CN101218191B - 基材处理腔室的构件的局部表面退火 - Google Patents

基材处理腔室的构件的局部表面退火 Download PDF

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CN101218191B
CN101218191B CN2006800252684A CN200680025268A CN101218191B CN 101218191 B CN101218191 B CN 101218191B CN 2006800252684 A CN2006800252684 A CN 2006800252684A CN 200680025268 A CN200680025268 A CN 200680025268A CN 101218191 B CN101218191 B CN 101218191B
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A·巴特纳嗄
L·穆拉盖西
P·古帕拉克芮西曼
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Abstract

一种基材处理腔室构件具有一结构性本体，该结构性本体具有局部表面区域，该些局部表面区域具有经退火的微裂缝。该些经退火的微裂缝可以减少裂缝成长与增加碎裂阻抗性。在一制造方法中，该构件的结构性本体是藉由传统方式来形成，且一激光束被导引至该本体的局部表面区域上而持续足够时间以退火该些表面微裂缝。

Description

基材处理腔室的构件的局部表面退火
技术领域
本发明的实施例是有关于用于基材处理腔室的构件。
背景技术
基材处理腔室是用以在激化的制程气体中处理一基材(例如半导体晶片或显示器)。处理腔室典型地包含一围壁，围壁是包围住气体所被导入且被激化的制程区块。腔室可以被用以藉由化学或物理气相沉积而沉积材料在基材上、自基材蚀刻材料、植入材料于基材上、或转换基材层次(例如藉由氧化层次或形成氮化物)。腔室典型地包括许多内部腔室构件，例如基材支撑件、气体散布器、气体激化器(gas energizer)、与不同型式的衬里与屏蔽。例如，衬里与屏蔽可以为围绕住基材的圆柱形组件，以做为集聚环(focus ring)以导引与容纳基材附近的等离子、避免沉积在基材下方的构件或部分的沉积环、基材屏蔽、与腔室壁衬里。
陶瓷材料常常被用来形成内部腔室构件，特别是暴露至激化气体或等离子的构件，因此会处于高温与腐蚀。陶瓷材料(例如氧化铝与氧化硅)为结晶体，而氧化硅玻璃不具有长程次序。陶瓷材料典型地会对激化气体造成的腐蚀呈现良好阻抗性，因此其不需要如同金属合金时常被更换。陶瓷构件也可以减少腔室内的微粒产生，其中该些微粒是导因自构件的腐蚀。陶瓷构件也可以忍受高温而不会热裂解。石英构件对于会腐蚀其它材料的等离子(例如包含氟物种的等离子)尤其是有用的。
然而，陶瓷材料会造成易脆失能模式，且常常在腔室内使用中或在操纵构件的更换或清洁时破裂或缺口。非结晶与微结晶材料尤其是容易经由裂缝传播而造成易脆失能。在非结晶材料中(例如玻璃)，表面微裂缝(microcrack)会以原子次序传播，这是因为玻璃具有短程次序，而不具有任何长程次序。微结晶材料(例如石英)具有晶粒，该些晶粒具有表面，该表面具有通过单一晶粒的晶粒内微裂缝、在晶粒周围且沿着晶粒边界延伸的晶粒间微裂缝、以及切割横越邻近晶粒的晶粒横越微裂缝。当然，在石英的微结晶晶粒周围延伸的晶粒间微裂缝大致上为对于裂缝成长是最有害的，且常常导致构件的缺口与裂缝。
因此，具有由微结晶或非结晶陶瓷材料的陶瓷构件是所希望的，其中该陶瓷材料是呈现减少的缺口与裂缝。制造在使用期间是低失能率的这样的陶瓷构件也是进一步所希望的。陶瓷构件能够忍受腔室内激化气体环境而不会过度腐蚀或热裂解也是所希望的。
发明内容
一种基材处理腔室构件具有一结构性本体，该结构性本体具有局部表面区域，该些局部表面区域具有经退火的微裂缝。该些经退火的微裂缝可以减少裂缝成长与增加碎裂阻抗性。该构件的结构性本体被形成，且一激光束被导引至该构件的局部表面区域上而持续足够时间以退火该些表面微裂缝。这将会强化材料且增加构件的寿命。适当的激光包括有CO2与氩激光。该结构性本体可以由结晶陶瓷、玻璃、或玻璃-陶瓷材料所制成，例如该本体可以为由石英所制成的环。
附图说明
本发明的特征、态样与优点由以上叙述、随附权利要求及附图能够更加以了解，其中附图是绘示出本发明的实例。然而，必须了解的是，每一特征大致上能被使用在本发明中，不是仅有在特定图式中，并且本发明包括这些特征的组合，其中：
图1A为一由玻璃所制成的腔室构件的截面图，其显示出在玻璃表面中的微裂缝；
图1B为图1A的腔室构件被局部地激光处理以退火表面微裂缝之后的截面图；
图1C为一由石英所制成的腔室构件的截面图，其显示出沿着石英的晶粒与晶粒边界区域的微裂缝；
图1D为图1C的腔室构件被局部地激光处理以退火表面微裂缝之后的截面图；
图2为具有经激光处理的表面的石英环的截面图；
图3A与图3B分别为具有表面微裂缝的石英表面在激光处理之前与之后的光学显微图像；
图4为适用于腔室构件的局部表面退火的一激光退火设备示意图；
图5为使用图2的环的一基材处理腔室示意图；以及
图6为图5腔室中的支撑件组件的部分截面图，其中该支撑件组件是使用图2的环。
主要组件符号说明
20   构件          24   本体
25   环            26   表面
28   微裂缝        29   晶粒
30   内部侧壁      31   边界
34   内部轴        36   边缘
45   介电质        50   激光
54   来源          55   电源供应器
56   激光束        58   点
62   再聚焦镜      64   焦点
68   颤动镜        72   驱动马达
76   轴            82   开孔
90   聚焦系统      92   扫描镜
94   扫描系统      100  围壁
102  窗口          110  平台
114  马达          118  控制器
122  显示器        200  设备
215  基材          225  腔室
230  支撑件组件    235  制成区块
238  设备          240  夹盘
245  介电质        250  电极
260  气体出口      265  气体来源
270  电压供应器    275  气体激化器
280  基座          285  气体供应
290  气体来源      295  气体喷嘴
300  控制器        305  排气系统
310  节流阀        315  电极
320  磁场产生器
具体实施方式
如图1A-1D所示，一基材处理腔室构件20包含一具有局部表面区域26的结构本体24，其中该局部表面区域26具有微裂缝28。腔室构件20可以由陶瓷、玻璃或玻璃陶瓷材料(例如石英、氧化硅玻璃、氧化铝、氧化钛、氮化硅、氧化锆、与其它这样的材料)所制成。表面微裂缝28是在制造该构件的期间或之后被细微的尘粒或其它研磨材料撞击与磨损构件表面26所造成。图1A是显示一由玻璃所制成的构件20，其中玻璃为非结晶且具有短程原子次序而不具有长程原子次序。例如氧化硅玻璃在具有固定的硅与氧键结角度的个别氧化硅四面体内具有短程次序，但是氧化硅四面体能够以随机的键结角度而互相连接。在玻璃中，微裂缝是非常细微的，且以原子键结来终结。微结晶陶瓷材料(如图1C所示)为具有细微晶粒29的多结晶体，其中该些晶粒29具有微米大小的尺寸。在微结晶材料中，微裂缝28典型地在细微的晶粒29周围与/或沿着晶粒边界31而延伸，但是微裂缝28也可以切割横越单一或邻近的晶粒29。构件20上的表面微裂缝28用做为应力聚积物，其会造成施加的力量聚积在微裂缝28的尖端。因为微裂缝28的尺寸是非常小(在玻璃材料中为构件材料原子之间原子键结的等级，且在微结晶材料中为微米大小晶粒的等级)，所施加的应力是在裂缝尖端极度地被放大。这会造成快速灾难失能模式，其中即使仅是一小的施加力量或冲击，一部分构件20是容易地破裂或缺口。
在一示范性实施例中，构件20包含一形状为环25的结构本体24，如图2所示。环25包含具有微裂缝28的表面26。环25为环状，其具有一内部侧壁28与一外部侧壁30。内部侧壁28面对一内部轴34，其中结构本体是围绕该内部轴34而具有旋转的对称性。环25的形状是用以保护或符合于一处理腔室的一区块、腔室构件、或腔室内的基材。例如，构件20可以为一衬里或屏蔽，其为一圆柱形组件，其尺寸能嵌合在正在腔室内被处理的基材周围。屏蔽20可以为一包围住基材的石英器具。构件20也可以为一沉积环、掩蔽环(shadow ring)或遮覆环(cover ring)。其它的腔室构件包含腔室壁衬里。
构件20的结构本体24上的表面微裂缝28是被退火以修复且密封住微裂缝，如图1B与图1D所示，以减少裂缝传播且增加构件20的碎裂阻抗性。在一实施例中，一激光束在足够高的强度下被导引至构件20的局部表面区域26上持续一足够时间，以软化且修复微裂缝28周围的区域26。激光束是用以选择性地加热构件20的局部表面区域。局部表面区域26为使用期间倾向于碎裂的区域，或其在制造期间具有过量的微裂缝(例如，在构件制造的操作期间会由所施加外力而渐渐地研磨与磨损的区域)。是以，局部表面区域位在环25的平坦顶表面上。局部表面区域26也可以包括构件20在操作与使用期间更容易遭受所施加应力的区域。例如，当环25在使用一预定次数制成循环之后而被移动以清洁或更换时，用在腔室20内的石英环25的边缘36常常碎裂或破裂。边缘36(也可以包括角落)在使用中常常容易破裂或碎裂。因此，增加石英环的区域26的碎裂强度可以显著地增加其制程寿命。
激光束能量与束特征(例如集聚强度)、束形状、与束直径可以被控制，以在高于用来修复表面微裂缝28的微裂缝修复温度而选择性地加热构件20的局部表面区域的一浅部分。在一实施例中，一激光束是被用以加热构件20的局部表面区域26的一薄表面层次，其中该薄表面层次具有小于500微米(典型地为小于100微米)的深度。集聚的激光束是选择性地加热构件20的局部表面区域26至高于裂缝修复温度的温度，而不过度地升高构件的主体温度(其可能会造成构件20的扭曲或热碎裂)。在加热构件20的薄表面层次之后，快速淬冷(rapid quenching)热表面仅在藉由将热传导出表面而进入周围环境而发生。因为仅有一非常浅部分的局部表面区域26被激光束所加热，藉由自然传导或对流的淬冷速度相当快。
虽然激光束加热处理是被描述做为一示范性退火制程，其它退火制程也可以被使用。例如，替代性的退火制程包括有等离子喷射加热(plasma jetheating)、电性电弧加热(electrical arc heating)、火焰加热。是以，本发明的范围应该不受限在在此所叙述的示范性态样，并且本发明包括熟习该技艺人士所能了解的其它局部表面退火制程与设备。
微裂缝形成制程是实质上部分或全部地逆行退火步骤。藉由激光被供应至微裂缝表面的局部热能量会造成局部被加热区域的软化与熔化，致使微裂缝28密封住且关闭住，如图1B与图1D所示。可以相信的是，在非晶形或玻璃材料中(如图1A与图1B所示)，微裂缝修复制程会被增强，这是因为作用横越微裂缝28的尖端的原子力量在整个微裂缝平面上倾向于拉引回裂缝表面而接触。在微结晶材料中(如图1C与图1D所示)，晶粒边界区域31常常包含少量作用为熔化剂的杂质，其会致使微裂缝表面的更快速熔化与最终修复。
激光退火处理的效应是被显示在图3A与图3B中，其分别为包含表面微裂缝的石英表面在激光处理之前与之后的光学显微图像。图3A显示具有大量微裂缝的石英表面，该些微裂缝是对应至较轻颜色的晶粒表面区域之间的黑线。在图3B中，其为经激光处理的样品的照片，所显示出的是，大部分表面微裂缝已经消失而提供了一平顺与连续的表面。必须注意的是，一凹处标记是被人工地制作在石英样品的中心。然而，凹处标记的大小是石英材料的表面粗糙性的等级，因此在图3A中的原始未处理的石英材料是无法看见。然而，在图3B的激光处理过的样品照片中，经部分修复的凹处标记是可以看见为一模糊黑点，这是因为激光处理过的样品的表面为平顺且不具有表面微裂缝与粗糙性。
