CN106415831B - 半导体模块 - Google Patents

半导体模块 Download PDF

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Publication number
CN106415831B
CN106415831B CN201480079109.7A CN201480079109A CN106415831B CN 106415831 B CN106415831 B CN 106415831B CN 201480079109 A CN201480079109 A CN 201480079109A CN 106415831 B CN106415831 B CN 106415831B
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Prior art keywords
lead frame
semiconductor module
solder flow
flow suppressing
suppressing portion
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Expired - Fee Related
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CN201480079109.7A
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English (en)
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CN106415831A (zh
Inventor
伏江俊祐
川野佑
浅尾淑人
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明提供一种半导体模块，通过在由多个终端构成的引线框上焊接安装电子元器件以及母线而形成，其中，引线框在焊接安装的元器件的焊接部附近形成有能抑制引线框上的焊料流动方向的焊料流动抑制部，利用该结构来抑制安装元器件的旋转、移动等位置偏移，从而能实现能使模块尺寸小型化的半导体模块。

Description

半导体模块
技术领域
本发明涉及在引线框上搭载有多个半导体元件的半导体模块，尤其涉及模块的小型化。
背景技术
近年来，具备IGBT(Insulated Gate Bipolar Transistor：绝缘栅双极晶体管)、功率MOSFET等功率半导体元件的半导体模块要求具有高绝缘性以及良好散热性的半导体封装。而且，这种半导体模块正在往小型化、高密度安装化发展。例如，可以使多个端子一体化来削减端子数量，从而实现半导体模块的小型化(例如参照专利文献1)。
现有技术文献
专利文献
专利文献1：日本专利特开2011-250491号公报
发明内容
发明所要解决的技术问题
然而，现有技术存在如下问题。
对于专利文献1所揭示的半导体模块，各终端上未安装元件的空间较多，通过提高元件安装率，小型化尚有很大余地。并且，通过使半导体模块小型化来提高引线框的良品率。
本发明是为了解决如上所述的问题而完成的，其目的在于，获得一种半导体模块，该半导体模块能力图实现引线框的有效利用，并能减小模块尺寸。
解决技术问题所采用的技术方案
本发明的半导体模块通过在由多个终端构成的引线框上焊接安装电子元器件以及母线而形成，其中，引线框在所焊接安装的元器件的焊接部附近形成有能限制引线框上的焊料流动方向的焊料流动抑制部。
发明效果
根据本发明，通过在引线框上形成由凹凸形状、缺口或孔构成的焊料流动抑制部来限制焊料流动方向，从而抑制安装元器件的旋转、移动等位置偏移，能实现引线框的有效利用，并获得能使模块尺寸小型化的半导体模块。
附图说明
图1是以安装于车辆的动力转向装置为例来示出应用了本发明实施方式1的半导体模块的装置的整体电路图。
图2是以往的U相半导体模块的半完成状态的透视图。
图3是应用了本发明实施方式1的焊料流动抑制部的U相半导体模块的半完成状态的透视图。
图4是应用了本发明实施方式1的焊料流动抑制部的U相半导体模块的半完成状态的剖视图。
图5是在与本发明实施方式1的上述图3不同的位置应用了焊料流动抑制部的U相半导体模块的半完成状态的透视图。
图6是应用了本发明实施方式2的焊料流动抑制部的U相半导体模块的半完成状态的透视图。
图7是应用了与本发明实施方式2的图6不同的焊料流动抑制部的U相半导体模块的半完成状态的透视图。
图8是以安装于车辆的动力转向装置为例来示出应用了本发明实施方式3的半导体模块的装置的整体电路图。
图9是应用了本发明实施方式3的焊料流动抑制部的半导体模块的半完成状态的透视图。
图10是应用了本发明实施方式4的焊料流动抑制部的半导体模块的半完成状态的透视图。
图11是应用了与本发明实施方式4的上述图10不同的焊料流动抑制部的半导体模块的半完成状态的透视图。
具体实施方式
下面，参照附图对本发明的半导体模块进行说明。此外，各图中对相同或相当的部分标注相同标号来进行说明。
实施方式1.
