CN115088065A - 电路体、电力转换装置及电路体的制造方法 - Google Patents

电路体、电力转换装置及电路体的制造方法 Download PDF

Info

Publication number
CN115088065A
CN115088065A CN202080096165.7A CN202080096165A CN115088065A CN 115088065 A CN115088065 A CN 115088065A CN 202080096165 A CN202080096165 A CN 202080096165A CN 115088065 A CN115088065 A CN 115088065A
Authority
CN
China
Prior art keywords
sheet
circuit body
sealing material
conductor plate
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080096165.7A
Other languages
English (en)
Inventor
露野円丈
高木佑辅
金子裕二朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Astemo Ltd
Original Assignee
Hitachi Astemo Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Astemo Ltd filed Critical Hitachi Astemo Ltd
Publication of CN115088065A publication Critical patent/CN115088065A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334Auxiliary members in encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49568Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0618Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181On opposite sides of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73221Strap and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73263Layer and strap connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02PCONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

本发明具备:功率半导体元件;第一导体板,其与所述功率半导体元件的一个面连接;第一片状构件,其具有第一树脂绝缘层且至少覆盖所述第一导体板的表面;密封材料,其密封所述功率半导体元件、所述第一导体板及所述第一片状构件的端部;以及第一冷却构件,其与所述第一片状构件密接,所述第一片状构件具有:所述第一片状构件的所述端部被所述密封材料覆盖而成的埋没部;作为与所述第一导体板的表面重叠的区域的散热面部;以及作为所述埋没部和所述散热面部之间的区域的余白部,所述余白部比所述散热面部向内部后退,所述埋没部比所述余白部向内部后退。

