CN101218191A - 基材处理腔室的构件的局部表面退火 - Google Patents

基材处理腔室的构件的局部表面退火 Download PDF

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CN101218191A
CN101218191A CNA2006800252684A CN200680025268A CN101218191A CN 101218191 A CN101218191 A CN 101218191A CN A2006800252684 A CNA2006800252684 A CN A2006800252684A CN 200680025268 A CN200680025268 A CN 200680025268A CN 101218191 A CN101218191 A CN 101218191A
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A·巴特纳嗄
L·穆拉盖西
P·古帕拉克芮西曼
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Abstract

一种基材处理腔室构件具有一结构性本体，该结构性本体具有局部表面区域，该些局部表面区域具有经退火的微裂缝。该些经退火的微裂缝可以减少裂缝成长与增加碎裂阻抗性。在一制造方法中，该构件的结构性本体是藉由传统方式来形成，且一激光束被导引至该本体的局部表面区域上而持续足够时间以退火该些表面微裂缝。

Description

基材处理腔室的构件的局部表面退火
技术领域
本发明的实施例是有关于用于基材处理腔室的构件。
背景技术
基材处理腔室是用以在激化的制程气体中处理一基材(例如半导体晶片或显示器)。处理腔室典型地包含一围壁，围壁是包围住气体所被导入且被激化的制程区块。腔室可以被用以藉由化学或物理气相沉积而沉积材料在基材上、自基材蚀刻材料、植入材料于基材上、或转换基材层次(例如藉由氧化层次或形成氮化物)。腔室典型地包括许多内部腔室构件，例如基材支撑件、气体散布器、气体激化器(gas energizer)、与不同型式的衬里与屏蔽。例如，衬里与屏蔽可以为围绕住基材的圆柱形组件，以做为集聚环(focus ring)以导引与容纳基材附近的等离子、避免沉积在基材下方的构件或部分的沉积环、基材屏蔽、与腔室壁衬里。
陶瓷材料常常被用来形成内部腔室构件，特别是暴露至激化气体或等离子的构件，因此会处于高温与腐蚀。陶瓷材料(例如氧化铝与氧化硅)为结晶体，而氧化硅玻璃不具有长程次序。陶瓷材料典型地会对激化气体造成的腐蚀呈现良好阻抗性，因此其不需要如同金属合金时常被更换。陶瓷构件也可以减少腔室内的微粒产生，其中该些微粒是导因自构件的腐蚀。陶瓷构件也可以忍受高温而不会热裂解。石英构件对于会腐蚀其它材料的等离子(例如包含氟物种的等离子)尤其是有用的。
然而，陶瓷材料会造成易脆失能模式，且常常在腔室内使用中或在操纵构件的更换或清洁时破裂或缺口。非结晶与微结晶材料尤其是容易经由裂缝传播而造成易脆失能。在非结晶材料中(例如玻璃)，表面微裂缝(microcrack)会以原子次序传播，这是因为玻璃具有短程次序，而不具有任何长程次序。微结晶材料(例如石英)具有晶粒，该些晶粒具有表面，该表面具有通过单一晶粒的晶粒内微裂缝、在晶粒周围且沿着晶粒边界延伸的晶粒间微裂缝、以及切割横越邻近晶粒的晶粒横越微裂缝。当然，在石英的微结晶晶粒周围延伸的晶粒间微裂缝大致上为对于裂缝成长是最有害的，且常常导致构件的缺口与裂缝。
因此，具有由微结晶或非结晶陶瓷材料的陶瓷构件是所希望的，其中该陶瓷材料是呈现减少的缺口与裂缝。制造在使用期间是低失能率的这样的陶瓷构件也是进一步所希望的。陶瓷构件能够忍受腔室内激化气体环境而不会过度腐蚀或热裂解也是所希望的。
发明内容