图1是以安装于车辆的动力转向装置为例来示出应用了本发明实施方式1的半导体模块的装置的整体电路图。该装置由电动机1、控制单元2构成，且两个部位形成为一体。
控制单元2包含：由微机8及其周边电路构成的控制电路部20；电源继电器4；以及功率电路部3，该功率电路部3具备4向电动机绕组供电的逆变器。
控制单元2输入电池、车速传感器、转矩传感器的电源以及各种信息，利用微机8运算方向盘辅助量，并经由前置驱动器9输出到逆变器3。此外，对来自检测电动机1的旋转的旋转传感器7的信号进行传输的旋转传感器I/F、以及对提供给电动机1的电流进行测定的电流监视器I/F10与微机相连。
电源部接受电池电力而工作，由用于抑制噪声的扼流线圈6、平滑电容器5、以及连接或切断电源线的继电器4构成，并向逆变器3供电。逆变器3与电动机1的三相绕组相对应地具备三组、共计六个上下臂的开关元件11～16。此外，各相分别配置有起到能连接、切断向电动机1的供电的继电器作用的开关元件17～19。
这些开关元件(11～16、17～19)与各绕组相对应而存在，因此标注u、v、w来命名。此外，用于控制各开关元件的端子Gh、Gl、Gm分别经由前置驱动器9与微机8相连。
并且，为了监视上下臂的开关元件11～16间的电压，存在三个端子Mm，并且存在电流检测用分流电阻22、23、24的上游监视端子。它们的监视值经由电流监视器I/F10被传递到微机8。另外，还存在电动机1的各相绕组端子Mu、Mv、Mw。
逆变器3由内置了多个开关元件的U相半导体模块、V相半导体模块、W相半导体模块这三个半导体模块构成。这些半导体模块由于内置了多个开关元件，因此也内置了多个连接各元器件的电路，并且具有多个端子。此外，用于向电动机1供电的电流也较大，需要提高散热性。因此，从在本装置中所占的规模、品质、成本等方面考虑，半导体模块是较为重要的元器件。
下面，利用图2及其之后的附图对半导体模块的结构进行说明。特别是，在之后的说明中，利用U相半导体模块进行详细说明。首先，利用图2，对以往的半导体模块进行说明。图2是以往的U相半导体模块的半完成状态的透视图。
这里，U相半导体模块是对逆变器3的U相进行驱动的元器件。该U相半导体模块采用利用密封树脂将U相上侧FET11、U相下侧FET12、U相电动机继电器FET17、分流电阻22以及安装了内引线32的引线框31进行模塑而成的结构。此外，V相半导体模块、W相半导体模块也采用同样的结构。下面，对半导体模块内的各部分进行详细说明。
引线框31通过使用铜或铁类的合金材料对一块金属板材进行冲压加工、蚀刻加工或切割加工来进行制造，并在各个部位不相互重合的情况下被拉伸。此外，冲压加工具有量产性较高的优点，蚀刻加工具有交货期较短的优点，切割加工具有低成本的优点。
芯片安装面上例如如图2所示，分别搭载有U相FET11、12、17这三个作为半导体芯片。半导体芯片彼此，或者引线框31彼此利用铜或铁类材料的内引线32连接。并且，该内引线32跨过引线框31的上方。并且，多个端子、即终端作为外部端子34在图2中向下方伸出。
接着，对图2所示的半导体模块的制造方法进行说明。
(步骤1)在成形模具的腔体内放置安装了半导体元件、电子元器件等的引线框31。此时，引线框31通过位于模具上的固定销或可动销来定位。
(步骤2)接下来，成形模具被密封，通过将环氧树脂等热固化性树脂填充到腔体内，从而形成密封树脂30。
(步骤3)然后，在密封树脂30成熟固化后，最终对引线框31的不需要的区域进行切割、冲压，从而完成半导体模块。
另外，也可以不用密封树脂30覆盖各部位，而采用形成外框并用硅树脂将其中部覆盖的结构。