Description

电路体、电力转换装置及电路体的制造方法
技术领域
本发明涉及电路体、电力转换装置以及电路体的制造方法。
背景技术
使用了功率半导体元件的开关的电力转换装置,由于转换效率高,所以被广泛用于民用、车载用、铁路用、变电设备等。该功率半导体元件由于通电而发热,因此要求高的散热性。例如,在车载用中,为了小型、轻量化而采用使用水冷的高效率的装置。
在专利文献1中,公开了如下的电路体:密封半导体元件和散热器的模塑树脂在包围散热面的位置设置凹部,绝缘片覆盖散热面的整体,并且端部粘接于凹部内。
现有技术文献
专利文献
专利文献1:日本专利特开2013-258334号公报
发明内容
发明要解决的问题
在专利文献1记载的装置的散热面上密接有冷却构件的情况下,如果电路体产生翘曲,则与冷却构件之间的密接性减弱,散热性受损。
解决问题的技术手段
本发明的电路体具备:功率半导体元件;第一导体板,其与所述功率半导体元件的一个面连接;第一片状构件,其具有第一树脂绝缘层并至少覆盖所述第一导体板的表面;密封材料,其密封所述功率半导体元件、所述第一导体板以及所述第一片状构件的端部;以及第一冷却构件,其与所述第一片状构件密接,所述第一片状构件具有:所述第一片状构件的所述端部被所述密封材料覆盖的埋没部;作为与所述第一导体板的表面重叠的区域的散热面部;以及作为所述埋没部和所述散热面部之间的区域的余白部,所述余白部比所述散热面部向内部后退,所述埋没部比所述余白部向内部后退。
本发明的电路体的制造方法由如下工序构成:第一工序,是用密封材料密封功率半导体元件、与所述功率半导体元件的一个面连接的第一导体板、具有第一树脂绝缘层且至少覆盖所述第一导体板的表面的第一片状构件的工序,所述第一片状构件具有:所述第一片状构件的端部被所述密封材料覆盖的埋没部;作为与所述第一导体板的表面重叠的区域的散热面部;和作为所述埋没部与所述散热面部之间的区域的余白部,使所述埋没部比所述散热面部及所述余白部向内部后退,用所述密封材料密封;第二工序,使所述密封材料固化收缩,使所述余白部比所述散热面部向内部后退;第三工序,使冷却构件与所述第一片状构件密接。
发明的效果
根据本发明,即使电路体产生翘曲,也能够确保与冷却构件之间的密接性,不损害散热性。
附图说明
图1是电路体的平面图。
图2是电路体的图1所示的X-X线的剖面图。
图3是电路体的图1所示的Y-Y线的剖面图。
图4是图1所示的X-X线的功率模块的剖面立体图。
图5的(a)~(c)是表示电路体的制造方法的剖面图。
图6的(d)~(f)是表示电路体的制造方法的剖面图。
图7是表示第一片状构件的端部附近的图。
图8是表示第一片状构件的端部附近的详细情况的变形例1。
图9是表示第一片状构件的端部附近的详细情况的变形例2。
图10是表示密封材料的收缩量与温度的关系的图。
图11的(a)是本实施方式中的电路体的剖面示意图,(b)是比较例1的剖面示意图,(c)是比较例2的剖面示意图。
图12是本实施方式中的功率模块的半透视俯视图。
图13是本实施方式中的功率模块的电路图。
图14是使用电路体的电力转换装置的电路图。
图15是电力转换装置的外观立体图。
图16是图15所示的电力转换装置的XV-XV线的剖面立体图。
具体实施方式
以下,参照附图说明本发明的实施方式。以下的记载和附图是用于说明本发明的示例,为了使说明明确,适当进行了省略和简化。本发明也可以以其他各种方式实施。只要没有特别限定,各构成要素可以是单数也可以是复数。
为了便于理解本发明,附图所示的各构成要素的位置、大小、形状、范围等有时不表示实际的位置、大小、形状、范围等。因此,本发明不限于附图中公开的位置、大小、形状、范围等。
图1是本实施方式的电路体400的俯视图,图2是电路体400的图1所示的X-X线的剖面图。图3是电路体400的图1所示的Y-Y线的剖面图。
如图1所示,电路体400由3个功率模块300和冷却构件340构成。功率模块300具有使用半导体元件转换直流电流和交流电流的功能,通过通电而发热。因此,形成使制冷剂在冷却构件340中流通而冷却的结构。制冷剂使用水或在水中混入了乙二醇的防冻液等。另外,冷却构件340也可以是销状的散热片竖立设置在冷却构件340的底板上的构成。冷却构件340优选为导热率高且轻量的铝基。冷却构件340通过挤压成型、锻造、钎焊等制作。
功率模块300在一侧具备与直流电路的电容器模块500(参照后述的图14)连结的正极侧端子315B及负极侧端子319B。在正极侧端子315B及负极侧端子319B的另一侧,具有与交流电路的电动发电机192、194(参照后述的图14)连结的交流侧端子320B等流过大电流的功率端子。另外,在另一侧,具有下臂栅极信号端子325L、镜像发射极信号端子325M、开尔文发射极信号端子325K、上臂栅极信号端子325U、镜像发射极信号端子325M、开尔文发射极信号端子325K等用于功率模块的控制的信号端子等。
如图2所示,作为形成上臂电路的第一功率半导体元件,具备有源元件155、二极管156。作为构成有源元件155的半导体材料,可以使用例如Si、SiC、GaN、GaO、C等。当使用有源元件155的体二极管时,可以省略二极管156。有源元件155的集电极侧和二极管156的阴极侧接合到第二导体板431。第一导体板430接合到有源元件155的发射极侧和二极管156的阳极侧。在这些接合中,可以使用焊锡,也可以使用烧结金属。另外,第一导体板430、第二导体板431只要是导电性和导热率高的材料,则没有特别限定,但优选铜基或铝基材料。它们可以单独使用,也可以为了提高与焊锡或烧结金属的接合性而实施Ni或Ag等的镀敷。为了确保绝缘距离,第一导体板430在与第一功率半导体元件155、156连接的区域的外周具有凹陷(详细情况参照后述的图4)。
在第一导体板430上,隔着第一片状构件440、进而隔着热传导构件453密接有冷却构件340。第一片状构件440通过层叠第一树脂绝缘层442和金属箔444而构成,金属箔444侧与热传导构件453密接。
在第二导体板431上,隔着第二片状构件441、进而隔着热传导构件453密接有冷却构件340。第二片状构件441通过层叠第二树脂绝缘层443和金属箔444而构成,金属箔444侧与热传导构件453密接。
