功能。在150℃之上，在几次热循环之后就可能在焊接区段内部形成裂缝。所述裂缝可以容易散布到整个焊接区段上并且导致功率电子模块的故障。
随着在苛刻环境（例如汽车应用）中使用功率电子装置的愿望不断增加以及半导体芯片的持续集成，外部和内部耗散的热量持续增加。因此，对于能够在高达及超出200℃的内部和外部温度下操作的高温功率电子模块的需求不断增长。此外，功率电子装置的电流密度持续增加，这导致功率损耗的密度的增加。因此，半导体芯片与衬底之间的必须借之耗散所述损耗的热界面变得越来越重要。
出于这些和其他原因，需要本发明。
发明内容
一个实施例提供了一种半导体器件。所述半导体器件包括：包括背面金属的半导体芯片；衬底；以及直接接触背面金属的导电散热器。所述半导体芯片包括直接接触散热器并且将散热器与衬底电耦合的烧结接头。
附图说明
包括附图以提供对实施例的进一步理解，并且所述附图被合并在本说明书中并且构成本说明书的一部分。附图示出了实施例并且与描述一起用来解释实施例的原理。其他实施例以及实施例的许多预期优点将容易明白，这是因为它们参照下面的详细描述而变得更好理解。附图的元件不一定相对于彼此按比例绘制。同样的附图标记指代对应的类似部件。
图1示出了半导体器件的一个实施例的剖面图。
图2示出了半导体器件的另一个实施例的剖面图。
图3示出了包括半导体芯片与衬底之间的电气和热界面的半导体器件的一部分的一个实施例的剖面图。
图4示出了包括半导体芯片与两个衬底之间的电气和热界面的半导体器件的一部分的一个实施例的剖面图。
图5A示出了散热器的一个实施例的剖面图。
图5B示出了散热器的另一个实施例的剖面图。
图5C示出了散热器的另一个实施例的剖面图。
具体实施方式
在下面的详细描述中参照形成本文一部分的附图，在所述附图中通过图示的方式示出了可以在其中实践本公开内容的具体实施例。在这方面，比如“顶部”、“底部”、“前”、“后”、“在前”、“在后”等的方向性术语是参照所描述的（一幅或多幅）附图的取向而使用的。由于实施例的组件可以被定位在若干不同取向上，因此方向性术语被用于图示目的而绝非进行限制。要理解的是，在不背离本公开内容的范围的情况下可以利用其他实施例并且可以做出结构或逻辑的改变。因此不要以限制性意义来看待下面的详细描述，并且本公开内容的范围由所附权利要求限定。
要理解的是，除非具体地另行声明，否则在这里所描述的各个示例性实施例的特征可以彼此组合。
在这里所使用的术语“电耦合”不意味着意指元件必须直接耦合在一起而是可以在“电耦合”的元件之间提供中间元件。
图1示出了半导体器件100的一个实施例的剖面图。在一个实施例中，半导体器件100是高温（即高达及超出200℃）低功率电子模块。功率电子模块100包括引线框衬底102、电气和热界面104、半导体芯片或管芯106、接合线108、引线112以及外罩110。引线框衬底102包括Cu、Al或另一适当材料。在一个实施例中，引线框衬底102镀有Ni、Ag、Au和/或Pd。在一个实施例中，电气和热界面104包括散热器和烧结接头，下面将参照图3-5C对其更加详细地描述。电气和热界面104将引线框衬底102联接到半导体芯片106。
所述烧结接头可能包括由于制造工艺所致的空隙或瑕疵。烧结接头的空隙或瑕疵的尺寸范围可能处于几微米与20μm之间。烧结接头的这些空隙或瑕疵降低烧结接头在从半导体芯片106耗散热量方面的有效性。为了降低烧结接头的空隙或瑕疵在从半导体芯片106耗散热量方面的影响，在半导体芯片106与烧结接头之间形成散热器。所述散热器提供半导体芯片106与烧结接头之间的缓冲，以在烧结接头的空隙或瑕疵周围从半导体芯片106耗散热量。通过散布在烧结接头的空隙或瑕疵周围从半导体芯片106耗散的热量，半导体芯片106与引线框衬底102之间的热界面与仅仅包括烧结接头而不包括散热器的热界面相比得到了显著改进。
