AU1887000A - Microelectronic device for storing information and method thereof - Google Patents

Microelectronic device for storing information and method thereof

Info

Publication number
AU1887000A
AU1887000A AU18870/00A AU1887000A AU1887000A AU 1887000 A AU1887000 A AU 1887000A AU 18870/00 A AU18870/00 A AU 18870/00A AU 1887000 A AU1887000 A AU 1887000A AU 1887000 A AU1887000 A AU 1887000A
Authority
AU
Australia
Prior art keywords
storing information
microelectronic device
microelectronic
storing
information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU18870/00A
Other languages
English (en)
Inventor
Armin Beck
Johannes G. Bednorz
Christoph Gerber
Christophe P. Rossel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of AU1887000A publication Critical patent/AU1887000A/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
AU18870/00A 1999-02-17 2000-01-17 Microelectronic device for storing information and method thereof Abandoned AU1887000A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
WO900283 1999-02-17
IB9900283 1999-02-17
PCT/IB2000/000043 WO2000049659A1 (en) 1999-02-17 2000-01-17 Microelectronic device for storing information and method thereof

Publications (1)

Publication Number Publication Date
AU1887000A true AU1887000A (en) 2000-09-04

Family

ID=11004823

Family Applications (1)

Application Number Title Priority Date Filing Date
AU18870/00A Abandoned AU1887000A (en) 1999-02-17 2000-01-17 Microelectronic device for storing information and method thereof

Country Status (9)

Country Link
US (1) US6815744B1 (de)
EP (1) EP1153434A1 (de)
JP (1) JP4204755B2 (de)
KR (1) KR100427841B1 (de)
CN (1) CN1191635C (de)
AU (1) AU1887000A (de)
IL (2) IL143649A0 (de)
MY (1) MY133342A (de)
WO (1) WO2000049659A1 (de)