如图3所示,作为形成下臂电路的第二功率半导体元件,具备有源元件157、二极管158(参照后述的图12、图13)。另外,在图3中,二极管158在X轴方向上配置在有源元件157的里侧。有源元件157的集电极侧和二极管158的阴极侧接合到第四导体板433。第三导体板432接合到有源元件157的发射极侧和二极管158的阳极侧。
如图2所示,第一片状构件440和第二片状构件441具有被密封材料360覆盖的埋没部C、作为与第一导体板430、第二导体板431的表面重叠的区域的散热面部A、作为埋没部C和散热面部A之间的区域的余白部B,余白部B比散热面部A向电路体400的内部(Z轴方向)后退,埋没部C比余白部B向电路体400的内部(Z轴方向)后退,详细情况于后文中叙述。
如图3所示,第一导体板430、第二导体板431、第三导体板432、第四导体板433除了通电的作用之外,还起到将第一功率半导体元件155、156、第二功率半导体元件157、158产生的热向冷却构件340传递的传热构件的作用。由于各导体板430、431、432、433和冷却构件340的电位不同,所以如图2所示,在各导体板430、431、432、433和冷却构件340之间隔着具有第一树脂绝缘层442的第一片状构件440,并隔着具有第二树脂绝缘层443的第二片状构件441。在各片状构件440、441与冷却构件340之间,为了降低接触热阻而具有热传导构件453。
热传导构件453只要是导热率高的材料就没有特别限定,但优选将金属、陶瓷、碳基材料等高热传导材料与树脂材料组合使用。这是因为在热传导构件453和冷却构件340之间、热传导构件453和各片状构件440、441之间填补树脂材料,接触热阻会降低。
第一功率半导体元件155、156、第二功率半导体元件157、158、各导体板430、431、432、433、各片状构件440、441通过传递模塑成型被密封材料360密封。各片状构件440、441的第一树脂绝缘层442、第二树脂绝缘层443只要是具有与各导体板430、431、432、433的粘接性的材料即可,没有特别限定,但优选分散有粉末状的无机填充剂的环氧树脂系树脂绝缘层。这是因为粘接性和散热性的平衡好。各片状构件440、441可以是树脂绝缘层单体,但优选在与热传导构件453接触的一侧设置金属箔444。在传递模塑成型工序中,在将各片状构件440、441搭载于模具时,为了防止向模具的粘接,在各片状构件440、441与模具的接触面上设置脱模片或金属箔444。脱模片由于导热率差,所以需要在传递模塑后剥离的工序,但在金属箔444的情况下,通过选择铜基或铝基的导热率高的金属,能够在传递模塑后不剥离地使用。通过包含各片状构件440、441地进行传递模塑,各片状构件440、441的端部被密封材料360覆盖,由此具有提高产品的可靠性的效果。
图4是图1所示的X-X线的功率模块300的剖面立体图,表示从电路体400除去冷却构件340的状态。如图4所示,第一片状构件440具有被密封材料360覆盖的埋没部C、作为与第一导体板430的表面重叠的区域的散热面部A、作为埋没部C和散热面部A之间的区域的余白部B,余白部B比散热面部A向功率模块300的内部后退,埋没部C比余白部B向功率模块300的内部后退。由此,在使冷却构件340密接在第一片状构件440上的情况下,即使电路体400产生翘曲,也能够确保与冷却构件340之间的密接性,不损害散热性。
图5的(a)~(c)、图6的(d)~(f)是表示电路体400的制造方法的剖面图。在各图的左侧表示图1所示的X-X线的1个功率模块的剖面图,在右侧表示图1所示的Y-Y线的1个功率模块的剖面图。
图5的(a)是表示焊接工序及引线接合工序的图。在第二导体板431上连接作为第一功率半导体元件的有源元件155的集电极侧和二极管156的阴极侧,通过引线接合连接有源元件155的栅极电极。将有源元件155的发射极侧和二极管156的阳极侧连接到第一导体板430。同样,在第四导体板433上连接作为第二功率半导体元件的有源元件157的集电极侧和二极管158的阴极侧,通过引线接合连接有源元件157的栅极电极。将有源元件157的发射极侧和二极管158的阳极侧连接到第三导体板432。
图5的(b)是表示模具设置工序的图。传递模塑装置601将弹簧602和片状构件440、441真空吸附在模具上。用于将片状构件440、441真空吸附在模具上的真空脱气机构等省略图示。在预先加热到175℃的恒温状态的模具内,通过真空吸附保持使用夹具对位的片状构件440、441。在此,将预先预热到175℃的电路体310设置在离开片状构件440、441的状态的模具内。
图5的(c)是表示传递模塑工序的图。在片状构件440、441与电路体310分离的状态下,使上下模具接近,仅使设置在未图示的上下模具周围的衬垫接触。接着,对模具的模腔内进行真空排气。当真空排气完成以达到规定气压以下时,完全紧固上下模具,以进一步压扁衬垫。此时,片状构件440、441与电路体310接触。在真空状态下,片状构件440、441与电路体310接触,通过弹簧602的加压力而密接,因此能够不卷入空隙而密接。
接着,将密封材料360注入模具的模腔内。用于传递模塑的模具是散热面部A和余白部B为同一面而不向内部后退,埋没部C比散热面部A和余白部B向内部后退的形状。即,在该工序中,埋没部C比散热面部A和余白部B向内部后退,用密封材料360密封。换言之,散热面部A和余白部B为同一面,不向内部后退,埋没部C向内部后退而密封。
图6的(d)是表示固化工序的图。从传递模塑装置601取出用密封材料360密封的功率模块300,在常温下冷却,进行2小时以上的固化。由此,通过密封材料360的固化收缩及冷却收缩,余白部B比散热面部A向功率模块300的内部后退。埋没部C比余白部B向功率模块300的内部后退。特别是,功率模块300在X轴方向的一侧具备与电容器模块500(参照后述的图14)连结的正极侧端子315B及负极侧端子319B,在另一侧具备与交流电路的电动发电机192、194(参照后述的图14)连结的交流侧端子320B等功率端子。因此,在功率模块300的X轴方向的两端,密封材料360的量变多,通过密封材料360的固化收缩及冷却收缩,使余白部B比散热面部A向功率模块300的内部后退的效果更加显著。