腔室构件的表面微裂缝退火实质上也会增加被退火材料的硬度与碎裂应力，这会显著地增加其对形成缺口与破裂的阻抗性。在硬度测试中，一增加的负载是使用一具有已知几何形状的微压痕机(micro-indenter)而被垂直地施加至样品表面的平面。接着，该负载被减少而直到样品表面部分或全部地松弛，并且量测压痕深度。然后，负载被渐进地增加，且压痕与测量过程被重复而直到危及硬度为止且样品破裂。维克氏硬度(Vickershardness)是以公式H＝Pmax/Ac而被计算出，其中Pmax为破裂之前承受的最大负载，且Ac为压痕机接触的投射面积。硬度是使用一纳米硬度测试机(Nano Hardness Tester)来测量。所施加的负载为纳米牛顿等级，且位移是使用一微分电容传感器(differential capacitor sensor)而被精确地决定。一原始未处理的石英样品与一被激光退火的石英样品皆被测量。未处理的样品的平均维克氏硬度指数(mean Vickers hardness index)约为771.68，且已激光退火的石英样品的平均维克氏硬度指数约为951.68。是以，被激光退火的石英样品具有比未处理样品更硬至少约10％(更佳为至少约25％)的维克氏硬度。
另一表露出所增加破裂与缺口阻抗性的测量为碎裂应力测量(fracturestress measurement)。陶瓷材料因为其易脆特性而常常是在一折弯或弯曲测试中(而非张力测试)被测试。陶瓷材料因为碎裂而失能的应力被称为碎裂应力或该材料的碎裂强度。未处理与已激光退火的石英样品的碎裂应力是藉由使用在根据ASTM C1161-90的万能试验机(Universal TestingMachine)上的四点弯曲测试而被比较。碎裂的负载与样品截面积被用以自公式σ＝负载/wxt而计算出应力碎裂，其中wxt为所被施加负载于其上的截面积。未处理的石英样品的平均碎裂应力为86.23MPa，且已激光退火的石英样品的平均碎裂应力为132.27MPa。因此，已激光退火的石英样品的平均碎裂应力是比未处理样品高至少约25％，更佳为高至少约50％。
因此，一构件20的局部表面区域26中的微裂缝28的退火可以显著地增加构件20的表面平顺性、硬度与碎裂强度。缺乏或减少构件20表面中(尤其是易遭受所施加应力或仅是容易脆裂的区域，例如构件的突出部、角落与边缘)的微裂缝28可以实质上增加构件20的破裂与形成缺口的阻抗性。有益的是，表面退火可以允许所选择表面区域26的修复与增加强度，而不使整个构件20承受高温，其中该高温会造成结构变形或其它热裂解。然而，整个构件也可以藉由适当的热处理而被退火。
构件20的局部表面区域26中的微裂缝28的退火可以使用一激光退火设备50而被执行，激光退火设备50的一示范性实施例是显示在图4。激光退火设备50包含一激光束围壁52，该围壁52是包围住被一电源供应器55所给予动力的激光束来源54。能够用在微裂缝退火的适当的激光束来源54包括有例如Ar、CO2与KrF激光。一氩激光会传送在约5145埃的可见波长。一CO2激光为具有10.6微米波长的一红外线能量来源，且可以提供具有10千瓦功率的束。CO2激光是比氩激光更有效率100多被，且具有更大强度，而允许了比氩激光更快的扫描速度与更大的点尺寸。一CO2激光是被描述在公元1972年11月14日所发证的美国专利US3,702,973中，其在此被并入本文以做为参考。另一种型式激光为KrF激光，其具有约248纳米的波长、5.0eV的Eg、约3％的效率、与350mJ的输出能量。激光束典型地为一圆形束，其具有典型地小于约10毫米束直径，更典型地为介于0.5毫米至4毫米之间。是以，适当的激光束可以具有介于约190纳米至约10600纳米的波长。激光典型地是被操作在介于约5瓦特至约10000瓦特的功率位准。
激光50产生聚焦在一主要焦点58的激光束56，且藉由一再聚焦镜62而被再成像至一次要焦点84，其中该再聚焦镜62是提供了一更大的焦距。再聚焦镜62与次要焦点64之间为连接至一颤动驱动马达72的颤动镜(dithering mirror)68，该颤动驱动马达72会将颤动镜68震动于一预定的频率。颤动驱动马达72会将颤动镜68围绕一轴76而震动，该轴76是实质上位在镜68的平面且横断于被镜所聚焦的入射激光束56。自颤动镜68放射出的颤动束是空间地振荡(oscillate)成横断于图1平面的一弧线。
典型地，激光束56具有横越束直径的一强度分布(其也被称为强度轮廓或束的强度形状)，其是依据束50的型式而定。一般的束轮廓形状为一高斯形状，且典型地为一U形强度轮廓。激光束的聚焦会改变束的截面尺寸，但是不会改变其维持为高斯或U形的束强度分布。一种修正激光束的高斯或U形截面为空间地振荡该激光束56，亦被称为颤动。激光束56的空间振荡可以为正弦、锯齿状、或方形波。激光束56的空间振荡或颤动在颤动束所扫描过的区域中产生一平均与更均匀的强度的辐射。在一实施例中，激光束56在其焦点具有一约高斯分布，且空间振荡或颤动为正弦。颤动是藉由颤动镜76而被产生，其中该颤动镜76是在轴76上往复振荡，该轴是平行于镜76的平面且横断于颤动平面。典型地，颤动束是覆盖住至少两倍于未颤动束的区域。对于正弦颤动，在投射至局部表面区域上的颤动束的每一点的平均强度大约是中心区域为平坦，且在相对端具有尖峰。颤动束的最终强度轮廓的形状像是一方形波，且提供了一良好的强度轮廓以连续、重迭的扫视来扫描横越过局部表面区域。然而，其它束形状(例如正弦波形)也可以与适当地补偿激光扫描方法一同被使用。
接着，颤动束会通过一束宽控制开孔80，其在第二焦点84具有一可控制或预定的固定开孔82。开孔80是位于颤动镜76与第二聚焦系统90之间，其中该第二聚焦系统90可以为一扫描镜或透镜。镜68的轴76可以横断或平行于图1平面。然后，束被投射至被一扫描系统94所驱动的扫描镜92上。扫描系统94会在轴96上将镜92予以振荡，以在一选定的局部区域100上方往复地扫视且扫描束56，其中该局部区域100是位在正被处理的腔室构件100上。扫描束会通过围壁100中的一窗口102。扫描镜92的扫视速度典型地是小于颤动镜68的颤动频率。例如，一具有约500微米束直径的聚焦CO2激光可以在介于约1毫米/秒至约100毫米/秒之间被扫描。
扫描系统沟通于被一平台马达114所驱动的X-Y可移动平台110。平台110也可以适用以滑动于Z或垂直方向，以改变入射在构件上的束宽度。扫描系统94将扫描镜92的扫描速度与平台110的移动同步化，及因此置放在平台110上的腔室构件的移动，以均匀地扫描横越构件的颤动与穿孔的束。扫描参数是被选定以均匀地加热束所被扫描横越的局部表面区域，其是藉由调整扫描速度与图案以补偿激光束的形状。例如，束56的强度分布可以包含围绕一中心最大值的环与甚至一束中间的凹处(其是导因自靠近于束的场环状特征)。再者，也希望能重迭束扫描，以补偿任何在激光束的截面强度中的变异，若激光束是以光栅型式扫描来扫视横越表面而不使束扫描重迭，热处理的深度可以依据束形状而横越束扫描地改变。
激光束退火设备50更包含一控制器118，其是控制系统的操作且连接至电源供应器55，其中该电源供应器55是施予动力给激光54、颤动驱动马达72与扫描系统94。在输入参数中，控制器118是接收来自一使用者输入装置的输入，且显示出输入参数及扫描系统信息于显示器122上。控制器118可以为一传统的计算机，其具有连接至适当内存装置(包括随机存取内存与磁盘中的储存内存、及适配卡与总线)的中央处理单元(CPU)。激光束退火设备50能够将横越构件表面的局部表面区域予以激光退火，其中该构件表面在整个表面区域具有良好均匀性。
被退火以减少或修复微裂缝的构件20可以被用在一基材处理设备200中(如图5所示)，其是用以制造基材215(例如半导体晶片与显示器)。设备200可以为MxP、MxP Super E、或eMax型式的蚀刻腔室，其可由美国加州Santa Clara的Applied Materials Inc.所获得，且大体上被描述于共同受让给Cheng等人的美国专利案号US4,842,683与US5,215,619及Maydan等人的美国专利案号US4,668,338中，这些专利是在此被并入本文以做为参考。一示范性设备200可被用在一多腔室整合系统中以处理半导体基材，如Maydan等人的美国专利US4,951,601中所描述的，其是在此被并入本文以做为参考。
一般而言，设备200包含一处理腔室225，以及辅助控制、电性、配管与支撑构件。一包含支撑件238的支撑组件230是被提供以在一制程区块235中接收基材215。支撑件238可以为一静电夹盘240，该静电夹盘240包含至少部分地覆盖住一电极250的一介电质245，且具有气体出口260，一热传送气体(例如氦)可以经由气体导管270自一热传送气体来源265通过该气体出口260以控制基材215的温度。替代性地，支撑件238可以为一真空或机械夹盘或任何其它该技艺中所熟知的支撑件。电极250是被一电极电压供应器275所电性充电，以静电地固持住基材215。一位在静电夹盘240下方的基座280可以选择性地包含一热交换器，例如一热交换流体可以被循环通过的通道。
制程气体经由一气体供应285被导入腔室225，该气体供应285包括一气体来源290与一或多个终止于腔室225内的气体喷嘴295。气体喷嘴295可以位在基材215的周围(如图所示)，或在一装设于腔室顶的喷洒头内(未显示)。一气体流控制器300被用已控制制程气体的流速。耗用的制程气体与副产物经由一排气系统305而自腔室225被排放。排气系统305典型地包含连接到数个泵(例如粗抽泵或高真空泵)的一排气导管，该些泵可以排放腔室225中的气体。一节流阀310被提供在排气导管中，以控制腔室225内的气体压力。
一激化气体(例如一气体等离子)被一气体激化器275自制程气体所产生，该气体激化器275是耦接电磁能(例如RF或微波能量)至腔室225的制程区块235中的制程气体。例如，气体激化器275可以包含第一制程电极315(例如电性接地的侧壁或腔室顶)，以及第二电极(其可以为介电质245中的电极250)。第一与第二电极315、250是彼此相对而被一电极电压供应器270提供的RF电压施予电性偏压。所施加至电极315、250的RF电压的频率典型地介于约50KHz至约60KHz之间。在其它态样中，气体激化器275也可以包括一诱导器天线(未显示)，其包含一或多个线圈以感应地耦合RF能量至腔室225。被电容地产生的等离子可以藉由在磁性强化反应器(magnetically enhanced reactor)中的电子回旋共振而被增强，其中一磁场产生器320(例如一永久磁铁或电磁线圈)是提供磁场于腔室225内，该腔室225具有具一轴的旋转磁场，该轴是旋转平行于基材215的平面。
腔室225也可以包含一或多个制程监视系统(未显示)以监视正被执行在基材215上的制程。典型的制程监视系统包含一干涉系统(其会测量自基材215上正被处理层次所反射的光强度)，或一等离子放射系统(其会测量腔室225中气体物种的光放射强度的改变)。制程监视系统是有用的，其能侦测正被执行在基材215上的制程的终点。
已激光退火的构件20(例如环25)是被嵌合在腔室225内的支撑件组件230的基材支撑件238周围。环25可以藉由避免使介电质245接触于腔室225内的激化制程气体而保护支撑件组件230(例如静电夹盘240的介电质245)不被腐蚀。替代性地，环25在支撑件组件230中可以具有其它用途。
请参阅图6，额外的结构(例如包围住环25的项圈210)也可以被激光退火以减少表面微裂缝。项圈210可以由一陶瓷材料(例如氧化铝或氧化硅)所制成。项圈210是做为一屏蔽，其与环一起为用于腔室的可更换的制程套件。其它环状结构(例如腔室壁衬里)也可以被激光退火，且也可以用在腔室225的制程套件的部件。