接着，对本发明的主旨即焊料流动抑制部进行说明。本发明的焊料流动抑制部具有如下技术特征：通过对引线框上的焊料流动方向进行控制(限制)，从而抑制安装元器件的旋转、移动等位置偏移。图3是应用了本发明实施方式1的焊料流动抑制部的U相半导体模块的半完成状态的透视图。此外，图4是应用了本发明实施方式1的焊料流动抑制部的U相半导体模块的半完成状态的剖视图，是用于说明图3中所使用的焊料流动抑制部的图。
如图3、图4所示，本实施方式1中，在引线框31设置有凸形状36(凹凸形状36)的焊料流动抑制部。在图3、图4中，举例示出抑制分流电阻22的旋转、移动等位置偏移的情况。
另一方面，图5是应用了本发明实施方式1的焊料流动抑制部的U相半导体模块的半完成状态的透视图，举例示出了在与上述图3不同的位置设置焊料流动抑制部即凸形状36的情况。图5中，为了抑制FET12的位置偏移，在安装有FET12的两侧设置了凸形状36。
通过在引线框31预先形成这种位置偏移抑制部，能防止安装在位置偏移抑制部附近的元器件与其他安装元器件之间的干扰。并且，通过如图5那样对FET12的位置偏移进行抑制，从而也能抑制内引线32的安装错误、引线键合33的断线这样的二级错误。并且，由于提高了元器件安装到引线框31的位置精度，因此与以往相比能在引线框31上以更高密度安装元器件，能使半导体模块小型化。
如上所述，根据实施方式1，使用在合适位置设置了具有凸形状的位置偏移抑制部的引线框来进行元器件安装。由于具备这种位置偏移抑制部，因此能有效防止焊料流入安装于位置偏移抑制部附近的元器件与其他安装元器件之间的情况。其结果是，能提高引线框上的安装元器件的搭载位置精度，能获得实现了高安装化、小型化的半导体模块。
而且，由于能使半导体模块小型化，因此引线框本身也能紧凑化，能提高良品率。而且，由于安装精度变高，因此能削减制造时的不良品。
实施方式2.
在上述实施方式1中，对在引线框31形成凸形状36作为位置偏移抑制部的情况进行了说明。相对于此，在本实施方式2中，对用凸形状36以外的结构实现设置在引线框31的焊料流动抑制部的情况进行说明。因此，下文以伴随上述不同点产生的变更部分为中心进行说明，并省略与上述半导体模块相同结构部分的说明。
上述实施方式1所使用的凸形状36带有曲率半径R，在引线框31上的可安装元器件区域变小。为此，本实施方式2中，对能使可安装元器件区域比上述实施方式1更大且能使半导体模块进一步小型化的焊料流动抑制部进行说明。
图6是应用了本发明实施方式2的焊料流动抑制部的U相半导体模块的半完成状态的透视图。图7是应用了与本发明实施方式2的图6不同的焊料流动抑制部的U相半导体模块的半完成状态的透视图。
本实施方式中，使用缺口37(图6)或孔38(图7)作为焊料流动抑制部。并且，通过使引线框31的缺口37或孔38的加工毛边朝向元器件安装面侧，从而抑制焊料流动。
由此，本实施方式2的焊料流动抑制部设为缺口37或孔38，形成在引线框31上。其结果是，与上述实施方式1那样形成凸形状36的情况相比，能在不使引线框31上的可安装元器件区域变小的情况下，抑制安装元器件的位置偏移。
另外，考虑加工精度和可靠性来决定作为焊料流动抑制部设置在引线框31的缺口37、孔38的宽度，优选设为引线框31的厚度以上。
如上所述，根据实施方式2，使用在合适位置设置了由缺口或孔构成的位置偏移抑制部的引线框来进行元器件安装。通过采用这种结构，与上述实施方式1相比，能扩大可安装元器件区域。其结果是，能提高引线框上的安装元器件的搭载位置精度，并能获得与上述实施方式1相比进一步实现了高安装化、小型化的半导体模块。
另外，利用半冲裁(half blanking)工艺对上述实施方式1中说明的凸形状36进行加工，来代替使用缺口37或孔38作为焊料流动抑制部，也能获得与形成缺口37或孔38时同样的效果。
实施方式3.