图6的(e)是表示冷却构件340的设置工序的图。隔着热传导构件453将冷却构件340紧贴于功率模块300的两个表面。由此,冷却构件340隔着热传导构件453与第一片状构件440、第二片状构件441密接。
图6的(f)是表示通过以上工序制造的电路体400的图。这样,在电源模块300的两面设置冷却构件340,制造电路体400。
图7是表示图5的(c)所示的传递模塑工序中的第一片状构件440的端部附近的图。在图7中,第一片材构件440由虚线表示。第一片状构件440由传递模塑装置601按压在第一导体板430上。然后,用密封材料360进行密封。
由于片状构件440的埋没部C比余白部B向内部后退,所以在埋没部C,片状构件440的端部被密封材料360覆盖。然后,在埋没部C中,在片状构件440和模具之间阻止密封材料360和由密封材料360的树脂成分构成的树脂飞边流入余白部B。
片状构件440真空吸附在传递模塑装置601的模具上,但其吸附力比注入密封材料360的成型压力Pa小很多。另外,注入密封材料360的模具内部由于真空成型而被排气时,吸附力进一步变弱。因此,在片状构件440和传递模塑装置601的模具之间,密封材料360和由密封材料360中的树脂成分构成的树脂飞边从片状构件440的外周部(端部)440-1流入。此时,如果对模具进行加工以使得在相较于片状构件440的外周部(端部)440-1而言的少许内侧产生凸部601-1,则密封材料360或树脂飞边在该凸部601-1处停止。
对于在凸部601-1停止密封材料360或树脂飞边的原理进行说明。如图7所示,在密封材料360流入模具的过程中,首先,由流动的密封材料360产生的成型压力Pa将片状构件440按压在模具上,然后,在模具内部大致被密封材料360填充后,比以往大一级的最终成型压力Pa作为静水压被施加在密封材料360上。此时,密封材料360也流入微小的间隙,密封材料360和树脂飞边从片状构件440的外周部(端部)440-1流入片状构件440和模具的狭小间隙。但是,由于间隙狭窄,所以密封材料360流入的压力Pb产生损失。在密封材料360流入到片状构件440和模具的间隙中之前,若具有凸部601-1,则密封材料360要流入到片状构件440和模具的狭小间隙中的压力Pb作用于与要将片状构件440按压在模具上的成型压力Pa相反的方向。此时,要将片状构件440按压在模具上的成型压力Pa由于在狭窄的间隙中流动而比压力Pb高,因此流入片状构件440和模具之间的密封材料360因凸部601-1而停止。特别是接近直角的凸部601-1为极少的一部分时,要将片状构件440按压在模具上的成型压力Pa与密封材料360要流入片状构件440和模具的狭小间隙的压力Pb完全对抗,因此在停止密封材料360或树脂飞边方面非常有效地发挥作用。这样,在埋没部C,片状构件440的外周部(端部)440-1被密封材料360或树脂飞边覆盖。
并且,通过图6的(d)所示的固化工序,余白部B比散热面部A向内部后退,另外,埋没部C比余白部B向内部后退,因此,详细情况如后所述那样即使在电路体400上产生翘曲,也能够以较高的面压将散热面部A向冷却构件340按压。
图8是变形例1,是表示第一片状构件440的端部附近的详细情况的图。在图8中,第一片状构件440由虚线表示。第一片状构件440配置在第一导体板430和冷却构件340之间。并且,通过图6的(d)所示的固化工序,余白部B比散热面部A向内部后退,另外,埋没部C比余白部B向内部后退。在该变形例1中,示出了通过固化工序使余白部B比散热面部A急剧地向内部后退的例子,但也可以是这样的形状。
图9是变形例2,是表示第一片状构件440的端部附近的详细情况的图。在图9中,第一片状构件440用虚线表示。第一片状构件440配置在第一导体板430和冷却构件340之间。并且,通过图6的(d)所示的固化工序,余白部B比散热面部A向内部后退,另外,埋没部C比余白部B向内部后退。在该变形例2中,示出了通过固化工序使余白部B随着从散热面部A离开而逐渐向内部后退的例子,但也可以是这样的形状。
另外,除了变形例1、变形例2以外,只要余白部B比散热面部A向内部后退,而且,埋没部C比余白部B向内部后退即可,例如,虽然省略图示,但也可以在余白部B上形成槽。
图10是表示密封材料360的收缩量与温度的关系的图。横轴表示温度,纵轴表示收缩量。
例如在温度为175℃的Tmold下,向传递模塑装置601的模具内注入密封材料360。以刚注入后的尺寸为基准,注意功率模块300的构成构件的Z轴方向的收缩。当从功率模块300的有源元件155、157的发射极侧向集电极侧观察构成构件时,为第一片状构件440、第一导体板430及第三导体板432、焊锡、第一功率半导体元件155、156及第二功率半导体元件157、158、焊锡、第二导体板431及第四导体板433、第二片状构件441。各片状构件440、441通过层叠厚度为100μm至500μm的树脂绝缘层和厚度为30μm至200μm的金属箔而形成。各导体板430、431由厚度为1mm至5mm的铜基材料制成。焊锡由厚度为50μm至200μm的锡基材料制成。第一功率半导体元件155、156和第二功率半导体元件157、158由厚度为80μm至200μm的硅基材料制成。
虽然由各种材料构成,但在本实施方式中,以最厚的构成材料即铜基材料为代表,用纯铜的热收缩量近似地说明这些各构成构件的Z轴方向的收缩量。密封材料360在被注入传递模塑装置601的模具内后,随着固化反应的进行而固化收缩。固化收缩量根据密封材料360的组成而变化。根据进行固化反应的环氧树脂成分的比例和不进行固化反应的其他填充剂的比例而变化,环氧树脂成分的比例越多,固化收缩量越大。即使环氧树脂成分的比例相同,作为反应性成分的环氧基在环氧树脂成分中所占的比例越大,固化收缩量越大。从传递模塑装置601的模具取出的功率模块300被冷却到常温。
如图10所示的密封材料α、γ那样,在玻璃化转变温度αt、γt分别比Tmold低的情况下,到玻璃化转变温度αt、γt为止以大的收缩量收缩,如果温度比玻璃化转变温度αt、γt低,则以比其小的收缩量收缩。
