CN110854096A - 一种新型封装的分立器件 - Google Patents
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- 230000017525 heat dissipation Effects 0.000 claims abstract description 34
- 230000005669 field effect Effects 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000010992 reflux Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 4
- 238000009434 installation Methods 0.000 abstract description 2
- 230000035939 shock Effects 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 description 5
- 230000007774 longterm Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 2
- RQMIWLMVTCKXAQ-UHFFFAOYSA-N [AlH3].[C] Chemical compound [AlH3].[C] RQMIWLMVTCKXAQ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
一种新型封装的分立器件,主要包括绝缘散热板及固定设置在绝缘散热板上的二极管芯片和场效应晶体管芯片,所述绝缘散热板靠近二极管芯片的一侧固定设置有作为输入端的第一金属引脚,所述二极管芯片及场效应晶体管芯片通过金属连接件设置有作为输出端的第二金属引脚;所述绝缘散热板、二极管芯片、场效应晶体管芯片包覆在塑封外壳内且所述绝缘散热板的外端暴露在塑封外壳外并与所述塑封外壳的外侧持平;所述场效应晶体管芯片上通过金属连接件设置有控制引脚;本发明将金属引脚位置进行优化,增加引脚间爬电距离,在总体上提高了散热效率,功率输出密度,抗冲击能力与绝缘可靠性,降低了安装和使用成本。
Description
技术领域
本发明属于电力电子学领域,具体涉及一种新型封装的分立器件。
背景技术
目前场效应晶体管模块在变频器,焊机,感应加热,不间断电源,风力发电与电动汽车领域的应用越来越广泛,以上的各领域对于分立器件来说,封装体积,功率密度,可靠性等各方面的要求也越来越严苛。
在传统的分立器件封装中,为良好的散热条件与功率密度之间平衡,塑封体均将一侧带电金属面外露;为方便安装还需在塑封体表面预留压块空间,或者贯通圆孔。导致安装过程中客户端需要加装绝缘垫片,提升了封装的接触热阻,降低了封装的散热效率与芯片的抗冲击能力。空间利用率的压缩导致功率密度无法提升。引脚间的间距短,长期使用过程中受环境影响更易产生爬电现象,降低了器件使用的安全性与可靠性。
发明内容
本发明要解决的技术问题在于,针对现有技术的上述缺陷,提供一种新封装的分立器件,以解决现有技术情况下散热面不带绝缘,散热效率低,功率密度低等问题。
本发明的目的是通过如下技术方案来完成的,一种新型封装的分立器件,主要包括绝缘散热板及固定设置在绝缘散热板上的二极管芯片和场效应晶体管芯片,所述绝缘散热板靠近二极管芯片的一侧固定设置有作为输入端的第一金属引脚,所述二极管芯片及场效应晶体管芯片通过金属连接件设置有作为输出端的第二金属引脚;所述绝缘散热板、二极管芯片、场效应晶体管芯片包覆在塑封外壳内且所述绝缘散热板的外端暴露在塑封外壳外并与所述塑封外壳的外侧持平;所述场效应晶体管芯片上通过金属连接件设置有控制引脚。
进一步地,所述绝缘散热板包括绝缘层及设置在绝缘层前后相对侧面上的金属导电层,所述绝缘层为氧化铝、氮化铝或氮化硅材料制成,所述金属导电层为铜或者铝材料制成。
进一步地,所述金属连接件为分别设置在二极管芯片和场效应晶体管芯片上的金属垫片,所述第二金属引脚的一端通过两金属垫片依次与场效应晶体管芯片及二极管芯片固定连接,另一端向塑封外壳的外侧延伸。
进一步地,所述金属连接件为连接二极管芯片和场效应晶体管芯片的若干金属引线,所述金属引线的形状为波浪形,所述第二金属引脚的一端通过金属引线依次与场效应晶体管芯片及二极管芯片固定连接,另一端向塑封外壳的外侧延伸。
进一步地,所述场效应晶体管芯片及二极管芯片通过回流焊接方式与所述绝缘散热板固定连接。
