CN107210289A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN107210289A
CN107210289A CN201580075351.1A CN201580075351A CN107210289A CN 107210289 A CN107210289 A CN 107210289A CN 201580075351 A CN201580075351 A CN 201580075351A CN 107210289 A CN107210289 A CN 107210289A
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CN
China
Prior art keywords
heat sink
insulating trip
lead frame
end regions
sealing resin
Prior art date
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Granted
Application number
CN201580075351.1A
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English (en)
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CN107210289B (zh
Inventor
多田和弘
山本圭
高原万里子
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN107210289A publication Critical patent/CN107210289A/zh
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Publication of CN107210289B publication Critical patent/CN107210289B/zh
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    • H01L23/495—Lead-frames or other flat leads
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

在半导体器件(100)中，散热板(2)被密封于密封树脂(8)内。在密封树脂(8)内以与散热板(2)的一个主表面相接的方式安装有绝缘片(3)。引线框(4)以从密封树脂(8)内到达密封树脂(8)外的方式延伸，并以相接到绝缘片(3)的与散热板(2)相反的一侧的主表面上的方式被载置。半导体元件(1)在密封树脂(8)内被接合到引线框(4)的与绝缘片(3)相反的一侧的主表面的至少一部分。绝缘片(3)的与引线框(4)相接的一侧的表面在绝缘片(3)的包括俯视时的最外端的至少一部分的端部区域中，以从引线框(4)远离的方式具有倾斜地变低。密封树脂(8)在端部区域中进入到引线框(4)与绝缘片(3)之间。引线框(4)至少在密封树脂(8)内是平坦的。

Description

半导体器件
技术领域
本发明涉及半导体器件，特别是涉及安装有功率用半导体元件的半导体器件。
背景技术
近年来，安装有功率用半导体元件的半导体器件处于高性能化以及小型化的倾向，要求比以往更高的散热性能。这样的半导体器件中的功率用半导体元件在与其周围的部件之间确保绝缘性的同时，要求向该周围的部件或者部件的外部的高的散热特性。因此，在这样的半导体器件中，大多使用兼具热传导性和绝缘性的陶瓷基板。但是，陶瓷基板存在易碎而加工性差这样的缺点。
另一方面，最近在要求散热特性的半导体器件中，经常使用绝缘片。绝缘片是例如在树脂中填充由陶瓷颗粒构成的无机粉末填充材料而得到的。例如在国际公开第2012/073306号(专利文献1)的功率模块中，以覆盖散热板的上表面的方式配置的绝缘片在确保引线框与散热板之间的电气性的绝缘性的同时，提高从引线框向散热板的热传导效率。
而且，国际公开第2012/073306号的功率模块具有利用环氧树脂将功率用半导体元件、散热板、绝缘片等密封的结构。另外，在该功率模块中，引线框的厚度在其正上载置功率用半导体元件的区域和其以外的用于与外部电连接的区域之间是不同的。通过使用这样的在区域之间厚度不同的引线框，从而能够将引线框与散热板之间的例如沿着散热板的表面的方向的距离即所谓沿面距离确保得较长，由此能够进一步提高引线框与散热板之间的电气性的绝缘性。
现有技术文献
专利文献1：国际公开第2012/073306号
发明内容
国际公开第2012/073306号所公开的在区域之间厚度不同的引线框如上所述能够提高散热性和绝缘性，但存在其制造成本高涨这样的问题。对此，例如在整体上厚度大致恒定但以使延伸方向变更的方式进行了弯曲加工的样式的引线框在其设置时易于抖动而变得不稳定，所以存在如下问题：为了控制位置而准备夹具等，所需的工序增加。另外，如果使用整体平坦的(未进行弯曲加工的)样式的引线框，则无法确保其与散热板之间的沿面距离，两者之间的绝缘性有可能降低。
本发明是鉴于上述课题而完成的，其目的在于提供一种不会使制造成本高涨而能够确保引线框与散热板之间的绝缘性以及散热特性这双方的半导体器件。
本发明的半导体器件具备密封树脂、散热板、绝缘片、引线框以及半导体元件。散热板被密封于密封树脂内。在密封树脂内以与散热板的一个主表面相接的方式安装有绝缘片。引线框以从密封树脂内到达密封树脂外的方式延伸，并以相接到绝缘片的与散热板相反的一侧的主表面上的方式被载置。半导体元件在密封树脂内接合到引线框的与绝缘片相反的一侧的主表面的至少一部分。绝缘片的与引线框相接的一侧的表面在绝缘片的包括俯视时的最外端的至少一部分的端部区域中，以从引线框远离的方式具有倾斜地变低。密封树脂在端部区域中进入到引线框与绝缘片之间。引线框至少在密封树脂内是平坦的。
根据本发明，引线框平坦，所以不需要弯曲加工等。另外，安装于散热板的绝缘片的端部区域具有以从引线框远离的方式变低的样式。因此，不会使制造成本高涨而能够确保引线框与散热板之间的绝缘性以及散热特性这双方。
附图说明