Families Citing this family (139)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280542A (ja) * 2001-03-21 2002-09-27 Shuichi Iida 電子群の位置移動を利用する記録素子、その製作方法、その動作方法およびそれを用いた記録装置
EP1434232B1 (de) 2001-08-13 2007-09-19 Advanced Micro Devices, Inc. Speicherzelle
US7211199B2 (en) 2002-03-15 2007-05-01 The Trustees Of The University Of Pennsylvania Magnetically-and electrically-induced variable resistance materials and method for preparing same
US7663132B2 (en) * 2002-04-04 2010-02-16 Kabushiki Kaisha Toshiba Resistance change memory device
US7767993B2 (en) * 2002-04-04 2010-08-03 Kabushiki Kaisha Toshiba Resistance change memory device
US7623370B2 (en) * 2002-04-04 2009-11-24 Kabushiki Kaisha Toshiba Resistance change memory device
JP4282314B2 (ja) 2002-06-25 2009-06-17 シャープ株式会社 記憶装置
JP4187148B2 (ja) 2002-12-03 2008-11-26 シャープ株式会社 半導体記憶装置のデータ書き込み制御方法
JP3701302B2 (ja) * 2003-01-30 2005-09-28 松下電器産業株式会社 熱スイッチ素子およびその製造方法
US7063984B2 (en) * 2003-03-13 2006-06-20 Unity Semiconductor Corporation Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
US7778062B2 (en) 2003-03-18 2010-08-17 Kabushiki Kaisha Toshiba Resistance change memory device
US7706167B2 (en) * 2003-03-18 2010-04-27 Kabushiki Kaisha Toshiba Resistance change memory device
US7755934B2 (en) * 2003-03-18 2010-07-13 Kabushiki Kaisha Toshiba Resistance change memory device
US7719875B2 (en) * 2003-03-18 2010-05-18 Kabushiki Kaisha Toshiba Resistance change memory device
US7394680B2 (en) * 2003-03-18 2008-07-01 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
US7400522B2 (en) * 2003-03-18 2008-07-15 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation
US7729158B2 (en) * 2003-04-03 2010-06-01 Kabushiki Kaisha Toshiba Resistance change memory device
US7459715B2 (en) * 2003-04-03 2008-12-02 Kabushiki Kaisha Toshiba Resistance change memory device
KR20060010785A (ko) * 2003-05-08 2006-02-02 마쯔시다덴기산교 가부시키가이샤 전기 스위치 및 그것을 사용한 기억 소자
US6927120B2 (en) * 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Method for forming an asymmetric crystalline structure memory cell
US6927074B2 (en) * 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Asymmetric memory cell
KR100773537B1 (ko) 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
JP2005123361A (ja) * 2003-10-16 2005-05-12 Sony Corp 抵抗変化型不揮発性メモリおよびその製造方法ならびに抵抗変化層の形成方法
US7130212B2 (en) 2003-11-26 2006-10-31 International Business Machines Corporation Field effect device with a channel with a switchable conductivity
US6990008B2 (en) 2003-11-26 2006-01-24 International Business Machines Corporation Switchable capacitance and nonvolatile memory device using the same
US8513634B2 (en) * 2003-12-17 2013-08-20 Samsung Electronics Co., Ltd. Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same
KR100552704B1 (ko) * 2003-12-17 2006-02-20 삼성전자주식회사 반도체 장치의 불휘발성 커패시터, 이를 포함하는 반도체메모리 소자 및 그 동작방법
TWI355661B (en) * 2003-12-18 2012-01-01 Panasonic Corp Method for using a variable-resistance material as
US7008833B2 (en) * 2004-01-12 2006-03-07 Sharp Laboratories Of America, Inc. In2O3thin film resistivity control by doping metal oxide insulator for MFMox device applications
JP4385778B2 (ja) * 2004-01-29 2009-12-16 ソニー株式会社 記憶装置
JP2005236003A (ja) * 2004-02-19 2005-09-02 Sony Corp 抵抗変化型不揮発性メモリ、抵抗変化型不揮発性メモリの製造方法、記録方法、再生方法、消去方法、抵抗変化材料微細構造体および抵抗変化材料微細構造体の製造方法
