TWI417961B - 用於基材處理腔室之構件的局部表面退火 - Google Patents
用於基材處理腔室之構件的局部表面退火 Download PDFInfo
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Description
本發明之實施例係有關於用於基材處理腔室之構件。
基材處理腔室係用以在激化之製程氣體中處理一基材(例如半導體晶圓或顯示器)。處理腔室典型地包含一圍壁,圍壁係包圍住氣體所被導入且被激化之製程區塊。腔室可以被用以藉由化學或物理氣相沈積而沈積材料在基材上、自基材蝕刻材料、植入材料於基材上、或轉換基材層次(例如藉由氧化層次或形成氮化物)。腔室典型地包括許多內部腔室構件,例如基材支撐件、氣體散佈器、氣體激化器(gas energizer)、與不同型式之襯裡與屏蔽。例如,襯裡與屏蔽可以為圍繞住基材之圓柱形元件,以做為集聚環(focus ring)以導引與容納基材附近之電漿、避免沈積在基材下方之構件或部分的沈積環、基材屏蔽、與腔室壁襯裡。
陶瓷材料常常被用來形成內部腔室構件,特別是暴露至激化氣體或電漿之構件,因此會處於高溫與腐蝕。陶瓷材料(例如氧化鋁與氧化矽)為結晶體,而氧化矽玻璃不具有長程次序。陶瓷材料典型地會對激化氣體造成的腐蝕呈現良好阻抗性,因此其不需要如同金屬合金時常被更換。陶瓷構件也可以減少腔室內之微粒產生,其中該些微粒係導因自構件之腐蝕。陶瓷構件也可以忍受高溫而不會熱裂解。石英構件對於會腐蝕其他材料的電漿(例如包含氟物種之電漿)尤其是有用的。
然而,陶瓷材料會造成易脆失能模式,且常常在腔室內使用中或在操縱構件之更換或清潔時破裂或缺口。非結晶與微結晶材料尤其是容易經由裂縫傳播而造成易脆失能。在非結晶材料中(例如玻璃),表面微裂縫(microcrack)會以原子次序傳播,這是因為玻璃具有短程次序,而不具有任何長程次序。微結晶材料(例如石英)具有晶粒,該些晶粒具有表面,該表面具有通過單一晶粒之晶粒內微裂縫、在晶粒周圍且沿著晶粒邊界延伸之晶粒間微裂縫、以及切割橫越鄰近晶粒之晶粒橫越微裂縫。當然,在石英之微結晶晶粒周圍延伸之晶粒間微裂縫大致上為對於裂縫成長是最有罪的,且常常導致構件之缺口與裂縫。
因此,具有由微結晶或非結晶陶瓷材料製成之一陶瓷構件是所希望的,其中該陶瓷材料係呈現減少的缺口與裂縫。製造在使用期間係低失能率之這樣的陶瓷構件也是進一步所希望的。陶瓷構件能夠忍受腔室內激化氣體環境而不會過度腐蝕或熱裂解也是所希望的。
一種基材處理腔室構件具有一結構性本體,該結構性本體具有局部表面區域,該些局部表面區域具有經退火之微裂縫。該些經退火之微裂縫可以減少裂縫成長與增加碎裂阻抗性。該構件之結構性本體被形成,且一雷射束被導引至該構件之局部表面區域上而持續足夠時間以退火該些表面微裂縫。這將會強化材料且增加構件之壽命。適當的雷射包括有CO2
與氬雷射。該結構性本體可以由結晶陶瓷、玻璃、或玻璃-陶瓷材料所製成,例如該本體可以為由石英所製成之一環。
如第1A-1D圖所示,一基材處理腔室構件20包含一具有局部表面區域26之結構本體24,其中該局部表面區域26具有微裂縫28。腔室構件20可以由陶瓷、玻璃或玻璃陶瓷材料(例如石英、氧化矽玻璃、氧化鋁、氧化鈦、氮化矽、氧化鋯、與其他這樣的材料)所製成。表面微裂縫28是在製造該構件的期間或之後被細微的塵粒或其他研磨材料撞擊與磨損構件表面26所造成。第1A圖係顯示一由玻璃所製成之構件20,其中玻璃為非結晶且具有短程原子次序而不具有長程原子次序。例如氧化矽玻璃在具有固定的矽與氧鍵結角度之個別氧化矽四面體內具有短程次序,但是氧化矽四面體能夠以隨機的鍵結角度而互相連接。在玻璃中,微裂縫是非常細微的,且以原子鍵結來終結。微結晶陶瓷材料(如第1C圖所示)為具有細微晶粒29之多結晶體,其中該些晶粒29具有微米大小之尺寸。在微結晶材料中,微裂縫28典型地在細微的晶粒29周圍與/或沿著晶粒邊界31而延伸,但是微裂縫28也可以切割橫越單一或鄰近的晶粒29。構件20上之表面微裂縫28用做為應力聚積物,其會造成施加的力量聚積在微裂縫28之尖端。因為微裂縫28之尺寸是非常小(在玻璃材料中為構件材料原子之間原子鍵結的等級,且在微結晶材料中為微米大小晶粒的等級),所施加的應力係在裂縫尖端極度地被放大。這會造成快速災難失能模式,其中即使僅是一小的施加力量或衝擊,一部分構件20係容易地破裂或缺口。