一种基材处理腔室构件具有一结构性本体，该结构性本体具有局部表面区域，该些局部表面区域具有经退火的微裂缝。该些经退火的微裂缝可以减少裂缝成长与增加碎裂阻抗性。该构件的结构性本体被形成，且一激光束被导引至该构件的局部表面区域上而持续足够时间以退火该些表面微裂缝。这将会强化材料且增加构件的寿命。适当的激光包括有CO2与氩激光。该结构性本体可以由结晶陶瓷、玻璃、或玻璃-陶瓷材料所制成，例如该本体可以为由石英所制成的环。
附图说明
本发明的特征、态样与优点由以上叙述、随附权利要求及附图能够更加以了解，其中附图是绘示出本发明的实例。然而，必须了解的是，每一特征大致上能被使用在本发明中，不是仅有在特定图式中，并且本发明包括这些特征的组合，其中：
图1A为一由玻璃所制成的腔室构件的截面图，其显示出在玻璃表面中的微裂缝；
图1B为图1A的腔室构件被局部地激光处理以退火表面微裂缝之后的截面图；
图1C为一由石英所制成的腔室构件的截面图，其显示出沿着石英的晶粒与晶粒边界区域的微裂缝；
图1D为图1C的腔室构件被局部地激光处理以退火表面微裂缝之后的截面图；
图2为具有经激光处理的表面的石英环的截面图；
图3A与图3B分别为具有表面微裂缝的石英表面在激光处理之前与之后的光学显微图像；
图4为适用于腔室构件的局部表面退火的一激光退火设备示意图；
图5为使用图2的环的一基材处理腔室示意图；以及
图6为图5腔室中的支撑件组件的部分截面图，其中该支撑件组件是使用图2的环。
主要组件符号说明
20   构件          24   本体
25   环            26   表面
28   微裂缝        29   晶粒
30   内部侧壁      31   边界
34   内部轴        36   边缘
45   介电质        50   激光
54   来源          55   电源供应器
56   激光束        58   点
62   再聚焦镜      64   焦点
68   颤动镜        72   驱动马达
76   轴            82   开孔
90   聚焦系统      92   扫描镜
94   扫描系统      100  围壁
102  窗口          110  平台
114  马达          118  控制器
122  显示器        200  设备
215  基材          225  腔室
230  支撑件组件    235  制成区块
238  设备          240  夹盘
245  介电质        250  电极
260  气体出口      265  气体来源
270  电压供应器    275  气体激化器
280  基座          285  气体供应
290  气体来源      295  气体喷嘴
300  控制器        305  排气系统
310  节流阀        315  电极
320  磁场产生器
具体实施方式
如图1A-1D所示，一基材处理腔室构件20包含一具有局部表面区域26的结构本体24，其中该局部表面区域26具有微裂缝28。腔室构件20可以由陶瓷、玻璃或玻璃陶瓷材料(例如石英、氧化硅玻璃、氧化铝、氧化钛、氮化硅、氧化锆、与其它这样的材料)所制成。表面微裂缝28是在制造该构件的期间或之后被细微的尘粒或其它研磨材料撞击与磨损构件表面26所造成。图1A是显示一由玻璃所制成的构件20，其中玻璃为非结晶且具有短程原子次序而不具有长程原子次序。例如氧化硅玻璃在具有固定的硅与氧键结角度的个别氧化硅四面体内具有短程次序，但是氧化硅四面体能够以随机的键结角度而互相连接。在玻璃中，微裂缝是非常细微的，且以原子键结来终结。微结晶陶瓷材料(如图1C所示)为具有细微晶粒29的多结晶体，其中该些晶粒29具有微米大小的尺寸。在微结晶材料中，微裂缝28典型地在细微的晶粒29周围与/或沿着晶粒边界31而延伸，但是微裂缝28也可以切割横越单一或邻近的晶粒29。构件20上的表面微裂缝28用做为应力聚积物，其会造成施加的力量聚积在微裂缝28的尖端。因为微裂缝28的尺寸是非常小(在玻璃材料中为构件材料原子之间原子键结的等级，且在微结晶材料中为微米大小晶粒的等级)，所施加的应力是在裂缝尖端极度地被放大。这会造成快速灾难失能模式，其中即使仅是一小的施加力量或冲击，一部分构件20是容易地破裂或缺口。