图1是示出实施方式1的功率用半导体器件的结构的概要剖面图。
图2是示出实施方式1中的图1的用虚线包围的区域II中的散热板的形状以及尺寸的概要放大剖面图(A)以及示出实施方式1中的图1的用虚线包围的区域II中的散热板以及绝缘片的形状以及尺寸的概要放大剖面图(B)。
图3是示出在实施方式1的散热板以及绝缘片中形成作为端部区域的C面的样式的第1例的概要俯视图(A)、示出在实施方式1的散热板以及绝缘片中形成作为端部区域的C面的样式的第2例的概要俯视图(B)以及示出在实施方式1的散热板以及绝缘片中形成作为端部区域的C面的样式的第3例的概要俯视图(C)。
图4是示出实施方式1的功率用半导体器件的制造方法的第1工序的概要剖面图。
图5是示出实施方式1的功率用半导体器件的制造方法的第2工序的概要剖面图。
图6是示出实施方式1的功率用半导体器件的制造方法的第3工序的概要剖面图。
图7是示出实施方式1的功率用半导体器件的制造方法的第4工序的概要剖面图。
图8是示出实施方式1的功率用半导体器件的制造方法的第5工序的概要剖面图。
图9是示出实施方式1的功率用半导体器件的制造方法的第6工序的概要剖面图。
图10是示出图6所示的在散热板安装有绝缘片的结构的制造方法的第1工序的概要剖面图。
图11是示出图6所示的在散热板安装有绝缘片的结构的制造方法的第2工序的概要剖面图。
图12是示出图6所示的在散热板安装有绝缘片的结构的制造方法的第3工序的概要剖面图。
图13是示出比较例的功率用半导体器件的结构的概要剖面图。
图14是示出实施方式2中的与图1的用虚线包围的区域II相当的区域中的散热板的形状以及尺寸的概要放大剖面图(A)以及示出实施方式2中的与图1的用虚线包围的区域II相当的区域中的散热板以及绝缘片的形状以及尺寸的概要放大剖面图(B)。
图15是示出实施方式3的功率用半导体器件的结构的概要剖面图。
图16是示出实施方式3中的图15的用虚线包围的区域XVI中的散热板以及绝缘片的形状以及尺寸的概要放大剖面图。
图17是示出实施方式3中的在散热板安装有绝缘片的结构的制造方法的第1工序的概要剖面图。
图18是示出实施方式3中的在散热板安装有绝缘片的结构的制造方法的第2工序的概要剖面图。
图19是示出实施方式3中的在散热板安装有绝缘片的结构的制造方法的第3工序的概要剖面图。
图20是示出实施方式3中的在散热板安装有绝缘片的结构的制造方法的第4工序的概要剖面图。
(符号说明)
1：半导体元件；2：散热板；2C、3C：C面；2E、3E：最外端；3：绝缘片；4：引线框；4A：内侧引线框；4B：外侧引线框；5：内部引线；6、6A、6B：接合材料；7：接合线(bonding wire)；8：密封树脂；8A：密封材料平板(sealing material tablet)；9：模具；9A：上侧模具；9B：下侧模具；10：罐(pot)；11：接合用热传导材料；12：散热器；13、15：冲压加工机；13A、15A：冲压下面板(press lower face plate)；13B、15B：冲压上面板(press upper face plate)；14：缓冲片；100、110、150：半导体器件；ER：端部区域。
具体实施方式
以下，根据附图，说明本发明的实施方式。
(实施方式1)
首先，使用图1～图3，说明本实施方式的功率用的半导体器件100的结构。
参照图1，本实施方式的半导体器件100主要具有半导体元件1、散热板2、绝缘片3、引线框4以及内部引线5。
在例如由具有长方体形状的散热板2以及具有平板形状的绝缘片3构成的基座之上，以夹着引线框4进行搭载的方式配置有半导体元件1。反过来说，散热板2是用于将在驱动半导体元件1时发出的热释放到半导体器件100的外部的部件，它配置于半导体元件1之下。
绝缘片3为了使半导体元件1和散热板2以及引线框4和散热板2电气性地绝缘而被夹在它们之间。具体而言，绝缘片3是以与散热板2的一个主表面(图1的上侧的主表面)相接的方式安装的平板状的部件。绝缘片3由于高的绝缘性以及优良的使用性而被用于如功率用的半导体器件100那样要求散热特性的器件。
引线框4是为了将搭载有半导体元件1的半导体器件100的中心部与例如半导体器件100的外部进行电连接而从半导体器件100的中心部向半导体器件100的外侧延伸的导电性的部件。图1的引线框4具有内侧引线框4A和外侧引线框4B。在此，在引线框4之中，将仅配置于半导体器件100的内部(例如仅配置于后述的密封树脂8内，未向半导体器件100的外部延伸)的区域称为内侧引线框4A，将向半导体器件100的外部延伸的区域称为外侧引线框4B。另外，内侧引线框4A和外侧引线框4B也可以成为一体(参照后述的图3)。例如，图1的右侧的引线框4具备内侧引线框4A和外侧引线框4B这双方(在图1中将其表示为“4B(4A)”)。
基本上以与绝缘片3的和与散热板2相接的一侧的主表面相反的一侧的主表面(上侧的主表面)相接的方式载置有引线框4。另外，在该引线框4的和与绝缘片3相接的一侧的主表面相反的一侧的主表面(上侧的主表面)上的至少一部分，通过接合材料6A接合有半导体元件1。
内部引线5具有与引线框4同样的样式，但它是用于将多个半导体元件1之间进行电连接的导电性的部件。内部引线5通过接合材料6B而接合到半导体元件1的和与引线框4相向的一侧的主表面相反的一侧的主表面(上侧的主表面)上的至少一部分。在此，将接合材料6A和接合材料6B总称为接合材料6。
半导体元件1与引线框4也可以通过接合材料6A相互电连接，但它们也可以通过接合线7相互电连接。例如，在图1中，左侧的半导体元件1与左侧的外侧引线框4B通过接合线7连接。
以覆盖以上叙述的各部件的方式，利用密封树脂8密封其大致整体。即，半导体元件1、散热板2、绝缘片3、内侧引线框4A、内部引线5、接合线7的表面的大致整体全都被密封树脂8覆盖。但是，以朝向外侧的方式延伸的外侧引线框4B仅一部分(内侧的区域)被密封树脂8覆盖，其它部分(特别是外侧的区域)未被密封树脂8覆盖。由此，外侧引线框4B的该部分能够与半导体器件100的外侧电连接。
密封树脂8通过覆盖半导体元件1的周围，能够提高热循环试验、功率循环试验、耐湿可靠性试验的各种试验的可靠性。