在一示範性實施例中,構件20包含一形狀為環25之結構本體24,如第2圖所示。環25包含具有微裂縫28之表面26。環25為環狀,其具有一內部側壁28與一外部側壁30。內部側壁28面對一內部軸34,其中結構本體係圍繞該內部軸34而具有旋轉的對稱性。環25之形狀係用以保護或符合於一處理腔室之一區塊、腔室構件、或腔室內之基材。例如,構件20可以為一襯裡或屏蔽,其為一圓柱形元件,其尺寸能嵌合在正在腔室內被處理的基材周圍。屏蔽20可以為一包圍住基材之石英器具。構件20也可以為一沈積環、掩蔽環(shadow ring)或遮覆環(cover ring)。其他的腔室構件包含腔室壁襯裡。
構件20之結構本體24上的表面微裂縫28係被退火以修復且密封住微裂縫,如第1B圖與第1D圖所示,以減少裂縫傳播且增加構件20之碎裂阻抗性。在一實施例中,一雷射束在足夠高的強度下被導引至構件20之局部表面區域26上持續一足夠時間,以軟化且修復微裂縫28周圍之區域26。雷射束係用以選擇性地加熱構件20之局部表面區域。局部表面區域26為使用期間傾向於碎裂之區域,或其在製造期間具有過量的微裂縫(例如,在構件製造之操作期間會由所施加外力而漸漸地研磨與磨損之區域)。是以,局部表面區域位在環25之平坦頂表面上。局部表面區域26也可以包括構件20在操作與使用期間更容易遭受所施加應力之區域。例如,當環25在使用一預定次數製程循環之後而被移動以清潔或更換時,用在腔室20內的石英環25之邊緣36常常碎裂或破裂。邊緣36(也可以包括角落)在使用中常常容易破裂或碎裂。因此,增加石英環之區域26的碎裂強度可以顯著地增加其製程壽命。
雷射束能量與束特徵(例如集聚長度)、束形狀、與束直徑可以被控制,以在高於用來修復表面微裂縫28之微裂縫修復溫度而選擇性地加熱構件20之局部表面區域的一淺部分。在一實施例中,一雷射束係被用以加熱構件20之局部表面區域26的一薄表面層次,其中該薄表面層次具有小於500微米(典型地為小於100微米)之深度。集聚之雷射束係選擇性地加熱構件20之局部表面區域26至高於裂縫修復溫度之溫度,而不過度地升高構件之主體溫度(其可能會造成構件20之扭曲或熱碎裂)。在加熱構件20之薄表面層次之後,快速淬冷(rapid quenching)熱表面僅在藉由將熱傳導出表面而進入周圍環境而發生。因為僅有一非常淺部分之局部表面區域26被雷射束所加熱,藉由自然傳導或對流之淬冷速度相當快。
雖然雷射束加熱處理係被描述做為一示範性退火製程,其他退火製程也可以被使用。例如,替代性之退火製程包括有電漿噴射加熱(plasma jet heating)、電性電弧加熱(electrical arc heating)、火焰加熱。是以,本發明之範圍應該不受限在在此所敘述的示範性態樣,並且本發明包括熟習該技藝人士所能瞭解之其他局部表面退火製程與設備。
微裂縫形成製程係實質上部分或全部地逆行退火步驟。藉由雷射被供應至微裂縫表面之局部熱能量會造成局部被加熱區域的軟化與熔化,致使微裂縫28密封住且關閉住,如第1B圖與第1D圖所示。吾人相信的是,在非晶形或玻璃材料中(如第1A圖與第1B圖所示),微裂縫修復製程會被增強,這是因為作用橫越微裂縫28之尖端的原子力量在整個微裂縫平面上傾向於拉引回裂縫表面而接觸。在微結晶材料中(如第1C圖與第1D圖所示),晶粒邊界區域31常常包含少量作用為熔化劑之雜質,其會致使微裂縫表面之更快速熔化與最終修復。