如图10所示的密封材料β那样,在玻璃化转变温度高于Tmold的情况下,以一定的收缩量收缩。T1是功率模块300的使用环境温度的最小值,T2是使用环境温度的最大值,例如T1是-40℃,T2是125℃。在该温度区域中,在收缩量大于铜Cu的情况下,即,密封材料360的收缩量进入图10所示的阴影区域H的情况下,在使用温度区域T1-T2中,余白部B比散热面部A向内部后退。密封材料β、γ与此相符,成为在本实施方式中使用的密封材料360。密封材料β例如为多官能环氧树脂(二氧化硅填料66体积%)。密封材料γ例如为酚醛清漆型环氧树脂(二氧化硅填料66体积%)。由于密封材料α表示散热面部A比余白部B向内部后退,所以不符合本实施方式中使用的密封材料360。
密封材料360和Cu的收缩量的差在Z轴方向上后退到电路体400的内部。即,密封材料360相对于温度的收缩量比第一导体板430、第二导体板431、第三导体板432和第四导体板433大。因此,在通常的使用温度区域,余白部B、埋没部C比散热面部A向电路体400的内部后退。
另外,密封材料360和Cu的收缩量的差在X-Y方向上成为翘曲。一般来说,电路体400通常集电极侧的第二导体板431和第四导体板433的体积比发射极侧的第一导体板430和第三导体板432的体积大。在密封材料360的收缩量大于Cu的情况下,密封材料360比Cu更收缩。如果在集电极侧和发射极侧进行比较,则由于密封材料360所占的比例大的发射极侧比集电极侧更收缩,所以产生发射极侧凹陷的翘曲。
在冷却构件340位于单面的单面冷却结构的电路体400的情况下,即使发射极侧凹陷,由于从集电极侧散热因此产生问题的可能性也小。在冷却构件340位于两面的两面冷却结构的电路体400的情况下,由于产生发射极侧凹陷的翘曲,在发射极侧散热面部A与冷却构件340接触的距离变大,散热性可能降低。
图11的(a)是本实施方式的电路体400的剖面示意图,图11的(b)是比较例1的剖面示意图,图11的(c)是比较例2的剖面示意图。都表示产生了发射极侧凹陷的翘曲Q的情况。
如图11的(a)所示,在本实施方式中,余白部B比散热面部A向内部后退,埋没部C比余白部B向内部后退,因此,即使在电路体400上产生翘曲Q,密封材料360的端部也不会与冷却构件340抵接,散热面部A与冷却构件340密接。因此,具有散热性优异的效果。特别是,电路体400的翘曲Q在电路体400的X轴方向上显著,但在电路体400的X轴方向的两端,密封材料360的量变多,通过密封材料360的固化收缩及冷却收缩,具有使余白部B比散热面部A向功率模块300的内部后退的效果。
另一方面,如图11的(b)所示,在比较例1中,余白部B、埋没部C不比散热面部A向内部后退。因此,在电路体400上产生翘曲Q的情况下,密封材料360的端部与冷却构件340抵接,因此,冷却构件340与散热面部A的距离离开,散热性变差。
另外,如图11的(c)所示,在比较例2中,埋没部C比余白部B向内部后退,但余白部B不比散热面部A向内部后退。因此,在电路体400上产生翘曲Q的情况下,余白部B的端部附近的密封材料360与冷却构件340抵接,因此,在冷却构件340和散热面部A之间产生间隙,散热性变差。
图12是本实施方式中的功率模块300的半透视俯视图。图13是本实施方式中的电源模块300的电路图。
如图12、图13所示,正极侧端子315B从上臂电路的集电极侧输出,与电池或电容器的正极侧连接。上臂栅极信号端子325U从上臂电路的有源元件155的栅极和发射极感应输出。负极侧端子319B从下臂电路的发射极侧输出,与电池或电容器的负极侧或GND连接。下臂栅极信号端子325L从下臂电路的有源元件157的栅极和发射极感应输出。交流侧端子320B从下臂电路的集电极侧输出,与马达连接。在进行中性点接地的情况下,下臂电路不是与GND连接,而是与电容器的负极侧连接。
另外,在第一功率半导体元件(上臂电路)的有源元件155及二极管156的上下配置第一导体板(上臂电路发射极侧)430、第二导体板(上臂电路集电极侧)431。在第二功率半导体元件(下臂电路)的有源元件157及二极管158的上下配置第三导体板(下臂电路发射极侧)432、第四导体板(下臂电路集电极侧)433。
本实施方式的功率模块300是将上臂电路和下臂电路这两个臂电路一体化为一个模块的结构即2in1结构。此外,也可以使用将多个上臂电路和下臂电路一体化为一个模块的结构。在该情况下,能够减少来自功率模块300的输出端子的数量而实现小型化。
图14是使用电路体400的电力转换装置200的电路图。
电力转换装置200具备逆变器电路140、142、辅机用的逆变器电路43和电容器模块500。逆变器电路140及142通过具备多个功率模块300的电路体400(省略图示)而构成,通过将它们连接而构成三相桥式电路。在电流容量大的情况下,进一步并联连接功率模块300,通过与三相逆变器电路的各相对应地进行这些并联连接,能够应对电流容量的增大。另外,通过并联连接功率模块300中内置的功率半导体元件即有源元件155、157和二极管156、158,也能够应对电流容量的增大。
逆变器电路140和逆变器电路142的基本电路构成相同,控制方法和动作也基本相同。由于逆变器电路140等的电路动作的概要是公知的,所以在此省略详细的说明。
如上所述,上臂电路具备上臂用的有源元件155和上臂用的二极管156作为开关用的功率半导体元件,下臂电路具备下臂用的有源元件157和下臂用的二极管158作为开关用的功率半导体元件。有源元件155、157接收从构成驱动电路174的两个驱动电路的一方或另一方输出的驱动信号而进行开关动作,将从电池136供给的直流电力转换为三相交流电力。
如上所述,上臂用的有源元件155和下臂用的有源元件157包括集电极电极、发射极电极和栅极电极。上臂用的二极管156和下臂用的二极管158包括两个电极:阴极电极和阳极电极。如图13所示,二极管156、158的阴极电极与有源元件155、157的集电极电极电连接,阳极电极与有源元件155、157的发射极电极电连接。由此,从上臂用的有源元件155及下臂用的有源元件157的发射极电极朝向集电极电极的电流的流动成为正向。