参照图1以及图2(A)，在本实施方式中，在散热板2的包括俯视时的最外端2E(最外缘的部分)的至少一部分的端部区域ER中，相比于散热板2的端部区域ER以外的(俯视时的内侧的)区域，其最上表面以配置于和与绝缘片3相接的一侧相反的一侧(下侧)的方式变低。此外，在此端部区域ER不限于例如图1以及图2(A)的作为与左右方向有关的1点(最外缘的部分)的最外端2E自身，还包括与该最外端2E非常近的区域。
具体而言，散热板2的最上表面为在端部区域ER中形成C面2C(倾斜的平面)的样式。由此，端部区域ER中的散热板2相比于其它区域，其厚度变薄，并且其最上表面的高度变低。散热板2在端部区域ER中具有C面2C，所以随着接近最外端2E，从引线框4(4B)向下方远离的量单调地变大。
参照图2(A)，在图1的端部区域ER中的散热板2的C面2C中，沿着其一个主表面的方向(图2的左右方向)的尺寸a是0.5mm以上且2.0mm以下。另外，图1的端部区域ER中的散热板2的C面2C的、散热板2的最上表面比端部区域ER以外的区域变低的最大值b是0.025mm以上且0.25mm以下。在C面2C中，相比于C面2C以外的区域，在其最外端2E处最低。
参照图1以及图2(B)，散热板2的上表面上的绝缘片3基本上在其整体中具有大致均匀的厚度t。因此，为了使散热板2追随如上所述在端部区域ER中变低的区域，绝缘片3的与引线框4(4B)相接的一侧(上侧)的表面在包括其俯视时的最外端3E(最外缘的部分)的一部分的端部区域ER中以从引线框4(4B)向下方远离的方式具有倾斜地变低。
具体而言，绝缘片3的最上表面为在端部区域ER中形成C面3C(倾斜的平面)的样式，由此端部区域ER中的绝缘片3相比于其它区域，其厚度变薄，并且其最上表面的高度变低。绝缘片3在端部区域ER中具有C面3C，所以随着接近最外端3E，从引线框4(4B)向下方远离的量单调地变大。
此外，在此散热板2的最外端2E与绝缘片3的最外端3E在俯视时大致重叠，因此散热板2的形成有C面2C的端部区域ER与绝缘片3的形成有C面3C的端部区域ER成为相同的区域。在俯视时散热板2的最外端2E与绝缘片3的最外端3E大致重叠，从而将绝缘片3粘贴到散热板2时的对位变得容易。假设绝缘片3在俯视时大于散热板2，则有时在将绝缘片3安装到散热板2之后的处理作业中发生绝缘片3的缺损，在绝缘性的确保中发生问题。
参照图2(B)，图1的端部区域ER中的绝缘片3的C面3C的沿着其与引线框4相接的上侧的表面的方向(图2的左右方向)的尺寸a与散热板2的尺寸a同样地是0.5mm以上且2.0mm以下。另外，图2的端部区域ER中的绝缘片3的C面3C的、绝缘片3的最上表面比端部区域ER以外的区域变低的最大值b是0.025mm以上且0.25mm以下。C面3C在其最外端3E处相比于C面3C以外的区域变得最低。这是因为绝缘片3的厚度在整体中大致恒定，所以是以追随散热板2的C面2C的形状的方式在其正上形成绝缘片3的C面3C的结果。
随着散热板2的上述a的值变大，被引线框4与散热板2夹着的区域中的密封树脂8的绝缘沿面距离变长。在此，绝缘沿面距离是指被引线框4与散热板2夹着的绝缘性的区域的特别是沿着绝缘片3的表面的长度。
从这个观点出发，散热板2的a的值优选为大，但在a的值变得极其大时，在端部区域ER中被引线框4与散热板2夹着的密封树脂8的量变多。密封树脂8由于热传导性低，所以存在从引线框4向散热板2的散热性降低的可能性。从这个观点出发，散热板2的a的值优选为小。如果考虑以上内容，则散热板2的值如上所述优选为0.5mm以上且2.0mm以下。
而且，假设C面2C、3C被形成为与半导体元件1的一部分重叠，则存在在该重叠的部分中通过散热板2对半导体元件1的热进行散热的效果减弱的可能性。从抑制这样的问题来确保散热性的观点出发，C面2C、3C优选为(仅)形成于在俯视时载置半导体元件1的区域的外侧。
另外，随着散热板2的上述b的值变长，被引线框4与散热板2夹着的区域中的密封树脂8的绝缘沿面距离变长。从这个观点出发，散热板2的b的值优选为大，但在b的值变得极其大时，存在由于C面2C向下方大幅下垂而其正上的绝缘片3针对散热板2的紧贴性降低的可能性。如果散热板2和绝缘片3的紧贴性降低，则在处理散热板2时绝缘片3有可能破损。从这个观点出发，散热板2的b的值优选为小。
另外，在散热板2的端部区域ER中，安装于其上的绝缘片3需要吸收C面2C的阶梯差而以足够的强度紧贴到散热板2，为此更优选为散热板2的上述b的值是绝缘片3的厚度t的一半程度。如后所述，绝缘片3的厚度t优选为0.05mm以上且0.5mm以下，所以如果考虑以上全部内容，则优选为散热板2的上述b的值如上所述是0.025mm以上且0.25mm以下。
另外，在假设散热板2的上述b的值比0.025mm小时，利用绝缘片3来确保引线框4与散热板2之间的绝缘性的效果变小，在上述b的值比0.25mm大时，利用散热板2从引线框4、半导体元件1等进行散热的散热特性降低。从这个观点出发，也优选为散热板2的上述b的值如上所述是0.025mm以上且0.25mm以下。
在散热板2的端部区域ER，设置有1.25％以上且50％以下的倾斜梯度。此处的倾斜梯度表示将b的值除以a的值而得到的值的百分比。通过对散热板2的端部区域ER设置这个范围的倾斜梯度，能够将绝缘片3容易地安装到散热板2。假设倾斜梯度超过50％，则在将绝缘片3安装于散热板2时有可能发生由绝缘片3的破损或者缺损所致的损伤而损害其绝缘性。另一方面，假设倾斜梯度小于1.25％，则密封树脂8不会进入到绝缘片3与引线框4之间的间隙。如果密封树脂8不进入到绝缘片3与引线框4之间，则无法延长绝缘沿面距离。
参照图3(A)，引线框4中的例如被密封树脂8完全覆盖的内侧引线框4A具有在俯视时纵和横的长度没有大的差(比较接近正方形)的矩形形状。相对于此，至少部分地向密封树脂8的外侧突出的外侧引线框4B具有在俯视时为棒状的形状，其以在俯视时与最外端2E、3E交叉(正交)的方式向半导体器件100的外侧延伸。
如图3(A)所示，端部区域ER中的C面2C以及C面3C也可以形成于散热板2以及绝缘片3的俯视时的外周(最外端2E、3E)的整体。但是，也可以参照图3(B)，例如仅在散热板2以及绝缘片3的矩形的平面形状的4个最外端的面(4个面)中的与外侧引线框4B交叉的面形成C面2C以及C面3C。另外，也可以参照图3(C)，例如仅在散热板2以及绝缘片3的矩形的平面形状的最外端的面中的与外侧引线框4B交叉的部分及其附近形成C面2C以及C面3C。
