JP7364168B2 - 半導体モジュール及び半導体デバイス収容体 - Google Patents
半導体モジュール及び半導体デバイス収容体 Download PDFInfo
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- JP7364168B2 JP7364168B2 JP2020018745A JP2020018745A JP7364168B2 JP 7364168 B2 JP7364168 B2 JP 7364168B2 JP 2020018745 A JP2020018745 A JP 2020018745A JP 2020018745 A JP2020018745 A JP 2020018745A JP 7364168 B2 JP7364168 B2 JP 7364168B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49565—Side rails of the lead frame, e.g. with perforations, sprocket holes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49586—Insulating layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
Claims (14)
- 金属製のベースと、
前記ベースの周縁部上に設けられた絶縁性のフレームと、
前記フレーム上に設けられた金属製のリードと、
前記フレームに囲まれた空間の前記ベース上に搭載された半導体チップと、を備え、 前記フレームは、銀を含む接合材によって前記ベースに固着されており、
前記フレームは、前記ベースに対向する面の、前記空間側の角部である内側部分、及び、前記内側部分の反対側の角部である外側部分において、凹部が形成されており、
前記外側部分及び前記内側部分の前記凹部内の少なくとも一方には、保護材が充填されている、半導体モジュール。 - 前記保護材は、熱可塑性の樹脂である、請求項1に記載の半導体モジュール。
- 前記保護材は、150℃以上230℃以下の温度で硬化する樹脂である、請求項2に記載の半導体モジュール。
- 前記保護材は、シクロオレフィンポリマー樹脂である、請求項2又は請求項3に記載の半導体モジュール。
- 前記保護材の誘電率は、3.4以上4.0以下である、請求項1から請求項4のいずれか一項に記載の半導体モジュール。
- 前記凹部は、前記内側部分及び前記外側部分のうち、積層方向において前記リードと重なる部分にのみ形成されている、請求項1から請求項5のいずれか一項に記載の半導体モジュール。
- 前記凹部の奥行き及び高さは、0.05mm以上0.5mm以下とされている、請求項1から請求項6のいずれか一項に記載の半導体モジュール。
- 前記フレームは、セラミック製である、請求項1から請求項7のいずれか一項に記載の半導体モジュール。
- 前記セラミックは、酸化アルミニウムを含む材料である、請求項8に記載の半導体モジュール。
- 前記フレームは、樹脂製である、請求項1から請求項7のいずれか一項に記載の半導体モジュール。
- 前記樹脂は、ポリイミド系樹脂である、請求項10に記載の半導体モジュール。
- 前記半導体チップは、窒化物半導体を含んで構成されている、請求項1から請求項11のいずれか一項に記載の半導体モジュール。
- 前記フレームは少なくとも2層を含む多層基板を含み、前記リードは前記多層基板のうちの1層上に設けられた金属製配線であり、前記1層の基板が前記空間の外部に引き出されている、請求項1から請求項12のいずれか一項に記載の半導体モジュール。
- 金属製のベースと、
前記ベースの周縁部上に設けられた絶縁性のフレームと、
前記フレーム上に設けられた金属製のリードとを備え、
前記フレームは、銀を含む接合材によって前記ベースに固着されており、
前記フレームは、前記ベースに対向する面の、前記フレームに囲まれた空間側の角部である内側部分、及び、前記内側部分の反対側の角部である外側部分において、凹部が形成されており、
前記外側部分及び前記内側部分の前記凹部内の少なくとも一方には、保護材が充填されている、半導体デバイス収容体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2019022410 | 2019-02-12 | ||
JP2019022410 | 2019-02-12 |
Publications (2)
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JP2020136674A JP2020136674A (ja) | 2020-08-31 |
JP7364168B2 true JP7364168B2 (ja) | 2023-10-18 |
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US (2) | US10957613B2 (ja) |
JP (1) | JP7364168B2 (ja) |
CN (1) | CN111554650B (ja) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000236034A (ja) | 1999-02-16 | 2000-08-29 | Sumitomo Metal Electronics Devices Inc | 電子部品用パッケージ |
JP2003218252A (ja) | 2002-01-28 | 2003-07-31 | Mitsubishi Electric Corp | 高周波高出力半導体パッケージ装置 |
JP2003282751A (ja) | 2002-03-20 | 2003-10-03 | Sumitomo Metal Electronics Devices Inc | 高周波用パッケージならびに高周波用パワーモジュール基板及びその製造方法 |
JP2007528590A (ja) | 2003-05-21 | 2007-10-11 | キョウセラ アメリカ インコーポレーテッド | 金/銀/銅の合金の金属フィラーを有する半導体パッケージ |
JP2011176089A (ja) | 2010-02-24 | 2011-09-08 | Mitsubishi Electric Corp | 気密パッケージ |
JP2014132651A (ja) | 2012-12-03 | 2014-07-17 | Deiakkusu:Kk | マイクロ波電力素子用外囲器、マイクロ波電力素子及びそれらの製造方法 |
JP2014154636A (ja) | 2013-02-06 | 2014-08-25 | Mitsubishi Electric Corp | 電子部品パッケージおよびその製造方法 |