半导体芯片106通过接合线108电耦合到引线112。接合线108包括Al、Cu、Al-Mg、Au或另一适当材料。在一个实施例中，使用超声线接合将接合线108接合到半导体芯片106和引线112。在一个实施例中，引线框衬底102的厚度在125μm到200μm的范围内。使用低温联接（LTJ）工艺经由电气和热界面104将引线框衬底102联接到半导体芯片106。外罩110包括模塑材料或另一适当材料。外罩110包围引线框衬底102、电气和热界面104、半导体芯片106、接合线108和引线112的部分。
图2示出了半导体器件120的另一个实施例的剖面图。在一个实施例中，半导体器件120是高温（即高达及超出200℃）高功率电子模块。功率电子模块120包括金属底板124、烧结接头126、包括金属表面或层128和132的金属化陶瓷衬底130、电气和热界面134、半导体芯片136、接合线138、电路板140、控制接触部142、电力接触部144、灌封（potting）146和148以及外罩150。
陶瓷衬底130包括Al2O3、AlN、Si3N4或其他适当材料。在一个实施例中，陶瓷衬底130每一个具有处在0.2mm到2.0mm的范围内的厚度。金属层128和132包括Cu、Al或另一适当材料。在一个实施例中，金属层128和/或132镀有Ni、Ag、Au和/或Pd。在一个实施例中，金属层128和132每一个具有处在0.1mm到0.6mm的范围内的厚度。烧结接头126将金属层128联接到金属底板124。电气和热界面134将金属层132联接到半导体芯片136。与先前参照图1所描述并且示出的电气和热界面104类似，每一个电气和热界面134包括散热器和烧结接头。
半导体芯片136通过接合线138电耦合到金属层132。接合线138包括Al、Cu、Al-Mg、Au或另一适当材料。在一个实施例中，使用超声线接合将接合线138接合到半导体芯片136和金属层132。金属层132电耦合到电路板140和电力接触部144。电路板140电耦合到控制接触部142。
外罩150包围烧结接头126、包括金属层128和132的金属化陶瓷衬底130、电气和热界面134、半导体芯片136、接合线138、电路板140、控制接触部142的部分以及电力接触部144的部分。外罩150包括工业（technical）塑料或另一适当材料。外罩150被联接到金属底板124。在一个实施例中，使用单个金属化陶瓷衬底130，使得排除金属底板124并且将外罩150直接联接到单个金属化陶瓷衬底130。
灌封材料146填充外罩150内的电路板140下方的在烧结接头126、包括金属层128和132的金属化陶瓷衬底130、电气和热界面134、半导体芯片136以及接合线138周围的区域。灌封材料148填充外罩150内的电路板150上方的在控制接触部142的部分和电力接触部144的部分周围的区域。灌封材料146和148包括硅酮凝胶或另一适当材料。灌封材料146和148防止电介质击穿对功率电子模块120造成破坏。
图3示出了包括在半导体芯片216与衬底202之间的电气和热界面的半导体器件的一部分200的一个实施例的剖面图。在一个实施例中，部分200可以被用在先前分别参照图1和2所描述并示出的模块100或模块120中。部分200包括金属化陶瓷衬底202、烧结接头210、散热器212、半导体芯片背面金属214、半导体芯片216、半导体芯片正面金属218和接合线220。
金属化陶瓷衬底202包括陶瓷衬底206、直接接触陶瓷衬底206的第一面的第一金属层204以及直接接触陶瓷衬底206的与第一面相对的第二面的第二金属层208。陶瓷衬底206包括Al2O3、AlN、Si3N4或其他适当材料。金属层204和208包括Cu、Al或另一适当材料。在一个实施例中，金属层204和/或208镀有Ni、Ag、Au和/或Pd。在一个实施例中，金属层204和208使用直接铜接合（DCB）工艺、直接铝接合工艺（DAB）工艺或活性金属钎焊（AMB）工艺而接合到陶瓷衬底206。在另一个实施例中，金属化陶瓷衬底202被引线框衬底所替代，比如先前参照图1所描述并示出的引线框衬底102。
