CN110854096A - 一种新型封装的分立器件 - Google Patents

一种新型封装的分立器件 Download PDF

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CN110854096A
CN110854096A CN201911141291.5A CN201911141291A CN110854096A CN 110854096 A CN110854096 A CN 110854096A CN 201911141291 A CN201911141291 A CN 201911141291A CN 110854096 A CN110854096 A CN 110854096A
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metal
heat dissipation
effect transistor
field effect
dissipation plate
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房军军
封丹婷
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Shanghai Daozhi Technology Co Ltd
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    • HELECTRICITY
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49568Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • HELECTRICITY
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
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    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract

一种新型封装的分立器件,主要包括绝缘散热板及固定设置在绝缘散热板上的二极管芯片和场效应晶体管芯片,所述绝缘散热板靠近二极管芯片的一侧固定设置有作为输入端的第一金属引脚,所述二极管芯片及场效应晶体管芯片通过金属连接件设置有作为输出端的第二金属引脚;所述绝缘散热板、二极管芯片、场效应晶体管芯片包覆在塑封外壳内且所述绝缘散热板的外端暴露在塑封外壳外并与所述塑封外壳的外侧持平;所述场效应晶体管芯片上通过金属连接件设置有控制引脚;本发明将金属引脚位置进行优化,增加引脚间爬电距离,在总体上提高了散热效率,功率输出密度,抗冲击能力与绝缘可靠性,降低了安装和使用成本。

Description

一种新型封装的分立器件
技术领域
本发明属于电力电子学领域,具体涉及一种新型封装的分立器件。
背景技术
目前场效应晶体管模块在变频器,焊机,感应加热,不间断电源,风力发电与电动汽车领域的应用越来越广泛,以上的各领域对于分立器件来说,封装体积,功率密度,可靠性等各方面的要求也越来越严苛。
在传统的分立器件封装中,为良好的散热条件与功率密度之间平衡,塑封体均将一侧带电金属面外露;为方便安装还需在塑封体表面预留压块空间,或者贯通圆孔。导致安装过程中客户端需要加装绝缘垫片,提升了封装的接触热阻,降低了封装的散热效率与芯片的抗冲击能力。空间利用率的压缩导致功率密度无法提升。引脚间的间距短,长期使用过程中受环境影响更易产生爬电现象,降低了器件使用的安全性与可靠性。
发明内容
本发明要解决的技术问题在于,针对现有技术的上述缺陷,提供一种新封装的分立器件,以解决现有技术情况下散热面不带绝缘,散热效率低,功率密度低等问题。
本发明的目的是通过如下技术方案来完成的,一种新型封装的分立器件,主要包括绝缘散热板及固定设置在绝缘散热板上的二极管芯片和场效应晶体管芯片,所述绝缘散热板靠近二极管芯片的一侧固定设置有作为输入端的第一金属引脚,所述二极管芯片及场效应晶体管芯片通过金属连接件设置有作为输出端的第二金属引脚;所述绝缘散热板、二极管芯片、场效应晶体管芯片包覆在塑封外壳内且所述绝缘散热板的外端暴露在塑封外壳外并与所述塑封外壳的外侧持平;所述场效应晶体管芯片上通过金属连接件设置有控制引脚。
进一步地,所述绝缘散热板包括绝缘层及设置在绝缘层前后相对侧面上的金属导电层,所述绝缘层为氧化铝、氮化铝或氮化硅材料制成,所述金属导电层为铜或者铝材料制成。
进一步地,所述金属连接件为分别设置在二极管芯片和场效应晶体管芯片上的金属垫片,所述第二金属引脚的一端通过两金属垫片依次与场效应晶体管芯片及二极管芯片固定连接,另一端向塑封外壳的外侧延伸。
进一步地,所述金属连接件为连接二极管芯片和场效应晶体管芯片的若干金属引线,所述金属引线的形状为波浪形,所述第二金属引脚的一端通过金属引线依次与场效应晶体管芯片及二极管芯片固定连接,另一端向塑封外壳的外侧延伸。
进一步地,所述场效应晶体管芯片及二极管芯片通过回流焊接方式与所述绝缘散热板固定连接。
进一步地,所述塑封外壳的长度为25-30mm,宽度为15-20mm,厚度为3-6mm;所述绝缘散热板长度为20-25mm,宽度为12-16mm,厚度为0.5-1.5mm。
本发明的有益技术效果在于:本发明加大散热片面积并增加了绝缘设计,可直接在客户端安装至散热板;对芯片装载区域面积优化,提高封装的额定电流上限,并使用金属垫片对芯片进行双面焊接,增加热容;优化金属引脚位置,降低长期使用造成的爬电现象,加大金属引脚面积,提升过电流能力;在保证散热效率的情况下大幅度提升输出功率,安全性与可靠性。
附图说明
图1为本发明所述分立器件第一种实施例的侧面结构示意图;
图2为图1的局部放大结构示意图;
图3为本发明所述分立器件第一种实施例的正面结构示意图;
图4为本发明所述分立器件第二种实施例的侧面结构示意图;
图5为本发明所述分立器件第二种实施例的正面结构示意图。
具体实施方式
为使本领域的普通技术人员更加清楚地理解本发明的目的、技术方案和优点,以下结合附图和实施例对本发明做进一步的阐述。
如图1-5所示,本发明所述的一种新型封装的分立器件,主要包括绝缘散热板1及固定设置在绝缘散热板1上的二极管芯片2和场效应晶体管芯片3,所述绝缘散热板1长度为20-25mm,宽度为12-16mm,厚度为0.5-1.5mm,所述绝缘散热板1靠近二极管芯片2的一侧固定设置有作为输入端的第一金属引脚4,所述二极管芯片2及场效应晶体管芯片3通过金属连接件设置有作为输出端的第二金属引脚5;所述绝缘散热板1、二极管芯片2、场效应晶体管芯片3包覆在塑封外壳6内且所述绝缘散热板1的外端暴露在塑封外壳6外并与所述塑封外壳6的外侧持平;所述场效应晶体管芯片3上通过金属连接件设置有控制引脚7。在整体框架制造完成后通过外包覆塑封外壳6的方式,进行相对位置的固定,提高金属引脚之间的爬电距离与整体可靠性。
参照图2所示,所述绝缘散热板1包括绝缘层8及设置在绝缘层8前后相对侧面上的金属导电层9,所述绝缘层8为氧化铝、氮化铝或氮化硅材料制成,所述金属导电层9为铜或者铝材料制成。
参照图1所示,所述金属连接件为分别设置在二极管芯片2和场效应晶体管芯片3上的金属垫片10,所述第二金属引脚5的一端通过两金属垫片10依次与场效应晶体管芯片3及二极管芯片2固定连接,另一端向塑封外壳6的外侧延伸。
参照图4所示,所述金属连接件为连接二极管芯片2和场效应晶体管芯片3的若干金属引线11,所述金属引线11的形状为波浪形,所述第二金属引脚5的一端通过金属引线11依次与场效应晶体管芯片3及二极管芯片2固定连接,另一端向塑封外壳6的外侧延伸;金属引脚的材料为铝碳或铝碳化硅合金。
参照图1所示,所述场效应晶体管芯片3及二极管芯片2通过回流焊接方式与所述绝缘散热板1固定连接。所述塑封外壳6的长度为25-30mm,宽度为15-20mm,厚度为3-6mm;所述绝缘散热板长度为20-25mm,宽度为12-16mm,厚度为0.5-1.5mm。
本发明加大散热片面积并增加了绝缘设计,可直接在客户端安装至散热板;对芯片装载区域面积优化,提高封装的额定电流上限,并使用金属垫片对芯片进行双面焊接,增加热容;优化金属引脚位置,降低长期使用造成的爬电现象,加大金属引脚面积,提升过电流能力;在保证散热效率的情况下大幅度提升输出功率,安全性与可靠性。
本文中所描述的具体实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,但凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。