雷射退火處理之效應係被顯示在第3A圖與第3B圖中,其分別為包含表面微裂縫之石英表面在雷射處理之前與之後的光學顯微圖像。第3A圖顯示具有大量微裂縫之石英表面,該些微裂縫係對應至較輕顏色的晶粒表面區域之間的黑線。在第3B圖中,其為經雷射處理之樣品的照片,所顯示出的是,大部分表面微裂縫已經消失而提供了一平順與連續的表面。必須注意的是,一凹處標記係被人工地製作在石英樣品之中心。然而,凹處標記的大小是石英材料之表面粗糙性的等級,因此在第3A圖中之原始未處理的石英材料是無法看見。然而,在第3B圖之雷射處理過的樣品照片中,經部分修復的凹處標記是可以看見為一模糊黑點,這是因為雷射處理過的樣品之表面為平順且不具有表面微裂縫與粗糙性。
腔室構件之表面微裂縫退火實質上也會增加被退火材料之硬度與碎裂應力,這會顯著地增加其對形成缺口與破裂的阻抗性。在硬度測試中,一增加的負載係使用一具有已知幾何形狀的微壓痕機(micro-indenter)而被垂直地施加至樣品表面之平面。接著,該負載被減少而直到樣品表面部分或全部地鬆弛,並且量測壓痕深度。然後,負載被漸進地增加,且壓痕與測量過程被重複而直到危及硬度為止且樣品破裂。維克氏硬度(Vickers hardness)係以公式H=Pm a x
/Ac
而被計算出,其中Pm a x
為破裂之前承受的最大負載,且Ac
為壓痕機接觸之投射面積。硬度係使用一奈米硬度測試機(Nano Hardness Tester)來測量。所施加的負載為奈米牛頓等級,且位移係使用一微分電容感測器(differential capacitor sensor)而被精確地決定。一原始未處理之石英樣品與一被雷射退火之石英樣品皆被測量。未處理之樣品的平均維克氏硬度指數(mean Vickers hardness index)約為771.68,且已雷射退火之石英樣品的平均維克氏硬度指數約為951.68。是以,被雷射退火之石英樣品具有比未處理樣品更硬至少約10%(更佳為至少約25%)之維克氏硬度。
另一表露出所增加破裂與缺口阻抗性的測量為碎裂應力測量(fracture stress measurement)。陶瓷材料因為其易脆特性而常常是在一折彎或彎曲測試中(而非張力測試)被測試。陶瓷材料因為碎裂而失能之應力被稱為碎裂應力或該材料的碎裂強度。未處理與已雷射退火之石英樣品的碎裂應力係藉由使用在根據ASTM C1161-90之萬能試驗機(Universal Testing Machine)上的四點彎曲測試而被比較。碎裂的負載與樣品截面積被用以自公式σ=負載/wxt而計算出應力碎裂,其中wxt為所被施加負載於其上的截面積。未處理之石英樣品之平均碎裂應力為86.23MPa,且已雷射退火之石英樣品的平均碎裂應力為132.27MPa。因此,已雷射退火之石英樣品的平均碎裂應力係比未處理樣品高至少約25%,更佳為高至少約50%。
因此,一構件20之局部表面區域26中的微裂縫28的退火可以顯著地增加構件20之表面平順性、硬度與碎裂強度。缺乏或減少構件20表面中(尤其是易遭受所施加應力或僅是容易脆裂的區域,例如構件之突出部、角落與邊緣)之微裂縫28可以實質上增加構件20之破裂與形成缺口的阻抗性。有益的是,表面退火可以允許所選擇表面區域26之修復與增加強度,而不使整個構件20承受高溫,其中該高溫會造成結構變形或其他熱裂解。然而,整個構件也可以藉由適當的熱處理而被退火。