进一步地,所述塑封外壳的长度为25-30mm,宽度为15-20mm,厚度为3-6mm;所述绝缘散热板长度为20-25mm,宽度为12-16mm,厚度为0.5-1.5mm。
本发明的有益技术效果在于:本发明加大散热片面积并增加了绝缘设计,可直接在客户端安装至散热板;对芯片装载区域面积优化,提高封装的额定电流上限,并使用金属垫片对芯片进行双面焊接,增加热容;优化金属引脚位置,降低长期使用造成的爬电现象,加大金属引脚面积,提升过电流能力;在保证散热效率的情况下大幅度提升输出功率,安全性与可靠性。
附图说明
图1为本发明所述分立器件第一种实施例的侧面结构示意图;
图2为图1的局部放大结构示意图;
图3为本发明所述分立器件第一种实施例的正面结构示意图;
图4为本发明所述分立器件第二种实施例的侧面结构示意图;
图5为本发明所述分立器件第二种实施例的正面结构示意图。
具体实施方式
为使本领域的普通技术人员更加清楚地理解本发明的目的、技术方案和优点,以下结合附图和实施例对本发明做进一步的阐述。
如图1-5所示,本发明所述的一种新型封装的分立器件,主要包括绝缘散热板1及固定设置在绝缘散热板1上的二极管芯片2和场效应晶体管芯片3,所述绝缘散热板1长度为20-25mm,宽度为12-16mm,厚度为0.5-1.5mm,所述绝缘散热板1靠近二极管芯片2的一侧固定设置有作为输入端的第一金属引脚4,所述二极管芯片2及场效应晶体管芯片3通过金属连接件设置有作为输出端的第二金属引脚5;所述绝缘散热板1、二极管芯片2、场效应晶体管芯片3包覆在塑封外壳6内且所述绝缘散热板1的外端暴露在塑封外壳6外并与所述塑封外壳6的外侧持平;所述场效应晶体管芯片3上通过金属连接件设置有控制引脚7。在整体框架制造完成后通过外包覆塑封外壳6的方式,进行相对位置的固定,提高金属引脚之间的爬电距离与整体可靠性。
参照图2所示,所述绝缘散热板1包括绝缘层8及设置在绝缘层8前后相对侧面上的金属导电层9,所述绝缘层8为氧化铝、氮化铝或氮化硅材料制成,所述金属导电层9为铜或者铝材料制成。
参照图1所示,所述金属连接件为分别设置在二极管芯片2和场效应晶体管芯片3上的金属垫片10,所述第二金属引脚5的一端通过两金属垫片10依次与场效应晶体管芯片3及二极管芯片2固定连接,另一端向塑封外壳6的外侧延伸。
参照图4所示,所述金属连接件为连接二极管芯片2和场效应晶体管芯片3的若干金属引线11,所述金属引线11的形状为波浪形,所述第二金属引脚5的一端通过金属引线11依次与场效应晶体管芯片3及二极管芯片2固定连接,另一端向塑封外壳6的外侧延伸;金属引脚的材料为铝碳或铝碳化硅合金。
参照图1所示,所述场效应晶体管芯片3及二极管芯片2通过回流焊接方式与所述绝缘散热板1固定连接。所述塑封外壳6的长度为25-30mm,宽度为15-20mm,厚度为3-6mm;所述绝缘散热板长度为20-25mm,宽度为12-16mm,厚度为0.5-1.5mm。
本发明加大散热片面积并增加了绝缘设计,可直接在客户端安装至散热板;对芯片装载区域面积优化,提高封装的额定电流上限,并使用金属垫片对芯片进行双面焊接,增加热容;优化金属引脚位置,降低长期使用造成的爬电现象,加大金属引脚面积,提升过电流能力;在保证散热效率的情况下大幅度提升输出功率,安全性与可靠性。
本文中所描述的具体实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,但凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。
Claims (6)
1.一种新型封装的分立器件,其特征在于:主要包括绝缘散热板及固定设置在绝缘散热板上的二极管芯片和场效应晶体管芯片,所述绝缘散热板靠近二极管芯片的一侧固定设置有作为输入端的第一金属引脚,所述二极管芯片及场效应晶体管芯片通过金属连接件设置有作为输出端的第二金属引脚;所述绝缘散热板、二极管芯片、场效应晶体管芯片包覆在塑封外壳内且所述绝缘散热板的外端暴露在塑封外壳外并与所述塑封外壳的外侧持平;所述场效应晶体管芯片上通过金属连接件设置有控制引脚。
2.根据权利要求1所述的新型封装的分立器件,其特征在于:所述绝缘散热板包括绝缘层及设置在绝缘层前后相对侧面上的金属导电层,所述绝缘层为氧化铝、氮化铝或氮化硅材料制成,所述金属导电层为铜或者铝材料制成。
3.根据权利要求2所述的新型封装的分立器件,其特征在于:所述金属连接件为分别设置在二极管芯片和场效应晶体管芯片上的金属垫片,所述第二金属引脚的一端通过两金属垫片依次与场效应晶体管芯片及二极管芯片固定连接,另一端向塑封外壳的外侧延伸。