EP1587137A1 (de) * 2004-04-16 2005-10-19 International Business Machines Corporation Abscheidungsverfahren für einen nicht-flüchtigen Speicher mit umschaltendem Widerstand
JP4701427B2 (ja) * 2004-04-28 2011-06-15 パナソニック株式会社 スイッチング素子およびそれを用いたアレイ型機能素子
KR101051704B1 (ko) 2004-04-28 2011-07-25 삼성전자주식회사 저항 구배를 지닌 다층막을 이용한 메모리 소자
KR100932477B1 (ko) 2004-07-22 2009-12-17 니폰덴신뎅와 가부시키가이샤 쌍안정 저항값 취득장치 및 그 제조방법과 금속 산화물 박막 및 그 제조방법
KR100657897B1 (ko) * 2004-08-21 2006-12-14 삼성전자주식회사 전압 제어층을 포함하는 메모리 소자
JP5208349B2 (ja) * 2004-09-03 2013-06-12 富士通株式会社 容量素子とその製造方法
JP3919205B2 (ja) * 2004-09-09 2007-05-23 松下電器産業株式会社 抵抗変化素子とその製造方法
EP1643508B1 (de) 2004-10-01 2013-05-22 International Business Machines Corporation Nichtflüchtiges Speicherelement mit programmierbarem Widerstand
KR100738070B1 (ko) 2004-11-06 2007-07-12 삼성전자주식회사 한 개의 저항체와 한 개의 트랜지스터를 지닌 비휘발성메모리 소자
KR100593750B1 (ko) * 2004-11-10 2006-06-28 삼성전자주식회사 이성분계 금속 산화막을 데이터 저장 물질막으로 채택하는교차점 비휘발성 기억소자 및 그 제조방법
KR100682926B1 (ko) * 2005-01-31 2007-02-15 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 소자 및 그 제조방법
JP5049483B2 (ja) * 2005-04-22 2012-10-17 パナソニック株式会社 電気素子，メモリ装置，および半導体集積回路
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US20060256608A1 (en) * 2005-05-11 2006-11-16 Spansion Llc Resistive memory device with improved data retention and reduced power
US7376006B2 (en) 2005-05-13 2008-05-20 International Business Machines Corporation Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
US7256415B2 (en) 2005-05-31 2007-08-14 International Business Machines Corporation Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
JP4939414B2 (ja) * 2005-07-11 2012-05-23 シャープ株式会社 可変抵抗素子
JP2007027537A (ja) * 2005-07-20 2007-02-01 Sharp Corp 可変抵抗素子を備えた半導体記憶装置
JP3889023B2 (ja) 2005-08-05 2007-03-07 シャープ株式会社 可変抵抗素子とその製造方法並びにそれを備えた記憶装置
US7521705B2 (en) * 2005-08-15 2009-04-21 Micron Technology, Inc. Reproducible resistance variable insulating memory devices having a shaped bottom electrode
JP4854233B2 (ja) * 2005-08-15 2012-01-18 独立行政法人産業技術総合研究所 スイッチング素子
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
US7816659B2 (en) * 2005-11-23 2010-10-19 Sandisk 3D Llc Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
JP4061328B2 (ja) * 2005-12-02 2008-03-19 シャープ株式会社 可変抵抗素子及びその製造方法
JP4017650B2 (ja) 2005-12-02 2007-12-05 シャープ株式会社 可変抵抗素子及びその製造方法
KR100718142B1 (ko) * 2005-12-02 2007-05-14 삼성전자주식회사 금속층-절연층-금속층 구조의 스토리지 노드를 구비하는불휘발성 메모리 소자 및 그 동작 방법
US7733684B2 (en) * 2005-12-13 2010-06-08 Kabushiki Kaisha Toshiba Data read/write device
CN101552014B (zh) * 2005-12-13 2012-11-14 株式会社东芝 数据读/写装置
JP5049491B2 (ja) * 2005-12-22 2012-10-17 パナソニック株式会社 電気素子，メモリ装置，および半導体集積回路
JP2007180176A (ja) * 2005-12-27 2007-07-12 Fujitsu Ltd 抵抗変化型記憶素子
JP3989506B2 (ja) 2005-12-27 2007-10-10 シャープ株式会社 可変抵抗素子とその製造方法ならびにそれを備えた半導体記憶装置
US7579611B2 (en) * 2006-02-14 2009-08-25 International Business Machines Corporation Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7829875B2 (en) * 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7808810B2 (en) * 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US20070235811A1 (en) * 2006-04-07 2007-10-11 International Business Machines Corporation Simultaneous conditioning of a plurality of memory cells through series resistors
JP4699932B2 (ja) 2006-04-13 2011-06-15 パナソニック株式会社 抵抗変化素子とそれを用いた抵抗変化型メモリならびにその製造方法
JP4857014B2 (ja) 2006-04-19 2012-01-18 パナソニック株式会社 抵抗変化素子とそれを用いた抵抗変化型メモリ