JP2015204426A (ja) | 2014-04-16 | 2015-11-16 | Ngkエレクトロデバイス株式会社 | 電子部品収納用パッケージ |
JP2017092389A (ja) | 2015-11-16 | 2017-05-25 | シャープ株式会社 | 半導体装置 |
WO2019026975A1 (en) | 2017-08-02 | 2019-02-07 | Sumitomo Electric Device Innovations, Inc. | METHOD FOR ASSEMBLING SEMICONDUCTOR DEVICE |
Family Cites Families (10)
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JPH0783069B2 (ja) * | 1985-12-19 | 1995-09-06 | 第一精工株式会社 | 半導体装置およびその製造方法 |
JPH0487354A (ja) * | 1990-07-30 | 1992-03-19 | Hitachi Ltd | 半導体装置 |
JPH10163353A (ja) | 1996-02-27 | 1998-06-19 | Toshiba Corp | マイクロ波デバイス用パッケージ |
CN1497716A (zh) * | 2002-10-22 | 2004-05-19 | 住友电气工业株式会社 | 用于装载半导体芯片的封装及半导体器件 |
JP2007250703A (ja) * | 2006-03-15 | 2007-09-27 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP5310660B2 (ja) * | 2010-07-01 | 2013-10-09 | 富士電機株式会社 | 半導体装置 |
JP2012028699A (ja) * | 2010-07-27 | 2012-02-09 | Panasonic Corp | 半導体装置、リードフレーム集合体及びその製造方法 |
CN104603943B (zh) * | 2012-09-24 | 2017-07-04 | 瑞萨电子株式会社 | 半导体器件的制造方法以及半导体器件 |
CN105684147B (zh) * | 2014-04-30 | 2019-04-05 | 富士电机株式会社 | 半导体模块及其制造方法 |
DE112016000614T5 (de) * | 2015-09-17 | 2017-10-19 | Fuji Electric Co., Ltd. | Lotmaterial für Halbleiterelemente |
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2020
- 2020-02-06 JP JP2020018745A patent/JP7364168B2/ja active Active
- 2020-02-07 CN CN202010082506.7A patent/CN111554650B/zh active Active
- 2020-02-10 US US16/786,487 patent/US10957613B2/en active Active
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2021
- 2021-02-05 US US17/169,011 patent/US11502011B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000236034A (ja) | 1999-02-16 | 2000-08-29 | Sumitomo Metal Electronics Devices Inc | 電子部品用パッケージ |
JP2003218252A (ja) | 2002-01-28 | 2003-07-31 | Mitsubishi Electric Corp | 高周波高出力半導体パッケージ装置 |
JP2003282751A (ja) | 2002-03-20 | 2003-10-03 | Sumitomo Metal Electronics Devices Inc | 高周波用パッケージならびに高周波用パワーモジュール基板及びその製造方法 |
JP2007528590A (ja) | 2003-05-21 | 2007-10-11 | キョウセラ アメリカ インコーポレーテッド | 金/銀/銅の合金の金属フィラーを有する半導体パッケージ |
JP2011176089A (ja) | 2010-02-24 | 2011-09-08 | Mitsubishi Electric Corp | 気密パッケージ |
JP2014132651A (ja) | 2012-12-03 | 2014-07-17 | Deiakkusu:Kk | マイクロ波電力素子用外囲器、マイクロ波電力素子及びそれらの製造方法 |
JP2014154636A (ja) | 2013-02-06 | 2014-08-25 | Mitsubishi Electric Corp | 電子部品パッケージおよびその製造方法 |
JP2015204426A (ja) | 2014-04-16 | 2015-11-16 | Ngkエレクトロデバイス株式会社 | 電子部品収納用パッケージ |
JP2017092389A (ja) | 2015-11-16 | 2017-05-25 | シャープ株式会社 | 半導体装置 |
WO2019026975A1 (en) | 2017-08-02 | 2019-02-07 | Sumitomo Electric Device Innovations, Inc. | METHOD FOR ASSEMBLING SEMICONDUCTOR DEVICE |
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Publication number | Publication date |
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JP2020136674A (ja) | 2020-08-31 |
US11502011B2 (en) | 2022-11-15 |
US10957613B2 (en) | 2021-03-23 |
US20210159132A1 (en) | 2021-05-27 |
CN111554650B (zh) | 2023-09-29 |
CN111554650A (zh) | 2020-08-18 |
US20200258796A1 (en) | 2020-08-13 |
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