在一示范性实施例中，构件20包含一形状为环25的结构本体24，如图2所示。环25包含具有微裂缝28的表面26。环25为环状，其具有一内部侧壁28与一外部侧壁30。内部侧壁28面对一内部轴34，其中结构本体是围绕该内部轴34而具有旋转的对称性。环25的形状是用以保护或符合于一处理腔室的一区块、腔室构件、或腔室内的基材。例如，构件20可以为一衬里或屏蔽，其为一圆柱形组件，其尺寸能嵌合在正在腔室内被处理的基材周围。屏蔽20可以为一包围住基材的石英器具。构件20也可以为一沉积环、掩蔽环(shadow ring)或遮覆环(cover ring)。其它的腔室构件包含腔室壁衬里。
构件20的结构本体24上的表面微裂缝28是被退火以修复且密封住微裂缝，如图1B与图1D所示，以减少裂缝传播且增加构件20的碎裂阻抗性。在一实施例中，一激光束在足够高的强度下被导引至构件20的局部表面区域26上持续一足够时间，以软化且修复微裂缝28周围的区域26。激光束是用以选择性地加热构件20的局部表面区域。局部表面区域26为使用期间倾向于碎裂的区域，或其在制造期间具有过量的微裂缝(例如，在构件制造的操作期间会由所施加外力而渐渐地研磨与磨损的区域)。是以，局部表面区域位在环25的平坦顶表面上。局部表面区域26也可以包括构件20在操作与使用期间更容易遭受所施加应力的区域。例如，当环25在使用一预定次数制成循环之后而被移动以清洁或更换时，用在腔室20内的石英环25的边缘36常常碎裂或破裂。边缘36(也可以包括角落)在使用中常常容易破裂或碎裂。因此，增加石英环的区域26的碎裂强度可以显著地增加其制程寿命。
激光束能量与束特征(例如集聚强度)、束形状、与束直径可以被控制，以在高于用来修复表面微裂缝28的微裂缝修复温度而选择性地加热构件20的局部表面区域的一浅部分。在一实施例中，一激光束是被用以加热构件20的局部表面区域26的一薄表面层次，其中该薄表面层次具有小于500微米(典型地为小于100微米)的深度。集聚的激光束是选择性地加热构件20的局部表面区域26至高于裂缝修复温度的温度，而不过度地升高构件的主体温度(其可能会造成构件20的扭曲或热碎裂)。在加热构件20的薄表面层次之后，快速淬冷(rapid quenching)热表面仅在藉由将热传导出表面而进入周围环境而发生。因为仅有一非常浅部分的局部表面区域26被激光束所加热，藉由自然传导或对流的淬冷速度相当快。
虽然激光束加热处理是被描述做为一示范性退火制程，其它退火制程也可以被使用。例如，替代性的退火制程包括有等离子喷射加热(plasma jetheating)、电性电弧加热(electrical arc heating)、火焰加热。是以，本发明的范围应该不受限在在此所叙述的示范性态样，并且本发明包括熟习该技艺人士所能了解的其它局部表面退火制程与设备。
微裂缝形成制程是实质上部分或全部地逆行退火步骤。藉由激光被供应至微裂缝表面的局部热能量会造成局部被加热区域的软化与熔化，致使微裂缝28密封住且关闭住，如图1B与图1D所示。可以相信的是，在非晶形或玻璃材料中(如图1A与图1B所示)，微裂缝修复制程会被增强，这是因为作用横越微裂缝28的尖端的原子力量在整个微裂缝平面上倾向于拉引回裂缝表面而接触。在微结晶材料中(如图1C与图1D所示)，晶粒边界区域31常常包含少量作用为熔化剂的杂质，其会致使微裂缝表面的更快速熔化与最终修复。