4.根据权利要求2所述的新型封装的分立器件,其特征在于:所述金属连接件为连接二极管芯片和场效应晶体管芯片的若干金属引线,所述金属引线的形状为波浪形,所述第二金属引脚的一端通过金属引线依次与场效应晶体管芯片及二极管芯片固定连接,另一端向塑封外壳的外侧延伸。
5.根据权利要求3或4所述的新型封装的分立器件,其特征在于:所述场效应晶体管芯片及二极管芯片通过回流焊接方式与所述绝缘散热板固定连接。
6.根据权利要求5所述的新型封装的分立器件,其特征在于:所述塑封外壳的长度为25-30mm,宽度为15-20mm,厚度为3-6mm;所述绝缘散热板长度为20-25mm,宽度为12-16mm,厚度为0.5-1.5mm。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023000823A1 (zh) * | 2021-07-21 | 2023-01-26 | 嘉兴斯达半导体股份有限公司 | 一种功率半导体模块的新型封装结构 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004006603A (ja) * | 2002-03-26 | 2004-01-08 | Fuji Electric Holdings Co Ltd | 半導体パワーデバイス |
JP2009177038A (ja) * | 2008-01-28 | 2009-08-06 | Hitachi Ltd | パワー半導体モジュール |
CN102394235A (zh) * | 2011-11-15 | 2012-03-28 | 株洲南车时代电气股份有限公司 | 一种绝缘栅双极晶体管模块及其制作方法 |
CN104040715A (zh) * | 2012-02-09 | 2014-09-10 | 富士电机株式会社 | 半导体器件 |
CN107301955A (zh) * | 2010-09-24 | 2017-10-27 | 半导体元件工业有限责任公司 | 电路装置及其制造方法 |
CN108346651A (zh) * | 2017-01-23 | 2018-07-31 | 英飞凌科技股份有限公司 | 包括晶体管芯片、二极管芯片和驱动器芯片的半导体模块 |
CN210897260U (zh) * | 2019-11-20 | 2020-06-30 | 上海道之科技有限公司 | 新型封装的分立器件 |
-
2019
- 2019-11-20 CN CN201911141291.5A patent/CN110854096A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004006603A (ja) * | 2002-03-26 | 2004-01-08 | Fuji Electric Holdings Co Ltd | 半導体パワーデバイス |
JP2009177038A (ja) * | 2008-01-28 | 2009-08-06 | Hitachi Ltd | パワー半導体モジュール |
CN107301955A (zh) * | 2010-09-24 | 2017-10-27 | 半导体元件工业有限责任公司 | 电路装置及其制造方法 |
CN102394235A (zh) * | 2011-11-15 | 2012-03-28 | 株洲南车时代电气股份有限公司 | 一种绝缘栅双极晶体管模块及其制作方法 |
CN104040715A (zh) * | 2012-02-09 | 2014-09-10 | 富士电机株式会社 | 半导体器件 |
CN108346651A (zh) * | 2017-01-23 | 2018-07-31 | 英飞凌科技股份有限公司 | 包括晶体管芯片、二极管芯片和驱动器芯片的半导体模块 |
CN210897260U (zh) * | 2019-11-20 | 2020-06-30 | 上海道之科技有限公司 | 新型封装的分立器件 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023000823A1 (zh) * | 2021-07-21 | 2023-01-26 | 嘉兴斯达半导体股份有限公司 | 一种功率半导体模块的新型封装结构 |
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