在如图3(A)所示在全周形成变低的部分的情况下，不存在散热板2以及绝缘片3的方向性，所以在制造时无需考虑方向而制造变得容易。另一方面，在如图3(C)所示仅在一部分中形成变低的部分的情况下，进行使端部变薄的加工的部分变少，所以能够降低加工成本。
总之，在本实施方式中，在散热板2以及绝缘片3的俯视时的外周(最外端2E、3E)的至少一部分中形成有C面2C、3C，特别是以使至少外侧引线框4B包括横切最外端2E、3E的部分的方式在包括该最外端2E、3E的端部区域中形成有C面2C、3C。
再次参照图1，在本实施方式中为如下样式：在散热板2的端部区域ER中，密封树脂8以陷入的方式进入到绝缘片3的C面3C与其正上的引线框4(4B)之间。即，绝缘片3的端部区域ER中的最上表面3C和其正上的引线框4的下表面被密封树脂8大致完全地覆盖。
另外，在本实施方式中，引线框4(4A、4B)在其整体中是平坦的。即，该引线框4例如不进行弯曲加工，其结果，不具有显著的弯曲部(关于延伸方向，直角地弯曲的部分等)等。更具体而言，该引线框4的最上表面在其整体中，图1的与上下方向有关的位置(坐标)的变化(偏差)是例如0.1mm以下。
接下来，详细说明上述各部件的材质、尺寸等。
半导体元件1是搭载有例如IGBT(Insulated Gate Bipolar Transistor，绝缘栅双极晶体管)那样的元件、和MOSFET(Metal Oxide Semiconductor Field-EffectTransistor，金属氧化物半导体场效应晶体管)那样的开关元件及二极管那样的整流元件的芯片状的部件。IGBT是使大电流流过而驱动的元件，所以半导体元件1作为功率用半导体元件驱动，搭载该半导体元件1的半导体器件100是所谓的功率模块。
构成半导体元件1的半导体芯片优选为例如由硅(Si)形成。但是，半导体元件1的半导体芯片除了硅以外，更优选为例如由从包括碳化硅(SiC)、氮化镓系材料(例如氮化镓(GaN))、金刚石的群中选择的任意材料形成。它们是带隙比硅宽的所谓的宽带隙半导体材料。使用这样的宽带隙半导体材料形成的半导体元件1能够应用于通过使大电流流过IGBT等所搭载的元件而在高温下实施的动作。此外，在图1中，相互隔开间隔而配置有2个半导体元件1，但不限定于此，半导体元件1的配置数量可以是任意的(即，也可以仅配置1个半导体元件1或者配置3个以上的半导体元件1)。
散热板2优选为由从包括热传导率高的铜、铝、铜或铝的合金、铜或铝的复合体(complex)的群中选择的任意材料形成。作为铜或铝的合金，例如使用铜和钼的合金。作为铜或铝的复合体，例如使用铝和碳化硅的复合体。
散热板2的厚度未特别限定，但优选为例如1mm以上且5mm以下。如果散热板2形成得厚则热容量大，并且能够使热扩散并释放，所以能够提高散热性。具体而言，在散热板2的厚度是1mm以上的情况下，热的扩散变得更大，能够进一步提高散热性能。另外，如果散热板2的厚度是5mm以下，则散热板2的加工性变得更加良好(加工变得更容易)，能够将制造成本进一步抑制得较低。通过对具有某个厚度的金属板进行冲压模具加工，散热板2被加工成期望的尺寸。如果进行冲压模具加工，则在散热板2的端部区域ER中产生下垂面。在本实施方式中，通过有效地利用该下垂面来形成C面2C。
绝缘片3具有在环氧树脂等热硬化性树脂中含有热传导性高(陶瓷颗粒)的无机粉末填充材料的结构。另外，在后面详述的密封树脂8也使用在环氧树脂等热硬化性树脂中填充陶瓷颗粒的无机粉末填充材料而得到的部件。例如，在使用在环氧树脂中填充无机粉末填充材料而成的部件作为绝缘片3、并且密封树脂8也使用在环氧树脂中填充无机粉末填充材料而成的部件时，绝缘片3与密封树脂8的界面通过相同的环氧树脂彼此相互反应，能够形成坚固的界面。
绝缘片3需要具有高的散热性能，为了提高散热性，有效的是使用热传导性高的无机粉末填充材料。具体而言，例如在绝缘片3中能够使用晶体二氧化硅、氧化铝、氮化硅、氮化硼、氮化铝等绝缘性且热传导性高的无机粉末填充材料。
绝缘片3的厚度t优选为0.05mm以上且0.5mm以下。使用于绝缘片3的无机粉末填充材料经常使用其最大粒径是0.05mm以上且0.15mm以下的材料。在此，无机粉末填充材料的最大粒径表示在无机粉末填充材料的内部所划出的直线的尺寸(无机粉末填充材料的投影中的其内部的直线状的尺寸)的最大值。因此，如果绝缘片3比0.05mm薄，则由于比此处包含的无机粉末填充材料的最大粒径还薄，所以有时绝缘片3的绝缘性显著地降低。另一方面，在绝缘片3比0.5mm厚的情况下，虽然绝缘性好但热阻变大，有时散热性能降低。从以上的观点出发，绝缘片3的厚度t优选为0.05mm以上且0.5mm以下。此外，绝缘片3无需是由单一的层构成的结构，绝缘片3也可以是例如层叠热传导率相互不同的多个层而成的结构。
另外，如上所述，以树脂材料为基础而形成绝缘片3。因此，相比于例如绝缘片3由作为通常的半导体器件的基板而使用的陶瓷材料形成的情况，绝缘片3与密封树脂8及散热板2的线膨胀系数的差变小。因此，相比于绝缘片3是陶瓷材料的情况，能够抑制由热循环所致的绝缘片3的树脂破裂、界面剥离。
而且，以树脂材料为基础的绝缘片3还具有作为粘接剂的功能。因此，在后述的半导体器件100的密封工序中进行的热硬化时，以与引线框4、散热板2以及密封树脂8相互紧贴的方式粘接绝缘片3。因此，绝缘片3无需在其一个以及另一个主表面上涂覆用于与引线框4、散热板2以及密封树脂8相互粘接的粘接剂。该粘接剂成为热阻上升的原因，所以通过不涂覆该粘接剂，能够抑制绝缘片3与引线框4、散热板2以及密封树脂8之间的热阻的增加，能够得到散热性能高的半导体器件100。
接下来，引线框4以及内部引线5都优选为例如由从包括铜、铁、铜合金、铁合金的群中选择的任意材料形成。在它们之中，特别是优选使用铜或者铜合金，通过使用它们，能够成为使引线框4以及内部引线5的热传导性以及电传导性特别优良的结构。另外，关于引线框4以及内部引线5，也可以在由上述铜等形成的基材的表面通过镀敷来形成镍、银、镍钯金等的薄膜。由此，能够抑制该基材的氧化，并且使该基材与接合线7的接合状态变得更良好。
接合材料6中的将引线框4与半导体元件1进行连接的接合材料6A优选为从包括焊锡、以银为主成分的烧结性填料、以银为主成分的焊料、在锡中分散有铜的材料、以金为主成分的金锡、金锗等金系合金的群中选择的任意材料。它们是热传导性高且导电性高的接合材料。