另外,作为有源元件也可以使用MOSFET(金属氧化物半导体型场效应晶体管),此时,不需要上臂用的二极管156、下臂用的二极管158。
各上、下臂串联电路的正极侧端子315B和负极侧端子319B分别与电容器模块500的电容器连接用的直流端子362A、362B连接。在上臂电路和下臂电路的连接部分别产生交流电,各上、下臂串联电路的上臂电路和下臂电路的连接部与各功率模块300的交流侧端子320B连接。各相的各功率模块300的交流侧端子320B分别与电力转换装置200的交流输出端子连接,所产生的交流电力被提供给电动发电机192或194的定子绕组。
控制电路172根据来自车辆侧的控制装置或传感器(例如电流传感器180)等的输入信息,生成用于控制上臂用的有源元件155、下臂的有源元件157的开关定时的定时信号。驱动电路174根据从控制电路172输出的定时信号,生成用于使上臂用的有源元件155、下臂用的有源元件157进行开关动作的驱动信号。另外,181、182、188是连接器。
上、下臂串联电路包括未图示的温度传感器,上、下臂串联电路的温度信息被输入到控制电路172。另外,对控制电路172输入上、下臂串联电路的直流正极侧的电压信息。控制电路172根据这些信息进行过温度检测及过电压检测,在检测到过温度或过电压的情况下,使所有的上臂用的有源元件155、下臂用的有源元件157的开关动作停止,保护上、下臂串联电路不受过温度或过电压的影响。
图15是图14所示的电力转换装置200的外观立体图,图16是图15所示的电力转换装置200的XV-XV线的剖面立体图。
如图15所示,电力转换装置200具有框体12,该框体12由下部壳体11和上部壳体10构成,形成为大致长方体形状。在框体12的内部收容有电路体400、电容器模块500等。电路体400具有冷却流路,与冷却流路连通的冷却水流入管13和冷却水流出管14从框体12的一侧面突出。下部壳体11的上部侧(Z方向)开口,上部壳体10堵塞下部壳体11的开口而安装在下部壳体11上。上部壳体10和下部壳体11由铝合金等形成,相对于外部密封而被固定。也可以将上部壳体10和下部壳体11一体化而构成。通过将框体12做成单纯的长方体形状,向车辆等的安装变得容易,并且生产率也提高。
在壳体12的长度方向的一侧面上安装有连接器17,在该连接器17上连接有交流端子18。另外,在导出冷却水流入管13和冷却水流出管14的面上设有连接器21。
如图16所示,在壳体12内收容有电路体400。在电路体400的上方配置有控制电路172和驱动电路174,在电路体400的直流端子侧收容有电容器模块500。通过将电容器模块配置在与电路体400相同的高度,能够使电力转换装置200薄型化,提高向车辆的设置自由度。电路体400的交流侧端子320B贯通电流传感器180而与母线接合。另外,电路体400的直流端子即正极侧端子315B和负极侧端子319B分别与电容器模块500的正、负极端子(图13的直流端子362A、362B)接合。
根据以上说明的实施方式,能够得到以下的作用效果。
(1)电路体400具备:功率半导体元件155;与功率半导体元件155的一个面连接的第一导体板430;具有第一树脂绝缘层442并至少覆盖第一导体板430的表面的第一片状构件440;密封功率半导体元件155、第一导体板430以及第一片状构件440的端部的密封材料360;以及与第一片状构件440密接的第一冷却构件340,第一片状构件440具有第一片状构件440的端部被密封材料360覆盖的埋没部C、作为与第一导体板430的表面重叠的区域的散热面部A、以及作为埋没部C和散热面部A之间的区域的余白部B,余白部B比散热面部A向内部后退,埋没部C比余白部B向内部后退。由此,即使在电路体中产生翘曲,也能够确保与冷却构件之间的密接性,不损害散热性。
(2)电路体400的制造方法由如下工序构成:第一工序,用密封材料360密封功率半导体元件155、与功率半导体元件155的一个面连接的第一导体板430、具有第一树脂绝缘层442并至少覆盖第一导体板430的表面的第一片状构件440,第一片状构件440具有第一片状构件440的端部被密封材料360覆盖的埋没部C、作为与第一导体板430的表面重叠的区域的散热面部A、以及作为埋没部C和散热面部A之间的区域的余白部B,使埋没部C比散热面部A和余白部B向内部后退,用密封材料360密封;第二工序,使密封材料360固化收缩,使余白部B比散热面部A向内部后退;以及第三工序,使冷却构件340与第一片状构件440密接。由此,即使在电路体中产生翘曲,也能够确保与冷却构件之间的密接性,不损害散热性。
本发明不限于上述实施方式,只要不损害本发明的特征,在本发明的技术思想的范围内可考虑的其他方式也包含在本发明的范围内。
符号说明
10…上部壳体,11…下部壳体,13…冷却水流入管,14…冷却水流出管,17…连接器,18…交流端子,21…连接器,43、140、142…逆变器电路,155…第一功率半导体元件(上臂电路有源元件),156…第一功率半导体元件(上臂电路二极管),157…第二功率半导体元件(下臂电路有源元件),158…第二功率半导体元件(下臂电路二极管),172…控制电路,174…驱动电路,180…电流传感器,181、182、188…连接器,192、194…电动发电机,200…电力转换装置,300…功率模块,310…电路体,315B…正极侧端子,319B…负极侧端子,320B…交流侧端子,325K…开尔文发射极信号端子,325L…下臂栅极信号端子,325M…镜像发射极信号端子,325U…上臂栅极信号端子,340…冷却构件,360…密封材料,400…电路体,430…第一导体板(上臂电路发射极侧),431…第二导体板(上臂电路集电极侧),432…第三导体板(下臂电路发射极侧),433…第四导体板(下臂电路集电极侧),440…第一片状构件(发射极侧),441…第二片状构件(集电极侧),442…第一树脂绝缘层(发射极侧),443…第二树脂绝缘层(集电极侧),444…金属箔,453…热传导构件,500…电容器模块,601…传递模塑装置,602…弹簧,A…散热面部,B…余白部,C…埋没部。