激光退火处理的效应是被显示在图3A与图3B中，其分别为包含表面微裂缝的石英表面在激光处理之前与之后的光学显微图像。图3A显示具有大量微裂缝的石英表面，该些微裂缝是对应至较轻颜色的晶粒表面区域之间的黑线。在图3B中，其为经激光处理的样品的照片，所显示出的是，大部分表面微裂缝已经消失而提供了一平顺与连续的表面。必须注意的是，一凹处标记是被人工地制作在石英样品的中心。然而，凹处标记的大小是石英材料的表面粗糙性的等级，因此在图3A中的原始未处理的石英材料是无法看见。然而，在图3B的激光处理过的样品照片中，经部分修复的凹处标记是可以看见为一模糊黑点，这是因为激光处理过的样品的表面为平顺且不具有表面微裂缝与粗糙性。
腔室构件的表面微裂缝退火实质上也会增加被退火材料的硬度与碎裂应力，这会显著地增加其对形成缺口与破裂的阻抗性。在硬度测试中，一增加的负载是使用一具有已知几何形状的微压痕机(micro-indenter)而被垂直地施加至样品表面的平面。接着，该负载被减少而直到样品表面部分或全部地松弛，并且量测压痕深度。然后，负载被渐进地增加，且压痕与测量过程被重复而直到危及硬度为止且样品破裂。维克氏硬度(Vickershardness)是以公式H＝Pmax/Ac而被计算出，其中Pmax为破裂之前承受的最大负载，且Ac为压痕机接触的投射面积。硬度是使用一纳米硬度测试机(Nano Hardness Tester)来测量。所施加的负载为纳米牛顿等级，且位移是使用一微分电容传感器(differential capacitor sensor)而被精确地决定。一原始未处理的石英样品与一被激光退火的石英样品皆被测量。未处理的样品的平均维克氏硬度指数(mean Vickers hardness index)约为771.68，且已激光退火的石英样品的平均维克氏硬度指数约为951.68。是以，被激光退火的石英样品具有比未处理样品更硬至少约10％(更佳为至少约25％)的维克氏硬度。
另一表露出所增加破裂与缺口阻抗性的测量为碎裂应力测量(fracturestress measurement)。陶瓷材料因为其易脆特性而常常是在一折弯或弯曲测试中(而非张力测试)被测试。陶瓷材料因为碎裂而失能的应力被称为碎裂应力或该材料的碎裂强度。未处理与已激光退火的石英样品的碎裂应力是藉由使用在根据ASTM C1161-90的万能试验机(Universal TestingMachine)上的四点弯曲测试而被比较。碎裂的负载与样品截面积被用以自公式σ＝负载/wxt而计算出应力碎裂，其中wxt为所被施加负载于其上的截面积。未处理的石英样品的平均碎裂应力为86.23MPa，且已激光退火的石英样品的平均碎裂应力为132.27MPa。因此，已激光退火的石英样品的平均碎裂应力是比未处理样品高至少约25％，更佳为高至少约50％。
因此，一构件20的局部表面区域26中的微裂缝28的退火可以显著地增加构件20的表面平顺性、硬度与碎裂强度。缺乏或减少构件20表面中(尤其是易遭受所施加应力或仅是容易脆裂的区域，例如构件的突出部、角落与边缘)的微裂缝28可以实质上增加构件20的破裂与形成缺口的阻抗性。有益的是，表面退火可以允许所选择表面区域26的修复与增加强度，而不使整个构件20承受高温，其中该高温会造成结构变形或其它热裂解。然而，整个构件也可以藉由适当的热处理而被退火。