虽然本发明的示范性实施例已经被显示且被描述，熟习该技艺的人士可以构想出其它包含本发明且位于本发明范围内的实施例。例如，已退火的腔室构件20可以来自腔室225的顶或室壁腔室构件。此外，表面退火的替代性方法也可以被使用。再者，关于示范性实施例的相对或位置的用语是可以交替的。因此，随附权利要求不应该被受限在本文所描述以说明本发明的较佳态样、材料或空间配置的叙述。

Claims (12)

1.一种具有一结构性本体的基材处理腔室构件，包含局部表面区域，所述局部表面区域具有(i)微裂缝，该些微裂缝是通过激光退火工艺由自身修复并密封住，所述微裂缝在玻璃材料中为构件材料原子之间原子键结的等级，在微结晶材料中为晶粒的等级；以及(ii)比未处理的结构性本体的维克氏硬度高至少10％的平均维克氏硬度。
2.如权利要求1所述的构件，包含经CO2激光退火的微裂缝的局部表面区域。
3.如权利要求1所述的构件，其中该结构性本体具有围绕一内部轴的旋转对称性。
4.如权利要求1所述的构件，其中该结构性本体由陶瓷、玻璃、或玻璃-陶瓷材料所制成。
5.如权利要求1所述的构件，其中该结构性本体包含石英。
6.如权利要求1所述的构件，其中该局部表面区域为该结构性本体的表面或边缘。
7.如权利要求1所述的构件，其中该结构性本体包含比未处理本体高至少25％的平均碎裂应力。
8.如权利要求1所述的构件，其中该结构性本体包含一环、平板、或圆柱体。
9.一种制造基材处理腔室构件的方法，该方法包含：
(a)形成具有结构性本体的构件；以及
(b)导引一激光束至该构件上以加热局部表面区域的一浅部分而持续一足够时间，以激光退火微裂缝使得微裂缝由自身修复并密封位，所述微裂缝在玻璃材料中为构件材料原子之间原子键结的等级，在微结晶材料中为晶粒的等级；
其中该结构性本体具有比未处理的结构性本体的维克氏硬度高至少10％的平均维克氏硬度。
10.如权利要求9所述的方法，包含以下的至少一个：
(i)扫描该激光束横越该些局部表面区域；或
(ii)以CO2激光产生该激光束。
11.如权利要求9所述的方法，包含导引具有以下性质的至少一个的激光束：
(i)介于190纳米至10600纳米之间的波长；或
(ii)介于5瓦特至10000瓦特之间的功率位准。
12.如权利要求9所述的构件，其中该结构性本体包含比未处理本体高至少25％的平均碎裂应力。
CN2006800252684A 2005-07-13 2006-07-12 基材处理腔室的构件的局部表面退火 Expired - Fee Related CN101218191B (zh)

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Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080264564A1 (en) 2007-04-27 2008-10-30 Applied Materials, Inc. Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
TWI695822B (zh) * 2007-04-27 2020-06-11 美商應用材料股份有限公司 減小曝露於含鹵素電漿下之表面腐蝕速率的方法與設備
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US8291728B2 (en) * 2009-02-27 2012-10-23 Corning Incorporated Method for the joining of low expansion glass
US20140261975A1 (en) * 2011-11-02 2014-09-18 Ferro Corporation Microwave Sealing Of Inorganic Substrates Using Low Melting Glass Systems
KR101991405B1 (ko) * 2012-09-19 2019-06-20 삼성전자주식회사 빔 형상기, 이를 구비하는 레이저 어닐링 시스템 및 이 시스템을 이용하여 반사형 포토 마스크를 제작하는 방법
US9142465B1 (en) 2013-03-13 2015-09-22 Sandia Corporation Precise annealing of focal plane arrays for optical detection
TWD169790S (zh) * 2013-07-10 2015-08-11 日立國際電氣股份有限公司 基板處理裝置用氣化器之部分
US9653341B2 (en) * 2014-03-05 2017-05-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US10126061B1 (en) * 2014-08-28 2018-11-13 Apple Inc. Localized strengthening of features for a sapphire component
CN108352297B (zh) * 2015-12-07 2023-04-28 应用材料公司 合并式盖环
US10422028B2 (en) * 2015-12-07 2019-09-24 Lam Research Corporation Surface coating treatment
DE102017101808A1 (de) * 2016-02-04 2017-08-10 Schott Ag Verfahren zur Dickenkontrolle eines Substrates
US10246342B2 (en) 2016-03-31 2019-04-02 Tronox Llc Centrifugal aluminum chloride generator
US10434604B2 (en) 2016-10-14 2019-10-08 Applied Materials, Inc. Texturizing a surface without bead blasting
USD875055S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875053S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875054S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
US10593602B2 (en) * 2018-04-27 2020-03-17 Semiconductor Components Industries, Llc Semiconductor substrate crack mitigation systems and related methods
JP1638504S (zh) * 2018-12-06 2019-08-05
CN112195317B (zh) * 2020-10-15 2022-04-15 温州大学 一种异构结构高熵合金的冷轧复合激光表面退火工艺方法
US11955361B2 (en) 2021-04-15 2024-04-09 Applied Materials, Inc. Electrostatic chuck with mesas
USD1042374S1 (en) 2022-03-18 2024-09-17 Applied Materials, Inc. Support pipe for an interlocking process kit for a substrate processing chamber
USD1042373S1 (en) 2022-03-18 2024-09-17 Applied Materials, Inc. Sliding ring for an interlocking process kit for a substrate processing chamber
US20240158295A1 (en) * 2022-11-15 2024-05-16 Communications Test Design, Inc. System and method for removing defects from glass materials with laser irradiation

Family Cites Families (437)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2705500A (en) 1953-11-04 1955-04-05 Leon L Deer Cleaning aluminum
US3117883A (en) 1960-09-23 1964-01-14 Glidden Co Pigment for aqueous latex emulsion paints
US3322848A (en) * 1962-08-20 1967-05-30 Mobil Oil Corp Production of lubricating oils
US3482082A (en) 1966-03-18 1969-12-02 Techicon Corp Sample identification apparatus
US3457151A (en) 1966-10-27 1969-07-22 Solutec Corp Electrolytic cleaning method
US3565771A (en) 1967-10-16 1971-02-23 Shipley Co Etching and metal plating silicon containing aluminum alloys
US3522083A (en) 1967-11-03 1970-07-28 Grace W R & Co Phosphonitrilic laminating and molding resins
US3679460A (en) 1970-10-08 1972-07-25 Union Carbide Corp Composite wear resistant material and method of making same
GB1358061A (en) * 1971-05-21 1974-06-26 Glaverbel Methods of strengthening glass articles
DE2225390A1 (de) 1972-05-25 1973-12-06 Messerschmitt Boelkow Blohm Vorrichtung und verfahren zur herstellung definierter wanddickenaenderungen eines rotationssymmetrischen hohlkoerpers
US3848104A (en) 1973-04-09 1974-11-12 Avco Everett Res Lab Inc Apparatus for heat treating a surface
USRE31198E (en) 1974-02-14 1983-04-05 Amchem Products, Inc. Method for cleaning aluminum at low temperatures
JPS5827652Y2 (ja) 1978-05-02 1983-06-15 日本軽金属株式会社 海苔養殖用アルミニウム合金製ポ−ル
JPS54162969U (zh) 1978-05-04 1979-11-14
US4218330A (en) * 1978-06-26 1980-08-19 Ethyl Corporation Lubricant
EP0010556B1 (en) 1978-10-30 1983-03-30 Ingenieursbureau voor Systemen en Octrooien "SPANSTAAL" B.V. Method and device for manufacturing a road surface, a runway or the like