烧结接头210将金属化陶瓷衬底202的金属层208电耦合到散热器212。在另一个实施例中，烧结接头210将引线框衬底电耦合到散热器212。烧结接头210是包括烧结纳米颗粒的烧结金属层，所述烧结纳米颗粒比如Ag纳米颗粒、Au纳米颗粒、Cu纳米颗粒或者其他适当纳米颗粒。烧结接头210可能包括由于制造工艺所致的空隙或瑕疵。
散热器212直接接触烧结接头210和半导体芯片背面金属214，并且提供半导体芯片216与烧结接头210之间的缓冲以在烧结接头210的空隙或瑕疵周围从半导体芯片216耗散热量。在一个实施例中，散热器212包括具有与半导体芯片216相同的长度和宽度的固体平面材料层，使得散热器212覆盖半导体芯片216的整个背面。在一个实施例中，散热器212包括具有高热导率的材料层，比如Cu、Ag、碳纳米管或其他适当材料。可以把具有高达2000W/mK的热导率的碳纳米管混合到金属层中以提供散热器212。
在一个实施例中，在晶片处理期间在半导体芯片背面金属214上沉积或生长散热器212的材料层。通过在晶片处理期间沉积或生长所述材料层，可以获得具有低缺陷密度的一层。散热器212在半导体芯片背面金属214与烧结接头210之间具有至少4μm的厚度。在其他实施例中，散热器212的厚度处在4μm与100μm之间，比如5μm、8μm、10μm、20μm、50μm或100μm。此外，在一个实施例中，散热器212具有至少300W/mK的热导率。
半导体芯片背面金属214将半导体芯片216的背面电气且热耦合到散热器212。半导体芯片背面金属214包括任何适当金属层或金属层的层叠。在一个实施例中，半导体芯片背面金属214包括Cr/Ni/Ag、Al/X/Y/Ni/Ag或Al/X/Y/Ni/Au层的层叠，其中“X”和“Y”是任何适当金属。在一个实施例中，半导体芯片背面金属214的厚度是1μm或更小。由于半导体芯片背面金属214的1μm或更小的相对小厚度，所述半导体芯片背面金属本身对散热没有显著贡献。
半导体芯片216包括功率半导体组件，比如绝缘栅双极型晶体管（IGBT）、金属氧化物半导体场效应晶体管（MOSFET）和/或二极管（即续流二极管）。在没有散热器212的情况下，半导体芯片216的Si（其热导率至多为散热器212的三分之一）将必须在烧结接头210的空隙或瑕疵周围散布热量。半导体芯片正面金属218将半导体芯片216的正面电耦合到接合线220。半导体芯片正面金属218包括Cu、Al或另一适当材料。在一个实施例中，半导体芯片正面金属218镀有Ni、Ag、Au和/或Pd。接合线220包括Al、Cu、Al-Mg、Au或另一适当材料。
图4示出了包括在半导体芯片216与衬底202和256之间的电气和热界面的半导体器件的一部分250的一个实施例的剖面图。在一个实施例中，部分250可以被用在先前参照图2所描述并示出的模块120中。部分250包括第一金属化陶瓷衬底202、第一烧结接头210、第一散热器212、半导体芯片背面金属214、半导体芯片216、第二散热器252、第二烧结接头254以及第二金属化陶瓷衬底256。
第一金属化陶瓷衬底202、第一烧结接头210、第一散热器212、半导体芯片背面金属214和半导体芯片216与先前参照图3所描述并示出的相同。第二金属化陶瓷衬底256类似于金属化陶瓷衬底202，并且包括陶瓷衬底260、直接接触陶瓷衬底260的第一面的第一金属层258以及直接接触陶瓷衬底260的与第一面相对的第二面的第二金属层262。
第二烧结接头254将第二金属化陶瓷衬底256的金属层258电耦合到第二散热器252。烧结接头254类似于烧结接头210，并且是包括烧结纳米颗粒的烧结金属层，所述烧结纳米颗粒比如Ag纳米颗粒、Au纳米颗粒、Cu纳米颗粒或其他适当纳米颗粒。烧结接头254可能包括由于制造工艺所致的空隙或瑕疵。