Claims (12)

1.一种电路体,其特在在于,
具备:功率半导体元件;第一导体板,其与所述功率半导体元件的一个面连接;第一片状构件,其具有第一树脂绝缘层且至少覆盖所述第一导体板的表面;密封材料,其密封所述功率半导体元件、所述第一导体板及所述第一片状构件的端部;以及第一冷却构件,其与所述第一片状构件密接,
所述第一片状构件具有:所述第一片状构件的所述端部被所述密封材料覆盖的埋没部;作为与所述第一导体板的表面重叠的区域的散热面部;以及作为所述埋没部和所述散热面部之间的区域的余白部,所述余白部比所述散热面部向内部后退,所述埋没部比所述余白部向内部后退。
2.根据权利要求1所述的电路体,其特征在于,
具备:第二导体板,其与所述功率半导体元件的另一个面连接;第二片状构件,其具有第二树脂绝缘层并至少覆盖所述第二导体板的表面;以及第二冷却构件,其与所述第二片状构件密接,
所述密封材料密封所述第二导体板及所述第二片状构件的端部,
所述第二片状构件具有:所述第二片状构件的所述端部被所述密封材料覆盖的埋没部;作为与所述第二导体板的表面重叠的区域的散热面部;以及作为所述埋没部与所述散热面部之间的区域的余白部,所述余白部比所述散热面部向内部后退,所述埋没部比所述余白部向内部后退。
3.根据权利要求1所述的电路体,其特征在于,
所述第一片状构件是层叠所述第一树脂绝缘层和第一金属箔而成的,
所述第一冷却构件隔着所述第一金属箔与所述第一片状构件的所述散热面部密接。
4.根据权利要求2所述的电路体,其特征在于,
所述第二片状构件是层叠所述第二树脂绝缘层和第二金属箔而成的。
所述第二冷却构件隔着所述第二金属箔与所述第二片状构件的所述散热面部密接。
5.根据权利要求1所述的电路体,其特征在于,
所述第一冷却构件隔着热传导构件与所述第一片状构件密接。
6.根据权利要求2所述的电路体,其特征在于,
所述第二冷却构件隔着热传导构件与所述第二片状构件密接。
7.根据权利要求1或3所述的电路体,其特征在于,
所述密封材料相对于温度的收缩量比所述第一导体板相对于温度的收缩量大。
8.根据权利要求2或4所述的电路体,其特征在于,
所述密封材料相对于温度的收缩量比所述第二导体板相对于温度的收缩量大。
9.根据权利要求1或2所述的电路体,其特征在于,具备:
第一端子,其从所述功率半导体元件导出,与电容器连接;以及
第二端子,其在与所述第一端子相反的一侧从所述功率半导体元件导出,并与马达连接。
10.一种电力转换装置,其特征在于,
其由权利要求1~9中任一项所述的电路体构成,将直流电力转换为交流电力。
11.一种电路体的制造方法,其特征在于,由如下工序构成:
第一工序,是用密封材料密封功率半导体元件、与所述功率半导体元件的一个面连接的第一导体板、和具有第一树脂绝缘层且至少覆盖所述第一导体板的表面的第一片状构件的工序,所述第一片状构件具有所述第一片状构件的端部被所述密封材料覆盖的埋没部、作为与所述第一导体板的表面重叠的区域的散热面部、和作为所述埋没部与所述散热面部之间的区域的余白部,使所述埋没部比所述散热面部及所述余白部向内部后退,用所述密封材料密封;
第二工序,使所述密封材料固化收缩,使所述余白部比所述散热面部向内部后退;以及
第三工序,使冷却构件与所述第一片状构件密接。
12.根据权利要求11所述的电路体的制造方法,其特征在于,
所述第三工序包括隔着热传导构件使所述冷却构件与所述第一片状构件密接的工序。
CN202080096165.7A 2020-03-09 2020-12-25 电路体、电力转换装置及电路体的制造方法 Pending CN115088065A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-039863 2020-03-09
JP2020039863A JP7491707B2 (ja) 2020-03-09 2020-03-09 電気回路体、電力変換装置、および電気回路体の製造方法
PCT/JP2020/048708 WO2021181831A1 (ja) 2020-03-09 2020-12-25 電気回路体、電力変換装置、および電気回路体の製造方法