US4386229A (en) * 1980-03-21 1983-05-31 Phillips Petroleum Company Olefin dimerization
US4430360A (en) 1981-03-11 1984-02-07 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of fabricating an abradable gas path seal
US4358659A (en) 1981-07-13 1982-11-09 Mostek Corporation Method and apparatus for focusing a laser beam on an integrated circuit
US4419201A (en) 1981-08-24 1983-12-06 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
US4412133A (en) 1982-01-05 1983-10-25 The Perkin-Elmer Corp. Electrostatic cassette
JPS6059104B2 (ja) 1982-02-03 1985-12-23 株式会社東芝 静電チヤツク板
FR2538987A1 (fr) 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
FR2551056B1 (fr) * 1983-08-25 1985-11-29 Inst Francais Du Petrole Nouveau procede de fabrication d'olefine lineaire a partir d'acide gras ou d'ester d'acide gras sature
GB2147459A (en) 1983-09-30 1985-05-09 Philips Electronic Associated Electrostatic chuck for semiconductor wafers
US4606802A (en) 1983-12-21 1986-08-19 Hitachi, Ltd. Planar magnetron sputtering with modified field configuration
FR2562097A1 (fr) 1984-03-28 1985-10-04 Andritz Ag Maschf Procede pour le decapage d'aciers allies, de cuivre, d'alliages de metaux lourds non-ferreux, de titane, de zirconium, de tantale, etc. au moyen de bains d'acide nitrique
JPS60185786U (ja) 1984-05-22 1985-12-09 日立金属株式会社 防食継手
JPS6131636U (ja) 1984-07-31 1986-02-26 株式会社 徳田製作所 静電チヤツク
JPH0676652B2 (ja) 1984-10-08 1994-09-28 キヤノン株式会社 真空装置用構造材の表面処理方法
US5215639A (en) 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
JPS61146717A (ja) 1984-12-18 1986-07-04 Sumitomo Chem Co Ltd タンタルの精製方法
JPS61155279A (ja) * 1984-12-27 1986-07-14 住友電気工業株式会社 セラミツクスの製造方法
FR2578455B1 (fr) 1985-03-08 1987-05-07 Lami Philippe Ensemble destine a redonner les conditions initiales de proprete dans un tube de quartz utilise comme chambre de reaction pour la fabrication des circuits integres
JPS61242974A (ja) * 1985-04-19 1986-10-29 株式会社日立製作所 薄膜改質方法
JPS61256663A (ja) * 1985-05-09 1986-11-14 Agency Of Ind Science & Technol 半導体装置
DE3523958A1 (de) 1985-07-04 1987-01-08 Licentia Gmbh Verfahren zur chemischen behandlung von keramikkoerpern mit nachfolgender metallisierung
JP2515731B2 (ja) 1985-10-25 1996-07-10 株式会社日立製作所 薄膜形成装置および薄膜形成方法
US4713119A (en) 1986-03-20 1987-12-15 Stauffer Chemical Company Process for removing alkali metal aluminum silicate scale deposits from surfaces of chemical process equipment
US4684447A (en) 1986-03-24 1987-08-04 Conoco Inc. Method for applying protective coatings
CH670970A5 (zh) 1986-09-18 1989-07-31 Grob Ernst Fa
FR2605310B1 (fr) * 1986-10-16 1992-04-30 Comp Generale Electricite Procede de renforcement de pieces ceramiques par traitement au laser
JPS63235435A (ja) 1987-03-24 1988-09-30 Nishimura Watanabe Chiyuushiyutsu Kenkyusho:Kk 金属タンタルの製造方法
JPS63149396U (zh) 1987-03-24 1988-09-30
US5035787A (en) 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles
US5009966A (en) 1987-12-31 1991-04-23 Diwakar Garg Hard outer coatings deposited on titanium or titanium alloys
US4832781A (en) 1988-01-07 1989-05-23 Varian Associates, Inc. Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum
ATE95513T1 (de) 1988-04-26 1993-10-15 Toto Ltd Verfahren zur herstellung dielektrischer keramik fuer elektrostatische haltevorrichtungen.
US5032469A (en) 1988-09-06 1991-07-16 Battelle Memorial Institute Metal alloy coatings and methods for applying
JP2665242B2 (ja) 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
US4959105A (en) 1988-09-30 1990-09-25 Fred Neidiffer Aluminium cleaning composition and process
JPH02101157A (ja) 1988-10-05 1990-04-12 Fujikura Ltd 真空蒸着用銅基材の製造方法
US5409590A (en) 1989-04-17 1995-04-25 Materials Research Corporation Target cooling and support for magnetron sputter coating apparatus
JP2779950B2 (ja) 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
US4995958A (en) 1989-05-22 1991-02-26 Varian Associates, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
IT1235332B (it) 1989-06-05 1992-06-26 Diaprint S P A Granitura elettrochimica di superfici in alluminio o in lega di alluminio
JPH0317288A (ja) 1989-06-13 1991-01-25 Daicel Chem Ind Ltd スタンパー用電解洗浄液
US5130170A (en) 1989-06-28 1992-07-14 Canon Kabushiki Kaisha Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation
DE69030140T2 (de) 1989-06-28 1997-09-04 Canon Kk Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht
US5338367A (en) 1989-07-26 1994-08-16 Ugine, Aciers De Chatillon Et Gueugnon Pickling process in an acid bath of metallic products containing titanium or at least one chemical element of the titanium family
US4967032A (en) * 1989-09-05 1990-10-30 Mobil Oil Corporation Process for improving thermal stability of synthetic lubes
US4996859A (en) 1989-10-23 1991-03-05 A. J. Rose Manufacturing Company Method and apparatus for roll forming metal
US5180563A (en) 1989-10-24 1993-01-19 Gte Products Corporation Treatment of industrial wastes
JPH03138354A (ja) 1989-10-24 1991-06-12 Pioneer Electron Corp 防着板を備えた薄膜形成装置
DE69103915T2 (de) 1990-01-25 1995-05-11 Applied Materials Inc Elektrostatische Klemmvorrichtung und Verfahren.
FR2657888B1 (fr) 1990-02-08 1994-04-15 Ugine Aciers Procedes de decapage de materiaux en acier inoxydable.