第二散热器252直接接触烧结接头254和半导体芯片216，并且提供半导体芯片216与烧结接头254之间的缓冲以在烧结接头254的空隙或瑕疵周围从半导体芯片216耗散热量。在一个实施例中，第二散热器252包括其长度和/或宽度比半导体芯片216略小的固体平面材料层，使得第二散热器252覆盖半导体芯片216的正面的大部分。在一个实施例中，第二散热器252包括具有高热导率的材料层，比如Cu、Ag、碳纳米管或其他适当材料。可以将具有高达2000W/mK的热导率的碳纳米管混合到金属层中以提供第二散热器252。
在一个实施例中，在晶片处理期间在半导体芯片216的正面上沉积或生长第二散热器252的材料层。通过在晶片处理期间沉积或生长所述材料层，可以获得具有低缺陷密度的一层。第二散热器252在半导体芯片216的正面与烧结接头254之间具有至少4μm的厚度。在其他实施例中，第二散热器252的厚度处在4μm与100μm之间，比如5μm、8μm、10μm、20μm、50μm或100μm。在一个实施例中，第二散热器252的厚度被选择成使得半导体芯片216与第二金属化陶瓷衬底256之间的距离适于将半导体芯片216的边缘终结与第二金属化陶瓷衬底256隔离。此外，在一个实施例中，第二散热器212具有至少300W/mK的热导率。
图5A示出了散热器300A的一个实施例的剖面图。在一个实施例中，使用散热器300A以替代先前参照图3和4所描述并示出的散热器212和/或252。散热器300A包括第一固体平面金属层302与第二固体平面金属层304的层叠。在该实施例中，第一金属层302是Ag层而第二金属层304是Cu层以提供Cu/Ag层的层叠。第二金属层304的厚度大于第一金属层302的厚度。在半导体器件中，第一金属层302直接接触烧结接头，而第二金属层304直接接触半导体芯片或半导体芯片的背面金属。
图5B示出了散热器300B的另一个实施例的剖面图。在一个实施例中，使用散热器300B以替代先前参照图3和4所描述并示出的散热器212和/或252。散热器300B包括第一固体平面金属层310、第二固体平面金属层312和第三固体平面金属层314的层叠。在该实施例中，第一金属层310是Ag层，第二金属层312是Cu层，而第三金属层314是Ni层，以提供Ni/Cu/Ag层的层叠。
第二金属层312的厚度大于第一金属层310的厚度和第三金属层314的厚度。在一个实施例中，第二金属层312的厚度大于第一金属层310与第三金属层314的组合厚度。在半导体器件中，第一金属层310直接接触烧结接头，而第三金属层314直接接触半导体芯片或半导体芯片的背面金属。
图5C示出了散热器300C的另一个实施例的剖面图。在一个实施例中，使用散热器300C以替代先前参照图3和4所描述并示出的散热器212和/或252。散热器300C包括第一固体平面金属层320、第二固体平面金属层322、第三固体平面金属层324和第四固体平面金属层326的层叠。在该实施例中，第一金属层320是Ag层，第二金属层322是Ni层，第三金属层324是Cu层，而第四金属层326是Ni层，以提供Ni/Cu/Ni/Ag层的层叠。
第三金属层324的厚度大于第一金属层320的厚度、第二金属层322的厚度和第四金属层326的厚度。在一个实施例中，第三金属层324的厚度大于第一金属层320、第二金属层322和第四金属层326的组合厚度。在半导体器件中，第一金属层320直接接触烧结接头，而第四金属层326直接接触半导体芯片或半导体芯片的背面金属。
实施例提供了一种半导体器件，其中在晶片处理期间应用相对厚的导体层作为半导体芯片与烧结接头之间的缓冲。所述导体层在烧结接头的任何空隙或瑕疵周围对半导体芯片耗散的热量进行散布，从而改进了半导体芯片与半导体芯片所附着的（一个或多个）衬底之间的热界面。