構件20之局部表面區域26中之微裂縫28的退火可以使用一雷射退火設備50而被執行,雷射退火設備50之一示範性實施例係顯示在第4圖。雷射退火設備50包含一雷射束圍壁52,該圍壁52係包圍住被一電源供應器55所給予動力的雷射束來源54。能夠用在微裂縫退火之適當的雷射束來源54包括有例如Ar、CO2與KrF雷射。一氬雷射會傳送在約5145埃之可見波長。一CO2雷射為具有10.6微米波長之一紅外線能量來源,且可以提供具有10千瓦功率之束。CO2雷射係比氬雷射更有效率100多倍,且具有更大強度,而允許了比氬雷射更快之掃描速度與更大之點尺寸。一CO2雷射係被描述在西元1972年11月14日所發證之美國專利US3,702,973中,其在此被併入本文以做為參考。另一種型式雷射為KrF雷射,其具有約248奈米之波長、5.0eV之Eg、約3%之效率、與350mJ之輸出能量。雷射束典型地為一圓形束,其具有典型地小於約10毫米束直徑,更典型地為介於0.5毫米至4毫米之間。是以,適當的雷射束可以具有介於約190奈米至約10600奈米的波長。雷射典型地是被操作在介於約5瓦特至約10000瓦特之功率位準。
雷射50產生聚焦在一主要焦點58之雷射束56,且藉由一再聚焦鏡62而被再成像至一次要焦點84,其中該再聚焦鏡62係提供了一更大的焦距。再聚焦鏡62與次要焦點64之間為連接至一顫動驅動馬達72之顫動鏡(dithering mirror)68,該顫動驅動馬達72會將顫動鏡68震動於一預定的頻率。顫動驅動馬達72會將顫動鏡68圍繞一軸76而震動,該軸76係實質上位在鏡68之平面且橫斷於被鏡所聚焦的入射雷射束56。自顫動鏡68放射出之顫動束係空間地振盪(oscillatc)成橫斷於第1圖平面之一弧線。
典型地,雷射束56具有橫越束直徑之一強度分佈(其也被稱為強度輪廓或束之強度形狀),其係依據束50的型式而定。一般的束輪廓形狀為一高斯形狀,且典型地為一U形強度輪廓。雷射束之聚焦會改變束之截面尺寸,但是不會改變其維持為高斯或U形之束強度分佈。一種修正雷射束之高斯或U形截面為空間地振盪該雷射束56,亦被稱為顫動。雷射束56之空間振盪可以為正弦、鋸齒狀、或方形波。雷射束56之空間振盪或顫動在顫動束所掃描過之區域中產生一平均與更均勻的強度之輻射。在一實施例中,雷射束56在其焦點具有一約高斯分佈,且空間振盪或顫動為正弦。顫動是藉由顫動鏡76而被產生,其中該顫動鏡76係在軸76上往復振盪,該軸係平行於鏡76之平面且橫斷於顫動平面。典型地,顫動束係覆蓋住至少兩倍於未顫動束之區域。對於正弦顫動,在投射至局部表面區域上之顫動束的每一點之平均強度大約是中心區域為平坦,且在相對端具有尖峰。顫動束之最終強度輪廓的形狀像是一方形波,且提供了一良好的強度輪廓以連續、重疊的掃視來掃描橫越過局部表面區域。然而,其他束形狀(例如正弦波形)也可以與適當地補償雷射掃描方法一同被使用。
接著,顫動束會通過一束寬控制開孔80,其在第二焦點84具有一可控制或預定之固定開孔82。開孔80係位於顫動鏡76與第二聚焦系統90之間,其中該第二聚焦系統90可以為一掃描鏡或透鏡。鏡68之軸76可以橫斷或平行於第1圖平面。然後,束被投射至被一掃描系統94所驅動之掃描鏡92上。掃描系統94會在軸96上將鏡92予以振盪,以在一選定的局部區域100上方往復地掃視且掃描束56,其中該局部區域100係位在正被處理的腔室構件100上。掃描束會通過圍壁100中之一視窗102。掃描鏡92之掃視速度典型地是小於顫動鏡68之顫動頻率。例如,一具有約500微米束直徑之聚焦CO2雷射可以在介於約1毫米/秒至約100毫米/秒之間被掃描。
掃描系統溝通於被一平臺馬達114所驅動之X-Y可移動平臺110。平臺110也可以適用以滑動於Z或垂直方向,以改變入射在構件上的束寬度。掃描系統94將掃描鏡92之掃描速度與平臺110之移動(及因此置放在平臺110上之腔室構件之移動)同步化,以均勻地掃描橫越構件之顫動與穿孔的束。掃描參數係被選定以均勻地加熱束所被掃描橫越之局部表面區域,其係藉由調整掃描速度與圖案以補償雷射束之形狀。例如,束56之強度分佈可以包含圍繞一中心最大值之環與甚至一束中間之凹處(其係導因自靠近於束之場環狀特徵)。再者,也希望能重疊束掃描,以補償任何在雷射束之截面強度中的變異,若雷射束係以光柵型式掃描來掃視橫越表面而不使束掃描重疊,熱處理之深度可以依據束形狀而橫越束掃描地改變。