另外，接合材料6中的将多个半导体元件1彼此利用内部引线5来连接的接合材料6B优选为从包括焊锡、以银为主成分的烧结性填料、以银为主成分的焊料、在锡中分散有铜的材料的群中选择的任意材料。它们是导电性高的接合材料。
接合线7优选为从包括铝、铜、金、银、以这些金属为主成分的合金的群中选择的任意材料。
作为密封树脂8，使用通过向环氧树脂等热硬化性树脂中混入熔融二氧化硅、晶体二氧化硅、氧化铝、氮化硅等无机粉末填充材料而调整了热膨胀系数以及弹性模量的材料。在它们之中，作为密封树脂8，特别是优选将熔融二氧化硅用作填充材料。对于密封树脂8不要求热传导性，所以通过包含热传导性低但热膨胀系数小的熔融二氧化硅，能够使密封树脂8整体的热膨胀系数的调整变得容易。此外，密封树脂8的热传导率是0.7W/mK以上且0.9W/mK以下(比构成半导体器件100的其它各部件的热传导率低)。
接下来，使用图4～图12，说明半导体器件100的制造方法的一个例子。
参照图4，首先在引线框4A、4B的一个(上侧的)主表面上，经由接合材料6A而相互隔开间隔地接合多个半导体元件1。将这个工序称为芯片接合(die bonding)。在芯片接合中，同时经由接合材料6B利用内部引线5来接合多个半导体元件1彼此。
作为半导体元件1，将多个数量的例如由硅构成且搭载有IGBT的半导体芯片和例如由硅构成且搭载有二极管的半导体芯片相互隔开间隔地接合到引线框4。在此，例如搭载有IGBT的半导体元件1在俯视时其尺寸是10mm×10mm×0.25mm，例如搭载有二极管的半导体元件1在俯视时其尺寸是10mm×8mm×0.25mm。
作为接合材料6A，例如使用不含铅的焊锡材料(锡99.25质量％，铜0.75质量％)，在平坦(与厚度方向有关的坐标的变化(偏差)在整体上是0.1mm以下)且对其整个面实施了非电解镀镍的铜制的引线框4的期望的位置，接合固定半导体元件1。另外，在半导体元件1的和与引线框4接合的一侧相反的一侧(上侧)的主表面，虽然未图示，但部分地实施了镍金镀敷。多个半导体元件1的镍金镀敷的部分通过例如作为不含铅的焊锡材料(锡99.25质量％，铜0.75质量％)的接合材料6B而与内部引线5(厚度0.6mm)电连接。由此，多个半导体元件1彼此经由内部引线5相互电连接。使用焊锡回流装置，一并实施半导体元件1的下表面处的使用了接合材料6A的接合以及半导体元件1的上表面处的使用了接合材料6B的接合。
参照图5，半导体元件1与(作为引线框4的一部分的)外侧引线框4B通过接合线7电连接。将这个工序称为线接合。在此使用的接合线7是例如与其延伸的方向交叉的剖面为直径0.15mm的大致圆形的铝制的线。
参照图6，作为与接合有图5所示的半导体元件1等的部件不同的部件，准备通过在散热板2的一个(上侧的)主表面上载置绝缘片3的状态下对其进行加热以及加压而接合的部件。将在散热板2上对该绝缘片3进行加热以及加压的工序称为冲压工序。在此，准备如下的散热板2：最外端2E(包含最外端2E的端部区域ER)相比于端部区域ER以外的区域，其最上表面朝向下侧变低，从而在端部区域ER中形成有C面2C。在其之上接合厚度恒定的绝缘片3，所以绝缘片3也在端部区域ER中形成C面3C。
作为一个例子，例如准备如下的散热板2：形成有倾斜梯度为10％的C面2C，以使得在最外端2E处相比于端部区域ER以外的区域使其最上表面形成得低0.1mm(图2的尺寸b是0.1mm)，并且在从最外端2E起1mm的范围中形成端部区域ER(C面2C)(图2的尺寸a是1mm)。该散热板2例如由无氧铜形成，其俯视时的尺寸是30mm×20mm×3mm。另外，绝缘片3准备热传导率是12W/mK、且厚度是0.2mm的绝缘片。
在散热板2的上侧的主表面上，虽然未图示但载置有硅橡胶片，在该硅橡胶片上载置绝缘片3。即，硅橡胶片被配置成夹在散热板2与绝缘片3之间。硅橡胶片由在绝缘片3熔融的温度以上时具有耐热性和缓冲性的材质形成。在该状态下，从绝缘片3的上方通过冲压工序对绝缘片3以及散热板2进行加压，并且对它们进行加热。例如，在冲压工序时的加热条件中，温度是120℃，压力是3MPa，加热时间是3分钟。此时，绝缘片3未完全硬化，通过加温而再次熔融。
参照图7，接合半导体元件1并且线接合工序完成的引线框4A、4B和冲压工序完成且接合有绝缘片3的散热板2设置于用于进行树脂密封(成型工序)的模具9的内部的期望的位置。此处的模具9是用于通过传递成型工序进行树脂密封的模具，在由上侧模具9A以及下侧模具9B构成的容器状的部件的内部设置上述引线框4以及散热板2，闭合模具9。具体而言，以与绝缘片3接触的方式，在绝缘片3上(散热板2上)载置引线框4。绝缘片3通过在模具9内的高温环境下熔融，从而与引线框4相互粘接。
另外，此时在模具9的外侧，配置有与从模具9的内部通到外部的汽缸连接的罐10。罐10是放置作为用于进行树脂密封的材料的密封材料平板8A的部件。密封材料平板8A是密封用的树脂材料被固化为平板状(tablet状)的形状的材料。
参照图8，在模具9闭合、且图7的密封材料平板8A设置于图7的罐10的状态下，罐10内的密封材料平板8A一般被加压一边被供给到模具9的内部。固态形状的密封材料平板8A通过加热逐渐地熔融而增加流动性的同时，被注入到和汽缸内相连的模具9的上侧模具9A与下侧模具9B之间的区域。作为被注入到模具9内的有流动性的密封材料平板8A的树脂材料通过模具9被进一步加热并固化而成为密封树脂8。通过在模具9内填充密封树脂8，模具9内的半导体元件1以及散热板2等各部件的表面全部被所固化的密封树脂8覆盖。
此时，散热板2的最外端2E的至少一部分的最上表面变低(厚度变薄)。由此，在熔融的密封树脂8被注入到模具9内时，在最外端2E及其附近的端部区域ER中，在引线框4与绝缘片3(散热板2)之间产生间隙，密封树脂8还进入到该间隙。因此，密封树脂8在端部区域ER中也以将引线框4、绝缘片3(散热板2)的表面全都覆盖的方式深入。
此外，在传递成型工序中，为了使密封树脂8以及绝缘片3硬化，例如将模具9内的温度设为180℃，将压力设为10MPa，并将加热时间设为3分钟。但是，关于传递成型工序中的加热时间，能够根据密封树脂8以及绝缘片3的反应性而适当设定任意的时间。
另外，绝缘片3也通过加温而如上所述熔融，并通过该传递成型工序的进一步的加温而热硬化。