构件20的局部表面区域26中的微裂缝28的退火可以使用一激光退火设备50而被执行，激光退火设备50的一示范性实施例是显示在图4。激光退火设备50包含一激光束围壁52，该围壁52是包围住被一电源供应器55所给予动力的激光束来源54。能够用在微裂缝退火的适当的激光束来源54包括有例如Ar、CO2与KrF激光。一氩激光会传送在约5145埃的可见波长。一CO2激光为具有10.6微米波长的一红外线能量来源，且可以提供具有10千瓦功率的束。CO2激光是比氩激光更有效率100多被，且具有更大强度，而允许了比氩激光更快的扫描速度与更大的点尺寸。一CO2激光是被描述在公元1972年11月14日所发证的美国专利US3,702,973中，其在此被并入本文以做为参考。另一种型式激光为KrF激光，其具有约248纳米的波长、5.0eV的Eg、约3％的效率、与350mJ的输出能量。激光束典型地为一圆形束，其具有典型地小于约10毫米束直径，更典型地为介于0.5毫米至4毫米之间。是以，适当的激光束可以具有介于约190纳米至约10600纳米的波长。激光典型地是被操作在介于约5瓦特至约10000瓦特的功率位准。
激光50产生聚焦在一主要焦点58的激光束56，且藉由一再聚焦镜62而被再成像至一次要焦点84，其中该再聚焦镜62是提供了一更大的焦距。再聚焦镜62与次要焦点64之间为连接至一颤动驱动马达72的颤动镜(dithering mirror)68，该颤动驱动马达72会将颤动镜68震动于一预定的频率。颤动驱动马达72会将颤动镜68围绕一轴76而震动，该轴76是实质上位在镜68的平面且横断于被镜所聚焦的入射激光束56。自颤动镜68放射出的颤动束是空间地振荡(oscillate)成横断于图1平面的一弧线。
典型地，激光束56具有横越束直径的一强度分布(其也被称为强度轮廓或束的强度形状)，其是依据束50的型式而定。一般的束轮廓形状为一高斯形状，且典型地为一U形强度轮廓。激光束的聚焦会改变束的截面尺寸，但是不会改变其维持为高斯或U形的束强度分布。一种修正激光束的高斯或U形截面为空间地振荡该激光束56，亦被称为颤动。激光束56的空间振荡可以为正弦、锯齿状、或方形波。激光束56的空间振荡或颤动在颤动束所扫描过的区域中产生一平均与更均匀的强度的辐射。在一实施例中，激光束56在其焦点具有一约高斯分布，且空间振荡或颤动为正弦。颤动是藉由颤动镜76而被产生，其中该颤动镜76是在轴76上往复振荡，该轴是平行于镜76的平面且横断于颤动平面。典型地，颤动束是覆盖住至少两倍于未颤动束的区域。对于正弦颤动，在投射至局部表面区域上的颤动束的每一点的平均强度大约是中心区域为平坦，且在相对端具有尖峰。颤动束的最终强度轮廓的形状像是一方形波，且提供了一良好的强度轮廓以连续、重迭的扫视来扫描横越过局部表面区域。然而，其它束形状(例如正弦波形)也可以与适当地补偿激光扫描方法一同被使用。
接着，颤动束会通过一束宽控制开孔80，其在第二焦点84具有一可控制或预定的固定开孔82。开孔80是位于颤动镜76与第二聚焦系统90之间，其中该第二聚焦系统90可以为一扫描镜或透镜。镜68的轴76可以横断或平行于图1平面。然后，束被投射至被一扫描系统94所驱动的扫描镜92上。扫描系统94会在轴96上将镜92予以振荡，以在一选定的局部区域100上方往复地扫视且扫描束56，其中该局部区域100是位在正被处理的腔室构件100上。扫描束会通过围壁100中的一窗口102。扫描镜92的扫视速度典型地是小于颤动镜68的颤动频率。例如，一具有约500微米束直径的聚焦CO2激光可以在介于约1毫米/秒至约100毫米/秒之间被扫描。
扫描系统沟通于被一平台马达114所驱动的X-Y可移动平台110。平台110也可以适用以滑动于Z或垂直方向，以改变入射在构件上的束宽度。扫描系统94将扫描镜92的扫描速度与平台110的移动同步化，及因此置放在平台110上的腔室构件的移动，以均匀地扫描横越构件的颤动与穿孔的束。扫描参数是被选定以均匀地加热束所被扫描横越的局部表面区域，其是藉由调整扫描速度与图案以补偿激光束的形状。例如，束56的强度分布可以包含围绕一中心最大值的环与甚至一束中间的凹处(其是导因自靠近于束的场环状特征)。再者，也希望能重迭束扫描，以补偿任何在激光束的截面强度中的变异，若激光束是以光栅型式扫描来扫视横越表面而不使束扫描重迭，热处理的深度可以依据束形状而横越束扫描地改变。