雷射束退火設備50更包含一控制器118,其係控制系統之操作且連接至電源供應器55,其中該電源供應器55係施予動力給雷射54、顫動驅動馬達72與掃描系統94。在輸入參數中,控制器118係接收來自一使用者輸入裝置之輸入,且顯示出輸入參數及掃描系統資訊於顯示器122上。控制器118可以為一傳統的電腦,其具有連接至適當記憶體裝置(包括隨機存取記憶體與磁碟中之儲存記憶體、及介面卡與匯流排)之中央處理單元(CPU)。雷射束退火設備50能夠將橫越構件表面之局部表面區域予以雷射退火,其中該構件表面在整個表面區域具有良好均勻性。
被退火以減少或修復微裂縫之構件20可以被用在一基材處理設備200中(如第5圖所示),其係用以製造基材215(例如半導體晶圓與顯示器)。設備200可以為MxP、MxP Super E、或eMax型式之蝕刻腔室,其可由美國加州Santa Clara之Applied Materials Inc.所獲得,且大體上被描述於共同受讓給Cheng等人之美國專利案號US4,842,683與US5,215,619及Maydan等人之美國專利案號US4,668,338中,這些專利係在此被併入本文以做為參考。一示範性設備200可被用在一多腔室整合系統中以處理半導體基材,如Maydan等人之美國專利US4,951,601中所描述者,其係在此被併入本文以做為參考。
一般而言,設備200包含一處理腔室225,以及輔助控制、電性、配管與支撐構件。一包含支撐件238之支撐組件230係被提供以在一製程區塊235中接收基材215。支撐件238可以為一靜電夾盤240,該靜電夾盤240包含至少部分地覆蓋住一電極250之一介電質245,且具有氣體出口260,一熱傳送氣體(例如氦)可以經由氣體導管270自一熱傳送氣體來源265通過該氣體出口260以控制基材215之溫度。替代性地,支撐件238可以為一真空或機械夾盤或任何其他該技藝中所熟知之支撐件。電極250係被一電極電壓供應器275所電性充電,以靜電地固持住基材215。一位在靜電夾盤240下方之基座280可以選擇性地包含一熱交換器,例如一熱交換流體可以被循環通過之通道。
製程氣體經由一氣體供應285被導入腔室225,該氣體供應285包括一氣體來源290與一或多個終止於腔室225內之氣體噴嘴295。氣體噴嘴295可以位在基材215之周圍(如圖所示),或在一裝設於腔室頂之噴灑頭內(未顯示)。一氣體流控制器300被用以控制製程氣體之流速。耗用之製程氣體與副產物經由一排氣系統305而自腔室225被排放。排氣系統305典型地包含連接到複數個幫浦(例如粗抽幫浦或高真空幫浦)之一排氣導管,該些幫浦可以排放腔室225中之氣體。一節流閥310被提供在排氣導管中,以控制腔室225內之氣體壓力。
一激化氣體(例如一氣體電漿)被一氣體激化器275自製程氣體所產生,該氣體激化器275係耦接電磁能(例如RF或微波能量)至腔室225之製程區塊235中的製程氣體。例如,氣體激化器275可以包含第一製程電極315(例如電性接地之側壁或腔室頂),以及第二電極(其可以為介電質245中之電極250)。第一與第二電極315、250係彼此相對而被一電極電壓供應器270提供的RF電壓施予電性偏壓。所施加至電極315、250之RF電壓的頻率典型地介於約50KHz至約60KHz之間。在其他態樣中,氣體激化器275也可以包括一誘導器天線(未顯示),其包含一或多個線圈以感應地耦合RF能量至腔室225。被電容地產生之電漿可以藉由在磁性強化反應器(magnetically enhanced reactor)中之電子迴旋共振而被增強,其中一磁場產生器320(例如一永久磁鐵或電磁線圈)係提供磁場於腔室225內,該腔室225具有具一軸的旋轉磁場,該軸係旋轉平行於基材215之平面。