参照图9，在密封树脂8被固化之后，从模具9取出由密封树脂8密封的半导体器件100。此外，也可以在从模具9取出半导体器件100之后，为了进一步提高密封树脂8的硬化度而在例如180℃下加热8小时，从而进行进一步的热硬化。
以上，通过传递成型工序供给密封树脂8，但密封树脂8的供给方法不限于此。
接下来，引线框4的不需要部分被切断。将该工序称为连接杆切断(tie barcutting)。另外，向密封树脂8的外侧露出的例如在沿着散热板2的主表面的方向上延伸的外侧引线框4B例如在密封树脂8的外侧以在朝向图9的上侧的方向上延伸的方式弯曲约90°。接下来，在散热板2的与接合有绝缘片3的一个主表面相反的一侧的主表面(下侧的主表面)涂覆接合用热传导材料11，经由该接合用热传导材料11在该相反的一侧的主表面上接合散热器12。由此，成为半导体器件100与散热器12被接合的样式。此外，散热器12是用于将在半导体器件100(半导体元件1等)的驱动时产生的热释放到外部的部件。
接合用热传导材料11优选为具有流动性或者热硬化性。例如，在接合用热传导材料11是硅散热油脂(silicone heat dissipating grease)的情况下，根据所使用的接合用热传导材料11的种类，为了接合半导体器件100与散热器12而施加的负载被适当地最佳化。此外，在接合用热传导材料11是散热性粘接剂的情况下，在对半导体器件100与散热器12之间施加了负载的状态下，在例如125℃下加热30分钟，从而将接合用热传导材料11热硬化，由此接合半导体器件100与散热器12。
此外，半导体器件100和散热器12既可以根据需要通过螺丝紧固来接合、或者也可以通过使用板簧进行压制来接合。
在本实施方式中，既可以将(不具有散热器12的)半导体器件100的样式作为最终的完成品(产品)，也可以将对半导体器件100连接有散热器12的样式(半导体器件110)作为最终的完成品(产品)。
在此，使用图10～图12，特别说明具有变低的部分(C面2C、3C)的散热板2以及绝缘片3的形成方法的一个例子。
参照图10，准备包括最外端2E的端部区域相比于其以外的区域变低而形成有C面2C的散热板2、以及在俯视时与散热板2重叠的(俯视时的形状以及尺寸与散热板2大致相同的)绝缘片3。此外，散热板2的C面2C是通过例如作为其成型时的模具使用成为可形成C面2C的形状的部件、或者使用专用的倒角切割机等切削工具进行切削加工而形成的。关于绝缘片3，在图10中未形成C面3C，包括最外端3E在内在其整个面中厚度为大致恒定(在其整个面中平坦)。然后，绝缘片3以与散热板2重叠的方式安装在散热板2的一个(上侧的)主表面上。
参照图11，在冲压加工机13的冲压下面板13A上的期望的位置，载置图10的散热板2以及绝缘片3。另外，在冲压加工机13的冲压上面板13B的与冲压下面板13A相向的(下侧的)面上，缓冲片14安装于在俯视时与散热板2以及绝缘片3重叠的位置。
缓冲片14是由在加热时以及加压时(压缩)变形并且通过将其按压到绝缘片3而能够使绝缘片3变形的材料形成的平板形状的部件。具体而言，缓冲片14优选为由从包括硅树脂、丙烯酸树脂、氟系树脂的群中选择的任意材料形成。
参照图12，冲压上面板13B下降而使缓冲片14紧贴到绝缘片3，由此冲压上面板13B对绝缘片3以及散热板2施加向下的压力，并且加热至绝缘片3熔融的温度。其中，在此加热的温度是绝缘片3的反应发展而不热硬化的程度的低温。另外，关于加热的时间，也设为绝缘片3的反应发展而不热硬化的程度。由此，绝缘片3以追随散热板2的C面2C等的形状的方式(以形成C面3C的方式)变形。
通过从冲压加工机13拆下散热板2等，如图6所示形成具有C面2C(以及C面3C)的散热板2。
此外，在绝缘片3的上表面(与缓冲片14紧贴的面)上，从对于绝缘片3与缓冲片14紧贴而相互不剥离的问题进行抑制的观点出发，虽然未图示但也可以配置分离型膜。
接下来，参照图13的比较例，说明本实施方式的作用效果。
参照图13，在比较例的半导体器件150中，散热板2在包括其俯视时的最外端2E的端部区域中，不具有如本实施方式那样其最上表面变低的形状(图1的C面2C等)。即，图13的散热板2在其整体中与图的上下方向有关的厚度大致相等(平坦)。由于散热板2是平坦的，所以安装在其主表面上的绝缘片3也同样地，在包括其俯视时的最外端3E的端部区域中，不具有如本实施方式那样其最上表面变低的形状(图1的C面3C等)，在其整体中为大致平坦。
此外，这以外的半导体器件150的结构与半导体器件100的结构大致相同，所以对同一要素附加同一符号，不重复其说明。
在比较例的情况下，绝缘片3的最外端3E的最上部与外侧引线框4B接触。因此，导电性的外侧引线框4B与其正下的散热板2(的最外端2E)的距离(绝缘沿面距离)变短。如果外侧引线框4B与散热板2的绝缘沿面距离变短，则在半导体器件150的驱动时有可能产生外侧引线框4B与散热板2相互短路的问题。
因此，在本实施方式中，绝缘片3的与引线框4相接的一侧(上侧)的表面在绝缘片3的包括俯视时的最外端3E的至少一部分的端部区域ER中，以从引线框4向下方远离的方式变低。另外，密封树脂8以在该端部区域ER中存在于引线框4与绝缘片3(即其正下的散热板2)之间的方式进入。
因此，在本实施方式中，导电性的引线框4与其正下的导电性的散热板2之间的绝缘沿面距离相比于比较例变长。而且，在端部区域ER中密封树脂8进入到引线框4与散热板2之间，所以成为如下样式：绝缘性的密封树脂8进入到引线框4与(处于散热板2的上表面上的)绝缘片3之间的区域。由此，在本实施方式中，相比于比较例，能够提高引线框4与散热板2之间的绝缘性，并且能够确保通过散热板2释放来自半导体元件1等的发热的良好的功能(能够确保绝缘性和散热特性这双方)。
以上那样的结构通过如下来实现：在散热板2的包括俯视时的最外端的至少一部分的端部区域中，相比于散热板的端部区域以外的区域，散热板的最上表面以配置于与绝缘片相反的一侧的方式变低。这是因为，绝缘片3追随散热板2的最外端2E变低的形状，其最外端3E变低。
在此，假设外侧引线框4B具有在散热板2的端部区域ER中例如向上方延伸并以使与散热板2的距离变大的方式弯曲的形状，则能够容易地确保外侧引线框4B与散热板2的绝缘性。但是，在该情况下，有可能对引线框4实施弯曲加工等而增加引线框4的形成所需的工序数，使其制造成本高涨。另外，被实施弯曲加工的引线框4在其设置时会抖动而难以固定位置，所以需要引线框4的抖动抑制管理。而且，在被实施弯曲加工的引线框4的表面上搭载半导体元件1或者接合接合线7时，需要考虑引线框4的阶梯差的专用夹具，为此有可能导致成本进一步高涨以及生产率进一步降低。