在上述实施方式1、2中，对用U相、V相、W相的各半导体模块单独进行模块化的结构进行了说明。相比于此，本实施方式3中，对将构成逆变器3的三个半导体模块进行单模块化的情况进行说明。
图8是以安装于车辆的动力转向装置为例来示出应用了本发明实施方式3的半导体模块的装置的整体电路图。与上述实施方式1的图1相比，本实施方式3的图8的结构伴随构成逆变器3的三个半导体模块的单模块化的变更，电流监视用的分流电阻(25)的数量也从三个变成一个。
此外，图9是应用了本发明实施方式3的焊料流动抑制部的半导体模块的半完成状态的透视图，与图8对应，示出了将三个半导体模块单模块化的情况。为此，利用图8、图9，以单模块化的不同点为中心进行如下说明，并且对于与上述实施方式1、2的半导体模块相同的构成部分，省略其说明。
本实施方式3的半导体模块将构成逆变器3的所有元器件单模块化。因此，与按照各个相单独进行模块化的情况相比，一个模块的尺寸大型化，进而内引线32也变大。特别是，与对各相间的同电位终端进行连接的母线相当的内引线32a的长度方向尺寸相比于其他元器件有所扩大。因此，在安装到引线框31时，元器件旋转时的位置偏移量变大，会妨碍模块小型化。
为此，在上述那样大型化的模块所使用的引线框31中应用本发明的焊料流动抑制部，从而能有效抑制位置偏移。另外，图9举例示出了应用缺口部37作为焊料流动抑制部的情况。由于具备这种焊料流动抑制部，因此在对大量元器件进行单模块化的情况下，也能使元器件间距离伴随搭载位置精度的提高而变短，能制作元器件高密度安装的半导体模块。
如上所述，根据实施方式3，在对大量元器件进行单模块化时，使用在合适位置设置了本发明的位置偏移抑制部的引线框来进行元器件安装。其结果是，能提高引线框上安装元器件的搭载位置精度，从而能缩短元器件间距离，获得实现了高安装化、小型化的半导体模块。
实施方式4.
本实施方式4中，对用于实现与上述实施方式3的结构相比进一步高安装化的结构进行说明。图10是应用了本发明实施方式4的焊料流动抑制部的半导体模块的半完成状态的透视图，与上述图8对应，举例示出了将三个半导体模块单模块化的情况。
本实施方式4的半导体模块与上述实施方式3同样，具有对构成逆变器3的所有元器件进行单模块化的结构。这里，若与上述实施方式3的图9相比，本实施方式4的图10的结构具有如下不同点：内引线32b与内引线32c立体交叉。为此，利用图10，以该不同点为中心进行如下说明，并且此处，对于与上述实施方式1～3的半导体模块相同的构成部分，省略说明。
本实施方式4如图10所示，采用使相当于不同电位的母线的内引线32b与内引线32c立体交叉的结构。像这样同时采用本发明的焊料流动抑制部和立体交叉结构，与上述实施方式3相比，能使半导体模块进一步小型化。另外，图10举例示出了应用缺口部37作为焊料流动抑制部的情况。
更具体而言，能缩小图10中从左上向右下的以阴影所示的第二可缩小区域41的部分，从而有助于半导体模块的小型化。
接着，图11是应用了与本发明实施方式4的上述图10不同的焊料流动抑制部的半导体模块的半完成状态的透视图。该图11中，在上述图10的结构的基础上，对安装有内引线32c的U相下侧FET、V相下侧FET进一步设置了由孔38构成的焊料流动抑制部。
由此，通过形成孔38，能提高FET的搭载位置精度，从而能更可靠地避免内引线32b与内引线32c的接触短路。其结果是，在对大量元器件进行单模块化时，也能在确保产品可靠性的基础上实现半导体模块的小型化。
