JP7135293B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP7135293B2 JP7135293B2 JP2017206689A JP2017206689A JP7135293B2 JP 7135293 B2 JP7135293 B2 JP 7135293B2 JP 2017206689 A JP2017206689 A JP 2017206689A JP 2017206689 A JP2017206689 A JP 2017206689A JP 7135293 B2 JP7135293 B2 JP 7135293B2
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Description
図1は、実施の形態1にかかるパワー半導体モジュールの構成を示す断面図である。パワー半導体モジュールにおいては、絶縁基板2の一方の面であるおもて面に銅などの導電性板3、他方の面である裏面には銅などの放熱板4が配置されて積層基板を構成する。積層基板の導電性板3のおもて面には、図示しない導電接合層を介して、複数のパワー半導体チップ1が搭載されている。さらにパワー半導体チップ1のおもて面には、図示しない金属ワイヤーが配線されている。また、金属ワイヤーの代わりに図示しない導電接合層を介して、金属端子を接続してもよい。また、図示しない導電接合層により金属端子(インプラントピン)を備えたインプラント方式プリント基板が取り付けられていてもよい。また、パワー半導体チップ1のおもて面には、リードフレームが取り付けられても良い。パワー半導体モジュールには、導電性板3、金属端子、リードフレームなどの金属部材を有する。そして、これらの部材の表面は、封止樹脂9で被覆されている。また、導電性板3のおもて面には、ボイドをトラップするためのエアポケット10が設けられている。エアポケット10の位置、形状、大きさ等については後述する。
次に、実施の形態2にかかる半導体装置の構造について説明する。図7は、実施の形態2にかかるパワー半導体モジュールの構成を示す断面図である。実施の形態2にかかるパワー半導体モジュールが実施の形態1にかかるパワー半導体モジュールと異なる点は、絶縁基板2と導電性板3との間に導電性薄膜12が設けられていることである。
2、22 絶縁基板
3、23 導電性板
4、30 放熱板
6、26 金属端子
9、29 封止樹脂
10 エアポケット
11 ボイド
12 導電性薄膜
24 金属基板
25 端子ケース
27 金属ワイヤー
28 蓋
Claims (9)
- 半導体素子をおもて面に搭載した導電性板と、
前記導電性板の少なくともおもて面を内部に封入する封止樹脂と、
を備え、
前記導電性板のおもて面には、封入された前記封止樹脂の流れが合流する領域に気泡をトラップする構造が設けられ、
前記導電性板は、矩形の形状であり、
前記封止樹脂は、前記導電性板の長辺側の複数の注入口から注入され、
前記気泡をトラップする構造は、前記封止樹脂が注入される側と反対側の長辺の中央のみに設けられていることを特徴とする半導体装置。 - 半導体素子をおもて面に搭載した導電性板と、
前記導電性板の少なくともおもて面を内部に封入する封止樹脂と、
を備え、
前記導電性板のおもて面には、封入された前記封止樹脂の流れが合流する領域に気泡をトラップする構造が設けられ、
前記導電性板は、矩形の形状であり、
前記封止樹脂は、前記導電性板の短辺側の注入口から注入され、
前記気泡をトラップする構造は、前記封止樹脂が注入される側と反対側の短辺の中央のみに設けられていることを特徴とする半導体装置。 - 前記気泡をトラップする構造は、前記封止樹脂の流れのベクトルの方向と垂直に設けられていることを特徴とする請求項1または2に記載の半導体装置。
- 前記気泡をトラップする構造は、溝または穴形状であることを特徴とする請求項1~3のいずれか一つに記載の半導体装置。
- 前記半導体素子をおもて面に搭載した導電性板と、絶縁基板と、放熱板とを有する積層基板を備え、
前記封止樹脂は、前記半導体素子と、前記導電性板と、前記絶縁基板とを内部に封入し、前記放熱板の裏面を露出することを特徴とする請求項1~4のいずれか一つに記載の半導体装置。 - 前記導電性板と前記絶縁基板との間に薄導電板を備え、
前記薄導電板には、前記気泡をトラップする構造が設けられていないことを特徴とする請求項5に記載の半導体装置。 - 封止樹脂の流れが合流する領域に気泡をトラップする構造を導電性板のおもて面に形成する第1工程と、
半導体素子を前記導電性板のおもて面に搭載する第2工程と、
前記封止樹脂を注入し、前記半導体素子と前記導電性板のおもて面とを内部に封入する第3工程と、
を含み、
前記導電性板は、矩形の形状であり、
前記第3工程では、前記封止樹脂を、前記導電性板の長辺側の一つの注入口から注入し、
前記封止樹脂の流れが合流する領域は、前記封止樹脂が注入される側から前記半導体素子を隔てた反対側の長辺の角の領域であることを特徴とする半導体装置の製造方法。 - 封止樹脂の流れが合流する領域に気泡をトラップする構造を導電性板のおもて面に形成する第1工程と、
半導体素子を前記導電性板のおもて面に搭載する第2工程と、
前記封止樹脂を注入し、前記半導体素子と前記導電性板のおもて面とを内部に封入する第3工程と、
を含み、
前記導電性板は、矩形の形状であり、
前記第3工程では、前記封止樹脂を、前記導電性板の長辺側の複数の注入口から注入し、
前記第1工程では、前記気泡をトラップする構造を、前記封止樹脂が注入される側と反対側の長辺の中央のみに形成することを特徴とする半導体装置の製造方法。 - 封止樹脂の流れが合流する領域に気泡をトラップする構造を導電性板のおもて面に形成する第1工程と、
半導体素子を前記導電性板のおもて面に搭載する第2工程と、
前記封止樹脂を注入し、前記半導体素子と前記導電性板のおもて面とを内部に封入する第3工程と、
を含み、
前記導電性板は、矩形の形状であり、
前記第3工程では、前記封止樹脂を、前記導電性板の短辺側の複数の注入口から注入し、
前記第1工程では、前記気泡をトラップする構造を、前記封止樹脂が注入される側と反対側の短辺の中央のみに形成することを特徴とする半導体装置の製造方法。
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CN201810986853.5A CN109712938B (zh) | 2017-10-25 | 2018-08-28 | 半导体装置以及半导体装置的制造方法 |
US16/114,980 US10468328B2 (en) | 2017-10-25 | 2018-08-28 | Semiconductor device and method of manufacturing a semiconductor device |
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