US5202008A (en) 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5391275A (en) 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
JPH071675B2 (ja) 1990-08-22 1995-01-11 大日本スクリーン製造株式会社 シャドウマスクの製造方法及びシャドウマスク板材
US5055964A (en) 1990-09-07 1991-10-08 International Business Machines Corporation Electrostatic chuck having tapered electrodes
JP3064409B2 (ja) 1990-11-30 2000-07-12 株式会社日立製作所 保持装置およびそれを用いた半導体製造装置
US5855687A (en) 1990-12-05 1999-01-05 Applied Materials, Inc. Substrate support shield in wafer processing reactors
US5304248A (en) 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
EP0493089B1 (en) 1990-12-25 1998-09-16 Ngk Insulators, Ltd. Wafer heating apparatus and method for producing the same
US5166856A (en) 1991-01-31 1992-11-24 International Business Machines Corporation Electrostatic chuck with diamond coating
US5248386A (en) 1991-02-08 1993-09-28 Aluminum Company Of America Milling solution and method
US5215624A (en) 1991-02-08 1993-06-01 Aluminum Company Of America Milling solution and method
US5191506A (en) 1991-05-02 1993-03-02 International Business Machines Corporation Ceramic electrostatic chuck
US5325261A (en) 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5242706A (en) * 1991-07-31 1993-09-07 The United States Of America As Represented By The Secretary Of The Navy Laser-deposited biocompatible films and methods and apparatuses for producing same
US5458759A (en) 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
US5275683A (en) 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
US5539609A (en) 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
JPH05166757A (ja) 1991-12-13 1993-07-02 Tokyo Electron Ltd 被処理体の温調装置
US5356723A (en) 1991-12-18 1994-10-18 Sumitomo Metal Industries, Ltd. Multilayer plated aluminum sheets
US5376223A (en) 1992-01-09 1994-12-27 Varian Associates, Inc. Plasma etch process
US5315473A (en) 1992-01-21 1994-05-24 Applied Materials, Inc. Isolated electrostatic chuck and excitation method
JP2865472B2 (ja) 1992-02-20 1999-03-08 信越化学工業株式会社 静電チャック
US5314597A (en) 1992-03-20 1994-05-24 Varian Associates, Inc. Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile
FR2692599B1 (fr) 1992-06-17 1994-09-16 Prod Ind Cfpi Franc Procédé de traitement de substrats à base d'aluminium en vue de leur anodisation, bain mis en Óoeuvre dans ce procédé et concentré pour préparer le bain.
JP2938679B2 (ja) 1992-06-26 1999-08-23 信越化学工業株式会社 セラミックス製静電チャック
US5401319A (en) 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US5630314A (en) 1992-09-10 1997-05-20 Hitachi, Ltd. Thermal stress relaxation type ceramic coated heat-resistant element
US6338906B1 (en) 1992-09-17 2002-01-15 Coorstek, Inc. Metal-infiltrated ceramic seal
JP2839801B2 (ja) 1992-09-18 1998-12-16 三菱マテリアル株式会社 ウェーハの製造方法
JP3566740B2 (ja) 1992-09-30 2004-09-15 アプライド マテリアルズ インコーポレイテッド 全ウエハデポジション用装置
US5803977A (en) 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
US5292554A (en) 1992-11-12 1994-03-08 Applied Materials, Inc. Deposition apparatus using a perforated pumping plate
US5684669A (en) 1995-06-07 1997-11-04 Applied Materials, Inc. Method for dechucking a workpiece from an electrostatic chuck
US5350479A (en) 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
JP3323924B2 (ja) 1993-01-29 2002-09-09 東京エレクトロン株式会社 静電チャック
US5427825A (en) 1993-02-09 1995-06-27 Rutgers, The State University Localized surface glazing of ceramic articles
US5542559A (en) 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5800686A (en) 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JPH06326175A (ja) 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
CH690805A5 (de) 1993-05-04 2001-01-15 Unaxis Balzers Ag Magnetfeldunterstützte Zerstäubungsanordnung und Vakuumbehandlungsanlage hiermit.
US5403459A (en) 1993-05-17 1995-04-04 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
US5407551A (en) 1993-07-13 1995-04-18 The Boc Group, Inc. Planar magnetron sputtering apparatus
EP0634756B1 (en) 1993-07-16 1998-09-30 Kabushiki Kaisha Toshiba Metal oxide resistor, power resistor, and power circuit breaker
US5614055A (en) 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5487822A (en) 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
US6199259B1 (en) 1993-11-24 2001-03-13 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
US5433835B1 (en) 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
DE59406576D1 (de) 1993-12-27 1998-09-03 Hoechst Ag Thermisches auftragsverfahren für hydrophile schichten auf hydrophoben substraten und verwendung so beschichteter substrate als trägerkörper für offsetdruckplatten
JPH07197272A (ja) 1993-12-29 1995-08-01 Kobe Steel Ltd フィルム密着性に優れた表面処理アルミニウム及びアルミニウム合金板
US5463526A (en) 1994-01-21 1995-10-31 Lam Research Corporation Hybrid electrostatic chuck
EP0692156A1 (en) 1994-01-31 1996-01-17 Applied Materials, Inc. Electrostatic chuck with conformal insulator film
JP4108119B2 (ja) 1994-02-23 2008-06-25 アプライド マテリアルズ， インコーポレイテッド 改良型化学気相堆積チャンバ
US5474649A (en) 1994-03-08 1995-12-12 Applied Materials, Inc. Plasma processing apparatus employing a textured focus ring
US5512078A (en) 1994-03-24 1996-04-30 Griffin; Stephen E. Apparatus for making linearly tapered bores in quartz tubing with a controlled laser
US5685914A (en) 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
JP2720420B2 (ja) 1994-04-06 1998-03-04 キヤノン販売株式会社 成膜／エッチング装置
US5518593A (en) 1994-04-29 1996-05-21 Applied Komatsu Technology, Inc. Shield configuration for vacuum chamber
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5453556A (en) * 1994-06-22 1995-09-26 Mobil Oil Corporation Oligomerization process for producing synthetic lubricants
JP3020017B2 (ja) 1994-11-07 2000-03-15 大同メタル工業株式会社 湿式摩擦部材
US5597944A (en) * 1994-11-07 1997-01-28 Texaco Inc. Dehydrogenation of N-paraffin to N-olefin employing manganese oxide octahedral molecular sieve as catalyst
US5605637A (en) 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
US5868847A (en) 1994-12-16 1999-02-09 Applied Materials, Inc. Clamp ring for shielding a substrate during film layer deposition
DE4446919A1 (de) 1994-12-28 1996-07-04 Dynamit Nobel Ag Verfahren zur Herstellung von innenverzahnten Teilen
JP2689931B2 (ja) 1994-12-29 1997-12-10 日本電気株式会社 スパッタ方法
US5792562A (en) 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
JP3744964B2 (ja) 1995-04-06 2006-02-15 株式会社アルバック 成膜装置用構成部品及びその製造方法
DE19513207A1 (de) * 1995-04-11 1996-10-17 Metallgesellschaft Ag Verfahren zum Erzeugen von Wachsester und Hydrieren des Wachsesters zu Fettalkohol
US6073830A (en) 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US6683224B1 (en) * 1995-05-03 2004-01-27 Cognis Deutschland Gmbh & Co. Kg Process for the production of fatty alcohols
US5886863A (en) 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5695825A (en) 1995-05-31 1997-12-09 Amorphous Technologies International Titanium-containing ferrous hard-facing material source and method for hard facing a substrate
US5690795A (en) 1995-06-05 1997-11-25 Applied Materials, Inc. Screwless shield assembly for vacuum processing chambers
US5660640A (en) 1995-06-16 1997-08-26 Joray Corporation Method of removing sputter deposition from components of vacuum deposition equipment
US5614071A (en) 1995-06-28 1997-03-25 Hmt Technology Corporation Sputtering shield
JPH0917850A (ja) 1995-06-30 1997-01-17 Tokyo Electron Ltd プラズマ処理装置
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
GB2318590B (en) 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
KR100227924B1 (ko) 1995-07-28 1999-11-01 가이데 히사오 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US5763851A (en) 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
JPH09270401A (ja) 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの研磨方法
US6095084A (en) 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5879524A (en) 1996-02-29 1999-03-09 Sony Corporation Composite backing plate for a sputtering target
US5658442A (en) 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
US5901751A (en) 1996-03-08 1999-05-11 Applied Materials, Inc. Restrictor shield having a variable effective throughout area
JP3620554B2 (ja) 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JPH09272965A (ja) 1996-04-09 1997-10-21 Toshiba Corp 真空成膜装置用部品とそれを用いた真空成膜装置、およびターゲット、バッキングプレート
US6108189A (en) 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US5720818A (en) 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
EP0803900A3 (en) 1996-04-26 1999-12-29 Applied Materials, Inc. Surface preparation to enhance the adhesion of a dielectric layer
EP0845151A1 (en) 1996-05-09 1998-06-03 Applied Materials, Inc. Recessed coil for generating a plasma
US6368469B1 (en) 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
US5948288A (en) 1996-05-28 1999-09-07 Komag, Incorporated Laser disk texturing apparatus
US5824197A (en) 1996-06-05 1998-10-20 Applied Materials, Inc. Shield for a physical vapor deposition chamber
US5748434A (en) 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US5812362A (en) 1996-06-14 1998-09-22 Applied Materials, Inc. Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks
US6120621A (en) 1996-07-08 2000-09-19 Alcan International Limited Cast aluminum alloy for can stock and process for producing the alloy
US5736021A (en) 1996-07-10 1998-04-07 Applied Materials, Inc. Electrically floating shield in a plasma reactor
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5810931A (en) 1996-07-30 1998-09-22 Applied Materials, Inc. High aspect ratio clamp ring
JP3619330B2 (ja) 1996-07-31 2005-02-09 京セラ株式会社 プラズマプロセス装置用部材
US5914018A (en) 1996-08-23 1999-06-22 Applied Materials, Inc. Sputter target for eliminating redeposition on the target sidewall
US6143432A (en) 1998-01-09 2000-11-07 L. Pierre deRochemont Ceramic composites with improved interfacial properties and methods to make such composites
US5916454A (en) 1996-08-30 1999-06-29 Lam Research Corporation Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber
US5942041A (en) 1996-09-16 1999-08-24 Mosel-Vitelic, Inc. Non-sticking semi-conductor wafer clamp and method of making same
US6251720B1 (en) 1996-09-27 2001-06-26 Randhir P. S. Thakur High pressure reoxidation/anneal of high dielectric constant materials
US5830327A (en) 1996-10-02 1998-11-03 Intevac, Inc. Methods and apparatus for sputtering with rotating magnet sputter sources
US6007673A (en) 1996-10-02 1999-12-28 Matsushita Electronics Corporation Apparatus and method of producing an electronic device
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6036587A (en) 1996-10-10 2000-03-14 Applied Materials, Inc. Carrier head with layer of conformable material for a chemical mechanical polishing system
US5930661A (en) 1996-10-15 1999-07-27 Vanguard International Semiconductor Corporation Substrate clamp design for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers
US5685959A (en) 1996-10-25 1997-11-11 Hmt Technology Corporation Cathode assembly having rotating magnetic-field shunt and method of making magnetic recording media
SG54602A1 (en) 1996-11-26 1998-11-16 Applied Materials Inc Coated deposition chamber equipment
US6284093B1 (en) 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US5885428A (en) 1996-12-04 1999-03-23 Applied Materials, Inc. Method and apparatus for both mechanically and electrostatically clamping a wafer to a pedestal within a semiconductor wafer processing system
JPH10167859A (ja) 1996-12-05 1998-06-23 Ngk Insulators Ltd セラミックス部品およびその製造方法
US6152071A (en) 1996-12-11 2000-11-28 Canon Kabushiki Kaisha High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
US5939146A (en) 1996-12-11 1999-08-17 The Regents Of The University Of California Method for thermal spraying of nanocrystalline coatings and materials for the same
US5821166A (en) 1996-12-12 1998-10-13 Komatsu Electronic Metals Co., Ltd. Method of manufacturing semiconductor wafers
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
EP0946965B1 (de) 1996-12-21 2006-05-17 Singulus Technologies AG Vorrichtung und verfahren zur kathodenzerstäubung
KR20000069523A (ko) 1997-01-16 2000-11-25 보텀필드 레인, 에프. 기상 증착 요소 및 기상 증착 방법
US5963778A (en) 1997-02-13 1999-10-05 Tosoh Smd, Inc. Method for producing near net shape planar sputtering targets and an intermediate therefor
US5808270A (en) 1997-02-14 1998-09-15 Ford Global Technologies, Inc. Plasma transferred wire arc thermal spray apparatus and method
US5844318A (en) 1997-02-18 1998-12-01 Micron Technology, Inc. Aluminum film for semiconductive devices
US5916378A (en) 1997-03-11 1999-06-29 Wj Semiconductor Equipment Group, Inc. Method of reducing metal contamination during semiconductor processing in a reactor having metal components
US6432203B1 (en) 1997-03-17 2002-08-13 Applied Komatsu Technology, Inc. Heated and cooled vacuum chamber shield
US5893643A (en) 1997-03-25 1999-04-13 Applied Materials, Inc. Apparatus for measuring pedestal temperature in a semiconductor wafer processing system
US6103069A (en) 1997-03-31 2000-08-15 Applied Materials, Inc. Chamber design with isolation valve to preserve vacuum during maintenance
DE19719133C2 (de) 1997-05-07 1999-09-02 Heraeus Quarzglas Glocke aus Quarzglas und Verfahren für ihre Herstellung
KR100246858B1 (ko) 1997-05-07 2000-03-15 윤종용 건식 식각 장치
US6000415A (en) 1997-05-12 1999-12-14 Applied Materials, Inc. Method and apparatus for positioning a restrictor shield of a pump in response to an electric signal
US6103070A (en) 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US5897752A (en) 1997-05-20 1999-04-27 Applied Materials, Inc. Wafer bias ring in a sustained self-sputtering reactor
US6589407B1 (en) 1997-05-23 2003-07-08 Applied Materials, Inc. Aluminum deposition shield
JP3449459B2 (ja) 1997-06-02 2003-09-22 株式会社ジャパンエナジー 薄膜形成装置用部材の製造方法および該装置用部材
JP4023893B2 (ja) 1997-06-06 2007-12-19 沖電気工業株式会社 発光素子アレイ及び発光素子
US6051114A (en) 1997-06-23 2000-04-18 Applied Materials, Inc. Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US5985033A (en) 1997-07-11 1999-11-16 Applied Materials, Inc. Apparatus and method for delivering a gas
US6063440A (en) 1997-07-11 2000-05-16 Applied Materials, Inc. Method for aligning a wafer
US6186092B1 (en) 1997-08-19 2001-02-13 Applied Materials, Inc. Apparatus and method for aligning and controlling edge deposition on a substrate
US6051122A (en) 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
JP3269993B2 (ja) 1997-08-28 2002-04-02 本田技研工業株式会社 車両の運動制御装置
US6162297A (en) 1997-09-05 2000-12-19 Applied Materials, Inc. Embossed semiconductor fabrication parts
US6010583A (en) 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
FR2768158B1 (fr) 1997-09-10 2001-06-01 Seb Sa Revetement de couche antiadherent a durete amelioree pour support en aluminium, articles et ustensiles culinaires comportant ce revetement
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US5922133A (en) 1997-09-12 1999-07-13 Applied Materials, Inc. Multiple edge deposition exclusion rings
WO1999014788A1 (en) 1997-09-16 1999-03-25 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US5903428A (en) 1997-09-25 1999-05-11 Applied Materials, Inc. Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same
US5879523A (en) 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US5920764A (en) 1997-09-30 1999-07-06 International Business Machines Corporation Process for restoring rejected wafers in line for reuse as new
US6364957B1 (en) 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6379575B1 (en) 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US5953827A (en) 1997-11-05 1999-09-21 Applied Materials, Inc. Magnetron with cooling system for process chamber of processing system
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6063441A (en) 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
GB2332155B (en) * 1997-12-12 2001-09-12 Sec Dep Of Science And Technol Highly acidic mesoporous synergystic solid catalyst and its applications
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
JP3179075B2 (ja) 1997-12-22 2001-06-25 旭化成株式会社 電気植毛用の繊維及び電気植毛品
US6340415B1 (en) 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
US6579431B1 (en) 1998-01-14 2003-06-17 Tosoh Smd, Inc. Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers
KR100265289B1 (ko) 1998-01-26 2000-09-15 윤종용 플라즈마식각장치의 캐소우드 제조방법 및 이에 따라 제조되는 캐소우드
JPH11219939A (ja) * 1998-02-04 1999-08-10 Tokyo Electron Ltd 基板載置台表面保護板、処理室内部のクリーニング方法及び基板載置台のクリーニング方法
JP3271658B2 (ja) 1998-03-23 2002-04-02 信越半導体株式会社 半導体シリコン単結晶ウェーハのラップ又は研磨方法
JP3540936B2 (ja) 1998-03-31 2004-07-07 京セラ株式会社 真空容器
JP3483494B2 (ja) 1998-03-31 2004-01-06 キヤノン株式会社 真空処理装置および真空処理方法、並びに該方法によって作成される電子写真感光体
US6015465A (en) 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
USH2087H1 (en) 1998-05-19 2003-11-04 H. C. Starck, Inc. Pickling of refractory metals
US6323055B1 (en) 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture
US6086735A (en) 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
US6014979A (en) 1998-06-22 2000-01-18 Applied Materials, Inc. Localizing cleaning plasma for semiconductor processing
DE19830817B4 (de) 1998-07-09 2011-06-09 Leifeld Metal Spinning Gmbh Verfahren zum Umformen eines Werkstücks durch Drückwalzen
US6096135A (en) 1998-07-21 2000-08-01 Applied Materials, Inc. Method and apparatus for reducing contamination of a substrate in a substrate processing system
US6280584B1 (en) 1998-07-29 2001-08-28 Applied Materials, Inc. Compliant bond structure for joining ceramic to metal
US6132566A (en) 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6183686B1 (en) 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US6071389A (en) 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
JP4213790B2 (ja) 1998-08-26 2009-01-21 コバレントマテリアル株式会社 耐プラズマ部材およびそれを用いたプラズマ処理装置
US6749103B1 (en) 1998-09-11 2004-06-15 Tosoh Smd, Inc. Low temperature sputter target bonding method and target assemblies produced thereby
US6170429B1 (en) 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP2002529594A (ja) 1998-10-29 2002-09-10 アプライド マテリアルズ インコーポレイテッド 半導体ウエハ処理システムにおいて加工物を貫通して電力を結合する装置
JP2000144399A (ja) 1998-10-30 2000-05-26 Applied Materials Inc スパッタリング装置
WO2000028104A1 (en) 1998-11-06 2000-05-18 Scivac Sputtering apparatus and process for high rate coatings