Publications (1)

Publication Number Publication Date
CN115088065A true CN115088065A (zh) 2022-09-20

Family

ID=77669700

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080096165.7A Pending CN115088065A (zh) 2020-03-09 2020-12-25 电路体、电力转换装置及电路体的制造方法

Country Status (5)

Country Link
US (1) US20230119278A1 (zh)
JP (1) JP7491707B2 (zh)
CN (1) CN115088065A (zh)
DE (1) DE112020006116T5 (zh)
WO (1) WO2021181831A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023089692A (ja) * 2021-12-16 2023-06-28 日立Astemo株式会社 半導体装置及び電力変換装置
US20230326876A1 (en) * 2022-04-06 2023-10-12 Semiconductor Components Industries, Llc Thermal performance improvement and stress reduction in semiconductor device modules
JP2024006808A (ja) * 2022-07-04 2024-01-17 日立Astemo株式会社 電気回路体および電力変換装置
CN116613110B (zh) * 2023-06-16 2024-02-23 广东气派科技有限公司 一种增强散热的盖板封装结构制备方法及盖板封装结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4120876B2 (ja) * 2003-05-26 2008-07-16 株式会社デンソー 半導体装置
JP4748173B2 (ja) * 2008-03-04 2011-08-17 株式会社デンソー 半導体モジュール及びその製造方法
JP5279632B2 (ja) * 2009-06-25 2013-09-04 三菱電機株式会社 半導体モジュール
DE112012005920B4 (de) * 2012-02-22 2022-03-24 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
JP2013258334A (ja) 2012-06-13 2013-12-26 Denso Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2021141275A (ja) 2021-09-16
US20230119278A1 (en) 2023-04-20
DE112020006116T5 (de) 2022-11-03
JP7491707B2 (ja) 2024-05-28
WO2021181831A1 (ja) 2021-09-16

Similar Documents

Publication Publication Date Title
JP7491707B2 (ja) 電気回路体、電力変換装置、および電気回路体の製造方法
CN109727960B (zh) 半导体模块、其制造方法以及电力变换装置
CN107924885B (zh) 构造体
JP7196047B2 (ja) 電気回路体、電力変換装置、および電気回路体の製造方法
JP7555257B2 (ja) 電気回路体、電力変換装置、および電気回路体の製造方法
JP6767898B2 (ja) パワー半導体装置
WO2022137692A1 (ja) 電気回路体および電力変換装置
CN113261095A (zh) 半导体装置、半导体装置的制造方法及电力转换装置
JP7555262B2 (ja) 電気回路体および電力変換装置
WO2022137704A1 (ja) パワーモジュールおよび電力変換装置
WO2023112997A1 (ja) 半導体装置及び電力変換装置
WO2023162475A1 (ja) 半導体装置及び電力変換装置
WO2024009613A1 (ja) 電気回路体および電力変換装置
WO2024106072A1 (ja) 電気回路体および電力変換装置
WO2024009617A1 (ja) 電気回路体および電力変換装置
JP7171516B2 (ja) パワー半導体モジュール、電力変換装置およびパワー半導体モジュールの製造方法
WO2022270022A1 (ja) 電気回路体および電力変換装置
WO2023100771A1 (ja) 半導体モジュール、電力変換装置、および半導体モジュールの製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination