JP6767898B2 - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
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- JP6767898B2 JP6767898B2 JP2017035669A JP2017035669A JP6767898B2 JP 6767898 B2 JP6767898 B2 JP 6767898B2 JP 2017035669 A JP2017035669 A JP 2017035669A JP 2017035669 A JP2017035669 A JP 2017035669A JP 6767898 B2 JP6767898 B2 JP 6767898B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
Claims (7)
- パワー半導体素子を有する回路体と、
前記回路体を収納するケースと、
前記回路体と前記ケースに間に配置される絶縁部材と、を備え、
前記ケースは、前記回路体と対向する第1ベース部と、枠部と、当該枠部と当該第1ベース部を接続するとともに当該第1ベース部よりも薄く形成される接続部と、を有し、
前記第1ベース部は、フィンを有する第1フィンベースと、当該第1フィンベースよりも薄くかつ前記接続部よりも厚く形成されさらに当該接続部と接続される第1中間ベースと、を有し、
前記第1中間ベースは、前記フィンの先端よりも高くまたは当該フィンの先端と同じ高さとなるように形成される突起部を有するパワー半導体装置。 - パワー半導体素子を有する回路体と、
前記回路体を収納するケースと、
前記回路体と前記ケースに間に配置される絶縁部材と、を備え、
前記ケースは、前記回路体と対向する第1ベース部と、枠部と、当該枠部と当該第1ベース部を接続するとともに当該第1ベース部よりも薄く形成される接続部と、を有し、
前記第1ベース部は、フィンを有する第1フィンベースと、当該第1フィンベースよりも薄くかつ前記接続部よりも厚く形成されさらに当該接続部と接続される第1中間ベースと、を有し、
前記第1中間ベースに前記第1フィンベースの前記フィンと同一平面で接する突起を備えるパワー半導体装置。 - 請求項1または2に記載のパワー半導体装置であって、
前記回路体を挟んで前記第1ベース部と対向する第2ベース部を備え、
前記枠部の前記接続部は、前記第1ベース部と前記第2ベース部を接続するとともに当該第1ベース部及び当該第2ベース部よりも薄く形成されるパワー半導体装置。 - 請求項1乃至3のいずれか一項に記載のパワー半導体装置であって、
前記絶縁部材の端部は、前記第1中間ベースと前記ケースの間に配置されるパワー半導体装置。 - 請求項1乃至4のいずれか一項に記載のパワー半導体装置であって、
前記第1中間ベースの厚さは、前記第1フィンベースの厚さを1とした場合、0.4以下であるパワー半導体装置。 - 請求項1乃至5のいずれか一項に記載のパワー半導体装置であって、
前記ケースは、アルミニウムを含む材料により構成され、
前記回路体は、銅を含む材料により構成されるリードフレームを導電部材として用いるパワー半導体装置。 - 請求項1乃至6のいずれか一項に記載のパワー半導体装置であって、
前記第1ベース部を挟んで前記回路体と対向するとともに冷媒を流す流路を形成する流路形成体を備えるパワー半導体装置。
Priority Applications (2)
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JP2017035669A JP6767898B2 (ja) | 2017-02-28 | 2017-02-28 | パワー半導体装置 |
PCT/JP2018/003566 WO2018159209A1 (ja) | 2017-02-28 | 2018-02-02 | パワー半導体装置 |
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JP6767898B2 true JP6767898B2 (ja) | 2020-10-14 |
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JP6771502B2 (ja) * | 2018-03-16 | 2020-10-21 | 三菱電機株式会社 | 樹脂封止型半導体装置 |
JP2022092545A (ja) * | 2020-12-10 | 2022-06-22 | 日立Astemo株式会社 | 電気回路体、電力変換装置、および電気回路体の製造方法 |
JP2022098587A (ja) * | 2020-12-22 | 2022-07-04 | 日立Astemo株式会社 | 電気回路体および電力変換装置 |
JP7428679B2 (ja) | 2021-03-24 | 2024-02-06 | 株式会社日立製作所 | パワー半導体装置および電力変換装置 |
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JP5557585B2 (ja) * | 2010-04-26 | 2014-07-23 | 日立オートモティブシステムズ株式会社 | パワーモジュール |
JP5690752B2 (ja) * | 2012-01-10 | 2015-03-25 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュールおよびパワー半導体モジュールの製造方法 |
JP6424573B2 (ja) * | 2014-11-06 | 2018-11-21 | トヨタ自動車株式会社 | 半導体装置 |
JP2016131196A (ja) * | 2015-01-13 | 2016-07-21 | トヨタ自動車株式会社 | 半導体装置 |
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