但是，在本实施方式中，引线框4(在图9中在密封树脂8的外侧在树脂密封之后弯曲的结构的)至少在密封树脂8内其整体变得平坦，未实施弯曲加工。因此，能够降低引线框4的制造成本，并且降低密封树脂8内的引线框4的抖动的可能性。另外，无需使用考虑引线框4的阶梯差的专用夹具，所以还能够提高作为后工序的例如半导体元件1的载置工序等的生产率。
这样在本实施方式中，在如下发明有益：即使引线框4是平坦的，通过延长与其正下的散热板2的绝缘沿面距离，也能够提高绝缘性以及散热特性这双方。这是因为，通过使引线框4平坦，引线框4的加工性以及处理性变得良好，而且能够确保散热板2的端部区域ER的绝缘沿面距离所实现的绝缘性。
(实施方式2)
参照图14(A)以及图14(B)，在本实施方式中，与实施方式1的图2(A)以及图2(B)相比不同点在于，散热板2以及绝缘片3在最外端2E、3E附近的端部区域中，其主表面形成曲面2R、3R。即，在本实施方式中，代替实施方式1的C面2C、3C而形成有曲面2R、3R。通过该曲面2R、3R，散热板2以及绝缘片3在包括其最外端2E、3E的端部区域ER中相比于端部区域ER以外的区域，其最上表面变低(其厚度变薄)。
曲面2R、3R既可以是球面状，也可以是球面状以外的曲面状。绝缘片3的厚度在其整体中大致恒定，所以绝缘片3的曲面3R以追随散热板2的曲面2R的形状的方式形成。
曲面2R、3R的沿着一个主表面的方向(图14的左右方向)的尺寸a以及与主表面交叉的方向(图14的上下方向)的尺寸b和图2中的尺寸a以及尺寸b的值基本上相同。
在图14中，曲面2R、3R具有向上凸起的形状，但它们也可以具有向下凸起的形状。
此外，这以外的本实施方式的结构与实施方式1的结构大致相同，所以对同一要素附加同一符号，不重复其说明。
接下来，说明本实施方式的作用效果。在本实施方式中，除了实施方式1的作用效果以外，还能够起到以下的作用效果。
如果如本实施方式那样将端部区域ER形成为曲面状，则即使它具有与实施方式1相同的尺寸a、b，相比于如实施方式1那样端部区域ER是平面状的情况，也能够进一步延长外侧引线框4B与其正下的散热板2的绝缘沿面距离。另外，在本实施方式中，端部区域ER形成为曲线状，所以相比于端部区域ER形成为C面状的实施方式1，能够降低在端部区域ER中绝缘片3从散热板2剥离的可能性。
(实施方式3)
参照图15以及图16，在本实施方式的半导体器件300中，与实施方式1(图1)的半导体器件100相比不同点在于，散热板2包括端部区域ER在内在其整体中为平坦，在端部区域ER中未形成最上表面相比于其以外的区域向下侧变低的C面2C。
具体而言，图15以及图16的散热板2为了在端部区域ER与端部区域ER以外的区域之间使其最上表面的高度(大致)相等而变得平坦。更具体而言，该散热板2的最上表面在其整体中，与图15的上下方向有关的位置(坐标)的变化(偏差)是例如0.1mm以下。但是，在散热板2的上侧的主表面上安装的绝缘片3在其端部区域ER中变薄，形成有C面3C。其结果，(与实施方式1同样地)在绝缘片3的端部区域ER中，C面3C以从其上的外侧引线框4B向下方远离的方式具有倾斜地变低。随着接近最外端3E，绝缘片3从引线框4(4B)向下方远离的量单调地变大，C面3C以在其最外端3E处到达绝缘片3的最下表面的方式(在图16中以使最外端3E具有尖的剖面形状的方式)形成。
与实施方式1不同，在本实施方式中，C面3C并非是追随其正下的C面2C的形状而形成的，而是以使绝缘片3在端部区域ER中相比于其它区域使厚度变薄的方式形成的。绝缘片3的C面3C形成为使最外端3E处的厚度大致为0。因此，绝缘片3的最外端3E不具有图15的上下方向的成分(以及图15的上下方向的成分)而仅具有俯视时的圆周方向的成分。但是，不限于这样的样式，也可以以使最外端3E具有图15的上下方向的成分的方式形成C面3C。
参照图16，在本实施方式的端部区域ER中的绝缘片3的C面3C中，沿着与引线框4相接的上侧的表面的方向(图16的左右方向)的尺寸c对应于图2的散热板2的尺寸a，与图2的尺寸a同样地是0.5mm以上且2.0mm以下。另外，图16的端部区域ER中的绝缘片3的C面3C的与端部区域ER以外的区域相比绝缘片3的最上表面变低的最大值d对应于图2的尺寸b，与图2的尺寸b同样地是0.025mm以上且0.25mm以下。
此外，这以外的本实施方式的结构与实施方式1的结构大致相同，所以对同一要素附加同一符号，不重复其说明。
接下来，使用图17～图20，说明本实施方式的仅在绝缘片3中具有变低的部分(C面3C)的散热板2以及绝缘片3的形成方法的一个例子。
参照图17，首先准备散热板2以及绝缘片3。绝缘片3具有在俯视时与散热板2重叠的平面形状(俯视时的形状以及尺寸与散热板2大致相同)。在图17中未形成C面3C，散热板2以及绝缘片3包括最外端2E、3E在内在其整个面中厚度为大致恒定(大致平坦)。
参照图18，绝缘片3以与散热板2重叠的方式安装在散热板2的一个(上侧的)主表面上。在冲压加工机15的冲压下面板15A上的期望的位置，载置图17的散热板2以及绝缘片3。另外，在冲压加工机15的冲压上面板15B的与冲压下面板15A相向的(下侧的)面上，形成有与应形成于绝缘片3的C面3C的形状对应的倾斜15C。
参照图19，冲压上面板15B下降而使其下侧的面(包括倾斜15C的部分)紧贴到绝缘片3，由此冲压上面板13B对绝缘片3以及散热板2施加向下的压力，并且加热至绝缘片3熔融的温度。其中，在此加热的温度是绝缘片3的反应发展而不热硬化的程度的低温。另外，关于加热的时间，也设为绝缘片3的反应发展而不热硬化的程度。通过该加热以及加压，绝缘片3的一部分流动，向绝缘片3转印冲压上面板15B的下表面的倾斜15C的形状，形成如图15以及图16所示的端部区域的C面3C。
此外，此时从对于绝缘片3与冲压上面板15B紧贴而相互不剥离的问题进行抑制的观点出发，虽然未图示但也可以在绝缘片3的上表面上配置分离型膜。另外，通过流动而从散热板2的正上露出的绝缘片3在从冲压加工机15取出之后被去除。
