JP6192809B2 - 半導体モジュールおよび半導体モジュールを搭載した駆動装置 - Google Patents
半導体モジュールおよび半導体モジュールを搭載した駆動装置 Download PDFInfo
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- JP6192809B2 JP6192809B2 JP2016509844A JP2016509844A JP6192809B2 JP 6192809 B2 JP6192809 B2 JP 6192809B2 JP 2016509844 A JP2016509844 A JP 2016509844A JP 2016509844 A JP2016509844 A JP 2016509844A JP 6192809 B2 JP6192809 B2 JP 6192809B2
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- 239000004065 semiconductor Substances 0.000 title claims description 111
- 229920005989 resin Polymers 0.000 claims description 69
- 239000011347 resin Substances 0.000 claims description 69
- 238000007789 sealing Methods 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000011888 foil Substances 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000007665 sagging Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
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- 239000003822 epoxy resin Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Description
特許文献1に記載された従来技術では、絶縁シートが剥離する可能性が高く、さらに、後工程で、絶縁シートまたは封止樹脂のバリを除去しなければならなかった。また、特許文献2に記載された従来の手法では、絶縁シートを折り曲げる追加工程が発生し、小型化の弊害となっていた。
図1は、本発明の実施の形態1における半導体モジュールを適用した装置として、車両に装着されたパワーステアリング装置を例として示した全体回路図である。この装置は、モータ1、制御ユニット2から構成され、両部位が一体化されている。
t2>t1
とする(図3参照)。
まず始めに、成形金型のキャビティ内に、絶縁シート32を配置し、さらに、その上部に半導体素子、電子部品等を実装したリードフレーム25を載置する。この時、絶縁シート32とリードフレーム25は、金型上にある固定ピン、または可動ピンにより位置固定される。また、絶縁シート32は、リードフレーム25との密着性を高めるため、絶縁シート32のバリ、抜きダレがリードフレーム25の反対側を向くように配置される。
・絶縁シートのバリやダレを封止樹脂内部に覆うような構造がとれる結果、後工程でバリ取りを必要とせず、半導体モジュールの生産効率向上につながる。
・凸形状を位置固定用に活用することができる。
・封止樹脂が最外部となり、絶縁シートの汚れやキズを防ぐことができる。
次に、実施の形態2における半導体モジュールについて、図8〜10を参照して以下に説明する。図8は、本発明の実施の形態2における半導体モジュールの断面図である。また、図9は、本発明の実施の形態2における半導体モジュールの透視図である。さらに、図10は、本発明の実施の形態2における半導体モジュールがヒートシンク35に組み付いた状態を示す断面図である。
次に、実施の形態3における半導体モジュールについて、図11を参照して以下に説明する。図11は、本発明の実施の形態3における半導体モジュールの断面図である。
次に、実施の形態4における半導体モジュールについて、図12を参照して以下に説明する。図12は、本発明の実施の形態4における半導体モジュールの断面図および透視図である。
次に、実施の形態5における半導体モジュールについて、図13を参照して以下に説明する。図13は、本発明の実施の形態5における半導体モジュールの断面図である。
Claims (8)
- 電子部品が実装された複数ターミナルからなるリードフレームと、
前記リードフレームにおける前記電子部品が実装された面の裏面側に、前記リードフレームと平行に配置された絶縁シートと、
前記リードフレーム、前記電子部品、および前記絶縁シートを封止する樹脂封止体と
を備え、
前記絶縁シートは、前記リードフレームと接した面の裏面側の周辺部分が、前記樹脂封止体により覆われており、前記周辺部分以外の部分に相当する中央部分が、前記樹脂封止体により封止されていない領域として露出し、
前記リードフレームは、
前記樹脂封止体の外部へ導出するターミナルと、前記樹脂封止体の外部に導出しない部分とを有しており、
前記樹脂封止体が前記周辺部分を封止する際の樹脂幅をt2とし、前記ターミナルの前記樹脂封止体の内部に含まれるターミナル幅をt3としたとき、少なくとも1箇所は
t3>t2
の関係を有し、
前記樹脂幅t2に関して、前記外部に導出するターミナル近傍における樹脂幅が、前記外部に導出しない部分近傍における樹脂幅よりも大きくなるように前記樹脂封止体による封止が行われる
半導体モジュール。 - 請求項1に記載の半導体モジュールにおいて、
前記絶縁シートは、前記リードフレームと接した面の裏面側に、前記絶縁シートの寸法以下の大きさで、前記リードフレームと平行に配置された金属箔または金属ブロックに相当する金属部材を有しており、
前記樹脂封止体は、前記リードフレーム、前記電子部品、および前記金属部材を有する前記絶縁シートを封止し、
前記絶縁シートは、前記金属部材を有する裏面側の周辺部分の少なくとも一部が、前記樹脂封止体により覆われており、前記周辺部分以外の部分に相当する中央部分が、前記樹脂封止体により封止されていない領域として前記金属部材が露出している
半導体モジュール。 - 請求項1または2に記載の半導体モジュールにおいて、
前記樹脂封止体が前記周辺部分を封止する際の、樹脂高さをt1、樹脂幅をt2としたとき、
t2>t1
の関係を有するように前記樹脂封止体による封止が行われる
半導体モジュール。 - 請求項1から3のいずれか1項に記載の半導体モジュールにおいて、
前記樹脂封止体は、前記周辺部分のうち、前記ターミナルが存在する直下の位置における樹脂幅を、他の位置における樹脂幅よりも広くする
半導体モジュール。 - 請求項1から4のいずれか1項に記載の半導体モジュールにおいて、
前記絶縁シートのダレあるいはバリの方向は、前記リードフレームと接した面の裏面側を向いている
半導体モジュール。 - 請求項1から5のいずれか1項に記載の半導体モジュールにおいて、
前記電子部品は、前記樹脂封止体により封止されていない領域として露出している部分に対応する範囲内のリードフレーム上に配置されている
半導体モジュール。 - 請求項1から6のいずれか1項に記載の半導体モジュールと、
前記樹脂封止体により封止されていない領域と接するようにして位置決めして、前記半導体モジュールが搭載されるヒートシンクと
を備える半導体モジュールを搭載した駆動装置。 - 請求項7に記載の半導体モジュールを搭載した駆動装置において、
前記半導体モジュールを、前記半導体モジュールの上部から前記ヒートシンク側に向かって押さえ付けるフレーム構造
をさらに備える半導体モジュールを搭載した駆動装置。
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EP (1) | EP3125287B1 (ja) |
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JP2018085495A (ja) * | 2016-11-25 | 2018-05-31 | 京セラ株式会社 | 発光素子用基板、発光素子モジュールおよび発光装置 |
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JPH06209054A (ja) * | 1993-01-08 | 1994-07-26 | Mitsubishi Electric Corp | 半導体装置 |
JP3429921B2 (ja) * | 1995-10-26 | 2003-07-28 | 三菱電機株式会社 | 半導体装置 |
JPH10125826A (ja) | 1996-10-24 | 1998-05-15 | Hitachi Ltd | 半導体装置及びその製法 |
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JP2005353805A (ja) | 2004-06-10 | 2005-12-22 | Toshiba Corp | 半導体装置及びその製造方法 |
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US7808100B2 (en) * | 2008-04-21 | 2010-10-05 | Infineon Technologies Ag | Power semiconductor module with pressure element and method for fabricating a power semiconductor module with a pressure element |
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