腔室225也可以包含一或多個製程監視系統(未顯示)以監視正被執行在基材215上之製程。典型的製程監視系統包含一干涉系統(其會測量自基材215上正被處理層次所反射的光強度),或一電漿放射系統(其會測量腔室225中氣體物種之光放射強度的改變)。製程監視系統是有用的,其能偵測正被執行在基材215上之製程的終點。
已雷射退火之構件20(例如環25)係被嵌合在腔室225內之支撐件組件230的基材支撐件238周圍。環25可以藉由避免使介電質245接觸於腔室225內之激化製程氣體而保護支撐件組件230(例如靜電夾盤240之介電質245)不被腐蝕。替代性地,環25在支撐件組件230中可以具有其他用途。
請參閱第6圖,額外的結構(例如包圍住環25之項圈210)也可以被雷射退火以減少表面微裂縫。項圈210可以由一陶瓷材料(例如氧化鋁或氧化矽)所製成。項圈210係做為一屏蔽,其與環一起為用於腔室之可更換的製程套件。其他環狀結構(例如腔室壁襯裡)也可以被雷射退火,且也可以用在腔室225之製程套件的部件。
雖然本發明之示範性實施例已經被顯示且被描述,熟習該技藝之人士可以構想出其他包含本發明且位於本發明範圍內之實施例。例如,已退火之腔室構件20可以來自腔室225之頂或室壁腔室構件。此外,表面退火之替代性方法也可以被使用。再者,關於示範性實施例之相對或位置的用語是可以交替的。因此,隨附申請專利範圍不應該被受限在本文所描述以說明本發明之較佳態樣、材料或空間配置之敘述。
20...構件
24...本體
25...環
26...表面
28...微裂縫
29...晶粒
30...內部側壁
31...邊界
34...內部軸
36...邊緣
45...介電質
50...雷射
54...來源
55...電源供應器
56...雷射束
58...點
62...再聚焦鏡
64...焦點
68...顫動鏡
72...驅動馬達
76...軸
82...開孔
90...聚焦系統
92...掃描鏡
94...掃描系統
100...圍壁
102...視窗
110...平臺
114...馬達
118...控制器
122...顯示器
200...設備
215...基材
225...腔室
230...支撐件組件
235...製成區塊
238...設備
240...夾盤
245...介電質
250...電極
260...氣體出口
265...氣體來源
270...電壓供應器
275...氣體激化器
280...基座
285...氣體供應
290...氣體來源
295...氣體噴嘴
300...控制器
305...排氣系統
310...節流閥
315...電極
320...磁場產生器
本發明之特徵、態樣與優點由以上敘述、隨附申請專利範圍及附圖能夠更加以瞭解,其中附圖係繪示出本發明之實例。然而,必須瞭解的是,每一特徵大致上能被使用在本發明中,不是僅有在特定圖式中,並且本發明包括這些特徵之組合,其中:第1A圖為一由玻璃所製成之腔室構件的截面圖,其顯示出在玻璃表面中之微裂縫;第1B圖為第1A圖之腔室構件被局部地雷射處理以退火表面微裂縫之後的截面圖;第1C圖為一由石英所製成之腔室構件的截面圖,其顯示出沿著石英之晶粒與晶粒邊界區域之微裂縫;第1D圖為第1C圖之腔室構件被局部地雷射處理以退火表面微裂縫之後的截面圖;第2圖為具有經雷射處理之表面之石英環的截面圖;第3A圖與第3B圖分別為具有表面微裂縫之石英表面在雷射處理之前與之後的光學顯微圖像;第4圖為適用於腔室構件之局部表面退火的一雷射退火設備示意圖;第5圖為使用第2圖之環的一基材處理腔室示意圖;以及第6圖為第5圖腔室中之支撐件組件的部分截面圖,其中該支撐件組件係使用第2圖之環。
20...構件
24...本體
25...環
26...表面
200...設備
215...基材
225...腔室
230...支撐件組件