参照图20，通过从冲压加工机15拆下散热板2等，形成安装有具有C面3C的绝缘片3的散热板2。
接下来，说明本实施方式的作用效果。
根据本实施方式，无需在散热板2的端部区域形成变薄的(最上表面变低的)区域，而能够形成绝缘片3的端部区域变薄的结构。由于无需形成向散热板2的C面，相应地能够比实施方式1更容易地提供期望的形状的绝缘片3。
即使散热板2的端部区域不一定变低而是平坦的，只要至少绝缘片3在端部区域中变低，就能够使密封树脂8进入到绝缘片3与其正上的外侧引线框4B之间，能够提高引线框4与散热板2之间的绝缘性。另外，能够确保使绝缘片3的端部区域中的引线框4与散热板2的绝缘沿面距离变长。
实施例1
在实施方式1中，通过改变图2(A)、(B)中的尺寸a、b的值来改变倾斜梯度的值，评价在散热板2的一个主表面上安装有绝缘片3的状态下进行冲压工序(参照图6)时的绝缘片3针对散热板2的紧贴性以及由该散热板2形成的半导体器件100(参照图1、图9)的绝缘性及散热性。
表1的样品编号1～15是在由无氧铜构成的散热板2(平面尺寸是30mm×20mm×3mm)的一个主表面上通过冲压工序接合有环氧树脂系的绝缘片3的半导体器件100的样品。此外，在绝缘片3中，作为体积而含有58％量的作为无机粉末填充材料的氮化硼。另外，绝缘片3的厚度是0.2mm，热传导率是12W/mK。表1示出评价该样品中的散热板2与绝缘片3的紧贴性、半导体器件100的外侧引线框4B与散热板2之间的绝缘耐压(绝缘性)、以及利用散热板2实现的半导体器件100的散热特性(散热性)而得到的结果。
[表1]
样品编号 a(mm) b(mm) 倾斜梯度 紧贴性 绝缘性 散热性
1 0 0 无 良好 2kV 100
2 0.3 0.1 33.3％ 良好 2kV 100
3 0.5 0.1 20.0％ 良好 4kV 100
4 1 0.1 10.0％ 良好 5kV 100
5 1.5 0.1 6.7％ 良好 6kV 100
6 2 0.1 5.0％ 良好 6kV 102
7 2.5 0.1 4.0％ 良好 6kV 115
8 1 0.01 1.0％ 良好 2kV 100
9 1 0.025 2.5％ 良好 5kV 100
10 1 0.1 10.0％ 良好 6kV 100
11 1 0.25 25.0％ 良好 6kV 100
12 1 0.3 30.0％ 剥离 - -
13 2 0.25 12.5％ 良好 6kV 103
14 0.4 0.25 62.5％ 剥离 - -
15 0.4 0.2 50.0％ 剥离 - -
在表1中的“绝缘性”的栏中，示出在对各半导体器件100的样品使交流电压每次按照0.5kV的幅度上升的同时施加1分钟时能够维持绝缘性的最大的电压，在该电压值是4kV以上的情况下，判定为绝缘性良好。在评价绝缘性时，无需切断引线框4的不需要部分(不实施连接杆切断)，在引线框4内全部在相同的电位的状态下测定出电压值。另外，在表1中的“散热性”的栏中，利用将厚度在整体中恒定(不形成C面2C：尺寸a、b都是0)的散热板2(样品编号1)的热阻设为100时的相对值来表示，如果是110以上，则判定为散热性低。
根据表1，具有如下倾向：在a的值小时绝缘性降低，在a的值大时热性降低。另外，具有如下倾向：在b的值小时绝缘性降低，在b的值大时无法确保散热板2与绝缘片3的紧贴性。如果由b/a的值表示的倾斜梯度高，则向散热板2安装绝缘片3时发生剥离，具有无法确保散热板2与绝缘片3之间的紧贴性的倾向。另一方面，具有如果倾斜梯度低则绝缘片3的绝缘性降低的倾向。
如果考虑以上，则可以说作为a的值最优选0.5mm以上且2.0mm以下，作为b的值最优选0.025mm以上且0.25mm以下。具体而言，样品编号3、4、5、6、9、10、11、13的各样品满足上述a、b的数值条件，紧贴性、绝缘性、散热性都呈现良好的结果。
应认为本次公开的实施方式在所有点仅为例示，并非是限制性的内容。本发明的范围并非是通过上述说明而是通过权利要求书来示出，包括与权利要求书均等的意义以及范围内的所有的变更。

Claims (7)

1.一种半导体器件，具备：
密封树脂；
散热板，被密封于所述密封树脂内；
绝缘片，在所述密封树脂内以与所述散热板的一个主表面相接的方式被安装；
引线框，以从所述密封树脂内到达所述密封树脂外的方式延伸，并以相接到所述绝缘片的与所述散热板相反的一侧的主表面上的方式被载置；以及
半导体元件，在所述密封树脂内接合到所述引线框的与所述绝缘片相反的一侧的主表面的至少一部分，
所述绝缘片的与所述引线框相接的一侧的表面在所述绝缘片的包括俯视时的最外端的至少一部分的端部区域中，以从所述引线框远离的方式具有倾斜地变低，
所述密封树脂在所述端部区域中进入到所述引线框与所述绝缘片之间，
所述引线框至少在所述密封树脂内是平坦的。
2.根据权利要求1所述的半导体器件，其中，
在所述散热板的包括俯视时的最外端的至少一部分的端部区域中，相比于所述散热板的所述端部区域以外的区域，所述散热板的最上表面以配置于与所述绝缘片相反的一侧的方式变低。
3.根据权利要求2所述的半导体器件，其中，
所述散热板的所述端部区域的沿着所述散热板的一个主表面的方向的尺寸是0.5mm以上且2.0mm以下，
所述散热板的所述端部区域的所述散热板的最上表面比所述散热板的所述端部区域以外的区域变低的最大值是0.025mm以上且0.25mm以下。
4.根据权利要求1所述的半导体器件，其中，
在所述散热板的包括俯视时的最外端的至少一部分的端部区域中，为了使所述散热板的所述端部区域以外的区域与所述散热板的最上表面的高度相等而所述散热板是平坦的。
5.根据权利要求1～4中的任意一项所述的半导体器件，其中，
所述绝缘片的所述端部区域的沿着所述绝缘片的与所述引线框相接的一侧的表面的方向的尺寸是0.5mm以上且2.0mm以下，
所述绝缘片的所述端部区域的所述绝缘片的与所述引线框相接的一侧的表面比所述绝缘片的所述端部区域以外的区域变低的最大值是0.025mm以上且0.25mm以下。
6.根据权利要求1～5中的任意一项所述的半导体器件，其中，
所述绝缘片的厚度是0.05mm以上且0.5mm以下。
7.根据权利要求1～6中的任意一项所述的半导体器件，其中，
所述绝缘片的所述端部区域中的主表面形成曲面。
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