JP6288254B2 - 半導体モジュールおよびその製造方法 - Google Patents
半導体モジュールおよびその製造方法 Download PDFInfo
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- JP6288254B2 JP6288254B2 JP2016515880A JP2016515880A JP6288254B2 JP 6288254 B2 JP6288254 B2 JP 6288254B2 JP 2016515880 A JP2016515880 A JP 2016515880A JP 2016515880 A JP2016515880 A JP 2016515880A JP 6288254 B2 JP6288254 B2 JP 6288254B2
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- lead frame
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- semiconductor module
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Description
図6は半導体モジュールの製造方法を示すフローチャート、図7は半導体モジュールの具体例を示す図である。
以上の工程により作られた半導体モジュールの具体例について説明する。図7に例示した半導体モジュール20は、樹脂封止前のケース3をその上面から見たものである。この半導体モジュール20は、回路ブロック11の絶縁基板7に6つの配線パターン12が形成され、それぞれの配線パターン12には、IGBTとする半導体チップ13およびFWDとする半導体チップ14が搭載されている。また、内部配線をなすリードフレーム2aには、3つの制御IC9が搭載されている。
上記については単に本発明の原理を示すものである。さらに、多数の変形、変更が当業者にとって可能であり、本発明は上記に示し、説明した正確な構成および応用例に限定されるものではなく、対応するすべての変形例および均等物は、添付の請求項およびその均等物による本発明の範囲とみなされる。
2,2a リードフレーム
3 ケース
4a,4b 側壁部
5 中央開口部
6a 段部
6b 内面
7 絶縁基板
8 開口部
9 制御IC
10 接着剤
11 回路ブロック
12 配線パターン
13,14 半導体チップ
16,17 ボンディングワイヤ
18 注型樹脂
20 半導体モジュール
Claims (10)
- ボンディングワイヤが超音波接合されるリードフレームと、
内部に前記リードフレームが搭載される搭載面を有し、外部に半導体チップを絶縁基板上に形成した回路ブロックが固定される固定面を有し、前記搭載面と前記固定面との間を貫通するように形成された開口部を有するケースと、
を備え、
前記開口部は孔であって、接着剤が充填されて前記リードフレームと前記回路ブロックとを接着していて、
前記リードフレームは、該リードフレーム側の前記開口部の直上に前記ボンディングワイヤを接合する接続箇所があることを特徴とする半導体モジュール。 - 前記開口部は、前記接続箇所のない前記リードフレームと前記回路ブロックとの間にも形成されていて内部に充填された前記接着剤により前記リードフレームと前記回路ブロックとを接着していることを特徴とする請求項1記載の半導体モジュール。
- 前記接着剤は、前記回路ブロックが前記ケースの前記固定面に固定される接着剤と同じ接着剤であることを特徴とする請求項1または2記載の半導体モジュール。
- 前記接着剤は、熱伝導率が前記ケースの熱伝導率より高いことを特徴とする請求項1記載の半導体モジュール。
- 前記接着剤は、前記ケースに充填されて前記半導体チップを樹脂封止する注型樹脂と同じ樹脂であることを特徴とする請求項1記載の半導体モジュール。
- 前記接着剤は、前記ケースよりも前記リードフレームとの密着力が高いことを特徴とする請求項1記載の半導体モジュール。
- 前記固定面は、前記絶縁基板の厚さより薄い寸法の深さを有する段部であることを特徴とする請求項1記載の半導体モジュール。
- 前記開口部は、額縁状の前記ケースの内周に対向して配置された1対の前記固定面にそれぞれ複数個設けられていることを特徴とする請求項1記載の半導体モジュール。
- 前記リードフレームは、1つの前記開口部の直上に複数の前記ボンディングワイヤが接合されることを特徴とする請求項1記載の半導体モジュール。
- 内部にリードフレームが搭載される搭載面と、前記搭載面に対応する外部に半導体チップを絶縁基板上に形成した回路ブロックが固定される固定面とを有するように、前記リードフレームをエジェクタピンまたは押えピンで支持しながら金型に樹脂を注入してケースを成型し、
前記エジェクタピンまたは前記押えピンによって孔である開口部が形成された前記ケースの前記固定面に前記開口部にも充填されるようにして接着剤を塗布し、
前記接着剤が塗布された前記ケースの前記固定面に前記回路ブロックを載置して前記回路ブロックを前記ケースに固定するとともに前記開口部を通じて前記リードフレームを前記回路ブロックに固定し、
前記リードフレーム側の前記開口部の直上にある該リードフレームの接続箇所にボンディングワイヤを超音波接合する、
ことを特徴とする半導体モジュールの製造方法。
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US11046016B2 (en) * | 2016-07-11 | 2021-06-29 | Zuiko Corporation | Ultrasonic welding device and ultrasonic welding method |
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DE112015000183T5 (de) | 2016-07-21 |
US9837338B2 (en) | 2017-12-05 |
CN105684147B (zh) | 2019-04-05 |
US20160254215A1 (en) | 2016-09-01 |
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