235...製成區塊
238...設備
240...夾盤
245...介電質
250...電極
260...氣體出口
265...氣體來源
270...電壓供應器
275...氣體激化器
280...基座
285...氣體供應
290...氣體來源
295...氣體噴嘴
300...控制器
305...排氣系統
310...節流閥
315...電極
320...磁場產生器
Claims (11)
- 一種具有一結構性本體之基材處理腔室構件,該結構性本體由石英組成且至少包含局部表面區域,該些局部表面區域具有微結晶晶粒以及在該些微結晶晶粒周圍延伸之晶粒間微裂縫,該構件至少包含:(i)經退火之晶粒間微裂縫,該些經退火之晶粒間微裂縫係自己密封住,以使得該些經退火之晶粒間微裂縫的表面會接觸,及(ii)比未處理結構性本體之維克氏硬度高至少約10%之平均維克氏硬度。
- 如申請專利範圍第1項所述之構件,更包含具有經雷射退火之微裂縫的局部表面區域。
- 如申請專利範圍第1項所述之構件,更包含具有經CO2雷射退火之微裂縫的局部表面區域。
- 如申請專利範圍第1項所述之構件,其中該結構性本體具有圍繞一內部軸之旋轉對稱性。
- 如申請專利範圍第1項所述之構件,其中該局部表面區域為該結構性本體之表面或邊緣。
- 如申請專利範圍第1項所述之構件,其中該結構性本體包含比未處理本體高至少約25%之平均碎裂應力。
- 如申請專利範圍第1項所述之構件,其中該結構性本體包含一環、平板、或圓柱體。
- 一種製造一基材處理腔室構件之方法,該方法至少包含:(a)形成具有一結構性本體之一構件,該結構性本體由石英組成且至少包含局部表面區域,該些局部表面區域具有微結晶晶粒以及在該些微結晶晶粒周圍延伸之晶粒間微裂縫;以及(b)導引一雷射束至該構件之局部表面區域上以加熱一局部表面區域之淺部分而持續一足夠時間,使得該些晶粒間微裂縫自己修復且密封住,以致該些晶粒間微裂縫的表面會接觸,其中該結構性本體包含比未處理結構性本體高至少10%之平均維克氏硬度。
- 如申請專利範圍第8項所述之方法,更包含以下之至少一者:(i)掃描該雷射束橫越該些局部表面區域;或(ii)以一CO2雷射產生該雷射束。
- 如申請專利範圍第8項所述之方法,更包含導引一具有以下性質之至少一者的雷射束:(i)介於約190奈米至約10600奈米之間的波長;或(ii)介於約5瓦特至約10000瓦特之間的功率位準。
- 如申請專利範圍第8項所述之方法,其中該結構性本體包含一環、平板、或圓柱體。
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WO2007008999A2 (en) | 2007-01-18 |
US9481608B2 (en) | 2016-11-01 |
EP1902003A2 (en) | 2008-03-26 |
CN101218191A (zh) | 2008-07-09 |
KR20080033181A (ko) | 2008-04-16 |
WO2007008999A3 (en) | 2007-04-26 |
KR101278217B1 (ko) | 2013-06-24 |
US20070014949A1 (en) | 2007-01-18 |
CN101218191B (zh) | 2011-12-28 |
EP1902003B1 (en) | 2018-04-25 |
US8617672B2 (en) | 2013-12-31 |
US20140167327A1 (en) | 2014-06-19 |
JP2009501452A (ja) | 2009-01-15 |
TW200710998A (en) | 2007-03-16 |
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