US6168668B1 (en) 1998-11-25 2001-01-02 Applied Materials, Inc. Shadow ring and guide for supporting the shadow ring in a chamber
JP3919409B2 (ja) 1998-11-30 2007-05-23 川崎マイクロエレクトロニクス株式会社 プラズマ処理装置および半導体製造装置のフォーカスリング
US6447853B1 (en) 1998-11-30 2002-09-10 Kawasaki Microelectronics, Inc. Method and apparatus for processing semiconductor substrates
JP3865349B2 (ja) 1998-12-21 2007-01-10 アプライド マテリアルズ インコーポレイテッド イオン注入装置のウェハ支持台
US6276997B1 (en) 1998-12-23 2001-08-21 Shinhwa Li Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers
JP3164559B2 (ja) 1998-12-28 2001-05-08 太平洋セメント株式会社 処理容器用部材
JP4141560B2 (ja) 1998-12-28 2008-08-27 日本メクトロン株式会社 回路基板のプラズマ処理装置
US6159299A (en) 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6183614B1 (en) 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6123804A (en) 1999-02-22 2000-09-26 Applied Materials, Inc. Sectional clamp ring
KR100343136B1 (ko) 1999-03-18 2002-07-05 윤종용 이중 연마저지층을 이용한 화학기계적 연마방법
EP1088795A4 (en) 1999-03-25 2004-03-31 Asahi Glass Co Ltd SYNTHETIC QUARTZ GLASS FOR OPTICAL ELEMENTS, MANUFACTURING PROCESS AND METHOD FOR USE THEREOF
KR20010014842A (ko) 1999-04-30 2001-02-26 조셉 제이. 스위니 반도체 장치를 제조하기 위한 장치 및 방법
US6500321B1 (en) 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
US6146509A (en) 1999-06-11 2000-11-14 Scivac Inverted field circular magnetron sputtering device
US6156124A (en) 1999-06-18 2000-12-05 Applied Materials, Inc. Wafer transfer station for a chemical mechanical polisher
US6352620B2 (en) 1999-06-28 2002-03-05 Applied Materials, Inc. Staged aluminum deposition process for filling vias
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6235163B1 (en) 1999-07-09 2001-05-22 Applied Materials, Inc. Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance
US6162336A (en) 1999-07-12 2000-12-19 Chartered Semiconductor Manufacturing Ltd. Clamping ring design to reduce wafer sticking problem in metal deposition
US6500299B1 (en) 1999-07-22 2002-12-31 Applied Materials Inc. Chamber having improved gas feed-through and method
KR100613919B1 (ko) 1999-07-26 2006-08-18 동경 엘렉트론 주식회사 기판세정구, 기판세정장치 및 기판세정방법
US6689252B1 (en) 1999-07-28 2004-02-10 Applied Materials, Inc. Abatement of hazardous gases in effluent
KR100315088B1 (ko) 1999-09-29 2001-11-24 윤종용 포커스 링을 갖는 반도체 웨이퍼 제조 장치
US6190516B1 (en) 1999-10-06 2001-02-20 Praxair S.T. Technology, Inc. High magnetic flux sputter targets with varied magnetic permeability in selected regions
US6423175B1 (en) 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
US6398929B1 (en) 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
US6149784A (en) 1999-10-22 2000-11-21 Applied Materials, Inc. Sputtering chamber shield promoting reliable plasma ignition
US6299740B1 (en) 2000-01-19 2001-10-09 Veeco Instrument, Inc. Sputtering assembly and target therefor
US6780794B2 (en) 2000-01-20 2004-08-24 Honeywell International Inc. Methods of bonding physical vapor deposition target materials to backing plate materials
US6277249B1 (en) 2000-01-21 2001-08-21 Applied Materials Inc. Integrated process for copper via filling using a magnetron and target producing highly energetic ions
US6227435B1 (en) 2000-02-02 2001-05-08 Ford Global Technologies, Inc. Method to provide a smooth paintable surface after aluminum joining
US6627056B2 (en) 2000-02-16 2003-09-30 Applied Materials, Inc. Method and apparatus for ionized plasma deposition
US6346352B1 (en) 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
TW503442B (en) 2000-02-29 2002-09-21 Applied Materials Inc Coil and coil support for generating a plasma
JP2002181050A (ja) 2000-03-16 2002-06-26 Nsk Ltd 転がり摺動部材とその製造方法及び転がり摺動ユニット
US6703356B1 (en) * 2000-03-23 2004-03-09 Exxonmobil Research And Engineering Company Synthetic hydrocarbon fluids
US6391146B1 (en) 2000-04-11 2002-05-21 Applied Materials, Inc. Erosion resistant gas energizer
US6623595B1 (en) 2000-03-27 2003-09-23 Applied Materials, Inc. Wavy and roughened dome in plasma processing reactor
US6394023B1 (en) 2000-03-27 2002-05-28 Applied Materials, Inc. Process kit parts and method for using same
US6416634B1 (en) 2000-04-05 2002-07-09 Applied Materials, Inc. Method and apparatus for reducing target arcing during sputter deposition
TW503449B (en) 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
EP1275411A4 (en) * 2000-04-18 2006-04-05 Teijin Ltd OXYGEN
JP4592916B2 (ja) 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
WO2001084624A2 (en) 2000-04-28 2001-11-08 Applied Materials, Inc. Semiconductor lift pin for dechucking substrates
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
WO2001084590A2 (en) 2000-05-04 2001-11-08 Etec Systems, Inc. Method and apparatus for imaging a specimen using indirect in-column detection of secondary electrons in a microcolumn
US6287437B1 (en) 2000-05-05 2001-09-11 Alcatel Recessed bonding of target for RF diode sputtering
US6619537B1 (en) 2000-06-12 2003-09-16 Tosoh Smd, Inc. Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers
US6484794B1 (en) 2000-07-06 2002-11-26 Edward R. Schulak Energy transfer system for cold storage facilities
US6358376B1 (en) 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
US6627050B2 (en) 2000-07-28 2003-09-30 Applied Materials, Inc. Method and apparatus for depositing a tantalum-containing layer on a substrate
US6506289B2 (en) 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
AU2001286453A1 (en) 2000-08-11 2002-02-25 Chem Trace Corporation System and method for cleaning semiconductor fabrication equipment parts
EP1322796B1 (en) 2000-08-17 2010-06-02 Tosoh Smd, Inc. High purity sputter targets with target end-of-life indication and method of manufacture
US6497797B1 (en) 2000-08-21 2002-12-24 Honeywell International Inc. Methods of forming sputtering targets, and sputtering targets formed thereby
US6383459B1 (en) 2000-08-31 2002-05-07 Osram Sylvania Inc. Method for purifying a tantalum compound using a fluoride compound and sulfuric acid
JP3666375B2 (ja) 2000-09-05 2005-06-29 日本軽金属株式会社 表面処理アルミニウム材及びその製造方法
KR20030064398A (ko) 2000-09-11 2003-07-31 토소우 에스엠디, 인크 내부 냉각 채널을 갖는 스퍼터 타겟의 제조 방법
US6503331B1 (en) 2000-09-12 2003-01-07 Applied Materials, Inc. Tungsten chamber with stationary heater
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6797639B2 (en) 2000-11-01 2004-09-28 Applied Materials Inc. Dielectric etch chamber with expanded process window
KR100631275B1 (ko) 2000-11-17 2006-10-02 닛코킨조쿠 가부시키가이샤 파티클 발생이 적은 스퍼터링 타겟트 또는 배킹 플레이트 및 파티클 발생이 적은 스퍼터링 방법
US6887356B2 (en) 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
WO2002042518A1 (de) 2000-11-27 2002-05-30 Unaxis Trading Ag Target mit dickenprofilierung für rf manetron
US20020090464A1 (en) 2000-11-28 2002-07-11 Mingwei Jiang Sputter chamber shield
US6800173B2 (en) 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
WO2002049785A1 (en) 2000-12-18 2002-06-27 Tosoh Smd, Inc. Low temperature sputter target/backing plate joining technique and assemblies made thereby
JP2002187736A (ja) 2000-12-19 2002-07-05 Shinetsu Quartz Prod Co Ltd プラズマ耐食性石英ガラス部材及びその製造方法
US6805952B2 (en) 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
JP2002220661A (ja) 2001-01-29 2002-08-09 Sharp Corp スパッタリング装置に用いられるバッキングプレートおよびスパッタリング方法
US6576909B2 (en) 2001-02-28 2003-06-10 International Business Machines Corp. Ion generation chamber
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
EP1381708B1 (en) 2001-04-24 2010-05-05 Tosoh Smd, Inc. Method of optimizing target profile
US6638366B2 (en) 2001-05-15 2003-10-28 Northrop Grumman Corporation Automated spray cleaning apparatus for semiconductor wafers
US6795292B2 (en) 2001-05-15 2004-09-21 Dennis Grimard Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber
US6599405B2 (en) 2001-05-30 2003-07-29 Praxair S.T. Technology, Inc. Recessed sputter target
US6777045B2 (en) 2001-06-27 2004-08-17 Applied Materials Inc. Chamber components having textured surfaces and method of manufacture
US20030000647A1 (en) 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
US7374636B2 (en) 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
US6974640B2 (en) 2001-07-09 2005-12-13 The University Of Connecticut Duplex coatings and bulk materials, and methods of manufacture thereof
US6620736B2 (en) 2001-07-24 2003-09-16 Tokyo Electron Limited Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
US20030047464A1 (en) 2001-07-27 2003-03-13 Applied Materials, Inc. Electrochemically roughened aluminum semiconductor processing apparatus surfaces
US6652713B2 (en) 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US7175802B2 (en) 2001-09-17 2007-02-13 Heraeus, Inc. Refurbishing spent sputtering targets
US6682627B2 (en) 2001-09-24 2004-01-27 Applied Materials, Inc. Process chamber having a corrosion-resistant wall and method
US6652716B2 (en) 2001-10-19 2003-11-25 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for self-aligning a cover ring in a sputter chamber
US6645357B2 (en) 2001-11-05 2003-11-11 Applied Materials, Inc. Mesh shield in a sputter reactor