如上所述，根据实施方式4，在对大量元器件进行单模块化时，使用在合适位置设置了本发明的位置偏移抑制部的引线框并采用立体交叉结构来进行元器件安装。其结果是，能提高引线框上安装元器件的搭载位置精度，从而能缩短元器件间距离，获得实现了高安装化、小型化的半导体模块。

Claims (13)

1.一种半导体模块，该半导体模块在由多个终端构成的引线框上焊接安装电子元器件以及母线而形成，其特征在于，
所述引线框在焊接安装的元器件的焊接部附近形成有能限制引线框上的焊料流动方向的焊料流动抑制部，
所述焊料流动抑制部构成为包含相对于所述引线框的元器件安装面向安装元器件的方向凸起的凸形状，
所述凸形状通过在沿着所述焊接部的区域的至少一部分设置缺口或孔并且使所述缺口或所述孔的加工毛边朝向所述元器件安装面侧来形成。
2.如权利要求1所述的半导体模块，其特征在于，
所述引线框通过在沿着所述焊接部的区域的至少一部分设置所述凸形状及向安装元器件的方向凹陷的凹形状来形成所述焊料流动抑制部。
3.如权利要求2所述的半导体模块，其特征在于，
所述引线框在沿着所述焊接部的所有区域设置有所述凸形状及所述凹形状。
4.如权利要求1所述的半导体模块，其特征在于，
所述引线框在沿着所述焊接部的所有区域设置有所述缺口或所述孔。
5.如权利要求1或4所述的半导体模块，其特征在于，
作为所述焊料流动抑制部设置在所述引线框的所述缺口或所述孔的宽度在所述引线框的厚度以上。
6.如权利要求2或3所述的半导体模块，其特征在于，
作为所述焊料流动抑制部设置在所述引线框的所述凸形状及所述凹形状利用半冲裁工艺进行加工而形成。
7.如权利要求1至4的任一项所述的半导体模块，其特征在于，
所述引线框中，在将同电位的终端之间进行连接的母线的焊接部附近的至少一部分设置有所述焊料流动抑制部。
8.如权利要求7所述的半导体模块，其特征在于，
所述引线框中，所述焊料流动抑制部设置在所述母线两端的焊接部附近。
9.如权利要求1所述的半导体模块，其特征在于，
所述引线框中，在将焊接安装的电子元器件间或所述引线框的终端间、或者所述电子元器件与所述终端之间进行连接的两组母线的焊接部附近设置有所述焊料流动抑制部，该两组母线以不同电位立体交叉。
10.如权利要求1所述的半导体模块，其特征在于，
所述引线框中，在将焊接安装的电子元器件间或所述引线框的终端间、或者所述电子元器件与所述终端之间进行连接的母线的正下方，配置成与所述母线立体交叉的电子元器件的焊接部附近，设置有所述焊料流动抑制部。
11.如权利要求1所述的半导体模块，其特征在于，
在将具备对三相以上的多相逆变器装置进行驱动的多个开关元件的半导体进行模块化时，按所述多相逆变器装置的每个相，单独利用形成有所述焊料流动抑制部的所述引线框进行模块化。
12.如权利要求1所述的半导体模块，其特征在于，
在将具备对三相以上的多相逆变器装置进行驱动的多个开关元件的半导体进行模块化时，按所述多相逆变器装置的每两个相或每三个相，利用形成有所述焊料流动抑制部的所述引线框进行模块化。
13.如权利要求12所述的半导体模块，其特征在于，
所述焊料流动抑制部设置在对异相间的同电位的终端进行连接的母线的焊接部附近。
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