激光束退火设备50更包含一控制器118，其是控制系统的操作且连接至电源供应器55，其中该电源供应器55是施予动力给激光54、颤动驱动马达72与扫描系统94。在输入参数中，控制器118是接收来自一使用者输入装置的输入，且显示出输入参数及扫描系统信息于显示器122上。控制器118可以为一传统的计算机，其具有连接至适当内存装置(包括随机存取内存与磁盘中的储存内存、及适配卡与总线)的中央处理单元(CPU)。激光束退火设备50能够将横越构件表面的局部表面区域予以激光退火，其中该构件表面在整个表面区域具有良好均匀性。
被退火以减少或修复微裂缝的构件20可以被用在一基材处理设备200中(如图5所示)，其是用以制造基材215(例如半导体晶片与显示器)。设备200可以为MxP、MxP Super E、或eMax型式的蚀刻腔室，其可由美国加州Santa Clara的Applied Materials Inc.所获得，且大体上被描述于共同受让给Cheng等人的美国专利案号US4,842,683与US5,215,619及Maydan等人的美国专利案号US4,668,338中，这些专利是在此被并入本文以做为参考。一示范性设备200可被用在一多腔室整合系统中以处理半导体基材，如Maydan等人的美国专利US4,951,601中所描述的，其是在此被并入本文以做为参考。
一般而言，设备200包含一处理腔室225，以及辅助控制、电性、配管与支撑构件。一包含支撑件238的支撑组件230是被提供以在一制程区块235中接收基材215。支撑件238可以为一静电夹盘240，该静电夹盘240包含至少部分地覆盖住一电极250的一介电质245，且具有气体出口260，一热传送气体(例如氦)可以经由气体导管270自一热传送气体来源265通过该气体出口260以控制基材215的温度。替代性地，支撑件238可以为一真空或机械夹盘或任何其它该技艺中所熟知的支撑件。电极250是被一电极电压供应器275所电性充电，以静电地固持住基材215。一位在静电夹盘240下方的基座280可以选择性地包含一热交换器，例如一热交换流体可以被循环通过的通道。
制程气体经由一气体供应285被导入腔室225，该气体供应285包括一气体来源290与一或多个终止于腔室225内的气体喷嘴295。气体喷嘴295可以位在基材215的周围(如图所示)，或在一装设于腔室顶的喷洒头内(未显示)。一气体流控制器300被用已控制制程气体的流速。耗用的制程气体与副产物经由一排气系统305而自腔室225被排放。排气系统305典型地包含连接到数个泵(例如粗抽泵或高真空泵)的一排气导管，该些泵可以排放腔室225中的气体。一节流阀310被提供在排气导管中，以控制腔室225内的气体压力。
一激化气体(例如一气体等离子)被一气体激化器275自制程气体所产生，该气体激化器275是耦接电磁能(例如RF或微波能量)至腔室225的制程区块235中的制程气体。例如，气体激化器275可以包含第一制程电极315(例如电性接地的侧壁或腔室顶)，以及第二电极(其可以为介电质245中的电极250)。第一与第二电极315、250是彼此相对而被一电极电压供应器270提供的RF电压施予电性偏压。所施加至电极315、250的RF电压的频率典型地介于约50KHz至约60KHz之间。在其它态样中，气体激化器275也可以包括一诱导器天线(未显示)，其包含一或多个线圈以感应地耦合RF能量至腔室225。被电容地产生的等离子可以藉由在磁性强化反应器(magnetically enhanced reactor)中的电子回旋共振而被增强，其中一磁场产生器320(例如一永久磁铁或电磁线圈)是提供磁场于腔室225内，该腔室225具有具一轴的旋转磁场，该轴是旋转平行于基材215的平面。
腔室225也可以包含一或多个制程监视系统(未显示)以监视正被执行在基材215上的制程。典型的制程监视系统包含一干涉系统(其会测量自基材215上正被处理层次所反射的光强度)，或一等离子放射系统(其会测量腔室225中气体物种的光放射强度的改变)。制程监视系统是有用的，其能侦测正被执行在基材215上的制程的终点。