US7324366B2 (en) * 2006-04-21 2008-01-29 International Business Machines Corporation Non-volatile memory architecture employing bipolar programmable resistance storage elements
US20080011996A1 (en) * 2006-07-11 2008-01-17 Johannes Georg Bednorz Multi-layer device with switchable resistance
US8058643B2 (en) 2006-09-29 2011-11-15 The Board Of Trustees Of The Leland Stanford Junior University Electrochemical memory with internal boundary
US7524722B2 (en) * 2006-10-12 2009-04-28 Macronix International Co., Ltd. Resistance type memory device and fabricating method and operating method thereof
US7724562B2 (en) 2006-11-02 2010-05-25 The Board Of Trustees Of The Leland Stanford Junior University Electrochemical memory with heater
WO2008059701A1 (ja) * 2006-11-17 2008-05-22 Panasonic Corporation 不揮発性記憶素子、不揮発性記憶装置、不揮発性半導体装置、および不揮発性記憶素子の製造方法
KR100982424B1 (ko) 2006-11-28 2010-09-15 삼성전자주식회사 저항 메모리 소자의 제조 방법
CN101207179B (zh) * 2006-12-19 2012-05-23 国际商业机器公司 存储器单元及其制造方法
CN100568532C (zh) * 2006-12-21 2009-12-09 国际商业机器公司 存储单元及其制造方法
US7704789B2 (en) * 2007-02-05 2010-04-27 Intermolecular, Inc. Methods for forming resistive switching memory elements
US7972897B2 (en) 2007-02-05 2011-07-05 Intermolecular, Inc. Methods for forming resistive switching memory elements
US7678607B2 (en) * 2007-02-05 2010-03-16 Intermolecular, Inc. Methods for forming resistive switching memory elements
US8097878B2 (en) * 2007-03-05 2012-01-17 Intermolecular, Inc. Nonvolatile memory elements with metal-deficient resistive-switching metal oxides
US7629198B2 (en) * 2007-03-05 2009-12-08 Intermolecular, Inc. Methods for forming nonvolatile memory elements with resistive-switching metal oxides
JP5012891B2 (ja) 2007-03-26 2012-08-29 株式会社村田製作所 抵抗記憶素子
US8058636B2 (en) 2007-03-29 2011-11-15 Panasonic Corporation Variable resistance nonvolatile memory apparatus
TW200839956A (en) * 2007-03-30 2008-10-01 Toshiba Kk Information recording/reproducing apparatus
JP4308884B2 (ja) * 2007-04-09 2009-08-05 パナソニック株式会社 抵抗変化型記憶装置、不揮発性スイッチング装置
US7863087B1 (en) 2007-05-09 2011-01-04 Intermolecular, Inc Methods for forming resistive-switching metal oxides for nonvolatile memory elements
JP5422552B2 (ja) * 2007-05-09 2014-02-19 インターモレキュラー， インコーポレイテッド 抵抗性スイッチング不揮発性メモリ要素
CN101542730B (zh) 2007-06-05 2011-04-06 松下电器产业株式会社 非易失性存储元件和其制造方法、以及使用了该非易失性存储元件的非易失性半导体装置
US7459716B2 (en) * 2007-06-11 2008-12-02 Kabushiki Kaisha Toshiba Resistance change memory device
US7692951B2 (en) * 2007-06-12 2010-04-06 Kabushiki Kaisha Toshiba Resistance change memory device with a variable resistance element formed of a first and a second composite compound
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7846785B2 (en) * 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7902537B2 (en) 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US8294219B2 (en) * 2007-07-25 2012-10-23 Intermolecular, Inc. Nonvolatile memory element including resistive switching metal oxide layers
JP5501966B2 (ja) 2007-07-25 2014-05-28 インターモレキュラー， インコーポレイテッド 多状態の不揮発性メモリ素子
JP5012312B2 (ja) 2007-08-15 2012-08-29 ソニー株式会社 記憶装置の駆動方法
JP5308105B2 (ja) * 2007-10-05 2013-10-09 シャープ株式会社 可変抵抗素子及びその製造方法
JP4545823B2 (ja) * 2007-10-15 2010-09-15 パナソニック株式会社 不揮発性記憶素子、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
US8063430B2 (en) 2007-10-18 2011-11-22 Samsung Electronics Co., Ltd. Semiconductor devices and methods of manufacturing and operating same
US8098517B2 (en) * 2007-10-31 2012-01-17 Ovonyx, Inc. Method of restoring variable resistance memory device
