CN101542697B - 高压双极-cmos-dmos集成电路器件及其模块形成方法 - Google Patents
高压双极-cmos-dmos集成电路器件及其模块形成方法 Download PDFInfo
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/443,745 US7719054B2 (en) | 2006-05-31 | 2006-05-31 | High-voltage lateral DMOS device |
| US11/443,745 | 2006-05-31 | ||
| PCT/US2007/012686 WO2007142937A2 (en) | 2006-05-31 | 2007-05-30 | High-voltage bipolar-cmos-dmos integrated circuit devices and modular methods of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101542697A CN101542697A (zh) | 2009-09-23 |
| CN101542697B true CN101542697B (zh) | 2012-01-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800279592A Expired - Fee Related CN101542697B (zh) | 2006-05-31 | 2007-05-30 | 高压双极-cmos-dmos集成电路器件及其模块形成方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (7) | US7719054B2 (enExample) |
| EP (1) | EP2044622A4 (enExample) |
| JP (1) | JP5321840B2 (enExample) |
| KR (10) | KR101260639B1 (enExample) |
| CN (1) | CN101542697B (enExample) |
| TW (1) | TWI374508B (enExample) |
| WO (1) | WO2007142937A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671706A (zh) * | 2018-12-25 | 2019-04-23 | 电子科技大学 | 一种基于p型外延的jcd集成器件及其制备方法 |
| CN109686736A (zh) * | 2018-12-25 | 2019-04-26 | 电子科技大学 | 一种基于n型外延的jcd集成器件及其制备方法 |
Families Citing this family (273)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9019670B2 (en) * | 1999-11-10 | 2015-04-28 | Texas Instruments Incorporated | Bi-directional ESD protection circuit |
| US7834421B2 (en) * | 2002-08-14 | 2010-11-16 | Advanced Analogic Technologies, Inc. | Isolated diode |
| US7956391B2 (en) | 2002-08-14 | 2011-06-07 | Advanced Analogic Technologies, Inc. | Isolated junction field-effect transistor |
| US8513087B2 (en) | 2002-08-14 | 2013-08-20 | Advanced Analogic Technologies, Incorporated | Processes for forming isolation structures for integrated circuit devices |
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- 2007-05-30 KR KR1020127033560A patent/KR101267770B1/ko not_active Expired - Fee Related
- 2007-05-30 CN CN2007800279592A patent/CN101542697B/zh not_active Expired - Fee Related
- 2007-05-30 KR KR1020127033564A patent/KR101268804B1/ko not_active Expired - Fee Related
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| CN109671706A (zh) * | 2018-12-25 | 2019-04-23 | 电子科技大学 | 一种基于p型外延的jcd集成器件及其制备方法 |
| CN109686736A (zh) * | 2018-12-25 | 2019-04-26 | 电子科技大学 | 一种基于n型外延的jcd集成器件及其制备方法 |
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