US6454870B1 (en) 2001-11-26 2002-09-24 General Electric Co. Chemical removal of a chromium oxide coating from an article
US6667577B2 (en) 2001-12-18 2003-12-23 Applied Materials, Inc Plasma reactor with spoke antenna having a VHF mode with the spokes in phase
US6656535B2 (en) 2001-12-21 2003-12-02 Applied Materials, Inc Method of fabricating a coated process chamber component
US6899798B2 (en) 2001-12-21 2005-05-31 Applied Materials, Inc. Reusable ceramic-comprising component which includes a scrificial surface layer
US6824612B2 (en) 2001-12-26 2004-11-30 Applied Materials, Inc. Electroless plating system
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US6821350B2 (en) 2002-01-23 2004-11-23 Applied Materials, Inc. Cleaning process residues on a process chamber component
KR100446623B1 (ko) 2002-01-30 2004-09-04 삼성에스디아이 주식회사 전계 방출 표시장치 및 그 제조방법
US6743340B2 (en) 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US6623610B1 (en) 2002-03-02 2003-09-23 Shinzo Onishi Magnetron sputtering target for magnetic materials
KR20030071926A (ko) 2002-03-02 2003-09-13 엘지.필립스 엘시디 주식회사 스퍼터링 타겟 어셈블리 및 이를 이용한 스퍼터링 장비
US6730174B2 (en) 2002-03-06 2004-05-04 Applied Materials, Inc. Unitary removable shield assembly
US20030170486A1 (en) 2002-03-08 2003-09-11 David Austin Copper clad aluminum strips and a process for making copper clad aluminum strips
US6812471B2 (en) 2002-03-13 2004-11-02 Applied Materials, Inc. Method of surface texturizing
US6933508B2 (en) 2002-03-13 2005-08-23 Applied Materials, Inc. Method of surface texturizing
US7026009B2 (en) 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
US7121938B2 (en) 2002-04-03 2006-10-17 Toho Engineering Kabushiki Kaisha Polishing pad and method of fabricating semiconductor substrate using the pad
US20030188685A1 (en) 2002-04-08 2003-10-09 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
US7041200B2 (en) 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
US6676812B2 (en) 2002-05-09 2004-01-13 Taiwan Semiconductor Manufacturing Co., Ltd. Alignment mark shielding ring without arcing defect and method for using
TWI269815B (en) 2002-05-20 2007-01-01 Tosoh Smd Inc Replaceable target sidewall insert with texturing
US20030217693A1 (en) 2002-05-22 2003-11-27 Applied Materials, Inc. Substrate support assembly having an edge protector
US6708870B2 (en) 2002-05-24 2004-03-23 Praxair S.T. Technology, Inc. Method for forming sputter target assemblies
US6565984B1 (en) 2002-05-28 2003-05-20 Applied Materials Inc. Clean aluminum alloy for semiconductor processing equipment
US20030221702A1 (en) 2002-05-28 2003-12-04 Peebles Henry C. Process for cleaning and repassivating semiconductor equipment parts
US6652668B1 (en) 2002-05-31 2003-11-25 Praxair S.T. Technology, Inc. High-purity ferromagnetic sputter targets and method of manufacture
US6955748B2 (en) 2002-07-16 2005-10-18 Honeywell International Inc. PVD target constructions comprising projections
FR2842648B1 (fr) 2002-07-18 2005-01-14 Commissariat Energie Atomique Procede de transfert d'une couche mince electriquement active
US7223323B2 (en) 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
AU2003254149A1 (en) 2002-07-26 2004-02-16 Applied Materials, Inc. Hydrophilic components for a spin-rinse-dryer
US6846396B2 (en) 2002-08-08 2005-01-25 Applied Materials, Inc. Active magnetic shielding
US20040027781A1 (en) 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
US7141138B2 (en) 2002-09-13 2006-11-28 Applied Materials, Inc. Gas delivery system for semiconductor processing
US20040231798A1 (en) 2002-09-13 2004-11-25 Applied Materials, Inc. Gas delivery system for semiconductor processing
EP1556526B1 (en) 2002-10-21 2009-03-11 Cabot Corporation Method of forming a sputtering target assembly and assembly made therefrom
US20050028838A1 (en) 2002-11-25 2005-02-10 Karl Brueckner Cleaning tantalum-containing deposits from process chamber components
US6902628B2 (en) 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
US6811657B2 (en) 2003-01-27 2004-11-02 Micron Technology, Inc. Device for measuring the profile of a metal film sputter deposition target, and system and method employing same
US7604708B2 (en) 2003-02-14 2009-10-20 Applied Materials, Inc. Cleaning of native oxide with hydrogen-containing radicals
EP1694885A4 (en) 2003-04-18 2007-12-19 Applied Materials Inc GALVANIZATION SYSTEM WITH MULTIPLE CHEMISTRY
US20060105182A1 (en) 2004-11-16 2006-05-18 Applied Materials, Inc. Erosion resistant textured chamber surface
US20040261946A1 (en) 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US7297247B2 (en) 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US20040249229A1 (en) * 2003-06-06 2004-12-09 Gee Jeffery C. Isomerization of olefins with carboxylic acid
US7097744B2 (en) 2003-06-12 2006-08-29 Applied Materials, Inc. Method and apparatus for controlling darkspace gap in a chamber
US20040256226A1 (en) 2003-06-20 2004-12-23 Wickersham Charles E. Method and design for sputter target attachment to a backing plate
US6992261B2 (en) 2003-07-15 2006-01-31 Cabot Corporation Sputtering target assemblies using resistance welding
US7425093B2 (en) 2003-07-16 2008-09-16 Cabot Corporation Thermography test method and apparatus for bonding evaluation in sputtering targets
US20050048876A1 (en) 2003-09-02 2005-03-03 Applied Materials, Inc. Fabricating and cleaning chamber components having textured surfaces
US20050061857A1 (en) 2003-09-24 2005-03-24 Hunt Thomas J. Method for bonding a sputter target to a backing plate and the assembly thereof
US7431195B2 (en) 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
JP4099135B2 (ja) 2003-10-31 2008-06-11 三菱電機株式会社 反射ミラーの製造方法
US20050098427A1 (en) 2003-11-11 2005-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. RF coil design for improved film uniformity of an ion metal plasma source
US7294224B2 (en) 2003-12-01 2007-11-13 Applied Materials, Inc. Magnet assembly for plasma containment
US20050150452A1 (en) 2004-01-14 2005-07-14 Soovo Sen Process kit design for deposition chamber
CN1910304A (zh) 2004-02-03 2007-02-07 霍尼韦尔国际公司 物理气相沉积靶构造
US7264679B2 (en) 2004-02-11 2007-09-04 Applied Materials, Inc. Cleaning of chamber components
US20050178653A1 (en) 2004-02-17 2005-08-18 Charles Fisher Method for elimination of sputtering into the backing plate of a target/backing plate assembly
US7049612B2 (en) 2004-03-02 2006-05-23 Applied Materials Electron beam treatment apparatus
US7504008B2 (en) 2004-03-12 2009-03-17 Applied Materials, Inc. Refurbishment of sputtering targets
US7018515B2 (en) 2004-03-24 2006-03-28 Applied Materials, Inc. Selectable dual position magnetron
US20050238807A1 (en) 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
US7618769B2 (en) 2004-06-07 2009-11-17 Applied Materials, Inc. Textured chamber surface
US20060005767A1 (en) 2004-06-28 2006-01-12 Applied Materials, Inc. Chamber component having knurled surface
US20060188742A1 (en) 2005-01-18 2006-08-24 Applied Materials, Inc. Chamber component having grooved surface
US20060021870A1 (en) 2004-07-27 2006-02-02 Applied Materials, Inc. Profile detection and refurbishment of deposition targets
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7736599B2 (en) 2004-11-12 2010-06-15 Applied Materials, Inc. Reactor design to reduce particle deposition during process abatement
EP1903123B1 (de) 2004-11-19 2012-02-22 Applied Materials GmbH & Co. KG Trägerplatte mit einer darauf aufgesetzten gekühlten Rückenplatte
US7579067B2 (en) 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
US20060182681A1 (en) * 2004-12-28 2006-08-17 Fortum Oyj Catalytic materials and method for the preparation thereof
US7644745B2 (en) 2005-06-06 2010-01-12 Applied Materials, Inc. Bonding of target tiles to backing plate with patterned bonding agent
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070113783A1 (en) 2005-11-19 2007-05-24 Applied Materials, Inc. Band shield for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20070215463A1 (en) 2006-03-14 2007-09-20 Applied Materials, Inc. Pre-conditioning a sputtering target prior to sputtering
US20070283884A1 (en) 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
SG177902A1 (en) 2006-12-19 2012-02-28 Applied Materials Inc Non-contact process kit
US8221602B2 (en) 2006-12-19 2012-07-17 Applied Materials, Inc. Non-contact process kit
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US20080257263A1 (en) 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
WO2009059640A1 (en) 2007-11-08 2009-05-14 Applied Materials Inc., A Corporation Of The State Of Delaware Electrode arrangement with movable shield

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EP1902003A2 (en) 2008-03-26
WO2007008999A3 (en) 2007-04-26
WO2007008999A2 (en) 2007-01-18
US8617672B2 (en) 2013-12-31
KR20080033181A (ko) 2008-04-16
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EP1902003B1 (en) 2018-04-25
TW200710998A (en) 2007-03-16
CN101218191A (zh) 2008-07-09
US9481608B2 (en) 2016-11-01
JP2009501452A (ja) 2009-01-15
US20070014949A1 (en) 2007-01-18
US20140167327A1 (en) 2014-06-19

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