US8405124B2 (en) * 2008-01-09 2013-03-26 International Business Machines Corporation Logic element, and integrated circuit or field programmable gate array
US8470676B2 (en) * 2008-01-09 2013-06-25 International Business Machines Corporation Programmable element, and memory device or logic circuit
EP2245631B1 (de) 2008-01-16 2015-08-05 International Business Machines Corporation Speicherzelle und speichervorrichtung
US8125818B2 (en) 2008-02-25 2012-02-28 Panasonic Corporation Method of programming variable resistance element and variable resistance memory device using the same
JP2009224403A (ja) * 2008-03-13 2009-10-01 Toshiba Corp 情報記録素子及びそれを備えた情報記録再生装置
US8098520B2 (en) * 2008-04-25 2012-01-17 Seagate Technology Llc Storage device including a memory cell having multiple memory layers
CN101779287B (zh) * 2008-05-22 2011-12-21 松下电器产业株式会社 电阻变化型非易失性存储装置
US7615459B1 (en) 2008-08-12 2009-11-10 Sharp Kabushiki Kaisha Manufacturing method for variable resistive element
US7986267B2 (en) * 2008-10-13 2011-07-26 Broadcom Corporation Method and system for customized full ephemeris compatible with standard AGPS network devices
JP4653833B2 (ja) 2008-11-04 2011-03-16 シャープ株式会社 不揮発性半導体記憶装置及びその制御方法
KR101358548B1 (ko) 2008-11-26 2014-02-05 샤프 가부시키가이샤 불휘발성 반도체 기억 장치 및 그 구동 방법
JP4774109B2 (ja) 2009-03-13 2011-09-14 シャープ株式会社 不揮発性可変抵抗素子のフォーミング処理の制御回路、並びにフォーミング処理の制御方法
JP5659480B2 (ja) 2009-10-26 2015-01-28 ソニー株式会社 記憶装置の製造方法
US8570138B2 (en) * 2010-03-03 2013-10-29 Hewlett-Packard Development Company, L.P. Resistive switches
US8216862B2 (en) * 2010-03-16 2012-07-10 Sandisk 3D Llc Forming and training processes for resistance-change memory cell
JP5069339B2 (ja) 2010-06-10 2012-11-07 シャープ株式会社 不揮発性可変抵抗素子の抵抗制御方法
JP5156060B2 (ja) 2010-07-29 2013-03-06 シャープ株式会社 不揮発性半導体記憶装置
JP5204825B2 (ja) 2010-09-17 2013-06-05 シャープ株式会社 半導体記憶装置
JP5149358B2 (ja) 2010-09-24 2013-02-20 シャープ株式会社 半導体記憶装置
JP5091999B2 (ja) 2010-09-24 2012-12-05 シャープ株式会社 半導体記憶装置
US8502343B1 (en) 2010-11-17 2013-08-06 The University Of Toledo Nanoelectric memristor device with dilute magnetic semiconductors
CN102738388A (zh) * 2011-04-12 2012-10-17 中国科学院微电子研究所 具有忆阻器特性的半导体器件及其实现多级存储的方法
JP5204868B2 (ja) 2011-04-12 2013-06-05 シャープ株式会社 半導体記憶装置
JP5269151B2 (ja) 2011-06-09 2013-08-21 シャープ株式会社 半導体記憶装置
CN102931346A (zh) * 2011-08-12 2013-02-13 中国科学院微电子研究所 忆阻器器件及其制备方法
JP5642649B2 (ja) * 2011-10-07 2014-12-17 シャープ株式会社 半導体記憶装置及び半導体装置
JP5622715B2 (ja) * 2011-12-28 2014-11-12 株式会社東芝 半導体記憶装置
US9018068B2 (en) 2013-04-24 2015-04-28 Intermolecular, Inc. Nonvolatile resistive memory element with a silicon-based switching layer
CN108091913B (zh) 2016-11-23 2020-01-21 清华大学 固态燃料电池及固态电解质的制备方法
CN108091760B (zh) 2016-11-23 2019-11-22 清华大学 调控含氢过渡金属氧化物相变的方法
CN108091759B (zh) 2016-11-23 2019-07-09 清华大学 相变电子器件
CN108091870B (zh) 2016-11-23 2021-02-26 清华大学 含氢过渡金属氧化物、制备方法及原电池
US10312441B1 (en) * 2018-04-09 2019-06-04 International Business Machines Corporation Tunable resistive element
US10930844B2 (en) 2018-10-11 2021-02-23 International Business Machines Corporation Three-terminal oxygen intercalation neuromorphic devices
US20220393563A1 (en) * 2019-11-01 2022-12-08 Japan Science And Technology Agency Current sensor and power conversion circuit
US11844293B2 (en) * 2021-10-04 2023-12-12 International Business Machines Corporation Physical unclonable function device with phase change