虽然在这里示出并描述了具体实施例，但是本领域普通技术人员将明白，在不背离本公开内容的范围的情况下可以用多种替换的和/或等效的实现方式代替所示出并描述的具体实施例。本申请旨在覆盖在这里所讨论的具体实施例的任何适配或变型。因此，本公开内容旨在仅由权利要求及其等效物限制。

Claims (19)

1.一种半导体器件，包括：
包括背面金属的半导体芯片；
衬底；
直接接触背面金属的导电散热器，所述散热器具有在半导体晶片处理期间沉积或生长的材料层并且具有4μm与20μm之间的厚度；以及
直接接触散热器并且将散热器与衬底电耦合的烧结接头；
其中所述背面金属包括Al/X/Y/Ni/Ag或Al/X/Y/Ni/Au层的层叠，其中“X”和“Y”是金属材料。
2.权利要求1的半导体器件，其中所述散热器包括固体平面Cu层和固体平面Ag层之一。
3.权利要求1的半导体器件，其中所述散热器包括碳纳米管。
4.权利要求1的半导体器件，其中所述散热器具有大于300W/mK的热导率。
5.权利要求1的半导体器件，其中所述散热器由Cu/Ag层的层叠构成，其中Ag层直接接触烧结接头。
6.权利要求1的半导体器件，其中所述散热器由Ni/Cu/Ag层的层叠构成，其中Ag层直接接触烧结接头并且Cu层的厚度大于Ni层和Ag层当中的每一个的厚度。
7.权利要求1的半导体器件，其中所述散热器由Ni/Cu/Ni/Au层的层叠构成，其中Au层直接接触烧结接头并且Cu层的厚度大于Ni层和Au层当中的每一个的厚度。
8.权利要求1的半导体器件，其中所述衬底包括金属化陶瓷衬底。
9.权利要求1的半导体器件，其中所述衬底包括引线框。
10.一种半导体器件，包括：
包括背面金属的半导体芯片；
直接接触背面金属的第一散热器；
第一衬底；
直接接触第一散热器并且将第一散热器与第一衬底电耦合的第一烧结接头；
直接接触并且电耦合到半导体芯片的正面的第二散热器；
第二衬底；以及
直接接触第二散热器并且将第二散热器电耦合到第二衬底的第二烧结接头；
其中所述背面金属包括Al/X/Y/Ni/Ag或Al/X/Y/Ni/Au层的层叠，其中“X”和“Y”是金属材料，并且
其中第一和第二散热器中的至少一个具有在半导体晶片处理期间沉积或生长的材料层并且具有4μm与20μm之间的厚度。
11.权利要求10的半导体器件，其中第一散热器包括Cu和Ag之一，并且
其中第二散热器包括Cu和Ag之一。
12.权利要求10的半导体器件，其中第一散热器包括碳纳米管，并且
其中第二散热器包括碳纳米管。
13.权利要求10的半导体器件，其中所述半导体芯片包括功率半导体芯片。
14.权利要求10的半导体器件，其中第一衬底包括金属化陶瓷衬底；并且
其中第二衬底包括金属化陶瓷衬底。
15.一种用于制造半导体器件的方法，所述方法包括：
提供包括背面金属的半导体芯片，其中所述背面金属包括Al/X/Y/Ni/Ag或Al/X/Y/Ni/Au层的层叠，其中“X”和“Y”是金属材料；
形成直接接触背面金属的第一散热器，其中第一散热器具有在半导体晶片处理期间沉积或生长的材料层并且具有4μm与20μm之间的厚度；以及
经由烧结工艺将第一散热器电耦合到第一衬底，以提供直接接触第一散热器和第一衬底的第一烧结接头。
16.权利要求15的方法，还包括：
在半导体芯片的正面上形成第二散热器；以及
经由烧结工艺将第二散热器电耦合到第二衬底，以提供直接接触第二散热器和第二衬底的第二烧结接头。
17.权利要求15的方法，其中形成第一散热器包括形成Cu/Ag层的层叠。
18.权利要求15的方法，其中形成第一散热器包括形成Ni/Cu/Ag层的层叠。
19.权利要求15的方法，其中形成第一散热器包括形成Ni/Cu/Ni/Au层的层叠。
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