已激光退火的构件20(例如环25)是被嵌合在腔室225内的支撑件组件230的基材支撑件238周围。环25可以藉由避免使介电质245接触于腔室225内的激化制程气体而保护支撑件组件230(例如静电夹盘240的介电质245)不被腐蚀。替代性地，环25在支撑件组件230中可以具有其它用途。
请参阅图6，额外的结构(例如包围住环25的项圈210)也可以被激光退火以减少表面微裂缝。项圈210可以由一陶瓷材料(例如氧化铝或氧化硅)所制成。项圈210是做为一屏蔽，其与环一起为用于腔室的可更换的制程套件。其它环状结构(例如腔室壁衬里)也可以被激光退火，且也可以用在腔室225的制程套件的部件。
虽然本发明的示范性实施例已经被显示且被描述，熟习该技艺的人士可以构想出其它包含本发明且位于本发明范围内的实施例。例如，已退火的腔室构件20可以来自腔室225的顶或室壁腔室构件。此外，表面退火的替代性方法也可以被使用。再者，关于示范性实施例的相对或位置的用语是可以交替的。因此，随附权利要求不应该被受限在本文所描述以说明本发明的较佳态样、材料或空间配置的叙述。

Claims (12)

1.一种具有一结构性本体的基材处理腔室构件，其至少包含具有经退火的微裂缝的局部表面区域，藉此该些经退火的微裂缝可以减少裂缝成长且增加碎裂阻抗性。
2.如权利要求1所述的构件，更包含经激光退火的微裂缝的局部表面区域。
3.如权利要求1所述的构件，更包含经CO2激光退火的微裂缝的局部表面区域。
4.如权利要求1所述的构件，其中该结构性本体具有围绕一内部轴的旋转对称性。
5.如权利要求1所述的构件，其中该结构性本体由一陶瓷、玻璃、或玻璃-陶瓷材料所制成。
6.如权利要求1所述的构件，其中该结构性本体包含石英。
7.如权利要求1所述的构件，其中该局部表面区域为该结构性本体的表面或边缘。
8.如权利要求1所述的构件，其中该结构性本体包含以下的至少一个：(i)比未处理本体高至少约10％的平均维克氏硬度(mean Vickershardness)；或(ii)比未处理本体高至少约25％的平均碎裂应力。
9.如权利要求1所述的构件，其中该结构性本体包含一环、平板、或圆柱体。
10.一种制造基材处理腔室构件的方法，该方法至少包含：
(a)形成具有一结构性本体的构件；以及
(b)导引一激光束至该构件的局部表面区域上而持续一足够时间，以退火在该些局部表面区域上的微裂缝，
藉此经退火的微裂缝可以减少裂缝成长与增加碎裂阻抗性。
11.如权利要求10所述的方法，更包含以下的至少一个：
(i)扫描该激光束横越该些局部表面区域；或
(ii)以CO2激光产生该激光束。
12.如权利要求10所述的方法，更包含导引具有以下性质的至少一个的激光束：
(i)介于约190纳米至约10600纳米之间的波长；或
(ii)介于约5瓦特至约10000瓦特之间的功率位准。
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CN110416062A (zh) * 2018-04-27 2019-11-05 半导体元件工业有限责任公司 半导体衬底裂纹缓解系统和相关方法
CN112195317A (zh) * 2020-10-15 2021-01-08 温州大学 一种异构结构高熵合金的冷轧复合激光表面退火工艺方法

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TW200710998A (en) 2007-03-16
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US20070014949A1 (en) 2007-01-18

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