CN104756249B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN104756249B
CN104756249B CN201480002586.3A CN201480002586A CN104756249B CN 104756249 B CN104756249 B CN 104756249B CN 201480002586 A CN201480002586 A CN 201480002586A CN 104756249 B CN104756249 B CN 104756249B
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heat sink
insulating barrier
semiconductor device
sealing resin
bending area
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CN104756249A (zh
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田中淳也
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H01L2924/181—Encapsulation

Abstract

本发明的半导体装置的特征在于，包括：搭载有功率半导体元件(2)的第1基板(1)、散热板(12)、配置在第1基板(1)与散热板(12)之间的绝缘层(11)、以及对第1基板(1)和散热板(12)及绝缘层(11)进行密封的密封树脂(4)，散热板(12)的与绝缘层(12)相反一侧的第1面从密封树脂(4)露出，绝缘层(11)具有向第1面侧弯曲的弯曲区域(11a)，且其端部存在于密封树脂(4)内。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置及半导体装置的制造方法。本发明特别涉及包含有开关元件等功率器件且用于逆变器等功率转换用途的半导体装置。
背景技术
太阳能发电系统的功率调节器、家用电器或EV(电动汽车)用电动机的旋转控制会用到作为半导体装置之一的功率器件。该功率器件的单个封装产品正在增加，其目的是为了减小安装面积、缩短半导体元件之间的距离以提高性能、或减轻用户方的设计负担。单个封装是指将多个功率器件收在一个封装中从而实现模块化。单个封装的产品被称为功率模块。
树脂密封型的功率模块例如使用传递模塑法来进行组装。
例如专利文献1中公开了使用该传递模塑法的半导体装置。图5中示出了专利文献1所涉及的现有半导体装置100的简要剖视图。
在图5所示的半导体装置100中，2个功率半导体元件103a、103b通过接合材料102而接合在引线框101上。
功率半导体元件103b与另一功率半导体元件103a或引线框101使用例如由Al构成的接合线104实现电连接。该半导体装置100还具有从密封树脂106露出来的散热板105。
为了使流过电流的引线框101和散热板105之间电绝缘，在两者之间形成绝缘层107。该绝缘层107使用填充了陶瓷填料的环氧树脂制的绝缘片材。
若是例如家庭用的功率调节器，则引线框101与散热板105之间所要求的绝缘耐压为2.5KV。此时，绝缘层107的厚度设定为例如0.15～0.3mm。
另外，还要求半导体装置100自身小型化。为此，提出了使引线框101与散热板105的尺寸基本相同来减小半导体装置100的技术方案。然而，在引线框101与散热板105的尺寸基本相同的情况下，若密封树脂106的内部存在空气层108(参照图6(a)、图6(b))，则可能导致绝缘耐压变差。
关于这一点，利用图6(a)、图6(b)来进行说明。
图6(a)、图6(b)是半导体装置的内部剖视图，是表示引线框101、散热板105和绝缘层107的配置关系的简要剖视图。图6(a)表示引线框101与散热板105尺寸相同的情况。图6(b)表示散热板105比引线框101要大的情况。图6(a)是表示散热板105的边缘附近存在有空气层108的情况的图。该空气层108是例如在密封工序中因树脂流动而产生的空隙等。由于控制空隙的产生位置、大小是十分困难的，因此可能如图6(a)那样导致引线框101的边缘与散热板105的边缘通过空气层108相连。由于空气的绝缘耐压约为3KV/mm左右，因此在施加2.5KV电压的情况下，该空气层108所在的位置会发生绝缘破坏，从而可能导致有电流从引线框101流入散热板105。在使用时，散热板105一般安装到Al散热器等，但如果发生了绝缘破坏，电流就很有可能流到Al散热器中。
因此，专利文献1的半导体装置101中，如图6(b)所示，通过使引线框101与散热板105的边缘隔开配置，从而即使存在空气层108，也能利用物理上的距离来确保绝缘可靠性。
另外，专利文献2中，如图7所示，公开了如下半导体装置201：使用被绝缘覆盖部202所覆盖的散热板203和载放了器件205的连接端子204，并将该散热板203与连接端子204相连接。专利文献2的半导体装置201中，散热板203的边缘部分被绝缘覆盖部202所覆盖，因此即使产生例如前文所述的空气层108，也能够确保绝缘可靠性。
现有技术文献
专利文献
专利文献1：日本专利第4146785号公报
专利文献2：日本专利第4732789号公报
发明内容
发明所要解决的技术问题
然而，在专利文献1的结构中，必须使散热板105大于引线框101，从而难以实现半导体装置100的小型化。而专利文献2的结构中，需要预先用绝缘覆盖部202覆盖散热板203，因此有时在制造上较为困难。
本发明是为了解决上述问题而完成的，其目的在于提供一种制造容易且能实现小型化的半导体装置。
解决技术问题所采用的技术方案
本发明的半导体装置的特征在于，包括：搭载有半导体元件的第1基板、散热板、配置在所述第1基板与所述散热板之间的绝缘层、以及对所述第1基板和所述散热板及所述绝缘层进行密封的密封树脂，所述散热板的与所述绝缘层相反一侧的第1面从所述密封树脂露出，所述绝缘层具有向所述第1面侧弯曲的弯曲区域，且其端部存在于所述密封树脂内。
本发明的半导体装置的制造方法的特征在于，将搭载有半导体元件的第1基板、绝缘层和散热板以所述绝缘层的弯曲区域从所述散热板伸出的状态配置在模具内，并向所述模具内注入密封树脂，在所述绝缘层的弯曲区域向所述散热板的与所述绝缘层相反一侧的第1面侧弯曲的状态下，使所述密封树脂固化。
发明效果
根据本发明的半导体装置，能够容易地制造，并能实现半导体装置的小型化。
附图说明
图1(a)是表示本发明的实施方式1的半导体装置的内部俯视图，图1(b)是表示半导体装置的内部剖视图。
图2是表示本发明的实施方式1的半导体装置的电路图。
图3(a)～(e)是表示本发明的实施方式1的半导体装置的制造工序的概要图。
图4是表示本发明的实施方式2的半导体装置的内部剖视图。
图5是表示现有半导体装置的简要剖视图。
图6(a)是表示专利文献1的半导体装置中引线框与散热板具有相同尺寸时的简要剖视图，图6(b)是表示专利文献1的半导体装置中散热板大于引线框时的简要剖视图。
图7是专利文献2的半导体装置的简要剖视图。
具体实施方式
下面，基于图1～图4，对本发明的各实施方式进行说明。
在本说明书的实施方式中，对二合一(2in1)模块进行说明。二合一模块是指在一个模块内内置有作为逆变器基本结构单元的1条臂的2个晶体管。
(实施方式1)
图1(a)是本发明的实施方式1的半导体装置的内部俯视图，图1(b)是其内部剖视图。半导体装置例如是功率模块。功率模块中搭载有多个功率半导体元件。功率半导体元件是半导体元件的一个例子，例如为进行开关的IGBT(Insulated Gate BipolarTransistor：绝缘栅双极型晶体管)、MOSFET(Metal-Oxide-Semiconductor Field EffectTransistor：金属氧化物半导体场效应晶体管)。
本实施方式1的半导体装置的引线框1上，通过接合材料10而搭载有多个功率半导体元件2。引线框1是第1基板的一个例子。引线框1的材质为例如Cu或Cu类合金。接合材料10从散热性的观点出发，为例如Sn-Ag-Cu焊料。本实施方式1的半导体装置中，功率半导体元件2是2个IGBT2a与2个FWD(Free Wheeling Diode:续流二极管)2b。引线框1和IGBT2a、FWD2b各自的电极分别通过接合线3(3a、3b)而连接。连接IGBT2a与FWD2b的接合线3a是例如为左右的铝线。由于通常IGBT2a的表面电极为发射极，FWD2b的表面电极为阳极，因此将IGBT2a与FWD2b反向并联连接。此时，IGBT2a的集电极与FWD2b的阴极为背面电极。此外，在IGBT2a的表面除了发射极之外，还存在栅极电极。该栅极电极与引线框1通过接合线3b连接。由于栅极驱动时使用的电流相比于电力线非常小，因此接合线3b为例如左右的铝线。另外，在本实施方式1的半导体装置中，引线框1、功率半导体元件2、接合线3都被密封树脂4覆盖。而正极侧功率端子5、负极侧功率端子6、输出侧功率端子7、正极侧控制端子8、负极侧控制端子9从密封树脂4露出以与外部进行连接。密封树脂4的材料使用例如适合用于传递模塑的环氧树脂。
在引线框1下，隔着绝缘层11而配置有散热板12。绝缘层11可以使用例如绝缘片材。散热板12是第2基板的一个例子。绝缘层11由具有绝缘性及粘接性的环氧树脂和热传导用的陶瓷填料混合而成。陶瓷填料的材料例如使用BN(氮化硼)时，由于其热传导性要高于氧化铝等，因此从热传导性的观点来看是优选的。散热板12的材质例如与引线框1的一样，为Cu或Cu类合金，为了提高热传导率，杂质越少越好。散热板12的与绝缘层11粘接的面相反一侧的面(第1面)从密封树脂4露出。
本实施方式1的半导体装置的特征之一在于，如图1(a)所示，构成为在与规定的2条边相对的位置上，配置有绝缘层11的弯曲区域11a。规定的2条边是指四边形散热板12的与引线框1之间存在间隙的2条边，图1(a)中为散热板12的左右2条边。具体将在后面描述，本实施方式1的半导体装置中，通过在与这规定的2条边相对的位置上配置绝缘层11的弯曲区域11a，能够降低发生绝缘破坏的可能性。
另外，本实施方式1的半导体装置中，如图1(a)所示，在正极侧功率端子5的基端形成有孔15a，在输出侧功率端子7的基端形成有孔15b。正极侧功率端子5的基端是正极侧功率端子5从引线框1引出的部分。输出侧功率端子7的基端是输出侧功率端子7从引线框1引出的部分。
正极侧功率端子5的基端的宽度与输出侧功率端子7的基端的宽度要大于正极侧功率端子5的前端的宽度与输出侧功率端子7的前端的宽度，从而使得电流流路的截面积不会因孔15a、15b的形成而不足。
图1(a)、(b)中图示的正极侧控制端子8和负极侧控制端子9各有2个，但其数量并不限于此，可以根据功率半导体元件2的功能来变动端子数。
图2是采用上述说明的结构的本发明实施方式1的电路图，采用的是将IGBT2a和FWD2b作为一对，串联连接两对而成的结构。图2所示的电路图构成逆变器的1条臂。将FWD2b反向并联连接是为了防止因连接成使得IGBT2a进行开关动作时的过电压所产生的反向恢复电流通过FWD2b而导致IGBT2a破坏。例如，将具有上述电路结构的3个半导体装置组合起来，能够形成三相交流用逆变器电路，从而能够用于控制电动机旋转的用途等。
接下来，对于在本实施方式1的半导体装置中能够通过在与规定的2条边相对的位置上配置绝缘层11的弯曲区域11a来降低发生绝缘破坏的可能性的情况进行说明。
IGBT2a所产生的热量依次传递至接合材料10、引线框1、绝缘层11、散热板12，并通过从密封树脂4露出的散热板12的面而释放至外部。
本实施方式1的作为绝缘层11一部分的弯曲区域11a如图1(b)所示，沿着散热板12的侧面向下侧(散热板12侧)弯曲而配置。由此，在本实施方式1的半导体装置中，散热板12的边缘12a被绝缘层11覆盖。因此，即使在填充密封树脂4时产生了空气层(空隙)，引线框1与散热板12的边缘12a之间除了空气层以外还存在有绝缘层11，从而不容易发生绝缘破坏。这里，散热板12的边缘12a是指散热板12在绝缘层11侧的角。
从弯曲点向散热板12侧延伸的弯曲区域11a的距离取决于散热板12的厚度12b，优选为绝缘层11的端部不会从密封树脂4露出的距离。即，本实施方式1的绝缘层11具有弯曲区域11a，但其端部存在于密封树脂4内。这是因为，当绝缘层11的端部露出在外部时，绝缘层11就会成为水分的浸透口，从而有可能导致绝缘层11所具有的绝缘耐压因吸湿而发生劣化。发明人通过实验了解到，弯曲区域11a向散热板12的第1面侧延伸的延伸距离例如只要是在散热板12的厚度12b的1/2以上且2/3以下的长度即可。具体而言，例如，若散热板12的厚度为2mm，则弯曲区域11a向散热板12侧延伸的延伸距离为1mm～1.3mm。另外，在本实施方式1中，弯曲区域11a构成为紧贴散热板12的侧面。若是该结构，则能够降低穿过球状的空气层而使得引线框1与散热板12因空气层相连的可能性。
此外，在本实施方式1中，散热板12的规定的2条边的边缘12a如图1(b)所示，形成为R形(圆头锥形)。散热板12的规定的2条边的边缘12a是图1(a)的左右2条边靠近引线框1的一侧。散热板12的R形例如在使用模具进行冲压加工，散热板12使用的是Cu，且厚度12b为2mm的情况下，形成0.1mm左右的R形。这里，冲压加工中的冲模(die)和冲孔的间隙设定为散热板12的厚度12b的5％左右。通过将由此形成的散热板12的R形与绝缘层11接触，能够容易地使柔软性较差的绝缘层11弯曲。
图3(a)～图3(e)表示该半导体装置的制造工序。
图3(a)中示出实施了将功率半导体元件2搭载到引线框1上的芯片接合(diebonding)工序，并进一步实施了利用接合线3将功率半导体元件2与引线框1相连接的引线接合工序后的状态。图3(b)中示出在密封模具13内设置粘贴了绝缘层11的散热板12与引线框1的工序。图3(c)(d)中示出在密封工序中填充密封树脂4的中间过程。图3(e)中示出密封树脂4的填充完成后的状态。这里，密封模具13由下模具13a和上模具13b构成。
如前所述，本实施方式1的绝缘层11以环氧树脂为主材料，因此其热传导率在从半导体装置的功率半导体元件2起的散热路径中是最低的。因此，在本实施方式1中，为了提高散热性，在绝缘层11中高密度地填充陶瓷填料。陶瓷填料使用例如氧化铝(Al2O3)或BN填料。
这里，当在绝缘层11中高密度地填充陶瓷填料时，与单独使用环氧树脂的情况相比，绝缘层11的柔软性变差，因此在预先弯曲绝缘层11的情况下，绝缘层11有可能发生断裂。因此，发明人通过各种实验，找到了无需增加新的工序就能将高密度地填充了陶瓷填料的绝缘层11弯曲的制造方法。该制造方法是利用密封工序中使用的模具的热量所引起的模具温度、以及传递模塑法中密封树脂的流动所产生的应力，使绝缘层11软化，并改变形状而弯曲。这里的模具温度为170℃以上且180℃以下，是能够使固化反应前的密封树脂4软化从而呈现出流动性的温度。
如图3(b)(c)(d)所示，从散热板12伸出并向散热板12的外侧伸展的绝缘层11的弯曲区域11a的下方没有受到散热板12的支撑，因此，在因模具温度而软化的状态下从上面流动下来的密封树脂4的自重所产生的应力会使其变形(弯曲)。本实施方式1中，通过利用密封树脂4的自重，无需增加新的工序，就能使绝缘层11的弯曲区域11a向散热板12的厚度方向弯曲。
图3(a)～图3(e)中说明了在密封过程中使弯曲区域11a弯曲的工序，但若即使是增加工序也无碍，则可以在配置密封模具13之前预先使绝缘层11的弯曲区域11a弯曲。
下面，对图3(a)～图3(e)所示的半导体装置的制造工序进行详细说明。
图3(a)的状态由芯片接合工序和引线接合工序构成。
在芯片接合工序中，用接合材料10将IGBT2a与FWD2b接合到引线框1上。这里，在接合材料10使用的是Sn-Ag-Cu焊料等的情况下，若预先在引线框1的接合位置上形成镀Ag，则能提高接合位置的浸润性，从而有助于减少焊料内的空隙，因此在可靠性和散热性方面是优选的。另外，本实施方式1中，为了使接合材料10熔化而对引线框1进行预加热并在达到260℃以上的时刻搭载功率半导体元件2，但由于在大气中焊料很快就会氧化而导致浸润性降低，因此，功率半导体元件2的搭载工序优选在还原气氛下进行。
引线接合工序中，用接合线3将IGBT2a与FWD2b及引线框1电连接。接合线3例如通过加热接合或超声波接合而连接。这里，作为铝线的接合线3虽然能够与作为Cu的引线框1相接合，但Cu的氧化会导致工艺稳定性和可靠性出现问题，因此优选预先对引线框实施镀Ni。与Al的情况相同，镀Ni会牢固地形成作为薄氧化膜的钝化状态，因此不会因加热而发生状态变化，且在超声波振动下能较为容易地破坏钝化状态而露出新生面，因此其接合性优异。
将IGBT2a与引线框1连接的接合线3若无特殊问题，则可以使用与连接IGBT2a和FWD2b及引线框1所用的接合线3相同的接合线。这种情况下，可以减少一道工序，在缩短交付周期方面是优选的。
图3(b)中，在密封模具13内配置散热板12和绝缘层11的层叠体、以及经过了芯片接合工序和引线接合工序之后的引线框1。此时，为了构成弯曲区域11a，绝缘层11的面积比散热板12的面积要大。例如在散热板12的一边为20mm，厚度为2mm的情况下，为了确保弯曲区域11a的宽度有1mm，使用其中一组相对的2条边为22mm而另外2条边为20mm的绝缘层11即可。这里，对散热板12和绝缘层11进行预粘接至不会发生固化反应的程度。散热板12和绝缘层11例如在温度为80℃、压力为1MPa左右的环境下粘接，从而能够预粘接至不会发生剥离的程度。
图3(c)中，下模具13a和上模具13b闭合，夹住引线框1，并注入密封树脂4。本实施方式1中，由于在上模具13b中形成密封树脂4的流动路径即浇道14，因此流入密封模具13内的密封树脂4优先在引线框1的上侧(上模具13b侧)开始流动。特别是像功率模块那样具有散热板12的半导体装置，由于散热板12的存在会导致密封树脂4填充到引线框1的下侧(下模具13a侧)变慢，而通过将浇道14配置在上模具13b中会使该趋势更加明显。这里，由于绝缘层11因密封模具13的热量而处于被软化的状态，因此在密封树脂4从引线框1的上侧流入的情况下，绝缘层11以从上部被按压的方式开始变形。其结果如图3(c)所示，绝缘层11的弯曲区域11a沿着散热板12的侧面(R形)向下侧弯曲。
本实施方式1中，如图1(a)所示，由于在正极侧功率端子5的基端形成有孔15a，因此从浇道14流入的密封树脂4也会从孔15a流入到正极侧功率端子5的基端正下方，从而能够使绝缘层11向下侧弯曲。当流入正极侧功率端子5正下方的密封树脂4较少时，弯曲区域11a向下侧的弯曲量有可能不够，从而导致在正极侧功率端子5的基端的正下方附近发生绝缘层11的破裂。但是，通过像上述那样在正极侧功率端子5的基端形成孔15a，能够使密封树脂4也流入到正极侧功率端子5的基端正下方，从而能使弯曲区域11a均匀地向下侧弯曲。
这一情况对于输出侧功率端子7的基端也是一样的。本实施方式1中，如图1(a)所示，由于在输出侧功率端子7的基端形成有孔15b，因此密封树脂4也会从孔15b流入到输出侧功率端子7的基端正下方，从而能够使弯曲区域11a均匀地向下侧弯曲。
图3(e)中示出了密封模具13的所有空穴都被密封树脂4填充的状态。图3(e)的状态下，通过浇道14流入了密封树脂4而形成的柱塞向绝缘层11施加压力。该压力和密封模具13的热量使得绝缘层11开始反应，从而呈现出绝缘性和散热性。
之后，将从密封树脂4突出的引线框1不要的部分切断或对其进行加工，根据需要对用作为突出端子的引线框1实施Sn等外装镀敷。通过这些工序，可以制造出半导体装置。
在制造得到的半导体装置中，浇道14部分的密封树脂4不再需要，因此将其除去。因此，半导体装置的该部分必然会存在去除密封树脂4之后留下的切痕。即，在本实施方式1的半导体装置中，密封树脂4在夹着引线框1且与绝缘层11、散热板12相反的一侧具有切痕。
如上所述，本实施方式1的半导体装置无需增加工序，就能制造出散热板12的边缘12a被绝缘层11覆盖的结构。因此，本实施方式1的半导体装置能够大幅度地抑制因空隙等空气层的存在而引起的绝缘耐压下降。
另外，本实施方式1的半导体装置中，弯曲区域11a所对应的距离成为绝缘距离，因此若弯曲区域11a例如为1mm，则如前所述能够有效地确保作为空气的物性的3KV左右的绝缘耐压。通过具有弯曲区域11a，即使在空隙以外因密封树脂4从散热板12或绝缘层11剥离而导致引线框1与散热板12经由空气层相连的情况下，也能够确保绝缘耐压。
(实施方式2)
图4是本发明的实施方式2的半导体装置的内部剖视图。
本实施方式2与实施方式1的区别点在于绝缘层11的弯曲区域11a的一部分X不紧贴散热板12的侧面。本实施方式2中，为了使绝缘层11的弯曲区域11a因密封树脂4的自重而弯曲，将弯曲区域11a的一部分X配置成越靠近散热板12从密封树脂4露出的面(图4下侧的面)，就越远离散热板12的侧面。
通过采用这种结构，与绝缘层11和散热板12完全紧贴的情况相比，如图4中的虚线X所示，能够得到没有与散热板12的侧面紧贴的那部分距离来作为绝缘距离。例如，在弯曲区域11a的长度仅为1mm的情况下，也能使绝缘耐压上升3KV左右，因此是有效的。
上述结构能够通过调整密封树脂4的物性来制造。密封树脂4的比重会随着主成分之一的二氧化硅填料的含有量而发生变化。因此，通过相比于实施方式1减小密封树脂4的比重，能够制造出本实施方式2的结构的半导体装置。随着二氧化硅填料的含有量而发生变化的比重的值也会随着环氧树脂的种类发生变化，因此并不是一成不变的，大体的基准是若二氧化硅的含有量变化5％的重量百分比，比重就变化10％。
工业上的实用性
本发明能够在例如传递模塑型的功率模块中抑制半导体装置的绝缘耐压劣化，而无需将散热板增大到所需程度以上。
标号说明
1 引线框
2 功率半导体元件
2a IGBT
2b FWD
3，3a，3b 接合线
4 密封树脂
5 正极侧功率端子
6 负极侧功率端子
7 输出侧功率端子
8 正极侧控制端子
9 负极侧控制端子
10 接合材料
11 绝缘层
11a 弯曲区域
12 散热板
12a 边缘
12b 厚度
13 密封模具
13a 下模具
13b 上模具
14 浇道
15a，15b 孔

Claims (10)

1.一种半导体装置，其特征在于，包括：
搭载有半导体元件的第1基板；
四边形的散热板；
配置在所述第1基板与所述散热板之间的绝缘层；以及
对所述第1基板、所述散热板、及所述绝缘层进行密封的密封树脂，
所述散热板的与所述绝缘层相反一侧的第1面从所述密封树脂露出，
所述绝缘层至少在2处具有向所述第1面侧弯曲的弯曲区域，且该至少2处的端部均存在于所述密封树脂内，
所述绝缘层的2处弯曲区域配置在与所述散热板的与第1基板之间存在间隙的2条边相对的位置上，
所述绝缘层的弯曲区域配置成随着靠近所述第1面而远离所述散热板的侧面。
2.如权利要求1所述的半导体装置，其特征在于，
所述绝缘层的弯曲区域的长度比所述散热板的厚度要短。
3.如权利要求2所述的半导体装置，其特征在于，
所述绝缘层的弯曲区域的长度为所述散热板的厚度的1/2以上且2/3以下。
4.如权利要求1所述的半导体装置，其特征在于，
所述散热板的与所述绝缘层相接一侧的边缘呈R形。
5.如权利要求1所述的半导体装置，其特征在于，
所述散热板的与形成于所述绝缘层的4条边中规定的2条边的所述绝缘层的弯曲区域相接一侧的边缘呈R形。
6.如权利要求1所述的半导体装置，其特征在于，
所述绝缘层的弯曲区域与所述散热板的侧面相接触。
7.如权利要求1所述的半导体装置，其特征在于，
所述密封树脂在夹着所述第1基板而与所述散热板相反的一侧具有切痕。
8.如权利要求1所述的半导体装置，其特征在于，
所述绝缘层由在所述密封树脂的注入温度下发生软化的材料构成。
9.如权利要求1所述的半导体装置，其特征在于，
所述绝缘层由在密封所述密封树脂时所使用的模具的模具温度下发生软化的材料构成。
10.一种半导体装置的制造方法，其特征在于，
将搭载有半导体元件的第1基板、绝缘层和散热板以所述绝缘层的至少2处弯曲区域从所述散热板伸出的状态配置在模具内，
向所述模具内注入密封树脂，利用所述密封树脂的自重所产生的应力使所述弯曲区域弯曲，
在所述绝缘层的至少2处弯曲区域向所述散热板的与所述绝缘层相反一侧的第1面侧弯曲的状态下，使所述密封树脂固化。
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