Claims (6)

1.一种新型封装的分立器件,其特征在于:主要包括绝缘散热板及固定设置在绝缘散热板上的二极管芯片和场效应晶体管芯片,所述绝缘散热板靠近二极管芯片的一侧固定设置有作为输入端的第一金属引脚,所述二极管芯片及场效应晶体管芯片通过金属连接件设置有作为输出端的第二金属引脚;所述绝缘散热板、二极管芯片、场效应晶体管芯片包覆在塑封外壳内且所述绝缘散热板的外端暴露在塑封外壳外并与所述塑封外壳的外侧持平;所述场效应晶体管芯片上通过金属连接件设置有控制引脚。
2.根据权利要求1所述的新型封装的分立器件,其特征在于:所述绝缘散热板包括绝缘层及设置在绝缘层前后相对侧面上的金属导电层,所述绝缘层为氧化铝、氮化铝或氮化硅材料制成,所述金属导电层为铜或者铝材料制成。
3.根据权利要求2所述的新型封装的分立器件,其特征在于:所述金属连接件为分别设置在二极管芯片和场效应晶体管芯片上的金属垫片,所述第二金属引脚的一端通过两金属垫片依次与场效应晶体管芯片及二极管芯片固定连接,另一端向塑封外壳的外侧延伸。
4.根据权利要求2所述的新型封装的分立器件,其特征在于:所述金属连接件为连接二极管芯片和场效应晶体管芯片的若干金属引线,所述金属引线的形状为波浪形,所述第二金属引脚的一端通过金属引线依次与场效应晶体管芯片及二极管芯片固定连接,另一端向塑封外壳的外侧延伸。
5.根据权利要求3或4所述的新型封装的分立器件,其特征在于:所述场效应晶体管芯片及二极管芯片通过回流焊接方式与所述绝缘散热板固定连接。
6.根据权利要求5所述的新型封装的分立器件,其特征在于:所述塑封外壳的长度为25-30mm,宽度为15-20mm,厚度为3-6mm;所述绝缘散热板长度为20-25mm,宽度为12-16mm,厚度为0.5-1.5mm。
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