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA831691A (en) * 1967-10-09 1970-01-06 Matsuoka Michio Non-linear resistors of bulk type
US3796926A (en) * 1971-03-29 1974-03-12 Ibm Bistable resistance device which does not require forming
US4472296A (en) * 1982-06-21 1984-09-18 Iowa State University Research Foundation, Inc. Bulk, polycrystalline switching materials for threshold and/or memory switching
DE3674451D1 (de) * 1985-04-29 1990-10-31 Bbc Brown Boveri & Cie Verfahren zur herstellung eines spannungsabhaengigen keramischen widerstandes auf der basis von zno.
DE3876228T2 (de) * 1988-01-15 1993-06-03 Ibm Feldeffektanordnung mit supraleitendem kanal.
DE69117503T2 (de) * 1991-07-19 1996-09-19 Ibm Verbesserter supraleitender Feldeffekt-Transistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung
JP2818068B2 (ja) * 1992-04-06 1998-10-30 シャープ株式会社 強誘電体を用いた書換え可能な不揮発性多値メモリ
US5955754A (en) * 1992-10-23 1999-09-21 Symetrix Corporation Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same
DE69404189T2 (de) * 1993-03-31 1998-01-08 Texas Instruments Inc Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante
JPH06350100A (ja) * 1993-06-02 1994-12-22 Ricoh Co Ltd 強誘電体材料および該材料をゲートとして用いたｍｆｓｆｅｔ
JP3460095B2 (ja) * 1994-06-01 2003-10-27 富士通株式会社 強誘電体メモリ
US5635741A (en) * 1994-09-30 1997-06-03 Texas Instruments Incorporated Barium strontium titanate (BST) thin films by erbium donor doping
JP3805001B2 (ja) * 1995-06-08 2006-08-02 株式会社ルネサステクノロジ 半導体装置
JPH09331020A (ja) * 1996-06-07 1997-12-22 Sharp Corp 誘電体薄膜キャパシタ素子及びその製造方法
JPH1036171A (ja) * 1996-07-19 1998-02-10 Sony Corp 強誘電体材料およびこれを用いた強誘電体メモリ
US6139780A (en) * 1998-05-28 2000-10-31 Sharp Kabushiki Kaisha Dynamic random access memories with dielectric compositions stable to reduction
US6128178A (en) * 1998-07-20 2000-10-03 International Business Machines Corporation Very thin film capacitor for dynamic random access memory (DRAM)
US6204139B1 (en) * 1998-08-25 2001-03-20 University Of Houston Method for switching the properties of perovskite materials used in thin film resistors
US7063984B2 (en) * 2003-03-13 2006-06-20 Unity Semiconductor Corporation Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
US7706167B2 (en) * 2003-03-18 2010-04-27 Kabushiki Kaisha Toshiba Resistance change memory device
US7008833B2 (en) * 2004-01-12 2006-03-07 Sharp Laboratories Of America, Inc. In2O3thin film resistivity control by doping metal oxide insulator for MFMox device applications
JP3919205B2 (ja) * 2004-09-09 2007-05-23 松下電器産業株式会社 抵抗変化素子とその製造方法
JP5049491B2 (ja) * 2005-12-22 2012-10-17 パナソニック株式会社 電気素子，メモリ装置，および半導体集積回路
US7579611B2 (en) * 2006-02-14 2009-08-25 International Business Machines Corporation Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide
US7808810B2 (en) * 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse

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